RF Power LDMOS TransistorN--Channel Enhancement--Mode Lateral MOSFETThis 80watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720to 960MHz.•Typical Single--Carrier W--CDMA Performance:V DD =28Volts,I DQ =1400mA,P out =80Watts Avg.,Input Signal PAR =7.5dB @0.01%Probability on CCDF.Frequency G ps (dB)ηD (%)Output PAR(dB)ACPR (dBc)IRL (dB)920MHz 20.035.9 6.3--38.0--14940MHz 20.136.2 6.2--37.6--18960MHz20.036.16.1--37.5--17Features•Greater Negative Gate--Source Voltage Range for Improved Class C Operation•Designed for Digital Predistortion Error Correction Systems •Optimized for Doherty Applications•In Tape and Reel.R3Suffix =250Units,32mm Tape Width,13inch Reel.Document Number:AFT09S282NRev.0,10/2012Technical Data720--960MHz,80W AVG.,28VAFT09S282NR3AFT09S282NR3Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS --0.5,+70Vdc Gate--Source Voltage V GS --6.0,+10Vdc Operating VoltageV DD 32,+0Vdc Storage Temperature Range T stg --65to +150°C Case Operating Temperature Range T C --40to +150°C Operating Junction Temperature Range (1,2)T J--40to +225°CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCase Temperature 80°C,80W CW,28Vdc,I DQ =1500mA,960MHz Case Temperature 91°C,282W CW,28Vdc,I DQ =1500mA,960MHzR θJC0.310.27°C/WTable 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22--A114)2Machine Model (per EIA/JESD22--A115)B Charge Device Model (per JESD22--C101)IVTable 4.Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD22--A113,IPC/JEDEC J--STD--0203260°CTable 5.Electrical Characteristics (T A =25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS =70Vdc,V GS =0Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc)I DSS ——1μAdc Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =370μAdc)V GS(th) 1.0 1.5 2.0Vdc Gate Quiescent Voltage(V DD =28Vdc,I D =1400mA,Measured in Functional Test)V GS(Q) 1.7 2.2 2.7Vdc Drain--Source On--Voltage(V GS =10Vdc,I D =3.6Adc)V DS(on)0.10.140.3Vdc1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Select Documentation/Application Notes --AN1955.(continued)AFT09S282NR3Table 5.Electrical Characteristics (T A =25°C unless otherwise noted)(continued)CharacteristicSymbolMinTypMaxUnitFunctional Tests (1)(In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =1400mA,P out =80W Avg.,f =960MHz,Single--Carrier W--CDMA,IQ Magnitude Clipping,Input Signal PAR =7.5dB @0.01%Probability on CCDF.ACPR measured in 3.84MHz Channel Bandwidth @±5MHz Offset.Power Gain G ps 19.020.022.0dB Drain EfficiencyηD 33.536.1—%Output Peak--to--Average Ratio @0.01%Probability on CCDF PAR 5.6 6.1—dB Adjacent Channel Power Ratio ACPR —--37.5--36.0dBc Input Return LossIRL—--17--10dBLoad Mismatch (In Freescale Test Fixture,50ohm system)I DQ =1400mA,f =940MHzVSWR 10:1at 32Vdc,416W CW Output Power(3dB Input Overdrive from 280W CW Rated Power)No Device DegradationTypical Performance (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =1400mA,920--960MHz Bandwidth P out @1dB Compression Point,CWP1dB —280—W VBW Resonance Point(IMD Third Order Intermodulation Inflection Point)VBW res —60—MHz Gain Flatness in 40MHz Bandwidth @P out =80W Avg.G F —0.1—dB Gain Variation over Temperature (--30°C to +85°C)∆G —0.0156—dB/°C Output Power Variation over Temperature (--30°C to +85°C)∆P1dB—0.006—dB/°C1.Part internally matched both on input and output.AFT09S282NR3Figure2.AFT09S282NR3Test Circuit Component Layout*C26is mounted vertically.Table6.AFT09S282NR3Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer C162pF Chip Capacitor ATC100B620JT500XT ATCC2,C5,C10,C13 4.7pF Chip Capacitors ATC600F4R7BT250XT ATCC3,C7,C14,C15,C22,C2310μF Chip Capacitors GRM32ER71H106KA12L MurataC4,C6,C16,C17,C18,C1947pF Chip Capacitors ATC600F470JT250XT ATCC8,C9,C11,C24 3.9pF Chip Capacitors ATC600F3R9BT250XT ATCC12,C20,C21 2.4pF Chip Capacitors ATC600F2R4BT250XT ATCC25470μF,63V Electrolytic Capacitor MCGPR63V477M13X26-RH MulticompC2636pF Chip Capacitor ATC100B360JT500XT ATCR1,R2 6.04Ω,1/4W Chip Resistor CRCW12066R04FKEA VishayPCB0.020″,εr=3.5RO4350RogersAFT09S282NR3TYPICAL CHARACTERISTICSI R L ,I N P U T R E T U R N L O S S (d B )820f,FREQUENCY (MHz)Figure 3.Single--Carrier Output Peak--to--Average Ratio Compression(PARC)Broadband Performance @P out =80Watts Avg.--20--0--5--10--1513232221--4238343026--37--38--39--40ηD ,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )20191817161584086088090092094096098022--41--25A C P R (dB c )Figure 4.Intermodulation Distortion Productsversus Two--Tone SpacingTWO--TONE SPACING (MHz)10-----1100I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )-Figure 5.Output Peak--to--Average RatioCompression (PARC)versus Output PowerP out ,OUTPUT POWER (WATTS)--1--3700--2--4O U T P U T C O M P R E S S I O N A T 0.01%P R O B A B I L I T Y O N C C D F (d B )509011015020504540353025ηD ,D R A I N E F F I C I E N C Y (%)130A C P R (dB c )--50--20--25--30--40--35--4522G p s ,P O W E R G A I N (d B )212019181716P A R C (d B )--1.8--1--1.2--1.4--1.6--2--51AFT09S282NR3TYPICAL CHARACTERISTICS1P out,OUTPUT POWER(WATTS)AVG.Figure6.Single--Carrier W--CDMA Power Gain,DrainEfficiency and ACPR versus Output Power--10--20 16226050403020ηD,DRAINEFFICIENCY(%)Gps,POWERGAIN(dB)21201010030010--60ACPR(dBc) 191817--30--40--50 Figure7.Broadband Frequency Response1123f,FREQUENCY(MHz)191715GAIN(dB)2113700800900100011001200130014001500--402010--10--20IRL(dB)--30AFT09S282NR3V DD =28Vdc,I DQ =1400mA ,Pulsed CW,10μsec(on),10%Duty Cyclef (MHz)Z source (Ω)Z in (Ω)Z load (1)(Ω)Max Linear Gain (dB)Max Output PowerP1dBP3dB(dBm)(W)ηD(%)AM/PM (°)(dBm)(W)ηD (%)AM/PM (°)920 1.83-j3.18 1.66+j3.17 4.55-j3.2718.756.039653.5-8.056.949458.2-12940 2.01-j3.27 2.03+j3.31 4.97-j2.8618.755.939154.4-7.756.949057.6-119602.64-j3.342.55+j3.455.77-j1.7818.455.939153.9-7.956.948857.8-12(1)Load impedance for optimum P1dB power.Z source =Measured impedance presented to the input of the device at the package reference plane.Z in =Impedance as measured from gate contact to ground.Z load =Measured impedance presented to the output of the device at the package reference plane.source inloadFigure 8.Load Pull Performance —Maximum P1dB TuningV DD =28Vdc,I DQ =1400mA ,Pulsed CW,10μsec(on),10%Duty Cyclef (MHz)Z source (Ω)Z in (Ω)Z load (1)(Ω)Max Linear Gain (dB)Max Drain EfficiencyP1dBP3dB(dBm)(W)ηD(%)AM/PM (°)(dBm)(W)ηD (%)AM/PM (°)920 1.83-j3.18 1.70+j3.02 1.49-j1.6122.053.522566.2-1554.326769.6-22940 2.01-j3.27 2.12+j3.16 1.48-j1.8022.053.321566.6-1654.024870.1-249602.64-j3.342.66+j3.261.76-j1.7921.753.623067.4-1554.326970.6-22(1)Load impedance for optimum P1dB efficiency.Z source =Measured impedance presented to the input of the device at the package reference plane.Z in =Impedance as measured from gate contact to ground.Z load =Measured impedance presented to the output of the device at the package reference plane.source inloadFigure 9.Load Pull Performance —Maximum Drain Efficiency TuningAFT09S282NR3P1dB --TYPICAL LOAD PULL CONTOURS —940MHz34567213456721--4.50--0.5--1.5--1--2--2.5--3.5--4--3--4.50--0.5--1.5--1--2--2.5--3.5--4--3--4.50--0.5--1.5--1--2--2.5--3.5--4--3I M A G I N A R Y (Ω)I M A G I N A R Y (Ω)NOTE:=Maximum Output Power=Maximum DrainEfficiencyFigure 10.P1dB Load Pull Output Power Contours (dBm)--4.5REAL (Ω)0--0.5--1.5I M A G I N A R Y (Ω)345Figure 11.P1dB Load Pull Efficiency Contours (%)REAL (Ω)I M A G I N A R Y (Ω)Figure 12.P1dB Load Pull Gain Contours (dB)REAL (Ω)Figure 13.P1dB Load Pull AM/PM Contours (°)REAL (Ω)--1--2--2.5--3.5--467--3213456721Power Gain Drain Efficiency LinearityOutput PowerAFT09S282NR3P3dB --TYPICAL LOAD PULL CONTOURS —940MHzNOTE:=Maximum Output Power =Maximum DrainEfficiencyFigure 14.P3dB Load Pull Output Power Contours (dBm)--41REAL (Ω)--1--2Figure 15.P3dB Load Pull Efficiency Contours (%)REAL (Ω)Figure 16.P3dB Load Pull Gain Contours (dB)REAL (Ω)Figure 17.P3dB Load Pull AM/PM Contours (°)REAL (Ω)Power Gain Drain Efficiency LinearityOutput Power--41--1--2014567--332I M A G I N A R Y (Ω)014567--332--41--1--2I M A G I N A R Y (Ω)014567--332--41--1--2I M A G I N A R Y (Ω)014567--332I M A G I N A R Y (Ω)AFT09S282NR3PACKAGEDIMENSIONSAFT09S282NR311RF Device Data Freescale Semiconductor,Inc.12RF Device Data Freescale Semiconductor,Inc.AFT09S282NR3AFT09S282NR313RF Device Data Freescale Semiconductor,Inc.PRODUCT DOCUMENTATION,SOFTWARE AND TOOLSRefer to the following documents,software and tools to aid your design process.Application Notes•AN1955:Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins•EB212:Using Data Sheet Impedances for RF LDMOS DevicesSoftware•Electromigration MTTF Calculator•RF High Power Model•.s2p FileDevelopment Tools•Printed Circuit BoardsFor Software and Tools,do a Part Number search at ,and select the “Part Number”link.Go to the Software &Tools tab on the part’s Product Summary page to download the respective tool.REVISION HISTORYThe following table summarizes revisions to this document.RevisionDate Description0Oct.2012•Initial Release of Data SheetRF Device Data Freescale Semiconductor,rmation in this document is provided solely to enable system and software implementers to use Freescale products.There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.Freescale reserves the right to make changes without further notice to any products herein.Freescale makes no warranty,representation,or guarantee regarding the suitability of its products for any particular purpose,nor does Freescale assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation consequential or incidental damages.“Typical”parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications,and actual performance may vary over time.All operating parameters,including “typicals,”must be validated for each customer application by customer’s technical experts.Freescale does not convey any license under its patent rights nor the rights of others.Freescale sells products pursuant to standard terms and conditions of sale,which can be found at the following address:/SalesTermsandConditions.Freescale,the Freescale logo,AltiVec,C--5,CodeTest,CodeWarrior,ColdFire,C--Ware,Energy Efficient Solutions logo,Kinetis,mobileGT,PowerQUICC,Processor Expert,QorIQ,Qorivva,StarCore,Symphony,and VortiQa are trademarks of Freescale Semiconductor,Inc.,Reg.U.S.Pat.&Tm.Off.Airfast,BeeKit,BeeStack,ColdFire+,CoreNet,Flexis,MagniV,MXC,Platform in a Package,QorIQ Qonverge,QUICC Engine,Ready Play,SafeAssure,SMARTMOS,TurboLink,Vybrid,and Xtrinsic are trademarks of Freescale Semiconductor,Inc.All other product or service names are the property of their respective owners.E 2012Freescale Semiconductor,Inc.How to Reach Us:Home Page: Web Support:/support。
郎汉德PLC触摸屏一体机（4.3寸）产品说明书文件版本：V1.0.0目录1.产品简介 (3)2.参数详情 (3)2.1.电气参数 (3)2.2.PLC编程电缆参数 (4)2.3.选型表 (6)2.4.拨码状态 (7)2.5.接线图 (8)2.5.1.晶体管输出型号引脚定义 (8)2.5.2.继电器输出型号引脚定义 (10)2.6.PLC地址 (11)2.6.1.PLC地址使用情况 (11)2.6.2.特殊寄存器和位 (12)2.7.模拟量转换 (16)2.8.兼容三菱指令 (17)3.通信使用 (21)3.1.串口通信配置 (21)3.2.一体机内部PLC与HMI通讯（COM2） (22)3.2.1.使用FX3U协议内部通讯 (22)3.2.2.使用Modbus RTU内部通讯 (25)3.3.串口通信发送与接收数据的应用（COM4） (27)3.3.1.PLC做为Modbus从站通信 (27)3.3.2.串口自由通信协议ADPRW指令使用 (28)3.3.3.Modbus主站通信协议ADPRW指令使用 (31)4.售后 (33)4.1.联系方式 (33)4.2.免责声明 (33)1.产品简介本产品为PLC触摸屏一体机。
PLC支持3U编程风格；HMI组态图库丰富。
2.参数详情2.1.电气参数类别项目参数电气环境供电电源额定24V,12-32V宽压输入范围;内部与外供电电气隔离工作温度0~55°C湿度5%-95%RH(非结露)抗干扰性峰值:1500vp-p;幅度1uS;上升时间:30ms;周期30-100HZ抗震动符合IEC61121-2标准电气隔离性能通讯隔离性通讯口均与内部隔离电源隔离性内部5V、15V之间隔离;与24V输入隔离数字量量输入导通状态高于DC15V,2.5mA 关断状态低于DC7V,1mA晶体管输出响应时间ON->OFF20us以内OFF->ON50us以内输出电压范围DC5V~30V额定输出负载0.75A@DC24V继电器输出响应时间10ms以内输出电压范围DC5V-30或AC5V~250V 额定输出电压DC24V/2A或AC220V/2.0A 使用寿命机械1千万次电气10万次（额定负载）模拟量输出输出范围电压输出0~10V 电流输出0~20mA模拟量输入输入范围电流输入0-20mA或4-20mA电压输入0-10V运动控制脉冲输出速度可达200KHZ 计数输入速度可200K以上2.2.PLC编程电缆参数一体机的PLC部分，对应的编程口为RS232通信。
Document Number: 94233For technical questions, contact: diodes-tech@Schottky Rectifier, 5.5 A50WQ04FNPbFVishay High Power ProductsFEATURES•Popular D-PAK outline•Small foot print, surface mountable •Low forward voltage drop •High frequency operation•Guard ring for enhanced ruggedness and long term reliability•Lead (Pb)-free (“PbF” suffix)•Designed and qualified for AEC Q101 levelDESCRIPTIONThe 50WQ04F NPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters,freewheeling diodes, battery charging, and reverse battery protection.PRODUCT SUMMARYI F(AV) 5.5 A V R40 VMAJOR RATINGS AND CHARACTERISTICSSYMBOL CHARACTERISTICS VALUES UNITS I F(AV)Rectangular waveform5.5A V RRM 40V I FSM t p = 5 µs sine 340A V F 5 Apk, T J = 125 °C 0.44V T JRange- 40 to 150°CVOLTAGE RATINGSPARAMETER SYMBOL 50WQ04FNPbFUNITS Maximum DC reverse voltageV R 40VMaximum working peak reverse voltageV RWMABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL TEST CONDITIONSVALUES UNITSMaximum average forward current See fig. 5I F(AV)50 % duty cycle at T C = 135 °C, rectangular waveform 5.5A Maximum peak one cycle non-repetitive surge current See fig. 7I FSM 5 µs sine or 3 µs rect. pulseFollowing any rated load condition and with rated V RRM applied55010 ms sine or 6 ms rect. pulse 90Non-repetitive avalanche energy E AS T J = 25 °C, I AS = 1.5 A, L = 8 mH9mJ Repetitive avalanche currentI ARCurrent decaying linearly to zero in 1 µsFrequency limited by T J maximum V A = 1.5 x V R typical1.2A * Pb containing terminations are not RoHS compliant, exemptions may apply元器件交易网 For technical questions, contact: diodes-tech@Document Number: 9423350WQ04FNPbFVishay High Power Products Schottky Rectifier, 5.5 ANote(1)Pulse width < 300 µs, duty cycle < 2 %Note(1)thermal runaway condition for a diode on its own heatsinkELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSVALUES UNITSMaximum forward voltage drop See fig. 1V FM (1)5 AT J = 25 °C 0.51V 10 A 0.635 A T J = 125 °C 0.4410 A0.59Maximum reverse leakage current See fig. 2I RM (1)T J = 25 °C V R = Rated V R3mA T J = 125 °C 40Thereshold voltage V F(TO)T J =T J maximum0.27V Forward slope resistance r t 26.77m ΩTypical junction capacitance C T V R = 5 V DC (test signal range 100 kHz to 1 MHz) 25 °C 405pF Typical series inductanceL SMeasured lead to lead 5 mm from package body5.0nH THERMAL - MECHANICAL SPECIFICATIONSPARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storagetemperature rangeT J (1), T Stg - 40 to 150°C Maximum thermal resistance,junction to case R thJCDC operationSee fig. 43.0°C/W Approximate weight 0.3g 0.01oz.Marking device Case style D-PAK (similar to TO-252AA)50WQ04FNdP tot dT J -------------1R thJA--------------<元器件交易网Document Number: 94233For technical questions, contact: diodes-tech@50WQ04FNPbFSchottky Rectifier, 5.5 AVishay High Power ProductsFig. 1 - Maximum Forward Voltage Drop CharacteristicsFig. 2 - Typical Values of Reverse Current vs.Reverse VoltageFig. 3 - Typical Junction Capacitance vs. Reverse VoltageFig. 4 - Maximum Thermal Impedance Z thJC Characteristics元器件交易网 For technical questions, contact: diodes-tech@Document Number: 9423350WQ04FNPbFVishay High Power Products Schottky Rectifier, 5.5 AFig. 5 - Maximum Allowable Case Temperature vs.Average Forward CurrentFig. 6 - Forward Power Loss CharacteristicsFig. 7 - Maximum Non-Repetitive Surge CurrentNote(1)Formula used: T C = T J - (Pd + Pd REV ) x R thJC ;Pd = Forward power loss = I F(AV) x V FM at (I F(AV)/D) (see fig. 6);Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R元器件交易网元器件交易网Schottky Rectifier, 5.5 A Vishay High Power ProductsORDERING INFORMATION TABLELINKS TO RELATED DOCUMENTSDimensions /doc?95016Part marking information /doc?95059Packaging information /doc?95033Document Number: 94233For technical questions, contact: diodes-tech@ Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。
