L298N中文资料步进电机驱动芯片L298中文资料双全桥步进电机专用驱动芯片( Dual Full-Bridge Driver )L298中文资料L298N 为SGS-THOMSON Microelectronics 所出产的双全桥步进电机专用驱动芯片( Dual Full-Bridge Driver ) ，内部包含4信道逻辑驱动电路，是一种二相和四相步进电机的专用驱动器，可同时驱动2个二相或1个四相步进电机，内含二个H-Bridge 的高电压、大电流双全桥式驱动器，接收标准TTL逻辑准位信号，可驱动46V、2A以下的步进电机，且可以直接透过电源来调节输出电压；此芯片可直接由单片机的IO端口来提供模拟时序信号，但在本驱动电路中用L297 来提供时序信号，节省了单片机IO 端口的使用。
L298N 之接脚如图9 所示，Pin1 和Pin15 可与电流侦测用电阻连接来控制负载的电路； OUTl、OUT2 和OUT3、OUT4 之间分别接2 个步进电机；input1~input4 输入控制电位来控制电机的正反转；Enable 则控制电机停转。
图9 L298引脚图图10 L298 内部逻辑图L298 ABSOLUTE MAXIMUM RATINGS 绝对最大额定值： Symbol符号Parameter 参数Value数值单位VSPower Supply 电源50VSSLogic Supply Voltage 电源电压7VVI,VenInput and Enable Voltage 输入电压和启用–0.3 to 7VIO峰值输出电流(每通道)非重复性(t= 100ms)3重复(80% on –20% off; ton = 10ms) 2.5直流运行2VsensSensing Voltage 感应电压–1 to 2.3VPtotTotal Power Dissipation (Tcase=75℃)总功率耗散(Tcase=75 ℃)25WTopJunction Operating Temperature 结工作温度–25 to 130℃Tstg,TjStorage and Junction Temperature 储存温度–40 to 150℃L298 PIN FUNCTIONS (refer to the block diagram) 引脚功能（请参阅框图）：PowerSONameFunction 功能说明1;152;19Sense A; Sense B 引脚电流监测端,1、15和PowerSO的2、19用法一样，SEN1、SEN2分别为两个H桥的电流反馈脚，不用时可以直接接地2;34;5Out 1; Out 21Y1、1Y2输出端46VS功率电源电压,此引脚与地必须连接100nF电容器 5;77;9Input 1; Input 21A1、1A2输入端，TTL电平兼容6;118;14Enable A; Enable BTTL电平兼容输入 1EN、2EN使能端，低电平禁止输出 81,10,11,20GNDGND地912VSS逻辑电源电压。
Technical Data Sheet Side Face Silicon PhototransistorPT2559B/L2/H2-FFeatures․Fast response time ․High photo sensitivity ․Pb free ․This product itself will remain within RoHS compliant version.Descriptions• PT2559B/L2/H2-F is a high speed and high sensitive dual phototransistor molded in a black plastic package with plat side view. • The device is spectrally matched with IR emitters.Applications• Mouse • Optoelectronic Switch • Photo InterrupterDevice Selection Guide LED Part No.PT2559B/L2/H2-FChip MaterialSiliconLens ColorBlack..Everlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 1 of 8/PT2559B/L2/H2-FPackage DimensionsNotes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mmAbsolute Maximum Ratings (Ta=25℃)Parameter Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Lead Soldering Temperature(*1) Power Dissipation at (or below) 25℃ Free Air Temperature Symbol VCEO VECO IC Topr Tstg Tsol PD Rating 30 5 20 -25 ~ +85℃ -40 ~ +85℃ 260 75 Units V V mA ℃ ℃ ℃ mWNotes: *1:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 2 of 8/PT2559B/L2/H2-FElectro-Optical Characteristics (Ta=25℃)Parameter Collector – Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current Symbol BVCEO BVECO VCE(sat) tr tf Condition IC=100μA Ee=0mW/cm2 IE=100μA Ee=0mW/cm2 IC=2mA Ee=1mW/cm2 Min 30 5 --Typ ------Max Unit ----0.4 --μS ----15 ----100 nA V V VVCE=5V IC=1mA RL =1000Ω Ee=0mW/cm2 VCE=20V VCE=5V, Ee=0.555mW/cm2 --------15ICEOOn State Collector Current Wavelength of Peak Sensitivity Rang of Spectral BandwidthIC(on) λp λ0.5129---1085 μA--760940 -----1100nm nmEverlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 3 of 8/PT2559B/L2/H2-FTypical Electro-Optical Characteristics CurvesFig.1 Power Dissipation vs. Ambient Temperature Fig.2 Spectral Sensitivity100 80 60 40 20 01.0 Ta=25 C 0.8 0.6 0.4 0.2-250255075 85 10001100 1200Fig.3 Dark Current vs. Ambient TemperatureFig. 4 Reverse Light Current vs. Ee10100 C10 1010 1 0.1 0.01 0.510 10 0 25 50 75 1001325Everlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 4 of 8/PT2559B/L2/H2-FTypical Electro-Optical Characteristics CurvesFig.5 Terminal Capacitance vs. Reverse Voltage`Fig.6 Response Time vs. Load Resistance160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70214 12 10 8 6 4 2 0 0 1 2 3 4Everlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 5 of 8/PT2559B/L2/H2-FReliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below. Confidence level：90% LTPD：10% NO. Item 1 Solder Heat 2 Temperature Cycle L : -40℃ H :+100℃ 3 Thermal Shock L :-10℃ 4 5 High Temperature Storage Low Temperature Storage Test Conditions TEMP.：260℃ H : +100℃ 15mins 5mins 300Cycles 15mins 5mins 10secs 300Cycles 5mins 1000hrs 1000hrs 1000hrs 1000hrs 22pcs IC(ON)≦L×0.8 L：the initial test value 0/1 22pcs 0/1 Test Hours/ Sample Cycles Sizes 10secs 22pcs Failure Judgement Criteria Ac/Re 0/1TEMP.：+100℃ TEMP.：-40℃22pcs 22pcs 22pcs 22pcs0/1 0/1 0/1 0/16 DC Operating Life VCE=5V 7 High Temperature/ 85℃ / 85% R.H High HumidityEverlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 6 of 8/PT2559B/L2/H2-F█ Test Method For On State Collector Current :Condition : Ee=0.555mW/cm2 , VCE=5V Test Item : Collector Current [IC(on)] Unit : µA█ To Distinguish Intensity:Condition:VCE:5V A RanksColor CodeEe:0.555mW/cm2Symbol Min Typ Max Unit Test ConditionEe=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5V Ee=0.555mW/c ㎡ VCE=5VRanksRed Blue Yellow Silver Green Purple White Brown Orange Golden Pink Red,BlueA1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12IC(ON) IC(ON) IC(ON) IC(ON) IC(ON) IC(ON IC(ON IC(ON IC(ON IC(ON IC(ON) IC(ON)129 195 262 330 398 468 536 604 673 742 812 882-------------------------226 306 380 461 544 625 703 785 862 944 1018 1085μA μA μA μA μA μA μA μA μA μA μA μAEverlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 7 of 8/PT2559B/L2/H2-FPacking Quantity Specification1. 1000Pcs/1Bag，8Bags/1Box 2. 10Boxes/1CartonLabel Form SpecificationCPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot NumberPT2559B/L2/H2-FNotes1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.CTel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\Everlight Electronics Co., Ltd. Device No: CDPT-255-013http:\\ Prepared date: 2007/1/6Rev 1 Prepared by: zhouhongPage: 8 of 8/分销商库存信息:EVERLIGHT PT2559B/L2-F PT2559B/L2/H2-F。
产品说明书侧面感光双晶NPN光敏三极管PT2559B/L2⏹描述PT2559B/L2是一款高速高灵敏度双晶NPN型光敏三极管侧面感光结构，采用黑色环氧材料封装，使产品适用于红外波段的感光，对可见光有滤波作用。
⏹特点●快速响应●高感光灵敏度●无铅环保⏹应用●电机测速●计数器●鼠标●红外传感应用系统⏹封装尺寸感光面芯片尺寸和排列发射极 A集电极发射极 B注: 1. 所有尺寸单位位毫米(括号内单位为英寸)2. 未标明误差的精度为± 0.25毫米(.01英寸)⏹极限参数(Ta=25℃)参数名称符号参考值单位集电极-发射极电压V CEO60V发射极-集电极电压V ECO6V集电极电流Ic20mA焊接温度*1Tsol260℃工作温度Topr-20~+85℃存储温度Tstg-40~+85℃说明:*1:焊接时间≦5seconds.⏹光电参数(Ta=25℃)参数名称符号最小典型最大单位测试条件频谱范围λ0.5840--1100nm感光峰值波长λP--940--nm集电极–发射极击穿电压BV CEO60----VIc=500μA,Ib=0发射极-集电极击穿电压BV ECO6----V Ic=50μA,Ib=0集电极暗电流ICEO----50nA V CE=10V, H=0mw/cm2集电极-发射极饱和电压V CE（S）---0.2VIc=5mA,I B=1mA集电极电流I C(on)0.7 1.5--mA Ee=1mW/cm2, V CE=5V直流电流放大倍数HFE1200--1800V CE=5V, IC=2mA上升/下降时间t r/t f--15/15μS V CE=5V, I C=1mA R L=1000ΩAmbient Temperature Ta(°C)C o l l e c t o r P o w e rD i s s i p a t i o n (m W )40100020406080100-20-40608020300Ambient Temperature Ta(°C)R e l a t i v e C o l l e c t o r C u r r e n t (%)40608060100160Vce=5V204080120140Ee=1mW/cm 2102050701008060200600Wavelength(nm)R e l a t i v e S p e c t r a l S e n s i t i v i t y (%)Ta=25°407008009001000110012001Irradiance Ee(mW/cm )C o l l e c t o r C u r r e n t I c (m A )1.530.51010101010210Vce=5VT =25 Ca °2 特性曲线图图.1集电极耗散功率与环境温度图.2相对频谱灵敏度图.3相对集电极电流与环境温度图.4集电极电流与辐照度25Ambient Temperature (°C)C o l l e c t o rD a r k C u r r e n t IC E O(n A )50751000.1110100Vce=20V 0Collector-Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I c (m A )12340.51.01.52.02.53.03.5Ee=0.5mW/cm2Ee=0.75mW/cm 2Ee=1.0mW/cm 2Ee=1.25mW/cm 2Ee=1.5mW/cm2图.5集电极暗电流与环境温度图.6集电极电流与集射电压注意事项:1.我公司保留更改产品材料和以上说明书的权利，更改以上产品说明书恕不另行通知。
