BZT52系列单极性电源芯片数据手册说明书
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BZT52 series
Single Zener diodes in a SOD123 package
Rev. 1 — 16 March 2017
Product data sheet
1Product profile
1.1General description
General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD)
plastic package.
1.2Features and benefits
•Total power dissipation: ≤ 590 mW
•Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
•Small plastic package suitable for surface-mounted design
•Low differential resistance
•AEC-Q101 qualified
1.3Applications
•General regulation functions
1.4Quick reference dataTable 1. Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
Fforward voltageI
F = 10 mA[1]
--0.9V
[2]
--350mWP
tottotal power dissipationT
amb ≤ 25 °C
[3]
--590mW
[1]Pulse test: t
p ≤ 300 μs; δ ≤ 0.02.
[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2
.NexperiaBZT52 series
Single Zener diodes in a SOD123 package
BZT52_SERAll information provided in this document is subject to legal disclaimers.© Nexperia B.V. 2017. All rights reserved.
Product data sheetRev. 1 — 16 March 2017
2 / 132Pinning informationTable 2. PinningPinSymbolDescriptionSimplified outlineGraphic symbol
1Kcathode[1]
2Aanode 21
006aaa15221
[1]The marking bar indicates the cathode.
3Ordering information
Table 3. Ordering information
PackageType number
NameDescriptionVersion
BZT52-C2V4 to BZT52-
C75[1]-plastic surface-mounted package; 2 leadsSOD123
[1]The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4MarkingTable 4. Marking codes
Type
numberMarking
codeType
numberMarking
codeType
numberMarking
codeType
numberMarking
code
BZT52-C2V4C1BZT52-C6V2CBBZT52-C16CMBZT52-C43CY
BZT52-C2V7C2BZT52-C6V8CCBZT52-C18CNBZT52-C47D1
BZT52-C3V0C3BZT52-C7V5CDBZT52-C20CPBZT52-C51D2
BZT52-C3V3C4BZT52-C8V2CEBZT52-C22CQBZT52-C56D3
BZT52-C3V6C5BZT52-C9V1CFBZT52-C24CRBZT52-C62D4
BZT52-C3V9C6BZT52-C10CGBZT52-C27CSBZT52-C68D5
BZT52-C4V3C7BZT52-C11CHBZT52-C30CTBZT52-C75D6
BZT52-C4V7C8BZT52-C12CJBZT52-C33CU--
BZT52-C5V1C9BZT52-C13CKBZT52-C36CV--
BZT52-C5V6CABZT52-C15CLBZT52-C39CW--NexperiaBZT52 series
Single Zener diodes in a SOD123 package
BZT52_SERAll information provided in this document is subject to legal disclaimers.© Nexperia B.V. 2017. All rights reserved.
Product data sheetRev. 1 — 16 March 2017
3 / 135Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameterConditionsMinMaxUnit
I
Fforward current-250mA
I
ZSMnon-repetitive peak reverse current-see Table 8, 9
and 10
P
ZSMnon-repetitive peak power
dissipation[1]
-40W
[2]
-350mWP
tottotal power dissipationT
amb ≤ 25 °C
[3]
-590mW
T
jjunction temperature-150
T
ambambient temperature−55+150°C
Tstgstorage temperature−65+150°C
[1]t
p = 100 μs; square wave; T
j = 25 °C prior to surge.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6Thermal characteristics
Table 6. Thermal characteristics
SymbolParameterConditionsMinTypMaxUnit
[1]
--350K/WR
th(j-a)thermal resistance from junction
to ambientin free air
[2]
--210K/W
R
th(j-sp)thermal resistance from junction
to solder point[3]
--55K/W
[1]Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2
.
[3]Soldering point of cathode tab.
7Characteristics
Table 7. Characteristics
T
j = 25 °C unless otherwise specified.
SymbolParameterConditionsMinTypMaxUnit
V
Fforward voltageI
F = 10 mA[1]
--0.9V
[1]Pulse test: t
p ≤ 300 μs; δ ≤ 0.02.NexperiaBZT52 series
Single Zener diodes in a SOD123 package
BZT52_SERAll information provided in this document is subject to legal disclaimers.© Nexperia B.V. 2017. All rights reserved.
Product data sheetRev. 1 — 16 March 2017
4 / 13Table 8. Characteristics per type; BZT52-C2V4 to BZT52-C24
Tj = 25 °C unless otherwise specified.
Working
voltage
V
Z (V);
I
Z = 5 mAMaximum
differential
resistance
r
dif (Ω)Reverse
current
I
R (μA)Temperature
coefficient
S
Z (mV/K);
I
Z = 5 mADiode
capacitance
C
d (pF)[1]Non-
repetitive
peak reverse
current
I
ZSM (A)[2]BZT52
-xxxSel
MinMaxI
Z = 1 mAI
Z = 5 mAMaxV
R (V)MinMaxMaxMax
2V4C2.22.640085501−3.50.04506.0
2V7C2.52.950083201−3.50.04506.0
3V0C2.83.250095101−3.50.04506.0
3V3C3.13.55009551−3.50.04506.0
3V6C3.43.85009551−3.50.04506.0
3V9C3.74.15009531−3.50.04506.0
4V3C4.04.65009531−3.50.04506.0
4V7C4.45.05007832−3.50.23006.0
5V1C4.85.44806022−2.71.23006.0
5V6C5.26.04004012−2.02.53006.0
6V2C5.86.615010340.43.72006.0
6V8C6.47.2808241.24.52006.0
7V5C7.07.98010152.55.31504.0
8V2C7.78.780100.753.26.21504.0
9V1C8.59.6100100.563.871503.0
10C9.410.670100.274.58903.0
11C10.411.670100.185.49.0852.5
12C11.412.790100.186.010.0852.5
13C12.414.1110100.187.011.0802.5