ABA-32563-BLKG中文资料

Agilent ABA-325632.5 GHz Broadband Silicon RFIC AmplifierData SheetDescriptionAgilent’s ABA-32563 is an economical, easy-to-use, inter-nally 50Ω matched, silicon monolithic broadband amplifier that offers excellent gain and broadband response from DC to 2.5 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.At 2GHz, the ABA-32563 offers a small-signal gain of 19dB, output P1dB of 8.4 dBm and 19.5 dBm output third order intercept point. It is suitable for use as wideband applications. They are designed for low cost gain blocks in cellular applica-tions, DBS tuners, LNB and other wireless communication systems. ABA-32563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a double-diffused single polysilicon process with self-aligned submi-cron emitter geometry. The process is capable of simulta-neous high f T and high NPN breakdown (25GHz f T at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability.Features•Operating Frequency DC ~ 2.5 GHz•19 dB Gain•VSWR < 2.0 throughout operatingfrequency•8.4 dBm Output P1dB•19.5 dBm Output IP3• 3.5 dB Noise Figure•Unconditionally Stable•Single 3V Supply (Id = 37 mA)•Lead-freeApplications•Amplifier for Cellular, Cordless,Special Mobile Radio, PCS, ISM,Wireless LAN, DBS, TVRO, and TVTuner ApplicationsSurface Mount PackageSOT-363/SC70Pin Connections andPackage MarkingSimplified SchematicNote:Top View. Package marking provides orientationand identification. “x” is the date code.VccGND 3InputGND 2GND 1Output& VccAttention:Observe precautions forhandling electrostaticsensitive devices.ESD Machine Model (Class A)ESD Human Body Model (Class 1B)Refer to Agilent Application Note A004R:Electrostatic Discharge Damage and Control.ABA-32563 Absolute Maximum Ratings [1]SymbolParameterUnitsAbsolute Max.V cc Device Voltage, RF output to ground (T = 25°C)V 6P in CW RF Input Power (Vcc = 3V)dBm 15P diss Total Power Dissipation [3]W 0.6T j Junction Temperature °C 150T STGStorage Temperature°C-65 to 150Notes:1.Operation of this device in excess of any of these limits may cause permanent damage.2.Thermal resistance measured using 150°C Liquid Crystal Measurement Technique.3.Board (package belly) temperature, Tc, is 25°C. Derate 8.1 mW/°C for Tc > 120.8°C.Electrical SpecificationsT c = +25°C, Z o = 50 Ω, P in = -30 dBm, V cc = 3V, Freq = 2 GHz, unless stated otherwise.SymbolParameter and Test ConditionUnitsMin.Typ.Max.Std Dev.Gp [1]Power Gain (|S 21|2)dB 17.519.0∆Gp Power Gain Flatness, f = 0.1 ~ 1.5 GHzdB 1.0 f = 0.1 ~ 2.5 GHz 3.0NF [1]Noise FiguredB 3.5 4.4P1dB [1]Output Power at 1dB Gain Compression dBm 8.4OIP3[1]Output Third Order Intercept Point dBm19.5VSWR in [1]Input VSWR <1.5VSWR out [1]Output VSWR <1.5Icc [1]Device Current mA 3742.5Td [1]Group Delayps140Notes:1.Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standarddeviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits.Figure 1. ABA-32563 Production Test Circuit.Thermal Resistance [2] (Vcc = 3V)θj-c = 124.3°C/WRF OutpF InputVccC blockABA-32563 Typical PerformanceT c = +25°C, Z o = 50Ω, V cc = 3V unless stated otherwise.FREQUENCY (GHz)Figure 2. Gain vs. Frequency and Voltage.G A I N (d B )12410.52 2.531.5 3.5FREQUENCY (GHz)Figure 3. Gain vs. Frequency and Temperature.G A I N (d B )12410.52 2.531.5 3.5FREQUENCY (GHz)Figure 4. Noise Figure vs. Frequency and Voltage.N F (d B )032410.52 2.531.5 3.5FREQUENCY (GHz)Figure 5. Noise Figure vs. Frequency and Temperature.N F (d B )32410.52 2.531.5 3.5FREQUENCY (GHz)Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Voltage. P 1d B(d B m )03410.52 2.531.5 3.5FREQUENCY (GHz)Figure 7. Output Power for 1 dB GainCompression vs. Frequency and Temperature.P 1d B (d B m )30.5ABA-32563 Typical Performance, continuedT c = +25°C, Z o = 50Ω, V cc = 3V unless stated otherwise.FREQUENCY (GHz)Figure 8. Output IP3 vs. Frequency and Voltage.O I P 3 (d B m )12410.52 2.531.5 3.5FREQUENCY (GHz)Figure 9. Output IP3 vs. Frequency and Temperature.O I P 3 (d B m )12410.52 2.531.5 3.5FREQUENCY (GHz)Figure 10. Input and Output VSWR vs. Frequency. V S W R1.81.61.41.21.00.5VOLTAGE (V)Figure 11. Supply Current vs. Voltage and Temperature.I c c (m A )002145637ABA-32563 Typical Scattering ParametersT C = +25°C, Z O = 50Ω, V CC = 3V, unless stated otherwiseFreq S11S11S21S21S21S12S12S22S22K (GHz)Mag.Ang. dB Mag.Ang.Mag.Ang.Mag.Ang.Factor 0.100.12171.520.010.00-5.60.02 2.60.28-6.5 2.70 0.200.11167.220.010.04-11.00.02 6.00.27-12.9 2.70 0.300.11162.720.110.07-16.70.029.50.27-18.8 2.70 0.400.10158.020.110.09-22.50.0212.80.27-24.8 2.70 0.500.10139.920.010.02-28.80.0215.70.26-27.6 2.60 0.600.10129.420.09.95-34.70.0218.60.26-31.7 2.60 0.700.10121.219.99.88-40.60.0221.20.25-35.9 2.50 0.800.09111.619.89.79-46.40.0223.50.25-40.4 2.400.900.09102.019.79.69-52.20.0225.50.25-45.0 2.401.000.0993.319.69.58-58.10.0226.90.24-49.82.30 1.100.0884.119.59.48-63.70.0228.60.24-54.5 2.30 1.200.0875.419.49.35-69.50.0229.60.23-59.4 2.20 1.300.0866.519.39.24-75.20.0330.20.22-64.5 2.10 1.400.0855.219.29.12-80.80.0330.90.22-69.8 2.10 1.500.0845.219.18.99-86.50.0331.40.21-75.2 2.10 1.600.0734.119.08.86-92.30.0331.80.20-80.7 2.00 1.700.0824.418.88.71-98.10.0331.90.18-86.4 2.00 1.800.0810.618.68.54-103.60.0331.70.17-92.0 2.001.900.08-2.218.58.41-109.30.0331.90.16-98.5 2.002.000.08-12.518.48.27-115.00.0331.90.15-105.6 2.00 2.200.08-34.617.97.87-126.40.0331.80.12-120.6 2.00 2.400.09-57.617.57.51-137.50.0431.90.10-139.2 2.00 2.600.10-77.317.07.08-148.80.0432.30.08-163.9 2.002.800.12-93.316.4 6.64-159.30.0432.40.07167.4 2.103.000.13-108.315.9 6.21-169.60.0432.40.07137.7 2.10 3.200.15-124.915.3 5.81-179.70.0432.10.08115.7 2.10 3.400.16-137.714.6 5.39170.60.0532.20.0998.7 2.10 3.600.19-150.114.0 5.04161.40.0531.50.1086.3 2.103.800.20-162.913.54.71152.10.0531.00.1278.9 2.104.000.22-175.012.8 4.38142.90.0530.50.1371.9 2.10 4.200.23175.012.1 4.04134.40.0630.00.1465.2 2.10 4.400.26166.111.6 3.79126.20.0628.20.1559.1 2.10 4.600.27155.311.0 3.54117.30.0626.70.1555.0 2.104.800.28145.810.2 3.25108.70.0725.20.1650.2 2.105.000.29138.39.5 2.99101.30.0723.20.1645.0 2.20 5.200.30131.78.8 2.7794.20.0820.80.1640.1 2.20 5.400.31126.28.2 2.5787.60.0818.40.1635.1 2.20 5.600.32120.97.7 2.4281.00.0915.60.1630.3 2.205.800.34115.67.2 2.2874.30.0912.70.1625.3 2.206.000.35110.4 6.6 2.1467.70.099.60.1523.8 2.20Device ModelsRefer to Agilent’s web site/view/rfOrdering InformationPart Number Devices per Container ContainerABA-32563-TR1G30007" reelABA-32563-TR2G1000013" reelABA-32563-BLKG100antistatic bagNote: Only lead-free option available.Package DimensionsOutline 63 (SOT-363/SC-70)Recommended PCB Pad Layout forAgilent's SC70 6L/SOT-363 Products DIMENSIONS (mm)MIN.1.15 1.80 1.80 0.80 0.80 0.00 0.100.15 0.10 0.10MAX.1.352.25 2.40 1.10 1.00 0.10 0.400.30 0.20 0.30SYMBOLEDHEA A2 A1 Q1 e b c LNOTES:1. All dimensions are in mm.2. Dimensions are inclusive of plating.3. Dimensions are exclusive of mold flash & metal burr.4. All specifications comply to EIAJ SC70.5. Die is facing up for mold and facing down for trim/form,ie: reverse trim/form.6. Package surface to be mirror finish.0.650 BCSDimensions in inches.Device OrientationTape Dimensions and Product Orientation for Outline 63USER FEEDEND VIEWTOP VIEW (Package marking example orientation shown.)(COVER TAPE THICKNESS)DESCRIPTIONSYMBOL SIZE (mm)SIZE (INCHES)LENGTH WIDTH DEPTH PITCHBOTTOM HOLE DIAMETER A 0B 0K 0P D 1 2.40 ± 0.102.40 ± 0.101.20 ± 0.104.00 ± 0.101.00 + 0.250.094 ± 0.0040.094 ± 0.0040.047 ± 0.0040.157 ± 0.0040.039 + 0.010CAVITYDIAMETER PITCH POSITION D P 0E 1.50 ± 0.104.00 ± 0.101.75 ± 0.100.061 + 0.0020.157 ± 0.0040.069 ± 0.004PERFORATIONWIDTHTHICKNESS W t 18.00 + 0.30 - 0.100.254 ± 0.020.315 + 0.0120.0100 ± 0.0008CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION)CAVITY TO PERFORATION (LENGTH DIRECTION)F P 23.50 ± 0.052.00 ± 0.050.138 ± 0.0020.079 ± 0.002DISTANCEWIDTHTAPE THICKNESSC T t 5.40 ± 0.100.062 ± 0.0010.205 + 0.0040.0025 ± 0.0004COVER TAPE/semiconductors For product information and a complete list of distributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or(916) 788-6763Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (65) 6756 2394India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only)Korea: (65) 6755 1989Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044Taiwan: (65) 6755 1843Data subject to change.Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5989-0756ENDecember 4, 2004。