RD-1212D中文资料

March 2006 Rev 11/99STTH1212Ultrafast recovery - 1200 V diodeMain product characteristicsFeatures and benefits■Ultrafast, soft recovery■Very low conduction and switching losses ■High frequency and/or high pulsed current operation■High reverse voltage capability ■High junction temperatureDescriptionThe high quality design of this diode has produced a device with low leakage current,regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.Such demanding applications include industrial power supplies, motor control, and similarmission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.Order codesI F(AV)12 A V RRM 1200 V T j 175° C V F (typ) 1.25 V t rr (typ)50 nsPart Number Marking STTH1212D STTH1212D STTH1212G STTH1212G STTH1212G-TRSTTH1212GCharacteristics STTH12122/91 CharacteristicsTo evaluate the conduction losses use the following equation: P = 1.5 x I F(AV) + 0.033 I F 2(RMS)Table 1.Absolute ratings (limiting values at 25° C, unless otherwise specified)Symbol ParameterValue Unit V RRM Repetitive peak reverse voltage 1200V I F(RMS)RMS forward current30A I F(AV)Average forward current, δ = 0.5T c = 130° C12A I FRM Repetitive peak forward current t p = 5 µs, F = 5 kHz square 160A I FSM Surge non repetitive forward current t p = 10 ms Sinusoidal100A T stg Storage temperature range-65 to + 175°C T jMaximum operating junction temperature175°CTable 2.Thermal parameterSymbol ParameterValue Unit R th(j-c)Junction to case1.6°C/WTable 3.Static electrical characteristicsSymbol ParameterTest conditionsMin.TypMax.Unit I R (1)Reverse leakage currentT j = 25° C V R = V RRM10µAT j = 125° C 770V F (2)Forward voltage dropT j = 25° CI F = 12 A2.2V T j = 125° C 1.30 2.0T j = 150° C1.251.91.Pulse test: t p = 5 ms, δ < 2 %2.Pulse test: t p = 380 µs, δ < 2 %STTH1212Characteristics3/9Table 4.Dynamic characteristicsSymbolParameterTest conditionsMin.TypMax.Unitt rrReverse recovery timeI F = 1 A, dI F /dt = -50 A/µs, V R = 30 V , T j = 25° C 100nsI F = 1 A, dI F /dt = -100 A/µs,V R = 30 V , T j = 25° C 5070I RM Reverse recovery current I F = 12 A, dI F /dt = -200 A/µs,V R = 600 V , T j = 125° C 1624A S Softness factor I F = 12 A, dI F /dt = -200 A/µs,V R = 600 V , T j = 125° C 2t fr Forward recovery time I F = 12 A dI F /dt = 50 A/µs V FR = 1.5 x V Fmax , T j = 25° C 400ns V FPForward recovery voltageI F = 12 A, dI F /dt = 50 A/µs,T j = 25° C6VFigure 1.Conduction losses versusFigure 2.Forward voltage drop versusCharacteristicsSTTH12124/9Figure 3.Relative variation of thermal impedance junction to caseFigure 4.Peak reverse recovery current versus dI F /dt (typical values)Figure 5.Reverse recovery time versusFigure 6.Reverse recovery charges versusFigure 7.Softness factor versus dI F /dt (typical values)Figure 8.Relative variations of dynamic parameters versus junctionSTTH1212Characteristics5/9Figure 9.Transient peak forward voltageFigure 10.Forward recovery time versus dI F /dtFigure 11.Junction capacitance versusreverse voltage applied (typical values)Figure 12.Thermal resistance junction toambient versus copper surface under tab (Epoxy printed circuitPackage mechanical data STTH1212 2 Package mechanical dataEpoxy meets UL94, V0Cooling method: by conduction (C)Recommended torque value: 0.55 Nm (TO-220AC)Maximum torque value: 0.7 Nm (TO-220AC)6/9STTH1212Package mechanical data22In order to meet environmental requirements, ST offers these devices in ECOP ACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOP ACK is an ST trademark.ECOP ACK specifications are available at: .7/9Ordering information STTH12128/93 Ordering information4 Revision historyPart Number Marking Package Weight Base qtyDelivery modeSTTH1212D STTH1212D TO-220AC 1.86 g 50Tube STTH1212G STTH1212G D 2P AK 1.48 g 50Tube STTH1212G-TRSTTH1212GD 2P AK1.48 g1000Tape & reelDate RevisionDescription of Changes02-Mar-20061First issue.STTH1212Please Read Carefully:Information in this document is provided solely in connection with ST products. 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SANYO Electric Co.,Ltd. Semiconductor Bussiness HeadquatersTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPANPNP/NPN Epitaxial Planar Silicon TransistorsOrdering number:990Cre t e m a r a P l o b m y S sn o i t i d n o C sg n i t a R t i n U e g a t l o V e s a B -o t -r o t c e l l o C V O B C 06)–(V e g a t l o V r e t t i m E -o t -r o t c e l l o C V O E C 03)–(V e g a t l o V e s a B -o t -r e t t i m E V O B E 6)–(V t n e r r u C r o t c e l l o C I C 21)–(A )e s l u P (t n e r r u C r o t c e l l o C I P C 02)–(A n o i t a p i s s i D r o t c e l l o C P C57.1W 53We r u t a r e p m e T n o i t c n u J j T 051er u t a r e p m e T e g a r o t S gt s T 051+o t 55–( ) : 2SB903SpecificationsAbsolute Maximum Ratings at Ta = 25˚CPackage Dimensionsunit:mm 2010C[2SB903/2SD1212]Applications· Suitable for relay drivers, high-speed inverters,converters, and other general large-current switching applications.Features· Low collector-to-emitter saturation voltage : V CE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. ·Large current capacity.˚C ˚CElectrical Characteristics at Ta = 25˚CJEDEC : TO-220AB 1 : Base EIAJ : SC-462 : Collector3 : EmitterTc=25˚Cre t e m a r a P l o b m y S sn o i t i d n o C sg n i t a R t i n U ni m py t x a m t n e r r u C f f o t u C r o t c e l l o C I O B C V B C I ,V 04)–(=E 0=1.0)–(A m t n e r r u C f f o t u C r e t t i m E I O B E V B E I ,V 4)–(=C 0=1.0)–(Am n i a G t n e r r u C C D h E F 1V E C I ,V 2)–(=C A 1)–(=*07*082h E F 2V E C I ,V 2)–(=C A 6)–(=03tc ud o r P h t d i w d n a B -n i a G f TV E C I ,V 5)–(=C A1)–(=021zH M * : The 2SB903/2SD1212 are graded as follows by h FE at 1A :41Q7002R01082S41Switching Time Test CircuitUnit (resistance : Ω, capacitance : F)re t e m a r a P l o b m y S sn o i t i d n o C sg n i t a R t i n U ni m py t x a m e g a t l o V n o i t a r u t a S r e t t i m E -o t -r o t c e l l o C V )t a s (E C I C I ,A 5)–(=B A52.0)–(=)5.0–(V 4.0V e g a t l o V n w o d k a e r B e s a B -o t -r o t c e l l o C V O B C )R B (I C I ,A m 1)–(=E 0=06)–(V e g a t l o V n w o d k a e r B r e t t i m E -o t -r o t c e l l o C V O E C )R B (I C R ,A m 1)–(=E B =∞03)–(V e g a t l o V n w o d k a e r B e s a B -o t -r e t t i m E V OB E )R B (I E I ,A m 1)–(=C 0=6)–(V e m i T N O -n r u T t no ti u c r i C t s e T d e i f i c e p s e e S )1.0(s µ2.0s µe m i T e g a r o t S t g t s t i u c r i C t s e T d e i f i c e p s e e S )3.0(s µ5.0s µem i T l l a F t fti u c r i C t s e T d e i f i c e p s e e S 30.0sµSpecifications of any and all SANYO products described or contained herein stipulate the performance, characteristics,and functions of the described products in the independent state,of the performance,characteristics,and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co.,Ltd. strives to supply high-quality high-reliability products. However, semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives,。