下载文档原格式
1/23L6206September 2003 s OPERATING SUPPLY VOLTAGE FROM 8 TO 52V s 5.6A OUTPUT PEAK CURRENT (2.8A DC)s R DS(ON) 0.3Ω TYP. VALUE @ T j = 25 °C s OPERATING FREQUENCY UP TO 100KHz sPROGRAMMABLE HIGH SIDE OVERCURRENT DETECTION AND PROTECTION s DIAGNOSTIC OUTPUT s PARALLELED OPERATIONs CROSS CONDUCTION PROTECTION s THERMAL SHUTDOWNs UNDER VOLTAGE LOCKOUTsINTEGRATED FAST FREE WHEELING DIODESTYPICAL APPLICATIONSs BIPOLAR STEPPER MOTOR s DUAL OR QUAD DC MOTORDESCRIPTIONThe L6206 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower-BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2),PowerSO36 and SO24 (20+2+2) packages, the L6206 features thermal shutdown and a non-dissipa-tive overcurrent detection on the high side Power MOSFETs plus a diagnostic output that can be easily used to implement the overcurrent protection.BLOCK DIAGRAMDMOS DUAL FULL BRIDGE DRIVERL62062/23ABSOLUTE MAXIMUM RATINGSRECOMMENDED OPERATING CONDITIONSSymbol ParameterTest conditionsValue Unit V S Supply VoltageV SA = V SB = V S60V V ODDifferential Voltage between VS A , OUT1A , OUT2A , SENSE A and VS B , OUT1B , OUT2B , SENSE BV SA = V SB = V S = 60V;V SENSEA = V SENSEB = GND 60VOCD A ,OCD B OCD pins Voltage Range -0.3 to +10V PROGCL A ,PROGCL B PROGCL pins Voltage Range -0.3 to +7V V BOOT Bootstrap Peak VoltageV SA = V SB = V SV S + 10V V IN ,V EN Input and Enable Voltage Range -0.3 to +7V V SENSEA, V SENSEB Voltage Range at pins SENSE A and SENSE B-1 to +4V I S(peak)Pulsed Supply Current (for each V S pin), internally limited by the overcurrent protection V SA = V SB = V S ;t PULSE < 1ms 7.1AI S RMS Supply Current (for each V S pin)V SA = V SB = V S 2.8A T stg , T OPStorage and Operating Temperature Range-40 to 150°CSymbol ParameterTest ConditionsMIN MAX Unit V S Supply VoltageV SA = V SB = V S852V V ODDifferential Voltage Between VS A , OUT1A , OUT2A , SENSE A and VS B , OUT1B , OUT2B , SENSE BV SA = V SB = V S ;V SENSEA = V SENSEB 52VV SENSEA, V SENSEB Voltage Range at pins SENSE A and SENSE B (pulsed t W < t rr )(DC)-6-161V V I OUT RMS Output Current2.8A T j Operating Junction T emperature -25+125°C f swSwitching Frequency100KHz3/23L6206THERMAL DATA(5) The slug is internally connected to pins 1,18,19 and 36 (GND pins).Symbol DescriptionPowerDIP24SO24PowerSO36Unit R th-j-pins MaximumThermal Resistance Junction-Pins 1814-°C/W R th-j-case Maximum Thermal Resistance Junction-Case --1°C/W R th-j-amb1MaximumThermal Resistance Junction-Ambient 1(1)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the bottom side of 6 cm 2 (with a thickness of 35 µm).4351-°C/W R th-j-amb1Maximum Thermal Resistance Junction-Ambient 2(2)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6 cm 2 (with a thickness of 35 µm).--35°C/W R th-j-amb1MaximumThermal Resistance Junction-Ambient 3(3)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6 cm 2 (with a thickness of 35 µm), 16 via holes and a ground layer.--15°C/W R th-j-amb2Maximum Thermal Resistance Junction-Ambient 4(4)Mounted on a multi-layer FR4 PCB without any heat sinking surface on the board.587762°C/WL62064/23PIN DESCRIPTIONPACKAGENameTypeFunctionSO24/PowerDIP24PowerSO36PIN #PIN #110IN1A Logic input Bridge A Logic Input 1.211IN2A Logic input Bridge A Logic Input 2.312SENSE A Power Supply Bridge A Source Pin. This pin must be connected to Power Ground directly or through a sensing power resistor.413OCD AOpen Drain OutputBridge A Overcurrent Detection and thermal protection pin. An internal open drain transistor pulls to GND whenovercurrent on bridge A is detected or in case of thermal protection.515OUT1A Power OutputBridge A Output 1.6, 7,18, 191, 18,19, 36GNDGNDSignal Ground terminals. In Power DIP and SO packages, these pins are also used for heat dissipation toward the PCB.822OUT1B Power Output Bridge B Output 1.924OCD BOpen Drain OutputBridge B Overcurrent Detection and thermal protection pin. An internal open drain transistor pulls to GND whenovercurrent on bridge B is detected or in case of thermal protection.1025SENSE B Power Supply Bridge B Source Pin. This pin must be connected to Power Ground directly or through a sensing power resistor.1126IN1B Logic Input Bridge B Input 11227IN2B Logic Input Bridge B Input 21328PROGCL BR PinBridge B Overcurrent Level Programming. A resistor connected between this pin and Ground sets theprogrammable current limiting value for the bridge B. By connecting this pin to Ground the maximum current is set. This pin cannot be left non-connected.1429EN B Logic InputBridge B Enable. LOW logic level switches OFF all Power MOSFETs of Bridge B.If not used, it has to be connected to +5V.1530VBOOT Supply Voltage Bootstrap Voltage needed for driving the upper Power MOSFETs of both Bridge A and Bridge B.1632OUT2B Power Output Bridge B Output 2.1733VS B Power Supply Bridge B Power Supply Voltage. It must be connected to the supply voltage together with pin VS A .204VS A Power Supply Bridge A Power Supply Voltage. It must be connected to the supply voltage together with pin VS B .215OUT2APower OutputBridge A Output 2.5/23L6206PACKAGENameTypeFunctionSO24/PowerDIP24PowerSO36PIN #PIN #227VCP Output Charge Pump Oscillator Output.238EN ALogic InputBridge A Enable. LOW logic level switches OFF all Power MOSFETs of Bridge A.If not used, it has to be connected to +5V.249PROGCL AR PinBridge A Overcurrent Level Programming. A resistor connected between this pin and Ground sets theprogrammable current limiting value for the bridge A. By connecting this pin to Ground the maximum current is set. This pin cannot be left non-connected.ELECTRICAL CHARACTERISTICS(T amb = 25 °C, V s = 48V, unless otherwise specified)SymbolParameter Test ConditionsMin Typ Max Unit V Sth(ON)Turn-on Threshold 6.677.4V V Sth(OFF)Turn-off Threshold5.66 6.4V I S Quiescent Supply Current All Bridges OFF;T j = -25°C to 125°C (6)510mA T j(OFF)Thermal Shutdown Temperature165°COutput DMOS Transistors R DS(ON)High-Side Switch ON Resistance T j = 25 °C0.340.4ΩT j =125 °C (6)0.530.59ΩLow-Side Switch ON ResistanceT j = 25 °C 0.280.34ΩT j =125 °C (6)0.470.53ΩI DSSLeakage CurrentEN = Low; OUT = V S 2mA EN = Low; OUT = GND-0.15mASource Drain Diodes V SD Forward ON Voltage I SD = 2.8A, EN = LOW 1.15 1.3V t rr Reverse Recovery Time I f = 2.8A300ns t frForward Recovery Time200nsLogic Input V IL Low level logic input voltage -0.30.8V V IH High level logic input voltage 27V I ILLow Level Logic Input CurrentGND Logic Input Voltage-10µAPIN DESCRIPTION (continued)L62066/23(7)See Fig. 1.(8)See Fig. 2.I IH High Level Logic Input Current 7V Logic Input Voltage10µA V th(ON)Turn-on Input Threshold 1.8 2.0V V th(OFF)Turn-off Input Threshold 0.8 1.3V V th(HYS)Input Threshold Hysteresis0.250.5VSwitching Characteristics t D(on)EN Enable to out turn ON delay time (7)I LOAD =2.8A, Resistive Load 100250400ns t D(on)IN Input to out turn ON delay time I LOAD =2.8A, Resistive Load(dead time included) 1.6µs t RISE Output rise time (7)I LOAD =2.8A, Resistive Load40250ns t D(off)EN Enable to out turn OFF delay time (7)I LOAD =2.8A, Resistive Load 300550800ns t D(off)IN Input to out turn OFF delay time I LOAD =2.8A, Resistive Load 600ns t FALL Output Fall Time (7)I LOAD =2.8A, Resistive Load40250ns t dt Dead Time Protection 0.51µs f CPCharge pump frequency-25°C<T j <125°C0.61MHzOver Current Detection ELECTRICAL CHARACTERISTICS (continued)(T amb = 25 °C, V s = 48V, unless otherwise specified)Symbol Parameter Test ConditionsMinTypMax UnitL62067/23L62068/23CIRCUIT DESCRIPTIONPOWER STAGES and CHARGE PUMPThe L6206 integrates two independent Power MOS Full Bridges. Each Power MOS has an Rd-son=0.3ohm (typical value @ 25°C), with intrinsic fast freewheeling diode. Cross conduction protection is achieved using a dead time (td = 1µs typical) be-tween the switch off and switch on of two Power MOS in one leg of a bridge.Using N Channel Power MOS for the upper transis-tors in the bridge requires a gate drive voltage above the power supply voltage. The Bootstrapped (Vboot)supply is obtained through an internal Oscillator and few external components to realize a charge pump circuit as shown in Figure 3. The oscillator output (VCP) is a square wave at 600kHz (typical) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table1.Table 1. Charge Pump External ComponentsValuesLOGIC INPUTSPins IN1A , IN2A , IN1B , IN2B , EN A and EN B are TTL/CMOS and uC compatible logic inputs. The internal structure is shown in Fig. 4. Typical value for turn-on and turn-off thresholds are respectively Vthon=1.8V and Vthoff = 1.3V.Pins EN A and EN B are commonly used to implement Overcurrent and Thermal protection by connecting them respectively to the outputs OCD A and OCD B ,which are open-drain outputs. If that type of connec-tion is chosen, some care needs to be taken in drivingthese pins. Two configurations are shown in Fig. 5and Fig. 6. If driven by an open drain (collector) struc-ture, a pull-up resistor R EN and a capacitor C EN are connected as shown in Fig. 5. If the driver is a stan-dard Push-Pull structure the resistor R EN and the ca-pacitor C EN are connected as shown in Fig. 6. The resistor R EN should be chosen in the range from 2.2k Ω to 180K Ω. Recommended values for R EN and C EN are respectively 100K Ω and 5.6nF. More infor-mation on selecting the values is found in the Over-current Protection section.Figure 5. EN A and EN B Pins Open CollectorTRUTH TABLEX = Don't careHigh Z = High Impedance OutputC BOOT 220nF C P 10nF R P 100ΩD11N4148D21N4148INPUTSOUTPUTS EN IN1IN2OUT1OUT2L X X High Z High Z H L L GND GND H H L Vs GND H L H GND Vs HHHVsVs9/23L6206NON-DISSIPATIVE OVERCURRENT DETECTION AND PROTECTIONIn addition to the PWM current control, an overcurrent detection circuit (OCD) is integrated. This circuit can be used to provides protection against a short circuit to ground or between two phases of the bridge as well as a roughly regulation of the load current. With this internal over current detection, the external current sense resis-tor normally used and its associated power dissipation are eliminated. Fig. 7 shows a simplified schematic of the overcurrent detection circuit for the Bridge A. Bridge B is provided of an analogous circuit.To implement the over current detection, a sensing element that delivers a small but precise fraction of the out-put current is implemented with each high side power MOS. Since this current is a small fraction of the output current there is very little additional power dissipation. This current is compared with an internal reference cur-rent I REF . When the output current reaches the detection threshold Isover the OCD comparator signals a fault condition. When a fault condition is detected, an internal open drain MOS with a pull down capability of 4mA connected to OCD pin is turned on. Fig. 8 shows the OCD operation.This signal can be used to regulate the output current simply by connecting the OCD pin to EN pin and adding an external R-C as shown in Fig.7. The off time before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs.I REF and, therefore, the output current detection threshold are selectable by R CL value, following the equations:–Isover = 5.6A ±30% at -25°C < T j < 125°C if R CL = 0Ω (PROGCL connected to GND)–Isover = ±10% at -25°C < T j < 125°C if 5K Ω < R CL < 40k ΩFig. 9 shows the output current protection threshold versus R CL value in the range 5k Ω to 40k Ω.The Disable Time t DISABLE before recovering normal operation can be easily programmed by means of the accu-rate thresholds of the logic inputs. It is affected whether by C EN and R EN values and its magnitude is reported inFigure 10. The Delay Time t DELAY before turning off the bridge when an overcurrent has been detected depends only by C EN value. Its magnitude is reported in Figure 11.C EN is also used for providing immunity to pin EN against fast transient noises. Therefore the value of C EN should be chosen as big as possible according to the maximum tolerable Delay Time and the R EN value should be chosen according to the desired Disable Time.The resistor R EN should be chosen in the range from 2.2K Ω to 180K Ω. Recommended values for R EN and C EN are respectively 100K Ω and 5.6nF that allow obtaining 200µs Disable Time.22100R CL----------------L620610/2311/23THERMAL PROTECTIONIn addition to the Ovecurrent Detection, the L6206 integrates a Thermal Protection for preventing the device destruction in case of junction over temperature. It works sensing the die temperature by means of a sensible element integrated in the die. The device switch-off when the junction temperature reaches 165°C (typ. value) with 15°C hysteresis (typ. value).12/23APPLICATION INFORMATIONA typical application using L6206 is shown in Fig. 12. Typical component values for the application are shown in Table 2. A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power pins (VS A and VS B) and ground near the L6206 to improve the high frequency filtering on the power supply and reduce high frequency transients generated by the switching. The capacitors connected from the EN A/OCD A and EN B/OCDB nodes to ground set the shut down time for the Brgidge A and Bridge B respectively when an over current is detected (see Overcurrent Protection). The two current sources (SENSE A and SENSE B) should be connected to Power Ground with a trace length as short as possible in the layout. To increase noise immu-nity, unused logic pins are best connected to 5V (High Logic Level) or GND (Low Logic Level) (see pin descrip-tion). It is recommended to keep Power Ground and Signal Ground separated on PCB.Table 2. Component Values for Typical ApplicationC1100uF D11N4148C2100nF D21N4148C BOOT220nF R CLA5KΩC P10nF R CLB5KΩC ENA 5.6nF R ENA100kΩC ENB 5.6nF R ENB100kΩC REF68nF R P100Ω13/23PARALLELED OPERATIONThe outputs of the L6206 can be paralleled to increase the output current capability or reduce the power dissi-pation in the device at a given current level. It must be noted, however, that the internal wire bond connections from the die to the power or sense pins of the package must carry current in both of the associated half bridges. When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak current rating is not increased since the total current must still flow through one bond wire on the power supply or sense pin. In addition the over current detection senses the sum of the current in the upper devices of each bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-tion threshold.For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge 1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 13. The current in the two devices connected in parallel will share very well since the R DS(ON) of the devices on the same die is well matched. When connected in this configuration the over current detection circuit, which senses the current in each bridge (A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with the lowest threshold will trip first. With the enables connected in parallel, the first detection of an over current in either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current equally, the resulting over current detection threshold will be twice the minimum threshold set by the resistors R CLA or R CLB in figure 13. It is recommended to use R CLA = R CLB.In this configuration the resulting Bridge has the following characteristics.- Equivalent Device: FULL BRIDGE- R DS(ON) 0.15Ω Typ. Value @ T J = 25°C- 5.6A max RMS Load Current- 11.2A max OCD Threshold14/23To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge 2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 14. In this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense pins so the dissipation in the device will be reduced, but the peak current rating is not increased.When connected in this configuration the over current detection circuit, senses the sum of the current in upper devices connected in parallel. With the enables connected in parallel, an over current will turn of both bridges. Since the circuit senses the total current in the upper devices, the over current threshold is equal to the threshold set the resistor R CLA or R CLB in figure 14. R CLA sets the threshold when outputs OUT1A and OUT2A are high and resistor R CLB sets the threshold when outputs OUT1B and OUT2B are high.It is recommended to use R CLA = R CLB.In this configuration, the resulting bridge has the following characteristics.- Equivalent Device: FULL BRIDGE- R DS(ON) 0.15Ω Typ. Value @ T J = 25°C- 2.8A max RMS Load Current- 5.6A max OCD Threshold15/23It is also possible to parallel the four Half Bridges to obtain a simple Half Bridge as shown in Fig. 15. In this configuration the, the over current threshold is equal to twice the minimum threshold set by the resistors R CLA or R CLB in Figure 15. It is recommended to use R CLA = R CLB.The resulting half bridge has the following characteristics.- Equivalent Device: HALF BRIDGE- R DS(ON) 0.075Ω Typ. Value @ T J = 25°C- 5.6A max RMS Load Current- 11.2A max OCD Threshold16/23OUTPUT CURRENT CAPABILITY AND IC POWER DISSIPATIONIn Fig. 16 and Fig. 17 are shown the approximate relation between the output current and the IC power dissipa-tion using PWM current control driving two loads, for two different driving types:–One Full Bridge ON at a time (Fig.16) in which only one load at a time is energized.–Two Full Bridges ON at the same time (Fig.17) in which two loads at the same time are energized. For a given output current and driving type the power dissipated by the IC can be easily evaluated, in order to establish which package should be used and how large must be the on-board copper dissipating area to guar-antee a safe operating junction temperature (125°C maximum).THERMAL MANAGEMENTIn most applications the power dissipation in the IC is the main factor that sets the maximum current that can be de-liver by the device in a safe operating condition. Therefore, it has to be taken into account very carefully. Besides the available space on the PCB, the right package should be chosen considering the power dissipation. Heat sinking can be achieved using copper on the PCB with proper area and thickness. Figures 19, 20 and 21 show the Junction-to-Ambient Thermal Resistance values for the PowerSO36, PowerDIP24 and SO24 packages.For instance, using a PowerSO package with copper slug soldered on a 1.5 mm copper thickness FR4 board with 6cm2 dissipating footprint (copper thickness of 35µm), the R th j-amb is about 35°C/W. Fig. 18 shows mount-ing methods for this package. Using a multi-layer board with vias to a ground plane, thermal impedance can be reduced down to 15°C/W.17/2318/23Figure 22. Typical Quiescent Current vs.Supply VoltageFigure 23. Normalized Typical QuiescentFigure 24. Typical Low-Side R DS(ON) vs.Figure 25. Typical High-Side RDS(ON) vs.Supply VoltageFigure 26. Normalized R DS(ON) vs.JunctionFigure 27. Typical Drain-Source DiodeForward ON Characteristic19/2320/23L620621/23L620622/23L6206 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2003 STMicroelectronics - All rights reservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States23/23。
高频课程设计报告_调频发射机目录1. 内容概述 (2)1.1 课程背景 (3)1.2 报告目的 (3)1.3 报告结构 (4)2. 调频发射机概述 (5)2.1 调频通信原理 (6)2.2 调频发射机组成 (7)3. 调频发射机设计要求 (8)3.1 系统指标 (10)3.2 性能要求 (11)4. 设计方案与实现 (11)4.1 发射机结构设计 (13)4.2 高频电路设计 (14)4.3 调制和解调电路设计 (15)4.4 电源模块设计 (17)5. 调试与优化 (19)5.1 测试方法 (21)5.2 调试过程 (22)5.3 性能优化 (23)6. 测试结果与分析 (25)6.1 发射功率 (26)6.2 频谱纯度 (27)6.3 调制质量 (28)6.4 系统稳定性 (30)7. 结论与展望 (31)7.1 设计总结 (32)7.2 存在问题 (34)7.3 未来改进方向 (35)1. 内容概述本报告详细介绍了调频发射机的高频课程设计，围绕其工作原理、设计要点、实现路径以及未来改进方向展开深入探讨。
从调频发射机的基本原理出发，我们讨论了信号调制、载波频率的调整以及功率放大等关键技术点。
报告紧密结合实际工程需求，详尽阐述了调频发射机的工作著魔步骤和各个模块的功能设计，包括射频前端、调制器、功率放大器等核心部件。
在分析过程中，我们考虑了复杂信号环境下的抗干扰性设计，确保信号传输的稳定性和清晰度。
通过对调频发射机的仿真和数据分析，本报告优化了不同负载条件下的性能表现，为实际生产提供了有效的理论支持。
本课程设计报告还包括了项目实施过程中的遇到的挑战和解决方案，同时讨论了调频发射机在现代无线通信技术中的应用及其市场潜力。
报告最后展望了的未来科技发展趋势，提出了进一步提升调频发射机性能的潜在技术和创新方向。
通过本报告的学习与应用，读者能够获得关于高频调频发射机设计过程的全面了解，并为后续相关研究提供有益的参考和指导。
UM 10418基于UBA2211的230V 12W CFL演示板版本.2.02——2011 01 10 用户手册文档信息摘要该文档为基于UBA2211的12W演示板用户手册修订历史v.1 10101026 第一版1. 简介UBA2211是一款耐高压集成控制芯片，外部只需增加少量的元件，就能驱动和控制紧凑型荧光灯（CFLs）。
它能为灯正常预热、点火和工作提供所必要的功能。
其内部集成了相关必要的保护功能，具有很高的性价比。
该用户手册将介绍基于UBA2211 230V 12W演示板的应用。
2. 特性2.1 系统集成度●集成半桥功率MOSFET- UBA2211A：导通阻抗13.5欧姆：最大点火电流：0.9A- UBA2211B: 导通阻抗0欧姆：最大点火电流1.35A- UBA2211C: 导通阻抗6.6欧姆：最大点火电流：1.85A●集成自举二极管●集成低压供电电路●集成电平转换电路2.2 灯管寿命●可调的预热时间和点火时间●可调的预热电流，不受电源电压影响●支持冷启动，最小辉光放电时间控制●可调灯功率●灯功率不受电源电压变化影响2.3 安全性●安全启动功能● 50%精确占空比●欠电压自锁保护●电感饱和保护●过热保护●电容模式保护● EOL 保护●灯开路保护2.4 应用简单●可调工作频率，方便与各种灯管匹配3. 电路图典型应用电路如图1图1 紧凑型荧光灯典型应用电路4. 规格说明UBA2211演示板用来驱动12W功率的灯管。
规格说明如下所示：● 230V（AC）−输入电压范围：220V到240V；50Hz−输入功率：230V（AC）下12W−输入电流：230V（AC）下80mA−功率因数：>0.58−正常运行频率：42kHz− 800ms的预热时间●灯管− Baishi 3U 12W灯管−其他灯电压70V，电流150mA的灯管5. 实际应用230V（AC）电源输入和灯管四个输出连接如图2所示：图2 12W CFL UBA2211实际应用6. 电路说明UBA2211为一款集成电路控制芯片，用于驱动紧凑型荧光灯。
CC6206全极性锁存型微功耗霍尔效应开关概述CC6206是一颗微功耗、高灵敏度全极性、并具有闩锁输出的霍尔开关传感装置，可直接取代传统的磁簧开关。
特别适用于使用电池电源的便携式电子产品，如行动电话、无绳电话、笔记型电脑、PDA 等。
CC6206具有磁场辨别全极性，亦即只要磁场北极或南极靠近即可启动，磁场撤消后，输出便关闭。
与其他一般霍尔传感装置不同的是并不要特定南极或北极才可以动作，减少了组装时辨别磁极的困扰。
CC6206内部电路包含了霍尔薄片、电压稳压模块、信号放大处理模块、动态失调消除模块、锁存模块以及CMOS 输出级。
由于CC6206使用先进的Bi-CMOS 工艺，整体优化了的线路结构，使得产品获得极低的输入误差反馈。
产品采用了动态失调消除技术，该技术能够消除由封装应力，热应力，以及温度梯度所造成的失调电压，提高器件的一致性。
同时该产品采用及其小型化的封装工艺，使得产品更具极高的性能和市场优势。
CC6206提供TSOT23-3和TO-92S 两种封装，工作温度范围为-40~150℃。
功能框图特点◆工作范围宽，2~5V ◆微功耗◆工作频率为5.5Hz◆全极性输出，对南极和北极磁场均可响应◆良好的温度稳定性◆开关点漂移低◆ESD （HBM ）6000V ◆TSOT23-3小尺寸封装应用◆仪器仪表◆PDA ◆笔记本电脑开关输出vs.磁场极性管脚描述极限参数典型应用电路f (H z )VDD(V)VDD(V)扫描频率vs.工作电压静态电流vs.工作电压B (G s )Ta B (G s )VDD(V)磁感应点vs.环境温度磁感应点vs.工作电压(1)TO-92SpackageHall 感应点位置注意:所有单位均为毫米。
打标信息:第一行:CC6206-产品名称第二行:XXYYWWXX –代码YY –封装年份的后两位数WW –封装时的星期数TSOT23-3packageHall 感应点位置注意:所有单位均为毫米。
DX系列中波发射机典型故障速查表
（本附录故障分析以762厂AM1035-Ⅱ型发射机为例）表1：无法正常开机故障
表1续：无法正常开机故障
表3：电源故障
表3续：电源故障
表4：联锁故障
表5：自动掉高压故障
表6：过流故障
表7：激励器故障
表8：射频包络故障
表8：射频包络故障
表9：烧功放板故障
表9续：烧功放板故障
表9续：烧功放板故障
表10：冷却故障
表10续：冷却故障
表11：缓冲放大故障
表12：预推动大故障
表13：功率异常故障
表13续：功率异常故障
表13续：功率异常故障
表14：调制编码板故障
表15：直流稳压B+/B-故障
表15续：直流稳压B+/B-故障
表16：失真故障
表17：欠激励、过激励故障
表17续：欠激励、过激励故障
表17续：欠激励、过激励故障
表18：转换错误故障
表18续：转换错误故障
表19：网络驻波故障
表19续：网络驻波故障
表19续：网络驻波故障
表20：其它故障
表20续：其它故障。
