2N65
- 格式:pdf
- 大小:706.30 KB
- 文档页数:6


2N3866
Silicon NPN Transistor
Frequency Multiplier and Driver in VHF/UHF
Transmitters
C B E
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
CEO 30V
Collector-Base Voltage, V
CBO 55V
Emitter-Base Voltage, V
EBO 3.5V
Continuous Collector Current, I
C 400mA
Total Device Dissipation (T
C = +25°C), P
D 5W
Derate above 25°C 28.6mW/°C
Storage Temperature Range, T
stg -65°C to +200°C
Electrical Characteristics: (T
A = +25°C unless otherwise specified)
ParameterSymbolTest ConditionsMinTypMaxUnit
OFF Characteristics
Collector-Emitter Breakdown VoltageV
CER(sus)I
C = 5mA, R
BE = 10 Ohm55--V
Collector-Emitter Sustaining VoltageV
CEO(sus)I
C = 5mA, I
B = 030--V
Emitter-Base Breakdown VoltageV
(BR)EBOI
F = 100µA, I
C = 03.5--V
Collector Cutoff CurrentI
CEOV
CE = 28V, I
B = 0--0.02mA
I
CEXV
CE = 30V, V
BE = -1.5V, T
C = +200°C--5.0mA
V
CE = 55V, V
BE = -1.5V--0.1mA
CBETO-92C
BE
BCC
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.SymbolParameterValueUnits
VCEOCollector-Emitter Voltage40V
VCBOCollector-Base Voltage60V
VEBOEmitter-Base Voltage6.0V
ICCollector Current - Continuous200mA
TJ, TstgOperating and Storage Junction Temperature Range-55 to +150°C
2001 Fairchild Semiconductor CorporationThermal Characteristics TA = 25°C unless otherwise noted
FSGM0765RWDTUFSL106HR 、FSL106MR 、FSL116LR 、
开关电源常用芯片
FSCQ1265RTYDTU 、 FSCQ1565RTYDTUFSDL321
FSDH321 、FSDL0165RN 、FSDM0265RNB 、FSDH0265RN 、
FSDM0365RNB 、 FSDL0365RN 、 FSDM0465REWDTU
FSDM0565REWDTU 、FSDM07652REWDTU
FSDM311A 、FSEZ1016AMY 、 FSEZ1317NY 、 Fairchild 仙童(飞兆)系列开关电源驱动芯片
FAN100MY 、 FAN102MY 、FAN103MY 、 FAN6208 、
FAN6300AMY 、 FAN6754AMRMY 、FAN6862TY 、
FAN6921MRMY 、FAN6961SZ 、FAN7346MX 、FAN7384MX 、
FAN7319MX 、FAN7527BMX 、FAN7527BN 、FAN7554N 、
FAN7554DFAN7621 、FAN7621SSJ 、FAN7621B 、FAN7631 、
FAN7930CMX ;FAN6204MYFL103 、FL6300A 即 FAN6300 、
FL6961 、FL7701 、FL7730 、FL7732 、FL7930B 、FLS0116 、FLS3217 、FLS3247 、FLS1600XS 、FLS1800XS 、 FLS2100XSFSFR1600 、 FSFR1600XSL 、
FSFR1700 、FSFR1700XS 、FSFR1700XSL 、FSFR1800 、
FSFR1800XS 、 FSFR1800XSL 、FSFR2100XSL 、
FSFR2100FSCQ0565RTYDTU 、FSCQ0765RTYDTU
、FSDM311 、 FSEZ1317MYFSGM0465RWDTU 、FSGM0565RWDTU SD4569 )、ME8204 (兼容 SG6848 、OB2263 、OB2273 、
1
Motorola Small–Signal Transistors, FETs and Diodes Device DataAmplifier TransistorsNPN Silicon
MAXIMUM RATINGSRatingSymbolValueUnitCollector–Emitter VoltageVCEO40VdcCollector–Base VoltageVCBO75VdcEmitter–Base VoltageVEBO6.0VdcCollector Current — ContinuousIC600mAdcTotal Device Dissipation @ TA = 25°CDerate above 25°CPD6255.0mWmW/°CTotal Device Dissipation @ TC = 25°CDerate above 25°CPD1.512WattsmW/°COperating and Storage JunctionTemperature RangeTJ, Tstg–55 to +150°CTHERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200°C/WThermal Resistance, Junction to CaseRqJC83.3°C/WELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector–Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO40—VdcCollector–Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO75—VdcEmitter–Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR)EBO6.0—VdcCollector Cutoff Current(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)ICEX—10nAdcCollector Cutoff Current(VCB = 60 Vdc, IE = 0)(VCB = 60 Vdc, IE = 0, TA = 150°C)ICBO——0.0110µAdcEmitter Cutoff Current(VEB = 3.0 Vdc, IC = 0)IEBO—10nAdcCollector Cutoff Current(VCE = 10 V)ICEO—10nAdcBase Cutoff Current(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)IBEX—20nAdcOrder this documentby P2N2222A/DMOTOROLASEMICONDUCTOR TECHNICAL DATAP2N2222A