GZF9V1C中文资料
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Document Number 17249Zener DiodesFeatures•Silicon Planar Power Zener Diodes. •Low profile surface-mount package. •Low leakage current •High temperature soldering:260°C/10 sec. at terminalsMechanical DataCase: JEDEC DO-219AB (SMF ®) Plastic CasePackaging codes/options:GS18 - 10 K per 13 " reel, (8 mm tape), 50 K/box GS08 - 3 K per 7 " reel, (8 mm tape), 30 K/box Weight: approx. 0.01 gAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)Thermal CharacteristicsT amb = 25°C, unless otherwise specified1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)ParameterTest conditionSymbolValue UnitZener current (see Table "Characteristics")see page 2Power dissipationT A = 25°CP tot8001)mW ParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air1)R θJA 180K/W Maximum junction temperature T j 150°C Storage temperature rangeT STG- 55 to + 150°C Document Number 85769Electrical CharacteristicsMaximum V F = 1.2 V at I F = 200 mA1) Pulse test: tp ≤ 5 msPartnumberMarking CodeZener Voltage Range 1)Differential Resistance Temperature Coefficient T est Current Reverse Current at Reverse Voltage V Z @ I ZTr dif @ I ZαZ @ I Z I ZT I R V R VΩ%/°C mA µA Vminmax typ max min max max GZF3V6C W5 3.4 3.848-0.14-0.041001001GZF3V9C W6 3.7 4.148-0.14-0.04100501GZF4V3C W74 4.647-0.12-0.02100251GZF4V7C W8 4.4537-0.10100101GZF5V1C W9 4.8 5.436-0.08-0.210051GZF5V6C WA 5.2624-0.040.04100102GZF6V2C WB 5.8 6.623-0.010.0610052GZF6V8C WC 6.47.21300.07100103GZF7V5C WD 77.91200.07100503GZF8V2C WE 7.78.7120.030.08100103GZF9V1C WF 8.59.6240.030.0850105GZF10C WG 9.410.6240.050.095077.5GZF11C WH 10.411.6470.050.15048.2GZF12C WI 11.412.7470.050.15039.1GZF13C WK 12.414.15100.050.150210GZF15C WL 13.815.65100.050.150111GZF16C WM 15.317.16150.060.1125112GZF18C WN 16.819.16150.060.1125113GZF20C WO 18.821.26150.060.1125115GZF22C WP 20.823.36150.060.1125116GZF24C WR 22.825.67150.060.1125118GZF27C WS 25.128.97150.060.1125120GZF30C WT 28328150.060.1125122GZF33C WU 31358150.060.1125124GZF36C WW 343821400.060.1110127GZF39C WX 374121400.060.1110130GZF43C WY 404624450.070.1210133GZF47C WZ 445024450.070.1210136GZF51C X1485425600.070.1210139GZF56C X2526025600.070.1210143GZF62C X3586625800.080.1310147GZF68C X4647225800.080.1310151GZF75C X57079301000.080.1310156GZF82C X67787301000.080.1310162GZF91CX78596602000.090.135168Document Number Typical Characteristics (T amb = 25 °C unless otherwise specified)Figure 1. Forward characteristicsFigure2. Admissible Power Dissipation vs. Ambient TemperatureFigure3. Capacitance vs. Zener Voltage17364I V F0.410101010101010101-2-3-53mAP80060040020017365V217366Package Dimensions in mm Document Number 85769Blistertape für SMFDocument Number Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85769。