SGB02N120中文资料

TC=25°C, Transistor
Ptot
1,3
kW
VGES
+/- 20V
V
IF
200
A
IFRM
400
A
VR = 0V, t p = 10ms, T Vj = 125°C
2 I t
-
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, V GE = 15V, Tvj = 25°C IC = 200A, V GE = 15V, Tvj = 125°C IC = 8mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat
Elektrische Eigenschaften / Electrical properties

V20120SG, VF20120SG, VB20120SG & VI20120SGVishay General SemiconductorDocument Number: 88994For technical questions within your region, please contact one of the following:High-Voltage Trench MOS Barrier Schottky RectifierUltra Low V F = 0.54 V at I F = 5 AFEATURES •Trench MOS Schottky technology •Low forward voltage drop, low power losses •High efficiency operation•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) •Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB and TO-262AAEpoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As markedMounting Torque:10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV)20 A V RRM 120 V I FSM 150 A V F at I F = 20 A 0.78 V T J max.150 °C123NCA KMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETER YMBOL V20120G VF20120G VB20120S G VI20120SG UNITMaximum repetitive peak reverse voltage V RRM 120VMaximum average forward rectified current (Fig. 1)I F(AV) 20 APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 150 A Isolation voltage (ITO-220AB only)from terminal to heatsink t = 1 minV AC 1500V Operating junction and storage temperature rangeT J , T STG- 40 to + 150°CV20120SG, VF20120SG, VB20120SG & VI20120SGVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88994Notes:(1) Pulse test: 300 µs pulse width, 1 % duty cycle(2) Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETER TE S T CONDITION S SYMBOL TYP.MAX.UNITBreakdown voltageI R = 1.0 mA T A = 25 °C V BR120 (minimum)-VInstantaneous forward voltage (1)I F = 5 AI F = 10 A I F = 20 A T A = 25 °CV F0.620.811.20--1.33I F = 5 A I F = 10 A I F = 20 A T A = 125 °C 0.540.650.78--0.88Reverse current (2)V R = 90 VT A = 25 °CT A = 125 °C I R107--µA mA V R = 120 VT A = 25 °C T A = 125 °C-1225025µA mATHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETER S YMBOL V20120S G VF20120S G VB20120S GVI20120S GUNITTypical thermal resistanceR θJC2.24.22.22.2°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB V20120SG-E3/4W 1.884W 50/tube T ube ITO-220AB VF20120SG-E3/4W 1.754W 50/tube T ube TO-263AB VB20120SG-E3/4W 1.384W 50/tube T ube TO-263AB VB20120SG-E3/8W 1.388W 800/reel T ape and reelTO-262AAVI20120SG-E3/4W1.454W50/tubeT ubeFigure 1. Forward Current Derating Curve Figure 2. Forward Power Loss CharacteristicsV20120SG, VF20120SG, VB20120SG & VI20120SGVishay General SemiconductorDocument Number: 88994For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Characteristics Figure 5. Typical Junction CapacitanceFigure 6. Typical Transient Thermal ImpedanceFigure 7. Typical Transient Thermal ImpedanceV20120SG, VF20120SG, VB20120SG & VI20120SGVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88994PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

Fast S-IGBT in NPT-technologyGCE• 40% lower E off compared to previous generation• Short circuit withstand time – 10 µs• Designed for:- Motor controls- Inverter- SMPS• NPT-Technology offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capabilityType V CE I C E off T j Package Ordering Code SGP02N1201200V2A0.11mJ150°C TO-220AB Q67040-S4270 SGB02N120TO-263AB(D2PAK)Q67040-S4271 SGD02N120TO-252AA(DPAK)Q67040-S4269SGI02N120TO-262Q67040-S4291 Maximum RatingsParameter Symbol Value Unit Collector-emitter voltage V C E1200V DC collector currentT C = 25°CT C = 100°CI C6.22.8Pulsed collector current, t p limited by T jmax I C p u l s9.6Turn off safe operating areaV CE ≤ 1200V, T j≤ 150°C-9.6AGate-emitter voltage V G E±20V Avalanche energy, single pulseI C = 2A, V CC = 50V, R GE = 25Ω, start at T j = 25°CE A S10mJ Short circuit withstand time1)V GE = 15V, 100V ≤V CC ≤ 1200V, T j≤ 150°Ct S C10µsPower dissipationT C = 25°CP t o t62WOperating junction and storage temperature T j, T s t g-55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s-260°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.Thermal Resistance Parameter Symbol Conditions Max. ValueUnit CharacteristicIGBT thermal resistance,junction – case R t h J C 2.0Thermal resistance,junction – ambientR t h J A TO-220AB 62SMD version, device on PCB1)R t h J ATO-263AB(D2PAK)40K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specified ValueParameterSymbol Conditionsmin.typ.max.UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =100µA 1200--Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =2A T j =25°C T j =150°C2.5-3.13.7 3.64.3Gate-emitter threshold voltage V G E (t h )I C =100µA,V C E =V G E 345VZero gate voltage collector currentI C E SV C E =1200V,V G E =0V T j =25°C T j =150°C----25100µAGate-emitter leakage current I G E S V C E =1200V,V G E =0V --100nA Transconductance g f s V C E =20V, I C =2A 1.5-S Dynamic Characteristic Input capacitance C i s s -205250Output capacitanceC o s s -2834Reverse transfer capacitance C r s s V C E =25V,V G E =0V,f =1MHz-1721pFGate chargeQ G a t e V C C =960V, I C =2A V G E =15V -11-nC Internal emitter inductancemeasured 5mm (0.197 in.) from case L E TO-220AB-7-nH Short circuit collector current2)I C (S C )V G E =15V,t S C ≤10µs 100V ≤V C C ≤1200V,T j ≤ 150°C-24-A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2(one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air.2)Allowed number of short circuits: <1000; time between short circuits: >1s.Switching Characteristic, Inductive Load, at T j =25 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2330Rise timet r -1621Turn-off delay time t d (o f f )-260340Fall time t f -6180nsTurn-on energy E o n -0.160.21Turn-off energy E o f f -0.060.08Total switching energyE t sT j =25°C,V C C =800V,I C =2A,V G E =15V/0V,R G =91Ω,Energy losses include “tail” and diode reverse recovery.-0.220.29mJ Switching Characteristic, Inductive Load, at T j =150 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2631Rise timet r -1417Turn-off delay time t d (o f f )-290350Fall time t f -85102nsTurn-on energy E o n -0.270.33Turn-off energy E o f f -0.110.15Total switching energyE t sT j =150°C V C C =800V,I C =2A,V G E =15V/0V,R G =91ΩEnergy losses include “tail” and diode reverse recovery.-0.380.48mJI C , C O L L E C T O R C U R R E N T10Hz100Hz 1kHz 10kHz 100kHz 0A 2A4A6A8A10A12AI C , C O L L E C T O R C U R R E N T1V 10V 100V 1000V0.01A0.1A1A10Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency(T j ≤ 150°C, D = 0.5, V CE = 800V,V GE = +15V/0V, R G = 91Ω)Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C 0W 10W20W30W40W50W60WI C , C O L L E C T O R C U R R E N T25°C50°C 75°C 100°C 125°C0A1A 2A 3A 4A 5A 6A7AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature(V GE ≤ 15V, T j ≤ 150°C)I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V0A 1A 2A 3A 4A 5A 6A 7AI C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V 6V 7V0A 1A 2A 3A 4A 5A 6A 7AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristics (T j = 25°C)Figure 6. Typical output characteristics (T j = 150°C)I C , C O L L E C T O R C U R R E N T3V5V 7V 9V 11V0A 1A 2A 3A 4A 5A 6A 7AV C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E-50°C0°C 50°C 100°C 150°C0V1V2V3V4V5V6VV GE , GATE -EMITTER VOLTAGET j , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristics (V CE = 20V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A2A4A6A8A10ns100nst , S W I T C H I N G T I M E S0Ω50Ω100Ω150Ω10ns100nsI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as a function of collector current(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, R G = 91Ω)Figure 10. Typical switching times as a function of gate resistor(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, I C = 2A)t , S W I T C H I N G T I M E S-50°C0°C50°C100°C150°C10ns100nsV G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E-50°C0°C 50°C 100°C150°C0V1V2V3V4V5V6VT j , JUNCTION TEMPERATURET j , JUNCTION TEMPERATUREFigure 11. Typical switching times as a function of junction temperature(inductive load, V CE = 800V, V GE = +15V/0V,I C = 2A, R G = 91Ω)Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.3mA)E , S W I T C H I N G E N E R G Y L O S S E S0A2A4A6A8A0.0mJ0.5mJ1.0mJ1.5mJ2.0mJE ,S W I T C H I N G E N E R G Y L O S S E S0Ω50Ω100Ω150Ω0.0mJ0.1mJ0.2mJ0.3mJ0.4mJ0.5mJI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy losses as a function of collector current(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, R G = 91Ω)Figure 14. Typical switching energy losses as a function of gate resistor(inductive load, T j = 150°C, V CE = 800V,V GE = +15V/0V, I C = 2A)E, S W I T C H I N G E N E R G Y L O S S E S-50°C0°C 50°C 100°C 150°C0.0mJ0.1mJ0.2mJ0.3mJ0.4mJZ t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E1µs 10µs 100µs 1ms 10ms 100ms 1s10-2K/W10-1K/W100K/WT j , JUNCTION TEMPERATUREt p , PULSE WIDTHFigure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V,I C = 2A, R G = 91Ω)Figure 16. IGBT transient thermalimpedance as a function of pulse width (D = t p / T )V G E , G A T E -E M I T T E R V O L T A G E0nC5nC 10nC 15n0V 5V10V15V20VC , C A P A C I T A N C E0V10V 20V 30V10pF100pFQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 2A)Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)t s c , S H O R T C I R C U I T W I T H S T A N D T I M E10V 11V12V13V14V15V0µs 5µs10µs15µs 20µs25µs30µs I C (s c ), S H O R T C I R C U I T C O L L E C T O R C U R R E N T10V12V 14V 16V 18V 20V0A 10A20A30A40AV GE , GATE -EMITTER VOLTAGEV GE , GATE -EMITTER VOLTAGEFigure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 1200V, start at T j = 25°C)Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤V CE ≤1200V, T C = 25°C, T j ≤ 150°C)dimensionssymbol[mm][inch]minmax minmax A 9.7010.300.38190.4055B 14.8815.950.58580.6280C 0.650.860.02560.0339D 3.55 3.890.13980.1531E 2.60 3.000.10240.1181F 6.00 6.800.23620.2677G 13.0014.000.51180.5512H 4.35 4.750.17130.1870K 0.380.650.01500.0256L 0.951.320.03740.0520M 2.54 typ.0.1 typ.N 4.30 4.500.16930.1772P 1.17 1.400.04610.0551T2.302.720.09060.1071TO-220ABdimensionssymbol[mm][inch]minmax minmax A 9.8010.200.38580.4016B 0.70 1.300.02760.0512C 1.00 1.600.03940.0630D 1.03 1.070.04060.0421E 2.54 typ.0.1 typ.F 0.650.850.02560.0335G 5.08 typ.0.2 typ.H 4.30 4.500.16930.1772K 1.17 1.370.04610.0539L 9.059.450.35630.3720M 2.30 2.500.09060.0984N 15 typ.0.5906 typ.P 0.000.200.00000.0079Q 4.20 5.200.16540.2047R 8° max 8° maxS 2.40 3.000.09450.1181T 0.400.600.01570.0236U 10.800.4252V 1.150.0453W 6.230.2453X 4.600.1811Y 9.400.3701TO-263AB (D 2Pak)Z16.150.6358dimensionssymbol[mm][inch]min max min maxA 6.40 6.730.25200.2650B 5.25 5.500.20670.2165C(0.65)(1.15)(0.0256)(0.0453)D0.630.890.02480.0350E 2.280.2520F 2.19 2.390.08620.0941G0.760.980.02990.0386H0.90 1.210.03540.0476K 5.97 6.230.23500.2453L9.4010.400.37010.4094M0.460.580.01810.0228N0.87 1.150.03430.0453P0.51-0.0201-R 5.00-0.1969-S 4.17-0.1642-T0.26 1.020.01020.0402U----TO-252AA (DPak)Figure A. Definition of switching timesIr r m90% Ir r m10% Ir r mdi/dtFtr rIFi,vtQSQFtStFVRdi/dtr rQ=Q Qr r S F+t=t tr r S F+Figure C. Definition of diodesswitching characteristicsτ1τ2nτr r rFigure D. Thermal equivalentcircuitFigure B. Definition of switching lossesPublished byInfineon Technologies AG i Gr.,Bereich KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protecthuman life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.This datasheet has been download from: Datasheets for electronics components.。

-
0.5
0.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
180
AC Characteristics Transconductance VCE = 20 V, IC = 25 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz
Type BSM 25 GD 120 DN2 BSM 25 GD120DN2E3224
VCE IC 1200V 35A 1200V 35A
Package ECONOPACK 2 ECONOPACK 2K
Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature