1N4148W

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1N4148WDocument Number 85748Rev. 3, 22-May-03Vishay Semiconductors117431Small-Signal DiodeFeatures•These diodes are also available in other case styles including the DO-35 case with the type des-ignation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148. •Silicon Epitaxial Planar Diode •Fast switching diodesMechanical DataCase: SOD-123 Plastic Case Weight: approx. 10 mg Marking: A2Packaging Codes/Options:D3 / 10k per 13" reel (8 mm tape), 30k/box D4 / 3k per 7" reel (8 mm tape), 30k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1)Valid provided that electrodes are kept at ambient temperature.Maximum Thermal ResistanceT amb = 25°C, unless otherwise specified1)Valid provided that electrodes are kept at ambient temperature.ParameterT est condition Symbol Value Unit Reverse voltage V R 75V Peak reverse voltageV RM100V Average rectified current half wave rectification with resistive load f ≥ 50 HzI F(AV)1501)mA Surge forward current t < 1 s and T j = 25°CI FSM 500mA Power dissipationP tot4001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R θJA 4501)°C/W Junction temperature T j 150°C Storage temperatureT S- 65 to + 150°C1N4148WVishay Semiconductors Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedRectification Efficiency Measurement CircuitParameterTest conditionSymbol MinTyp.Max Unit Forward voltage I F = 10 mA V F1.0V Leakage currentV R = 20 V 25nA V R = 75 V5.0µA V R = 20 V , T J = 150°C50µA CapacitanceV F = V R = 0 VC tot 4pF Voltage rise when switching ON (tested with 50 mA pulses)tested with 50 mA pulses, t p = 0.1 µs, rise time < 30 ns,f p = (5 to 100) kHz V fr2.5nsReverse recovery time I F = 10 mA, I R = 1 mA, V R = 6 V , R L = 100 Ωt rr 4nsRectification efficiencyf = 100 MHz, V RF = 2 Vην0.45Document Number 85748 Rev. 3, 3 4Document Number 85748Rev. 3, 22-May-031N4148WVishay SemiconductorsPackage Dimensions in Inches (mm)1N4148WDocument Number 85748Rev. 3, 22-May-03Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423This datasheet has been download from: Datasheets for electronics components.。