IRG4PC30KPBF;中文规格书,Datasheet资料

ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current Q32AILMClamped Inductive Load Current R 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT4/24/2000• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generation• IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB packageBenefitsPD -91599AParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 2.1R θJC Junction-to-Case - Diode–––––– 3.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80WtWeight–––2 (0.07)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsW• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGBC20KD2 and IRGBC20MD2 products• For hints see design tip 97003 1IRG4BC20KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on)— 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—1421V GE = 15V t d(on)Turn-On Delay Time —54—t r Rise Time —34—T J = 25°Ct d(off)Turn-Off Delay Time —180270I C = 9.0A, V CC = 480V t f Fall Time —72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss —0.34—Energy losses include "tail"E off Turn-Off Switching Loss —0.30—mJ and diode reverse recovery E ts Total Switching Loss —0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time —51—T J = 150°C,See Fig. 11,14t rRise Time—37—I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time —220—V GE = 15V, R G = 50Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss—0.85—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —450—V GE = 0V C oes Output Capacitance—61—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —3755ns T J = 25°C See Fig.—5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 3.5 5.0A T J = 25°C See Fig.— 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —65138nC T J = 25°C See Fig.—124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —240—A/µs T J = 25°C See Fig.During t b—210—T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.49—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.27 2.8I C = 9.0A V GE = 15V— 3.01—V I C = 16ASee Fig. 2, 5— 2.43—I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-10—mV/°CV CE = V GE , I C = 250µA g feForward Transconductance T 2.9 4.3—S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 600V——1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7VI C = 8.0A See Fig. 13— 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureCollector-to-Emitter CurrentFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.81.21.62.02.42.83.2FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRG4BC20KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s)r r 1101001001000fdi /dt - (A/µs)I - (A )I RR MIRG4BC20KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit Figure20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.Case Outline TO-220AB0.55 (.022)0.46 (.018)3 X2.92 (.115)2.64 (.104)1.32 (.052)1.22 (.048)- B -4.69 (.185)4.20 (.165)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)1.15 (.045) M IN4.06 (.160)3.55 (.140)3 X3.96 (.160)3.55 (.140)3 X 0.93 (.037)0.69 (.027)0.36 (.014) M B A M10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)1.40 (.055)1.15 (.045)3 X2.54 (.100)2X1 2 34CONFORMS TO JEDEC OUTLINE TO-220ABD im e ns io ns in M illim e ters a nd (In c he s)LE A D A S S IG N M E N T S 1 - G A TE2 - C O LLE C TO R3 - EM IT TE R4 - C O LLE C TO RN O TE S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N TR O LLIN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C HES ).4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

DATA SHEETSMP1304 Series: Low-Distortion Attenuator Plastic Packaged PIN DiodesApplications•TV distribution•Attenuator circuitsFeatures•Low-distortion design•Frequency range from 5 MHz to >2 GHz•Designed for base station applications•Configured for PI and TEE attenuators•Packages rated MSL1 @ 260°C per JEDEC J-STD-020DescriptionThe SMP1304series of plastic packaged, surface mountable, lowcapacitance (0.3 pF) silicon PIN diodes is designed for attenuatorapplications from 5 MHz to beyond 2 GHz.The thick 100 μm I region of these PIN diodes makes them veryattractive for use in low-distortion PI and TEE attenuatorscommonly found in TV distribution applications.The 1 μs typical carrier lifetime of these diodes results in aresistance of 20 Ωmaximum at 1 mA and 7 Ωmaximum at10 mA.The SMP1304series is available in a selection of plasticpackages: as a single diode in small footprint SOD-323 and SC-79package s, and in a variety of configurations in an SOT-23package, including the low inductance (0.4 nH) SMP1304-007.The SMP1304-019, a three-diode junction designed for insertionin PI attenuators, is available in an SOT-143 package. TheSMP1304-027 is available in an SOT-5 package as a four-diodearray designed for insertion in commonly used four-diode PIattenuator circuits.Table 1 describes the various packages and marking of theSMP1304 series.Skyworks Solutions, Inc. • Phone [781] 376-3000• Fax [781] 376-3100 • sales@ • 200044M• Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • May 17, 20111DATA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 2May 17, 2011 • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • 200044M(Sn/Pb) packaging is not recommended for new designs .Innovation to Go™Select Linear Products (indicated by ♦) now available for purchase online.SMP1304-007The inductance of the SMP1304-007 is effectively reduced to 0.4 nH compared to the 1.5 nH of the standard configuration. The lower inductance is particularly beneficial when the diodes are used as shunt -connected switches at frequencies >500 MHz where inductance is the primary limitation on maximum switch isolation.To achieve the effective 0.4 nH, the SMP1304-007 must be inserted in the microstrip circuit board with a gap in the trace as shown in Figure 1. Because of the polarity of the diode junction, the low inductance can only be achieved with the cathode connected to ground.Figure 1. SOT-23 Package Trace GapFigure 2. SMP1304-019 Package (PI)SMP1304-019 PI Attenuator PIN DiodesThe SMP1304-019 uses three PIN diode junctions in an SOT -143 package (see Figure 2). The junctions are configured for ease ofinsertion in PI attenuator circuits in common use from 10 MHz to >1 GHz. The SMP1304-019 PIN diode junction was designed for low capacitance, a wide resistance dynamic range, and low distortion performance.Electrical and Mechanical SpecificationsThe absolute maximum ratings of the SMP1304 series are provided in Table 2. Electrical specifications are provided in Table 3. Resistance versus temperature measurements are provided in Table 4.Typical performance characteristics of the SMP1304 series are illustrated in Figures 3 to 6. Package dimensions are shown in Figures 7 to 15 (odd numbers), and tape and reel dimensions are provided in Figures 8 to 16 (even numbers).Package and Handling InformationInstructions on the shipping container label regarding exposure to moisture after the container seal is broken must be followed. Otherwise, problems related to moisture absorption may occur when the part is subjected to high temperature during solder assembly.The SMP1304 series is rated to Moisture Sensitivity Level 1 (MSL1) at 260 °C. It can be used for lead or lead -free soldering. For additional information, refer to the Skyworks Application Note, Solder Reflow Information , document number 200164 Care must be taken when attaching this product, whether it is done manually or in a production solder reflow environment. Production quantities of this product are shipped in a standard tape and reel format.DA TA SHEET • SMP1304 SERIESNote:Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times. TheSMP1304 series PIN diodes are Class 1C ESD devices.Table 3. SMP1304 Series Electrical Specifications (Note 1)Note 1:Performance is guaranteed only under the conditions listed in this Table.Note 2:The SMP1304-019 and SMP1304-027 maximum capacitance is 0.45 pF.Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 200044M• Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • May 17, 20113DATA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 4May 17, 2011 • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • 200044MTypical Performance CharacteristicsFigure 3. Series Resistance vs Current @ 100 MHzFigure 5. Capacitance vs Reverse VoltageFigure 4. DC CharacteristicFigure 6. Conductance vs Frequency and Reverse VoltageDA TA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 200044M • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • May 17, 20115Figure 7. SC-79 Package Dimension DrawingFigure 8. SC-79 Tape and Reel DimensionsDATA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 6May 17, 2011 • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • 200044MFigure 9. SOD-323 Package Dimension DrawingFigure 10. SOD-323 Tape and Reel DimensionsDA TA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 200044M • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • May 17, 20117Figure 11. SOT-5 Package Dimension DrawingFigure 12. SOT-5 Tape and Reel DimensionsDATA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 8May 17, 2011 • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • 200044MFigure 13. SOT-23 Package Dimension DrawingFigure 14. SOT-23 Tape and Reel DimensionsDA TA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 200044M • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • May 17, 20119Figure 15. SOT-143 Package Dimension DrawingFigure 16. SOT-143 Tape and Reel DimensionsDATA SHEET • SMP1304 SERIESSkyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 10May 17, 2011 • Skyworks Proprietary I nformation • Products and Product Information are Subject to Change Without Notice • 200044MCopyright © 2002-2007, 2009, 2010, 2011 Skyworks Solutions, Inc. All Rights Reserved.Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by Skyworks as a service to its customers and may be used for informational purposes only by the customer. Skyworks assumes no responsibility for errors or omissions in these materials or the information contained herein. Skyworks may change its documentation, products, services, specifications or product descriptions at any time, without notice. Skyworks makes no commitment to update the materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes.No license, whether express, implied, by estoppel or otherwise, is granted to any intellectual property rights by this document. Skyworks assumes no liability for any materials, products orinformation provided hereunder, including the sale, distribution, reproduction or use of Skyworks products, information or materials, except as may be provided in Skyworks Terms and Conditions of Sale.THE MATERIALS, PRODUCTS AND INFORMATION ARE PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, WHETHER EXPRESS, IMPLIED, STATUTORY, OR OTHERWISE, INCLUDING FITNESS FOR A PARTICULAR PURPOSE OR USE, MERCHANTABILITY, PERFORMANCE, QUALITY OR NON -INFRINGEMENT OF ANY INTELLECTUAL PROPERTY RIGHT; ALL SUCH WARRANTIES ARE HEREBY EXPRESSLY DISCLAIMED. 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Third -party brands and names are for identification purposes only, and are the property of their respective owners. Additional information, including relevant terms and conditions, posted at , are incorporated by reference.分销商库存信息:SKYWORKS-SOLUTIONSSMP1304-004LF SMP1304-027LF。