最新-闪速存储器芯片K9F642019系列的典型应用 精品

Product IntroductionThe K9F1G08U0B is a 1,056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2,112x8 columns. Spare 64x8 col-umns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodat-ing data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1,024 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1G08U0B.The K9F1G08U0B has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 132M byte physical space requires 28 addresses, thereby requiring four cycles for addressing : 2 cycles of column address, 2 cycles of row address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase oper-ation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the com-mand register. Table 1 defines the specific commands of the K9F1G08U0B.In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased.Table 1. Command SetsNOTE : 1. Random Data Input/Output can be executed in a page.2. Read EDC Status is only available on Copy Back operation.Caution : Any undefined command inputs are prohibited except for above command set of Table 1.Function1st Cycle 2nd CycleAcceptable Command during BusyRead00h 30h Read for Copy Back 00h 35h Read ID 90h -Reset FFh -OPage Program 80h 10h Copy-Back Program 85h 10h Block Erase60h D0h Random Data Input (1)85h -Random Data Output (1)05h E0hRead Status 70h O Read EDC Status (2)7BhODC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.)NOTE : 1. V IL can undershoot to -0.4V and V IH can overshoot to V CC +0.4V for durations of 20 ns or less.2. Typical value is measured at Vcc=3.3V, T A =25°C. Not 100% tested.ParameterSymbol Test ConditionsK9F1G08U0B(3.3V)UnitMinTypMaxOperating CurrentPage Read with Serial Access I CC 1tRC=25nsCE=V IL, I OUT =0mA-1530mAProgram I CC 2-EraseI CC 3-Stand-by Current(TTL)I SB 1CE=V IH , WP=0V/V CC --1Stand-by Current(CMOS)I SB 2CE=V CC -0.2, WP=0V/V CC -1050µAInput Leakage Current I LI V IN =0 to Vcc(max)--±10Output Leakage Current I LO V OUT =0 to Vcc(max)--±10Input High VoltageV IH (1)-0.8xVcc -V CC +0.3V Input Low Voltage, All inputs V IL (1)--0.3-0.2xVccOutput High Voltage Level V OH K9F1G08U0A :I OH =-400µA 2.4--Output Low Voltage Level V OLK9F1G08U0A :I OL =2.1mA--0.4Output Low Current(R/B)I OL (R/B)K9F1G08U0A :V OL =0.4V810-mA RECOMMENDED OPERATING CONDITIONS(Voltage reference to GND, K9F1G08U0B-XCB0 :T A =0 to 70°C, K9F1G0808B-XIB0:T A =-40 to 85°C)ParameterSymbol K9F1G08U0B(3.3V)UnitMin Typ.Max Supply Voltage V CC 2.7 3.3 3.6V Supply VoltageV SSV ABSOLUTE MAXIMUM RATINGSNOTE :1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V CC +0.3V which, during transitions, may overshoot to V CC +2.0V for periods <20ns.2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.ParameterSymbol Rating Unit3.3V Device Voltage on any pin relative to VSSV CC-0.6 to + 4.6VV IN -0.6 to + 4.6V I/O-0.6 to Vcc + 0.3 (< 4.6V)Temperature Under BiasK9XXG08XXB-XCB0T BIAS -10 to +125°C K9XXG08XXB-XIB0-40 to +125Storage Tempera-tureK9XXG08XXB-XCB0T STG-65 to +150°CK9XXG08XXB-XIB0Short Circuit CurrentI OS5mACAPACITANCE (T A =25°C, V CC =3.3V, f=1.0MHz)NOTE : Capacitance is periodically sampled and not 100% tested.ItemSymbol Test ConditionMin Max Unit Input/Output Capacitance C I/O V IL =0V -10pF Input CapacitanceC INV IN =0V-10pFVALID BLOCKNOTE :1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.ParameterSymbol Min Typ.Max Unit K9F1G08U0BN VB1,004-1,024BlocksMODE SELECTIONNOTE : 1. X can be V IL or V IH.2. WP should be biased to CMOS high or CMOS low for standby.CLE ALE CE WERE WP ModeH L L H X Read Mode Command Input L H L H X Address Input(4clock)H L L H H Write ModeCommand Input L H L H H Address Input(4clock)L L L HH Data Input L L L H XData Output X X X X H X During Read(Busy)X X X X X H During Program(Busy)X X X X X H During Erase(Busy)X X (1)X X X L Write Protect XXHXX0V/V CC (2)Stand-byAC TEST CONDITION(K9F1G08U0B-XCB0 :TA=0 to 70°C, K9F1G08U0B-XIB0:TA=-40 to 85°C, K9F1G08U0B : Vcc=2.7V~3.6V unless otherwise noted)ParameterK9F1G08U0B Input Pulse Levels 0V to Vcc Input Rise and Fall Times 5ns Input and Output Timing Levels Vcc/2Output Load1 TTL GATE and CL=50pF。

General DescriptionMicron NAND Flash devices include an asynchronous data interface for high-perform-ance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfercommands, address, and data. There are five control signals used to implement theasynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals controlhardware write protection and monitor device status (R/B#).This hardware interface creates a low pin-count device with a standard pinout that re-mains the same from one density to another, enabling future upgrades to higher densi-ties with no board redesign.A target is the unit of memory accessed by a chip enable signal. A target contains one ormore NAND Flash die. A NAND Flash die is the minimum unit that can independentlyexecute commands and report status. A NAND Flash die, in the ONFI specification, isreferred to as a logical unit (LUN). There is at least one NAND Flash die per chip enablesignal. For further details, see Device and Array Organization.Signal Descriptions and AssignmentsTable 1: Asynchronous Signal DefinitionsNotes: 1.See Device and Array Organization for detailed signal connections.2.See Asynchronous Interface Bus Operation for detailed asynchronous interface signaldescriptions.PROGRAM PAGE TWO-PLANE (80h-11h)The PROGRAM PAGE TWO-PLANE (80h-11h) command enables the host to input datato the addressed plane's cache register and queue the cache register to ultimately bemoved to the NAND Flash array. This command can be issued one or more times. Eachtime a new plane address is specified that plane is also queued for data transfer. To in-put data for the final plane and to begin the program operation for all previouslyqueued planes, issue either the PROGRAM PAGE (80h-10h) command or the PROGRAMPAGE CACHE (80h-15h) command. All of the queued planes will move the data to theNAND Flash array. This command is accepted by the die (LUN) when it is ready(RDY = 1).To input a page to the cache register and queue it to be moved to the NAND Flash arrayat the block and page address specified, write 80h to the command register. Unless thiscommand has been preceded by a PROGRAM PAGE TWO-PLANE (80h-11h) command,issuing the 80h to the command register clears all of the cache registers' contents on theselected target. Write five address cycles containing the column address and row ad-dress; data input cycles follow. Serial data is input beginning at the column addressspecified. At any time during the data input cycle, the RANDOM DATA INPUT (85h) andPROGRAM FOR INTERNAL DATA INPUT (85h) commands can be issued. When datainput is complete, write 11h to the command register. The selected die (LUN) will gobusy (RDY = 0, ARDY = 0) for t DBSY.To determine the progress of t DBSY, the host can monitor the target's R/B# signal or,alternatively, the status operations (70h, 78h) can be used. When the LUN's statusshows that it is ready (RDY = 1), additional PROGRAM PAGE TWO-PLANE (80h-11h)commands can be issued to queue additional planes for data transfer. Alternatively, thePROGRAM PAGE (80h-10h) or PROGRAM PAGE CACHE (80h-15h) commands can be is-sued.When the PROGRAM PAGE (80h-10h) command is used as the final command of a two-plane program operation, data is transferred from the cache registers to the NANDFlash array for all of the addressed planes during t PROG. When the die (LUN) is ready(RDY = 1, ARDY = 1), the host should check the status of the FAIL bit for each of theplanes to verify that programming completed successfully.When the PROGRAM PAGE CACHE (80h-15h) command is used as the final commandof a program cache two-plane operation, data is transferred from the cache registers tothe data registers after the previous array operations finish. The data is then movedfrom the data registers to the NAND Flash array for all of the addressed planes. This oc-curs during t CBSY. After t CBSY, the host should check the status of the FAILC bit foreach of the planes from the previous program cache operation, if any, to verify that pro-gramming completed successfully.For the PROGRAM PAGE TWO-PLANE (80h-11h), PROGRAM PAGE (80h-10h), and PRO-GRAM PAGE CACHE (80h-15h) commands, see Two-Plane Operations for two-plane ad-dressing requirements.Erase OperationsErase operations are used to clear the contents of a block in the NAND Flash array toprepare its pages for program operations.Erase OperationsThe ERASE BLOCK (60h-D0h) command, when not preceded by the ERASE BLOCKTWO-PLANE (60h-D1h) command, erases one block in the NAND Flash array. When thedie (LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to verify thatthis operation completed successfully.TWO-PLANE ERASE OperationsThe ERASE BLOCK TWO-PLANE (60h-D1h) command can be used to further systemperformance of erase operations by allowing more than one block to be erased in theNAND array. This is done by prepending one or more ERASE BLOCK TWO-PLANE (60h-D1h) commands in front of the ERASE BLOCK (60h-D0h) command. See Two-PlaneOperations for details.ERASE BLOCK (60h-D0h)The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flasharray. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).To erase a block, write 60h to the command register. Then write three address cyclescontaining the row address; the page address is ignored. Conclude by writing D0h to thecommand register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for t BERSwhile the block is erased.To determine the progress of an ERASE operation, the host can monitor the target'sR/B# signal, or alternatively, the status operations (70h, 78h) can be used. When the die(LUN) is ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.In devices that have more than one die (LUN) per target, during and following inter-leaved die (multi-LUN) operations, the READ STATUS ENHANCED (78h) commandmust be used to select only one die (LUN) for status output. Use of the READ STATUS(70h) command could cause more than one die (LUN) to respond, resulting in bus con-tention.The ERASE BLOCK (60h-D0h) command is used as the final command of an erase two-plane operation. It is preceded by one or more ERASE BLOCK TWO-PLANE (60h-D1h)commands. All blocks in the addressed planes are erased. The host should check thestatus of the operation by using the status operations (70h, 78h). See Two-Plane Opera-tions for two-plane addressing requirements.Figure 46: ERASE BLOCK (60h-D0h) OperationI/O[7:0]RDYInternal Data Move OperationsInternal data move operations make it possible to transfer data within a device fromone page to another using the cache register. This is particularly useful for block man-agement and wear leveling. The INTERNAL DATA MOVE operation is restricted to onlywithin even blocks or only within odd blocks.The INTERNAL DATA MOVE operation is a two-step process consisting of a READ FORINTERNAL DATA MOVE (00h-35h) and a PROGRAM FOR INTERNAL DATA MOVE(85h-10h) command. To move data from one page to another, first issue the READ FORINTERNAL DATA MOVE (00h-35h) command. When the die (LUN) is ready (RDY = 1,ARDY = 1), the host can transfer the data to a new page by issuing the PROGRAM FORINTERNAL DATA MOVE (85h-10h) command. When the die (LUN) is again ready (RDY= 1, ARDY = 1), the host should check the FAIL bit to verify that this operation comple-ted successfully.To prevent bit errors from accumulating over multiple INTERNAL DATA MOVE opera-tions, it is recommended that the host read the data out of the cache register after theREAD FOR INTERNAL DATA MOVE (00h-35h) completes and prior to issuing the PRO-GRAM FOR INTERNAL DATA MOVE (85h-10h) command. The RANDOM DATA READ(05h-E0h) command can be used to change the column address. The host should checkthe data for ECC errors and correct them. When the PROGRAM FOR INTERNAL DATAMOVE (85h-10h) command is issued, any corrected data can be input. The PROGRAMFOR INTERNAL DATA INPUT (85h) command can be used to change the column ad-dress.Between the READ FOR INTERNAL DATA MOVE (00h-35h) and PROGRAM FOR INTER-NAL DATA MOVE (85h-10h) commands, the following commands are supported: statusoperation (70h) and column address operations (05h-E0h, 85h). The RESET operation(FFh) can be issued after READ FOR INTERNAL DATA MOVE (00h-35h), but the con-tents of the cache registers on the target are not valid.READ FOR INTERNAL DATA MOVE (00h-35h)The READ FOR INTERNAL DATA MOVE (00h-35h) command is functionally identical tothe READ PAGE (00h-30h) command, except that 35h is written to the command regis-ter instead of 30h.It is recommended that the host read the data out of the device to verify the data priorto issuing the PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command to preventthe propagation of data errors.。

Document Title256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMRevision HistoryRevision No. History Date Remark0.0-.Initial Draft May262003Preliminary0.1-.Add Pb-free part number Feb.1320040.2-.I SB1(Max.) changed from 12uA to 6uA.Mar.3120080.3-.Add 45ns part specification.Apr.22009-.I SB1(Typ.) changed from 1uA to 0.25uA.-.I SB1(Max.) changed from 6uA to 4uA.-.Memory Function Guide updated in the last page.Apr.72009Release1.0-.EM643FV16F(KGD), EM643FV16F series & EM643FV16FUseries are unified to EM643FV16F Family.Emerging Memory & Logic Solutions Inc.3F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717Tel : +82-64-740-1700 Fax : +82-64-740-1750 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.PRODUCT FAMILY1. “xx” represents speed.2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.Product FamilyOperating Temperature Vcc RangeSpeedPower DissipationPKG Type Standby (I SB1, Typ.)Operating (I CC1.Max.)EM643FV16F Industrial (-40 ~ 85o C)2.7 ~3.6 V 45/55/70 ns0.25 µA 2)3 mAKGDEM643FV16F - xx 1)LF VFBGA-48 EM643FV16FU - xx 1)LF44-TSOP2FEATURES•Process Technology : 0.18µm Full CMOS •Organization : 256K x 16 bit•Power Supply Voltage : 2.7V ~ 3.6V •Low Data Retention Voltage : 1.5V(Min.)•Three state output and TTL Compatible •Package Type : VFBGA-48, 44-TSOP2GENERAL DESCRIPTIONThe EM643FV16F families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.R o w S e l e c tI/O Circuit Column SelectData ContData ContPre-charge CircuitMemory Array 2048 x 2048A1A2A3A4A5A6A7A0A8A9A11A12A13A14A15A16A17WE OE UB LB CSDQ0 ~ DQ7DQ8 ~ DQ15VCCVSSControl LogicA10FUNCTIONAL BLOCK DIAGRAMPIN DESCRIPTIONName FunctionName FunctionCS Chip Select input VCC Power Supply OE Output Enable input VSS GroundWE Write Enable input UB Upper Byte (DQ8~DQ15)A0~A17 Address inputs LB Lower Byte (DQ0~DQ7)DQ0~DQ15Data inputs/outputsNCNo ConnectionPIN CONFIGURATIONSVFBGA-48 : Top view(ball down)123456A LB OE A0A1A2NC B DQ8UB A3A4CS DQ0C DQ9DQ10A5A6DQ1DQ2D VSS DQ11A17A7DQ3VCCE VCC DQ12 NC A16DQ4VSSF DQ14DQ13A14A15DQ5DQ6G DQ15NC A12A13WE DQ7HNCA8A9A10A11NC1234567891011121314151644434241403938373635343332313029A4A3A2A1A0CS DQ0DQ1DQ2DQ3VCC VSS DQ4DQ5DQ6DQ7A5A6A7OE UB LB DQ15DQ14DQ13DQ12VSS VCC DQ11DQ10DQ9DQ844 - TSOP2171819202122282726252423WE A17A16A15A14A13NC A8A9A10A11A1244 - TSOP2 : Top viewABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.FUNCTIONAL DESCRIPTIONNOTE : X means don’t care. (Must be low or high state)ParameterSymbol Ratings Unit Voltage on Any Pin Relative to Vss V IN , V OUT-0.2 to 4.0V Voltage on Vcc supply relative to Vss V CC -0.2 to 4.0V Power Dissipation P D 1.0WOperating TemperatureT A-40 to 85oCCS OE WE LB UB DQ0~7DQ8~15Mode Power H X X X X High-Z High-Z Deselected Stand by X X X H H High-Z High-Z Deselected Stand by L H H L X High-Z High-Z Output Disabled Active L H H X L High-Z High-Z Output Disabled Active L L H L H Data Out High-Z Lower Byte Read Active L L H H L High-Z Data Out Upper Byte Read Active L L H L L Data Out Data Out Word Read Active L X L L H Data In High-Z Lower Byte Write Active L X L H L High-Z Data In Upper Byte Write Active LXLLLData InData InWord WriteActiveRECOMMENDED DC OPERATING CONDITIONS 1)1. TA= -40 to 85o C, otherwise specified2. Overshoot: VCC +2.0 V in case of pulse width < 20ns3. Undershoot: -2.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested.CAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% tested.DC AND OPERATING CHARACTERISTICS1. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.ParameterSymbol Min Typ Max Unit Supply voltage V CC 2.7 3.3 3.6V GroundV SS 000V Input high voltage V IH 2.2 -V CC + 0.22)V Input low voltageV IL-0.23)-0.6VItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-10pFParameterSymbol Test Conditions Min Typ Max Unit Input leakage current I LI V IN =V SS to V CC-1-1µA Output leakage current I LO CS=V IH or OE=V IH or WE=V IL or LB=UB=V IH V IO =V SS to V CC-1-1µA Operating power supplyI CC I IO =0mA, CS=V IL , V IN =V IH or V IL --3mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA, CS<0.2V, LB<0.2V or/and UB<0.2V, V IN <0.2V or V IN >V CC -0.2V--3mAI CC2Cycle time = Min, I IO =0mA, 100% duty, CS=V IL , LB=V IL or/and UB=V IL , V IN =V IL or V IH 45ns --35mA55ns --3070ns--25 Output low voltage V OL I OL = 2.1mA--0.4V Output high voltage V OH I OH = -1.0mA2.4--V Standby Current (TTL)I SB CS=V IH , Other inputs=V IH or V IL--0.3mAStandby Current (CMOS)I SB1CS>V CC -0.2V , Other inputs = 0~V CC(Typ. condition : V CC =3.3V @ 25o C) (Max. condition : V CC =3.6V @ 85o C)LL LF-0.25 1)4µAAC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5nsInput and Output reference Voltage : 1.5VOutput Load (See right) : CL 1) = 100pF+ 1 TTL(70ns) CL 1) = 30pF + 1 TTL(45ns/55ns)1. Including scope and Jig capacitance2. R 1=3070Ω, R 2=3150Ω3. V TM =2.8V4. CL = 5pF + 1 TTL (measurement with tLZ, tOLZ, tHZ, tOHZ, tWHZ)READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)WRITE CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)ParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Read cycle time t RC 45-55-70-ns Address access time t AA -45-55-70ns Chip select to output t CO -45-55-70ns Output enable to valid output t OE -20-25-35ns UB, LB acess time t BA 20 25 35ns Chip select to low-Z output t LZ 10-10-10-ns UB, LB enable to low-Z output t BLZ 5-5-5-ns Output enable to low-Z output t OLZ 5-5-5-ns Chip disable to high-Z output t HZ 020020025ns UB, LB disable to high-Z output t BHZ 020020025ns Output disable to high-Z output t OHZ 020020025ns Output hold from address changet OH10-10-10-nsParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Write cycle timet WC 45-55-70-ns Chip select to end of write t CW 35-45-60-ns Address setup time t AS 0-0-0-ns Address valid to end of write t AW 35-45-60-ns UB, LB valid to end of write t BW 35-45-60-ns Write pulse width t WP 35-40-55-ns Write recovery time t WR 0-0-0-ns Write to ouput high-Z t WHZ 0202025nsData to write time overlap t DW 25 25 30 ns Data hold from write time t DH 0-0-0-ns End write to output low-Zt OW5-5-5-nsCL 1)V TM 3)R 12)R 22)t RCAddressCSUB,LBOEData Outt COt OHt BAt OEHigh-Zt BHZt OHZTIMING WAVEFORM OF READ CYCLE(2) (WE = V IH )Data Validt OLZt BLZ t LZt AAt HZt RCAddresst AA Data Validt OHPrevious Data ValidTIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=V IL , WE=V IH, UB or/and LB =V IL )Data OutTIMING DIAGRAMSNOTES (READ CYCLE)1. t HZ and t OHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. At any given temperature and voltage condition, t HZ (Max.) is less than t LZ (Min.) both for a given device and from device to device interconnection.t WR (4)t WCAddressCSUB,LBWEData inData outt CW (2)t AW t BWt WP (1)t AS (3)High-Zt DWt DHHigh-Z t OWt WHZData UndefinedTIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)Data Validt WCAddressCSUB,LBWEData inData outt CW (2)t WR (4)t BWt WP (1)t DWt DHTIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)tAS(3)High-Z High-ZData Validt AWt WCAddressCSUB,LBWEData in Data outt CW (2)t WR (4)t BWt WP (1)t DWt DHTIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)High-ZHigh-ZData Validt AS (3)NOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP ) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from the CS going low to end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end or write to the address change. t WR applied in case a write ends as CS or WE going high.t AWDATA RETENTION CHARACTERISTICSNOTES1. See the I SB1 measurement condition of datasheet page 5.2. Typical values are measured at T A =25o C and not 100% tested.ParameterSymbolTest ConditionMinTyp 2)MaxUnitV CC for Data Retention V DR I SB1 Test Condition (Chip Disabled) 1)1.5- 3.6V Data Retention CurrentI DR V CC =1.5V, I SB1 Test Condition (Chip Disabled) 1)-0.5-µAChip Deselect to Data Retention Time t SDR See data retention wave form0--nsOperation Recovery Timet RDRt RC--t SDRt RDRData Retention ModeCS > Vcc-0.2VV cc 2.7V2.2V V DRCS GNDDATA RETENTION WAVE FORMPACKAGE DIMENSION44 - TSOP2 (0.8mm pin pitch)Unit : millimeters / inchesAB CD E F G H654321DVFBGA 48 BALLS (6X7X1 0.75mm ball pitch)M Min.NOR.Max.A ---1A10.220.32A20.21 REF A30.45 REF b 0.32 5.250.42D 6 BSCE 7 BSC e 0.75 BSC D10.35 BSC E15.25 BSCNOTES.1). DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER, PARALLEL TO DATUM PLANE Z.2). DATUM Z (SEATING PLANE) IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS.3). PARALLELISM MESUREMENT SHALL EXCLUDE ANY EFFECT OF MARK ON TOP SURFACE OF PACKAGE.DETAIL KA1 CORNERUnit: millimetersA1 CORNERXE Y0.1 ZE17X ee/2e/25X eD148X b 1)0.15 M Z X Y 0.08 M ZDETAIL KM0.08 ZZ0.1 ZAA1(A2)(A3)SEATING PLANE2)3)MEMORY FUNCTION GUIDE1. Memory Component8. VersionBlank---------------Mother die2. Device Type A ---------------2 nd generation 6---------------Low Power SRAM B ---------------3 rd generation 7---------------STRAM C ---------------4 th generation C ---------------CellularRAM D ---------------5 th generation E ---------------6 th generation3. Density F ---------------7 th generation 1--------------- 1MG ---------------8 th generation 2--------------- 2M 4--------------- 4M 9. Package8--------------- 8M Blank---------------KGD, FBGA 16--------------- 16M S ---------------32 sTSOP132--------------- 32M T ---------------32 TSOP164--------------- 64M U ---------------44 TSOP228---------------128MV ---------------32 SOP 4. Option 10. Speed 0---------------Dual CS (x8)45--------------- 45ns 1---------------Single CS (x8)55--------------- 55ns 3---------------Single CS / tBA=tOE (x16)60--------------- 60ns 4---------------Single CS / tBA=tCO (x16)70--------------- 70ns 5---------------Dual CS / tBA=tOE (x16)85--------------- 85ns 6---------------Dual CS / tBA=tCO (x16)90--------------- 90ns 10---------------100ns 5. Technology 12---------------120nsF ---------------Full CMOS 11. Power 6. Operating Voltage LL ---------------Low Low PowerT ---------------5.0V LF ---------------Low Low Power(Pb-free & Green)V ---------------3.3V L ---------------Low PowerU ---------------3.0V S ---------------Standard PowerS ---------------2.5V R ---------------2.0V P ---------------1.8V 7. Organization 8--------------- X8 bit 16---------------X16 bit 32---------------X32 bitEMX XX XXX XX XX -XX XX1. EMLSI Memory2. Device Type 11. Power3. Density 10. Speed4. Function 9. Package5. Technology 8. Version6. Operating Voltage7. Organization。

对于看一款SD卡产品而言，最好的升级莫过于读写性能的提升，全新第四代FlashAir SD卡在读写性能上的表现是相当出色的，这对于喜欢拍摄高清视频的玩家而言绝对是非常好的消息。

同时，全新的Eyefi连接技术可有效避免无线传输时相机自动关闭，保证稳定快捷的数据传输，也具有非常不错的实用性，的确是非常不错的数码伴侣。

工程师点评DETAILS 参数表存储容量：32GB 读取速度：90MB/s 写入速度：70MB/s 参考价格：179元东芝存储400-699-9925EXPERIENCE立拍即享！新一代东芝Flash Air体验118119清爽的蓝白CP东芝FlashAir SD卡的意义在于为单反相机等设备自主提供WiFi无线传输能力，便于使用智能手机或平板电脑等设备来直接查看、传输并分享所拍摄的照片。

从2012年推出第一代产品至今已经有六个年头，新一代东芝Flash Air 32GB准确地说应该算是第四代产品，成熟的产品系列让市场消费者对于这款产品颇感熟悉，依旧是蓝白CP的经典外观设计，而我们拿到这款产品时，才刚刚进行了APP的升级。

第四代FlashAir SD卡改用全新包装，包装盒以及SD卡本体都是以深蓝白色为主色调，清爽的设计风格非常养眼。

包装设计上提供了一个透明卡壳，便于用户在日常使用放置产品时保护好SD卡金手指。

除了蓝白色调和细心的保护壳设计外，东芝FlashAir SD卡的外包装上印有产品重要的资料信息：支持USH-I速度规格，全新第四代FlashAir SD卡写入速度升级至70MB/s，读取速度升级至90MB/s，这样的性能规格已经能够同EXCERIA PRO极至超速SD卡看齐了。

而在蓝白相间的SD卡上，最显眼的就是FlashAir字样，同时，还标明该产品支持UHS－I传输规格并具有U3高速等级和class 10的速度等级。

显然，对于产品性能是非常有信心的。

多种规格可选作为一款通用性SD卡产品，东芝FlashAir SD卡在体积上与普通SD卡并没有任何区别，该卡提供16GB、32GB和64GB三种规格可选，用户可根据个人使用情况选择相应容量的产品，而作为全新升级产品，此存储卡的读取速度已经提升至90MB/s，写入速度提升至70MB/s，它支持4K视频拍摄。

mk9019f的规格书MK9019F芯片是一款高性能的微控制器芯片，具有广泛的应用范围和出色的功能特性。

本文将从MK9019F的概述、技术规格、应用领域和未来发展趋势等方面进行详细介绍，以帮助读者更全面地了解这款产品。

一、概述MK9019F是一款基于ARM架构的32位微控制器芯片，由一家知名芯片设计公司研发生产。

该芯片采用先进的制造工艺和设计理念，具有高性能、低功耗、稳定性好等特点，适用于各种嵌入式系统和智能设备。

MK9019F作为一款通用型的芯片，可以广泛应用于工业控制、智能家居、汽车电子、物联网等领域。

二、技术规格1.处理器核心：ARM Cortex-M4F2.主频：100MHz3.存储器：Flash存储器32KB，RAM存储器8KB4.通信接口：UART、SPI、I2C5. ADC/DAC：12位ADC，8位DAC6.工作温度：-40℃~85℃7.电源电压：3.3V8.封装形式：LQFP48MK9019F的技术规格表明了其在处理能力、存储容量、通信能力等方面的优势，能够满足各种复杂应用场景的需求。

三、应用领域1.工业控制：MK9019F在工业控制领域应用广泛，可以作为PLC、电机控制器、传感器接口等设备的核心控制单元，实现工业自动化生产。

2.智能家居：MK9019F支持多种通信接口，可用于智能家居设备的控制与联网，如智能门锁、智能插座、智能照明等。

3.汽车电子：MK9019F具有高速处理能力和丰富的接口资源，可用于汽车电子系统中的控制器、仪表盘、车载娱乐等功能。

4.物联网：MK9019F小巧灵活，适合用于物联网设备中，如智能传感器、智能监控、智能终端等应用。

MK9019F在各个领域都有广泛的应用前景，其强大的性能和可靠性为各种智能设备的研发提供了强大的支持。

四、未来发展趋势随着科技的不断进步和市场的快速发展，MK9019F芯片将不断优化和升级，以满足新一代智能设备对性能和功能的需求。

未来，MK9019F 可能会加强功耗管理、数据处理速度、通信稳定性等方面的能力，以应对日益复杂的应用场景。