当前位置：文档之家 › AO6407资料

AO6407资料

  • 格式：pdf
  • 大小：235.23 KB
  • 文档页数：6

SymbolVDSVGS

IDM

TJ, TSTG

SymbolTypMax47.562.574110RθJL3750W

Maximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At ≤ 10sRθJA°C/WMaximum Junction-to-Ambient ASteady-State°C/W±8Gate-Source VoltageDrain-Source Voltage-20

Continuous Drain Current AMaximumUnitsParameter

TA=25°CTA=70°CAbsolute Maximum Ratings TA=25°C unless otherwise noted

VV

-4.5-30Pulsed Drain Current B

Power Dissipation ATA=25°C

Junction and Storage Temperature RangeA

PD°C21.44-55 to 150TA=70°CID-5.5AO6407P-Channel Enhancement Mode Field Effect TransistorJanuary 2003

Features

VDS (V) = -20VID = -5 ARDS(ON) < 45mΩ (VGS = -4.5V)RDS(ON) < 60mΩ (VGS = -2.5V)RDS(ON) < 85mΩ (VGS = -1.8V)General Description

The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

G D

S TSOP6Top View

GDDSDD123654

Alpha & Omega Semiconductor, Ltd.元器件交易网www.cecb2b.comAO6407Symbol

MinTypMaxUnits

BVDSS-20V-1TJ=55°C-5IGSS±100nAVGS(th)-0.3-0.55-1VID(ON)-25A3445TJ=125°C48604660mΩ6185mΩgFS714SVSD-0.78-1VIS-2.2A

Ciss1180pFCoss176pFCrss142pFRg15Ω

Qg13nCQgs1.2nCQgd3.6nCtD(on)13.2nstr21nstD(off)93nstf46nstrr43nsQrr21nCBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-5A, dI/dt=100A/µsDrain-Source Breakdown Voltage

On state drain currentID=-250µA, VGS=0V

VGS=-1.8V, ID=-2A VGS=-4.5V, VDS=-5VVGS=-4.5V, ID=-5A

Reverse Transfer CapacitanceElectrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERSParameterConditions

IDSSµA

Gate Threshold VoltageVDS=VGS ID=-250µAVDS=-16V, VGS=0V

VDS=0V, VGS=±8VZero Gate Voltage Drain CurrentGate-Body leakage current

RDS(ON)Static Drain-Source On-Resistance

Forward TransconductanceDiode Forward VoltagemΩVGS=-2.5V, ID=-4A

IS=-1A,VGS=0VVDS=-5V, ID=-5A

IF=-5A, dI/dt=100A/µsVGS=0V, VDS=-10V, f=1MHz

SWITCHING PARAMETERSTotal Gate ChargeVGS=-4.5V, VDS=-10V, ID=-5AGate Source ChargeGate Drain Charge

Turn-On Rise TimeTurn-Off DelayTimeVGS=-4.5V, VDS=-10V, RL=2.0Ω, RGEN=3ΩGate resistanceVGS=0V, VDS=0V, f=1MHz

Turn-Off Fall TimeMaximum Body-Diode Continuous Current

Input CapacitanceOutput Capacitance

Turn-On DelayTimeDYNAMIC PARAMETERS

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.元器件交易网www.cecb2b.comAO6407TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0510

152025

012345-VDS (Volts)Fig 1: On-Region Characteristics-ID (A)

VGS=-1.5V-2.0V-2.5V-4.5V-8V

-3.0V

0246810

00.511.52-VGS(Volts)Figure 2: Transfer Characteristics-ID(A)

20406080

0246810-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate VoltageRDS(ON) (mΩ)

1.0E-061.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+01

0.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode Characteristics-IS (A)25°C125°C0.811.21.41.6

0255075100125150175Temperature (°C)Figure 4: On-Resistance vs. Junction TemperatureNormalized On-Resistance

ID=-4A, VGS=-2.5VID=-3A, VGS=-1.8VID=-5A, VGS=-4.5V

2030405060708090100

02468-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageRDS(ON) (mΩ)25°C125°CVDS=-5V

VGS=-1.8V

VGS=-2.5V

VGS=-4.5V

ID=-5A

25°C125°C

Alpha & Omega Semiconductor, Ltd.元器件交易网www.cecb2b.comAO6407TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

012345

03691215-Qg (nC)Figure 7: Gate-Charge Characteristics-VGS (Volts)

0400800120016002000

05101520-VDS (Volts)Figure 8: Capacitance CharacteristicsCapacitance (pF)Ciss

010203040

0.0010.010.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)Power (W)

0.010.1110

0.000010.00010.0010.010.11101001000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceZθJA Normalized Transient

Thermal ResistanceCoss

Crss

0.11.010.0100.0

0.1110100-VDS (Volts)-ID (Amps)

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)100µs

10ms1ms0.1s1s10sDCRDS(ON) limitedTJ(Max)=150°CTA=25°CVDS=-10VID=-5A

Single PulseD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=62.5°C/W

TonTPDIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulseTJ(Max)=150°CTA=25°C10µs

Alpha & Omega Semiconductor, Ltd.元器件交易网www.cecb2b.com

合集下载

AO8801中文资料

AO8801中文资料

SymbolVDSVGSIDMTJ, TSTGSymbolTypMax739096125R

θ

JL6375WMaximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At ≤ 10sRθJA°C/WMaximum Junction-to-Ambient ASteady-State°C/W±8Gate-Source VoltageDrain-Source Voltage-20Continuous Drain Current AMaximumUnitsParameterTA=25°CTA=70°CAbsolute Maximum Ratings TA=25°C unless otherwise notedVV-3.7-30Pulsed Drain Current BPower Dissipation ATA=25°CJunction and Storage Temperature RangeAPD°C1.40.9-55 to 150TA=70°CID-4.7AO8801Dual P-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -20VID = -4.7 A (VGS = -4.5V)RDS(ON) < 42mΩ (VGS = -4.5V)RDS(ON) < 53mΩ (VGS = -2.5V)RDS(ON) < 70mΩ (VGS = -1.8V)ESD Rating: 3000V HBMGeneral DescriptionThe AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pb-free (meets ROHS & Sony 259 specifications). AO8801L is a Green Product ordering option. AO8801 and AO8801L are electrically identical.DS1 G1 D2 S2 G2 G1S1S1D1G2S2S212348765TSSOP-8Top ViewD2

AO4485中文资料

AO4485中文资料

Symbol10 SecSteady StateVDSVGS-12-10-9-8IDMIAREAR3.11.72.01.1TJ, TSTGParameterSymbolTypMaxt ≤ 10s3140Steady State5975Steady StateRθJL1624W±20

°C/WRθJA°C-55 to 150Absolute Maximum Ratings TJ=25°C unless otherwise noted

PD

Maximum Junction-to-Lead C°C/WThermal CharacteristicsUnitsMaximum Junction-to-Ambient A°C/WMaximum Junction-to-Ambient AUnitsParameter

TA=25°C TA=70°CVVIDGate-Source VoltageDrain-Source Voltage-40

Power Dissipation A TA=25°CJunction and Storage Temperature RangeTA=70°CRepetitive avalanche energy L=0.3mH GmJ-120A-28118Pulsed Drain Current BAvalanche Current GContinuous Drain Current A AO4485P-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -40VID = -10A (VGS = -10V)RDS(ON) < 15mΩ (VGS = -10V)RDS(ON) < 20mΩ (VGS = -4.5V)General DescriptionThe AO4485/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4485 and AO4485L are electrically identical.-RoHS Compliant-AO4485L is Halogen Free

AO3421中文资料

AO3421中文资料

Symbol

V

DSVGSIDMTJ, TSTGSymbolTypMax7090100125RθJL6380W

Maximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At ≤ 10sRθJA°C/WMaximum Junction-to-Ambient ASteady-State°C/W±20Gate-Source VoltageDrain-Source Voltage-30Continuous Drain Current AMaximumUnitsParameter

TA=25°CTA=70°CAbsolute Maximum Ratings TA=25°C unless otherwise notedVV-2.2-20Pulsed Drain Current BPower Dissipation ATA=25°CJunction and Storage Temperature RangeAPD°C1.41-55 to 150TA=70°CID-2.6AO3421P-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON) < 130mΩ (VGS = -10V)RDS(ON) < 200mΩ (VGS = -4.5V)General DescriptionThe AO3421 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3421 is Pb-free (meets ROHS & Sony 259 specifications). AO3421L is a Green Product ordering option. AO3421 and AO3421L are electrically identical.

AO4805中文资料

AO4805中文资料

SymbolVDSVGS

IDM

TJ, TSTG

SymbolTypMax5062.573110RθJL3140W

Maximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At ≤ 10sRθJA°C/WMaximum Junction-to-Ambient ASteady-State°C/W±25Gate-Source VoltageDrain-Source Voltage-30

Continuous Drain Current AMaximumUnitsParameter

TA=25°CTA=70°CAbsolute Maximum Ratings TA=25°C unless otherwise notedVV

-6.9-40Pulsed Drain Current B

Power Dissipation ATA=25°C

Junction and Storage Temperature RangeA

PD°C21.44-55 to 150TA=70°CID-8AO4805Dual P-Channel Enhancement Mode Field Effect TransistorJune 2002

FeaturesVDS (V) = -30VID = -8ARDS(ON) < 18mΩ (VGS = -20V)RDS(ON) < 19mΩ (VGS = -10V)General DescriptionThe AO4805 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.