BCR2PM-12RE-A8中文资料

BCR12PM-12LGTriacMedium Power UseREJ03G1510-0100Rev.1.00Feb 14, 2007 Features• I T (RMS) : 12 A• V DRM : 600 V• I FGTI, I RGTI, I RGT III : 30 mA • V iso : 2000V • The Product guaranteed maximum junction temperature 150°C• Insulated Type• Planar Type• UL Recognized : Yellow Card No. E223904File No.E80271OutlineApplicationsSwitching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,electric tool, electric heater control, and other general purpose control applicationsVoltage classParameter Symbol12UnitRepetitive peak off-state voltage Note1V DRM 600 V Non-repetitive peak off-state voltage Note1V DSM 720 VParameter Symbol Ratings Unit ConditionsRMS on-state current I T (RMS) 12 A Commercial frequency, sine full wave360°conduction, Tc = 92°CSurge on-state current I TSM 120 A 60Hz sinewave 1 full cycle, peak value,non-repetitiveI 2t for fusion I 2t 60 A 2s Value corresponding to 1 cycle of halfwave 60Hz, surge on-state currentPeak gate power dissipation P GM 5 W Average gate power dissipation P G (AV) 0.5 W Peak gate voltage V GM 10 V Peak gate current I GM 2 A Junction Temperature Tj –40 to +150 °C Storage temperature Tstg –40 to +150 °C Mass — 2.0 g Typical value Isolation voltage V iso 2000 V Ta = 25°C, AC 1 minute,T 1 • T 2 • G terminal to caseNotes: 1. Gate open.Electrical CharacteristicsParameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM — — 2.0 mA Tj = 150°C, V DRM applied On-state voltage V TM — — 1.6 V Tc = 25°C, I TM = 20 A,instantaneous measurementΙV FGT Ι — — 1.5V ΙΙ V RGT Ι — — 1.5 V Gate trigger voltage Note2ΙΙΙ V RGT ΙΙΙ — — 1.5 VTj = 25°C, V D = 6 V, R L = 6 Ω,R G = 330 Ω Ι I FGT Ι — — 30 mA ΙΙ I RGT Ι — — 30 mAGate trigger curent Note2ΙΙΙI RGT ΙΙΙ — — 30 mATj = 25°C, V D = 6 V, R L = 6 Ω, R G = 330 Ω Gate non-trigger voltageV GD 0.2/0.1 — — V Tj = 125°C/150°C, V D = 1/2 V DRM Thermal resistanceR th (j-c) — — 4.0 °C/W Junction to case Note3 Critical-rate of rise of off-statecommutation voltageNote4(dv/dt)c 10/1 —— V/µs Tj = 125°C/150°CNotes: 2. Measurement using the gate trigger characteristics measurement circuit.3. The contact thermal resistance R th (j-c) in case of greasing is 0.5°C/W.4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.Performance CurvesPackage DimensionsOrder CodeLead form Standard packing Quantity Standard order code Standard order code exampleStraight type Vinyl sack 100Type name BCR12PM-12LG Lead form Plastic Magazine (Tube) 50Type name – Lead forming code BCR12PM-12LG-A8 Note : Please confirm the specification about the shipping in detail.Refer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。

目前开关电源大量使用于各种电器设备中，且开关电源直接接在市电电网上，电源设备与电网之间有着双向的电磁干扰影响，对于较高频率的开关电源在设计中都需要考虑电磁兼容问题。

用VIPER12A芯片设计的开关电源具有节能特性，而且电磁兼容性较强，外围电路也很简单。

芯片VIPER12A简介芯片VIPER12A是意法半导体有限公司于2002年出的单片小功率开关电源。

具有固定60kHz的开关频率，芯片的电源电压范围很宽(9V-38V)：具有电流控制型PWM调制器；具有滞后特性的欠压、过压、过流及过热保护功能等。

芯片外围电路很简单并具有节能特性。

由于VIPER12A内部的功率MOSFET管是一种特殊的“灵敏场效应管”如图1所示，有两个源极S1、S2，其中S1接外部参考地，S2用于电流检测，且IS1>>IS2，因此，能无损检测出漏极电流ID，从而达到节能。

而其他类型开关电源的漏极电流都是百分之百地通过检测电阻，这必然增加功耗，导致电源效率降低。

图2为系统整体框图，电网电源经过整流滤波后可得到峰值约为31OV的直流高压，同时还设有保护电路及抗电磁干扰电路，然后经过功率转化为+5V脉动直流电压，再经二次滤波后得到+5V恒压源。

为了适应不同电压和负载的变化，从输出回路取样反馈，通过开关集成器控制输入回路，从而得到+5V稳压输出。

本系统重点是电磁兼容(EMC)的设计。

电磁兼容(EMC)设计开关电源是较强的电磁干扰发射源。

这是因为开关电源的整流桥是非线性器件，其形成的电流是严重失真的正弦半波，含有丰富的高次谐波。

同时，功率开关管等半导体元件也会生产电磁干扰。

因此在设计中必须考虑电磁兼容性，主要抑制电磁干扰(EMI)和电磁脉冲(EMP)。

(1)抑制电磁干扰(EMI)电磁干扰(EMI)又叫噪声干扰，要抑制EMI关键是噪声滤波器的设计。

采用噪声滤波器能有效地抑制电网中的噪声进入设备，也可以抑制设备产生的噪声污染电网。

噪声有两种，一种是共模噪声，另一种是差模噪声。

Powerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272Triac12 Amperes/400-600 VoltsPowerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272BCR12CMTriac12 Amperes/400-600 VoltsAbsolute Maximum Ratings,T a= 25 °C unless otherwise specifiedRatings Symbol BCR12CM-8BCR12CM-12Units Repetitive Peak Off-state Voltage V DRM400600Volts Non-repetitive Peak Off-state Voltage V DSM500720Volts On-state Current, T c= 98°C I T(RMS)1212Amperes Non-repetitive Peak Surge, One Cycle (60 Hz)I TSM120120Amperes I2t for Fusing, t = 8.3 msec I2t6060A2sec Peak Gate Power Dissipation, 20 ␮sec P GM55Watts Average Gate Power Dissipation P G(avg)0.50.5Watts Peak Gate Current I GM22Amperes Peak Gate Voltage V GM1010Volts Storage Temperature T stg-40 to 125-40 to 125°C Operating Temperature T j-40 to 125-40 to 125°C Weight– 2.3 2.3GramsPowerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272BCR12CMTriac12 Amperes/400-600 VoltsElectrical and Thermal Characteristics,T j= 25 °C unless otherwise specifiedTest Conditions (Trigger Mode)BCR12CMCharacteristics Symbol V D R L R G T j Min.Typ.Max.Units Gate ParametersGTGTGD DRMPowerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272BCR12CMTriac12 Amperes/400-600 VoltsElectrical and Thermal Characteristics,T j= 25 °C unless otherwise specifiedCharacteristics Symbol Test Conditions Min.Typ.Max.Units Thermal Resistance, Junction-to-case R th(j-c)––– 1.8°C/W Voltage – Blocking State Miximums I DRM Gate Open Circuited––2mA Repetitive Off-state Current V D= V DRM, T j= 125°CCurrent – Conducting State Maximums V TM T c= 25°C, –– 1.6Volts Peak On-state Voltage I TM= 20ACritical Rate-of-rise of Commutating(dv/dt)c––––V/␮s Off-state Voltage (Commutating dv/dt)v for inductive load (L)(Switching)Commutatingdv/dt, (dv/dt)c Commutating Voltage &⌬Part V DRM(V/␮sec)Current WaveformNumber(Volts)Minimum Test Condition(Inductive Load)Powerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272BCR12CM Triac12 Amperes/400-600 Volts0.61.42.23.03.8MAXIMUM ON-STATE CHARACTERISTICS INSTANTANEOUS ON-STATE CURRENT, I T , (AMPERES)I N S T A N T A N E O U S O N -S T A T E V O L T A G E , V T , (V O L T S )10-1100101102TRANSIENT THERMALIMPEDANCE CHARACTERISTICSCYCLES AT 60 HzT R A N S I E N T T H E R M A L I M P E D A N C E , Z t h (j -c ), (°C /W A T T )10-110010110210-1102101100GATE CHARACTERISTICS(I, II, III)GATE CURRENT, I G , (mA)G A T E V O L T A G E , V G , (V O L T S )10210110310404080120160200MAXIMUM SURGE CURRENTFOLLOWING RATED LOAD CONDITIONSCYCLES AT 60 HzM A X I M U M P E A K S U R G E C U R R E N T , I T S M , (A M P E R E S )100101102020406080100120140160ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS), (AMPERES)C A S E T E M P E R A T U R E , T C , (°C )0426108121614ALLOWABLE AMBIENT TEMPERATUREVS. RMS ON-STATE CURRENTRMS ON-STATE CURRENT, I T(RMS), (AMPERES)A MB I E N T T E M P E R A T U R E , T a , (°C )042610812161420406080100120140160ALLOWABLE AMBIENT TEMPERATUREVS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT, I T(RMS), (AMPERES)A MB I E N T T E M P E R A T U R E , T a , (°C )0.80.4 1.2 2.01.6 2.4 3.22.8048121620242832MAXIMUM ON-STATE POWER DISSIPATIONRMS ON-STATE CURRENT, I T(RMS), (AMPERES)M A X I M U M P O W E R D I S S I P A T I O N , (W A T T S )426108121614GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE(TYPICAL)JUNCTION TEMPERATURE, T j , (°C)G A TE T R I G G E R C U R R E N T , (t °C )G A T E T R I G G E R C U R R E N T , (25°C )x 100%-60-202060100 140-4004080 120101102103Powerex,Inc.,200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (412) 925-7272BCR12CM Triac12 Amperes/400-600 VoltsGATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE(TYPICAL)JUNCTION TEMPERATURE, T j , (°C)G A T E T R I G G E R V O L T A G E , (t °C )G A T E T R I G G E R V O L T A G E , (25°C )x 100%-60-202060100 140-4004080 120101102103BREAKOVER VOLTAGE VS.RATE OF RISE OF OFF-STATE VOLTAGE(TYPICAL)RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/␮s)04080120160B R E A K O V E R V O L T A G E , (d v /d t = x V /␮s )B R E A K O V E R V O L T A G E , (d v /d t = 1V /␮s )x 100%102101103104REPETITIVE PEAK OFF-STATE CURRENTVS. JUNCTION TEMPERATURE(TYPICAL)JUNCTION TEMPERATURE, T j , (°C)-60-202060100 140-4004080 120102103104105R E P E T I T I V E P E A K O F F -S T A T E C U R R E N T , (t °C )R E P E T I T I V E P E A K O F F -S T A T E C U R R E N T , (25°C )x100%GATE TRIGGER CURRENTVS. GATE CURRENT PULSE WIDTH(TYPICAL)GATE CURRENT PULSE WIDTH, t w , (␮s)G A T E T R I G G E R C U R R E N T , (t w )G A T E T R I G G E R C U R R E N T , (D C )x 100%101102103100101102HOLDING CURRENTVS. JUNCTION TEMPERATURE(TYPICAL)JUNCTION TEMPERATURE, T j , (°C)H O L D I N G C U R R E N T , I H , (m A )-60-202060100 140-4004080 120101102103BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE(TYPICAL)JUNCTION TEMPERATURE, T j , (°C)-60-202060100 140-4004080 12004080120160B R E A K O V E R V O L T A G E , (t °C )B R E A K O V E R V O L T A G E , (25°C )x 100%COMMUTATION CHARACTERISTICS(TYPICAL)RATE OF DECAY OF ON-STATE COMMUTATING CURRENT, (A/ms)100101102103100101102103C R I T I C A L R A T E O F R I S E O F O F F -S T A T E C O M M U T A T I N G V O L T A G E , (V /␮s )GATE TRIGGER CHARACTERISTICSTEST CIRCUITSTEST PROCEDURE I TEST PROCEDURE IIGTEST PROCEDURE IIIG。

XRNP-12熔断器
插入式熔断器：它常用于380V及以下电压等级的线路末端，作为配电支线或电气设备的短路保护用。

螺旋式熔断器：熔体上的上端盖有一熔断指示器，一旦熔体熔断，指示器马上弹出，可透过瓷帽上的玻璃孔观察到，它常用于机床电气控制设备中。

螺旋式熔断器。

分断电流较大，可用于电压等级500V及其以下、电流等级200A以下的电路中，作短路保护。

封闭式熔断器：封闭式熔断器分有填料熔断器和无填料熔断器两种，如图3和图4所示。

有填料熔断器一般用方形瓷管，内装石英砂及熔体，分断能力强，用于电压等级500V以下、电流等级1KA以下的电路中。

无填料密闭式熔断器将熔体装入密闭式圆筒中，分断能力稍小，用于500V以下，600A以下电力网或配电设备中。

快速熔断器：快速熔断器主要用于半导体整流元件或整流装置的短路保护。

由于半导体元件的过载能力很低。

只能在极短时间内承受较大的过载电流，因此要求短路保护具有快速熔断的能力。

快速熔断器的结构和有填料封闭式熔断器基本相同，但熔体材料和形状不同，它是以银片冲制的有V形深槽的变截面熔体。

自复熔断器：采用金属钠作熔体，在常温下具有高电导率。

当电路发生短路故障时，短路电流产生高温使钠迅速汽化，汽态钠呈现高阻态，从而限制了短路电流。

当短路电流消失后，温度下降，金属钠恢复原来的良好导电性能。

自复熔断器只能限制短路电流，不能真正分断电路。

其优点是不必更换熔体，能重复使用。

出厂编号1505-777-8068-。

BCR30AM-12LBTriacMedium Power Use(The product guaranteed maximum junction temperature of 150°C)REJ03G0472-0300Rev.3.00Nov 30, 2007 Features• I T(RMS) : 30 A• V DRM : 600 V• I FGT I, I RGT I, I RGT III : 50 mA • Non-Insulated Type • Planar Passivation TypeOutlineApplicationsContactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/offcontrol of copier lampWarning1. Refer to the recommended circuit values around the triac before using.2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximumjunction temperature of 125°C will be supplied.Maximum RatingsVoltage classParameter Symbol12UnitRepetitive peak off-state voltage Note1V DRM 600 V Non-repetitive peak off-state voltage Note1V DSM 720 VParameter Symbol Ratings Unit ConditionsRMS on-state current I T(RMS) 30 A Commercial frequency, sine full wave,Tc = 100°CSurge on-state current I TSM 300 A 60Hz sinewave 1 full cycle, peak value,non-repetitiveI 2t for fusing I 2t 378 A 2s Value corresponding to 1 cycle of halfwave 60Hz, surge on-state currentPeak gate power dissipation P GM 5 W Average gate power dissipation P G(AV) 0.5 W Peak gate voltage V GM 10 V Peak gate current I GM 2 A Junction temperature Tj – 40 to +150 °C Storage temperature Tstg – 40 to +150 °C Mass — 4.8 g Typical value Notes: 1. Gate open.Electrical CharacteristicsParameter Symbol Min. Typ. Max. Unit Test conditionsRepetitive peak off-state current I DRM — — 3.0/5.0 mA Tj = 125°C/150°C, V DRM applied On-state voltage V TM — — 1.6 V Tc = 25°C, I TM = 45A ΙV FGT Ι— — 2.5 V ΙΙ V RGT Ι — — 2.5 VGate trigger voltage Note2ΙΙΙ V RGT ΙΙΙ — — 2.5 V Tj = 25°C, V D = 6 V, R L = 6 Ω,R G = 330 Ω Ι I FGT Ι — — 50 mA ΙΙ I RGT Ι — — 50 mA Gate trigger current Note2ΙΙΙI RGT ΙΙΙ — — 50 mATj = 25°C, V D = 6 V, R L = 6 Ω,R G = 330 Ω Gate non-trigger voltageV GD 0.2/0.1 — — V Tj = 125°C/150°C, V D = 1/2V DRM Thermal resistanceR th(j-c) — — 1.2 °C/W Junction to case Note3 Critical-rate of rise of off-statecommutating voltageNote4(dv/dt)c 20/2 —— V/µs Tj = 125°C/150°CNotes: 2. Measurement using the gate trigger characteristics measurement circuit.3. The contact thermal resistance R th (c-f) in case of greasing is 0.3°C/W.4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.Performance CurvesPackage DimensionsOrder CodeLead form Standard packing Quantity Standard order code Standard order code exampleStraight type Vinyl sack 20Type name BCR30AM-12LB Lead form Plastic Magazine (Tube) 30Type name – Lead forming code BCR30AM-12LB-A8 Note : Please confirm the specification about the shipping in detail.Refer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。