RF_POWER_AMPLIFIER

毕业论文（设计）论文（设计）题目：2.4GHz射频功率放大器的设计目录中文摘要 (1)Abstract (2)第一章绪论 (3)第二章理论基础 (5)2.1 二端口网络 (5)2.2 技术指标 (6)2.2.1 输出功率 (7)2.2.2 功率增益 (8)2.3 匹配网络 (9)2.3.1共轭匹配 (11)2.3.2负载牵引 (11)2.4 传输线理论简介 (12)2.5 ADS软件简介 (12)第三章电路设计 (14)3.1器件选型和功率分配 (14)3.1.1器件选型 (14)3.1.2 功率和增益分配 (14)3.2 单级放大器设计 (15)3.2.1功率级（Power stage）设计 (15)3.2.2驱动级（Driver stage）设计 (23)3.2.3 两级功率放大器系统设计 (26)第四章总结与展望 (29)谢辞 (30)参考文献 (31)附录翻译 (33)中文摘要近年来，RFID技术的应用在全球掀起一场热潮。

2.4G技术标准由于它的广泛应用，更是成为技术和市场领域的宠儿。

RFID最重要的部分是发射机，而射频功率放大器作为发射机的核心部件，它的性能是制约整个RFID系统性能和技术水平的关键因素。

本文介绍了基于ADS用于RFID系统的2.4GHz射频功率放大器的硬件电路设计方法。

整个系统以MOSFET器件为核心功放晶体管，在2.4GHz、工作电压为3.3V 条件下，采用两级功放级联方式，前端驱动级工作于小信号状态，为后端提供高功率增益，后端功率级工作于大信号，提供高功率输出。

级联之后的效果是实现了27dB功率增益和高达近27dBm功率输出。

该系统主要应用于超高频射频识别读写器系统。

本文深入探讨了整体硬件电路的设计方案，详细阐述了电路设计的原理和方法，最后给出了具体的实现过程。

关键词：GaAs FET；RFID；ADS；2.4G无线系统；射频功率放大器AbstractIn recent years, RFID technology has led to a boom in the world. 2.4G technology standard has become a cosset of the technology and market field, just because of its wide range of applications. Transmitter is the most important part of the RFID system. As the core component of a transmitter, the performance of RFPA becomes to the key factor restricting capability and technical level of the whole RFID systemThis paper introduces a method of 2.4GHz RFPA hardware circuit designing used in RFID system based on ADS. The entire system using MOSFET component as the core power transistor contains two-stage cascade amplifiers working in 3.3V supply voltage, 2.4GHz. The driver-level works in small-signal state, providing high power gain for the back-end; power-level works in large-signal state, providing high output-power for the load. The effect after cascade is to achieve a 27dB power gain and a 27dBm output-power.We discuss the blue print of the overall hardware circuit design in this paper, expatiate the principles and methods of circuit design in detail, and finally give a concrete realization of the process.Key words: GaAs FET; RFID; ADS; 2.4G wireless system; RF Power Amplifier第一章绪论随着人类社会进入信息时代，无线通信技术有了飞速的发展，尤其是射频微波通信技术的产生和发展无疑对无线通信技术的发展起到了决定的作用。

射频学习参考书微波振荡器设计经典英文原版书籍五本1. RF and Microwave Oscillator DesignMichal Odyniec, Artech House, Inc. 20022. Oscillator Design and Computer SimulationRandall W. Rhea, Noble Publishing Corporation, 19953. Crystal Oscillator Circuits, Revised EditionRobert J. Matthys, Krieger Publishing Company, 19924. Crystal Oscillator Design and Temperature CompensationMarvin E. Frerking, Litton Educational Publishing, 19785. Fundamentals of RF Circuit Design with Low Noise OscillatorsJeremy Everard, John Wiley & Sons Ltd, 2001经典中文书籍三本1. 《微波振荡源》陈为怀、李玉梅著，2. 《微波固态振荡原理》潘儒沧、刁育才著，3. 《介质谐振器微波电路》4. 《S参数设计放大器和振荡器》设计实例和设计讲义1. 使用ADS设计VCO讲义2. VCO Design using Ansoft Designer3. Oscillator Basics and Low-Noise Techniques for Microwave Oscillators and VCOs4. Oscillator Phase Noise: A Tutorial5. 东南大学振荡器讲义6. 高頻振盪器之簡介滤波器设计经典中文书籍三本：1. 《微带电路》，清华大学《微带电路》编写组，人民邮电出版社,19792. 《现代微波滤波器的结构与设计》上册，甘本袚、吴万春著，科学出版社，19733. 《现代微波滤波器的结构与设计》下册，甘本袚、吴万春著，科学出版社，1973经典英文原版书籍三本：1. HF Filter Design and Computer SimulationRandall W. Rhea, Noble Publishing Corporation, 19942. Microstrip Filters for RF/Microwave ApplicationsJia-Sheng Hong, M. J. Lancaster, John Wiley & Sons Inc. 20013. Microwave Filters, Impedance Matching networks and Coupling StructuresGeorge L. Matthaei, Leo Young, E. M. T. Jones, Artech House, INC. 1980设计实例：1. ADS2003C关于微波滤波器设计和制作实例（中文56页）2. Ansoft Designer 关于微波滤波器设计和制作实例（英文43页）3. 微带抽头线发夹型滤波器设计4. Practical T echniques for Designing Microstrip Tapped Hairpin Filters on FR4 Laminates5. Design of Band Pass Filters With Ansoft HFSS and Serenade6. 浙大微波滤波器设计讲义微波功率放大器 ( PA ) 设计经典英文原版书籍八本1. Advanced Techniques in RF Power Amplifier DesignSteve C. Cripps, ARTECH HOUSE, INC. 20022. Radio Frequency Transistors and Practical Applications, Second EditionNorman Dye, Helge Granberg, Newnes, 20013. Feedback Linearization of RF Power AmplifiersJOEL L. DAWSON, THOMAS H. 4. LEE, KLUWER ACADEMIC PUBLISHERS, 20044. High Linearity RF Amplifier DesignPeter B. Kenington, ARTECH HOUSE, INC. 20005. RF Power Amplifier for Wireless CommunicationsSteve C. Cripps, ARTECH HOUSE, INC. 19996. RF Power AmplifiersMihai Albulet, Noble Publishing Corporation, 20017. Distortion in RF Power AmplifiersJoel Vuolevi, Timo Rahkonen, Artech House, Inc. 20038. Microwave Engineering, second editionDavid M. Pozar, JOHN WILEY & SONS, INC.,1998设计讲义：1. 清华大学功放设计讲义2. 东南大学功放设计讲义3. 浙江大学功放设计讲义4. MESFET 功率放大器设计：小信号法。

射频模拟电路答案【篇一：02如何快速入门电子技术】>作者：刘昆山众所周知，学习讲究方法，方法对了，事半功倍，越学越有味。

方法不对，耗时耗力，困难重重，且可能随时让你产生放弃的念头。

万事开头难，同样，学电子技术的关键在于入门，故电子初学者首先要解决的就是如何快速入门的问题。

针对此，本人在这里做一个简单的阐述。

学习电子技术必须注重“理论+实践”的方法。

如果只学理论知识而不动手操作，则收效甚微；如果只进行实践操作而不学习理论知识，效果也不明显。

因此，学好电子技术必须做到理论、实践同时学，即既进行理论知识的学习又进行实践动手能力的充分锻炼。

一、如何快速学理论知识很多电子初学者最头痛的一件事，就是学理论知识，有些朋友索性就避开理论不学。

可要知道，不学理论而只动手操作，就像“无源之水”、“无本之木”，是很难真正掌握电子技术。

要学好电子技术，必须学好电子基础理论知识。

看书是最基本的学习方法，但是看书往往费时费脑，且不容易入门。

请身边的朋友帮忙指点下，朋友不一定会倾其全心，即使想倾其全心，也不一定能倾其全力，因为他不一定有时间。

下面推荐四部视频教程，这里面涵盖了电子专业必修的电子基础理论知识：1、电路分析基础(电子科大)钟洪声主讲的视频教程；2、模拟电子电路设计(电子科大)曲建主讲的视频教程；3、数字电子基础(电子科大)金燕华主讲的视频教程；4、射频模拟电路全集(电子科大)杨玉梅主讲的视频教程。

有了这四部视频教程，任何人都可以自学入门电子技术，打下坚实的理论基础，为以后成为电子工程师提供基础理论知识和实践操作能力。

二、如何快速掌握实践动手能力我们都知道，光有理论不会实践、不会动手，学了等于白学。

那如何提高实践动手能力呢？很多电子爱好者为此非常困惑，下面我来为大家解决这个问题。

我们主张电子技术初学者最好用万能板焊接电子制作产品，因为这种电子制作的方法，不仅能练习焊接技术，同时还能提高识别电路图和分析原理图的能力，为日后维修、设计电子产品打下坚实的基础。

射频放大器的9个主要性能指标RF PA(radio frequency power amplifier)是各种无线发射机的重要组成部分。

在发送机的前级电路中，调制振荡电路产生的射频信号的功率非常小，需要经过一系列放大一缓冲级、中间放大级、最终级的功率放大级，得到足够的射频功率后，提供给天线进行辐射。

为了得到足够大的射频输出功率，射频功率放大器常常扮演着不可或缺的作用。

那么，射频放大器的主要指标有哪些呢？射频放大器结构射频放大器的9个主要性能指标1、输出功率和1dB压缩点(P1dB)输入功率超过一定值时，晶体管的增益开始下降，最终输出功率饱和。

如果放大器的增益偏离常数或低于其他小信号增益1dB，这个点就是1dB压缩点(P1dB)。

放大器的功率容量通常用1dB的压缩点表示。

2、增益工作增益是测量放大器放大能力的主要指标。

增益的定义是放大器输出端口传输到负载的功率与信号源实际传输到放大器输入端口的功率之比。

增益平坦度是在一定温度下放大器增益在整个工作频带内变化的范围，也是放大器的主要指标。

3、工作频率范围一般是指放大器的线性工作频率范围。

当频率从DC开始时，放大器被认为是直流放大器。

4、效率放大器是功率元件，所以需要消耗供电电流。

因此，放大器的效率对整个系统的效率非常重要。

功率效率是放大器的高频输出功率与提供给晶体管的直流功率之比。

NP=RF输出功率/直流输入功率。

5、交条失真(IMD)交条失真是具有不同频率的两个或更多个输入信号通过功率放大器而产生的混合分量。

这是因为放大器的非线性特点。

其中，三阶交条产物特别接近基波信号，影响最大，因此交条失真中最重要的是三阶交，当然，三阶交条产物越低越好。

6、三阶交条截止点(IP3)图2中基波信号的输出功率延长线与三阶交条延长线的交点称为三阶交条截止点，用符号IP3表示。

IP3也是放大器非线性的重要指标。

输出功率一定时，三阶交条截止点的输出功率越大，放大器的线性度越好。

射频技术的基本原理和应用1. 引言射频技术（Radio Frequency，简称RF）是一种用于对无线电频率范围内的信号进行传输和处理的技术。

射频技术广泛应用于无线通信、雷达系统、无线电频谱测量和信号处理等领域。

本文将介绍射频技术的基本原理以及在各个领域中的应用。

2. 射频技术的基本原理射频技术的基本原理包括信号传输、调制解调和射频功率放大。

下面将逐步介绍这些基本原理。

2.1 信号传输射频技术中的信号传输是指将信息从一个地方传输到另一个地方，通常通过无线电波进行传输。

这种传输可以是单向的，也可以是双向的。

在信号传输过程中，常见的模拟调制技术包括频移键控（Frequency Shift Keying，简称FSK）、相移键控（Phase Shift Keying，简称PSK）和振幅调制（Amplitude Modulation，简称AM）。

而数字调制技术则包括调幅键控（Amplitude Shift Keying，简称ASK）、频率键控（Frequency Shift Keying，简称FSK）和相位键控（Phase Shift Keying，简称PSK）等。

2.2 调制解调调制解调是指将信号转换为适合于传输和接收的形式。

调制是指将基带信号叠加到载波信号上，以便将信号传输到目标设备。

解调则是指将接收到的信号从载波信号中分离出来，并恢复原始信息。

常见的调制解调技术包括调幅和调频。

2.3 射频功率放大射频功率放大是指将射频信号的功率放大到适合于传输和接收的水平。

射频功率放大器通常用于增强信号的强度，以便在大范围内传输数据。

射频功率放大器可以是线性功率放大器（Linear Power Amplifier，简称LPA）或非线性功率放大器（Non-Linear Power Amplifier，简称NLPA）。

3. 射频技术的应用3.1 无线通信射频技术在无线通信中得到广泛应用，包括手机通信、无线局域网（Wireless LAN，简称WLAN）和卫星通信等。

OWNER’S MANUALModel 5100F RF POWER AMPLIFIER 0.8 – 2.5 GHz, 25 WattsOphir RF5300 Beethoven Street Los Angeles, CA 90066 USATel.: (310) 306-5556FAX: (310) 577-9887 E-mail: ***************** Website: OM_5100F 12/12/011981___________________________________________________ CertificationOphir RF certifies that this product met its published specifications at the time of shipment from the factory._____________________________________________________________________ WarrantyThis Ophir RF product is warranted against defects in material and workmanship for a period of two (2) years from date of receipt. During the warranty period, Ophir RF, will,at its option, either repair or replace products that prove to be defective. For warranty service or repair, this product must be returned to a service facility designated by Ophir RF.Limitation of WarrantyThe foregoing warranty shall not apply to defects resulting from improper orinadequate maintenance by Buyer, Buyer-supplied software or interfacing,unauthorized modification or misuse, operation outside of the environmentalspecifications for the product, or improper site preparation or maintenance.NO OTHER WARRANTY IS EXPRESSED OR IMPLIED. OPHIR RF SPECIFICALLY DISCLAIMS THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.Exclusive RemediesTHE REMEDIES PROVIDED HEREIN ARE BUYER’S SOLE AND EXCLUSIVEREMEDIES. OPHIR RF SHALL NOT BE LIABLE FOR ANY DIRECT,INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, WHETHER BASED ON CONTRACT, TORT, OR ANY OTHER LEGAL THEORY._____________________________________________________________________ AssistanceFor any assistance, contact your Ophir RF Sales and Service Office.OM_5100F 12/12/01 Page 1 of 14_____________________________________________________________________ Safety InformationThe following safety notes and symbol are used in this manual and on the equipment. Familiarize yourself with each and its meaning before operating this equipment.Caution Caution denotes a hazard. It calls attention to a procedure that, if not correctly performed or adhered to, would result in damage to, ordestruction of, the equipment. Do not proceed beyond a caution noteuntil the indicated conditions are fully understood and met._____________________________________________________________________ Warning Warning denotes a hazard. It calls attention to a procedure which, if not correctly performed or adhered to, could result in injury or lossof life. Do not proceed beyond a warning note until the indicatedconditions are fully understood and met._____________________________________________________________________The instruction documentation symbol. The product is marked with thissymbol when it is necessary for the user to refer to the instructions in thedocumentation._____________________________________________________________________ General Safety ConsiderationsWarning This is a safety Class I product provided with a protective earthing ground incorporated in the AC power cord. The AC power cordshall only be inserted in a socket outlet provided with a protectiveearth contact. Any interruption of the protective conductor, insideor outside of the equipment, is likely to make the equipmentdangerous. Intentional interruption is prohibited._____________________________________________________________________ Warning No operator serviceable parts inside. Refer servicing to qualified personnel. To prevent electrical shock, do not remove covers._____________________________________________________________________ Warning If this equipment is used in a manner not specified by Ophir RF, the protection provided by the equipment may be impaired._____________________________________________________________________ Caution Before switching on this equipment, make sure that the line voltage is correct and that an External Load has been applied. (Refer to 2.2.3)OM_5100F 12/12/01 Page 2 of 14ContentsSection PageInformation 5I GeneralDeclaration of Conformity 5Scope 5Description 5Equipment Specifications 6II Installation 7Incoming Inspection 7Preparation for Use 7Power Requirements 7Earthing 7Load Requirements 7Connections 7CableIII Operation 8Introduction 8AgainstUnspecified Use 8StatementControls, Indicators, and Connectors 8Basic Operating Procedures 8Before Turn On 8Turn On 9Operation 9Turn Off 9IV Maintenance 1010IntroductionTest 10PerformanceProcedures 10AdjustmentProcedures 10TroubleshootingImproper Power Distribution 10Low or No RF Output Power 10Cleaning 10Service 11V CustomerServicing 11Return11(RMA)MaterialAuthorizationShipment11forRepackaging12FormRequestRMAOM_5100F 12/12/01 Page 3 of 14Figuresdiagram 131 BlockFigureFigure 2 System View 14Tables6TableSpecifications1 EquipmentOM_5100F 12/12/01 Page 4 of 14SECTION IGeneral Information1.1 Declaration Of ConformityDECLARATION OF CE CONFORMITYOphir RF Inc., 5300 Beethoven Street, Los Angeles, CA 90066, declares under sole responsibility that the RF Power Amplifier, Model 5100F, to which this declaration relates, meets essential health and safety requirements and is in conformity with ISO 3864. The CE marking has been applied according to the relevant Safety and CE Directives listed below using the relevant section of the following EC standards and other normative documents:EU EMC DIRECTIVE 89/366/EEC - Essential health and safety requirements relating to electromagnetic compatibilityENEN55022 Class BEN50082-1 EC generic immunity requirements, Category A & BIEC801-2, IEC801-3, IEC801-4EC Low Voltage Directive 72/23/EEC Essential health and safety requirements relating to electrical equipment designed for use within certain violate limits.EN61010-1 Safety requirements of Test Measurement and LaboratoryEquipment.1.2 ScopeThis owner’s manual contains operating instructions for a model 5100F amplifier.1.3 DescriptionThe power amplifier operates in the RF frequency. The input to the power amplifier is rated at 0 dBm nominal CW signal between the 0.8 – 2.5 GHz frequency range. The output of the power amplifier is specified at 25 Watts CW RF signal. Detailed specifications for the power amplifier are given in table 1-1. OM_5100F 12/12/01 Page 5 of 14Equipment SpecificationsTable 1-1. Specifications @ 25º COperation:A/ABofClass2.5GHz–Range:Frequency0.8Output Power @ Saturation: 25 Watts CW TypicalOutput Power @ 1 dB Compression: 20 Watts CW minimumdB+45minimumGain:SmallSignalSmall Signal Gain Flatness: ± 2.0 dB maximumnominalohmsInput/OutputImpedance:50Input VSWR: 2:1 maximumdBmInput +10RFMax.Operating Temperature Range: 0º C to 50º COperating Humidity Range: 95%, Non-condensingTemp. Protection: Shut down @ 80º C minimumAirForcedCoolingsystem:InternalAC Input: 100 - 240 VAC, 50/60 Hz, 1¯Wattsmaximum200ACPower:InputDimensions: 19" W x 3.5" H x 18" DmaximumPoundsWeight: 30Option(s) included:-Type-N Connectors on Front Panel.*NOTE – Specifications subject to change without noticeOM_5100F 12/12/01 Page 6 of 14SECTION IIInstallationInspection2.1 IncomingWARNING!Do not apply power until you have read Sections II and III and you have performed all specified procedures. If you fail to observe this warning, damage to the equipment and/or bodily injury may result.The power amplifier has been mechanically and electrically inspected prior to shipment. If the equipment has been damaged or if electrical performance is not within specification, notify the carrier and OPHIR RF immediately.2.2 Preparation For Use2.2.1 Power RequirementsThe power amplifier requires a power source of 100 – 240 VAC, 50/60Hz capable of delivering 200 Watts. Turn off the front panel ‘ON/OFF’switch before connecting the AC power source.2.2.2 EarthingEarthing is achieved simultaneously with connection of the AC powercords to a properly grounded power source.2.2.3 Load RequirementsThe power amplifier requires a load, antenna, or dummy load with a 50-Ohm nominal impedance.CAUTION!Make this external load connection before applying any power to theequipment.2.2.4 Cable ConnectionsThe AC power cable connection is made at the rear of the poweramplifier via the receptacle connector. RF connections for Input andOutput are made at the front via Type-N connectors. (Refer to Figure 2) OM_5100F 12/12/01 Page 7 of 14SECTION IIIOperation3.1 IntroductionThis section describes the operating controls and procedures of the power amplifier.3.2 Statement Against Unspecified UseThis amplifier must be used as specified by the manufacturer. Use of this equipment in any way not specified by the manufacturer may result in bodily injury and/or damage to the equipment.3.3 Controls, Indicators, and ConnectorsWhen set to ‘ON’, the ON/OFF switch will light indicating that AC power is present. The RF INPUT and OUTPUT connections are located on the front of the power amplifier. Refer to figure 2 and the following discussion for the location and functional description of all controls, indicators, and connectors.3.4 Basic Operating ProceduresNOTE!The operation of the power amplifier is passive; that is, after an External Load and Input power have been applied, no procedures other than turn off are required.3.5 Before Turn OnCAUTION!Do not obstruct the airflow at the front and rear of the power amplifier. If you do not verify that this equipment has an unobstructed airflow, you may cause this equipment to overheat or otherwise impair its operation.Perform the following preliminary procedures before energizing the equipment:a. Check that the ON/OFF switch is set to the ‘OFF’ position.b. At the rear of the RF power amplifier, verify that the AC cord is properlyinserted into the receptacle connector.c. Verify that 50 ohm loads are connected to the RF Input and Output ports.3.6. Turn OnPerform the following procedures to energize the equipment:a. Set the ON/OFF switch to the ‘ON’ position. Verify that the green switchlamp is lit.b. Apply RF power.OM_5100F 12/12/01 Page 8 of 14CAUTION!To maintain specified performance and retain certain operating characteristics, RF input power should not exceed +10 dBm.3.7. Operation3.7.1 ON/OFF SwitchIn the ‘ON’ position, AC power is supplied to the power amplifier.3.7.2 ON/OFF Switch LampLights to indicate the distribution of AC power throughout the poweramplifier.3.7.3 TEMP. FAULT IndicatorLights at an internal temperature exceeding 80º C with the amplifierturning off DC bias voltage to the main amplifiers’ modules. DC biasvoltage will automatically return at temperatures below 75º C.Off.3.8 TurnWARNING!In the event of ANY power failure, whenever possible and practical, it is advisable to reset the ON/OFF switch on the front panel to the “OFF”position before y ou reconnect AC power to the power amplifier. This is to prevent any possible electrical damage to the amplifier, due to the initial power surge, once power is restored.Turn off the RF power amplifier by first lowering or removing the RF Input drive level and then placing the ON/OFF switch in the ‘OFF’ position.OM_5100F 12/12/01 Page 9 of 14Maintenance4.1 IntroductionThis section describes the performance tests, adjustments and troubleshooting procedures for the power amplifier.4.2 Performance TestThe performance test is identical to the operating procedure described in Section III.4.3 Adjustment ProcedureThere are no operator adjustments applicable for the power amplifier.4.4 Troubleshooting ProcedureNOTE!Troubleshooting beyond the level described in this procedure must be performed at an authorized service facility or the warranty may be voided.The following troubleshooting procedure is to be used as a guide to help ascertain whether the equipment is malfunctioning.4.4.1 Improper Power DistributionWhenever there appears to be improper power distributed throughout theamplifier, perform the following steps:a. Verify the ‘ON/OFF’ switch lamp is illuminated on the front panel.b. Verify that the internal fans are operating.c. If neither step A or B above appear to be working, verify the presenceof AC power at the source and also at rear panel connection.4.4.2 Low or No RF Output PowerWhenever the RF output power of the amplifier and/or the current drawnfrom the power supply is low, or the operating temperature has exceeded80°C, the system may have triggered the thermal protection function.Perform the following procedure:a. Verify that the drive level is correct.b. Check that the ‘TEMP. FAULT’ indicator is not illuminated.If the above conditions are verified and there is still low or no RF outputpower, then contact your nearest authorized Ophir RF Service Center. 4.5. CLEANINGUse a rag with isopropyl alcohol to clean exterior surfaces. Use a vacuum to remove dust from the screens on the front and rear of the equipment.Customer Service5.1 ServicingAll servicing and repair must be done by an authorized repair and servicing facility.5.2 Return Material Authorization (RMA)In the unlikely event you experience equipment difficulties that can not be resolved without opening up the equipment, you will need to obtain authorization and an RMA number prior to returning the equipment.NOTE!It is Ophir RF’s policy not to accept any returned equipment without an authorized RMA number!5.3 Repackaging for Shipment.WARNING!It is always recommended that two people carry this system due to its weight.Use the original shipping container and packing materials if possible. If these have been discarded or are not in good condition for reuse, use a heavy-duty carton capable of providing adequate protection. Whenever the amplifier is being returned to the manufacturer, attach an identifying tag, indicating the RMA number, on the outside of the container.Wrap the equipment in heavy paper or plastic, and use enough shock-absorbing material (3 to 4-inch layers) around all sides to provide a firm cushion and to prevent movement within the container. Protect the front and rear panels with cardboard or foam blocks. Seal the shipping container securely and mark the container "FRAGILE".To receive your RMA number, contact our customer service department.Customer ServicePhone: 310-306-5556Fax: 310-577-9887Email: ***************************You will be required to complete a simple questionnaire prior to receiving your RMA number. Once you have your RMA number, you are authorized to return your equipment.To help you expedite this process, we have included a copy of the form you will be required to complete prior to receiving your RMA number.5300 Beethoven Street, Los Angeles, CA 90066Tel: (310) 306-5556 • FAX (310) 577-9887 •e-mail:***************************RMA REQUEST FORMRMA NUMBER:NAME:CUSTOMERRECEIVEDROM RESS:F ADD(STREET ADDRESS – INCLUDING SUITE OR M/S NUMBER)(CITY – STATE – ZIP OR COUNTRY CODE) (COUNTRY)RETURN TOADDRESS:(STREET ADDRESS – INCLUDING SUITE OR M/S NUMBER)(CITY – STATE – ZIP OR COUNTRY CODE) (COUNTRY)CONTACT PERSON:(FIRST AND LAST NAME) (TITLE/RANK)(TELEPHONE) (FAX)(E-MAIL)MODEL NUMBER SERIAL NUMBERREASON FOR RMA:PLEASE FAX THIS FORM TO OPHIR RF, INC.AT (310) 577-9887 ATTN: CUSTOMER SERVICETHERE IS A $500 MINIMUM EVALUATION CHARGE FOR ALL NON-WARRANTY REPAIRS. PURCHASE ORDER TO BE PRESENTED PRIOR TO COMMENCEMENT OF REPAIRS. FOLLOWING EVALUATION, THE COST OF REPAIRS WILL BE SUBMITTED FOR YOUR APPROVAL AND PURCHASE ORDER AMENDMENT.DO NOT SHIP AMPLIFIERS C.O.D. – OPHIR RF WILL NOT ACCEPT ANY C.O.D. SHIPMENTS. PLEASE CALL US WITH ANY SHIPPING QUESTIONS.。

射频功率放大器芯片射频功率放大器（RF power amplifier）是一种用于放大射频信号的电子设备，广泛应用于无线通信系统、雷达系统、卫星通信系统、广播电视系统等领域。

它的主要作用是将输入的低功率射频信号放大到足够大的功率，以便能够远距离传输或驱动其他设备。

射频功率放大器芯片是射频功率放大器的核心元件，其主要功能是将输入的低功率射频信号放大到更高的功率。

射频功率放大器芯片通常由半导体材料制成，最常见的是使用金属氧化物半导体场效应管（MOSFET）或互补金属氧化物半导体（CMOS）技术。

射频功率放大器芯片通常具有以下特点：1. 宽带特性：射频功率放大器芯片能够在很宽的频段内进行工作，从几十兆赫兹到几千兆赫兹不等，能够适应不同的工作频段和应用需求。

2. 高功率增益：射频功率放大器芯片能够将输入信号的功率放大到较高的水平，通常能够提供几瓦到几十瓦的输出功率。

高功率增益可以确保信号的传输距离更远，同时也能够驱动各种外部设备。

3. 高效能率：射频功率放大器芯片通常能够实现较高的功率放大效率，能够将输入的电能有效地转化为输出的射频功率，减少能量的浪费，并减少热量的产生。

4. 低噪声：射频功率放大器芯片通常具有较低的噪声指标，能够保证输出信号的清晰度和稳定性，提高接收信号的质量。

5. 兼容性：射频功率放大器芯片通常具有较高的兼容性，能够适应不同的工作环境和系统要求，同时还能够与其他射频设备和控制电路进行连接和集成。

射频功率放大器芯片在无线通信系统中起着至关重要的作用。

它能够增强信号的强度和传输距离，保证信号的可靠传输，提高通信质量。

同时，射频功率放大器芯片还能够用于雷达系统中的信号增强、卫星通信系统中的信号放大、广播电视系统中的信号驱动等各种应用领域。

总之，射频功率放大器芯片是无线通信系统中至关重要的核心元件，它能够将输入的射频信号放大到足够大的功率，实现信号的长距离传输和驱动其他设备。

随着无线通信技术的发展和应用需求的增加，射频功率放大器芯片将会继续发展和创新，为无线通信领域的进一步发展做出重要贡献。

射频电源的功率调节技术研究与优化射频电源的功率调节技术研究与优化随着科技的不断发展，射频（Radio Frequency，RF）电源在无线通信、雷达系统和卫星通信等领域的应用越来越广泛。

在射频电源的设计和优化过程中，功率调节是一个重要的环节。

功率调节技术的研究与优化对于提高射频电源的性能和效率至关重要。

功率调节是指调节射频电源输出功率的过程。

在射频系统中，功率调节主要实现在射频功率放大器（RF Power Amplifier，PA）中。

射频功率放大器通常由多个功率调节级（Power Control Stage）组成。

每个功率调节级都具有一定的输出功率范围和调节能力。

功率调节技术的目标是在尽可能大的功率调节范围内，保证输出功率的稳定性和精确性，并最大限度地提高射频功率放大器的效率。

射频电源的功率调节技术主要包括直接功率调节技术和间接功率调节技术两种方法。

直接功率调节技术是直接调节射频功率放大器的输入信号强度来实现功率调节。

这种方法通常具有较高的调节带宽和快速响应时间，但在某些功率范围内可能存在效率低和线性度差等问题。

间接功率调节技术是通过增加或减小射频功率放大器的负载来实现功率调节。

这种方法一般具有较高的效率和较好的线性度，但在调节速度和带宽方面可能略逊于直接功率调节技术。

在功率调节技术的研究与优化过程中，需要考虑多个因素。

首先是功率调节的精确性和稳定性。

射频电源在工作过程中可能会受到温度、电源电压等因素的影响，因此需要采用一定的补偿措施来保证输出功率的精确性和稳定性。

其次是功率调节的效率问题。

射频功率放大器的效率直接影响到射频电源的工作效率和散热问题，因此需要在功率调节技术中考虑如何提高功率放大器的效率。

最后是功率调节的动态特性。

射频电源在不同的工作状态下，功率调节的要求也不同，因此需要在设计中考虑如何实现快速响应和稳定性的平衡。

为了提高射频电源的功率调节技术和优化，可以采用以下一些策略。

首先是采用先进的功率调节芯片和控制算法。

射频电路中pa电路1.引言1.1 概述射频电路中的功率放大器（PA）电路在无线通信系统中起着至关重要的作用。

射频电路是一种特殊的电路，用于处理无线通信中的高频信号。

PA电路作为射频电路中的关键组成部分，主要负责将输入信号的功率放大到足够的水平，以便保证信号能够被传输或发送给接收端。

在无线通信系统中，信号往往需要经过一定的传输距离，因此信号在传输过程中会衰减。

为了弥补信号衰减带来的损失，需要使用功率放大器来增加信号的功率。

PA电路的主要功能就是将输入信号的能量转化为输出信号的能量，并向输出负载传递足够的功率。

基于不同的应用需求和技术约束，PA电路有多种不同的设计方案。

根据功率放大器的工作方式，可以将其分为线性功率放大器和非线性功率放大器。

线性功率放大器在保持信号波形完整性和减小失真方面具有较好的性能，因此在无线通信系统中得到广泛应用。

而非线性功率放大器则在功率转换效率方面具有较高的优势，适用于一些功率要求较高的应用场景。

PA电路的设计和优化是射频电路设计的重要内容，涉及到多个参数的选择和调整。

通过选择合适的功率放大器类型、匹配网络和功率传输线等组成部分，并进行适当的调试和测试，可以实现对信号的高效放大和传输。

本文将详细介绍PA电路的基本原理和工作方式，以及其在无线通信系统中的重要性。

同时，还将探讨PA电路未来的发展方向和挑战。

最后，通过对PA电路的研究和应用，将为无线通信技术的发展做出积极的贡献。

1.2 文章结构文章结构部分的内容可以包括以下内容：文章结构是指文章的整体框架和组织方式，它将整个文章划分为不同的部分，使读者能够清晰地理解和掌握文章的内容。

本文将按照如下结构展开：第一部分为引言部分，主要介绍本文的主题和背景，包括射频电路中PA电路的基本概念和作用，以及文章的目的和意义。

通过引言部分，读者能够初步了解PA电路在射频电路中的重要性，并对本文的内容产生兴趣和需求。

第二部分为正文部分，主要分为两个小节。

基于功率合成器的北斗射频功率放大器设计作者：高贵虎苏凯雄来源：《贵州大学学报（自然科学版）》2019年第02期摘要：针对当前应用于北斗卫星系统的射频功率放大器的小功率、低效率、高成本等缺点，本文提出一种基于功分合路器的改进型三级级联射频功率放大器设计方案。

利用负载牵引法对末级功率放大器进行设计，利用集总参数与分布参数相结合的技巧对微带低通滤波器进行设计，利用小信号S参数法对前置级放大器进行设计。

通过详细的理论分析和仿真优化，结合射频硬件电路和结构的设计要求，实际制作并实现稳定高效的30 W射频功率放大器设计。

该方案可使低供电电压的小功率射频器件实现较大功率输出，并较好地兼顾线性度和效率。

关键词：中国北斗卫星导航系统;射频功率放大器;功分合路器;微带滤波器中圖分类号：TN722.7文献标识码： B随着中国北斗卫星导航系统的不断完善，北斗卫星导航系统正逐步从区域性卫星导航系统发展成为全球性卫星导航系统。

北斗系统所独具特色的短报文通信功能，使其在国防、民生等领域得到越来越广泛的作用[1-2]。

射频功率放大器作为北斗卫星导航与通信终端设备的末级信号放大器，其性能的好坏直接关乎发往卫星信号的质量和终端设备的电源效率。

然而，由于通常采用的大功率射频功率放大器存在线性度不理想、电源效率低、供电电压高、成本高、易受温度影响等问题[3-4]，制约了其在北斗通信终端中的应用。

目前，北斗卫星相关产业发展缓慢，大功率射频放大器方案主要采用进口芯片，通过高电压供电，成品移动性较差。

为解决上述问题，本文在传统三级级联射频功率放大器结构基础上，通过引入功率分配器和功率合成器，形成对称性电路的解决方案，从而在保证足够的线性输出功率的前提下，降低供电电压要求，并提高电路稳定性。

同时，通过结合微带低通滤波器设计，进一步减低系统的谐波干扰。

1 系统组成本文提出的射频功率放大器结构如图1所示，它主要由前置级放大器、功率分配器、驱动级放大器、末级功率放大器、功率合成器和低通滤波器等单元电路组成。

RF PA介绍LOREM IPSUM DOLOR LOREMCONTENTS 半导体功率器件放大器类型介绍RF PA调试QA RF PA应用RF PA特性参数PA：独立于主芯片的射频器件射频功率放大器（Power Amplifier, 简称 PA）是化合物半导体应用的主要器件，也是无线通信设备射频前端核心的组成部分。

射频前端（RF Front End）是用以实现射频信号发射与接收功能的芯片组，与基带芯片协同工作，共同实现无线通讯功能。

射频前端包括功率放大器（Power Amplifier）、开关（Switch）、滤波器（Filter）、双工器（Duplexer）、低噪声放大器（Low Noise Amplifier）等功能构件，其中核心器件是决定发射信号能力的射频功率放大器芯片。

PA 芯片的性能直接决定了手机等无线终端的通讯距离、信号质量和待机时间，是整个通讯系统芯片组中除基带主芯片之外最重要的组成部分。

根据晶体管的静态工作点的位置不同可分以下几类。

(1) A 类放大电路u CEi CQ Ai C1I CQ ωt2θ=2π 02ππ集电极电流波形静态工作点位置特点a.静态功耗大b.能量转换效率低c.高线性度功率放大器分类CQCEQ C I U P =u CEi CQ Aωti C2π 2 π2θ = π3 π静态工作点位置集电极电流波形特点a. 静态功耗CQ CEQ C ≈=I U P b. 能量转换效率高c. 输出失真大(2) B 类放大电路B类放大电路图示分析-U CC+U CCR 1R 2R Lu oVD 1VD 2u iV 1V 2u i wt+U CCu i+-V 1R Lu oV 2R Lu ou i-U CCu owt 0u owt0u owt 0改善B类放大器交越失真u CEi CQ Ai C3π2π3πI CQπ <2 < 2π静态工作点位置集电极电流波形特点a. 静态功耗较小b. 能量转换效率较高c. 输出失真比甲类大(3) AB 类放大电路功率放大器特性总结Linearity class MaximumefficiencyA50%GoodB78.5%ModerateAB50-78.5%betterC100%poor半导体功率器件晶体管工艺Class ProcessHigh power PA HBTLow/Mid power PA SiGeLNA+Switch HEMT/pHEMT/SOI/SiGeHigh power FEM HBT+HEMT/pHEMT,BiHEMT FEM(Low/Mid power)HBT/SiGeRF PA应用802.11 wifi802.15 Bluetooth/Zigbee GSM/CDMA/LTE-A通信类电子射频前端ISM Band Application射频前端架构图PA内部架构图PA与LNA区别●LNA：工作在小信号状态，提供放大的信号电流和电压，功率通常很小，NF低；●PA：工作在大信号状态，提供较大的功率输出，其晶体管有足够的电流驱动能力和较高的击穿电压；●PA：输出有很大的动态范围，其输出阻抗随电压和电流而改变，是非线性阻抗，因此阻抗匹配是难点；●LNA：电压增益；●PA：电压增益+功率增益。

RF Power Amplifier DesignMarkus Mayer & Holger ArthaberDepartment of Electrical Measurements and Circuit DesignVienna University of TechnologyJune 11, 2001Contents¤Basic Amplifier Conceptsl Class A, B, C, F,hHCAl Linearity Aspectsl Amplifier Example¤Enhanced Amplifier Conceptsl Feedback, Feedforward, ...l Predistortionl LINC, Doherty, EER, ...3Efficiency Definitions¤Drain Efficiency:¤Power Added Efficiency: DCOUT D P P =η−⋅=−=G P P P D DC IN OUT PA 11ηηIdeal FET Input and Output CharacteristicsDDKDD V V V −=κ0V GSI DS I m2V P V P V DSmaxV DDV K V DS0V =V GS PV =0GS Ohmic SaturationBreakdowng m5Maximum Output Power MatchmKDS OPT I V V R −=max 0V GSI DS I m2V P V P V DSmaxV DDV K V DS0V =V GS P V =0GS Ohmic SaturationBreakdowng mClass AV GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp Q7Class A –CircuitV DDR LD GS48%dB) 14 (e.g. 50%PA ⋅==⋅=κηκηA D G G Class BV GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp Q9Class CV GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp QClass B and C –Circuit%65dB) (8 6dB -%78⋅==⋅=κηκηA D G G %01%100→→→ηηG D V DDR LD GSf 0Class BClass C11Influence of Conduction AngleClass F (HCA ... harmonic controlled amplifier )V GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp Q13hHCA(half sinusoidally driven HCA)V GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp QClass F and hHCA –CircuitV DDR LV DSI DZ e (n)0, n=even inf, n=evenZ o (n)0, n=1inf, n=odd%87dB) (9 5dB -0%10⋅==⋅=κηκηA D G G Class FhHCA%96dB) (15 1dB 0%10⋅=+=⋅=κηκηA D G G15hHCA –Third Harmonic PeakingV GS I DS I m2V P V P V DSmaxV DD V K V DS 0V GSV DS2p pQI DS I m02pp QThird Harmonic Peaking –CircuitV DDR LD GSf 03f 0%87dB) (14.6 0.6dB 91%PA ⋅=+=⋅=κηκηA D G G17 Linearity AspectsLinearity Aspects¤Class A ¤Class B ¤Class AB ¤Class CLinearity Aspects¤Ideal strongly nonlinear model¤Strong-weak nonlinear model19Amplifier Design –An Example¤Balanced Amplifier ConfigurationPort 1Z=50 Ohm Port 2Z=50 Ohm21Amplifier Design –Simulation¤Gate & Drain Waveforms50010001300Time (ps)Drain waveforms-5510152025-1000010002000300040005000050010001300Time (ps)Gate waveforms-3-2-101-1000-50005001000Amplifier Design –Simulation¤Dynamic Load Line & Power Sweep3691215Voltage (V)Dynamic load line-200020004000600080000510152024Power (dBm)Power Sweep 1 Tone010203040102030405060708023Amplifier Design –Measurements¤Single Tone & Two Tone00000000 0000000000 Amplifier Nonlinearity¤Gain and Phase depends on Input Signal ¤3rd Order Gain-Nonlinearities:Amplifier Nonlinearity¤Higher Output Level (close to Saturation) results in more Distortion/Nonlinearity25Nonlinearity leads to?¤Generation of Harmonics¤Intermodulation Distortion / Spectral Regrowth¤SNR (NPR) Degradation¤Constellation Deformation27Intermodulation and HarmonicsSpectral Regrowth¤Energy in adjacent Channels¤ACPR (Adjacent Channel Leakage Power Ratio) increases-15-10-5051015-60-50-40-30-20-10010r e l a t i v e p o w e r / d Brelative frequency / MHzACPR 1>60dB ACPR 2>60dB ACPR 1=16dB ACPR 2=43dB29Reduced NPR (Noise Power Ratio)¤Input Signal¤Degradation of Inband SNR ¤…Noisy“ Constellation¤Output Signal of Nonlinear AmplifierConstellation Deformation¤Input Signal¤Output Signal of Nonlinear Amplifier(with Gain-and Phase-Distortion)31Modeling of Nonlinearities¤with Memory-Effectsl Volterra Series (=…Taylor Series with Memory“)¤without Memory-Effectsl Saleh Model l Taylor Seriesl Blum and Jeruchim Modell AM/AM-and AM/PM-conversion2221)(1)(r r r g r r r f a a ΘΘ+=+=βαβαb e t t e r p e r f o r m a n c eAM/AM-and AM/PM-Conversion¤GaAs-PAAM/AM-and AM/PM-Conversion¤LDMOS-PA33How to preserve Linearity?¤Backed-Off Operation of PAl Simplest Way to achieve Linearity¤Linearity improving Conceptsl Predistortionl Feedforwardl...How to preserve Efficiency?¤Efficiency improving Conceptsl Dohertyl Envelope Elimination and Restorationl...¤Linearity improving Conceptsl Higher Linearity at constant EfficiencyàHigher Efficiency at constant Linearity35 Direct (RF) Feedback¤Classical Method¤Decrease of Gain àLow Efficiency¤Feedback needs more Bandwidth than Signal¤Stability Problems at high BandwidthsDistortion Feedback¤Feedback of outband Products only¤Higher Gain than RF feedback¤Stability Problems due to Reverse Loop37 Feedforward¤Overcomes Stability Problem by forward-only Loops¤Critical to Gain/Phase-Imbalances0.5dB Gain Error à-31dB Cancellation2.5°Phase Error à-27dB Cancellation¤Well suited for narrowband application39-30-20-100102030-60-50-40-30-20-10010r e l a t i v e p o w e r / d Brelative frequency / MHzoriginal signal predistorted signalCartesian Feedback¤AM/AM-andAM/PM-correction¤High Feedback-Bandwidth ¤Stability ProblemsIQI QI Qmodulator demodulatorOPAsmain amp.local oscillatorRF-outputb a s e b a n d i n p u tUMTS example :Digital Predistortion¤Digital Implementation of …Cartesian Feedback“¤Additional ADCs, DSP Power,Oversampling needed ¤Loop can be opened àno Stability ProblemsAnalog Predistortion¤Predistorter has inverse Function of Amplifier¤Leads to infinite Bandwidth (!)¤Hard to realize (accuracy)41Analog Predistortion¤Possible Realizations:43LINC (Linear Amplification by Nonlinear Components)¤AM/AM-andAM/PM-correction¤Digital separation required (accuracy!)¤High Bandwidth,oversampling necessary ¤Stability guaranteedsignal separations(t)s (t)1KKs (t)2K(s (t)+1s (t))=Ks(t)2Ks (t)1Ks (t)2-30-20-100102030-60-50-40-30-20-10010r e l a t i v e p o w e r / d Brelative frequency / MHzACPR 1>60dB ACPR 2>60dB ACPR 1=18dB ACPR 2=29dBs(t) s 1(t)UMTS example :Doherty Amplifier¤Auxiliary amplifier supports main amplifier during saturation ¤PAE can be kept high over a 6dB range45Doherty Amplifier¤Gain vs. Input Power¤No improvement of AM/AM-and AM/PM-distortion¤Behavior of auxiliary amplifier very hard (impossible) to realize ¤Stability guaranteed¤Efficiency vs. Input Powermain amp. (A1)aux. amp. (A2)P P d oh e r t y c o nf ig u r a t i on(A 1+A 2)EER (Envelope Elimination and Restoration)¤Separating phase and magnitude information ¤Elimination of AM/AM-distortion¤Application of high-efficient amplifiers (independent of amplitude distortion)¤Stability guaranteedsignal separationamplitude informationphase informationRF inputRF outputhigh efficiency power amplifier47EER (Envelope Elimination and Restoration)¤Analog realizationl Limiter hard to build l Accuracy problems l Feedback necessary¤Digital realizationl Oversampling + high D/A-conversion rates required l High power consumption of DSP and D/A-converters l Possible feedback eliminationl Compensation of AM/PM-distortion possibleDADA DAamplitude informationphase informationmodulator RF outputhigh efficiency power amplifierdigital signal processorlocal oscillatorsupply voltage amplifierI QI Qd i g i t a l b a se b a n d i n p u tpeak detectorsupply voltage amplifier limiterhigh efficiency power amplifierRF outputpeak detectorRF inputEER (Envelope Elimination and Restoration)¤Bandwidth of Magnitude-and phase-signal have higher than transmit signal¤Five times (!)oversampling necessary to achieve standard requirements-30-20-100102030-60-50-40-30-20-10010r e l a t i v e p o w e r / d Brelative frequency / MHzMagnitude Phase-30-20-100102030-60-50-40-30-20-10010r e l a t i v e p o w e r / d B relative frequency / MHzACPR 1>60dB ACPR 2>60dB ACPR 1=33dB ACPR 2=40dB ACPR 1=51dB ACPR 2=36dB ACPR 1=53dB ACPR 2=49dBfull bandwidth 3⋅B 0 bandwidth 5⋅B 0 bandwidth 7⋅B 0 bandwidthUMTS example :UMTS example :49Adaptive Bias¤Varying/Switching of Bias-Voltage depending on Input Power Level¤Selection of Operating Point with high PAE ¤Applicably for nearly each type of AmplifierRF input peak detectorbias controlRF outputhigh efficiency power amplifier3233343536373839402030405060708090output power / dBmp o w e r a d d e d e f f i c i e n c y / %V D =3.5V V D =4.5V V D =6.5VAdaptive Bias¤Single tone PAE for switched V DD with V G kept constant¤Simply to implement Concept ¤Stability guaranteed ¤Possible problems:l DC-DC converter with high efficiency necessaryl Possible Linearity Change (can increase and decrease)especially for HCAs51Summary¤Digital Realization required to achieve Accuracy ¤Problem of Stability for high Bandwidth Application ¤Higher Bandwidths (Oversampling) necessary,depending on Order of IMD cancellation ¤Predistortion gives best Results while keepingEfficiency high (valid for high Output Levels > 40dBm)Figure References¤F. Zavosh et al,“Digital Predistortion Techniques for RF Power Amplifiers with CDMA Applications”,Microwave Journal, Oct. 1999¤Peter B. Kenington,“High-Linearity RF Amplifier Design”,Artech House, 2000¤Steve C. Cripps,“RF Power Amplifiers for Wireless Communications”,Artech House, 1999Contact InformationDI Markus Mayer(+43-1-58801-35425-markus.mayer@tuwien.ac.atDI Holger Arthaber(+43-1-58801-35420-holger.arthaber@tuwien.ac.at53。

LOW COST 1000 WATT, 300 VOLT RF POWERAMPLIFIER FOR 13.56 MHzPresented at RF EXPO EAST 1995A P P L I C A T I O N N O TELow Cost 1000 Watt, 300 Volt RF Power Amplifier for13.56MHzKenneth Dierberger Lee B. MaxApplications Engineering Manager Independent ConsultantAdvanced Power Technology Inc.6284 Squiredell Dr.405 SW Columbia St.San Jose, California 95129 USABend, Oregon 97702 USABobby McDonaldUNI-WEST ENGINEERING6329 Bethel Island Rd.Bethel Island, CA 94511 USAABSTRACTThis paper details the design, development , assembly and performance of a low cost, high-efficiency, 1000Watt, 13.56MHz RF power amplifier (PA) operated from a 300VDC supply, with an efficiency of 80%. The PA is built around a “symmetric Pair” of low cost RF power MOSFETs from Advanced Power Technology (APT). The transistors are from a new generation of high quality, commercial, HF/ VHF, silicon, 900V RF power MOSFETs in TO-247 packages. The paper addresses both the theoretical design and physical construction of the amplifier. The paper also contains a technical description of the RF power transistors.INTRODUCTIONMost transistorized RF Power Amplifiers operate from a DC to DC converter. This supply is usually low voltage, about 50V, and requires a down regulator when operated from AC mains. This converter is a significant portion of the overall cost of the RF amplifier system.As a result of IEC555-2, all electronic equipment sold in Europe with a power draw of greater than 250W will require power factor correction (PFC). The addition of a PFC preregulator to the system could add 50 to 100% to the cost of the power supply portion. The requirement for PFC is soon to follow in the USA and the rest of the world.The use of a new high voltage RF MOSFETs from Advanced Power Technology (APT) makes possible a new RF amplifier design which can be operated at 300V, allowing for the direct use of regulated output, thus eliminating the DC to DC converter, reducing the cost of the RF amplifier system.The new devices, like their predecessors, utilize the high performance of APT’s Power MOS IV® technology and the “symmetric pair”package.AMPLIFIER DESCRIPTIONThe amplifier is a 1000 Watt, 13.56MHz design operating in class C with a 300VDC power supply. Efficiency of the amplifier is 80 percent. The power amplifier is built around two “symmetric pair” of ARF444/ARF445 900V RF power MOSFETs provided in TO-247 plastic packages. The devices are electrically identical, except that they are packaged in “mirror image”pairs to facilitate a symmetrical layout that helps maintain the electrical symmetry required for push-pull operation. Figure 1 shows the circuit diagram of the amplifier, with the parts list given in Table 1. The amplifier is a classical push-pull configuration of a straight forward nature, using a simple L-C network for impedance matching and transformer-coupling to achieve the required complementary gate drive signals. A wideband wire wound transformer output circuit is used, with a conventional bifilar-wound RF choke for DC power supply isolation.Short, low inductance interconnections are easily made using the ARF444/ARF445 devices, because they can be mounted symmetrically in a common source configuration. In particular, the gate circuit should minimize inductance to avoid instability and losses when that inductance is combined with the high capacitance of the gates. Similarly, the frequency response of the output circuitry is improved with minimum stray inductance due to interconnections[1].The amplifier is operated directly from the PFC 300VDC power supply, eliminating the DC-DC converter, and is constructed on a heat sink sized for proper dissipation at the expected power levels. Figure 2 shows the component placement on the PC board and heat sink. The common source design of the package allows the device mounting to be accomplished without an insulator thus allowing good heat transfer to the heat sink with the use of thermal grease.INPUT NETWORKThe input network provides a 50Ω impedance to the driver source and transformation of the MOSFET gate impedance, as well as balanced drive for push-pull operation. The input network comprises capacitor C1, the input capacitance of the power MOSFETs and the series gate resistors, both transformed by T1. The proper selection of C1 tunes the input network for minimum input return loss at maximum power output [2].Transformer T1 provides a 9:1 impedance transformation of the MOSFET input impedance. It is constructed using two Fair-Rite cores #2643540002, µ=850 with 3 turns of strandedFigure 1. Circuit Diagram of the 1000 Watt Class C AmplifierPart Number DescriptionR1,R210Ω 1WR3-R18 4.7Ω 1WC1200pF Chip CapacitorsC2-C50.1µF Chip CapacitorsC6-C100.1µF Disk CeramicC11, C120.01 Disk CeramicQ1, Q3ARF444Q2, Q4ARF445L1, L2VK200-19/4BL3, L40.37µH: 6T, #18AWG, ID=0.438RFC12T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shieldbead, µi=850T19:1(Z) conventional transformer; 3:1(T), #18 stranded PTFE coatedwire on two Fair-Rite #2643540002, µi=850T21:1(Z) conventional transformer; 2:2(T), #14 stranded PTFE coatedwire on two stacks of three Fair-Rite #2643102002 shielded bead, µi-850 BFC16T, #18 Twisted pair stranded PTFE coated wire on three stackedIndiana General Toroid #F624-19-Q1, µi=125Table 1. Parts List for the 1000 Watt Power AmplifierPTFE coated #18 wire on the primary and 1 turn of stranded PTFE coated #18 wire on the secondary. The secondary is coupled through the DC blocking capacitors C1-C2 and C3-C4 and resistors R3 through R18 to the gates of the MOSFETs. The resistor-inductor combination R1-L1 and R2-L2 stabilize the push-pull amplifier at lower frequency and provide the MOSFETs with a DC ground reference to insure the gates do not float to a DC potential thus unbalancing the amplifier bias points. The parallel resistors R3-R6, R7-R10, R11-R14 and R15-R18 in series with the gates of the MOSFET, prevent high frequency oscillation common when paralleling MOSFETs [3].OUTPUT CIRCUITThe 300VDC power input is delivered through a balanced feed choke [4]. The choke is designedto create a zero DC magnetic bias in the core when both transistors draw the same average current.With the devices operating 180 degrees out of phase, the construction of the windings presents a high impedance at 13.56MHz to the drain of each MOSFET. The choke is constructed by winding 6 turns of #18 stranded PTFE coated twisted pair around three stacked Indiana General Toroids #F624-19-Q1, µi=125.The output of the power devices is coupled to the output transformer T2 through two 0.37 µH inductors. The transformer is a wideband 1:1conventional transformer. No output filtering was used in the test amplifier, which has the third harmonic 30db down and the second harmonic 55db below the 1000 watt output power level.The transformer is constructed by winding 2turns of #14 stranded PTFE coated wire for the primary and 2 turns of #14 stranded PTFE coated wire for the secondary around two stacks of three Fair-Rite #2643102002 shield beads, µi=850.PERFORMANCE MEASUREMENTS The amplifier was operated under two conditions. First the amplifier was driven with a 13.56MHz RF signal, modulated by a 1kHz square wave, at a 50% duty cycle, up to a peak power out of 1200W. Second the amplifier was driven with a 13.56HMz CW RF signal up to a continuous power out of 1000W. Due to the close correlation of the modulated data and the CW data, it was concluded that there is significant thermal margin from using four 300W devices at 1000W CW. Figures 3 through 6 show the performance data for this amplifier. Figure 3 is a plot of P in versus P out and Figure 4 shows gain versus P out . The curves show the classical class C characteristics,with a low gain at low power output, improving as the output power increases. The gain peaks at 16.9db when the amplifier output is 800W, with a roll-off to 15.9db at 1200W.Efficiency versus P out is shown in Figure 5. As would be expected in class C, the efficiency is over 50% at power output above 300W. The efficiency rises to an outstanding 80.4% at 1000W,continuing upward to 84.4% at 1000W, continuing upward to 84.4% at 1200W output. Figure 6 is total amplifier power dissipation versus P out .Figure 3. Input Power versus Output PowerFigure 4. Gain versus Output PowerFigure 6. Total Amplifier Power Dissipation versus Output Power 300 VOLT POWER SUPPLYThe topology chosen for the 300 V olt PFC power supply is the commonly used continuous mode boost converter. This topology is the most popular where power requirements are greater than 750W. Figure 7 is a simplified schematic of the regulator which is implemented using an APT5012JNU2 and a Unitrode U3854 controller IC [5] [6] [7].The regulator operates by the controller sensing the rectified DC input and controlling the ON and OFF time of Q1 such that the current in L1 closely follows a sine wave which is in phase with the AC line voltage. During the OFF time of Q1, the inductor fly back transfers some of the stored energy in the inductor to the output storage capacitor. The controller senses the output voltage and adjusts the average current in the inductor such that the regulated voltage on the output capacitor is maintained at 300V.CONCLUSIONThis paper demonstrated a recent breakthrough in commercial solid state RF power device and circuit technology. The high quality, low cost, components and circuits described here, now make it possible to deliver solid state, 10,000 watt (or more), 13.56MHz power supplies costing less than an equivalent tube RF power supply.The combination of high voltage operation, high gain, and efficiency of 80 percent make this technology exciting just for performance alone. Combine that performance with component coststhat allow for multi-kilowatt, 13.56MHz amplifiers to be built at less than $0.25 per watt and you now have the first real breakthrough in commercial HF, RF power technology in over a decade.This is only the beginning. The commercial technology detailed in this paper will be evolving quickly into solid state devices and circuits for higher frequency, higher power, and even higher operating voltages.Figure 7. Simplified Circuit Diagram of the Power Factor Correction Power SupplyREFERENCES1.H.O. Granberg, "Good RF Construction Practices and Techniques," Motorola Application Note AR164, Motorola RF Device Data, V olume II, DL110 Rev 4.2.H.O. Granberg, "Broad Band Transformers and Power Combining Techniques for RF," Motorola Application Note AN749, Motorola RF Device Data, V olume II, DL110 Rev 4.3.Rudy Severns, et al, "Parallel Operation of Power MOSFETs" "Anomalous Oscillation and Turn-Off Behavior in a Vertical Power MOSFET," MOSPOWER Applications Handbook, Siliconix, Inc., 19844.William E. Sabin, Edgar O. Schoenike, et al, "Single Sideband Systems and Circuits," McGraw-Hill 19875.Phil Todd, "UC3854 Controlled Power Factor Correction Circuit Design", Unitrode Application Note U-134, Product and Applications Handbook 1993-946.Ken Dierberger, Denis Grafham, "Design ofa 3000 Watt Single MOSFET Power Factor Correction Circuit," APT Application Note APT9303.7.Ken Dierberger, Denis Grafham, "Customized ISOTOP® Module for High Power Boost Converters and Related Topologies," APT Application Note 9401.ISOTOP® is a registered trademark of SGS Thompson405 S.W. Columbia Street Bend, Oregon 97702 USA Phone: (503) 382-8028 Fax: (503) 388-0364Parc Cadera Nord - Av. Kennedy BAT B433700 Merignac, FrancePhone: 33-56 34 34 71Fax: 33-56 47 97 61Printed - August 1995。

L波段高效率射频功率放大器的设计与仿真作者：杨小川来源：《数字技术与应用》2014年第11期摘要：射频功率放大器是无线通信系统中的重要组成部分，其工作效率直接影响着整个系统的耗能、稳定度和对电源散热装置的要求，提高射频功率放大器的效率，能够节约能源，降低功耗，因此实现射频功率放大器的高效率工作是目前射频功率放大器领域的热点问题之一。

本文选用Freescale晶体管MW6S004N，借助ADS2013软件，采用负载牵引技术和源牵引技术得到最佳负载阻抗和最佳源阻抗，并用Smith圆图进行电路的匹配设计，对射频功率放大器进行了仿真和优化。

仿真结果表明，在频率为1960MHz的L波段，输入功率为21dBm时，射频功率放大器的输出功率大于36dBm，功率附加效率大于50%。

这种高效率射频功率放大器适用于WCDMA基站，对基站中高效率功率放大器的设计有着重要的参考价值。

关键词：射频功率放大器 L波段高效率 ADS2013中图分类号：TN432 文献标识码：A 文章编号：1007-9416（2014）11-0176-06Abstract：RF power amplifier is an important component of wireless communication system，Its efficiency directly affects energy consumption ， stability of the whole system and the requirements for power cooling unit.Improve the efficiency of RF power amplifiers can save energy，reduce power consumption， so high efficiency RF power amplifier is the mainstream. In this paper， we select the transistors MW6S004N of Freescale， through ADS2013 software， using load-pull technology and source-pull technique to get optimum load impedance and optimum source impedance， and use the Smith chart to match the circuit design， Finally， simulation and optimization the RF power amplifier. Simulation results show that at the frequency of 1960MHz in the L-band， the input power is 21dBm， the RF amplifier output power greater than 36dBm， the power added efficiency greater than 50% .get a high efficiency RF power amplifier that used for the base station of WCDMA. Therefore， this method has important reference value to design high efficiency power amplifier that used for base station.Key Words：RF power amplifier； L-band； High efficiency；ADS20131 引言射频功率放大器作为发射机最重要的部分之一，它的性能与整个通信系统的性能息息相关，射频功率放大器位于发射机的末端，在整个系统中耗能最多，产热最高，若它的效率过低，不仅很大程度上浪费能量，而且散热问题也将会导致系统的使用寿命缩短[1]。