2013年B2B占中国电子商务市场交易规模80%

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--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
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--
--
--
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--
1 10 100 -100
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
2.0 --
4.0
V
VGS = 10 V, ID = 6.5 A
-- 0.39 0.48
Ω
VDS = 40 V, ID = 6.5 A
(Note 4) --
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed

AO4924Asymmetric Dual N-Channel Enhancement Mode Field Effect TransistorAO4924SymbolMin TypMaxUnits BV DSS 30V V DS =24V, V GS =0V0.010.1T J =125°C510I GSS 0.1µA V GS(th)Gate Threshold Voltage 1.5 1.852.4V I D(ON)40A 1315.8T J =125°C20.025.015.719.5m Ωg FS 64S V SD 0.40.6V I S4.5A C iss 14501885pF C oss 224pF C rss92pF R g 1.6 3 ΩQ g (10V)24.031Q g (4.5V)12.0nC Q gs 3.9nC Q gd 4.2nC t D(on) 5.5ns t r 4.7ns t D(off)24.0ns t f 4.0ns t rr 1013ns Q rr6.8nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =9A, dI/dt=300A/µsDrain-Source Breakdown Voltage On state drain currentI D =1mA, V GS =0V V GS =4.5V, V DS =5V V GS =10V, I D =9AReverse Transfer CapacitanceI F =9A, dI/dt=300A/µs V DS =V GS I D =250µA FET1 Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions I DSS Zero Gate Voltage Drain Current mA V DS =0V, V GS = ±12V Gate-Body leakage current R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageMaximum Body-Diode + Schottky Continuous CurrentInput Capacitance Output Capacitance DYNAMIC PARAMETERS m ΩV GS =4.5V, I D =7AI S =1A,V GS =0V V DS =5V, I D =9ATurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.7Ω, R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Total Gate Charge V GS =10V, V DS =15V, I D =9AGate Drain Charge V GS =0V, V DS =15V, f=1MHzSWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance V GS =0V, V DS =0V, f=1MHz A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T (J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0:Sept. 2006AO4924AO4924AO4924AO4924SymbolMin TypMaxUnits BV DSS 30V 1T J =55°C5I GSS 100nA V GS(th)0.711.5V I D(ON)40A 2024T J =125°C283423.529m Ωg FS 26S V SD 0.711V I S4.5A C iss 9001100pF C oss 88pF C rss 65pF R g0.95 1.5ΩQ g 1012nC Q gs 1.8nC Q gd 3.75nC t D(on) 3.2ns t r 3.5ns t D(off)21.5ns t f 2.7ns t rr 16.820ns Q rr812nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =7.3A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =10V, I D =7.3AReverse Transfer Capacitance FET2 Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0VV DS =0V, V GS = ±12V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward Voltage I F =7.3A, dI/dt=100A/µsV GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =15V, I D =7.3AGate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =2Ω, R GEN =6ΩTurn-Off Fall TimeMaximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Gate resistanceV GS =0V, V DS =0V, f=1MHzm ΩV GS =4.5V, I D =6AI S =1A,V GS =0V V DS =5V, I D =7.3AA: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 0 : Sept. 2006AO4924AO4924。

General DescriptionMaxim’s redesigned DG408 and DG409 CMOS analog multiplexers now feature guaranteed matching between channels (8Ωmax) and flatness over the specified sig-nal range (9Ωmax). These low on-resistance muxes (100Ωmax) conduct equally well in either direction and feature guaranteed low charge injection (15pC max). In addition, these new muxes offer low input off-leakage current over temperature—less than 5nA at +85°C. The DG408 is a 1-of-8 multiplexer/demultiplexer and the DG409 is a dual 4-channel multiplexer/demultiplex-er. Both muxes operate with a +5V to +30V single sup-ply and with ±5V to ±20V dual supplies. ESD protection is guaranteed to be greater than 2000V per Method 3015.7 of MI L-STD-883. These improved muxes are pin-compatible plug-in upgrades for the industry stan-dard DG408 and DG409.________________________ApplicationsSample-and-Hold Circuits Test EquipmentGuidance and Control Systems Communications Systems Data-Acquisition Systems Audio Signal Routing____________________________Featureso Pin-Compatible Plug-In Upgrades for Industry Standard DG408/DG409o Guaranteed Matching Between Channels, 8ΩMax o Guaranteed On-Resistance Flatness, 9ΩMax o Guaranteed Low Charge Injection, 15pC Max o Low On-Resistance, 100ΩMax o Input Leakage, 5nA Max at +85°Co Low Power Consumption, 1.25mW Max o Rail-to-Rail Signal Handlingo Digital Input Controls TTL/CMOS Compatible o ESD Protection >2000V per Method 3015.7DG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers________________________________________________________________Maxim Integrated Products 1Ordering Information_________________Pin Configurations_______________Functional Diagrams19-4725; Rev 3; 8/02*Contact factory for dice specifications.**Contact factory for availability.For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .D G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS —Dual Supplies(V+ = 15V, V- = -15V, GND = 0V, V AH = +2.4V, V AL = +0.8V, T A = T MIN to T MAX , unless otherwise noted.)Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Voltage Referenced to V-V+............................................................................-0.3V, 44V GND.........................................................................-0.3V, 25V Digital Inputs, S, D (Note 1)....................(V- - 2V) to (V+ + 2V) or30mA, (whichever occurs first)Continuous Current (any terminal)......................................30mA Peak Current, S, D(pulsed at 1ms, 10% duty cycle max)..........................100mAContinuous Power Dissipation (T A = +70°C)TSSOP (derate 9.4mW/°C above +70°C)....................755mW Plastic DIP (derate 10.53mW/°C above +70°C)..........842mW TSSOP (derate 9.4mW/°C above +70°C)....................755mW Narrow SO (derate 8.70mW/°C above +70°C)............696mW CERDIP (derate 10.00mW/°C above +70°C)...............800mW Operating Temperature RangesDG408/DG409C_................................................0°C to +70°C DG408/DG409D,E_.........................................-40°C to +85°C DG408/DG409AK..........................................-55°C to +125°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10s).................................+300°CNote 1:Signals on S_, D_, EN, A0, A1, or A2 exceeding V+ or V- are clamped by internal diodes. Limit forward current tomaximum current ratings.DG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS —Dual Supplies (continued)(V+ = 15V, V- = -15V, GND = 0V, V AH = +2.4V, V AL = +0.8V, T A = T MIN to T MAX , unless otherwise noted.)D G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers 4_______________________________________________________________________________________ELECTRICAL CHARACTERISTICS —Single Supply(V+ = 12V, V- = 0V, GND = 0V, V AH = +2.4V, V AL = +0.8V, T A = T MIN to T MAX , unless otherwise noted.)Note 2:The algebraic convention where the most negative value is a minimum and the most positive value a maximum is used inthis data sheet.Note 3:Guaranteed by design.Note 4:∆R ON = R ON(MAX)- R ON(MIN).On-resistance match between channels and flatness are guaranteed only with specifiedvoltages. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured at the extremes of the specified analog signal range.Note 5:Leakage parameters are 100% tested at the maximum rated hot temperature and guaranteed by correlation at +25°C.Note 6:Off isolation = 20log V D /V S , where V D = output and V S = input to off switch.DG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers_______________________________________________________________________________________5120140160ON-RESISTANCE vs. V D (DUAL SUPPLIES)1000204060-2020-1515-1010-55080V D (V)r D S (O N ) (Ω)120ON-RESISTANCE vs. V D ANDTEMPERATURE (DUAL SUPPLIES)1000204060-1515-1010-55080V D (V)r D S (O N ) (Ω)280320360400ON-RESISTANCE vs. V D (SINGLE SUPPLY)24040801201601520105200V D (V)r D S (O N ) (Ω)120140160ON-RESISTANCE vs. V D AND TEMPERATURE (SINGLE SUPPLY)10002040601510580V D (V)r D S (O N ) (Ω)30CHARGE INJECTION vs. V D20-30-20-100-1515-1010-55010V D (V)Q j (p C )100.0001-55125OFF LEAKAGE vs. TEMPERATURE1TEMPERATURE (°C)O F F L E A K A G E (n A )250.010.001-35-15650.1100100045851055100.0001-55125ON LEAKAGE vs. TEMPERATURE1TEMPERATURE (°C)O N L E A K A G E (n A )250.010.001-35-15650.11001000458510551000.001-55125SUPPLY CURRENT vs. TEMPERATURE10TEMPERATURE (°C)I +, I - (µA )250.10.01-35-1565145851055__________________________________________Typical Operating Characteristics(T A = +25°C, unless otherwise noted.)__________Applications InformationOperation withSupply Voltages Other than 15VUsing supply voltages less than ±15V reduces the ana-log signal range. The DG408/DG409 switches operate with ±5V to ±20V bipolar supplies or with a +5V to +40V single supply. Connect V- to GND when operat-ing with a single supply. Both device types can also operate with unbalanced supplies, such as +24V and -5V. The Typica l Opera ting Cha ra cteristics graphs show typical on-resistance with 20V, 15V, 10V, and 5V supplies. (Switching times increase by a factor of two or more for operation at 5V.)Overvoltage ProtectionProper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maxi-mum ratings, because stresses beyond the listed rat-ings may cause permanent damage to the devices.Always sequence V+ on first, then V-, followed by the logic inputs, S or D. If power-supply sequencing is not possible, add two small signal diodes in series with supply pins for overvoltage protection (Figure 1).Adding diodes reduces the analog signal range to 1V below V+ and 1V above V-, but does not affect the devices’ low switch resistance and low leakage charac-teristics. Device operation is unchanged, and the differ-ence between V+ and V- should not exceed +44V.D G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers 6_____________________________________________________________________________________________________________________________________________________Pin DescriptionFigure 1. Overvoltage Protection Using External Blocking DiodesPINDG408DG409NAME FUNCTION1, 15, 16A0, A2, A1Address Inputs ——A0, A1Address Inputs 22EN Enable Input33V-Negative Supply Voltage Input 4–7—S1–S4Bidirectional Analog Inputs —4–7S1A–S4ABidirectional Analog Inputs 8—D Bidirectional Analog Output —8, 9DA, DB Bidirectional Analog Outputs 9–12—S8–S5Bidirectional Analog Inputs —10–13S4B–S1B Bidirectional Analog Inputs 1314V+Positive Supply Voltage Input 1415GNDGround1, 16DG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers_______________________________________________________________________________________7______________________________________________Test Circuits/Timing DiagramsFigure 2. Transition TimeD G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers 8________________________________________________________________________________________________________________________Test Circuits/Timing Diagrams (continued)Figure 5. Charge InjectionDG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers_______________________________________________________________________________________9_________________________________Test Circuits/Timing Diagrams (continued)Figure 6. Off-Isolation Figure 7. CrosstalkFigure 8. Source/Drain CapacitanceD G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers 10______________________________________________________________________________________Pin Configurations/Functional Diagrams/Truth Tables (continued)DG408/DG409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers______________________________________________________________________________________11Ordering Information (continued)**Contact factory for availability.Package InformationFor the latest package outline information, go to /packages .D G 408/D G 409Improved, 8-Channel/Dual 4-Channel,CMOS Analog Multiplexers __________________________________________________________Chip TopographiesS40.080"(2.03mm)D S8S7S4A 0.080"(2.03mm)DA DB S4BTRANSISTOR COUNT: 122SUBSTRATE CONNECTED TO V+TRANSISTOR COUNT: 122SUBSTRATE CONNECTED TO V+DG408DG409N.C. = NO INTERNAL CONNECTIONMa xim ca nnot a ssume responsibility for use of a ny circuitry other tha n circuitry entirely embodied in a Ma xim product. No circuit pa tent licenses a re implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.12____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600©2002 Maxim Integrated ProductsPrinted USAis a registered trademark of Maxim Integrated Products.。

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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityLow Power /lpw Telephony /telephonyWirelessVideo&Imaging /videoWireless /wirelessMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2007,Texas Instruments IncorporatedPACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)5962-9851501Q2A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type 5962-9851501QPA ACTIVE CDIP JG 81TBD A42SNPB N /A for Pkg Type 5962-9851503Q2A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type5962-9851503QCAACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type TL081ACD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081ACJG OBSOLETE CDIP JG 8TBD Call TI Call TITL081ACP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081ACPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081BCD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081BCP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081BCPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081CD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CDRG4ACTIVESOICD82500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM23-Apr-2007OrderableDeviceStatus (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)TL081CP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081CPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081CPSR ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CPSRE4ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081CPWLE OBSOLETE TSSOP PW 8TBD Call TI Call TITL081ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL081IP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081IPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL081MFKB OBSOLETE LCCC FK 20TBD Call TI Call TI TL081MJG OBSOLETE CDIP JG 8TBD Call TI Call TI TL081MJGB OBSOLETE CDIP JG 8TBD Call TI Call TITL082ACD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082ACPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082ACPSR ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ACPSRE4ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCDE4ACTIVESOICD875Green (RoHS &CU NIPDAULevel-1-260C-UNLIM23-Apr-2007OrderableDeviceStatus (1)Package Type Package DrawingPins Package QtyEco Plan (2)Lead/Ball FinishMSL Peak Temp (3)no Sb/Br)TL082BCDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082BCP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082BCPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082CD ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CDG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CJG OBSOLETE CDIP JG 8TBD Call TI Call TITL082CP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082CPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082CPSR ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPSRG4ACTIVE SO PS 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPW ACTIVE TSSOP PW 8150Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPWE4ACTIVE TSSOP PW 8150Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPWLE OBSOLETE TSSOP PW 8TBDCall TI Call TITL082CPWR ACTIVE TSSOP PW 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPWRE4ACTIVE TSSOP PW 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082CPWRG4ACTIVE TSSOP PW 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IDE4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IDG4ACTIVESOICD875Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM23-Apr-2007OrderableDeviceStatus (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)TL082IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IDRE4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IDRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IJG OBSOLETE CDIP JG 8TBD Call TI Call TITL082IP ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082IPE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL082IPWR ACTIVE TSSOP PW 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082IPWRE4ACTIVE TSSOP PW 82000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL082MFK OBSOLETE LCCC FK 20TBD Call TI Call TITL082MFKB ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg TypeTL082MJG ACTIVE CDIP JG 81TBD A42SNPB N /A for Pkg Type TL082MJGB ACTIVE CDIP JG 81TBD A42SNPB N /A for Pkg Type TL084ACD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACDE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACDG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACDRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL084ACNE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type TL084ACNSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084ACNSRE4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCDE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCDG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCDRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084BCDRG4ACTIVESOICD142500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM23-Apr-2007Orderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)TL084BCN ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeTL084BCNE4ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeTL084CD ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CDE4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CDG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CDR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CDRE4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CDRG4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084CJ OBSOLETE CDIP J14TBD Call TI Call TITL084CN ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeTL084CNE4ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeTL084CNSLE OBSOLETE SO NS14TBD Call TI Call TITL084CNSR ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CNSRG4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CPW ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CPWE4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084CPWLE OBSOLETE TSSOP PW14TBD Call TI Call TITL084CPWR ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084CPWRE4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084ID ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084IDE4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084IDG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084IDR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084IDRE4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMTL084IDRG4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM TL084IJ OBSOLETE CDIP J14TBD Call TI Call TITL084IN ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeTL084INE4ACTIVE PDIP N1425Pb-Free CU NIPDAU N/A for Pkg Type 23-Apr-2007Orderable DeviceStatus (1)Package Type Package Drawing Pins Package QtyEco Plan (2)Lead/Ball FinishMSL Peak Temp (3)(RoHS)TL084MFK ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type TL084MFKB ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type TL084MJ ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type TL084MJB ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type TL084QD ACTIVE SOIC D 1450TBD CU NIPDAU Level-1-220C-UNLIM TL084QDRACTIVESOICD142500TBDCU NIPDAULevel-1-220C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight inhomogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.23-Apr-2007TAPE AND REELINFORMATION3-May-2007DevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant TL081ACDR D 8FMX 33012 6.4 5.2 2.1812Q1TL081BCDR D 8FMX 33012 6.4 5.2 2.1812Q1TL081CDR D 8FMX 33012 6.4 5.2 2.1812Q1TL081CPSR PS 8MLA 330168.2 6.6 2.51216Q1TL081IDR D 8FMX 33012 6.4 5.2 2.1812Q1TL082ACDR D 8FMX 33012 6.4 5.2 2.1812Q1TL082ACDR D 8MLA 33012 6.4 5.2 2.1812Q1TL082ACPSR PS 8MLA 330168.2 6.6 2.51216Q1TL082BCDR D 8FMX 33012 6.4 5.2 2.1812Q1TL082CDR D 8FMX 33012 6.4 5.2 2.1812Q1TL082CDR D 8MLA 33012 6.4 5.2 2.1812Q1TL082CPSR PS 8MLA 330168.2 6.6 2.51216Q1TL082CPWR PW 8MLA 330127.0 3.6 1.6812Q1TL082IDR D 8FMX 33012 6.4 5.2 2.1812Q1TL082IDR D 8MLA 33012 6.4 5.2 2.1812Q1TL082IPWR PW 8MLA 330127.0 3.6 1.6812Q1TL084ACDR D 14MLA 33016 6.59.0 2.1816Q1TL084ACDR D 14FMX 3300 6.59.0 2.1816Q1TL084ACNSR NS 14MLA 330168.210.5 2.51216Q1TL084BCDR D 14FMX 3300 6.59.0 2.1816Q1TL084CDR D 14FMX 3300 6.59.0 2.1816Q1TL084CNSR NS 14MLA 330168.210.5 2.51216Q1TL084CPWR PW 14MLA 330127.0 5.6 1.6812Q1TL084IDRD14FMX3306.59.02.1816Q13-May-2007TAPE AND REEL BOX INFORMATIONDevicePackagePins Site Length (mm)Width (mm)Height (mm)TL081ACDR D 8FMX 338.1340.520.64TL081BCDR D 8FMX 338.1340.520.64TL081CDR D 8FMX 338.1340.520.64TL081CPSR PS 8MLA 333.2333.228.58TL081IDR D 8FMX 338.1340.520.64TL082ACDR D 8FMX 338.1340.520.64TL082ACDR D 8MLA 338.1340.520.64TL082ACPSR PS 8MLA 333.2333.228.58TL082BCDR D 8FMX 338.1340.520.64TL082CDR D 8FMX 338.1340.520.64TL082CDR D 8MLA 338.1340.520.64TL082CPSR PS 8MLA 333.2333.228.58TL082CPWR PW 8MLA 338.1340.520.64TL082IDR D 8FMX 338.1340.520.64TL082IDR D 8MLA 338.1340.520.64TL082IPWR PW 8MLA 338.1340.520.64TL084ACDR D 14MLA 333.2333.228.58TL084ACDR D 14FMX 333.2333.228.58TL084ACNSR NS 14MLA 333.2333.228.58TL084BCDR D 14FMX 333.2333.228.58TL084CDR D 14FMX 333.2333.228.58TL084CNSR NS 14MLA 333.2333.228.58TL084CPWR PW 14MLA 338.1340.520.64TL084IDRD14FMX333.2333.228.583-May-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. 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