APOPS introduction2010-3-29_材料科学_工程科技_专业资料.ppt

SPiiPlus IOMnt EtherCAT ModuleHardware GuideSPiiPlus IOMnt EtherCAT ModuleVersion NT 2.20, 31 January 2013COPYRIGHTCopyright ® 1999 - 2013 ACS MotionControl Ltd.Changes are periodically made to the information in this document. Changes are published as release notes and are subsequently incorporated into updated revisions of this document.No part of this document may be reproduced in any form without prior written permission from ACS MotionControl.TRADEMARKSACS MotionControl, PEG and SPiiPlus are trademarks of ACS MotionControl Ltd.EtherCAT® is registered trademark and patented technology, licensed by Beckhoff Automation GmbH, Germany.Visual Basic and Windows are trademarks of Microsoft Corporation.Any other companies and product names mentioned herein may be the trademarks of their respective owners.Web Site: Information: info@Tech Support: support@ ACS Motion Control, Ltd.Ramat Gabriel Industrial ParkPOB 5668Migdal HaEmek, 10500ISRAELTel: (972) (4) 6546440Fax: (972) (4) 6546443NOTICEThe information in this document is deemed to be correct at the tim e of publishing. ACS MotionControl reserves the right to change specifications without notice. ACS MotionControl is not responsible for incidental, consequential, or special damages of any kind in connection with using this document.SPiiPlus IOMnt EtherCAT ModuleChanges in Version NT 2.20Page ChangeConventions Used in this GuideText FormatsSeveral text formats and fonts, i llustrated in Table 1, are used in t he text to convey information about the text.Table 1Text Format ConventionsSPiiPlus IOMnt EtherCAT ModuleFlagged TextThe following symbols are used in flagging text:SPiiPlus IOMnt EtherCAT ModuleRelated DocumentsThe following documents provide additional details relevant to this guide:Table 2Related DocumentationAbout this DocumentThis document provides detailed information of the SPi iPlus IOMnt EtherCAT Module, which is a general purpose digital I/O module designed to be supported by all ACS SPiiPlus EtherCAT master controllers. The guide is organized as follows:❑Chapter 1 - SPiiPlus IOMnt EtherCAT Module Overview❑Chapter 2 - Installation❑Chapter 3 - SPiiPlus IOMnt EtherCAT Module Operation❑Chapter 4 - SPiiPlus IOMnt EtherCAT Module SpecificationsSPiiPlus IOMnt EtherCAT Module Table of ContentsTable of ContentsConventions Used in this Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Text Formats . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Flagged Text. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v About this Document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v 1SPiiPlus IOMnt EtherCAT Module Overview . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1About the SPiiPlus IOMnt EtherCAT Module . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2SPiiPlus IOMnt EtherCAT Module Block Diagram . . . . . . . . . . . . . . . . . . . . . 2 1.3Ordering Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2Installation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1Safety and EMC Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1.1General Safety Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1.2External Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2Installing the SPiiPlus IOMnt EtherCAT Module . . . . . . . . . . . . . . . . . . . . . . . 4 2.2.1Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2.2Electrical Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2.2.1Inputs 0-15 Connector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2.2.2Inputs 16-31 Connector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2.2.3Outputs 0-15 Connector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.2.4Outputs 16-31 Connector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2.2.5EtherCAT IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.2.2.6EtherCAT OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.2.2.724V Control Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.2.2.8EtherCAT Network Cable Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.2.3Cooling Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3SPiiPlus IOMnt EtherCAT Module Operation . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1Minimal Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.2Setting and Configuring the EtherCAT Network . . . . . . . . . . . . . . . . . . . . . . . 16 3.3Assigning Inputs and Outputs to ACSPL+ Variables . . . . . . . . . . . . . . . . . . . 16 3.3.1Input Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.3.2Output Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.4Fault & Error Handling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.4.1SPiiPlus IOMnt EtherCAT Module LED Indicators . . . . . . . . . . . . . . . . . . . 18 3.4.2Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4SPiiPlus IOMnt EtherCAT Module Specifications . . . . . . . . . . . . . . . . . . . . . 20 4.1Control Supply Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3Digital Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.4EtherCAT Ports . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.5Certifications and Environmental Conditions . . . . . . . . . . . . . . . . . . . . . . . . . 22SPiiPlus IOMnt EtherCAT Module List of FiguresList of FiguresFigure 1SPiiPlus IOMnt EtherCAT Module. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 2SPiiPlus IOMnt EtherCAT Module Block Diagram. . . . . . . . . . . . . . . . . . . . . . 2 Figure 3SPiiPlus IOMnt EtherCAT Module Ordering Code . . . . . . . . . . . . . . . . . . . . . . 3 Figure 4SPiiPlus IOMnt EtherCAT Module Front Panel. . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5SPiiPlus IOMnt Digital Inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 6SPiiPlus IOMnt Digital Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 7SPiiPlus IOMnt EtherCAT Module LED Locations. . . . . . . . . . . . . . . . . . . . . 18SPiiPlus IOMnt EtherCAT Module List of TablesList of TablesTable 1Text Format Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Table 2Related Documentation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Table 3J3 - Digital Input Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 4J4 - Digital Input Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 5J5 - Digital Output Connector Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 6J6 - Digital Input Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 7J1 - EtherCAT IN Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 8J2 - EtherCAT OUT Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 9J7 - 24V Control Supply Connector Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 10SPiiPlus IOMnt EtherCAT Module LED Indicators. . . . . . . . . . . . . . . . . . . . . 18 Table 11SPiiPlus IOMnt EtherCAT Module Control Supply Input . . . . . . . . . . . . . . . . 20 Table 12SPiiPlus IOMnt EtherCAT Module Digital Inputs. . . . . . . . . . . . . . . . . . . . . . 20 Table 13SPiiPlus IOMnt EtherCAT Module Digital Outputs. . . . . . . . . . . . . . . . . . . . . 21 Table 14SPiiPlus IOMnt EtherCAT Module EtherCAT Ports . . . . . . . . . . . . . . . . . . . . 211SPiiPlus IOMnt EtherCAT ModuleOverviewThe SPiiPlus IOMnt EtherCAT Module is a general purpose digital IO module designed to be supported by all ACS SPiiPlus EtherCAT master controllers. It can support up to 32 inputs and 32 outputs.1.1About the SPiiPlus IOMnt EtherCAT ModuleThe SPiiPlus IOMnt EtherCAT Module (shown in Figure 1) is a 32 input and 32 output ACS EtherCAT network element. The product is configured, controlled and monitored by an ACS master (MC4U SPiiPlusNT, NTM or SPiiPlusSC) and matching software tools.The SPiiPlus IOMnt EtherCAT Module operates as part of, and in conjunction with, all of ACS network elements: SDMnt, PDMnt, UDMnt, and MC4U (DC controller based as a network slave unit).The SPiiPlus IOMnt EtherCAT Module is powered by 24Vdc. It has two RJ45 connectors for EtherCAT communication, and four 20-pin connectors for ribbon cable inputs and outputs. The unit displays a 'system status' indication, EtherCAT communication information, and per input and per output on/off indication.Figure 1SPiiPlus IOMnt EtherCAT Module1.2SPiiPlus IOMnt EtherCAT Module Block Diagram Figure 2 presents the SPiiPlus IOMnt EtherCAT Module block diagramFigure 2SPiiPlus IOMnt EtherCAT Module Block DiagramSPiiPlus IOMnt EtherCAT Module SPiiPlus IOMnt EtherCAT Module Overview1.3Ordering OptionsThis section presents the ordering options for the SPiiPlus IOMnt EtherCAT Module product line.Figure 3 illustrates the SPiiPlus IOMnt EtherCAT Module ordering code.SPiiPlus IOMnt-XX-YYFigure 3SPiiPlus IOMnt EtherCAT Module Ordering CodeWhere:❑XX is the number of inputs and can be 8, 16, or 32.❑YY is the number of outputs and can be 8, 16, or 32.2InstallationThis chapter provides instructions for installing the SPiiPlus IOMnt EtherCAT Module.2.1Safety and EMC Guidelines2.1.1General Safety GuidelinesUnder emergency situations the unit should be completely disconnected from any power supply.2.1.2External Power SupplyThe SPiiPlus IOMnt EtherCAT Module must not be connected to unlimited power sources. The SPiiPlus IOMnt EtherCAT Module must not b e connected to telecommunication networks. For compliance with UL requirements the SPiiPlus IOMnt EtherCAT Module should only be supplied by:❑ A 24 Vdc supply voltage, supplied by an isolating source and protected by means of a fuse (in accordance with UL248), rated maximum 20 Amp, or❑ A 24 Vdc supply sourc e that satisfies NEC Class 2; however the NEC Cla ss 2 power supply must not be connected in series or parallel with another Class 2 power source.2.2Installing the SPiiPlus IOMnt EtherCAT ModuleThis section provides instructions for installing the unit.2.2.1DimensionsThe SPiiPlus IOMnt EtherCAT Module is a closed plastic box, DIN rail mounting only (IP 20), with the following dimensions:W = 101 ±0.5 mmL = 65.5 ±0.5 mmH1= 28 ±0.5 mmH2 = 37 ±0.5 mm (with DIN-rail)H3 = 22 ±0.5 mm (connectors height above the panel)2.2.2Electrical InterfacesThis section details the SPiiPlus IOMnt EtherCAT Module on-board connectors and connectivity. Refer to Figure 4 for the locations of the connectors.Figure 4SPiiPlus IOMnt EtherCAT Module Front PanelFigure 5SPiiPlus IOMnt Digital InputsFigure 6SPiiPlus IOMnt Digital Outputs2.2.2.1Inputs 0-15 ConnectorLabel: J3 - Inputs 0-15Connector Type: IDC Header 20 pin 2.54mm, high profile latch (Beckhoff EL1872 compatible) Mating Type: Flat Ribbon 20 pin 2.54mmThe pinout for J3 is given in Table 3.Table 3J3 - Digital Input Connector Pinout (page 1 of 2)Pin Name Description1IN0Digital input 02IN1Digital input 13IN2Digital input 24IN3Digital input 35IN4Digital input 46IN5Digital input 57IN6Digital input 68IN7Digital input 79IN8Digital input 810IN9Digital input 911IN10Digital input 1012IN11Digital input 1113IN12Digital input 1214IN13Digital input 1315IN14Digital input 1416IN15Digital input 151724V24V I/O supply output2.2.2.2Inputs 16-31 ConnectorLabel: J4 - Inputs 16-31 Connector Type: IDC Header 20 pin 2.54mm, high profile latch (Beckhoff EL1872 compatible)Mating Type: Flat Ribbon 20 pin 2.54mmThe pinout for J4 is given in Table 4.1824V_RTN 24V I/O supply output return 1924V 24V I/O supply output 2024V_RTN 24V I/O supply output returnTable 4J4 - Digital Input Connector Pinout (page 1 of 2)PinName Description 1IN16Digital input 162IN17Digital input 173IN18Digital input 184IN19Digital input 195IN20Digital input 206IN21Digital input 217IN22Digital input 228IN23Digital input 239IN24Digital input 2410IN25Digital input 2511IN26Digital input 26Table 3J3 - Digital Input Connector Pinout (page 2 of 2)PinName Description2.2.2.3Outputs 0-15 ConnectorLabel: J5 - Outputs 0-15 Connector Type: IDC Header 20 pin 2.54mm, high profile latch (Beckhoff EL1872 compatible)Mating Type: Flat Ribbon 20 pin 2.54mmThe pinout for J5 is given in Table 5.12IN27Digital input 2713IN28Digital input 2814IN29Digital input 2915IN30Digital input 3016IN31Digital input 311724V 24V I/O supply output 1824V_RTN 24V I/O supply output return 1924V 24V I/O supply output 2024V_RTN 24V I/O supply output returnTable 5J5 - Digital Output Connector Pinout (page 1 of 2)PinName Description 1OUT0Digital output 02OUT1Digital output 13OUT2Digital output 24OUT3Digital output 35OUT4Digital output 4Table 4J4 - Digital Input Connector Pinout (page 2 of 2)PinName Description2.2.2.4Outputs 16-31 ConnectorLabel: J6 - Outputs 16-31 Connector Type: IDC Header 20 pin 2.54mm, high profile latch (Beckhoff EL1872 compatible)Mating Type: Flat Ribbon 20 pin 2.54mmThe pinout for J6 is given in Table 6.6OUT5Digital output 57OUT6Digital output 68OUT7Digital output 79OUT8Digital output 810OUT9Digital output 911OUT10Digital output 1012OUT11Digital output 1113OUT12Digital output 1214OUT13Digital output 1315OUT14Digital output 1416OUT15Digital output 151724V 24V I/O supply output 1824V_RTN 24V I/O supply output return 1924V 24V I/O supply output 2024V_RTN 24V I/O supply output returnTable 5J5 - Digital Output Connector Pinout (page 2 of 2)PinName DescriptionTable 6J6 - Digital Input Connector PinoutPin Name Description1OUT16Digital output 162OUT17Digital output 173OUT18Digital output 184OUT19Digital output 195OUT20Digital output 206OUT21Digital output 217OUT22Digital output 228OUT23Digital output 239OUT24Digital output 2410OUT25Digital output 2511OUT26Digital output 2612OUT27Digital output 2713OUT28Digital output 2814OUT29Digital output 2915OUT30Digital output 3016OUT31Digital output 311724V24V I/O supply output 1824V_RTN24V I/O supply output return 1924V24V I/O supply output 2024V_RTN24V I/O supply output return2.2.2.5EtherCAT INLabel: J1 - EtherCAT INConnector Type: RJ45Mating Type: Ethernet plugThe pinout for J1 is given in Table 7.Table 7J1 - EtherCAT IN Connector PinoutPin Name Description1TD+Positive transmit signal 2TD-Negative transmit signal 3RD+Positive receive signal 4NC Not connected5NC Not connected6RD-Negative receive signal 7NC Not connected8NC Not connected2.2.2.6EtherCAT OUTLabel: J2 - EtherCAT OUTConnector Type: RJ45Mating Type: Ethernet plugThe pinout for J2 is given in Table 8.Table 8J2 - EtherCAT OUT Connector Pinout Pin Name Description1TD+Positive transmit signal 2TD-Negative transmit signal 3RD+Positive receive signal 4NC Not connected5NC Not connected6RD-Negative receive signal 7NC Not connected8NC Not connected2.2.2.724V Control SupplyLabel: J7 - 24V Control SupplyConnector Type: 5 pin Molex, MCV 1,5/5 GF-3.81Mating Type: Molex MC 1,5/5-STF 3.81The pinout for J7 is given in Table 8.Table 9J7 - 24V Control Supply Connector PinoutPin Name Description124V24V control supply2RTN24V control supply return324V24V control supply (used only when more than 8A inputcurrent is required)4RTN24V control supply return (used only when more than 8Ainput current is required)5SHIELD Electrical ground/shield2.2.2.8EtherCAT Network Cable LimitationThe SPiiPlus IOMnt EtherCAT Module meets the EtherCAT specification requirements of maximum cable length of 100m. The minimum cable length is 1m. It is recommended using only standard high quality CAT5e cables..2.2.3Cooling Air Flow3SPiiPlus IOMnt EtherCAT ModuleOperationThis chapter provides instructions for operating the SPiiPlus IOMnt EtherCAT Module.3.1Minimal ConfigurationAn ACS EtherCAT master and one SPiiPlus IOMnt EtherCAT Module form the minimal configuration for operation. The number of IOMnt modules, or a mix of the IOMnt modules and other ACS network products, is currently limited to 32. Expansion of up to 64 is planned for the future.3.2Setting and Configuring the EtherCAT Network Network settings and configuration are performed using the EtherCAT Configurator and the System Configuration Wizard of the SPiiPlus MMI Application Studio. The SPiiPlus MMI Application Studio is provided as part of any ACS Motion Control NT system. Usually, a customer receives any ACS EtherCAT master pre-configured with software that reflects the type and quantity of ordered products. Upon powering up a network, the master compares the actual detected network elements and its programmed configuration. Further information on setting up and configuring ACS networks can be found in the SPiiPlus NT Setup Guide.3.3Assigning Inputs and Outputs to ACSPL+ Variables 3.3.1Input AssignmentThe ACSPL+ ECIN function is used for assigning inputs. This function copies the EtherCAT network input variable at the corresponding EtherCAT offset into the specified ACSPL+ variable. The format is:ECIN(int offset, Varname)Where:offset is the internal EtherCAT offset of a network variable.Varname is the name of an ACSPL+ variable, global or standardFor example, in the SPiiPlus IOMnt EtherCAT Module the following can be used for mapping the input:❑ECIN(YYY,XXX) for IN 0-7❑ECIN(YYY,XXX) for IN 8-15❑ECIN(YYY,XXX) for IN 16-23❑ECIN(YYY,XXX) for IN 24-31Where:YYY is the offset of the IN variable that was found using the #ETHERCAT command and XXX is the name of the ACSPL+ variable.For example:ECIN(26,V0)Maps the network IN variable at offset 26 to the global real variable: V0.3.3.2Output AssignmentThe ACSPL+ ECOUT function is for assigning outputs. The function copies the value of the ACSPL+ variable into the network output variable at the corresponding EtherCAT offset. The format is:ECOUT(int offset, Varname)Where:offset is the internal EtherCAT offset of a network variable.Varname is the name of an ACSPL+ variable, global or standardFor example, in the SPiiPlus IOMnt EtherCAT Module the following can be used for mapping the output:❑ECOUT(YYY,XXX) for OUT 0-7❑ECOUT(YYY,XXX) for OUT 8-15❑ECOUT(YYY,XXX) for OUT16-23❑ECOUT(YYY,XXX) for OUT 24-31Where:YYY is the offset of the OUT variable that was found using the #ETHERCAT command and XXX is the name of the ACSPL+ variable.For example:ECOUT(29,V1)Maps the network OUT variable at offset 29 to the global real variable: V1.3.4Fault & Error Handling3.4.1SPiiPlus IOMnt EtherCAT Module LED Indicators This section details the SPiiPlus IOMnt EtherCAT Module LED indicators.Table 10 provides details of the LED indicators located on the SPiiPlus IOMnt EtherCAT Module (shown in Figure 7).Figure 7SPiiPlus IOMnt EtherCAT Module LED LocationsTable 10SPiiPlus IOMnt EtherCAT Module LED Indicators (page 1 of 2) Label Description Remarks24V Yellow LED❑Off - no power❑On - power supply is ok.Located on the RJ45 Ethernet connector output port.Link Act Two green LEDs❑Off - No link❑Blinking - Link and activity❑On - Link without activityOne per each Ethernet port.Run Yellow, LED❑Off -The device is in the INIT state❑Blinking (slow) -The device is inthe PRE-OPERATIONAL state❑Single Flash -The device is in theSAFE-OPERATIONAL state❑On -The device is in theOPERATIONAL state❑Flickering (fast) -The device is inthe BOOTSTRAP state Located on RJ45 Ethernet connector input port.3.4.2TroubleshootingIf, from any reason, communication with the master is lost and the watch dog is activated, the SPiiPlus IOMnt EtherCAT Module goes into the Alarm state. In the Alarm state the following occurs:❑System LED illuminates red.❑I/O LEDs go to default state (output=off, input = off)If this happens:1.Check that all the cables connected to the SPiiPlus IOMnt EtherCAT Module are well seated. If any have come loose, reinsert them.2.Check that the EtherCAT master is operative. If not, reset it.If the problem was with the master, once it is reset, the SPiiPlus IOMnt EtherCAT Module automatically recovers when the communication is reestablished.3.In the event that the rest of the system is operating normally but all the fault indicators remain illuminated, replace the SPiiPlus IOMnt EtherCAT Module.System Bicolor LED ❑Red - EtherCAT communication Fault.❑Green - Communication and System Ok.❑Blinking - Software command.Indicates EtherCAT statusI/O LEDs 64 Green LEDs, one per each input and output In case of a short circuit or over temperature, all the output LEDs will blink and the shorted one will remain off.Table 10SPiiPlus IOMnt EtherCAT Module LED Indicators (page 2 of 2)LabelDescription Remarks4SPiiPlus IOMnt EtherCAT ModuleSpecificationsThis chapter provides the SPiiPlus IOMnt EtherCAT Module specifications.4.1Control Supply InputTable 11 provides details on the SPiiPlus IOMnt EtherCAT Module 24V control supply input. The 24V is used for I/O supply and for internal circuits.Table 11SPiiPlus IOMnt EtherCAT Module Control Supply InputDescription RemarksSignal Designation24V,24V_RTN.Quantity1Input voltage24Vdc, -15% to +20%Input current Maximum input current: 16.3A @20.4VProtection Short circuit current.4.2Digital InputsTable 12 provides details on the SPiiPlus IOMnt EtherCAT Module digital inputs.Table 12SPiiPlus IOMnt EtherCAT Module Digital InputsDescription RemarksSignal Designation IN0 to IN31Quantity32Type24V±20%, Opto-isolated, sourcetype.Input Current< 8mAInput Level“0” signal voltage: 0 to +5V“1” signal voltage: 11 to 30V4.3Digital OutputTable 13 provides details on the SPiiPlus IOMnt EtherCAT Module digital outputs.Table 13SPiiPlus IOMnt EtherCAT Module Digital OutputsDescription RemarksSignal Designation OUT0 to OUT31Quantity32Type24V±20%, Opto-isolated, sourcetype.Output Current per< 0.5AOutputProtection Over current - 0.6 to 1.5AOver temperature - 125 to 135ºCDrop Output< 250mV@0.5A4.4EtherCAT PortsTable 14 provides details on the SPiiPlus IOMnt EtherCAT Module EtherCAT ports.Table 14SPiiPlus IOMnt EtherCAT Module EtherCAT PortsDescription RemarksSignal Designation Transmit:ETH#_TX±Receive:ETH#_RX±Quantity2Input and Output portType EtherCAT protocolSpeed100Mbps4.5Certifications and Environmental ConditionsThe SPiiPlus IOMnt EtherCAT Module has been tested to operate in the range of the following:❑Rated for operation in the following range of temperatures: 0 to + 55°C.❑Rated for storage and transport in the following range of temperatures: -25 to +85°C The SPiiPlus IOMnt EtherCAT Module can be safely stored and transported in RelativeHumidity of up to 95%, no condensation.The SPiiPlus IOMnt EtherCAT Module is certified for the EN 60068-2-6/EN 60068-2-27/29 shock and vibration standards.The product complies with RoHS requirements.The SPiiPlus IOMnt EtherCAT Module is certified for the EN 61000-6-2/EN 61000-6-4 EMC standard.。

Dr. Imre PascikBIOTREATMENT OF WASTEWATERbyLEVAPOR BIOFILM TECHNOLOGIESMANUAL FOR PLANT DESIGNLEVAPOR GmbH, Leverkusen 2014. AprilS tructureIntroductionActivated sludge technologyBiotreatment of industrial wastewaterProblems at biotreatment of industrial pollutantsImmobilisation of biomass, requests on optiized carrierLEVAPOR carrier: attributesEffects of LEVAPOR carrier on aerobic and anaerobic bioprocessesDesign of LEVAPOR supported biotreatment plants∙Biokinetics : degree of degradation, reaction velocity, loading rates,∙Aeration, fluidization∙Carrier retention∙Generation and separation of excess sludgeProcess economyINTRODUCTIONPorous, adsorbent, LEVAPOR biocarrier represent an special type of high performance carrier materials for microorganisms, created and developed onbasis of various scientific and practice oriented requirements.LEVAPOR carrier comprise of flexible, porous polymeric foams, coated withsurface active, adsorbent pigments, giving the material new attributes, essentialfor their practical application, completed with a final dimensions and shape ofthe product, optimized for an energy saving aeration and fluidization.The optimized biophysical attributes and extremely high surface enable a significantly lower degree of reactor filling of only 12 to 15 vol. % instead of40 to 60 % for classical alternative plastic carriers.Due to the new carrier type, but also to a different approach to solutions of wastewater problems, a manual about LEVAPOR carrier and their applicationseems to be useful. THE ACTIVATED SLUDGE TECHNOLOGYThe biotreatment of mechanically pretreated municipal sewage, containing primarilyeasy biodegradable pollutants, in large, flat basins by aeration in presence of 3 to 4g/L active microbial flocs (“activated sludge”), represents since more than100 yearsthe most widespread technology for their treatment.Because of their similar composition, results and experiences from a bio-treatmentplant can be easily transferred and used for the design of other plants.From the other side, industrial effluents are contaminated with various, industry-specific pollutants of differing chemical structure, biodegradability and solubility,making them often slowly or non biodegradable (color, additive, etc.), but sometimesalso toxic.Fig. 1 Untreated industrial effluentsThe above mentioned attributes of pollutants as well as understanding daily fluctuatingflow of various industrial effluent streams are essential for the technology and designof plants for their treatment. While∙Design of sewage treatment plants are basing usually on the number of population and water consumption,∙Design of industrial treatment plants require still serious preliminary work, as well as practice oriented research and test work, in order to achieve optimizedtailor-made-solutions,∙where high removal of pollutants and stable process represent the main targets. DEVELOPMENT OF BIOTREATMENT PROCESSESEarlier also industrial effluent treatment plants had been designed on basis ofprinciples as applied to municipal plants, however due to different chemical structureof their pollutants (“COD” and “BOD”) , usually with quite moderate performance.After the recognition that it was not the right way, the industry has started toinvestigate mechanisms and biodegradation pathways of main industrial pollutants.We have started in the seventies with scientific studies on pollutant biodegradation and bioprocess optimization, as well as with design of innovative bio-treatment technologies for several industries, like∙Chemistry, agrochemistry and pharmaceuticals,∙Fermentation industries (yeasts, antibiotics, enzymes)∙Petrochemistry and refineries,∙Coal conversion technologies (coking plants, coal gasification)∙Pulp and paper, textile and at least∙Food and beverages: sugar mills, breweries, etc.FACTORS OF SUCCESSFULL BIODEGRADATIONSummarizing our experiences gathered in numerous studies on different pollutants andeffluent streams, a successful degradation of defined pollutants depend primarily onseveral essential factors:Chemical structure of pollutants –organic acids, alcohols, aldehydes, amines areeasily degradable,while pollutants containing two or more substitutes in their molecule(methyl-, halogene- or nitro groups) show remarkably slower degradability. Structuremay decrease solubility, respective bioavailability of the molecule, hindering microbialattacks, but also inhibiting the degradation process.Waste water matrix- concentration and quality of all organic and inorganic pollutants doinfluence composition of special biomass placed in sludge flocs, while increasingsalinity lowers food uptake of biomass.Microbial strains ,primarily mixtures of single strains relevant for degradation of certainpollutants must be present in required quantity in the bioreactor. They show often slowgrowth rates and week flocculation, resulting in their wash-out from bioreactor and inunstable bioprocesses.Milieu conditions - pH, temperature, aeration, redox potential, etc. are also essential formicrobial activities, which can be achieved by optimized bioreactors.Applying methods of modern biotechnology even “non degradable” pollutants can bedegraded biologically both in laboratory and also in practice.Immobilisation of biomass Retention and protection of relevant active microbial strains is essential for the stabilization and performance of the bioprocess.In the past several efforts had been undertaken, focused primarily on increase ofsludge concentration within the reactor by immobilization, microbial colonization ofsolid surfaces placed inside of the bioreactor under building of biofilms,cell agglomerates up to 20 time resistant against disturbing, inhibitory effects than suspended single cells.For long time the offered surface was the main factor of carrier efficiency, however later investigations pointed at significant importance of some other factors, especially in thebio-treatment of industrial effluents. Our R&D project on biofilm technologies we have started with tests for designingnew, optimized biocarriers, by defining attributes of ideal carriers and their effects(Tab. 1).Due to test results, the best retention of specialized biomass in bioreactor and theirprotection from toxic, inhibitory effects has been achieved by fixation of microbial cellson adsorbing, porous carrier, generating highly active biofilms resistant to inhibitorsand enabling stable processes (Fig. 2+3). Positive effects of this method have beenproven by adequate biotests under aerobic and anaerobic conditions.LEVAPOR carrier comprise of flexible, porous polymeric foams, coated with surfaceactive, adsorbent pigments, giving the material new attributes, essential for theirpractical application, completed with a final dimensions and shape of the product,optimized for an energy saving aeration and fluidization.ATTRIBUTE EFFECT1. High adsorbing capacity - binding toxic pollutants- fast colonisation+biofilm- fast startup at high level2. Porosity, high inner surface - protection of the biofilm(high biomass content) - high space-time-yields3. Fast wetting - homogene fluidisation4. Water binding - mass transport, bioactivity5. Proper fluidisation - lower energy consumption for reactor agitationTab. 1. Requests on ideal biocarriersFig.2. LEVAPOR-carrier , 20x20x7 mm delivery formFig.3 LEVAPOR-carrier: cross section (left) and colonised by biofilm of anaerobic bacteriaATTRIBUTES AND EFFECTS OF LEVAPOR ON BIOPROCESSES At least a synthetic carrier with following attributes was proven as the optimal one:ATTRIBUTE LEVAPORDimensionsSurfacePorosityWetting timeWater uptakeIonic chargeMicrobial colonisation time Recommended degree of reactor filling Full fluidisation gas upflow velocity Carrier retentionRecommended aerationExcess sludge removal - 20x20x7 mm- > 20.000 m²/m³- 90 to 95 %- immediately / 1- 2 days - up to 250 %- + to -- within 120 min.- 12 to 15 vol. %- 5 to 7 (m³/m²x h)- via 8-10 mm sieves- fine bubble aeration preferred- by fluidizationTab. 2. Physico-chemical properties of LEVAPOR carrierBy coating with up to 50% of powdered activated carbon, physico-chemical attributesof PUR foam cubes were changed significantly, their hydrophilicity, adsorbingcapacity, water uptake and density increased (Tab. 2.) enabling them better propertiesduring their application. The performance of biofilms fixed on LEVAPOR-biocarrier has been investigated atseveral laboratories under aerobic, as well as anaerobic conditions, using primarilyquite “problematic” substrates.1000 mg/L (7,8 mMol) of toxic 2-Chloroaniline (2-CA) underwas carried out in parallel batch tests (Fig.4) . LEVAPOR led to adsorption of 2-CA on carrier surface and reduced its concentration(and toxicity) in liquid phase within 2 hours to 3,2 mM, enabling start and a quantitative biodegradation within 240 hrs of 2-CA including also the adsorbed fraction, indicatedby release of Cl- ions.Due to high adsorbing capacity and porosity of LEVAPOR carrier∙hazardous, inhibiting pollutants became adsorbed on carrier surface,resulting in remarkably lower inhibitory effects in the liquid phase and∙faster microbial colonisation and generation of active biofilm takes place,resulting in∙higher resistance of microbial cells in biofilm against toxic effects, ∙higher process performance; degradation of adsorbed pollutants and∙biological regeneration of adsorbing capacity of LEVAPOR (fig. 4).suspended and on LEVAPOR fixed microorganisms 1( 1Prof.Streichsbier, et al., University of Vienna, Austria)NITRIFICATION,the key reaction of nutrient removal process is often unstable, because of ∙Slow growth and low cell yield of nitrifying microorganisms, allowing their wash-out of the bioreactor and∙Their remarkable sensitivity to- changes of pH, temperature and salinity, respectively- organic and inorganic inhibitors, resulting in reversible orirreversible inhibition of the process.Due to their high adsorbing capacity and porosity, LEVAPOR carrier do support nitrification by two parallel mechanisms:∙Fast microbial colonisation and biofilm generation result in - higher resistance against inhibiting effects and- higher process performance, while their∙High adsorbing capacity does reduce the inhibiting effect and enables a fast biodegradation of inhibitors.Nitrification of industrial effluentsmay be problematic, because of inhibitory effects of several organic pollutants and salinity fluctuations. Increase in salinity results in decreased uptake of organic pollutants and especially nitrogene, meaning lower degrees of COD- and N-elimination. Presence of even low concentrations of special inhibitors results often in a crash of nitrification process even under continued non inhibited COD-removal.Via immobilisation of nitrifying biomass, negative effects of inhibitors can be reduced remarkably (Fig. 5, right: 94,5 % nitrification, versus only 28% achieved by suspended biomass, left). Both, higher resistance and higher number of microbial cells fixed on carrier do contribute to stability of the process.Fig.5 : Effect of biomass immobilisation on nitrification of saline and inhibiting chemical effluents (salinity:20-25 g/L,COD~1600mg/L) at Lv~ 0,25gN/Lxd.Nitrification of municipal sewageNitrifying bacteria are growing and sedimenting slowly, flocculating weakly and not tending to be integrated into sludge flocs, resulting often their wash-out from the aerated basin and respective basins with long retention times or their remaining there. Nevertheless, in a field test in Finnland it has been proven, that by adding 12 vol.% of LEVAPOR into a basin designed for BOD-removal, within 3 weeks a stable nitrification has been established at low temperatures (Fig. 6.)Fig. 6. Establishment of nitrification within 4 weeks in winter in afluidized bed reactor upgraded with 12 vol.% LEVAPOR20719514910suspended biomassimmobilised biomassinletoutlet28 %94,9 %Simultaneous denitrification under aerobic conditionsAs result of high porosity and inner surface of LEVAPOR carrier as well as lower redoxpotentials inside the cubes, during the nitrification in presence of LEVAPOR, usually a simultaneous aerobic denitrification appears (Fig. 7), typical primarly for porous carrierlike LEVAPOR.Fig.7 Outlet-NH4N and -NO3N during the nitrification of sewage (lab test) Those results have been reproduced and confirmed also in a full scale municipal plantusing LEVAPOR biocarrier (Fig. 8)Fig. 8 Simultaneous nitrogen removal in the NINGAN (North-East-China) full scale plant, Dec. 2012 - Nov. 2013Biodegradation of industrial pollutants under anaerobic conditionsSimilar positive effects of LEVAPOR have been confirmed also in biotests under anaerobic conditions, for degradation of 2-Chlorobenzoic acid (2-CBA), a quite strong biocide, using methane production as indicator of degradation. While non-modified-PU-foam or sinterglass carrier showed only small effects with slow generation of methane, achieved the anaerobic reactor with LEVAPOR within few days after startup a remarkable biogas production, completed within 18 to 20 days(fig. 9).Fig. 9 Effect of carrier type on biodegradation of 2-Chlorobenzoic acidunder anaerobic conditionsAnaerobic- aerobic treatment of toxic pulp mill effluentsDue to the generation and enrichment of toxic intermediates in the medium under aerobic conditions, biotreatment of several complex organic pollutants by activated sludge method shows only moderate results, while anaerobic treatment achieves remarkably better results.Aerobic treatment of pulp mill bleaching effluents containing toxic chloroorganic pollutants, achieved only 35 to 40 % COD removal, however anaerobic biofilms fixed on adsorbing, porous carrier 65 to 70 % (Fig. 10)and due to a remarkable conversion of pollutants, further 45 to 60 % of the residual COD has been removed in the following aerobic post-treatment step. Thanks application of 12 vol.% adsorbent carriers in anaerobic reactors, their total volume could be reduced from the initially planned 65.000 m³ (UASB-system) to only 18.000 m³ for the biotreatment of 10.000 m³ toxic pulp bleaching effluent, loaded with 45.000 kg/d COD (Fig. 11).Regarding LEVAPOR applications so far, the addition of 12 to 15 vol.% carrier into the bioreactor resulted in average in a doubling of the plant performance, a higher process stability and a lower excess sludge generation.Fig. 10. Anaerobic treatment of toxic pulp mill bleaching effluents by biofilms fixed on different carrier material: 1. LEVAPOR 2. Activated carbon3. PU-foam and4. suspended biomass as controlFig. 11 Biotreatment plant for toxic pulp mill effluents by LEVAPOR technology DESIGN OF LEVAPOR SUPPORTED BIOTREATMENT PLANTSThe BIOREACTOR DESIGN comprises ofREACTOR LAYOUT - basing on volumetric loading ratesCARRIER RETENTIONAERATION AND AGITATION andSLUDGE SEPARATIONThe PLANT DESIGN starts with the LAYOUT of BIOREACTORS resp. their VOLUMESbased on biokinetic data of a given process, determineda) via practice oriented continuous lab, or on-line pilot tests , carried out direct atproduction site (recommended especially for industrial effluent treatment plants)and/orb) on basis of results obtained in the treatment of similar effluents and sewage. Provider of plastic carrier, recommend process design on basis of the surface loading of carrier materials.However, due to the high surface and porosity, as well as adsorbing capacity, for LEVAPOR other, practice relevant parameter should be taken in account :AERATION OF FLUIDISED BED BIOREACTORSTarget: oxygene supply for microorganisms andagitation of the medium, achieving masstransfer of O2+pollutants to biofilm.Recommended type of aeration for LEVAPOR carrier1. Recommended is fine bubble aeration , via1.1. Porous, flexible membranes (discs or pipes, fig. 11)1.2. Ejectors : until 6-8 m water depth and1.3. Injectors : up to 15 -20 m water depth2. Surface aerators - carrier cubes should be put inadequate cage with 10 mm meshfor protection of mechanical damage.Fig. 11 Membrane disc aeratorsIn the full scale plant in Finnland the fluidising behaviour of colonised carriers in the reactor was studied by determining the carrier density (cubes/L) in the reactor as a function of air flow . Carrier density was determined three times, approximately once a month and all tests gave similar results. The highest density as a function of air flow was found at 6 to 7 m³ / m² basin surface per hour, however the density measurements were made only from samples taken from the water surface, so any possible density gradient toward the bottom could not be perceived. When the air flow per basin area fell below 4 m³/m² x h , carrier density began to drop substantially.Fig. 12 Effect of aeration density on fluidization of colonized carrier:In municipal plants aeration for pollutant removal is enough! RETENTION OF THE CARRIERThe LEVAPOR biofilm process uses cubes of 20 * 20 * 7 mm size , which has been chosen to enable their easy retention in the reactor. The simplest separation method of colonized carrier cubes from the treated wastewater-cell-suspension is their filtration through a screen with 8 to 10 mm mesh openings or through adequate strainer, however at upgrading of existing plants their design and dimensions must be adapted to the design of available basins.Basic principle - in order to avoid clogging of the separating surface, it is important to choose flow velocities through the filter area remarkable lower than through the outlet pipe , meaning to design a remarkable higher filter area ( 3 to 5 x >) than the cross section of the outlet pipe.Materials – with regard to eventually corrosive wastewater, carrier separator should be made of non corroding materials, like stainless steel or adequate plastic materials. Forms – there are three main types,∙screen plates installed at inner wall side of a longitudinal b,asins∙screen baskets (like a half wastepaper basket) for round reactors and∙perforated pipes , installed in the mid or at inner side of round, rectangular, but also longitudinal basins.Fig. 13. Possible carrier retention in cylindrical and longitudinal reactorGENERATION AND SEPARATION OF EXCESS SLUDGEDue to the longer sludge retention times (“sludge age”) , respectively longer oxidationtimes, biofilm systems generate usually lower quantities of compact excess sludge.The removal of excess sludge from the carrier surface occurs via fluidisation of thecarrier bed, because only living cells are able to be integrated into the biofilm structure,while dead and excess sludge cells will be released spontaneously from the biofilm.The cells released from the carrier surface leave the reactor through the screen andoverflow, arriving to the clarifier, where they will settle in several types of usualgravitational separation devices, like conic, longitudinal or pipe shaped clarifiers, etc. PROCESS ECONOMYThe main target of every biotreatment process is the highest possible removal ofpollutants at lowest possible costs, what can be achieved by application of new, highlyefficient processes with low capital and operation expenses, especially via- high space-time-yields- high process stability- low energy consumption- minimized generation of secondary products (excess sludge) and- low investment costs and- low maintenance costs.Most of the mentioned advantages can be reached by biofilm technologies, especiallyby using LEVAPOR biocarrier. Following casa histories will confirm this advantages:a. Anaerobic-aerobic treatment of toxic pulp mill bleachning effluents in GermanyThe originally proposed aerobic treatment achived only 35 to 40% COD-removal,because of generation of inhibitory metabolites, while the anaerobic process achieved60 to 75%,plus ca.50% removal of residual COD in the aerobic posttreatment step.For the anaerobic treatment of a daily load of 45 tons COD, UASB reactors of 65.000 m³have been offered, using LEVAPOR carrier this volume has been reduced to 18.000 m³,meaning 47.000 m³ less anaerobic volume !b. Upgrade of a municipal sewage treatment plant (STP) for nitrification (Finnland)In a sewage treatment plant designed for BOD removal, years later nitrification wasrequired. Instead of usually practicised doubling of reactor volume, into the aerobicbasin 12 vol.% LEVAPOR carrier were added. Within 3 weeks a stable nitrification hasbeen established, enabling significant cost savings ( investments of 75 EURO/m³ forLEVAPOR, instead of 300 EURO/m³ of aerated basin, complete) but also time savings.c. Municipal sewage treatment plant with higher loading rates (China)Based on above described experiences, in China a new STP for 22.000 m³/d sewagewas designed with only 3,8 hrs. hydraulic retention time in the aerated basin.The plantachieves ca. 90% COD, BOD and NH4N+ removal, denitrifying further under aerobicconditions ca. 50 to 60% of the generated NO3N.d. Significantly lower LEVAPOR fillingDue to high active surface and adsorption capacity, the required reactor filling of LEVAPOR carrier is in the range of only 12 to 15 vol.%, compared with 40 to 65 % for plastic carriers, meaning significant economic advantages over them.Additionally to lower expenses for carrier material and their shipment costs, application of LEVAPOR biocarrier results also further advantages, like lower energy consumption for agitation and aeration.Our experiences in biotreatment of complex, industrial effluents include ∙Petrochemistry∙Chemistry and pharmaceuticals∙Pulp and paper∙Landfill leachates∙Steel works, coal gasification, coke plants, etc∙Textile and leather industryOur services for youwe do offer also our services in designing taylor made problem solutions,based on 40 years experiences on biofilm technologies and nutrient removal, both in the field of science and in the practice. Our tools are:∙Analysis of the problem∙Elaboration of alternatives for problem solution , supported by∙Practice oriented biotests (especially for nitrification),∙Process Design and/or Engineering∙Production and delivery of the required LEVAPOR type and∙Plant startup using optimized mixed biomass, enriched with microbes essential for degradation.。

1 Introduction教学目的: List six different property classifications of materials that determine their applicability. Cite the four components that are involved in the design, production and utilization of materials, and briefly describe the interrelationship between these components.教学重点: The four components that are involved in the design, production and utilization of materials教学难点: The discipline of materials science involves investigating the relationships that exist between the structure and properties of materials.教学方法:Multimedia学时分配1.1Historical Perspective10 min1.2Materials science and engineering 25 min1.3Why Study Materials Science and Engineering 10 min1.4Classification of Materials 35 min1.5 Modern Material‟s Needs 10 min教学过程及主要内容：1. Historical PerspectiveWebster编者“New International Dictionary（1971年）”中关于材料（Materials）的定义为：材料是指用来制造某些有形物体（如：机械、工具、建材、织物等的整体或部分）的基本物质（如金属、木料、塑料、纤维等）迈尔《新百科全书》中材料的含义：材料是从原材料中取得的，为生产半成品、工件、部件和成品的初始物料，如金属、石块、木料、皮革、塑料、纸、天然纤维和化学纤维等等。

APPLIED MATERIALS®Best Known Methodology forPlasma Enhanced TEOS USGPrecision 5000 DCVD XP™PE TEOS USGDielectric CVD DivisionPUBLICATION HISTORYRevision:ADate:August 1995Cleanroom Part Number:0230-09391Standard Part Number:0230-093903050 Bowers AvenueSanta Clara, CA 95054____________U.S. and Foreign Patents Pending©Applied Materials, Inc., 19953050 Bowers AvenueSanta Clara, California 95054All rights reserved. No part of this book may be reproduced in any form without written permission from Applied Materials, Inc.TABLE OF CONTENTSSECTION DESCRIPTION PAGE 1INTRODUCTION12HARDWARE DESCRIPTION3SYSTEM HARDWARE DESCRIPTION5 2.115-Slot Storage Elevator5 2.2Ergonomic Cassette Loader6 2.3Loadlock Cover Lifter6 2.4Wafer Position Sensor7 2.5Synergy Board Assembly9CHAMBER HARDWARE DESCRIPTION10 2.6Plenum Pumping Plate10 2.7Sapphire Viewport Window10 2.8Chamber Clean Endpoint Detector11 2.9Universal Slit Valve11 2.10T1SABB Susceptor11 2.11Teflon Plugs11 2.12Metal Seal Mass Flow Controllers (MFCs)123THE PRECISION LIQUID INJECT SYSTEM13 3.1Conceptual Description13 3.1.1TEOS Injection Control Valve and Liquid Flow Meter (LFM)15 3.1.2Helium Carrier MFC16 3.1.3Dual Tank Liquid Refill System (DTLRs)16 3.1.4Liquid Injection Remote Controller18 3.2Operations and Programming19 3.2.1System Configuration Screen19 3.2.2Gas Name Configuration20 3.2.3Configuring Remote Gases21 3.2.4Remote I/O Screen22 3.2.5Liquid Flow Calibration Setting23 3.2.6Sensors and Interlocks25SECTION DESCRIPTION PAGE4PROCESS DESCRIPTION (Description of BKMs)27 4.1Single-Step Clean27 4.1.1Hardware Requirements27 4.1.2Recipe27 4.1.3Clean Times38 4.2Periodic Single-Step Clean with Endpoint Detection39 4.2.1Recipe Set-up39 4.2.2Sequence Set-up42 4.2.3Chamber Configuration44 4.2.4Periodic Clean Frequency45 4.3Standard TEOS Process Recipes455PROCESS BURN-IN RESULTS53 5.1PE TEOS Burn-in53 5.1.1Experimental Procedure53 5.1.2Results54 5.2Periodic Single-Step Clean Burn-in57 5.2.1Results58 5.2.2Endpoint Data586SOFTWARE59 6.1Software Features59 6.2System Configuration Screens597APPENDIX63 7.1Wet Cleaning Procedure for DCVD TEOS63 7.2DCVD IMD/PMD Chamber Clean Endpoint DetectorOperators Manual74 7.3Part Number and ECO Release Statusof xP Hardware Features85 7.4Universal Slit Valve Installation Procedures86PRECISION 5000 DIELECTRIC CVD xPBEST KNOWN METHODOLOGY1INTRODUCTIONThe Precision 5000 Dielectric CVD (DCVD) 200mm and 150mm xP systems have beendeveloped to reduce the cost of ownership for all plasma TEOS processes by reducing costof consumables, reducing gas costs, and increasing wafer throughput. This high perform-ance system was made possible as a result of several mainframe and chamber hardwareimprovements as well as process and clean developments. This Best Known Methodology(BKM) manual was created to give the user a brief explanation of the hardware, software,and process that comprise the xP system and how they are synergistically used in increas-ing productivity and performance of the Precision 5000. It must be noted that this is not asystem manual and as such does not go in detail on any of the hardware and process fea-tures nor does it cover in detail trouble shooting methods of the Precision 5000. It shouldbe considered as a quick reference manual for all of the xP hardware and process features.The ship kit that comes with the Precision 5000 xP system will have all the individualmanuals for the hardware features and also the system manual for the entire Precision 5000.Chapter 2 contains brief functional descriptions of new mainframe and chamber hardwarefor xP systems. Figures are included where deemed necessary. The system constants andthe system configuration screen for these hardware (where applicable) have also beenincluded. As mentioned before, these are brief descriptions only. However, part numbersof various reference material that provide more detailed descriptions of the xP hardware areincluded in the event that more information is desired.Chapter 3 describes the Precision Liquid Injection System™ (PLIS), the single most compli-cated hardware enhancement of the Precision 5000 xP system. Due to its complexity, thischapter is devoted to conceptual description of the PLIS hardware and includes some detailson the system configuration. Again, other reference material (PLIS manuals and video) thatprovide detailed installation and operation procedures are identified.Chapter 4 contains descriptions of process improvements recommended for the xP system.This includes the Single-Step Chamber Clean, as well as PE TEOS and ∆MF TEOS deposi-tion recipes for the PLIS TEOS delivery system. The methodology for implementing thePeriodic Single-Step Clean is also described in this chapter. Chapter 5 describes the resultsof two 1000 wafer burn-ins that utilized these recipes. Deposition rate, uniformity, particleperformance, and endpoint data are included.The software used with the xP system is version 3.10. Chapter 6 provides information on some of the new features that 3.10 software accommodates, as well as print-outs of system configuration screens that are recommended for the xP systemChapter 7 describes the recommended wet clean and Preventative Maintenance (PM) proce-dure for TEOS chambers. Also included is the operations manual for the optical endpoint detector. Finally, part numbers and ECO numbers for each xP feature are included in this chapter.2HARDWARE DESCRIPTIONThe following table is a list of all the novel hardware features on the Precision 5000 DVCDxP system. Some of the xP hardware features have become standard on current systems orwill become in the near future. Following this table will be a brief description of the systemand chamber hardware (except PLIS which will be described in a separate chapter). Thesedescriptions are brief and meant for general familiarity on part of the process engineer; thereader is referred to the original manuals for detailed installation and functional procedures.Mainframe HardwarePart Quantity PartDescription Size Needed Number15-Slot Storage Elevator200mm 1 per system0240-71220150mm 1 per system0240-71218 Precision Liquid Injection System200mm 1 per system0290-09493150mm 1 per system0290-09374 Ergonomic Cassette Loader200mm 1 per system (option)0240-76281150mm Not availableLoadlock Lid Lifter200mm 1 per system (option)0240-32006(with WPS)150mm 1 per system (option)Same as 8"Loadlock Lid Lifter200mm 1 per system (option)0240-31232(without WPS)150mm 1 per system (option)Same as 8"Wafer Position Sensor200mm 1 per system0240-31153150mm Not availableSynergy Board Assembly200mm 1 per system0240-76126150mm 1 per system Same as 8"Chamber HardwarePart Quantity Part Description Size Needed Number Plenum TEOS Pumping Plate200mm 1 per chamber0190-09263150mm 1 per chamber0190-09269 Sapphire Viewport Window200mm 1 per chamber0240-31299150mm 1 per chamber Same as 8" Teflon Plugs200mm 6 per chamber0020-32122150mm Not availableT1SABB Susceptor200mm 1 per chamber0010-10036200/150mm 1 per chamber0010-10632150mm 1 per chamber0010-60015 Universal Slit Valve (type “s” )200mm 1 per chamber0010-10265150mm 1 per chamber Same as 8" Chamber Clean Endpoint Detector200mm 1 per chamber0190-09454 (for Dual Spring Throttle Valve)150mm 1 per chamber Same as 8"Chamber Clean Endpoint Detector200mm 1 per chamber0190-09471 (for Down Stream Throttle Valve)150mm 1 per chamber Same as 8" Metal Seal MFCs200mm Per gas Per gas150mm Per gas Per gasSYSTEM HARDWARE DESCRIPTION2.115-Slot Storage Elevator (200mm or 150mm)The 15 slot elevator increases the wafer throughput of the process by allowing the loadingof up to 15 wafers in the elevator. When used in conjunction with the Periodic Single-StepClean (see section 5), throughput can be increased up to 35% for 1µm PE TEOS depositionprocesses when compared to an 8-slot elevator. The assembly and operating instructionsare discussed in the operating manual for the 15-slot elevator (ECO# 3850). Figures 2-1and 2-2 show the system configuration screen and control handler screen for installing the15-slot storage elevator. DCVD is NOT recommending the use of the orienter. This fea-ture is not necessary and causes a decrease in throughput. Thus, the “Upper LL Orienter”is absent in Figure 2-1.Figure 2-1.System Configuration Screen for 15-Slot ElevatorFigure 2-2.Control Handler Screen Setting for 15-Slot Elevator2.2Ergonomic Cassette Loader (200mm only)The Ergonomic Cassette Loader helps reduce the chance of wrist injury during the place-ment of cassettes into the loader by having a horizontal receiving shelf which takes thecassette and automatically rotates it to the vertical position. The current cassette loaderrequires an ulnar deviation of 45 degrees. With the ergonomic cassette loader this deviationis reduced to 10 degrees. For more information, please refer to ECO #10259.2.3Loadlock Cover Lifter (200mm or 150mm)This is a spring loaded mechanism (as shown in Figure 2-3) which will enable the operatorto lift the loadlock cover with considerable ease. The loadlock cover typically weighs 30pounds, but with the aid of the lifter, an operator can lift the cover and move it at ease whileexerting a force of less than one pound. The user is referred to the installation manual(ECO #P6657) for installation and operational instructions.2.4Wafer Position Sensor (200mm only)The purpose of the Wafer Position Sensor (WPS) is to greatly minimize the number ofimproperly positioned wafers in the storage elevator that eventually may break duringnormal movement of the elevator. The WPS detects when the wafer is improperly posi-tioned in the blade pocket during wafer transfer from a chamber to the storage elevator, andcorrectly places the wafer in the elevator. This is done by two visible light transmitter/receivers (sensors mounted on the loadlock cover) and two reflectors arranged symmetri-cally around the robot’s extension centerline which determine the wafer position andcompares it with stored, calibrated wafer positions based on two sets of pre-programmedsystem constants. All corrections made by the WPS are reported to the event log. This canbe used as early detection of potential handling problems. For detailed functional descrip-tion please refer to the Wafer Position Sensor manual, part #0230-09265.The Wafer Position Sensor should be configured as follows. On the system configurationscreen, enable “Wafer Position Sensors,” “Single Sensor Run,” and “Position Error Correc-tion,” as shown in Figure 2-4.Figure 2-4.System Configuration ScreenTwo sets of four system constants represent the average extension step counts at which each beam would be eclipsed and then uncovered by a correctly positioned wafer. The first set are for wafers rotated from chambers A and C, and the other set of four are from cham-bers B and D. These averages are taken over two ten-cycle (a cycle occurs when the robot arm moves a wafer from the back position towards the storage elevator) sequences for wa-fers coming from each side of the chamber. Wafer positioning offsets are determined rela-tive to these constants represented in Figure 2-5 (system constants 2177 to 2184).Figure 2-5.System Constants Screen for Wafer Position Sensor2.5Synergy Board Assembly (200mm or 150mm)This is a printed circuit board which accelerates the operation of the computer controllingthe operation of the Precision 5000. The synergy board is standard on all systems and isnecessary for running 3.10 software. The user is referred to ECO # X1495 for furtherdetails on its installation and operation.CHAMBER HARDWARE DESCRIPTION2.6Plenum Pumping Plate (200mm or 150mm)The novel design of this pumping plate allows for more even distribution of the clean gases.As a result, the chamber clean process is more effective and efficient (faster), and hencereduces the cost of consumables and increases the wafer throughput. For 200mm systems,this pumping plate is required for implementation of the 4 Torr Single-Step Clean usingNF3 and was specifically developed for this purpose. For 150mm systems, there are twodifferent C2F6 Single-Step Clean recipes. One incorporates NF3 while the other one onlyutilizes C2F6 and O2. The 150mm Plenum Pumping Plate is required for the clean withoutNF3. Further details of the Single-Step Clean recipes are contained in Chapter 4. Theuser is referred to ECO #A5474 for details on the design and assembly of the PlenumPumping Plate.Figure 2-6.Plenum Pumping Plate2.7Sapphire Viewport Window (200mm or 150mm)Replacement of the viewport windows has virtually been eliminated by the switch fromquartz windows to sapphire windows. Sapphire (Al2O3) is inherently more resistant to etch-ing by NF3 plasma than quartz (crystalline SiO2). As a result, the ability to monitor opticalsignals from the plasma (such as those for clean endpoint detection) becomes possible with-out attenuation from the window. This feature has now become a standard on all Precision5000 DCVD systems. The PIK kit for the new window also includes 2 Chemraz O-ringsand 1 UV filter.2.8Chamber Clean Endpoint Detector (200mm or 150mm)The endpoint detector is an optical device which monitors the fluorine concentration duringthe chamber clean process and outputs a 0–10 volt signal to the laser port. Endpointing ofthe clean occurs when an increase in the fluorine signal (caused by the nonconsumption offluorine after etching of oxide is complete) is detected. The detector can be used in con-junction with the software to call endpoint rather than using the traditional timed clean.This will reduce gas usage and clean time, therefore increasing throughput and consumablelifetime. The installation and operational instructions of the endpoint detector with respectto the Single-Step Clean process is described in Chapter 5. Further, an operating manualfor the optical endpoint detector is included in the Appendix.2.9Universal Slit Valve (200mm or 150mm)This slit valve has several new features which essentially eliminate slit valve failures due todoors failing to open and also helps reduce particle contamination. This was accomplishedby redesigning the actuator, adding novel “Quick release” hinges for smooth opening andclosing of the door, and implementing Chemraz 513 O-rings for better sealing. Installationand operating procedures are described in the parent ECO for the slit valve (ECO #P6775).In addition, more information is included in the Appendix.2.10T1SABB Susceptors (200mm or 150mm)These are thin plate TEOS susceptors that are bead blasted prior to anodization. Bead blast-ing the susceptor results in the formation of a fairly large compressive stress at the surfacethat decreases in magnitude away from the surface. This stress is enough to cause plasticdeformation and results in the surface being undulated. During subsequent exposure of theanodized surface to the high temperatures in the process chamber, the compressive stress atthe bead blasted surface leads to a smooth transition from tensile to compressive stress inthe bulk aluminum substrate and thus the interface is protected from premature crackingand the lifetime of the susceptor is considerably enhanced. Furthermore, the rough surfaceprevents sticking of the wafer to the susceptor through reduction of surface area in contactwith the wafer.2. 11Teflon Plugs (200mm only)The purpose of the teflon plugs is to extend the lifetime of the faceplates. They are insertedin the faceplate screw holes over the screws. By covering up the screws and shielding themfrom the plasma, the plugs prevent localized arcing in this screw hole area. The plugs arealso designed to ensure more careful installation of the faceplate. The screws need to becentered in the faceplate holes or the teflon plugs will not fit over the screws. If the plugsdo not fit easily over the screws, DO NOT use extra force to jam them in!! The screwsmust be loosened and adjusted so that they are centered in the faceplate holes.2.12Metal Seal Mass Flow Controllers (MFCs) (200mm or 150mm)Metal Seal MFCs for all the gases and sizes required for the current Precision 5000 gasProcess Gas Calibration Cal. Factor MFC sizes Metal Seal MFCGas(Applied part #) O3 in O2N20.9815,000 sccm3030-02851O3 in O2N20.98110,000 sccm3030-02852C2F6C2F6 (SF6) 1.000 (.895) 500 sccm3030-02846C2F6C2F6 1.0001,000 sccm3030-02847C2F6C2F6 1.0003,000 sccm3030-02848C2F6C2F6 1.0005,000 sccm3030-02777O2 (Des.)O2 1.0001,000 sccm3030-02853O2 (Des.)O2 1.0005,000 sccm 3030-02854O2 (Des.)O2 1.00010,000 sccm 3030-02855O2N20.994500 sccm3030-02849O2N20.9941,000 sccm3030-02850O2N20.9943,000 sccm3030-01953NF3CHF30.958100 sccm3030-02845NF3CHF30.958500 sccm3030-01924NF3CHF30.9581,000 sccm3030-02275N2N2 1.000300 sccm3030-01877N2N2 1.0001,000 sccm3030-01946N2N2 1.0005,000 sccm3030-01882He (VIU)*He 1.0001,000 sccm3030-01889He (VIU)He 1.0002,000 sccm3030-01962He (VIU)He 1.0003,000 sccm3030-01963He (VIU)He 1.0005,000 sccm3030-01964He (VIU)He 1.0006,000 sccm3030-01965He (VIU)He 1.00010,000 sccm3030-01894He (HUD)He 1.0001,500 sccm3030-01961He (HUD)He 1.0002,000 sccm3030-01962He (HUD)He 1.0003,000 sccm3030-01963He (HUD)He 1.0005,000 sccm3030-01964He (HUD)*He 1.0006,000 sccm3030-01965TMB/TMPi SF60.625/.56510 sccm3030-01955TMB SF60.62520 sccm3030-01956TMB SF60.62530 sccm3030-01957TMB SF60.62540 sccm3030-01958TMB SF60.625100 sccm3030-01959TMB SF60.625300 sccm3030-01960* VIU - Vertical Inlet Up configuration** HUD - Horizontal Upside Down configuration (used with PLIS)3(PLIS), a key xP feature. A brief description of the concept behind liquid injection is given,followed by a description of the PLIS hardware and the operation of a Precision 5000 with aPLIS TEOS delivery system. For more detailed information on the PLIS, refer to the PLIS3.1Conceptual DescriptionThe central feature of PLIS is a heated injection control valve that converts TEOS from aliquid state (at room temperature) to a vaporized state (as shown in the block diagramFigures 3-1 and 3-2). This injection valve, which is heated to between 120°C and 150°C,controls the liquid TEOS flow with feedback from the Liquid Flow Meter (LFM, Figures3-1 and 3-2), and provides the pressure drop for vaporization. The TEOS vaporizes and acarrier gas such as helium (pressurized between 20–30 psi) transports them to the chambervia a 1/2" heated gas line. The LFM and injection control valve and temperature controllerare the main differentiating features of the Precision Liquid Injection System from the HotBox Bubbler TEOS delivery system.sccm for PE TEOS and ∆MF processes. The auxiliary gas line is heated to between 70°C and120°C and delivers TEOS and helium vapor to the chamber. Because temperature is criticalchamber.line purge valve (Figure 3-2)2provides for a chamber vent option, independent of the loadlock, and purges the line whenthe chamber is vented. A needle valve, upstream from the N2 final valve, regulates the N2purge flow. The flow of N2 prevents moisture from getting into the TEOS line when the3-2). This bypass valve is not necessary for PE TEOS and ∆MF TEOS applications. (It isused for SACVD BPSG processes.) The “Chamber Bypass Valve” should be “Absent” onthe Chamber Configuration Screen (see Figure 4-8). Also, the air lines for the bypass valveshould be pulled off for all xP chambers.Figure 3-1.Block Diagram for PLIS SystemsFigure 3-2.Precision Liquid Injection System Gas Line ConfigurationThe four main functional units of the PLIS are the TEOS Liquid Flow Meter (LFM) andinjection control valve, helium Mass Flow Controller (MFC), the Dual Tank Liquid Refillsystem (DTLR) and the remote controller which controls the LFM and the injection controlvalve. Below is a brief description of these features.3.1.1TEOS Injection Control Valve and Liquid Flow Meter (LFM)The heated injection control valve controls and vaporizes the liquid TEOS. Its two compo-nents are described below (see Figure 3-3):•The shutoff valve that stops TEOS vapor flow, is an on-off valve. It does not stop helium flow.•The flow control valve controls the flow of liquid TEOS by variation of the gap (from a feedback from the LFM) and creates the pressure drop necessary for vaporization. It isheated by a closed-loop control system to prevent vapor recondensation.As required for process, the injection control valve controls liquid TEOS and the pressuredrop across the control valve vaporizes the liquid. The TEOS liquid flow rate, controlled bythe LFM, is typically 0.5 gm/min for PE processes. When the setpoint for liquid TEOSflow is given, the system sends the setpoint through the liquid injection remote controller tothe LFM. The LFM senses the flow of liquid and sends a control signal to the injection con-trol valve to control liquid TEOS flow.Figure 3-3.LFM and Injection Valve for PLIS3.1.2Helium Carrier MFCHelium carrier gas transports vaporized TEOS/dopants to the chamber. The carrier flowtypically used is from 550 sccm to 1200 sccm for plasma process.3.1.3Dual Tank Liquid Refill System (DTLR)A Dual Tank Liquid Refill system is required (see Figure 3-4) for reliable functioning of thePrecision Liquid Injection System. The Dual Tank Liquid Refill system ensures continuoussupply and availability of TEOS liquids, bubble and contamination free operation, and pre-vents pressure loss, an important requirement for liquid delivery.Figure 3-4.Dual Tank Refill System for PLISThe system consists of four main functional components.•Two five gallon canisters in a remote cabinet with a delivery or process side and supply or bulk side. The supply cannister side is designed with a pneumatic panel for use withan automatic purge controller for automated canister change procedures.•The automatic purge controller for automated supply canister changes.•An automatic supply refill controller to supervise and control the refill operation and to monitor the level for the bulk TEOS container.• A valve manifold assembly to pressurize and purge with helium.The following points describe the operation of the DTLR.•Under normal process operation, the process 5 gallon canister delivers TEOS to the Precision Liquid Injection System via conventional process connections. The canisterincorporates a four level sensor that communicates to the automatic supply refill con-troller. The TEOS level is maintained between the middle two levels, L2 (high, 63%) andL3 (low, 60%), by automatic refill operations of the refill controller. Levels L1 (high-high, 70%) and L4 (empty, 50%) should not be seen under normal conditions, and isprovided for fail safe operation.•During normal process, the supply refill controller will sense L3 and automatically open the refill control valve on the process side. If there is adequate bulk chemical supply therefill will be completed without interruption.•The supply canister incorporates a dual low level sensor for warning (20%) and empty (5%) levels. The status of the supply canister can be seen on the refill controller display.3.1.4Liquid Injection Remote ControllerA liquid injection remote controller controls the Precision Liquid Injection System. Theliquid injection remote controller links to the mainframe electronics through an RS232interface.When a process run begins, the controller is furnished with the TEOS setpoint and heliumsetpoint parameters. The controller sends the helium setpoint to the helium MFC and moni-tors the actual MFC flow. In addition, the controller monitors the liquid mass flow sensorsignal and triggers the control valve to quickly ramp TEOS flow to the desired setpoint.The controller compares the feedback signals from the control-valve-liquid-mass-flow sen-sor to the programmed setpoint, and adjusts the flow accordingly. This feedback is continu-ous and provides accurate real-time control of the TEOS mass flow rate.The liquid injection remote controller also provides the DO signals for valves to turn on andoff, and DIs for interlocks.3.2Operations and ProgrammingThis section describes operating procedures for Precision 5000 systems equipped with thePrecision Liquid Injection System. Where appropriate, the procedures are accompanied byscreen illustrations and tables describing fields on the screens.Special system software andan interface board are required to run the Precision Liquid Injection System. The followingtext describes operation requirements for the system. The following screens have beenchanged to support the Precision Liquid Injection System.3.2.1System Configuration ScreenThe System Configuration screen now includes the Expanded Remote Gas Panel and I/OCapabilities field. This feature must be toggled to “Present” to enable all TEOS screenchanges.DD-MMM-19YY Applied Materials Precision 5000-XXXX HH:MM:SSSystem Wafer ChamberA ChamberB ChamberC Control Program ServiceSystem Configuration ScreenChamber A:Present Type CVD Ozonator PresentChamber B:Present Type CVD Helium Wafer Cooling AbsentChamber C:Present Type CVD Remote Gas Panel PresentChamber D:Present EtchConfigure Heat ExchangerTwelve tooth pulley on the robot rotation drive: AbsentShow the cassette lot names on the control system screen: DisabledShow the SECS terminal services last 3 lines on the control screen: DisabledCryo pump based load chamber: AbsentExpanded remote gas panel and I/O capabilities: PresentExpanded gas panel and I/O capabilities PresentIndividual zero and gain for the LS temperature sensing: EnabledUnique sequence and recipe names: DisabledIBM line drawing character set on the printer: PresentPAGE 2Config Sequence Config Process Future Config Interlock Override Previous Figure 3-5.System Configuration Screen3.2.2Gas Name ConfigurationAll gases used on the Precision 5000 system must be entered on the Process Gas Source Names and Configuration screen. See Figure 3-6. The system does not recognize a gas until it is entered on this screen.DD-MMM-19YY Applied Materials Precision 5000-XXXX HH:MM:SSSystem Wafer ChamberA ChamberB ChamberC Chamber D ProgramServiceProcess Gas Source names and Configuration ScreenSource Cal needs Default Name Type purge?Current Chambers Correction Units Liq Temp> .03CVD GAS N A B -D 0.99 1 sccm > C2F6CVD GAS N RemA B -RemD 0.255> NF3CVD GAS N RemA B -RemD 1.0 1 sccm > O2CVD GAS N RemA B --0.994 1 sccm > N2CVD GAS N RemA B RemC RemD 1.0 1 sccm > HECVD GAS N RemA RemB -- 1.0 1 sccm > HE-SACVD CVD GAS N RemA RemB -- 1.0 1 sccm > N20CVD GAS N RemA B RemC RemD 0.734 1 sccm > AR CVD GAS N -B -RemD 1.0 1 sccm > TEPO CVD/P-DO LFCN RemA --- 1.0 1 mgm > SIH4CVD GAS N --RemC -0.364 1 sccm > B2H6CVD GAS N ---- 1.0 1 sccm > LF-RF CVD GAS N -B -- 1.0 1 sccm > CHF3ETCH GAS N ----0.528 1 sccm > CF4CVD GAS N -B RemC RemD 0.445 1 sccm > PH3CVD GAS N ---- 1.0 1 sccm > HE-GP CVD GAS N -B -- 1.0 1 sccm > NH3CVD GAS N --RemC - 1.0 1 sccm > TEB CVD/B-DO LFCN RemA --- 1.0 1 mgm > TEOSCVD/TEOS LFCN RemA RemB --1.01 mgmTouch > to add source name. Touch item to enter new value. Previous ScreenSOURCE TYPECVD/TEOS LFC CVD GAS CVD/B-DO LFC CVD LIQ.PURGE GAS ETCH GAS CVD/P-DO LFCETCH LIQ.Figure 3-6.Process Gas Source Names and Configuration Screen, and Source Type Pulldown1234567。

Atomic simulation of bcc niobium R 5h 001i 310f g grain boundaryunder shear deformationBo-Wen Huang a ,Jia-Xiang Shang a ,⇑,Zeng-Hui Liu a ,Yue Chen ba School of Materials Science and Engineering,Beihang University,Beijing 100191,People’s Republic of China bDepartment of Applied Physics and Applied Mathematics,Columbia University,New York,NY 10027,USAReceived 8March 2014;received in revised form 19May 2014;accepted 19May 2014Available online 1July 2014AbstractThe shear behaviors of grain boundaries are investigated using molecular dynamics simulations.The R 5h 001i 310f g symmetric tilt grain boundary (GB)of body-centered cubic (bcc)Nb is investigated and the simulations are conducted under a series of shear directions at a wide range of temperatures.The results show that the GB shearing along ½1 30 ,which is perpendicular to the tilt axis,has a coupled motion behavior.The coupling factor is predicted using Cahn’s model.The critical stress of the coupling motion is found to decreaseexponentially with increasing temperature.The GB under shear deformation along the ½001 direction,which is parallel to the tilt axis,has a pure sliding behavior at most of the temperatures investigated.The critical stress of sliding is found to be much larger than that of the coupled motion at the same temperature.At very low temperatures,pure sliding is not observed,and dislocation nucleating and extending is found on GBs.We observed mixed behaviors when the shear direction is between ½1 30 and ½00 1 .The transition region between GB coupled motion and pure sliding is determined.If the shear angles between the shear direction and the tilt axis are larger than a certain value,the GB has a coupled motion behavior similar to the ½1 30 direction.A GB with a shear angle smaller than the critical angle exhibits mixed mechanisms at low temperatures,such as dislocation,atomic shuffle and GB distortion,whereas for the ½00 1 -like GB pure sliding is the dominating mechanism at high temperatures.The stresses to activate the coupling and gliding motions are analyzed for shear deformations along different directions at various temperatures.Ó2014Acta Materialia Inc.Published by Elsevier Ltd.All rights reserved.Keywords:Grain boundary;Shear deformation;Molecular dynamics;Bcc1.IntroductionGrain boundaries (GBs)play a significant role in determining the mechanical properties of polycrystalline materials [1,2],e.g.nanocrack healing by migrating GBs [3].Numerous investigations have been conducted in order to understand GB structures,energies and thermodynamics.Molecular dynamics (MD)simulation is a powerful method,providing a comprehensive understanding of the microscopic mechanisms of GB movements [4–8],plasticdeformations [9,10]and other atomic behaviors [11–13].One of a GB’s most important features is its mobility,which depends on the GB crystallography and external conditions.It has been found that the normal GB motion is often coupled to the tangential translation of grains (referred to as coupled GB motion).Stress-induced GB motions have been studied in great detail,both in simulations and experimentally.GB motions can be classified into different groups based on analysis of the atomic structure evolution [14–16],which includes GB coupled motion,GB sliding,grain rotation and dislocation emission.GB coupled motion was first observed in experi-ments by Li et al.[17]in small-angle Zn GBs.Molteni and/10.1016/j.actamat.2014.05.0471359-6454/Ó2014Acta Materialia Inc.Published by Elsevier Ltd.All rights reserved.⇑Corresponding author.Tel./fax:+861082316500.E-mail address:shangjx@ (J.-X.Shang)./locate/actamatAvailable online at ScienceDirectActa Materialia 77(2014)258–268Shiga et al.investigated the tilt and twist GB motions in Ge,Al and Ni using density functional theory and found that the sliding and migration motions exhibit a stick–slip behavior[18,19].The Frank–Bilby equation defines the dislocation of an interface between two crystals.The solutions of this equa-tion are meaningful only for low-angle tilt GBs[20],though recently the equation has been extended to high-angle tilt GBs[21,22].Cahn et al.[23]proposed a geometric model to predict the GB coupled motion.The model considers the upper grain as a parallelogram.In particular,one face of the parallelogram is along the GB plane,while another one is normal to the tilt axis,and the third one is parallel to the slip plane.To calculate the coupling factor b,which is defined as the ratio of the normal to the lateral motion, the parallelogram isfirst sheared along the direction paral-lel to the slip plane by a magnitude of B(the sum of the Burgers vectors).Then the parallelogram is rotated clock-wise by h(tilt angle)to align the upper grain with the lower grain.The model gives two opposite signs for the coupling factor,which refer to the different slip mechanisms.For the slip plane of GB dislocation along the f100g plane:b¼2tanðh=2Þð1ÞFor the slip plane of GB dislocation along the f110g plane: b¼À2tanðp=4Àh=2Þð2ÞIt can be seen that the coupling factor only depends on the misorientations.Caillard et al.[7]have further proposed a model of shear-migration coupling for general GBs.A series of MD simulations of the h100i tilt GBs in Cu have been performed by Cahn et al.[5,6,21],confirming the above models.The coupling factors predicted by the geo-metric theory show excellent agreements with MD simula-tions and experimental data[24–27].In addition,three typical tilt GBs(h100i;h110i and h111i)in Ni have been investigated[28,29]using a synthetic driving force method. It was found that the GBs exhibit excellent agreements with the theory for most of the h100i boundaries,whereas the h110i and h111i boundaries did not obey the previous models.Wan and Wang[30]studied the R9h001i221f g GB in Cu,Al and Ni with different shear directions at room temperature.They observed various GB motions includ-ing coupling and sliding,while the motion types that are activated depended on the shear directions and mate-rials.In another report,occasional sliding has been observed during coupled motions as the strain rate increases[6].In other words,coupling and sliding take place once the stress has accumulated to a critical level. If the critical stress for coupling is larger than that needed to activate sliding,sliding motion will be dominant; otherwise,coupled motion will take place.In certain con-ditions,e.g.low temperatures or along some particular shear directions,if the critical stresses for coupling or sliding exceed the yield stress,dislocations accompanied by atomic shuffles will take place.Most of the investigations of GB motions focus on materials with face-centered cubic(fcc)structure such as Ni,Al and Cu.The GB motions of body-centered cubic (bcc)metals have rarely been studied except for the bcc-Fe R5h001i310f g symmetric tilt GB,which has been inves-tigated using MD under shear deformation from1to 600K.The nucleation and gliding of partial GB disloca-tions were found in GB migration[31].Do the GBs in bcc materials exhibit a behavior similar to that seen in fcc materials?Does the geometric theory hold valid in met-als with bcc structure?What is the relation between GB motions,temperatures and shear directions?To answer these questions,we choose the R5h001i310f g symmetric tilt GB of niobium(Nb)with bcc structure as a model in this paper.Nb is a refractory metal,and one of the most important elements in superalloys with promising applications.The GB is constructed using the coincidence site lattice(CSL)model.By applying shear loads parallel to the GB plane at a wide range of temperatures and differ-ent directions,we observe that there are various kinds of GB motion which depend on the shear conditions.We have shown that the shear deformation along the½1 30 axis is consistent with the prediction of geometric theory.Shear deformation along the½00 1 axis displays a GB pure sliding behavior.Other simulations whose directions are between the½1 30 and½00 1 axes show a mixed behavior.A transi-tion region between the coupling and sliding motions, which depends on the temperatures and directions,is described.The paper is organized as follows.In Section2, the general atomistic simulation method is described.In Section3,the results and discussions are presented.Finally, a summary of the present work and conclusions are given in Section4.2.Simulation methodologyThe shear deformation of the Nb R5h001i310f g GB is investigated in this paper.Simulation models are con-structed using the CSL method.We create the GB model by concatenating two separate grains with specific crystallo-graphic orientations.The orientation of the lower grain is shown in Fig.1.The upper grain is built by rotating the lower grain around the[310]axis for180°.The size of the simulation model is approximately10nmÂ10nmÂ20nm,which contains about120,000atoms.The periodic boundary condition(PBC)is applied along three dimen-sions to mimic the bulk material conditions.In order to avoid the interference of the second GB which is caused by the PBC,wefix the atoms on the top and bottom layers of the model.Thefixed atoms are located in their perfect lattice positions.We define the thickness of eachfixed region as twice of the cut-offdistance.Two grains undergo a rigid-body translation within the GB plane tofind the position with the lowest energy.A con-jugate gradient algorithm is applied for energy minimization in this work.Once the optimized structure is obtained,we then run MD simulations for sufficiently long times to ensureB.-W.Huang et al./Acta Materialia77(2014)258–268259the stability of the model.The initial equilibrium GB struc-ture is shown in Fig.2,which is viewed along the tilt axis.According to their CSL notation and the GB normal direction,this GB is termed R 5h 001i 310f g ;its structure was observed experimentally in Ref.[32].In Fig.2,thecontains six atoms located on the and the orientation vectors for both normal directions are given.The black two adjacent atomic planes along noted that each kite-like structure atoms belonging to two neighboring then performed to deform the GB shear strain rate of 1Â108s À1.The shear direction is parallel to the GB plane.Table 1lists the shear directions and the included angles between the ½00 1 tilt axis and the shear directions.The shear process deforms the simulation box as a whole.Stresses on all directions except the shear direction are allowed to relax during the simulations.A canonical the Nose–Hoover thermostat is applied lated using the standard viral expression.embedded atom method potential [34]in other studies [35,36].The accuracy confirmed by testing the elastic constants,lattice constant and thermal expansion.analysis (CNA)is used to display the simulations are realized using the LAMMPS of the GB simulation model that used in this work.The crystallographic directions are defined axis.symmetric tilt GB structure in Nb at 0K.Filled and empty circles represent the Nb atoms in two solid blue lines.(For interpretation of the references to color in this figure legend,the reader is3.Result and discussion3.1.Shear along the½1 30 directionShear deformation is applied along the½1 30 direction with a constant strain rate.The½1 30 direction is located on the GB plane and is perpendicular to the½00 1 tilt axis. We perform MD simulations at different temperatures to analyze the mechanisms of GB motion.Fig.3shows the stress–time relations at temperatures between1and 2400K(the bulk melting point2750K).It is obvious that the curves display a strong temperature dependence.The yield stress decreases exponentially with increasing temper-ature as shown in the inset of Fig.3.At temperatures between1and2100K,the stress–time curves display a sawtooth behavior.The stress drops when the critical value is reached.The magnitude of the dropping and the period of each curve are temperature independent between300and2100K.Ivanov[6]reported that the grain size in the normal direction affects the stress behavior dur-ing shear deformation.At temperatures below100K,the stress–time curves display larger stress drops and longer periods.The atoms at temperatures below100K are diffi-cult to move;thus the GBs can accumulate and release more elastic energy in one period.When the temperature stress and GB displacement at300K(see Fig.4).The GB position is tracked by the CNA computation,which gives values of3and5for atoms in the bcc lattice and the GB region,respectively[38].It is obvious that the GB migration curve displays a regular serrated profile,which is the so-called“stick–slip”behavior.While the“stick”stages correspond to elastic straining,the“slip”stages relate to certain structural transformations.During the elastic deformation stage,the shear stress increases almost linearly.After the critical stress is reached,the GB rapidly moves to a new position.As the deformation continues,the stress drops after GB migration;this is then followed by a new increase in the stress until the next peak.Each peak of the stress correlates exactly with an increment of the GB motion.One possible explanation is that the GB becomes mechanically unstable as the deformation continues and requires some mechanism to release the excess energy. GB migration is one of the mechanisms that is likely to occur in this condition.The accompanying grain transla-tion produces a permanent shear deformation.This type of GB motion is trapped in one energy minimum until it loses stability and jumps to a new minimum.Fig.5shows the GB migrations at different tempera-tures.It can be seen that the GB migration is similar for most of the temperatures considered here.An obviousTable1The shear directions,critical stresses and GB motion types at100K.Direction½00 1 ½1 3 30 ½1 3 20 ½1 3 15 ½1 3 10 ½1 3 6 ½ 39 5 ½1 3 1 ½1 30 Angle h0° 6.02°8.99°11.90°17.55°27.79°62.21°72.45°90°Critical stress(GPa) 3.50 5.00 4.80 4.10 2.80 2.20 1.18 1.10 1.22 Motion type Slide Mix Mix Mix Mix Couple Couple Couple Coupleshear along the½1 30 direction at temperatures between1and2400K.The simulations are performedof the plot shows the exponentialfitting of the critical stress.B.-W.Huang et al./Acta Materialia77(2014)258–268261At 100K,the GB jumps by twice the smallest height and the drop in stress is also doubled.The atoms cannot move easily at this low temperature;therefore,the accumulated elastic strain energy is so large that one single jump cannot release it completely.It is expected that at temperatures below 100K,higher multiple jumps may be observed.Sim-ulation at 1K shows a triple-distance migration which con-firms this expectation.At 2400K,the migration interrupted because of the GB pre-melting.These phenom-ena are consistent with a recent publication that reports the transition from stick–slip to driven Brownian dynamics for fcc materials [5].We measure the GB displacement on the GB plane study whether sliding is also occurring.The magnitude sliding is calculated using relative positions between twoFig.4.The shear stress and the GB migration as functions of time for shearing along ½1 30 at 300K.The process of migration exhibits a stick–slip behavior.The blue line is the stress–time curve and the red line represents the GB displacement which normal to the GB plane.(For interpretation of the references to color in this figure legend,the reader is referred to the web version of this article.)Fig.5.Migrations of the GB as functions of time at different temperatures for shearing along ½1 30 .Migrations exhibit stick–slip behavior at most temperatures.The GB exhibits a triple jumps and double jumps at 1and 100K,respectively.At 2400K,the GB shows random motions.Fig.6.Sliding of the GB as functions of time at different temperatures shearing along ½1 30 .Sliding exhibits stick–slip behavior at most temper-atures.The stick–slip behavior is weakened as temperature increases.As our simulations reveal similar behaviors in Nb,the same rule may also apply to other bcc materials.However,more GBs in other bcc materials need to be further tested in order to confirm this.To study the structure evolution of the GB,snapshots of the atomic positions are recorded at fixed time-step inter-vals.Fig.8shows a plot of the vector field of the R 5h 001if 310g GB,which is viewed along the ½00 1 direc-tion.It records the position variation before and after one migration.The green unit (abcdef)belongs to the lower grain and is interlocked with the kite-like blue unit (ABCDEF).The green unit is a slightly distorted version of the perfect lat-tice.Importantly,the green and blue units are topologically identical and can transform to each other by relatively small atomic displacements.At each step of boundary motion,the green unit changes its shape and transforms to a kite-like blue unit,whereas the blue unit simulta-neously transforms to an orange unit.Note that the latter is a mirror reflection of the green unit.As a result,the GB position shifts one step down while the upper grain translates to the right to accommodate thedeformation of the units.This process can be viewed as the glide of the parallel arrays of the GB dislocations along ½001 .The coupling factor can be obtained,which is the ratio of the unit displacement length on plane to that in the vertical direction.3.2.Shear along the ½00 1 directionThe ½00 1 direction is parallel to the tilt axis.We apply shear deformation along this direction as was done for the ½1 30 direction.Several phenomena that are different from those we have discussed in the ½1 30 direction are observed.It is determined that the GB motion is pure slid-ing along the ½00 1 direction.Stress–time curves at different temperatures are shown in Fig.9.The critical stress is much larger than that of the ½1 30 direction,which means pure sliding along the ½00 1 direction is harder to activate than coupled motion.The critical stress does not strongly depend on temperature in the range 100–300K.A periodic sliding behavior similar to the GB coupled motions is observed at most tempera-tures except 1K.Based on the analysis on the variance of the GB position,it is found that there is no displacement perpendicular to the GB plane.The GB can only slide along the ½00 1 direction within the GB plane.Similar tothe ½1 30 direction,the GB sliding velocities display temper-ature independence and remain constant.The shear stress and the GB in-plane displacement at 900K are shown as functions of time in Fig.10.The sliding along ½00 1 can also be regarded as a stick–slip process.The GB initially stays in a stick stage,and it accumulates strain throughout the crystal.The slip process takes place when strain reaches the critical level.Simulation at T =1K shows an abnormal behavior.In order to understand the mechanisms in detail,we monitor the crystal structure evolution at this temperature.Fig.11shows the deformation along the ½00 1 direction at 1K.It can be seen that a partial dislocation nucleates and is emit-ted from the GB,due to its lower activation energy com-pared to pure GB sliding at this temperature.Once the partial dislocation moves toward the fixed boundary,the region occupied by the stacking fault will extend.Mean-while,detailed analysis shows that limited GB sliding and local atomic shuffle also take place simultaneously.The nucleation and gliding of partial GB dislocations has previ-ously been observed in bcc Fe at low temperature [31].3.3.Shear between the ½1 30 and ½00 1 directionsIn this section,we conduct a series of simulations with shear directions between the ½1 30 and ½00 1 .The specific information about the shear directions are summarized in Table 1.We have divided the simulations into two groups based on the results at T =100K.The first group repre-sents shearing along the ½1 3 6 ;½ 39 5 and ½1 3 1 directions.These simulations behave similarly to the ½1 30 direction (coupled motion).The second group consists ofsimulationsFig.7.The GB coupled motion for shearing along ½1 30.(a)The migration and sliding as functions of time at 100K.The blue line describes migration and the red line represents the sliding process.(b)The coupling factor b as a function of temperature.The dashed line is the b predicted from the geometric model.(For interpretation of the references to color this figure legend,the reader is referred to the web version of this article.)77(2014)258–268263along the½1 3 30 ;½1 3 20 ;½1 3 15 and½1 3 10 directions;these show complex mechanisms at low temperatures and½00 1 -like pure sliding at high temperatures.In thefirst group,we have studieddirections in detail.The½1 3 6 directionclockwise to the½00 1 direction and62:21 anticlockwise to the½00 1simulations behave similarity.Thewith stick–slip behavior which is similaralong the½1 30 direction.Furthermore,movements do not only take placebut also in the vertical direction.Thethe½1 3 6 and½ 39 5 directions simultaneously.discussed previously,the GB exhibitsand a pure sliding when it is sheared½00 1 directions,respectively.Thus,the velocities of sliding into the½00Fig.12shows how we have decomposedstress.For shear along½1 3 6 ,the resolvedclose to zero and the resolved velocityThe GB migration velocity isÀ3.85m sÀ1.Therefore,the coupling factor isÀ0.99,which is consistent with that of the½1 30 direction.A similar decomposition is applied todisplacements for shearing along½1 30 at300K.The black dots represent the original positions trajectories.The blue and green lines represent the GB structural units before and after migration references to color in thisfigure legend,the reader is referred to the web version of this article.)relations for shearing along the½00 1 direction at temperatures between1and2100K.The simulations 8sÀ1.The inset shows the exponentialfitting of the critical stress.Fig.10.The shear stress and the GB sliding in the½00 1 direction asfunctions of time for shearing along½00 1 direction at900K.the critical stress.The resolved critical stress in½00 1 is 1.94GPa,which is much smaller than the stress needed to activate the½00 1 pure sliding(about 3.50GPa),at 100K.On the other hand,the resolved critical stress in ½1 30 is1.02GPa,which is comparable to the stress needed to activate the½1 30 coupled motionsmall difference could be compensatedFor further investigations,we haveulations at100,300,600and900resolved critical stresses and the criticalmation in the½00 1 ;½1 30 and½1 3results are consistent with experimentstress in the½00 1 is much smallerof pure sliding.The resolved criticaldirection is comparable to the criticalmotion.Moreover,Fig.13showsplaced in the½00 1 biningtor and the atomic structure evolution,shearing along the½1 3 6 directionnism as that along the½1 30 direction.It can also be seen from Table2½ 39 5 direction shows behavior similarin the½1 3 6 direction.The resolved½00 1 direction is always much smaller than the stress needed to activate pure sliding,while the resolved critical stress in the½1 30 direction and the critical stress along the½1 30 direction are comparable.Thus we conclude that the deformation along the½ 39 5 direction shares the same mechanism as the coupled motion in the½1 30 direction.dislocation nucleation,motion and atomic shuffle on the GB at1K.Atoms are colored according12.Decomposition of the½1 3 6 displacement into the½00 1 and½1 30directions.Table2The critical stress Fc,stress F and resolved stress f(in GPa)at different temperatures.Temperature Fc½00 1 Fc½1 30 F½1 3 6 f½00 1 f½1 30 F½ 39 5 f½00 1 f½1 30 100K 3.50 1.22 2.19 1.94 1.02 1.180.55 1.04 300K 4.200.58 1.070.950.500.580.270.52 600K 3.200.310.610.540.290.320.150.28 900K 2.500.180.430.380.200.220.100.19The stress–time relations as well as the GB displacements in different directions for shearing along½1 3 6 at various temperatures.Fig.14.The stress–time relation for shearing along the½1 3 10 ;½1 3 15 ;½1 3 20 and½1 3 30 directions at100K.By investigating the deformation mechanisms in thefirst group at100K,wefind that the simulations exhibit a½1 30 -like GB coupled motion once the angle between the shear direction and the½00 1 tilt axis is larger than the critical angle.In the second group,the angles between the shear direc-tions and the tilt axis are smaller than the critical value,and the stress–time curves of the four shear directions at100K are shown in Fig.14.The strain–stress curves display non-periodic behavior,which indicates that the shear deformations belong neither to the½1 30 -like GB coupled motion,nor to the½00 1 -like GB pure sliding.For the½1 3 30 shear direction(Fig.14(a)),whose included angle h is6:02 ,there are three different stages deformation.After the critical stress is reached,atomic shuffle appearsfirst to partially release the stress.A large number of dislocations then nucleate on the GB.As the deformation proceeds,finally,there is a GB distortion which makes the stress drop rapidly.For the shear along the½1 3 20 direction(Fig.14(b)), which has an included angle of h=8:99 ,there are two stages of deformation,which correspond to stages one and three of the½1 3 30 direction.Dislocation nucleations are not observed in our simulations.For the shears along the½1 3 15 and½1 3 10 directions (Fig.14(c)and(d)),the included angles h are11:90 and 17:54 ,respectively.The GB coupled motions are observed to release the stress.However,the GB coupled motions have limited effects on the deformation,and atomic shuffle and GB distortion still dominate the shearing process.Based on the above analysis,we conclude that a transi-tion region exists between the GB pure sliding and the GB coupled motion,which has different shear deformation mechanisms.With a larger included angle,the proportion of GB coupled motion increases.Nevertheless,we have not observed pure GB sliding,even for an extremely small angle.This is similar to the simulation along the½00 1 direction at1K.A possible reason is that a higher temperature is needed to activate the GB pure sliding in those small-angle simulations,as shown in the following discussion.The stress and the GB position are shown as functions of time in Fig.15for shearing along the½1 3 30 direction at900K.Sliding along½1 3 30 and½ 39 1 (perpendicular toFig.15.The stress and the GB displacement as functions of timeshearing along the½1 3 30 direction at900K.Arrow1is the½1 30 -likecoupled motion.Fig.16.Different types of GB motions with respect to temperatures and shear directions.77(2014)258–268267fourth peaks,the GB slides along the½1 30 and½00 1 direc-tions and simultaneously migrates;the½00 1 -like GB pure sliding dominates and releases most of the stress.The third and thefifth peaks indicate that the GB displays a pure sliding along the½00 1 direction.Since the barrier of the ½1 30 direction coupled motion is much smaller than the ½00 1 direction GB pure sliding,it is reasonable that a handful of½1 30 direction coupled motions take place at such high temperature.Thus,we consider that this simula-tion is similar to the½00 1 direction GB pure sliding.We have summarized the types of the GB motions for different temperatures and shear directions as shown in Fig.16.The MD simulations with½1 3 6 ;½ 39 5 ;½1 3 1 shear directions exhibit½1 30 -like GB coupled motion.The defor-mations with shear directions along the½1 3 30 ;½1 3 20 ;½1 3 15 and½1 3 10 are similar to that along½1 3 30 at T=900K.In addition,shear along the½1 3 30 direction is a½00 1 -like pure sliding at300K.It is found that the½00 1 pure sliding is dominating in small-angle simulations at high tempera-tures,while GB dislocations,distortion and atomic shuffle are the main deformation mechanisms at low temperatures.4.ConclusionWe have performed MD simulations to study the shear responses of the R5h001i310f g symmetric tilt GB in bcc Nb over a wide range of temperatures.Nine shear directions parallel to the GB plane have been studied,namely ½00 1 ;½1 3 30 ;½1 3 20 ;½1 3 15 ;½1 3 10 ;½1 3 6 ;½ 39 5 ;½1 3 1 and ½1 30 .For shear deformation along the½1 30 direction,the GB always shows a coupled motion regardless of the tempera-ture.The critical stress decreases exponentially with increas-ing temperature.The coupled motion displays a stick–slip behavior,i.e.the system is trapped in an energy minimum until the GB becomes unstable and jumps to a new mini-mum.At very low temperatures,we observe multiple jumps,which are different from the single jump at high temperatures.The GB coupling factor is found to be inde-pendent of temperature and can be predicted from geomet-ric calculations.Therefore,we propose that shearing along the direction perpendicular to the tilt axis shares a mecha-nism with the geometric theory proposed by Cahn.For the shear deformation along the½00 1 direction,the GB movement is pure sliding at most of the temperatures studied.The sliding is more difficult to activate than the coupled motion because its critical stress is much larger. Pure sliding is not observed at T=1K,and the GB exhib-its an unusual behavior caused by the dislocation nucleat-ing and extending.The shear deformations between the½1 30 and½00 1 directions are more complicated,and we have divided them into two groups according to their deformation mecha-nisms.Thefirst group has large angle between the shear directions and the tilt axis,which exhibits a GB coupled motion and a geometrically predictable coupling factor.Wefind that this type of deformation shares the same atomic structural evolution with the½1 30 shear direction. 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