TABLE OF CONTENTS I. ABSTRACT..............................................................
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<Appendix>GP2AP054A00FTable of contents1. Abstract1.1. Features.........................................................................Attachment-31.2. I2C bus interface..................................................................Attachment-41.2.1. Write Format.............................................................Attachment-41.2.2. Read Format.............................................................Attachment-41.2.3. Others and Notes.........................................................Attachment-42. Recommended operating mode/Procedure of register setting2.1. GS mode........................................................................Attachment-52.2. PS mode........................................................................Attachment-62.3. ALS mode.......................................................................Attachment-72.4. GS and ALS alternating mode.......................................................Attachment-82.5. PS and ALS alternating mode.......................................................Attachment-92.6. Shutdown mode..................................................................Attachment-93. INT terminal output mode3.1. Detection result output mode for PS.................................................Attachment-103.2. Interrupt output mode.............................................................Attachment-114. Register Mapping4.1. Register Mapping................................................................Attachment-124.2. Precautions for Register setting.....................................................Attachment-134.3. Register Functions...............................................................Attachment-135. Register settings for Basic operation5.1. Operating mode selection :OP[3],OP[1:0]................Attachment-145.2. Proximity detection/non-detection sensing result :PROX......................Attachment-145.3. Interrupt result:FLAG_P,FLAG_A,FLAG_G....Attachment-145.4. INT terminal setting :PIN[2:0]....................Attachment-145.5. Interrupt type setting :INTTYPE[2:0]...............Attachment-145.6. Software reset :RST........................Attachment-145.7. Device ID:ID[7:0]......................Attachment-146. Register settings for ALS6.1. Resolution/Measuring duration setting for ALS mode :RES_A[1:0]..................Attachment-156.2. Maximum measurable range for ALS mode :RANGE_A[3:0]..............Attachment-156.3. ALS Detection result :D5[15:0],D6[15:0]............Attachment-157. Register settings for GS and PS7.1. Number of measurement cycles setting :PRST[2:0]...................Attachment-167.2. Resolution/Measuring duration setting for PS mode :RES_P[1:0]..................Attachment-167.3. Maximum measurable range :RANGE_P[2:0]...............Attachment-167.4. LED drive peak current setting :IS[2:0]......................Attachment-177.5. LED pulse setting :SUM[2:0]...................Attachment-177.6. Gesture and Proximity low threshold (Loff) :PL[15:0]....................Attachment-177.7. Gesture and Proximity high threshold (Lon) :PH[15:0]....................Attachment-177.8. Gesture offset (Offset) :OS_Dx[13:0].................Attachment-177.9. GS/PS Detection result :D0-3[13:0],D4[15:0]...........Attachment-187.10. Saturation Detection result of the integrator :SATx.......................Attachment-187.11. PANEL count subtraction :PANEL[5:0].................Attachment-187.12. Intermittent operating function :INTV AL_P[2:0]..............Attachment-198. Average consumption current8.1. Average consumption current with Vcc terminal........................................Attachment-208.2. Average consumption current with VLED terminal......................................Attachment-209. Example of setting sequence9.1. From Power-On to operating mode..................................................Attachment-219.2. From operating mode to Power-Off..................................................Attachment-219.3. Power-On and Power-Off..........................................................Attachment-2110. Device driver10.1. Device driver..................................................................Attachment-2211. Recommended Window Size (Reference)11.1. Without light shield.............................................................Attachment-2212. Data (Reference)12.1. LED drive peak current..........................................................Attachment-2312.1.1. LED drive peak current vs. VLED (Vcc=VLED).................................Attachment-2312.1.2. LED drive peak current vs. Vcc (VLED=3V)....................................Attachment-2312.2. Spectral Responsivity............................................................Attachment-2412.3. Proximity sensor (PS) mode.......................................................Attachment-2412.4. Angular dependence.............................................................Attachment-251. AbstractGP2AP054A00F is ambient light sensor and gesture sensor/proximity sensor with function ambient lightsensing and gesture sensing/proximity sensing by setting register.Proximity sensor (PS) mode: Judgment result of object existence can be referred by reading register value(14bit) via I2C bus interface. INT terminal can be changed either interrupt output or sensing result output(detection/non-detection status) by setting register in PS mode.Ambient light sensor (ALS) mode: Detection result of ambient light can be referred by reading register value (16bit) via I2C bus interface. INT terminal can be changed interrupt output by setting register in PS mode.This product is possible to operate both PS and ALS modes alternately.1.1. Features● DesignThis product is composed of following two chips in one package, which is IC with a built-inphotodiode (PD) (Clear (visible and infrared) photodiode and Infrared photodiode) for ambient lightsensors and gesture sensors/proximity sensors, and infrared LED.Achieving Small all-in-one package by Doubly-integrally-molded, transparent resin and light shield resin.Spectral sensitivity (ALS) of the human eye without infrared light effects can be obtain by deductingInfrared Photodiode from Clear photodiode.● I2C bus interfaceThis product has 7bit slave address adherence to I2C bus interface and can change register value foreach function via I2C bus.● INT terminal settingINT terminal can be changed either interrupt output or sensing result output (detection/non-detection status) by setting register in PS mode. ALS mode has only interrupt output setting.● Power save modeSoftware-shutdown/Hardware-shutdown1.2. I 2C bus interfaceThis product has 7bit slave address adherence to I 2C bus interface and can change register value for each function via I 2C bus. Besides, illuminance detection result and judgment result for detection/non-detection status can be read via I 2C bus.2Basic data format are as follows.Fig.2 I 2C Basic data formatDATA : Data which write into internal register/read from internal register.SLA VE ADDRESS :21.2.1. Write FormatWrite value in register and enable to write the next address sequentially after writing data. Data writing will be end with inputting stop-condition.WordAddress : 01H PROX, FLAG_P,FLAG_A and FLAG_G register in 01H are read only. WordAddress : 14H ~ 39H D0 ~ D6 registers from 14H to 39H are read only.Fig.3 I 2C write format1.2.2. Read FormatEnable to read data in register. Following address can be read sequentially by inputting ACK after reading data. Reading data will be stopped by inputting NACK.Stop-condition after setting Word address can be deleted since it corresponds to repeat-start-condition. Reading read data is done by not opening I 2C bus interface.Fig.4 I 2C read format1.2.3. Others and NotesThis product doesn’t support Clock -stretch function and General-call-address function.S T A RM S BLSBR /W A C KA C K M S BL S BACKS T O PSLAVE ADDRESSDATA DATAA: ACK,NA: NACK, S: START, P: STOP, X: don't care A: ACK, NA: NACK, S: START, P: STOP, X: don't care2. Recommended operating mode/Procedure of register settingWhen the GS mode, PS mode and ALS mode switch, please shut down and switched again. Array Fig.5 Recommended operating mode2.1. Gesture sensor (GS) modeThe device can detect proximity objects by which integrates incident light in IR (infrared) photodiode during the time without emission of LED (LED off) and the time with emission of LED (LED on)in order to eliminate the influence of ambient light.Below is an example of GS mode (Average consumption current is typical 2.1mA.),through I2Cbus interface. The device outputs raw data of the four IR photodiodes sensitive to onlyinfrared spectrum gesture sensing. It is necessary for device host (user side) to get detection resultswith calculation of gesture values for each channel data at D0[13:0],D1[13:0],D2[13:0],D3[13:0]and total value of each channel data at D4[15:0].2.2. Proximity sensor (PS) modeThe device can detect proximity objects by which integrates incident light in IR (infrared) photodiode during the time without emission of LED (LED off) and the time with emission of LED (LED on) in order to eliminate the influence of ambient light.Below is an example of PS mode (Average consumption current is typical 0.8mA.)The device outputs interrupt signal or detection/non-detection status on INT terminal in which case D4[15:0] exceed/fall below judgment threshold level(PH[15:0]/PL[15:0]) set before sensing operation.2.3. Ambient light sensor (ALS) modeThere are 2 photodiodes, CLEAR (sensitive to visible and infrared spectrum) and IR photodiodes (sensitive to only infrared spectrum) in this sensor. Illuminance value can be obtained by calculation from CLEAR and IR data.Below is an example of ALS mode. (Average consumption current is typical 0.1mA.)Low_lux_mode:×1,High_lux_mode:×512Ambient light sensing results can be read at D5[15:0] and D6[15:0] register through I 2C bus interface.The device continues to execute integration operation until set measuring time (30msec, recommended) passes. The device outputs raw data of CLEAR photodiode sensitive to both visible and infrared spectrum and IR photodiode sensitive to only infrared spectrum during ambient light sensing. It is necessary for device host (user side) to get illuminance value with calculation of both CLEAR data at D5[15:0] and IR data at D6[15:0].The results of without infrared light can be obtained by some calculation using D5[15:0] and D6[15:0].The results of without infrared light = α*D5[15:0] – β*D6[15:0]α and β factor are decided by ratio of D6 [15:0]/D5 [15:0].These factors might be necessary to be adjusted according to the case panel in use.Below is an example of GS and ALS alternating mode (Average consumption current is typical 2.2mA.)Low_lux_mode:×1,High_lux_mode:×512In GS/PS and ALS alternating mode, the way of detection is as follows;[1]In LED on/off period, this device store a signal charge which is subtracted LEDoff period charge fromLEDon period charge automatically. (Recommend setting for SUM[2:0] is 16times of LED pulses.)[2]In Count period, this device convert from a signal charge to digital value.(Recommend setting for RES_P[1:0] is 12bit resolution.)[3]Then, obtain detection result by subtracting the influence of ambient light. By using this value, proximitysensing judgment is done if reflective object is there or not.[4] The device integrates incident light in CLEAR photodiode and IR photodiode during a set period(recommended value:7.7msec), and then outputs the detection results to D5[15:0] and D6[15:0] respectively.Below is an example of PS mode and ALS alternating mode (Average consumption current is typical 0.9mA.)Low_lux_mode:×1,High_lux_mode:×5122.6. Shutdown modeControl power supply to the circuit. LED drive circuit is always off in shutdown mode.After power on, start with shutdown.Below is an example of shutdown mode. (Average consumption current is typical 0.004mA.)If you shut down, the INT terminal states are maintained. If the INT terminal is L level,due to the increased power consumption, it is recommended that you clear the interrupt.3. INT terminal output mode3.1. Proximity detection/non-detection sensing result output modeINT terminal operates with sensing result output mode by setting PIN[2:0] register (Address 02H)000:detection/non-detection sensing result output mode. Sensing result whether or not object is detected is able to be read out via I2C bus interface and output from INT terminal with negative logic.Fig.9 Detection result output mode3.2. Interrupt output modeOperates as interrupt output mode by setting PIN[2:0] register (Address 02H) 001,010,100: interrupt output mode.There are two kinds of output mode (level interrupt & pulse interrupt) by setting INTTYPE[2:0] register(Address 02H) 000 or 111. Below is a description of the level interrupt type.000: level interrupt typeIn this case, transition from H to L in INT terminal become occurring interrupt signal and INT terminal will hold L level until interrupt is cleared.111: pulse interrupt typeIn this case, L pulse output in INT terminal become occurring interrupt signal and INT terminal will not hold L level. Therefore we need not to clear interrupt flag (FLAG_P, FLAG_A). FLAG_P and FLAG_A are cleared automatically in 1 clock (about 0.47us).The result of interrupt judgment is written into FLAG_x register (Address 01H), and is read out from I 2C bus interface. (0: Non-interrupt, 1: interrupt)In this case, transition from H to L in INT terminal become occurring interrupt signal and INT terminal will be hold L level until interrupt is cleared. Interrupt will be cleared in writing 0 data in FLAG_x register. Detecting operation will continue while INT terminal is L level. Update ALS detection result D5[15:0], D6[15:0] and sensing result of object detection/non-detection status. Therefore, host needs to read data after FLAG_A and FLAG_P register clear.4. Register Mapping4.1. Register MappingWhen Vcc power is supplied, GP2AP054A00F starts up with initializing all registers.Table 12. Register Mapping4.2. Precautions for Register setting - Please start setting registers after power-supply voltage becomes stable up to 90% or more set value.Please wait for some 1msec before setting registers from power-on.- PROX, FLAG_P,FLAG_A and FLAG_G registers are able to be cleared by writing 0 data in each register. (but these registers can’t be written 1 data.)- Please don’t set the address 42H and the larger ones. (T est registers are assigned in those addresses)4.3. Register Functions Functions and set contents of the registers are shown below.5. Register settings for Basic operation5.1. Operating mode selection: OP [3],OP [1:0] (ADDRESS:00H)Select Software shutdown or ALS or GS (PS) or alternating mode (GS(PS) + ALS). OP[3],OP[1:0] register (Address 00H)0x00: Software shutdownControl power supply to the circuit. LED drive circuit is always off in shutdown mode. After power on, start with shutdown1x00: GS (PS) and ALS alternating 1x01: ALS modeDetection result of clear photodiode is output to D5[15:0] register (Address 36H, 37H). Detection result of infrared photodiode is output to D6[15:0] register (Address 38H, 39H).1x10: GS (PS) mode Sensing result of detection/non-detection is output to PROX register (Address 01H).Detection result of distance is output to D4[15:0] register (Address 34H, 35H).5.2. Proximity detection/non-detection: PROX (ADDRESS 01H) Sensing result for detection/non-detection is output. There is a function which clears data by writing 0in PROX register.PROX register (Address 01H): 0: non-detection, 1: detection5.3. Interrupt result: FLAG_P,FLAG_A,FLAG_G (ADDRESS 01H)FLAG_P register is output interrupt result for PS mode. FLAG_A register is output interrupt result for ALS mode. FLAG_G register is output interrupt result for GS mode.There is a function which clears by writing 0 in FLAG register.FLAG register (Address 01H) : 0: non-interrupt, 1: interrupt5.4. INT terminal setting: PIN[2:0] (ADDRESS 02H)Select output mode in INT terminal by setting PIN register (Address 02H). The outputs by PROX, FLAG_P, FLAG_A and FLAG_G can be selected.5.5. Interrupt type setting (for PS,ALS,GS): INTTYPE[2:0] (ADDRESS:02H)Select level interrupt type or pulse interrupt type by setting INTTYPE register (Address 02H).5.6. Software reset: RST (ADDRESS 02H)Initialize all registers by writing 1 in RST register. RST register is also initialized automatically and becomes 0.5.7. Device ID: ID[7:0] (ADDRESS 3EH)Device Identification Register is 0110_0000 (60h).6. Register settings for ALS6.1. Resolution/Measuring duration setting for ALS mode: RES_A [1:0] (ADDRESS 03H)Select measuring resolution and measuring duration for ALS mode by setting RES_A [1:0]register (Address 03H).If resolution is low, measuring tolerance becomes large. Please have an adjustment at your system.6.2. Maximum measurable range for ALS mode: RANGE_A[3:0] (ADDRESS 03H)Select maximum measurable range for ALS mode by setting RANGE_A [3:0] register (Address 03H).Detect with a set range in ALS mode. Maximum count value is outputted in case of incident lightexceeding maximum measurable range.It is possible to have countermeasure for external light by setting a large count value at maximummeasurable range.It is necessary to set them considering the condition in the actual use and evaluating at your system.6.3. ALS Detection result: D5[15:0], D6[15:0] (ADDRESS 36H,37H,38H,39H)Detection result of clear photodiode is output to D5[15:0] register (Address 36H, 37H).Detection result of infrared photodiode is output to D6[15:0] register (Address 38H, 39H).The results of without infrared light can be obtained by some calculation using D5[15:0] and D6[15:0].The results of witho ut infrared light = α*D5[15:0] –β*D6[15:0]α and β factor are decided by ratio of D6 [15:0]/D5 [15:0].These factors might be necessary to be adjusted according to the case panel in use.7. Register settings for GS and PS7.1. Number of measurement cycles setting: PRST[2:0] (ADDRESS 05H)Select number of measurement cycles by setting PRST[2:0] register. Judgment result fordetection/non-detection is over threshold continuously more than the set cycles in PRST[2:0] register. This judgment result is done in using the detection result of distance (D4[15:0]).・Algorithm for detecting object in PS is as follows.<Judge the change from non-detecting status to detecting status>Detection result is over high threshold (Lon) N times continuously : Detection Other : Non-detection<Judge the change from detecting status to non-detecting status>Detection result is over low threshold (Loff) N times continuously : Non-Detection Other : Detection7.2. Resolution/Measuring duration setting: RES_P [1:0] (ADDRESS 05H)Select measuring resolution and measuring duration by setting RES_P[1:0] register (Address 05H). If resolution is low, measuring tolerance becomes large. Please have an adjustment at your system.7. 3. Maximum measurable range: RANGE_P[2:0] (ADDRESS 05H)Select maximum measurable range by setting RANGE [2:0] register (Address 05H).Detect with a set range. Maximum count value is outputted in case of incident light exceeding maximum measurable range.Adjusting detecting distance by proximity low threshold PL[15:0] and PH[15:0]. It is necessary to set them considering the condition in the actual use and evaluating at your system.Table 20. Maximum measurable range7.4. LED drive peak current setting IS[2:0] (ADDRESS 06H)Enable to select LED drive peak current by setting IS[2:0] register (Address 06H).In case of changing this setting, the count will change correspond to the set LED drive peak current.Please adjust detecting distance with proximity low threshold PL[15:0] and proximity high thresholdPH[15:0].LED drive peak current will depend on Vcc and VLED voltage.(Refer to 12.1. LED drive peak current data)7.5. LED pulse setting: SUM[2:0] (ADDRESS 06H)Select LED pulse setting by setting SUM[2:0] register (Address 06H).If LED pulse setting is low, measuring tolerance becomes large. Please have an adjustment at your system.Number of LED pulses can be changed from 4times to 32times.Table 22. LED pulse setting7.6. Gesture and Proximity low threshold (Loff): PL[15:0] (ADDRESS 08H、09H)Sets proximity low threshold in PL[15:0] register at PS mode.Please set it with confirming at optical mounting condition in the actual use.7.7. Gesture and Proximity high threshold (Lon): PH[15:0] (ADDRESS 0AH、0BH)Sets proximity high threshold in PH[15:0] register at PS mode.Please set it with confirming at optical mounting condition in the actual use.7.8. Gesture offset (Offset): OS_D0[13:0],OS_D1[13:0],OS_D2[13:0],OS_D3[13:0] (ADDRESS 0CH~13H)Sets gesture offset in OS[13:0] register at GS mode.If there is Panel crosstalk, you will be able to subtract the Panel crosstalk count by using gesture offset.Please set it with confirming at optical mounting condition in the actual use.7.9. GS Detection result: D0[13:0],D1[13:0],D2[13:0],D3[13:0] (ADDRESS 2CH~33H)Detection result of gesture sensing is output to D0[13:0],D1[13:0],D2[13:0] and D3[13:0]register (Address 2CH~33H).Detection result is defined as follows,Detection result(D0[13:0]) = Raw count(D0[13:0], include panel crosstalk) – Offset(OS_D0[13:0])Detection result(D1[13:0]) = Raw count(D1[13:0], include panel crosstalk) – Offset(OS_D1[13:0])Detection result(D2[13:0]) = Raw count(D2[13:0], include panel crosstalk) – Offset(OS_D2[13:0])Detection result(D3[13:0]) = Raw count(D3[13:0], include panel crosstalk) – Offset(OS_D3[13:0]) Gesture detection:If the detected object on the right, D0[13:0]+D3[13:0] > D1[13:0]+D2[13:0].If the detected object on the left, D0[13:0] +D3[13:0] < D1[13:0]+D2[13:0].If the detected object on the top, D0[13:0]+D1[13:0] > D2[13:0]+D3[13:0].Photodiode0(PD0) count value is stored to the raw count of D0[13:0].Photodiode1(PD1) count value is stored to the raw count of D1[13:0].Photodiode2(PD2) count value is stored to the raw count of D2[13:0].Photodiode3(PD3) count value is stored to the raw count of D3[13:0].7.10. Saturation Detection result of the integrator: SAT0, SAT1, SAT2, SAT3 (ADDRESS 01H)Saturation detection result of the integrator is output to SAT0, SAT1, SAT2, SAT3 register (Address 01H).If the integrator(PD0) is saturated, SAT0 register is set to 1.If the integrator(PD1) is saturated, SAT1 register is set to 1.If the integrator(PD2) is saturated, SAT2 register is set to 1.If the integrator(PD3) is saturated, SAT3 register is set to 1.7.11. PANEL count Subtraction: PANEL[5:0] (ADDRESS 41H)Sets PANEL count Subtraction in PANEL[5:0] register at GS mode.If there is Panel crosstalk, you will be able to subtract the Panel crosstalk count by using PANELcount Subtraction.Detection result D0[13:0] and D3[13:0] is subtracted by PANEL[5:3] register.Detection result D1[13:0] and D2[13:0] is subtracted by PANEL[2:0] register.Please set it with confirming at optical mounting condition in the actual use.INTVAL_P[2:0]=010 :7.7msec settingGSIntermittent(quiescent or ALS)GSIntermittent(quiescent or ALS)7.7msec7.12. Intermittent operating function: INTVAL_P[2:0] (ADDRESS 07H)This function is to reduce average consumption current by stopping part of circuit intermittently,and this is different from software shutdown function. Intermittent operating duration can be changedby setting INTV AL_P[2:0] register.Setting a longer intermittent operating duration makes LED average consumption current lower.However, update period of the detection result becomes long. It will make response time of detecting longer.Enable to change intermittent operating periods by setting INTV AL_P [2:0] register.For GS mode, quiescent operation will be after GS operation.For GS and ALS alternating mode, ALS operation will be after GS operation.Although setting a longer intermittent operating period contributes to reduce average consumption current, it makes update period and response time for detection longer as a result. Need to set it considering your actual conditions in use.Fig.13Intermittent operating8. Average consumption currentAverage consumption current in operation is the sum of the average current consumption value with Vcc terminal and LED consumption. The LED driven current flows from LEDA terminal to GND terminal.8.1. Average consumption current with Vcc terminalAverage consumption current at GS mode is typical 0.32mA.Average consumption current at ALS mode is typical 0.1mA.Average consumption current at Shutdown mode is typical 0.004mA.8.2. Average consumption current with VLED terminalIn case of continuous operation, average consumption current in LED is estimated as below.[LED average consumption current]= LED drive peak current × (LED pulse setting × 7.5usec) / (measuring time + Intermittence time)[LED drive peak current]: IS[2:0] register.011 : 19mA, 100 : 38mA, 101 : 75mA, 110 : 150mA[LED pulse setting]: SUM[2:0] register.000 : x4, 001 : x8, 010 : x12, 011 : x16, 100 : x20, 101 : x24, 110 : x28, 111 : x32[measuring time] : Enable to set with RES_P[1:0] register.00 : 7.7msec(14bit), 01 : 1.9msec(12bit), 10 : 0.48msec(10bit), 11 : 0.12msec(8bit)[Intermittence operating time] : Enable to set with INTVAL_P[2:0] register.000 : 0msec, 001 : 1.9msec, 010 : 7.7msec, 011 : 30msec100 : 61msec, 101 : 123msec, 110 : 246msec, 111 : 492msecFor example,[LED drive peak current] : 150mA IS[2:0]=110[LED pulse setting] : x16 SUM[2:0]=011[measuring time] : 1.9msec(12bit) RES_P[1:0]=01[Intermittence operating time] : 7.7msec INTV AL_P[2:0]=010In the above case,[LED averaging consumption current] =150mA×16×7.5usec/(1.9msec+7.7msec)=1.87mAAlso, using auto-shut down function, it will be automatically shutdown after one operation.Utilizing it with adjusting your system, it contributes to reduce averaging consumption current in LED.9. Example of setting sequence9.1. From Power-On to operating conditionThe internal register of GP2AP054A00F are all initialized after powering on. (Power-On-Reset)9.2. From operating condition to Power-OffInsert a wait for at least 1ms until shutdown state stabilizes.The following figure shows configuration sequence at Power-On and Power-OffFig.16 Power-On and Power-OffVcc10. Device Driver10.1. Device DriverWe can provide a device driver for this product.If you need support for the software, please contact me feel free.11. Recommended Window Size (Reference)11.1. Without light shieldGP2AP054A00Fh = 0.95 mmCg = (h+g) × tan30° R = (h+g) × tan30°g ≦0.4mm (recommended) g : distance between sensor and panel t ≦0.7mm (recommended) t : thickness of panelFig.17 Recommended window size (Without light shield)1. Please print or tape up not to transmit infrared.2. Please execute the Light Shielding between windows.3. Even recommended window size may cause malfunction depending on the reflection from the panel. In this case, it is effective to be extended the printing area between windows, but affects detection distance and ALS output.4. Please confirm that there is no problem with an actual machine in consideration of the implementation gap, the misalignment of the windows and voltage variation.5. The recommended transmissivity (400nm ≦λ≦1100nm) of the window is more than 85%.90.95 tLight Shielding area WindowR2.651.2751.37530° 30°Light Shielding areaIR EmitterDetector。
MBA in FINANCE & BANKING Array(STRATEGIC MANAGEMENT)Department : CENTRE FOR POST GRADUATE STUDIESStudent’s Name : Zhang BinStudent’s ID : 108070211Unit Controller / Examiner : Dr. Batumalay KaliannanE-mail : Batumalay Kaliannan@.mySubmission Date : July, 2011TABLE OF CONTENTS ABSTRACT (00)1.INTRODUCTION (01)2.LITERATURE REVIEW (02)3.THE THEORY INTRODUCED (03)(1) Enterprises’ KPI system (Key Performance Indicator) (04)(2) Enterprises’ KPI system - the organizational model (04)(3) Enterprises’ organizational model - enterprise qualifications system (04)(4) Through the upgrading of qualifications obtain the core capabilitiesimprovement, thus to achieve high performance (05)4.THE MECHANISM ANALYSIS ABOUT STRATEGIC HUMAN RESOURCEMANAGEMENT IMPACT ON EFFECT OF ORGANIZATIONALPERFORMANCE (05)(A)Strategic human resources policy for staff team characteristics has animportant influence effect, the specific influence as follows: (06)4. (A).1. Selection policy and staff team characteristics (06)4. (A).2. Employment policy and staff team characteristics (07)4. (A).3. Excitation policy and staff team characteristics (08)4. (A).4. Training policies and staff team characteristics (08)4. (A).5. Keeping policy and staff team characteristics (08)(B)Employees’ characteristics directly related to this the high-low level oforganizational performance (09)4. (B).1. Staff team characteristics and labour costs (09)4. (B).2. Staff team characteristics and process optimization..104. (B).3. Staff team characteristics and market orientation (11)4. (B).4. Staff team characteristics and organizational learningand creativity (12)5.CONCLUSIONS (13)6.REFERENCES (13)LIST OF FIGURE/TABLESF i g u r e1.Illustrate the strategic human resource management (SHRM) impact on organizational performance (03)ABSTRACTAn abstract of research project paper submitted to faculty of Business and Globalization, Limkokwing University of Creative Technology in partial fulfilment of the Requirement for the Degree of Masters in BusinessAdministration (Finance & Banking)Discussing Strategic Human Resource Management on the Impact of the Organizational PerformanceBy:Zhang Bin------------------------------JULY, 2011Purpose – Strategic human resource management (SHRM) implement is used by large foreign multinational companies to improve their performance. The purpose of this paper is to discuss the direct or indirect relationship between SHRM implement and firm performance.Design/methodology/approach – SHRM implement is conceptualized as independent variables measured through the five areas of the selection policy, employment policy, and excitation policy, training policy and keeping anizational performance as a dependent variable is measured using the four main factors which affect the organizational performance: labour costs, process optimization, market orientation and organizational innovation and learning ability.Findings – Results of this paper show that the SHRM implement that best improve firm performance generate a relationship between the staff team characteristics and four main factors which affects organizational performance indicators. The relationship between the useof SHRM implement and firm performance does not direct come into existence. This paper proves that the relationship between SHRM implement and firm performance is through effect mechanism process that is the staff team characteristics which affect the organization.Research limitations/implications – this is the first paper of the influence of SHRM implement on firm performance, using information only from large foreign manufacturing companies operating in China. And it would be interesting to test this theory for more industries and countries.Practical implications – Results of this paper show that the SHRM implement that best improve firm performance is a relationship between the staff team characteristics which affect the organization and four main factors which affects organizational performance indicators.Keyword: Strategic human resource management, Organizational performance, Multinational companies, Working practices。
Table of Contents(加粗,小二号,居中)
(中间空一行,使用段落中的空行标准)
Acknowledgements(加粗,四号) (i)
(此处空一行,使用段落中的空行标准)
Abstract (加粗,四号) (ii)
摘要(宋体,四号、加粗) (iii)
(此处空一行,使用段落中的空行标准)
Introduction(宋体,加粗,四号) (1)
I. Nature of Translation (加粗,四号,I. 点后空一格) (2)
1.1 Translation Is a Science (小四,不加粗,缩进) (2)
1.2 Translation Is an Art (同上) (4)
II. Prose Cognition (加粗,四号) (10)
2.1 What Is Prose?(小四,不加粗,缩进) (10)
2.2 What Are the Characteristics of Prose? (小四,不加粗) (10)
III. Aesthetics & Translation (11)
Conclusion(加粗,四号) (20)
Bibliography(加粗,四号) (21)
(此页英文字体Times New Roman,汉语宋体;页边距上、左2.5;下、右2.0;除Table of Contents为居中外其余行均为分散对齐;题号点后与题目之间空一格;次级题号与上一行词首对齐;此页不需页码)
段落中的空行标准操作方法:选中文本,点击菜单中的“段落”,选择“段前”空一行或“段后”空一行。
这样做出的空行大小适度,美观工整。
CARBOHYDRATE POLYMERSA Journal Devoted to Scientific and Technological Aspects of Industrially RelevantPolysaccharidesAUTHOR INFORMATION PACK TABLE OF CONTENTS• Description• Audience• Impact Factor• Abstracting and Indexing • Editorial Board• Guide for Authors p.1p.1p.1p.2p.2p.3ISSN: 0144-8617DESCRIPTIONCarbohydrate Polymers covers the study and exploitation of carbohydrate polymers which have current or potential industrial application in areas such as food, textiles, paper, wood, adhesives, biodegradables, biorefining, pharmaceuticals, and oil recovery.Topics include:• studies of structure and properties• biological and industrial development• analytical methods• chemical and microbiological modifications• interactions with other materialsThe role of the carbohydrate polymer must be central to the work reported, not peripheral. Research must be innovative and advance scientific knowledge.The journal publishes review papers, original research papers, short communications, and book reviews. Only papers with international relevance are published.AUDIENCEUniversity and industrial research institutes; users and manufacturers of carbohydrate polymers.IMPACT FACTOR2010: 3.463 © Thomson Reuters Journal Citation Reports 2011ABSTRACTING AND INDEXINGBIOSISChemical AbstractsChemical Engineering Biotechnology AbstractsCurrent Contents/Agriculture, Biology & Environmental SciencesEMBiologyEngineering IndexFood Science and Technology AbstractsPolymer ContentsSCISEARCHScience Citation IndexScopusTheoretical Chemical Engineering AbstractsEDITORIAL BOARDEditorsJ.F. Kennedy, Advanced Science and Technology Institute, 5 The Croft, Buntsford Drive, Stoke Heath, Bromsgrove, B60 4JE, UK, Email: jfk@J.R. Mitchell, School of Biosciences, Div. of Food Sciences, University of Nottingham, College Road, Sutton Bonington, Loughborough, LE12 5RD, UK, Email: john.mitchell@Associate EditorR.A.A. Muzzarelli, Università Politecnica delle Marche, Ancona, ItalyEditorial Board MembersI. Arvanitoyannis, University of Thessaly, Volos, GreeceJ.N. BeMiller, Purdue University, West Lafayette, IN, USAG.G. Birch, University of Reading, Reading, England, UKB.E. Christensen, Norwegian University of Science & Technology (NTNU), Trondheim, NorwayM.A. Coimbra, Universidade de Aveiro, Aveiro, PortugalY. Du, Wuhan University, Wuhan, Hubei, ChinaD.E. Dunstan, University of Melbourne, Parkville, VIC, AustraliaY. Fang, Shaanxi Normal University, Xi'an, ChinaH.P. Fink, Fraunhofer Institute for Applied Polymer Research, Potsdam, GermanyP. Gatenholm, Chalmers University of Technology, Göteborg, SwedenM. Gidley, University of Queensland, St Lucia, QLD, AustraliaP.A.J. Gorin, Universidade Federal do Paraná, Curitiba, Parana, BrazilA. Harada, Osaka, JapanJ. Jane, Iowa State University, Ames, IA, USAS. Kasapis, RMIT University, Melbourne, AustraliaH. Liu, China University of Geosciences, Wuhan, ChinaP Methacanon, Ministry of Science and Technology (Thailand), Pathumthani, ThailandE.R. Morris, University College Cork, Cork, IrelandV.J. Morris, Institute of Food Research, Norwich, UKP. Prasertsan, Prince of Songkla University, Hatyai, ThailandS.B. Ross-Murphy, King's College London, London, England, UKP.A. Sandford, Los Angeles, CA, USAP. Seib, Kansas State University, Manhattan, KS, USAB.C. Simionescu, Romanian Academy, Iasi, RomaniaJ.F. Thibault, Institut National de la Recherche Agronomique INR, Nantes, FranceS. Tokura, Hokkaido University, Sapporo, JapanA.J. Varma, National Chemical Laboratory, Pune, IndiaJ. Vercellotti, V-Labs Inc., Covington, LA, USAQ. Wang, Agriculture and Agri-Food Canada, Guelph, ON, CanadaP.A. Williams, Glyndwr University, Wrexham, England, UKGUIDE FOR AUTHORSINTRODUCTIONCarbohydrate Polymers covers the study and exploitation of carbohydrate polymers which have current or potential industrial application in areas such as food, textiles, paper, wood, adhesives, biodegradables, biorefining, pharmaceuticals, and oil recovery.Topics include:studies of structure and properties biological and industrial development analytical methods chemical and microbiological modifications interactions with other materialsThe role of the carbohydrate polymer must be central to the work reported, not peripheral. At least one named carbohydrate polymer must be mentioned in the paper. Research must be innovative and advance scientific knowledge.Examples of papers which are not appropriate for Carbohydrate Polymers include:papers which major in biological, physiological and pharmacological aspects of non-carbohydrate molecules attached to, or mixed with, carbohydrate polymers; papers on the materials science of biocomposites where there is no mention of any specific carbohydrate polymer, or the role of the carbohydrate polymer is not central to the study.Types of paperOriginal full-length research papers should contain material that has not been previously published elsewhere, except in a preliminary form. These papers should not exceed 6000 words of text and generally not more than eight figures/tables.Review papers will be accepted in areas of topical interest and will normally emphasise literature published over the previous five years. They should not exceed 12,000 words plus figures, tables and references.Short Communications are research papers constituting a concise but complete description of a limited investigation, which will not be included in a later paper. Short Communications should be as completely documented, both by reference to literature, and description of the experimental procedures employed, as a regular paper. They should not occupy more than 2,000 words plus figures, tables and references. They will be reviewed in the same way as research papers.Letters to the Editor are published from time to time on subjects of topical interest.Book reviews are commissioned by the Editors as warranted.Contact details for submissionContributors must submit their articles electronically via the Elsevier Editorial System /carbpol This is the only method of submission, and facilitates processing of your article.Review ProcessA peer review system is used to ensure high quality of papers accepted for publication. The Editors will reject papers without formal review when it is deemed that the paper is 1) on a topic outside the scope of the Journal, 2) lacking technical merit, 3) of narrow regional scope and significance, 4) does not advance scientific knowledge, or 5) is poorly written.Any revised papers returned later than three months after being sent the referees' comments will be treated as a new submission. When submitting a revised paper authors must list all of the reviewer's comments and indicate how they have responded to the comment, and where in the paper they have made appropriate revisions.Page chargesThis journal has no page charges.BEFORE YOU BEGINEthics in publishingFor information on Ethics in publishing and Ethical guidelines for journal publication see /publishingethics and /ethicalguidelines.Conflict of interestAll authors are requested to disclose any actual or potential conflict of interest including any financial, personal or other relationships with other people or organizations within three years of beginning the submitted work that could inappropriately influence, or be perceived to influence, their work. See also /conflictsofinterest.Submission declaration and verificationSubmission of an article implies that the work described has not been published previously (except in the form of an abstract or as part of a published lecture or academic thesis), that it is not under consideration for publication elsewhere, that its publication is approved by all authors and tacitly or explicitly by the responsible authorities where the work was carried out, and that, if accepted, it will not be published elsewhere in the same form, in English or in any other language, including electronically without the written consent of the copyright-holder. To verify originality, your article may be checked by the originality detection software iThenticate. 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DIRECTIVE NUMBER: CPL 02-00-150 EFFECTIVE DATE: April 22, 2011 SUBJECT: Field Operations Manual (FOM)ABSTRACTPurpose: This instruction cancels and replaces OSHA Instruction CPL 02-00-148,Field Operations Manual (FOM), issued November 9, 2009, whichreplaced the September 26, 1994 Instruction that implemented the FieldInspection Reference Manual (FIRM). The FOM is a revision of OSHA’senforcement policies and procedures manual that provides the field officesa reference document for identifying the responsibilities associated withthe majority of their inspection duties. This Instruction also cancels OSHAInstruction FAP 01-00-003 Federal Agency Safety and Health Programs,May 17, 1996 and Chapter 13 of OSHA Instruction CPL 02-00-045,Revised Field Operations Manual, June 15, 1989.Scope: OSHA-wide.References: Title 29 Code of Federal Regulations §1903.6, Advance Notice ofInspections; 29 Code of Federal Regulations §1903.14, Policy RegardingEmployee Rescue Activities; 29 Code of Federal Regulations §1903.19,Abatement Verification; 29 Code of Federal Regulations §1904.39,Reporting Fatalities and Multiple Hospitalizations to OSHA; and Housingfor Agricultural Workers: Final Rule, Federal Register, March 4, 1980 (45FR 14180).Cancellations: OSHA Instruction CPL 02-00-148, Field Operations Manual, November9, 2009.OSHA Instruction FAP 01-00-003, Federal Agency Safety and HealthPrograms, May 17, 1996.Chapter 13 of OSHA Instruction CPL 02-00-045, Revised FieldOperations Manual, June 15, 1989.State Impact: Notice of Intent and Adoption required. See paragraph VI.Action Offices: National, Regional, and Area OfficesOriginating Office: Directorate of Enforcement Programs Contact: Directorate of Enforcement ProgramsOffice of General Industry Enforcement200 Constitution Avenue, NW, N3 119Washington, DC 20210202-693-1850By and Under the Authority ofDavid Michaels, PhD, MPHAssistant SecretaryExecutive SummaryThis instruction cancels and replaces OSHA Instruction CPL 02-00-148, Field Operations Manual (FOM), issued November 9, 2009. The one remaining part of the prior Field Operations Manual, the chapter on Disclosure, will be added at a later date. This Instruction also cancels OSHA Instruction FAP 01-00-003 Federal Agency Safety and Health Programs, May 17, 1996 and Chapter 13 of OSHA Instruction CPL 02-00-045, Revised Field Operations Manual, June 15, 1989. This Instruction constitutes OSHA’s general enforcement policies and procedures manual for use by the field offices in conducting inspections, issuing citations and proposing penalties.Significant Changes∙A new Table of Contents for the entire FOM is added.∙ A new References section for the entire FOM is added∙ A new Cancellations section for the entire FOM is added.∙Adds a Maritime Industry Sector to Section III of Chapter 10, Industry Sectors.∙Revises sections referring to the Enhanced Enforcement Program (EEP) replacing the information with the Severe Violator Enforcement Program (SVEP).∙Adds Chapter 13, Federal Agency Field Activities.∙Cancels OSHA Instruction FAP 01-00-003, Federal Agency Safety and Health Programs, May 17, 1996.DisclaimerThis manual is intended to provide instruction regarding some of the internal operations of the Occupational Safety and Health Administration (OSHA), and is solely for the benefit of the Government. No duties, rights, or benefits, substantive or procedural, are created or implied by this manual. The contents of this manual are not enforceable by any person or entity against the Department of Labor or the United States. Statements which reflect current Occupational Safety and Health Review Commission or court precedents do not necessarily indicate acquiescence with those precedents.Table of ContentsCHAPTER 1INTRODUCTIONI.PURPOSE. ........................................................................................................... 1-1 II.SCOPE. ................................................................................................................ 1-1 III.REFERENCES .................................................................................................... 1-1 IV.CANCELLATIONS............................................................................................. 1-8 V. ACTION INFORMATION ................................................................................. 1-8A.R ESPONSIBLE O FFICE.......................................................................................................................................... 1-8B.A CTION O FFICES. .................................................................................................................... 1-8C. I NFORMATION O FFICES............................................................................................................ 1-8 VI. STATE IMPACT. ................................................................................................ 1-8 VII.SIGNIFICANT CHANGES. ............................................................................... 1-9 VIII.BACKGROUND. ................................................................................................. 1-9 IX. DEFINITIONS AND TERMINOLOGY. ........................................................ 1-10A.T HE A CT................................................................................................................................................................. 1-10B. C OMPLIANCE S AFETY AND H EALTH O FFICER (CSHO). ...........................................................1-10B.H E/S HE AND H IS/H ERS ..................................................................................................................................... 1-10C.P ROFESSIONAL J UDGMENT............................................................................................................................... 1-10E. W ORKPLACE AND W ORKSITE ......................................................................................................................... 1-10CHAPTER 2PROGRAM PLANNINGI.INTRODUCTION ............................................................................................... 2-1 II.AREA OFFICE RESPONSIBILITIES. .............................................................. 2-1A.P ROVIDING A SSISTANCE TO S MALL E MPLOYERS. ...................................................................................... 2-1B.A REA O FFICE O UTREACH P ROGRAM. ............................................................................................................. 2-1C. R ESPONDING TO R EQUESTS FOR A SSISTANCE. ............................................................................................ 2-2 III. OSHA COOPERATIVE PROGRAMS OVERVIEW. ...................................... 2-2A.V OLUNTARY P ROTECTION P ROGRAM (VPP). ........................................................................... 2-2B.O NSITE C ONSULTATION P ROGRAM. ................................................................................................................ 2-2C.S TRATEGIC P ARTNERSHIPS................................................................................................................................. 2-3D.A LLIANCE P ROGRAM ........................................................................................................................................... 2-3 IV. ENFORCEMENT PROGRAM SCHEDULING. ................................................ 2-4A.G ENERAL ................................................................................................................................................................. 2-4B.I NSPECTION P RIORITY C RITERIA. ..................................................................................................................... 2-4C.E FFECT OF C ONTEST ............................................................................................................................................ 2-5D.E NFORCEMENT E XEMPTIONS AND L IMITATIONS. ....................................................................................... 2-6E.P REEMPTION BY A NOTHER F EDERAL A GENCY ........................................................................................... 2-6F.U NITED S TATES P OSTAL S ERVICE. .................................................................................................................. 2-7G.H OME-B ASED W ORKSITES. ................................................................................................................................ 2-8H.I NSPECTION/I NVESTIGATION T YPES. ............................................................................................................... 2-8 V.UNPROGRAMMED ACTIVITY – HAZARD EVALUATION AND INSPECTION SCHEDULING ............................................................................ 2-9 VI.PROGRAMMED INSPECTIONS. ................................................................... 2-10A.S ITE-S PECIFIC T ARGETING (SST) P ROGRAM. ............................................................................................. 2-10B.S CHEDULING FOR C ONSTRUCTION I NSPECTIONS. ..................................................................................... 2-10C.S CHEDULING FOR M ARITIME I NSPECTIONS. ............................................................................. 2-11D.S PECIAL E MPHASIS P ROGRAMS (SEP S). ................................................................................... 2-12E.N ATIONAL E MPHASIS P ROGRAMS (NEP S) ............................................................................... 2-13F.L OCAL E MPHASIS P ROGRAMS (LEP S) AND R EGIONAL E MPHASIS P ROGRAMS (REP S) ............ 2-13G.O THER S PECIAL P ROGRAMS. ............................................................................................................................ 2-13H.I NSPECTION S CHEDULING AND I NTERFACE WITH C OOPERATIVE P ROGRAM P ARTICIPANTS ....... 2-13CHAPTER 3INSPECTION PROCEDURESI.INSPECTION PREPARATION. .......................................................................... 3-1 II.INSPECTION PLANNING. .................................................................................. 3-1A.R EVIEW OF I NSPECTION H ISTORY .................................................................................................................... 3-1B.R EVIEW OF C OOPERATIVE P ROGRAM P ARTICIPATION .............................................................................. 3-1C.OSHA D ATA I NITIATIVE (ODI) D ATA R EVIEW .......................................................................................... 3-2D.S AFETY AND H EALTH I SSUES R ELATING TO CSHO S.................................................................. 3-2E.A DVANCE N OTICE. ................................................................................................................................................ 3-3F.P RE-I NSPECTION C OMPULSORY P ROCESS ...................................................................................................... 3-5G.P ERSONAL S ECURITY C LEARANCE. ................................................................................................................. 3-5H.E XPERT A SSISTANCE. ........................................................................................................................................... 3-5 III. INSPECTION SCOPE. ......................................................................................... 3-6A.C OMPREHENSIVE ................................................................................................................................................... 3-6B.P ARTIAL. ................................................................................................................................................................... 3-6 IV. CONDUCT OF INSPECTION .............................................................................. 3-6A.T IME OF I NSPECTION............................................................................................................................................. 3-6B.P RESENTING C REDENTIALS. ............................................................................................................................... 3-6C.R EFUSAL TO P ERMIT I NSPECTION AND I NTERFERENCE ............................................................................. 3-7D.E MPLOYEE P ARTICIPATION. ............................................................................................................................... 3-9E.R ELEASE FOR E NTRY ............................................................................................................................................ 3-9F.B ANKRUPT OR O UT OF B USINESS. .................................................................................................................... 3-9G.E MPLOYEE R ESPONSIBILITIES. ................................................................................................. 3-10H.S TRIKE OR L ABOR D ISPUTE ............................................................................................................................. 3-10I. V ARIANCES. .......................................................................................................................................................... 3-11 V. OPENING CONFERENCE. ................................................................................ 3-11A.G ENERAL ................................................................................................................................................................ 3-11B.R EVIEW OF A PPROPRIATION A CT E XEMPTIONS AND L IMITATION. ..................................................... 3-13C.R EVIEW S CREENING FOR P ROCESS S AFETY M ANAGEMENT (PSM) C OVERAGE............................. 3-13D.R EVIEW OF V OLUNTARY C OMPLIANCE P ROGRAMS. ................................................................................ 3-14E.D ISRUPTIVE C ONDUCT. ...................................................................................................................................... 3-15F.C LASSIFIED A REAS ............................................................................................................................................. 3-16VI. REVIEW OF RECORDS. ................................................................................... 3-16A.I NJURY AND I LLNESS R ECORDS...................................................................................................................... 3-16B.R ECORDING C RITERIA. ...................................................................................................................................... 3-18C. R ECORDKEEPING D EFICIENCIES. .................................................................................................................. 3-18 VII. WALKAROUND INSPECTION. ....................................................................... 3-19A.W ALKAROUND R EPRESENTATIVES ............................................................................................................... 3-19B.E VALUATION OF S AFETY AND H EALTH M ANAGEMENT S YSTEM. ....................................................... 3-20C.R ECORD A LL F ACTS P ERTINENT TO A V IOLATION. ................................................................................. 3-20D.T ESTIFYING IN H EARINGS ................................................................................................................................ 3-21E.T RADE S ECRETS. ................................................................................................................................................. 3-21F.C OLLECTING S AMPLES. ..................................................................................................................................... 3-22G.P HOTOGRAPHS AND V IDEOTAPES.................................................................................................................. 3-22H.V IOLATIONS OF O THER L AWS. ....................................................................................................................... 3-23I.I NTERVIEWS OF N ON-M ANAGERIAL E MPLOYEES .................................................................................... 3-23J.M ULTI-E MPLOYER W ORKSITES ..................................................................................................................... 3-27 K.A DMINISTRATIVE S UBPOENA.......................................................................................................................... 3-27 L.E MPLOYER A BATEMENT A SSISTANCE. ........................................................................................................ 3-27 VIII. CLOSING CONFERENCE. .............................................................................. 3-28A.P ARTICIPANTS. ..................................................................................................................................................... 3-28B.D ISCUSSION I TEMS. ............................................................................................................................................ 3-28C.A DVICE TO A TTENDEES .................................................................................................................................... 3-29D.P ENALTIES............................................................................................................................................................. 3-30E.F EASIBLE A DMINISTRATIVE, W ORK P RACTICE AND E NGINEERING C ONTROLS. ............................ 3-30F.R EDUCING E MPLOYEE E XPOSURE. ................................................................................................................ 3-32G.A BATEMENT V ERIFICATION. ........................................................................................................................... 3-32H.E MPLOYEE D ISCRIMINATION .......................................................................................................................... 3-33 IX. SPECIAL INSPECTION PROCEDURES. ...................................................... 3-33A.F OLLOW-UP AND M ONITORING I NSPECTIONS............................................................................................ 3-33B.C ONSTRUCTION I NSPECTIONS ......................................................................................................................... 3-34C. F EDERAL A GENCY I NSPECTIONS. ................................................................................................................. 3-35CHAPTER 4VIOLATIONSI. BASIS OF VIOLATIONS ..................................................................................... 4-1A.S TANDARDS AND R EGULATIONS. .................................................................................................................... 4-1B.E MPLOYEE E XPOSURE. ........................................................................................................................................ 4-3C.R EGULATORY R EQUIREMENTS. ........................................................................................................................ 4-6D.H AZARD C OMMUNICATION. .............................................................................................................................. 4-6E. E MPLOYER/E MPLOYEE R ESPONSIBILITIES ................................................................................................... 4-6 II. SERIOUS VIOLATIONS. .................................................................................... 4-8A.S ECTION 17(K). ......................................................................................................................... 4-8B.E STABLISHING S ERIOUS V IOLATIONS ............................................................................................................ 4-8C. F OUR S TEPS TO BE D OCUMENTED. ................................................................................................................... 4-8 III. GENERAL DUTY REQUIREMENTS ............................................................. 4-14A.E VALUATION OF G ENERAL D UTY R EQUIREMENTS ................................................................................. 4-14B.E LEMENTS OF A G ENERAL D UTY R EQUIREMENT V IOLATION.............................................................. 4-14C. U SE OF THE G ENERAL D UTY C LAUSE ........................................................................................................ 4-23D.L IMITATIONS OF U SE OF THE G ENERAL D UTY C LAUSE. ..............................................................E.C LASSIFICATION OF V IOLATIONS C ITED U NDER THE G ENERAL D UTY C LAUSE. ..................F. P ROCEDURES FOR I MPLEMENTATION OF S ECTION 5(A)(1) E NFORCEMENT ............................ 4-25 4-27 4-27IV.OTHER-THAN-SERIOUS VIOLATIONS ............................................... 4-28 V.WILLFUL VIOLATIONS. ......................................................................... 4-28A.I NTENTIONAL D ISREGARD V IOLATIONS. ..........................................................................................4-28B.P LAIN I NDIFFERENCE V IOLATIONS. ...................................................................................................4-29 VI. CRIMINAL/WILLFUL VIOLATIONS. ................................................... 4-30A.A REA D IRECTOR C OORDINATION ....................................................................................................... 4-31B.C RITERIA FOR I NVESTIGATING P OSSIBLE C RIMINAL/W ILLFUL V IOLATIONS ........................ 4-31C. W ILLFUL V IOLATIONS R ELATED TO A F ATALITY .......................................................................... 4-32 VII. REPEATED VIOLATIONS. ...................................................................... 4-32A.F EDERAL AND S TATE P LAN V IOLATIONS. ........................................................................................4-32B.I DENTICAL S TANDARDS. .......................................................................................................................4-32C.D IFFERENT S TANDARDS. .......................................................................................................................4-33D.O BTAINING I NSPECTION H ISTORY. .....................................................................................................4-33E.T IME L IMITATIONS..................................................................................................................................4-34F.R EPEATED V. F AILURE TO A BATE....................................................................................................... 4-34G. A REA D IRECTOR R ESPONSIBILITIES. .............................................................................. 4-35 VIII. DE MINIMIS CONDITIONS. ................................................................... 4-36A.C RITERIA ................................................................................................................................................... 4-36B.P ROFESSIONAL J UDGMENT. ..................................................................................................................4-37C. A REA D IRECTOR R ESPONSIBILITIES. .............................................................................. 4-37 IX. CITING IN THE ALTERNATIVE ............................................................ 4-37 X. COMBINING AND GROUPING VIOLATIONS. ................................... 4-37A.C OMBINING. ..............................................................................................................................................4-37B.G ROUPING. ................................................................................................................................................4-38C. W HEN N OT TO G ROUP OR C OMBINE. ................................................................................................4-38 XI. HEALTH STANDARD VIOLATIONS ....................................................... 4-39A.C ITATION OF V ENTILATION S TANDARDS ......................................................................................... 4-39B.V IOLATIONS OF THE N OISE S TANDARD. ...........................................................................................4-40 XII. VIOLATIONS OF THE RESPIRATORY PROTECTION STANDARD(§1910.134). ....................................................................................................... XIII. VIOLATIONS OF AIR CONTAMINANT STANDARDS (§1910.1000) ... 4-43 4-43A.R EQUIREMENTS UNDER THE STANDARD: .................................................................................................. 4-43B.C LASSIFICATION OF V IOLATIONS OF A IR C ONTAMINANT S TANDARDS. ......................................... 4-43 XIV. CITING IMPROPER PERSONAL HYGIENE PRACTICES. ................... 4-45A.I NGESTION H AZARDS. .................................................................................................................................... 4-45B.A BSORPTION H AZARDS. ................................................................................................................................ 4-46C.W IPE S AMPLING. ............................................................................................................................................. 4-46D.C ITATION P OLICY ............................................................................................................................................ 4-46 XV. BIOLOGICAL MONITORING. ...................................................................... 4-47CHAPTER 5CASE FILE PREPARATION AND DOCUMENTATIONI.INTRODUCTION ............................................................................................... 5-1 II.INSPECTION CONDUCTED, CITATIONS BEING ISSUED. .................... 5-1A.OSHA-1 ................................................................................................................................... 5-1B.OSHA-1A. ............................................................................................................................... 5-1C. OSHA-1B. ................................................................................................................................ 5-2 III.INSPECTION CONDUCTED BUT NO CITATIONS ISSUED .................... 5-5 IV.NO INSPECTION ............................................................................................... 5-5 V. HEALTH INSPECTIONS. ................................................................................. 5-6A.D OCUMENT P OTENTIAL E XPOSURE. ............................................................................................................... 5-6B.E MPLOYER’S O CCUPATIONAL S AFETY AND H EALTH S YSTEM. ............................................................. 5-6 VI. AFFIRMATIVE DEFENSES............................................................................. 5-8A.B URDEN OF P ROOF. .............................................................................................................................................. 5-8B.E XPLANATIONS. ..................................................................................................................................................... 5-8 VII. INTERVIEW STATEMENTS. ........................................................................ 5-10A.G ENERALLY. ......................................................................................................................................................... 5-10B.CSHO S SHALL OBTAIN WRITTEN STATEMENTS WHEN: .......................................................................... 5-10C.L ANGUAGE AND W ORDING OF S TATEMENT. ............................................................................................. 5-11D.R EFUSAL TO S IGN S TATEMENT ...................................................................................................................... 5-11E.V IDEO AND A UDIOTAPED S TATEMENTS. ..................................................................................................... 5-11F.A DMINISTRATIVE D EPOSITIONS. .............................................................................................5-11 VIII. PAPERWORK AND WRITTEN PROGRAM REQUIREMENTS. .......... 5-12 IX.GUIDELINES FOR CASE FILE DOCUMENTATION FOR USE WITH VIDEOTAPES AND AUDIOTAPES .............................................................. 5-12 X.CASE FILE ACTIVITY DIARY SHEET. ..................................................... 5-12 XI. CITATIONS. ..................................................................................................... 5-12A.S TATUTE OF L IMITATIONS. .............................................................................................................................. 5-13B.I SSUING C ITATIONS. ........................................................................................................................................... 5-13C.A MENDING/W ITHDRAWING C ITATIONS AND N OTIFICATION OF P ENALTIES. .................................. 5-13D.P ROCEDURES FOR A MENDING OR W ITHDRAWING C ITATIONS ............................................................ 5-14 XII. INSPECTION RECORDS. ............................................................................... 5-15A.G ENERALLY. ......................................................................................................................................................... 5-15B.R ELEASE OF I NSPECTION I NFORMATION ..................................................................................................... 5-15C. C LASSIFIED AND T RADE S ECRET I NFORMATION ...................................................................................... 5-16。
英语作文目录模板Table of Contents。
1. Introduction。
2. Importance of a Table of Contents。
3. Elements of a Table of Contents。
4. How to Create a Table of Contents。
5. Tips for Creating an Effective Table of Contents。
6. Conclusion。
Introduction。
A table of contents is a crucial component of any document, whether it is a book, report, or research paper. It provides a roadmap for the reader, allowing them to quickly locate specific sections and navigate through the document with ease. In this article, we will explore the importance of a table of contents, the key elements it should include, and how to create an effective one.Importance of a Table of Contents。
A table of contents serves several important purposes. First and foremost, it helps the reader to quickly find the information they are looking for within a document. This is especially useful in lengthy documents, where locating specific sections can be time-consuming without a table of contents.Additionally, a table of contents provides a high-level overview of the document's structure and organization. This can be particularly helpful for readers who want to understand the scope of the document before diving into the details.Furthermore, a well-structured table of contents can enhance the overall professionalism and readability of a document. It shows that the author has taken the time to organize their work in a clear and logical manner, which can make a positive impression on the reader.Elements of a Table of Contents。
英语作文中报道的格式要求When writing a report in English, there are several keyformat requirements to follow to ensure clarity, organization, and professionalism. Here's a breakdown of the typical structure and components of an English report:1. Title Page: This is the first page of your report and should include the title of the report, your name, the nameof your institution, and the date.2. Abstract: A brief summary of the entire report, usuallynot exceeding 200 words. It should highlight the main points, findings, and conclusions.3. Table of Contents: A list of the sections and subsectionsof your report, along with their corresponding page numbers.4. Introduction: This section sets the context for your report. It should include the purpose of the report, the research question or problem statement, and a brief overviewof the methodology.5. Literature Review: A section where you summarize and synthesize existing research on the topic. This helps to establish the knowledge base and shows how your report contributes to the existing body of work.6. Methodology: A detailed description of how you conductedyour research. This includes the research design, data collection, and analysis methods.7. Results: Present the findings of your research in a clear and organized manner. Use tables, charts, and graphs where appropriate to illustrate your data.8. Discussion: Interpret the results and discuss their significance. This is where you analyze the data, relate it back to the literature, and answer the research question.9. Conclusion: Summarize the main findings, their implications, and the answer to the research question. Also, suggest areas for further research.10. Recommendations: Based on your findings, provide recommendations for practice or policy.11. References: A list of all the sources you cited in your report, formatted according to a specific citation style (e.g., APA, MLA, Chicago).12. Appendices: Any additional information that supports your report but isn't essential to the flow of the main text, such as raw data, detailed tables, or extended versions of graphs.13. Glossary: If your report includes technical terms or jargon, a glossary can be helpful for readers.14. Acknowledgments: A section to thank individuals or organizations that contributed to the research.Remember to follow any specific guidelines provided by your institution or instructor, as these may vary. Additionally, ensure that your report is well-organized, uses clear and concise language, and adheres to the conventions of academic writing.。
PROJECT REPORT32K-BIT SLEEPY SRAMVLSI-I PROJECT DOCUMENT JOON-SUNG YANG / GAHNGSOO MOONDEC. 9, 2005TABLE OF CONTENTSI.ABSTRACT (3)II.INTRODUCTION (3)III.SPECIFICATION (5)IV.DESIGN (6)A.T RANSISTOR S IZING (6)B.W IRE M ODEL (9)C.C LUSTERING & D ELAY D ISTRIBUTION (10)ER DOCUMENT (12)A.T ITLE (12)B.G ENERAL D ESCRIPTION (12)VI.TESTING (14)VII.RESULT & OPTIMIZATION (16)VIII.REFERENCES (18)IX.APPENDIX (18)A.S CHEMATIC D IAGRAMS (18)23I. ABSTRA CTThe most research on the power consumption of circuits has been concentrated on the switching power and the power dissipated by the leakage current has been relatively minor area. However, in the current VLSI process, the sub-threshold current becomes the one of the major factors of the power consumption, especially in high-end memory. To reduce the leakage power in the SRAM, the power gating method can be applied and a major technique of the power gating is using sleep transistors to control the sub-threshold current. In this project, dual threshold voltages are adopted; normal SRAM cells have lower threshold voltages and THE higher threshold voltages control the sleep transistors. The size of sleep transistors can be chosen by the worst case current and are applied to every block.For this project, we extend our discussion and present the result on the advantages of using sleep transistor in terms of delay, area and power reduction. The simulation of sleepy 32K-bit SRAM in tsmc 20µm process, showed 47% of power saving without getting worst-case delay increased.Index Terms: SRAM, sub-threshold current, leakage power, sleep transistor, delay, power savingII. INTRODUCTIONComplementary metal-oxide semiconductor (CMOS) technology development brings the performance enhancement and new challenges in VLSI circuit design such as process variation and increasing transistor leakage. The leakage current expressed as,)(8.1200)(0e V L W C I where eI I T ox nV V V leakage Tth gs µ==!takes more and more proportion in modern VLSI process as semiconductor devices are getting smaller and smaller. The following figures show the trend of the leakage power in terms of fabrication process. High-performance VLSI design is steadily required with the development of CMOS technology.The demand for static random-access memory (SRAM) is increasing with large use of SRAM in mobile products, System On-Chip (SoC) and high-performance VLSI circuits. As the density of SRAM increases, the leakage power has become a significant component in chip design. A various methods have been adopted to reduce the leakage power. In this project, multi-threshold voltage is applied to construct sleep transistors that has higher threshold voltage. However, those multi-threshold voltages must reflect the characteristic of SRAM. That is, memory is generally a huge cluster of cells so the performance and cost may depend on clustering for higher threshold voltage or overall layout. Additionally, the analysis should include about the wire model and transistor sizing as well.45 III. SPECIFICA TIONFirst, the sort of SRAM is to be determined. SRAM is roughly divided into two groups, sense amp SRAM and normal SRAM without sense amp. Sense Amp using SRAM is better for small signal handling and it is true that this kind SRAM has advantages over normal one. But a disadvantage is sense amp using SRAM takes difficulty in handling threshold voltages. So in this project, normal 6T SRAM is to be used as the main area we are interested in is the leakage power reduction using multi-threshold voltages.There are many factors for 32K-bit SRAM, but this project will focus on the major parameters that can directly affect the indices we are interested in. Key parameters are listed as,Parameters Values Supply Voltage3.3VnMOS Threshold Voltage V t,HI = 0.5V, V t,LO = 0.38V pMOS Threshold VoltageV t,HI = -0.5V, V t,LO = -0.38V[Table III-1] Major Controllable ParametersOf course, transistor sizing is one of critical factors and accordingly carrier mobility must be taken into consideration. But we assume that parameter as uncontrollable, and accept it. The ratio between the mobility of n-type and p-type transistors is, in this project, 2.37; electron mobility, µn ≈ 275cm 2/(V ⋅s), hole mobility, µp ≈ 116cm 2/(V ⋅s).[Figure III-1] Overview of 32K-bit Sleepy SRAMAnother fact that must be considered is that memory is quite slower compared with a processor unit, and because memory is a sort of size critical devices, the overall area should be limited at a proper level.This is why sleep transistors are applied partially not to the whole system. The target values for 32K-bit SRAM are arranged below.Gain/Overhead TargetPower Reduction 40~50%Area Overhead Leakage Control Transistor 10~15%Worst-case Delay 0% IncreasedDelay OverheadBest-case Delay 20% Increased[Table III-2] Target Values for 32K-bit Sleepy SRAMDelay overhead might mislead that the overall delay is increased 20%. But the delay here separates the best and worst cases, so the maximum latency remains the same; the fastest latency before might not be kept. And considering the performance is generally determined by the worst-case delay, the targeted value can be interpreted as zero delay increased with large leakage power reduction.And the transistor models and tools for the design, implementation and testing is,Tool/Simulator Cadence/Hspice/Verilog-XLTechnology 0.20µmTransistor Model tsmc20N, tsmc20P[Table III-3] Tools & Models for 32K-bit Sleepy SRAMIV.DESIGNA.T RANSISTOR S IZINGTransistor sizing for SRAM can be approached in two ways. One is the basic 6T transistor sizing. For the function of SRAM cell, read & write stability needs to be guaranteed. In read stability, N1 transistor is required to be much larger than N5 transistor to make sure that node between N1 and N5 transistors must not flip. When in write mode, bit lines (BL or BL_b) overpower cell with new value. However, high bit lines must not overpower inverters during read operation. That results in the determination of sizing P3 transistor weaker than N5 transistor.67[Figure IV-1] Diagram of Sleepy SRAM CellTransistorW/L N1 600nm/200nm N2 600nm/200nm N3 200nm/200nm N4 200nm/200nm N5 300nm/200nm N6 300nm/200nm P1 300nm/200nm P2 300nm/200nm P3200nm/200nm P4200nm/200nm[Table IV-1] Transistor Sizing of Sleepy SRAM CellThe sleep transistors for pull-up and pull-down network are used to 6T SRAM cell for the purpose of reducing the leakage current. Once the 6T SRAM sizing is determined, we are able to start to size the sleep transistors in heuristic way. In sizing sleep transistors, we need to approach with the following mathematical equations that state SRAM performance with existence of sleep transistors and leakage current. For n-type MOSFET, when the sleep transistor is used, delay is increased with V X , the voltage at the node between N1 & N3.For n-type MOSFET, N1 should be in saturation mode when conducting the maximum current.!")(,n tL DD DDL d V V V C #$!")(,,n tL n X DDDDL sleep d V V V V C ##$Suppose Δp the rate of tolerance for the delay penalty, thenn p sleep nd nd ,,,1!"=##And setting the scaling factor, α = 1 gives,)(,,,n tL DD n p n X V V V !"=So the amount of current flowing through the linearly operating sleep transistor calculated as,!!"#$$%&'('!"#$%&=2)(2,,,,,n X n X n tH DD n sleep ox n nsleep V V V V L W C I µBy the similar fashion, the leakage current through p-type sleep transistor is found as,8!")(,,p tL DD DDL p d V V V C +#$!")(,,p tL p X DDL sleep d V V V C +#$)()(,,p tL DD p p X DD V V V V !"=!!!"#$$%&'''(+'!"#$%&=2)()()(2,,,,,DD p X DD p X p tH DD p sleep ox p psleep V V V V V V L W C I µThe arranged sizing data for n-type sleep transistor follow as,TypeΔpenalty Rate(W/L)sleep I calculated I measured V X 0.197 0.50 6.394E-05 A 6.403E-05 A 5.752E-01 V 0.130 1.00 9.181E-05 A 9.206E-05 A 3.796E-01 V 0.100 1.50 1.098E-04 A 1.100E-04 A 2.920E-01 V 0.081 2.00 1.212E-04 A 1.231E-04 A 2.365E-01 V 0.063 3.00 1.443E-04 A 1.420E-04 A 1.840E-01 V 0.050 4.00 1.549E-04 A 1.530E-04 A 1.460E-01 V nMOS0.0425.001.641E-04 A1.612E-04 A1.226E-01 V[Table IV-2] Transistor Sizing Data for n-type Sleep TransistorAnd for the p-type sleep transistor,TypeΔpenalty Rate (W/L)sleep I calculated I measured V X 0.171 0.50 1.356E-04 A 1.337E-04 A 4.993E-01 V 0.123 1.00 2.070E-04 A 2.079E-04 A 3.592E-01 V 0.089 1.50 2.338E-04 A 2.316E-04 A 2.599E-01 V 0.070 2.00 2.506E-04 A 2.513E-04 A 2.044E-01 V 0.051 3.00 2.797E-04 A 2.766E-04 A 1.489E-01 V 0.039 4.00 2.889E-04 A 2.919E-04 A 1.139E-01 V pMOS0.0335.003.076E-04 A3.002E-04 A9.636E-02 V[Table IV-3] Transistor Sizing Data for p-type Sleep TransistorFor both n-type & p-type, sizing was selected to be (W/L) = 1, because memory is a size critical devices and only SRAM cell capable of tolerating up to 50% delay penalty will have sleep transistors. In other words, all the sizing listed in the above tables do not increase the worst-case delay so once delay requirement is met, then transistor size should meet the other key requirement such as area load.The last one is sizing for the peripheral transistors of SRAM. Basically the operation of SRAM is pre-charging and evaluating, and reminding each of bit line has large capacitances, discharging transistors should be large enough to evaluate the signal fast. And pre-charge transistors should be weak in order that writing function operates efficiently.[Figure IV-2] Conceptual Diagram of SRAM Column Transistor W/L N1400nm/200nmN2 400nm/200nmN3 400nm/200nmN4 400nm/200nmP1 300nm/200nmP2 300nm/200nm[Table IV-4] Sizing of SRAM Peripheral TransistorB.W IRE M ODELGenerally, memory is an array of huge number, which in turn means word line and bit line confront a large wire load. So it is necessary to include the proper wire model into simulation. Moreover, it is nearly impossible to simulate the whole 32K-bit SRAM Cell; hence the cells on the critical path are sampled and simulated. This limitation requires the wire model should include not only the resistance and capacitance of the wire itself but also the gate and junction capacitance connected to the wire. Starting with the area of the cell, the area of SRAM cell is 26×45λ.The above area is based on the 6T transistor SRAM cell design – a sleepy SRAM cell consists of 10 transistors – but because the estimated value is a conservative and non-optimized, so there should be no significant size increase of SRAM cell array. Therefore we are able to apply this value to estimate the whole SRAM array. 3-segment Pi model was adopted as the 3-segment Pi model estimates the wire characteristics within 3% error and to get the accurate result, each capacitance includes the gate for word lines and junction capacitance for bit lines.[Figure IV-3] Diagram of 3-Segment Pi Wire Model9Type R C1 C2 Word Line 122 mΩ0.278 fF 0.556 fFBit Line 211 mΩ0.235 fF0.470 fF[Table IV-5] Numerical Values for 3-Segment Pi Wire ModelOne of the important reasons for the wire models is that wire delay determines overall layout. In other words, sleep transistor can be placed only in the cell able to tolerate the load along sleep transistor. The result of wire simulation deserves to be recognized. Table below shows roughly double delay along bit lines, but there is not critical difference along word lines. This is sort of surprising but makes sense. As each transistor gating word line needs V t,n not V DD/2, Word line delay take slight charge on the delay.Delay 127 Word Lines 255 Word Lines128 Bit Lines 9.436E-10 sec 9.597E-10 sec64 Bit Lines 5.061E-10 sec 5.222E-10 sec[Table IV-6] Wire Delay simulation for Critical Positions[Figure IV-4] Wire Model Simulation WaveformC.C LUSTERING & D ELAY D ISTRIBUTIONLeakage power reduction using multi-threshold voltages shows different spectrum depending on the clustering size. Generally known is, global block severely count on the input vector and but it has reduced area overhead. Meanwhile, local block has input-independent delay overhead but quite large area overload. So mostly hybrid technique is applied, which means installing sleep transistor by block. However that hybrid technique requires a logically homogeneous block and for this project, each SRAM cell is logically10and perfectly independent from each other. Therefore, hybrid technique cannot be a candidate and only local sleep transistor can be applied, because each of SRAM cell may have logical “1” or logical “0” values without any rule. This constraints narrows choices and make layout more conspicuous. Instead of clustering, partial install of sleep transistor is chosen for the alternative.Seeing the wire model simulation result, the whole SRAM cells can be grouped into two categories, cells near critical path and cells with more slack. The next figure shows this relation and if sleep transistors are used in the latter group then the leakage power will be reduced without increasing the worst-case delay.[Figure IV-5] Word Line & Bit Line Delay Distribution without Sleep Transistors Another figure below shows the delay distribution expected when sleepy transistors are partially used for the cells with more slack.[Figure IV-6] Word Line & Bit Line Delay Distribution with Sleep Transistors Theoretically, if multiple sleep transistors are placed depending on the amount of slack so that all the delays are equal, then leakage power reduction can be maximized without increasing the worst-case delay. But practically, the number of threshold voltage is limited to two, and heterogeneous cells require additional processing steps, so cost may cover the benefit of leakage power reduction. Therefore, dual threshold voltages and locally installed sleep transistors by group are the optimal strategy for this project as in [Figure III-1] Overview of 32K-bit Sleepy SRAM.ER DOCUMENTA.T ITLE32K-bit SRAM: 128 rows, 256 columns, 8-bit words (3.3V operating voltage)B.G ENERAL D ESCRIPTIONThis is a 32,768 bit Static Random Access Memory (SRAM) organized by 4096 words by 8 bits. This memory has own input and output lines and has control signals, WRITE and PHI_b. SRAM fully operates in static mode. Therefore, no clock or refreshment is required.A<11:0> Address InputD_IN<7:0> Data InputD_OUT<7:0> Data OutputWRITE Write Command InputPHI_b Bit line Pre-charge Command Input[Table V-1] Pin Description[Figure V-1] 32K-bit SRAM Functional Block Diagram[Figure V-2] Read Cycle Timing Diagram[Figure V-3] Write Cycle Timing DiagramCell Standby Power Consumption 1.48E-3 mW Chip Area 450907 m2 Maximum Latency 9.567E-10 sec [Table V-2] Fundamental Parameters at Operational PointsVI.TESTINGTesting for 32K-bit SRAM flows along the functional blocks; address decoders, SRAM cell and multiplexers. For the decoders and multiplexers, performance testing is not required to measure leakage power reduction of SRAM, so only functional test was performed. For the functional test of decoders & multiplexers, we made a program that generates Verilog test bench for all the case; this test bench includes a task that performs test. Following is the excerpt from the test bench.reg [31:0] Calculated;task test;input [31:0] Measured, Calculated;beginif ( Measured != Calculated ) begin$display( "ERROR: Measured = %h, Calculated = %h",Measured, Calculated );endendendtaskinitial beginA[4:0] = 5'b0;#50; A = 7'h00;Calculated = 128'h00000001;#50; test( WL, Calculated );#50; A = 7'h01;Calculated = 128'h00000002;#50; test( WL, Calculated );#50; A = 7'h02;Calculated = 128'h00000004;#50; test( WL, Calculated );#50; A = 7'h03;Calculated = 128'h00000008;#50; test( WL, Calculated );#50; A = 7'h04;Calculated = 128'h00000010;#50; test( WL, Calculated );#50; A = 7'h05;Calculated = 128'h00000020;#50; test( WL, Calculated );#50; A = 7'h06;Calculated = 128'h00000040;[Excerpt of Verilog Test Bench for 5-to-32 Column Decoder]SRAM cell has four cases for its operation; read “1” or “0”, write “1” or “0” and all of these cases were tested thru Hspice simulator as following figure. Because SRAM cell requires a sort of tuned timing in input signals, each of PHI_b, WL, WRITE and DATA IN was set up to meet this requirement. And as transistor sizing critical in SRAM especially in 6T SRAM about noise issue, transistors were sized as discussed in the design documents.[Figure VI-1] SRAM Cell Hspice Simulation WaveformsModule Coverage Method/Tool 7-to-128 Row Decoder 100% (128 cases) Verilog-XL5-to-32 Column Decoder 100% (32 cases) Verilog-XLSRAM Cell 100% (4 cases) Hspice32-to-1 Multiplexer 100% (32 cases) Verilog-XL[Table VI-1] Testing Coverage MetricsVII. RESULT & OPTIMIZATIONLeakage power in this project was measured at the steady state when each SRAM cell holds logical “1” or “0”, which removes dynamic power and direct path power. And the result is,Leakage Power of Sleepy SRAM Cell = 5.810E-12 W Leakage Power of Non-Sleepy SRAM Cell = 8.452E-11 WThe leakage power of non-sleepy SRAM is 1454.73% larger than sleepy SRAM. To extend theanalysis further, we assumed four cases as following. One noticeable is sleepy partition is nearer to the output and non-sleepy is farther from the output. As stated before, this is for holding the same worst-case delay of 32K-bit SRAM. Additional area increase was estimated as 40% per sleepy SRAM cell; this is estimated by width of transistors as,40.1==""#$%%&'Cell SRAM Nonsleepy of Dimension Cell SRAM Sleepy of DimensionMode # Sleepy Cell# Non-Sleepy Cell100% Sleepy 32768 0 75% Sleepy 24576 8192 50% Sleepy 16384 16384 25% Sleepy 8192 24576 Non-Sleepy32768[Table VII-1] Sleepy SRAM Partition ModeMode Leakage Power Reduction RateArea Overhead100% Sleepy 1.90E-07 W 93.13% 40% 75% Sleepy 8.35E-07 W 69.84% 30% 50% Sleepy 1.48E-06 W 46.56% 20% 25% Sleepy 2.12E-06 W 23.28% 10% Non-Sleepy2.77E-06 W[Table VII-2] Leakage Power, Rate of Reduction & Area OverheadThe above table shows the leakage power, the rate of reduction and area overhead. If power reduction is the only factor then 100% sleepy mode seems to be the best choice, however delay and areaconstraints make different decision. For this purpose, delay of the SRAM cell at the critical positions should be simulated and the result is,Delay 127 Word Lines 255 Word Lines 128 Bit Lines 9.436E-10 sec 9.567E-10 sec 64 Bit Lines6.797E-10 sec6.957E-10 sec[Table VII-3] Delays of SRAM Cell at Critical PositionsThe simulation result exceeds the expected delay increase calculated data in sleep transistor sizing; however delays thru 64 bit lines are still shorter than 128 bit lines. Practically, memory latency for reading data is determined at the conditions where maximum delay occurs, so we can accept this delay penalty. The measured rate of delay penalty is,%3.3410222.5)10222.510957.6(,10061.5)10061.510797.6(max 101010101010=!!"#$$%&''('''('=)((((((penaltyof rate and we can estimate overall delay penalty. Average delay penalty assumes the cell accesses are uniformly distributed, the worst-case and the best-case delay each indicate delay thru the farthest cell and the nearest partition from the output. And RC delay along bit line is not a perfect linear but wire delay simulation shows the rate of curve is very small that it is assumed that RC delay tends to be linear.Mode Worst-Case ΔpenaltyAverage ΔpenaltyBest-Case Δpenalty100% Sleepy 34.3% 34.3% 34.3% 75% Sleepy 9.3% 25.7% 34.3% 50% Sleepy 0 17.1% 34.3% 25% Sleepy 0 8.57% 34.3% Non-Sleepy0.00%[Table VII-4] Sleepy Modes & Delay PenaltyNow, there is a decision change, 100% & 75% sleepy mode has large area overhead and increased worst-case delay meanwhile memory is a dimension critical device and slow compared with processing unit. Delay penalty rate also tells the maximum tolerance rate is 100-34.3=65.7% and if RC delay is distributed in linear fashion, maximum rate of sleepy SRAM partition becomes 65.7%. And 25% sleepy mode has not enough leakage power reduction as the whole system can tolerate ≈65.7% penalty. Therefore, taking all these factors into account gives 50~65.7% sleepy mode is the optimized for the project. If more than two threshold voltages are available, then the optimal partition is expected to change.VIII.REFERENCESN. Weste et al., “Principles of CMOS VLSI Design (3rd Ed. 2005)”, Addison-Wesley.K. Zhang, “SRAM Design on 65-nm CMOS Technology With Dynamic Sleep Transistor for Leakage Reduction (Apr., 2005)”, IEEE Journal of Solid-State Circuits Vol. 40, No. 4.V. Rayapati, “Interconnect Propagation Delay Modeling and Validation for the 16-MB CMOS SRAM Chip (Aug., 1996)”, IEEE Transactions on Components, Packaging, and ManufacturingTechnology Vol. 19, No. 3.R. Castagnetti et al., “A High-Performance SRAM Technology With Reduced Chip-Level Routing Congestion for SOC (Mar., 2005)”, Proceedings of the Sixth International Symposium onQuality Electronic Design (ISQED’05).M. Anis, “Design and Optimization of Multithreshold CMOS (MTCMOS) Circuits (Oct., 2003)”, IEEE Transaction on Computer Aided Design of Integrated Circuits and Systems, Vol. 22, No. 10. H. Zhou et al., “Adaptive Mode-Control: A Low-Leakage, Power-Efficient Cache Design”, Departmentof Electrical & Computer Engineering, North Carolina State University.M. Johnson, “Leakage Control With Efficient Use of Transistor Stacks in Single Threshold CMOS (Feb., 2002)”, IEEE Transactions on Very Large Scale Integrated (VLSI) Systems, Vol. 10, No. 1. B. Calhoun, et al., “A Leakage Reduction Methodology for Distributed MTCMOS (May, 2004)”, IEEEJournal of Solid-State Circuits, Vol. 39, No. 5.A. Ramalingam et al., “Sleep Transistor Sizing Using Timing Criticality and Temporal Currents (Jan.,2005)”, Proc. Asia South Pacific Design Automation Conference (ASPDAC).H. Qin et al., “SRAM Leakage Suppression by Minimizing Standby Supply Voltage”, Department ofEECS, University of California at Berkeley.IX.APPENDIXA.S CHEMATIC D IAGRAMS。