AO3400A数据手册

10µs 100µs 1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Power (W)
1000 100
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G S
Maximum 30 ±12 5.7 4.7 30 1.4 0.9
-55 to 150
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
AO3400A
30V N-Channel MOSFET
General Description
Product Summary
The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

DescriptionThe AP3400AI uses advanced trench technologyto provide excellent R DS(ON), low gate charge andoperation with gate voltages as low as 2.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 30V I D =5.8AR DS(ON) < 42mΩ @ V GS=10V(Type:28mΩ)ApplicationBattery protectionLoad switchUninterruptible power supplyProduct ID Pack Marking Qty(PCS)AP3400AI SOT23A09T3000PCSAbsolute Maximum Ratings (T A=25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS30 VGate-Source Voltage V GS±12 VDrain Current-Continuous I D 5.8 ADrain Current-Pulsed (Note 1)I DM30 AMaximum Power Dissipation P D 1.4 W Operating Junction and Storage Temperature Range T J,T STG-55 To 150 ℃Thermal Resistance,Junction-to-Ambient (Note 2)RθJA89℃/W1Electrical Characteristics (T A=25℃unless otherwise noted)Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS=0V I D=250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS=30V,V GS=0V - - 1 μA Gate-Body Leakage Current I GSS V GS=±12V,V DS=0V - - ±100 nA Gate Threshold Voltage V GS(th)V DS=V GS,I D=250μA 0.7 0.9 1.4 VDrain-Source On-State Resistance R DS(ON)V GS=2.5V, I D=4A - 41 55 mΩ V GS=4.5V, I D=5A - 28 42 mΩ V GS=10V, I D=5.8A - 24 40 mΩForward Transconductance g FS V DS=5V,I D=5A 10 - - SInput Capacitance C lssV DS=15V,V GS=0V,F=1.0MHz - 825 - PFOutput Capacitance C oss- 100 - PF Reverse Transfer Capacitance C rss- 78 - PFTurn-on Delay Time t d(on)V DD=15V, R L=2.7ΩV GS=10V,R GEN=3Ω - 3.3 - nSTurn-on Rise Time t r- 4.8 - nS Turn-Off Delay Time t d(off)- 26 - nS Turn-Off Fall Time t f- 4 - nSTotal Gate Charge Q gV DS=15V,I D=5.8A,V GS=4.5V - 10 - nCGate-Source Charge Q gs- 1.6 - nCGate-Drain Charge Q gd- 3.1 - nCDiode Forward Voltage (Note 3)V SD V GS=0V,I S=5.8A - - 1.2 VDiode Forward Current (Note 2)I S- - 5.8 A Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production230V N-Channel Enhancement Mode MOSFET3Typical Electrical and Thermal Characteristics VoutFigure 1:Switching Test CircuitT J -Junction Temperature(℃) Figure 3 Power DissipationVds Drain-Source Voltage (V)Figure 5 Output CharacteristicsV INV tFigure 2:Switching Waveforms.T J -Junction Temperature(℃)Figure 4 Drain CurrentI D - Drain Current (A)Figure 6 Drain-Source On-ResistanceP D P o w e r (W )I D - D r a i n C u r r e n t (A ） R d s o n O n -R e s i s t a n c e (Ω)I D - D r a i n C u r r e n t (A )30V N-Channel Enhancement Mode MOSFET4Vgs Gate-Source Voltage (V)Figure 7 Transfer CharacteristicsVgs Gate-Source Voltage (V) Figure 9 Rdson vs VgsQg Gate Charge (nC) Figure 11 Gate ChargeT J -Junction Temperature(℃)Figure 8 Drain-Source On-ResistanceVds Drain-Source Voltage (V)Figure 10 Capacitance vs VdsVsd Source-Drain Voltage (V)Figure 12 Source- Drain Diode ForwardI D - D r a i n C u r r e n t (A )R d s o n O n -R e s i s t a n c e (Ω)V g s G a t e -S o u r c e V o l t a g e (V )N o r m a l i z e d O n -R e s i s t a n c eC C a p a c i t a n c e (p F ) I s - R e v e r s eD r a i n C u r r e n t (A )AP3400AI30V N-Channel Enhancement Mode MOSFET5SOT-23 Package InformationDimensions in Millimeters SymbolMIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000L 0.550REF L1 0.300 0.500θ 0° 8°AP3400AI30V N-Channel Enhancement Mode MOSFET6Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.。

VGS=10V
1.8
VGS=4.5V Id=5A 1.6
1.4
17
VGS=105V
1.2
Id=5.8A2
10
1
10
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8 0
25 50 75 100 125 150 175
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient Thermal Resistance
ID(A)
15
VDS=5V 12
9
6
125°C 3
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
RDS(ON) (mΩ)
30
25 VGS=4.5V
20
15
AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications.

Advanced micro-computer electronics and PI control algorithms provide precise temperature control. The thermostat provides a true multi-position modulating output to a tri-state floating actuator. A 24 VAC pulsed signal controls the reheat. This eliminates wasted energy caused by typical on-off cycling with conventional thermostats resulting in significant energy savings and superior comfort. Control accuracy is ± 0.4°F (± 0.2°C) around set point. The room occupant is able to reduce the set point to the lowest comfortable setting. A mechanical air volume minimum stop is provided (field set).
Sequence of Operation:
This arrangement is for systems supplying cool air in summer and hot air in winter. A duct temperature sensor senses inlet temperature and automatically reverses control action when supply air is above 78°F (26°C).