2SA1484 PDF规格书

3A 27V Synchronous Buck ConverterDescriptionThe HG1484 is a monolithic synchronous buck regulator. The device integrates 90 mΩ MOSFETS that provide 3A continuous load current over a wide operating input voltage of 4.5V to 27V. Current mode control provides fast transient response and cycle- by-cycle current limit. An adjustable soft-start prevents inrush current at turn on.Features● 3A Output Current● Wide 4.5V to 27V Operating Input Range ● Fixed 340KHZ Frequency● Integrated Power MOSFET switches● Output Adjustable from 0.925V to 0.8Vin Up to 93% Efficiency● Programmable Soft-Start● Stable with Low ESR Ceramic Output Capacitors● Cycle by Cycle Over Current Protection ● Short Circuit Protection● Input Under Voltage Lockout ● Package ： ESOP-8LApplications● Distributed Power Systems ● Networking Systems● FPGA, DSP, ASIC Power Supplies ● Green Electronics/ Appliances ●Notebook ComputersTypical Application CircuitPin AssignmentsPin Descriptionssection.Enable Input. When higher than 2.7V, this pin turns the IC on. When lowerthan 1.1V, this pin turns the IC off. Output voltage is discharged when the ICis off. This pin should not be left open. Recommend to putSoft-Start Control Input. SS controls the soft-start period. Connect a capacitorBlock DiagramAbsolute Maximum Ratings(Note: Exceeding these limits may damage the device. Even the duration of exceeding is very short.Exposure to absolute maximum rating conditions for long periods may affect device reliability.)(Note (1): Operating the IC over this voltage is very easy to cause over voltage condition to VIN pin, SW pin, BS pin & EN pin)(Note (2): If the IC experienced OTP, then the temperature may need to drop to <125 degree C to let the IC recover.)Electrical CharacteristicsApplication DescriptionHG1484 application circuit, 3.3V/3A outputHG1484 application circuit, 3.3V/3A output with EN functionNote: C2 is required for separate EN signal.Output Voltage SettingFigure1. Output Voltage SettingFigure 1 shows the connections for setting the output voltage. Select the proper ratio of the two feedback resistors R1 and R2 based on the output voltage. Typically, use R2 ≈ 10KΩ and determine R1 from the following equation:Table1－Recommended Resistance ValuesInductor SelectionThe inductor maintains a continuous current to the output load. This inductor current has a ripple that is dependent on the inductance value: higher inductance reduces the peak-to-peak ripple current. The tradeoff for high inductance value is the increase in inductor core size and series resistance, and the reduction in current handling capability. In general, select an inductance value L based on the ripple current requirement:Where V IN is the input voltage, V OUT is the output voltage, f SW is the switching frequency, and I OUTMAX is the maximum output current, and K RIPPLE is the ripple factor. Typically, choose K RIPPLE = ~ 30% to correspond to the peak-to-peak ripple current being ~30% of the maximum output current.With this inductor value, the peak inductor current is I OUT · (1 + K RIPPLE / 2). Make sure that this peak inductor current is less than the upper switch current limit. Finally, select the inductor core size so that itdoes not saturate at the current limit. Typical inductor values for various output voltages are shown in Table 2.Table2. Typical Inductor ValuesInput CapacitorThe input capacitor needs to be carefully selected to maintain sufficiently low ripple at the supply input of the converter. A low ESR Electrolytic (EC) capacitor is highly recommended. Since large current flows in and out of this capacitor during switching, its ESR also affects efficiency.When EC cap is used, the input capacitance needs to be equal to or higher than 100uF.The RMS ripple current rating needs to be higher than 50% of the output current. The input capacitor should be placed close to the VIN and GND pins of the IC, with the shortest traces possible. The input capacitor can be placed a little bit away if a small parallel 0.1uF ceramic capacitor is placed right next to the IC.When V IN is >15V, pure ceramic Cin (* no EC cap) is not recommended. This is because the ESR of a ceramic cap is often too small, pure ceramic Cin will work with the parasite inductance of the input trace and forms a V IN resonant tank. When V IN is hot plug in/out, this resonant tank will boost the Vin spike to a very high voltage and damage the IC.Output CapacitorThe output capacitor also needs to have low ESR to keep low output voltage ripple. In the case of ceramic output capacitors, RESR is very small and does not contribute to the ripple. Therefore, a lower capacitance value can be used for ceramic capacitors. In the case of tantalum or electrolytic capacitors, the ripple is dominated by RESR multiplied by the ripple current. In that case, the output capacitor is chosen to have sufficiently low ESR.For ceramic output capacitors, typically choose two capacitors of about 22uF. For tantalum or electrolytic capacitors, choose a capacitor with less than 50mΩ ESR.Optional Schottky DiodeDuring the transition between high-side switch and low-side switch, the body diode of the low side power MOSFET conducts the inductor current. The forward voltage of this body diode is high. An optional Schottky diode may be paralleled between the SW pin and GND pin to improve overall efficiency. Table 3 lists example Schottky diodes and their Manufacturers.Table 3－Diode Selection GuideStability CompensationC COMP2 is needed only for high ESR output capacitorFigure2. Stability CompensationThe feedback loop of the IC is stabilized by the components at the COMP pin, as shown in Figure2. The DC loop gain of the system is determined by the following equation:The dominant pole P1 is due to CCOMP1:The second pole P2 is the output pole:The first zero Z1 is due to RCOMP and CCOMP1:And finally, the third pole is due to RCOMP and CCOMP2 (if CCOMP2 is used):The following steps should be used to compensate the IC:STEP1. Set the crossover frequency at 1/10 of the switching frequency via RCOMP:But limit RCOMP to 10KΩ maximum. More than 10 KΩ is easy to cause overshoot at power on.STEP2. Set the zero fZ1 at 1/4 of the cros sover frequency. If RCOMP is less than 10KΩ, the equation for CCOMP is:STEP3. If the output capacitor’s ESR is high enough to cause a zero at lower than 4 times the crossoverfrequency, an additional compensation capacitor CCOMP2 is required. The condition for using CCOMP2is: Arrayis:And the proper value for C COMP2 ArrayThough CCOMP2 is unnecessary when the output capacitor has sufficiently low ESR, a small valueCCOMP2 such as 100pF may improve stability against PCB layout parasitic effects.Figur3. Load Transient Testing VS Compensation ValueTypical Performance Characteristics(V IN=12V, Io=0 mA, Temperature = 25 degree C, unless otherwise specified) Light Load Operation (No load) Heavy Load Operation (3A Load) V IN=12V, Iin=8.2 mA, Vout=3,3V VI N=12V, Vout=3,3VStartup V IN=12V, Vout=3.3V, Iout=1Athrough Vin. through Enable.Startup Vin=12V, Vout=3.3V, Iout=1Athrough Vin. through Enable.Important statement:Huaguan Semiconductor Co,Ltd.reserves the right to change the products and services provided without notice.Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage.Our products are not licensed for applications in life support, military,aerospace,etc.,so we do not bear the consequences of the application of these products in these fields.Our documentation is only permitted to be copied without any tampering with the content,so we do not accept any responsibility or liability for the altered documents.。

Transistors Rev.A 1/3Muting Transistor (15V, 1A)2SD1468Sz Features1) Low saturation voltage, typically V CE(sat) = 0.08V at Ic / I B = 500mA / 500µA.2) Ideal for low voltage, high current drives. 3) High DC current gain and high current.z Absolute maximum ratings (T a=25°C)ParameterSymbol V CBO V CES V EBO I C P C Tj TstgLimits 3015510.3150−55 to +150Unit V V V A W °C°CCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector power dissipation Junction temperature Storage temperaturez Electrical characteristics (T a=25°C)ParameterSymbol Min.Typ.Max.Unit ConditionsBV CBO BV CEO BV EBO I CBO I EBO V CE(sat)f T Cob30155−−−50−−−−−−0.0815015−−−0.50.50.4−30V V V µA µA V MHz pFI C =50µA I C =1mA I E =50µAV CB =20V V EB =4VI C /I B =0.5mA/50mA h FE 120−560−V CE /I C =3V/0.1AV CE =5V , I E = −50mA , f =100MHz V CE =10V , I E =0A , f =1MHzCollector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff currentEmitter cutoff currentCollector-emitter saturation voltage Transition frequency Output capacitanceDC current transfer ratioz Packaging specifications and h FEType 2SD1468S SPT QRS 5000Package h FETP CodeBasic ordering unit (pieces)TransistorsRev.A 2/3z Electrical characteristics curvesFig.1 Ground emitter output characteristicsC O L L E C T O RC U R R E N T : I C (m A )COLLECTOR TO EMITTER VOLTAGE : V CE (mV)Fig.2 Ground emitter propagationcharacteristicsC O L L E C T O R C U R R E N T : I C (m A )BASE TO EMITTER VOLTAGE : V BE (V)Fig.3 DC current gain vs. collector currentD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.4 Collector-emitter saturation voltage vs. collector currentC O L L E C T O R S A T U RA T I O N V O L T A G E : V C E (s a t ) (m V )COLLECTOR CURRENT : I C (mA)Fig.5 Collector-emitter saturation voltage vs. base currentC O L L E C T O R S A T U R A T I O N V OL T A G E : V C E (s a T ) (m V )BASE CURRENT : I B (mA)Fig.6 Gain bandwidth productvs. emitter currentT R A N S I T I O N F R E Q U E N C Y : f T (M H z )EMITTER CURRENT : I E (mA)C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.7 Collector output capacitancevs. collector-base voltageE M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )EMITTER TO BASE VOLTAGE : V EB (V)Fig.8 Emitter input capacitance vs. emitter-base voltageO N R E S I S T A N C E : R o n (Ω)BASE CURRENT : I B (mA)Fig.9 "ON" resistancevs. base current characteristicsTransistorsRev.A 3/3Ron = ×R Lv 0v 0v i −v 0output input V i Fig.10 "ON" resistance measurement circuit1kHzAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1。

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium.Features•Reduces Board Space•High h FE, 210−460 (typical)•Low V CE(sat), < 0.5V•Available in 8mm, 7−inch/3000 Unit Tape and Reel•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS (T A = 25°C)Rating Symbol Value Unit Collector − Emitter Voltage V(BR)CBO−60Vdc Collector − Base Voltage V(BR)CEO−50Vdc Emitter − Base Voltage V(BR)EBO−6.0Vdc Collector Current − Continuous I C−100mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Power Dissipation (Note 1)P D150mW Junction T emperature T J150°C Storage T emperature Range T stg−55 ~ +150°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the RecommendedOperating Conditions may affect device reliability.1.Device mounted on a FR−4 glass epoxy printed circuit board using theminimum recommended footprint.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting T echniques ReferenceManual, SOLDERRM/D.MARKING DIAGRAMCOLLECTOR1BASE2EMITTERSC−75CASE 463STYLE 1F9= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.Device Package Shipping†ORDERING INFORMATION2SA1774G SC−75(Pb−Free)3,000/T ape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.2SA1774T1G SC−75(Pb−Free)3,000/T ape & Reel S2SA1774G SC−75(Pb−Free)3,000/T ape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C)Characteristic Symbol Min Typ Max UnitCollector−Base Breakdown Voltage (I C = −50 m Adc, I E = 0)V(BR)CBO−60−−VdcCollector−Emitter Breakdown Voltage (I C = −1.0 mAdc, I B = 0)V(BR)CEO−50−−VdcEmitter−Base Breakdown Voltage (I E = −50 m Adc, I E = 0)V(BR)EBO−6.0−−VdcCollector−Base Cutoff Current (V CB = −30 Vdc, I E = 0)I CBO−−−0.5nAEmitter−Base Cutoff Current (V EB = −5.0 Vdc, I B = 0)I EBO−−−0.5m ACollector−Emitter Saturation Voltage (Note 2) (I C = −50 mAdc, I B = −5.0 mAdc)V CE(sat)−−−0.5VdcDC Current Gain (Note 2)(V CE = −6.0 Vdc, I C = −1.0 mAdc)h FE120−560−Transition Frequency(V CE = −12 Vdc, I C = −2.0 mAdc, f = 30 MHz)f T−140−MHzOutput Capacitance(V CB = −12 Vdc, I E = 0 Adc, f = 1 MHz)C OB− 3.5−pFFigure 1. Collector −Emitter Saturation Voltagevs. Collector Current10.1I C , COLLECTOR CURRENT (mA)V C E , C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 2. Base −Emitter Saturation Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)V B E (s a t ), B A S E −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 3. DC Current Gain vs. CollectorCurrentI C , COLLECTOR CURRENT (mA)h F E , D C C U R R E N T G A I NFigure 4. Saturation RegionI B , BASE CURRENT (mA)V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 5. Base −Emitter Turn −ON Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)V B E (O N ), B A S E −E M I T T E R O N V O L T A G E (V )Figure 6. CapacitanceV R , REVERSE VOLTAGE (V)C , C A P A C I T A N C E (p F )10Figure 7. Current Gain Bandwidth Product vs.Collector CurrentI C , COLLECTOR CURRENT (mA)f t a u , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )Figure 8. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (m A )PACKAGE DIMENSIONSSTYLE 1:PIN 1.BASE 2.EMITTER 3.COLLECTORSC −75/SOT −416CASE 463ISSUE FNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.DIM MIN NOM MAX MILLIMETERS A 0.700.800.90A10.000.050.10b C 0.100.150.25D 1.55 1.60 1.65E e 1.00 BSC 0.0270.0310.0350.0000.0020.0040.0040.0060.0100.0590.0630.0670.04 BSCMIN NOM MAX INCHES0.150.200.300.0060.0080.012H EL 0.100.150.201.50 1.60 1.700.0040.0060.0080.0610.0630.0650.700.800.900.0270.0310.035ǒmm inchesǓSCALE 10:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIS2SA1774G。