4N36S1TB-V中文资料

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesFeatures:• 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5 • High isolation voltage between input and output (Viso=5000 V rms)• Creepage distance >7.6mm• Operating temperature up to +110°C • Compact dual-in-line package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approval pending • NEMKO approval pending • DEMKO approval pending • FIMKO approval pending • CSA approval pendingDescriptionThe 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.Applications• Power supply regulators • Digital logic inputs • Microprocessor inputs1. Anode2. Cathode3. No Connection4. Emitter5. Collector6. BaseSchematic6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesAbsolute Maximum Ratings (T a =25°C)Parameter Symbol Rating Unit Forward currentI F 50 mA Peak forward current (t = 10µs)I FM 1 A Reverse voltageV R 6 V 70 mW InputPower dissipation (T A = 25°C) Derating factor (above 100°C) P D 3.8 mW/°C Collector-Emitter voltage V CEO 80 V Collector-Base voltageV CBO 80 V Emitter-Collector voltage V ECO 7 V OutputEmitter-Base voltageV EBO 7 V 150 mWPower dissipation (T A = 25°C) Derating factor (above 100°C)P C 9.0mW/°CTotal power dissipation P tot 200 mW Isolation voltage *1 V iso 5000 Vrms Operating temperature T opr -55~+110 °C Storage temperature T stg -55~+125 °C Soldering temperature *2 T sol260 °CNotes*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together. *2 For 10 seconds.6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesElectrical Characteristics (T a =25°C unless specified otherwise)InputParameter Symbol Min. Typ.* Max. Unit ConditionForward voltage V F - 1.2 1.5 V I F = 10mA Reverse current I R - - 10 µA V R = 6V Input capacitanceC in-30-pFV = 0, f = 1MHzOutputParameter Symbol Min. Typ.* Max. Unit ConditionCollector-Base dark current I CBO - - 20 nA V CB = 10V - - 50V CE = 10V, IF=0mA Collector-Emitter darkcurrentI CEO - - 50nAV CE = 60V, IF=0mACollector-Emitter breakdown voltage BV CEO80 - - V I c =1mACollector-Base breakdown voltage BV CBO 80 -V I C =0.1mAEmitter-Collector breakdown voltage BV ECO 7 - - V I E =0.1mA Emitter-Basebreakdown voltage BV EBO7 - - V I E =0.1mACollector-Emitter capacitanceC CE - 8 - pF VCE=0V, f=1MHz* Typical values at T a = 25°C6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesTransfer Characteristics (T a =25°C unless specified otherwise)Parameter Symbol Min. Typ.* Max. Unit Condition4N35, 4N36,4N37 100--H11A150 - - H11A5 30 - -4N25, 4N26, 4N38, H11A2, H11A3 20 - - Current transfer ratio4N27, 4N28, H11A4 CTR10--%I F = 10mA, V CE = 10V4N25, 4N26, 4N27, 4N28- - 0.5 I F = 50mA, I c = 2mA4N35, 4N36,4N37 - - 0.3H11A1, H11A2, H11A3, H11A4, H11A5 - - 0.4I F = 10mA, I c = 0.5mACollector-Emitter saturation voltage4N38V CE(sat) - - 1.0VI F = 20mA, I c = 4mA Isolation resistanceR IO 1011 - - ΩV IO = 500VdcInput-output capacitanceC IO- 0.2 - pF V IO = 0, f = 1MHz4N25, 4N26, 4N27, 4N28, H11A1, H11A2, H11A3,H11A4, H11A5- 3 10V CC = 10V, I F = 10mA,R L = 100Ω See Fig. 11Turn-on time4N35, 4N36, 4N37, 4N38 Ton- 10 12µsV CC = 10V, I C = 2mA,R L = 100Ω, See Fig. 114N25, 4N26, 4N27, 4N28, H11A1, H11A2, H11A3, H11A4- 3 10V CC = 10V, I F = 10mA, R L = 100Ω See Fig. 11Turn-off time4N35, 4N36, 4N37, 4N38Toff- 9 12µsV CC = 10V, I C = 2mA, R L = 100Ω, See Fig. 11* Typical values at T a = 25°C6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X SeriesH11AX SeriesTypical Performance Curves6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X SeriesH11AX SeriesFigure 11. Switching Time Test Circuit & WaveformsI FI CR LR INR BEV CCOutputInputInput PulseOutput Pulse10%90%t f t r t offt on6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesOrder InformationPart Number4NXXY(Z)-VorH11AXY(Z)-VNoteXX = Part no. for 4NXX series (25, 26, 27, 28, 35, 36, 37 or 38) X = Part no. for H11AX series (1, 2, 3, 4, or 5) Y = Lead form option (S, S1, M or none) Z = Tape and reel option (TA, TB or none). V = VDE (optional)Option Description Packing quantityNone Standard DIP-665 units per tube M Wide lead bend (0.4 inch spacing)65 units per tube S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel S (TB) Surface mount lead form + TB tape & reel option1000 units per reel S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel S1 (TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reel6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesPackage Drawings(Dimensions in mm)Standard DIP TypeOption M Type6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesOption S TypeOption S1 Type6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesDevice MarkingNotesEL denotes Everlight4N35 denotes Device Number Y denotes 1 digit Year code WW denotes 2 digit Week code V denotes VDE (optional)EL 4N35YWWV6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesTape dimensionsDimension No.A B Do D1 E F Dimension (mm) 10.4±0.1 7.52±0.1 1.5±0.1 1.5+0.1/-0 1.75±0.1 7.5±0.1Dimension No.Po P1 P2 t W K Dimension (mm) 4.0±0.15 16.0±0.1 2.0±0.1 0.35±0.03 16.0±0.2 4.5±0.1Option TAOption TBDirection of feed from reel Direction of feed from reel6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesSolder Reflow Temperature Profile6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER4N3X Series H11AX SeriesDISCLAIMER1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material changefor above specification.2. When using this product, please observe the absolute maximum ratings and the instructions for use asoutlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3. These specification sheets include materials protected under copyright of EVERLIGHT Corporation.Please do not reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。

从内存条芯片编号看内存条的大小(2009-11-22 08:12:39)转载▼标签：刷新速度tsop封装字段ddr266台湾itSDRAM 内存芯片的新编号HY XX X XX XX X X XX X X X-XX XA B C D E F G H I J K L MA字段由HY组成，代表现代(Hynix)内存芯片的前缀。

B字段表示产品类型。

57代表SDRAM内存。

C字段表示工作电压。

V代表VDD电压为3.3V、VDDQ电压为3.3V；Y代表VDD电压为3.0V、VDDQ电压为3.0v；U代表VDD电压为2.5V、VDDQ电压为2.5V；W代表VDD电压为2.5V、VDDQ电压为1.8V；S代表VDD电压为1.8V、VDDQ电压为1.8V/ D字段表示密度与刷新速度。

16代表16Mbit密度、2K刷新速度；32代表32Mbit密度、4K刷新速度；64代表64Mbit密度、4K刷新速度；28代表128Mbit密度、4K刷新速度；2A代表128Mbit密度(TCSR)、4K刷新速度；56代表256Mbit密度、8K刷新速度；12代表512Mbit密度、8K刷新速度。

E字段表示内存结构。

4代表x4；8代表x8；16代表x16 ;32代表x32。

F字段表示内存芯片内部由几个Bank组成。

1代表2Bank；2代表4Bank。

G字段表示电气接口。

0代表LVTTL；1代表SSTL_3。

H字段表示内存芯片的修正版本。

空白或H代表第1版；A或HA代表第2版；B或HB代表第3版；C或HC代表第4版。

也有一些特殊的编号规则，如：编号为HY57V64420HFT是第7版；编号为HY57V64420HGT和HY57V64820HGT是第8版；编号为HY57V28420AT是第3版；编号为HY57V56420HDT是第5版。

I字段表示功率消耗能力。

空白代表正常功耗；L代表代功耗；S代表超代功耗。

J字段表示内存芯片的封装方式。

Document Number: 81181For technical questions, contact: *****************************Optocoupler, Phototransistor Output, with Base Connection4N35, 4N36, 4N37Vishay SemiconductorsDESCRIPTIONEach optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.AGENCY APPROVALS•Underwriters laboratory file no. E52744•BSI: EN 60065:2002, EN 60950:2000•FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156FEATURES•Isolation test voltage 5000 V RMS •Interfaces with common logic families •Input-output coupling capacitance < 0.5 pF •Industry standard dual-in-line 6 pin package •Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECAPPLICATIONS•AC mains detection •Reed relay driving•Switch mode power supply feedback •Telephone ring detection •Logic ground isolation•Logic coupling with high frequency noise rejection21842ORDER INFORMATIONPART REMARKS 4N35CTR > 100 %, DIP-64N36CTR > 100 %, DIP-64N37CTR > 100 %, DIP-6ABSOLUTE MAXIMUM RATINGS (1)PARAMETER TEST CONDITIONSYMBOLVALUEUNITINPUTReverse voltage V R 6V Forward current I F 50mA Surge current t ≤ 10 μsI FSM 1A Power dissipation P diss70mWOUTPUTCollector emitter breakdown voltage V CEO 70V Emitter base breakdown voltage V EBO 7V Collector current I C 50mA t ≤ 1 msI C 100mA Power dissipation P diss70mWCOUPLERIsolation test voltage V ISO5000V RMS Creepage ≥ 7mm Clearance≥ 7mm Isolation thickness between emitter and detector≥ 0.4mm For technical questions, contact: *****************************Document Number: 811814N35, 4N36, 4N37Vishay Semiconductors Optocoupler, Phototransistor Output,with Base ConnectionNotes (1)T amb = 25 °C, unless otherwise specified.Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(2)Refer to wave profile for soldering condditions for through hole devices (DIP).Notes (1)T amb = 25 °C, unless otherwise specified.Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.(2)Indicates JEDEC registered value.COUPLERComparative tracking index DIN IEC 112/VDE 0303, part 1175Isolation resistance V IO = 500 V, T amb = 25 °C R IO 1012ΩV IO = 500 V, T amb = 100 °CR IO 1011ΩStorage temperature T stg - 55 to + 150°C Operating temperature T amb - 55 to + 100°C Junction temperature T j 100°C Soldering temperature (2)max.10 s dip soldering: distance to seating plane≥ 1.5 mm T sld260°CELECTRICAL CHARACTERISTICS (1)PARAMETER TEST CONDITIONPARTSYMBOLMIN.TYP.MAX.UNITINPUTJunction capacitance V R = 0 V, f = 1 MHzC j 50pF Forward voltage (2)I F = 10 mAV F 1.3 1.5V I F = 10 mA, T amb = - 55 °CV F 0.91.3 1.7V Reverse current (2)V R = 6 V I R 0.110μA Capacitance V R = 0 V, f = 1 MHzC O25pFOUTPUTCollector emitter breakdown voltage (2)I C = 1 mA4N35BV CEO 30V 4N36BV CEO 30V 4N37BV CEO 30V Emitter collector breakdown voltage (2)I E = 100 μABV ECO7VOUTPUTCollector base breakdown voltage (2)I C = 100 μA, I B = 1 μA4N35BV CBO 70V 4N36BV CBO 70V 4N37BV CBO 70V Collector emitter leakage current (2)V CE = 10 V , I F = 04N35I CEO 550nA 4N36I CEO 550nA V CE = 10 V , I F = 04N37I CEO 550nA V CE = 30 V , I F = 0,T amb = 100 °C4N35I CEO 500μA 4N36I CEO 500μA 4N37I CEO 500μA Collector emitter capacitance V CE = 0C CE6pFCOUPLERResistance, input output (2)V IO = 500 V R IO 1011ΩCapacitance, input outputf = 1 MHzC IO0.6pFABSOLUTE MAXIMUM RATINGS (1)PARAMETER TEST CONDITIONSYMBOLVALUEUNIT4N35, 4N36, 4N37Optocoupler, Phototransistor Output,with Base ConnectionVishay SemiconductorsNote(1)Indicates JEDEC registered values.Note(1)Indicates JEDEC registered values.TYPICAL CHARACTERISTICST amb = 25 °C, unless otherwise speciedFig. 1 - Forward Voltage vs. Forward CurrentFig. 2 - Normalized Non-Saturated and Saturated CTR vs.LED Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.LED CurrentFig. 4 - Normalized Non-Saturated and Saturated CTR vs.LED CurrentCURRENT TRANSFER RATIOPARAMETER TEST CONDITION PART SYMBOL MIN TYP.MAX UNITDC current transfer ratio (1)V CE = 10 V, I F = 10 mA4N35CTR DC100%4N36CTR DC100%4N37CTR DC100%V CE = 10 V, I F = 10 mA,T A = - 55 °C to + 100 °C4N35CTR DC4050%4N36CTR DC4050%4N37CTR DC4050%SWITCHING CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN.TYP.MAX.UNIT Switching time (1)V CC = 10 V, I C = 2 mA, R L = 100 Ωt on, t off10μsDocument Number: 81181For technical questions, contact: *****************************4N35, 4N36, 4N37Vishay Semiconductors Optocoupler, Phototransistor Output,with Base ConnectionFig. 5 - Normalized Non-Saturated and Saturated CTR vs.LED CurrentFig. 6 - Collector Emitter Current vs.Temperature and LED CurrentFig. 7 - Collector Emitter Leakage Current vs. Temperature Fig. 8 - Normalized CTR cb vs. LED Current and Temperature Fig. 9 - Normalized Photocurrent vs. I F and Temperature Fig. 10 - Normalized Non-Saturated h FE vs.Base Current and Temperature For technical questions, contact: *****************************Document Number: 811814N35, 4N36, 4N37 Optocoupler, Phototransistor Output,with Base ConnectionVishay SemiconductorsFig. 11 - Normalized h FE vs. Base Current and Temperature Fig. 12 - Propagation Delay vs. Collector Load ResistorFig. 13 - Switching Timing Fig. 14 - Switching SchematicDocument Number: 81181For technical questions, contact: *****************************4N35, 4N36, 4N37Vishay Semiconductors Optocoupler, Phototransistor Output,with Base ConnectionPACKAGE DIMENSIONS in millimetersPACKAGE MARKING For technical questions, contact: *****************************Document Number: 81181Legal Disclaimer Notice VishayDisclaimerALL PRODUCT, PRODUCT SPECIFICAT IONS AND DAT A ARE SUBJECT T O CHANGE WIT HOUT NOT ICE T O IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-161Document Number: 91000。

UNISONIC TECHNOLOGIES CO., LTD4N60 Power MOSFET4 Amps, 600 VoltsN-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 2.5Ω @V GS = 10 V* Ultra low gate charge ( typical 15 nC )* Low reverse transfer Capacitance ( C RSS = typical 8.0 pF ) * Fast switching capability * Avalanche energy Specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-22011TO-220F*Pb-free plating product number: 4N60LORDERING INFORMATIONOrder Number Pin AssignmentNormalLead Free Plating Package 1 2 3 Packing4N60-TA3-T 4N60L-TA3-T TO-220 G D S Tube 4N60-TF3-T 4N60L-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current - (Note 1) I AR 4.4 AT C = 25°C 4.0 AContinuous Drain CurrentT C = 100°C I D 2.8 APulsed Drain Current, T P Limited by T JMAX - (Note 1) I DM 16 A Avalanche Energy, Single Pulsed (Note 2) E AS 260 mJ Avalanche Energy, Repetitive, Limited by T JMAX E AR 10.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (T C = 25°C) P D 106 W Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITJunction-to-Ambient θJA 62.5 °C/W Junction-to-Case θJC 3 °C/W Case-to-Sink θCS 0.5 °C/WELECTRICAL CHARACTERISTICS (T C =25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 600V V DS = 600 V, V GS = 0 V10µA Drain-Source Leakage Current I DSSV DS = 480 V, T C = 125°C100µA Forward V GS = 30 V, V DS = 0 V100nA Gate-Source Leakage CurrentReverse I GSSV GS = -30 V, V DS = 0 V-100nA Breakdown Voltage Temperature CoefficientBV DSS /△T J I D = 250 µA, Referenced to 25°C 0.6 V/ On Characteristics Gate Threshold VoltageV GS(TH)V DS = V GS , I D = 250 µA 2.0 4.0V Drain-Source On-State Resistance R DS(ON) V GS = 10 V, I D = 2.2 A2.5ΩForward Transconductance g FSV DS = 50 V, I D = 2.2 A (Note 4)4.0SDynamic Characteristics Input Capacitance C ISS 520 670pFOutput CapacitanceC OSS 70 90pFReverse Transfer Capacitance C RSSV DS = 25 V, V GS = 0 V, f = 1MHz 8 11pF Switching Characteristics Turn-On Delay Time t D(ON) 13 35nsTurn-On Rise Time t R 45 100ns Turn-Off Delay Time t D(OFF) 25 60nsTurn-Off Fall Time t FV DD = 300V, I D = 4.0 A, R G = 25Ω(Note 4, 5) 35 80ns Total Gate Charge Q G 15 20nCGate-Source Charge Q GS 3.4 nCGate-Drain ChargeQ DDV DS = 480V,I D = 4.0A, V GS = 10 V(Note 4, 5)7.1 nCELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSource- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 4.4 A 1.4VMaximum Continuous Drain-SourceDiode Forward CurrentI S 4.4AMaximum Pulsed Drain-Source DiodeForward CurrentI SM 17.6AReverse Recovery Time t RR 250 ns Reverse Recovery Charge Q RR V GS = 0 V, I S = 4.4 A,dI F /dt = 100 A/µs (Note 4) 1.5 µCNotes: 1. Repetitive Rating : Pulse width limited by T J2. L = 25mH, I AS = 4.4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤4.4A, di/dt ≤200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS-100D r a i n -S o u rc e B r e a kd o w n V o l t a ge , B V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)502001001501.201.11.00.90.8Breakdown Voltage Variation vs .Temperature-100D r a i n -S o u r ce O n -R e s i s t a n c e , R D S (O N ) (N o r m a l i z e d )Junction Temperature , T J (℃)-50502001001503.002.01.00.50.01.52.5On-Resistance Junction Temperature10Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )1001011000Maximum Safe Operating AreaD r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)751000125502512345Maximum Drain Current vs . CaseTemperature100.11Drain -to-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )On-State Characteristics2Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics 46810100.1TYPICAL CHARACTERISTICS(Cont.)D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (o h m )Drain Current, I D (A)24On-Resistance Variation vs . DrainCurrent and Gate Voltage 6810120.2Source-Drain Voltage , V SD (V)On State Current vs. Allowable CaseTemperature1.80.40.60.81.01.2 1.61.4120000.1Drain-SourceVoltage , V DS (V)C a p a c i t a n c e (p F )1000200110800600Capacitance Characteristics(Non-Repetitive)G a t e -S o u r c e V o l t a g e , V G S (V )Total Gate Charge , Q G (nC)515258101210642020Gate Charge Characteristics400T h e r m a l R e s p o n s e , θJ C (t )Square Wave Pulse Duration , t 1(sec)Transient Thermal ResponseCurve 00P D (w )T C (°C)2040204080100120Power Dissipation606080100120140160。

Rackmount StorageRS431SProduct OverviewRackmount Storage SilverStone created an incredible 1U rackmount storage product in the RS431S. It connects to the PC via 6Gbps SAS/Mini-SAS interface which enables data transfer with maximum compatibility and stability. The RS431S offers a convenient and economical way to store data and is suitable for all users that require frequent backup and data manipulation.RS431SModel No.Enclosure Material ColorPower SupplyDrive Size Support Drive Interface Support LED IndicatorEnclosure Interface Cooling Fan Net Weight Dimension Certifications EnvironmentAccessoriesComputer System Requirements*Your system must have SAS controller if you want to use SAS HDD*Hard drive capacity and RAID support is dependent on mini-SAS controller usedSST-RS431SAluminum + SECC BlackInternal universal power supply switch (115V/230V)Input: AC 100-130V/200-260V, 50Hz/60Hz Output: DC +5V/6A +12V/11A 4 x 3.5” SAS/SATA HDD/SSD SAS*, SATA I / II / III HDD status LEDBlue for HDD detected Red flash for HDD accessMini-SAS port x 1 (SFF-8088 connector)40mm fan x 34615g440mm (D) x 302mm (W) x 53.5mm (H)17.32" (D) x 11.89" (W) x 2.11" (H)CE FCC RoHS complianceOperating Temperature: 5°C ~ 35°C Operating Humidity: 20%RH ~ 80%RH Storage Temperature: -20°C ~ 50°C Storage Humidity: 20%RH ~ 80%RH RS431S (hard drives not included) Accessory pack x 1Power cord x 1User manual x 1Windows 10/8.1/8/7 or future release version Mac OS 10.x or future release versio n Linux Kernel 2.6.31 or aboveSupports 3.5” X 4 SATA/SAS HDDBuilt-in power supply and three 40mm fansCompact and screw-less design for easy HDD installation Plug and PlaySupport Mini-SAS maximum 6Gbps transfer speedProduct Overview1. RS431S (hard drives not included)2. Power Cord3. User Manual4. Accessory packRackmount Storage RS431SHard drive installationRackmount Storage RS431S1Open the front door Откройте переднюю дверцуフロントドアを開く프론트 도어를 열고打開前門打开前门Переместите жесткий дискдо щелчкаラッチがカチッと鳴るまでHDD をスライドさせます래치가 찰칵 소리를 낼 때까지 HDD 를 밀어 넣으십시오將硬碟小心地放入硬碟槽，往內推直到固定卡榫扣上将硬盘小心地放入硬盘槽，往内推直到固定卡榫扣上Hard drive installationRackmount Storage RS431S3Close the front door близко переднюю дверцуフロントドアを閉める프론트 도어를 닫습니다關閉前門关闭前门Chiudere il portello frontaleЕсли жесткий диск неустанавливается надлежащим образом, возможно, он поврежден正しく取り付けていない場合、HDD が損傷する可能性があります올바로 설치하지 않을 경우 HDD가 손상될 수 있습니다請注意：如果沒有正確的安裝硬碟，硬碟將有可能會損壞。

Value Units A V mJ A mJ V/ns W A V TO-220F1.Gate2. Drain3. Source3216002.31.5162602.33.33.0330.2630W/oCTRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™。

N-Channel Super Junction Power MOSFET ⅡV DS @T jmax 650V R DS(ON) MAX 1200 m ΩI D 4 AGeneral DescriptionThe series of devices use advanced super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliantApplication● Power factor correction （PFC ） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply （UPS ）Package Marking And Ordering InformationDeviceDevice PackageMarkingNCE60R1K2 TO-220 NCE60R1K2 NCE60R1K2D TO-263 NCE60R1K2D NCE60R1K2F TO-220F NCE60R1K2FTable 1.Absolute Maximum Ratings (T C =25℃)Parameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain-Source Voltage (V GS=0V ） V DS600 V Gate-Source Voltage (V DS=0V) V GS ±30 VContinuous Drain Current at Tc=25°C I D (DC) 4 4* AContinuous Drain Current at Tc=100°C I D (DC) 2.5 2.5 APulsed drain current(Note 1)I DM (pluse) 12 12 A Maximum Power Dissipation(Tc=25℃) Derate above 25°CP D46 0.3728.5 0.23WW/°CSingle pulse avalanche energy (Note2)E AS 130mJAvalanche current(Note 1)I AR 2 A Repetitive Avalanche energy ，t AR limited by T jmax(Note 1)E AR0.2mJSchematic diagramTO-263 TO-220 TO-220FParameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain Source voltage slope, V DS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt ，V DS ≤480 V,I SD <I Ddv/dt 15V/nsOperating Junction and Storage Temperature RangeT J ,T STG -55...+150 °C* limited by maximum junction temperatureTable 2. Thermal CharacteristicParameter Symbol Value UnitThermal Resistance ，Junction-to-Case （Maximum ） R thJC 2.7 4.4 °C /WThermal Resistance ，Junction-to-Ambient （Maximum ）R thJA62 80 °C /WTable 3. Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOn/off statesDrain-Source Breakdown VoltageBV DSSV GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) I DSS V DS =600V,V GS =0V1μAZero Gate Voltage Drain Current(Tc=125℃) I DSS V DS =600V,V GS =0V 50 μA Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V±100nAGate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2.5 3 3.5 V Drain-Source On-State Resistance R DS(ON)V GS =10V, I D = 2.5A 1000 1200m ΩDynamic CharacteristicsForward Transconductance g FS V DS = 20V, I D = 2.5A4SInput Capacitance C lss 280 PFOutput CapacitanceC oss 26 PFReverse Transfer Capacitance C rssV DS =50V,V GS =0V,F=1.0MHz2.3 PF Total Gate Charge Q g 6.5 10 nCGate-Source Charge Q gs 1.3 nCGate-Drain Charge Q gd V DS =480V,I D =4A,V GS =10V2.5 nC Intrinsic gate resistance R Gf = 1 MHz open drain2.5ΩSwitching timesTurn-on Delay Time t d(on) 6 nSTurn-on Rise Time t r 3 nS Turn-Off Delay Time t d(off) 48 60 nSTurn-Off Fall Timet fV DD =380V,I D =2.5A, R G =20Ω,V GS =10V 8 15 nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode) I SD 4 APulsed Source-drain current(Body Diode) I SDMT C =25°C12 A Forward On Voltage V SD Tj =25°C,I SD =4A,V GS =0V1 1.3 V Reverse Recovery Time t rr 150 nS Reverse Recovery Charge Q rr 0.85 uCPeak reverse recovery currentI rrmTj=25°C,I F =4A,di/dt=100A/μs 11 ANotes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature2. Tj=25℃,VDD=50V,VG=10V, R G =25ΩTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)Figure1. Safe operating area for TO-220,TO-263 Figure2. Source-Drain Diode Forward VoltageFigure3. Output characteristics Figure4. Transfer characteristicsFigure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction TemperatureFigure7. BV DSS vs Junction Temperature Figure8. Maximum I D vs Junction TemperatureFigure9. Gate charge waveforms Figure10. CapacitanceFigure11. Transient Thermal Impedance for TO-220,TO-263 Figure12. Safe operating area for TO-220FFigure13. Transient Thermal Impedance for TO-220FTest circuit1）Gate charge test circuit & Waveform2）Switch Time Test Circuit：3）Unclamped Inductive Switching Test Circuit & WaveformsTO-263-2L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.470 4.670 0.176 0.184A1 0.000 0.150 0.000 0.006B 1.170 1.370 0.046 0.054b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.05410.310 0.394 0.406D 10.010E 8.500 8.900 0.335 0.350e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.20415.450 0.593 0.608L 15.050L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REFTO-220-3L-C Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.0550.390 0.40410.250D 9.910E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150TO-220F Package InformationNCE60R1K2,NCE60R1K2D,NCE60R1K2F ATTENTION:■Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications.■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein.■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD.■Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use.■This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.。

产品特色大幅简化离线式LED驱动器设计●单级功率因数校正(PFC)与精确恒流(CC)输出相结合●输入/输出电容和变压器体积小●一次侧反馈控制，无需光耦电路，简化了电路设计●简化初级侧PWM调光接口●符合IEC61000-3-2标准高效节能和高兼容性●大幅提升效率，可达到85%以上●减少元件数量●总谐波失真<15%且PF>0.95●前沿、后沿和数字调光器●传感器和定时器精确稳定的性能●LED负载恒流精度不低于±5%●支持LED负载热插拔●1%-100%宽范围调光，调光无闪烁先进的保护及安全特性●通过自动重启动提供短路保护●开路故障检测模式●自动热关断重启动无论在PCB板上还是在封装上，都保证高压漏极引脚与其他所有信号引脚之间满足高压爬电要求应用●LED离线固态照明说明G7617 是一款的适用于LED调光控制的离线式两级交流/直流电源控制器，是适用于25W 输出功率的可调光LED 灯具的最优之选。

G7617符合电磁兼容性(EMC) IEC61000-3-2 标准，在120V AC或230V AC输入电压下其功率因数(PF) 可达到0.95 以上。

采用先进的数控技术来检测调光器的类型和相位，为调光器提供动态阻抗的同时可调节LED发光亮度，自动检测调光器类型和相位，从而实现了业内与模拟及数字调光器最广泛的兼容性。

G7617工作于准谐振工作模式，工作效率高，可工作于前沿后沿调光模式，也可工作于R 型、R-C型或R-L型调光控制模式。

G7617 符合热插拔LED 模块的固态照明行业标准Zhaga，同时还集成了调光功能的映射选项（位于白炽灯替代灯的NEMA SSL6 调光曲线内）。

G7617 系列有两个版本：针对120V AC输入应用进行优化的G7617-00 和针对230V AC 应用进行优化的G7617-01。

订购信息应用框图图1典型应用内部框图Vcc VinVcbVT CFGASU BisenseBdrvFdrvFisensePGNDAGND C O R E图2 内部框图引脚功能描述BV SENSE V IN BI SENSE B DRV CFG ASU V CCV CBV TFV SENSEFI SENSEF DRVAGNDPGND 图3. 引脚布局BV SENSE引脚：PFC电感电压反馈点，用于感知Boost电感的磁通状态。

低电压，单电源，4合1多路复用器，高性能模拟开关概述Intersil ISL43640是精密，双向模拟开关，配有4通道多路复用器/多路信号分离器。

ISL43640工作在+2V到+12V的单电源下。

它设有抑制管脚，可同时打开所有的信号通道。

ON电阻在+5V电源下，为115Ω；+12V电源下，为45Ω；+3V电源下，为190Ω。

每个开关都能够处理轨对轨模拟信号。

漏放电流在25℃下只有1nA，在85℃下为2.5nA。

使用+5V单电源时，所有的数字输入有0.8V到2.4V的逻辑门限，以保证TTL/CMOS的逻辑兼容性。

Intersil 最新的低电压开关采用小封装以减小电路板空间的限制，使其成为理想的解决方案。

表1概括了这一开关的性能。

相关文献技术摘要TB363“处理和加工对湿度敏感的表面安装器件（SMDs）的准则”应用笔记AN557“模拟开关的建议测试过程”应用笔记AN520“CMOS模拟多路复用器和开关；规格和应用注意事项”应用笔记AN1034“模拟开关的多路复用器的应用”特点完全适用于10%容差的3V，5V和12V的电源最大ON电阻（R ON），Vs=5V…………………………… 120Ω与信道匹配的R ON (2)低电荷注入………………………………………………… 3pC（最大）单电源工作……………………………………………… +2V到+12V低功率消耗（P D）………………………………………… <3μW低漏放电流………………………………………………… 2.5nA快速开关动作（Vs=5V）-- t ON………………………………………………………… 60ns-- t OFF………………………………………………………… 30ns保证无断线可兼容TTL和CMOS采用10引脚MSOP和16引脚QFN封装无铅封装应用电池供电，手提和便携式设备通信系统——无线电收音机——电信基础结构——ADSL，VDSL调制解调器测试设备——医学超声波——心电图仪——磁共振成像——CT和PET扫描器（MRI）——自动测试设备音频和视频转换多种电路——+3V/+5V数模转换器和模数转换器——抽样和保持电路——运算放大器增益转换电路——高频模拟转换——高速多路复用——积分复位电路引脚图注：1. 所示开关为逻辑“0”输入真值表≤注：逻辑“0”0.8V，逻辑“1”≥ 2.4V，Vs在3.3V和11V之间。