ESDA25DB3中文资料

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ESDA25DB3®January 1998-Ed :218BIDIRECTIONAL TRANSIL ™FUNCTIONS LOW CAPACITANCE :C =30pF@V RM 500W peak pulse power (8/20µs)FEATURESSO20FUNCTIONAL DIAGRAM12345678910I/O 18I/O 17I/O 16I/O 15I/O 14I/O 13I/O 12I/O 11I/O 1020191817161514131211I/O 1I/O 2I/O 3I/O 4I/O 5I/O 6I/O 7I/O 8I/O 9GND GND DESCRIPTIONThe ESDA25DB3is a dual monolithic voltage suppressor designed to protect componentswhich are connected to data and transmission lines against ESD.TRANSIL ™ARRAY FOR ESD PROTECTIONApplication Specific DiscretesA.S.D.™Where transient overvoltage protection in esd sensitiveequipment is required,such as :-COMPUTERS -PRINTERS-COMMUNICATION SYSTEMSIt is particulary recommended for RS232I/O port protectionwhere the line interfacewithstands 2kV,ESD surges.APPLICATIONSBENEFITSHigh ESD protection level :up to 25kV High integrationSuitable for high density boardsIEC 1000-4-2:level 4MIL STD 883C-Method 3015-6:class 3(human body model)COMPLIESWITHTHEFOLLOWINGSTANDARDS :1/5Symbol ParameterV RM Stand-off voltage V BR Breakdown voltage V CL Clamping voltage I RM Leakage current I PPPeak pulse currentαTVoltage temperature coefficient C Capacitance RdDynamic resistanceELECTRICAL CHARACTERISTICS (T amb =25°C)Symbol ParameterValue Unit V PP Electrostatic dischargeMIL STD 883C -Method 3015-625kV P PP Peak pulse power (8/20µs)500W T stg T j Storage temperature range Maximum junction temperature-55to +150125°C °C T LMaximum lead temperature for soldering during 10s260°CABSOLUTE MAXIMUM RATINGS (T amb =25°C)Types V BR @I R I RM @V RM Rd αT C min.max.max.typ.max.typ.note1note1note 2note 30V bias VV mA µA V Ω10-4/°C pF ESDA25DB3253012240.59.750note 1:Betwenn any I/O pin Groungnote 2:Square pulse,Ipp =25A,tp=2.5µs.note 3:∆V BR =αT*(Tamb -25°C)*V BR (25°C)ESDA25DB32/5The ESDA family has been designed to clamp fast spikes like ESD.Generally the PCB designers need to calculate easily the clamping voltage V CL. This is why we give the dynamic resistance in addition to the classical parameters.The voltage across the protection cell can be calculated with the following formula:V CL=V BR+Rd I PPWhereIpp is thepeakcurrentthroughtheESDAcell. DYNAMIC RESISTANCE MEASUREMENTThe short duration of the ESD has led us to prefer a more adapted test wave,as below defined,to the classical8/20µs and10/1000µs surges.2.5µs duration measurement wave.As the value of the dynamic resistance remains stable for a surge duration lower than20µs,the 2.5µs rectangularsurge is well adapted.In addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of Rd.CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE2µstp=2.5µs tIIppESDA25DB33/52550751001251500.00.10.20.30.40.50.60.70.80.91.01.1Ppp[Tj initial]/Ppp[Tj initial=25°C]Tj initial(°C)Fig.1:Peak power dissipation versus initial junction tempearature.2025303540455055600.11.010.050.0Ipp(A)tp=2.5µsV (V)CL Fig.3:Clamping voltage versus peak pulse current (Tj initial =25°C).Rectangular waveform tp =2.5µs.11010010010005000Ppp(W)tp(µs)Fig.2:Peak pulse power versus exponential pulse duration (Tj initial =25°C).1251030102050100C(pF)F=1MHz Vosc=30mVV (V)R Fig.4:Capacitance versus reverse applied voltage (typical values).255075100125110100200I [Tj]/I [Tj=25°C]R R Tj(°C)Fig.5:Relative variation of leakagecurrent versus junction temperature (typical values).ESDA25DB34/5PACKAGE MECHANICAL DATA SO20PlasticPackaging :Preferred packaging is tape and reel.Weight :0.55g.Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is grantedby implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change withoutnotice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.©1998SGS-THOMSON Microelectronics -Printed in Italy -All rights reserved.SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia -Brazil -Canada -China -France -Germany -Italy -Japan -Korea -Malaysia -Malta -Morocco The Netherlands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.MARKING :Logo,Date Code,E25DB3REF.DIMENSIONSMillimetres Inches Min.Typ.Max.Min.Typ.Max.A2.650.104A10.100.200.0040.008B 0.330.510.0130.020C 0.230.320.0090.013D 12.613.00.4840.512E 7.407.600.2910.299e 1.270.050H 10.010.650.3940.419h 0.500.020L 0.501.270.0200.050K8°(max)Khx45°CLAA1BeDE HORDER CODEESDA 25D B 3RLV BR minPackage:SO20PACKAGING:RL =Tape and reel =Tube ESD ARRAYBidirectionelESDA25DB35/5。