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LR1118-XX-AB3-D-R中文资料

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UNISONIC TECHNOLOGIES CO., LTDLR1118LINEAR INTEGRATED CIRCUITLOW DROP POSITIVE VOLTAGE REGULATORSDESCRIPTIONThe UTC LR1118 is a low drop voltage regulator able to provideup to 1A of output current, available also for adjustable version (V REF =1.24V). Output consists of pnp power transistor. So that dropout voltage can be extremely low.FEATURES* 2.85V device are suitable for SCSI-2 active termination * Output current up to 1A* Adjustable version available.(V REF =1.24V) * Internal current and thermal limit* Available in±1%(at 25°C) and 2% in all temperature range*Pb-free plating product number: LR1118LORDERING INFORMATIONOrder NumberNormal Lead Free PlatingPackage① Pin Assignment ② Packing LR1118-xx-AA3-①-② LR1118L-xx-AA3-①-② SOT-223LR1118-xx-AB3-①-② LR1118L-xx-AB3-①-② SOT-89 LR1118-xx-TA3-①-② LR1118L-xx-TA3-①-② TO-220 LR1118-xx-TN3-①-② LR1118L-xx-TN3-①-② TO-252 LR1118-xx-TQ2-①-② LR1118L-xx-TQ2-①-② TO-263 LR1118-xx-TQ3-①-② LR1118L-xx-TQ3-①-② TO-263-3A: GOI B: OGIC: GIOD: IGOLR1118-xx-S08-①-② LR1118L-xx-S08-①-② SOP-8 GOOIxOOxR: Tape ReelT: TubeNote: 1. Pin assignment: I:Vin O:Vout G:GND x:NCMARKING INFORMATIONTHERMAL DATAPARAMETER SYMBOL RATINGS UNITSOT-22315SOT-89 15 SOP-8 20TO-252 8 TO-220 4 Thermal Resistance Junction-Case TO-263 θJC 4°C/WBLOCK DIAGRAMCCUTAPPLICATION CIRCUITV INV OUTABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL RATINGS UNITDC Input Voltage V IN 15 V Operating Junction Temperature T OPR 0 ~ +125 °CStorage Temperature T STG -40 ~ +150 °C Note: 1. The device may be damaged while beyond Absolute Maximum Rating.2. The device is guaranteed to meet performance specifications within 0°C~+70°C operation temperature range, and is assured by design from 0°C~+125°C.ELECTRICAL CHARACTERISTICS(Ta=25°C, refer to the test circuits, T J =-0~125°C, C O =10µF, unless otherwise specified.)For LR1118-1.8VPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT1% 1.782 1.8 1.818Output Voltage V OUTV IN =V OUT +1.5V, I OUT =10mA, T J =25°C 2% 1.764 1.836V Output Voltage V OUT V IN =(V OUT +2V)~15V, I OUT =0 to 1A 1.764 1.8 1.836 VLine Regulation ∆V OUT V IN =(V OUT +2V)~15V, I OUT =0A 0.1 0.6 % Load Regulation ∆V OUT V IN =V OUT +2V, I OUT =0 to 1A 2 3 % Temperature Stability ∆V OUT 0.5 % Long Term Stability ∆V OUT 1000 hrs, T J =125°C 0.3 % Operating Input Voltage V IN I OUT =100mA 15 V Quiescent Current I D V IN ≤10V 5 10 mA Output Current I OUT V IN =V OUT +4.5V, T J =25°C 800 950 1200 mA Output Noise Voltage eN B=10Hz~10KHz, T J =25°C 100 µVSupply Voltage Rejection SVRI OUT =40mA, f=120Hz, T J =25°CV IN =V OUT +2.5V, V RIPPLE =1Vpp 60 75 dB Dropout Voltage V DI OUT = 100mA I OUT = 1A 0.32 0.65 0.48 0.88 VVThermal Regulation Ta=25°C, 30ms Pulse 0.01 0.10 %/W For LR1118-2.5VPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT1% 2.475 2.5 2.525Output Voltage V OUTV IN =V OUT +1.5V, I OUT =10mA, T J =25°C 2% 2.450 2.550 V Output VoltageV OUT V IN =(V OUT +2V)~15V, I OUT =0 to 1A 2.45 2.5 2.55 V Line Regulation ∆V OUT V IN =(V OUT +2V)~15V, I OUT =0A 0.1 0.6 % Load Regulation∆V OUT V IN =V OUT +2V, I OUT =0 to 1A 2 3 % Temperature Stability ∆V OUT 0.5 % Long Term Stability ∆V OUT 1000 hrs, T J =125°C 0.3 % Operating Input Voltage V IN I OUT =100mA 15 V Quiescent Current I D V IN ≤10V 5 10 mA Output CurrentI OUT V IN =V OUT +4.5V, T J =25°C 800 950 1200 mA Output Noise Voltage eN B=10Hz~10KHz, T J =25°C 100 µVSupply Voltage Rejection SVRI OUT =40mA, f=120Hz, T J =25°CV IN =V OUT +2.5V, V RIPPLE =1Vpp 60 75 dB Dropout Voltage V DI OUT = 100mA I OUT = 1A 0.16 0.56 0.25 0. V VThermal RegulationTa=25°C, 30ms Pulse 0.01 0.10 %/WELECTRICAL CHARACTERISTICS (Cont.)For LR1118-3.0VPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Output Voltage V OUT V IN =V OUT +1.5V, I OUT =10mA,T J =25°C 2.970 3.0 3.030 VOutput Voltage V OUT V IN =(V OUT +2V)~15V, I OUT =0 to 1A 2.940 3.0 3.060 V Line Regulation ∆V OUT V IN =(V OUT +2V)~15V, I OUT =0A 0.1 0.6 % Load Regulation ∆V OUT V IN =V OUT +2V, I OUT =0 to 1A 2 3 % Temperature Stability ∆V OUT 0.5 % Long Term Stability ∆V OUT 1000 hrs, T J =125°C 0.3 % Operating Input Voltage V IN I OUT =100mA 15 V Quiescent Current I D V IN ≤10V 5 10 mA Output Current I OUT V IN =V OUT +4.5V, T J =25°C 800 950 1200 mA Output Noise Voltage eN B=10Hz ~ 10KHz, T J =25°C 100 µVSupply Voltage Rejection SVRI OUT =40mA, f=120Hz, T J =25°CV IN =V OUT +2.5V, V RIPPLE =1Vpp 60 75 dB Dropout Voltage V DI OUT = 100mA I OUT = 1A 0.11 0.45 0.26 0.65 V VThermal Regulation Ta=25°C, 30ms Pulse 0.01 0.10 %/WFor LR1118-3.3VPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Output Voltage V OUT V IN =V OUT +1.5V, I OUT =10mA,T J =25°C 3.267 3.3 3.333 V Output Voltage V OUT V IN =(V OUT +2V)~15V, I OUT =0 to 1A 3.234 3.3 3.366 V Line Regulation ∆V OUT V IN =(V OUT +2V)~15V, I OUT =0A 0.1 0.6 % Load Regulation ∆V OUT V IN =V OUT +2V, I OUT =0 to 1A 2 3 %Temperature Stability ∆V OUT 0.5 % Long Term Stability ∆V OUT 1000 hrs, T J =125°C 0.3 % Operating Input Voltage V IN I OUT =100mA 15 VQuiescent Current I D V IN ≤10V 5 10 mA Output Current I OUT V IN =V OUT +4.5V, T J =25°C 800 950 1200 mA Output Noise Voltage eN B=10Hz ~ 10KHz, T J =25°C 100 µVSupply Voltage Rejection SVRI OUT =40mA, f=120Hz, T J =25°CV IN =V OUT +2.5V, V RIPPLE =1Vpp 60 75 dB Dropout Voltage V DI OUT = 100mA I OUT = 1A 0.11 0.45 0.26 0.65 VVThermal Regulation Ta=25°C, 30ms Pulse 0.01 0.10 %/WFor LR1118-5.0VPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Output Voltage V OUT V IN =V OUT +1.5V, I OUT =10mA,T J =25°C 4.95 5.0 5.05 V Output Voltage V OUT V IN =(V OUT +2V)~15V, I OUT =0 to 1A 4.90 5.0 5.10 V Line Regulation ∆V OUT V IN =(V OUT +2V)~15V, I OUT =0A 0.1 0.6 % Load Regulation ∆V OUT V IN =V OUT +2V, I OUT =0 to 1A 2 3 % Temperature Stability ∆V OUT 0.5 % Long Term Stability ∆V OUT 1000 hrs, T J =125°C 0.3 % Operating Input Voltage V IN I OUT =100mA 15 V Quiescent Current I D V IN ≤10V 5 10 mA Output Current I OUT V IN =V OUT +4.5V, T J =25°C 800 950 1200 mA Output Noise Voltage eN B=10Hz ~ 10KHz, T J =25°C 100 µVSupply Voltage Rejection SVRI OUT =40mA, f=120Hz, T J =25°CV IN =V OUT +2.5V, V RIPPLE =1Vpp 60 75 dB Dropout Voltage V DI OUT = 100mA I OUT = 1A 0.11 0.45 0.26 0.62 VVThermal Regulation Ta=25°C, 30ms Pulse 0.01 0.10 %/WTYPICAL CHARACTERISTICSReference Volt a ge vs. TemperatureOutput Voltage vs. Temperautre-75Junction Temperature(℃)R e f e r e n c e V o l t a g e (V )Junction Temperature(℃)-75-50-250255075100125150175-50-250255075100125150175Maximum Power Dissipation6510546810Case Temperature (℃)P o w e r (W )24585125。

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R18xx中文资料

R18xx中文资料


Operating Case Temperature Range
I
Electrical/Optical Characteristics
Table 1 . Electrical and Optical Characteristics, C- and L-Band Versions Parameter Wavelength Range : C-band Version L-band Version Total Pump Output Power Degree of Polarization Power Dissipation Effective Noise Figure : C-band Version L-band Version Gain Gain Flatness Po Piss NF Symbol Min 1528 1570 550 10 Typ 5 -2 -3 Max 1562 1612 35 1 Unit nm nm mW W dB dB dB dB
Ideally suited for use in ultralong-haul, high-speed DWDM applications, the versatile Raman Pump Module R18xx Platform is characterized by high output power, low noise, and multiband wavelength selection .
元器件交易网
a8e re
AdLib systems
OCR Evaluation
Preliminary Data Sheet October 2001
Raman Pump Module R18xx Platform
LT1118_Ver1.1

LT1118_Ver1.1

SE G 10 SE G 9 SE G 8 SE G 7 SE G 6 SE G 5 SE G 4 SE G 3 SE G 2 SE G 1
X
XX
xxHL（低四位）
xxHU(高四位)
xxHL(低四位)
B0 B1 B2 B3 B4 B5 B6 B7 B0 B1 B2 B3
00HL 02HL 04HL 06HL 08HL 0AHL 0CHL
4 Ver1.1
地址命令设设置： MSB
B7 B6
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
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1
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1
1
1
B5 B4
无关项，填 0
LED 驱动控制专用电路
LSB
B3 B2 B1 B0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
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1
显示地址
CLK
1 2 `````` 8
DIO
B0 B1 `````` B7
B0 B1 B2 B3
ADS1118IDGST;ADS1118IDGSR;中文规格书,Datasheet资料

ADS1118IDGST;ADS1118IDGSR;中文规格书,Datasheet资料

APPLICATIONS
• Temperature Measurement: – Thermocouple Measurement – Cold Junction Compensation – Thermistor Measurement
• Portable Instrumentation • Factory Automation and Process Controls
Copyright © 2010–2012, Texas Instruments Incorporated
/
ADS1118
SBAS457B – OCTOBER 2010 – REVISED AUGUST 2012

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
Maximum junction temperature
Storage temperature range
ADS1118 –0.3 to +5.5 100, momentary 10, continuous –0.3 to VDD + 0.3 –0.3 to +5.5
±4000
±1000
–40 to +125 +150
PRODUCT FAMILY
DEVICE ADS1118 ADS1018 ADS1115 ADS1114 ADS1113 ADS1015 ADS1014 ADS1013
RJK0305DPB中文资料

RJK0305DPB中文资料

RJK0305DPBSilicon N Channel Power MOS FETPower SwitchingREJ03G1353-0900Rev.9.00Apr 19, 2006Features• High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistanceR DS(on) = 6.7 mΩ typ. (at V GS = 10 V)OutlineAbsolute Maximum Ratings(Ta = 25°C)UnitRatingsItem SymbolDrain to source voltage V DSS 30 VGate to source voltage V GSS +16/-12 VDrain current I D 30 A Drain peak current I D(pulse)Note1 120 ABody-drain diode reverse drain current I DR 30 A Avalanche current I AP Note 2 10 A Avalanche energy E AR Note 2 10 mJ Channel dissipation Pch Note3 45 W Channel to Case Thermal Resistance θch-C 2.78 °C/WChannel temperature Tch 150 °CStorage temperature Tstg –55 to +150 °CNotes: 1. PW ≤ 10 µs, duty cycle ≤ 1%2. Value at Tch = 25°C, Rg ≥ 50 Ω3. Tc = 25°CElectrical Characteristics(Ta = 25°C)Item Symbol Min Typ Max Unit Test ConditionsDrain to source breakdown voltage V (BR)DSS 30 — — V I D = 10 mA, V GS = 0 Gate to source leak current I GSS — — ± 0.1 µA V GS = +16/–12 V, V DS = 0 Zero gate voltage drain current I DSS — — 1 µA V DS = 30 V, V GS = 0 Gate to source cutoff voltage V GS(off) 1.2 — 2.5 V V DS = 10 V, I D = 1 mAR DS(on) — 6.7 8.0 m Ω I D = 15 A, V GS = 10 V Note4 Static drain to source on stateresistance R DS(on) — 10 13 m Ω I D = 15 A, V GS = 4.5 V Note4 Forward transfer admittance |y fs | — 45 — S I D = 15 A, V DS = 10 V Note4 Input capacitance Ciss — 1250 — pF Output capacitance Coss — 530 — pF Reverse transfer capacitanceCrss — 70 — pF V DS = 10 V, V GS = 0,f = 1 MHz Gate Resistance Rg — 0.6 — Ω Total gate chargeQg — 8 — nC Gate to source charge Qgs — 3.6 — nCGate to drain charge Qgd — 1.5 — nCV DD = 10 V, V GS = 4.5 V,I D = 30 A Turn-on delay time t d(on) — 7.0 — ns Rise timet r — 3.0 — nsTurn-off delay timet d(off) — 35 — nsFall timet f — 3.0 — nsV GS = 10 V, I D = 15 A,V DD ≅ 10 V,R L = 0.67 Ω, Rg = 4.7 Ω Body–drain diode forward voltage V DF — 0.85 1.08 V IF = 30 A, V GS = 0 Note4Body–drain diode reverse recovery timet rr — 30 — ns IF = 30 A, V GS = 0di F / dt = 100 A/ µsNotes: 4. Pulse testMain CharacteristicsPackage DimensionsOrdering InformationPart Name Quantity Shipping ContainerRJK0305DPB-00-J0 2500pcs TapingNote: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. RENESAS SALES OFFICESRefer to "/en/network" for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.ATel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong KongTel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, TaiwanTel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, KoreaTel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: <603> 7955-9390, Fax: <603> 7955-9510© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.。