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1N4448-A资料

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DS12019 Rev. 6 - 21of 21N4148 / 1N4448www.diodes.comãDiodes Incorporated1N4148 / 1N4448

FASTSWITCHING DIODE

·Fast Switching Speed·General Purpose Rectification·SiliconEpitaxialPlanar Construction·Lead Free Finish, RoHS Compliant(Note 2)

CharacteristicSymbol1N41481N4448

UnitNon-Repetitive Peak Reverse VoltageVRM100VPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR75V

RMS Reverse VoltageVR(RMS)53VForward Continuous Current (Note 1)IFM

300500mAAverage Rectified Output Current (Note 1)IO150mANon-Repetitive Peak Forward Surge Current @ t = 1.0s@ t = 1.0msIFSM1.02.0APower Dissipation (Note 1)Derate Above 25°CPd5001.68

mW

mW/°CThermal Resistance, Junction to Ambient Air (Note 1)RqJA300°C/WOperating and Storage Temperature RangeTj,TSTG-65 to +175°CMaximum Ratings@ TA= 25°C unless otherwise specified

Notes: 1. Valid provided that device terminals are kept at ambient temperature.2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied where applicable,seeEU Directive Annex Notes 5 and 7.CharacteristicSymbolMinMaxUnitTest ConditionMaximum Forward Voltage1N41481N44481N4448VFM¾0.62¾1.00.721.0VIF= 10mAIF= 5.0mAIF= 100mA

Maximum Peak Reverse CurrentIRM¾5.0503025mAmAmAnAVR= 75VVR= 70V,Tj= 150°CVR= 20V,Tj= 150°CVR= 20VTotal CapacitanceCT¾4.0pFVR= 0, f = 1.0MHzReverse Recovery Timetrr¾4.0nsIF= 10mA to IR=1.0mAVR= 6.0V,RL= 100WElectrical Characteristics@ TA= 25°C unless otherwise specifiedFeatures

·Case: DO-35·Case Material: Glass·Moisture Sensitivity: Level 1 per J-STD-020C·Leads:Solderableper MIL-STD-202, Method 208·Terminals: Finish¾Sn96.5Ag3.5. Solderable perMIL-STD-202, Method 208·Polarity: Cathode Band·Marking: Type Number·Weight: 0.13 grams (approximate)Mechanical DataAAB

CD

DO-35DimMinMaxA25.40¾B¾4.00C¾0.60D¾2.00All Dimensions in mm元器件交易网www.cecb2b.comDS12019 Rev. 6 - 22of 21N4148 / 1N4448www.diodes.com110100100010,000

0100200I,LEAKAGECURRENT(nA)

R

T,JUNCTIONTEMPERATURE(C)Fig.2,LeakageCurrentvsJunctionTemperaturej

°V=20VR10

1.01001000

0.1

0.0100.40.81.21.62.0I,INSTANTANEOUSFORWARDCURRENT(mA)

F

V,INSTANTANEOUSFORWARDVOLTAGE(V)Fig.1ForwardCharacteristics

FOrdering Information

DevicePackagingShipping1N4148-ADO-3510K/Ammo Pack1N4148-TDO-3510K/Tape & Reel, 13-inch1N4448-ADO-3510K/Ammo Pack1N4448-TDO-3510K/Tape & Reel, 13-inch

Notes: 3. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.(Note 3)IMPORTANTNOTICE

LIFESUPPORTDiodesIncorporatedanditssubsidiariesreservetherighttomakemodifications,enhancements,improvements,correctionsorotherchangeswithoutfurthernoticetoanyproductherein.DiodesIncorporateddoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductdescribedherein;neitherdoesitconveyanylicenseunderitspatentrights,northerightsofothers.TheuserofproductsinsuchapplicationsshallassumeallrisksofsuchuseandwillagreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.

DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthePresidentofDiodesIncorporated.元器件交易网www.cecb2b.com

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1N4448W开关二极管

1N4448W开关二极管

1N4448WFAST SWITCHING DIODE

Case: Molded plastic bodyTerminals: Plated leads solderable per MIL-STD-750, Method 2026Polarity: Polarity symbols marked on caseMarking

:T5FEATURESMECHANICAL DATADimensions in millimeters and (inches)Fast switching speedSurface mount package ideally suitedfor automatic insertionFor general purpose switching applicationsHigh conductanceELECTRONICS CO.,LTD.LING JIERSTAR SEAElectrical ratings @TA=25C

SYMBOLS

ConditionsV(BR)RVF1VF2

V

F3VF4IR1IR2Reverse brdakdown voltageForward voltageReverse currentCapacitance between terminalsReverse recovery timePARAMETERMin.Typ.Max.UnitVVVVVpFnsIR=10uAIF=5mAIF=10mAIF=100mAIF=150mAVR=75VVR=20VVR=0V,f=1.0MHzIF=IR=10mAIrr=0.1XIR,RL=1000.720.8551.01.252.5254535002504.02.0400315-65 to +150100Maximum ratings and electrical characteristics, Single diode @TA=25CSYMBOLSUNITSVRRMVRWMVRPeak repetitive peak reverse voltageWorking peak reverse voltageDC Blocking voltageRMS Reverse voltageForward continuous currentAverage rectified output currentPeak forward surge current @=1.0us @=1.0sPower dissipationThermal resistance junction to ambientStorage temperatureNon-Repetitive peak reverse voltageTSTGVRMVVmAmAAmWK/WCVLimits75VR(RMS)IFMIOPdPARAMETERIFSMRΘJA

JAN1N4148-1资料

JAN1N4148-1资料

DESIGN DATA

Case: Hermetically sealed glass package per MIL-

PRF-19500/116 DO-35 outline

Lead Material: Copper clad steel

Lead Finish: Tin/Lead

Thermal Resistance (R

θJL): 250°C/W maximum

at L=.375”

Thermal Impedance (Z

θJX): 70°C/W maximum

Marking: Alpha numeric.

Polarity: Cathode end is banded.

DC ELECTRICAL CHARACTERISTICS

V

FI

RV

BR

Ambient

(°C) I

F

mA Min

V Max

V Ambient

(°C)

V (dc) Min

µA Max

µA Ambient

(°C) I

R

µA Min

V Max

V

25 10 - 0.825 20 - 0.025 25 100 100-

25 100 - 1.225 75 - 0.500

150 10 - 0.8150 20 - 35.0

-55 100 - 1.3150 75 - 75.0

MAXIMUM RATINGS AT 25 °C

Operating Temperature: -65°C to +200°C

Storage Temperature: -65°C to +200°C

Surge Current A, sine 8.3mS: 2.0A

Surge Current B, square 8.3mS: 1.41A

Total Power Dissipation: 500mW

Operating Current: 200mA, T

A= +25°C

Derating Factor: 1.14mA/°C above T

最常用的电子元件型号

最常用的电子元件型号

1 / 7

最常用的电子元件型号

整流二极管:

1N4001~1N4007 50V~1000~/1.0A

1N5391~1N5399 50V~1000V/1.5A

1N5400~1N5408 0V~1000V/3.0A

开关二极管:

1N4148 1N4150 1N4448

肖特基二极管:

1N5817~1N5819 20V~40V/1.0A

1N5820~1N5822 20V~40V/3.0A

1N60 1N60P小电流低压降

光电耦合器:

4N35 4N36 4N37

晶体三极管:

PNP:8050 9015 A92

NPN:9012 9013 9014 9015 9018

D/A转换器:

AD7520 AD7521 AF7530 AD7521

8位:DAC0830 DAC0832 (D/A )

12位:AD7541 (D/A)

8位:ADC0802 ADC0803 ADC0804 ADC0831 ADC0832 ADC0834 ADC0838(A/D)

跨导运算变压器:

CA3080 CA3080A OTA

BiMOS运算变压器:

CA3140 CA3140A

双向触发二极管:

DB3

快恢复二极管:

FR101~FR107 50V~1000/1.0A

三位半A/D转换器:

ICL7106 ICL7107 ICL7116 ICL7117

载波稳零运算放大器:

ICL7650 2 / 7

CMOS电源电压变换器:

ICL7660/MAX1044

单片函数发生器:

1N4448WT中文资料

1N4448WT中文资料

1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode

© 2007 Fairchild Semiconductor Corporation 1N4148WT / 1N4448WT / 1N914BWT Rev. 1.01 March 2008

1N4148WT / 1N4448WT / 1N914BWT

High Conductance Fast Switching Diode

•Fast Switching Diode (Trr <4.0nsec)•Flat Lead, Surface Mount Device under 0.70mm Height•Extremely Small Outline Plastic Package SOD523F•Moisture Level Sensitivity 1•Pb-free Version and RoHS Compliant•Matte Tin (Sn) Lead Finish•Green Mold Compound

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.