Ito Integral; Properties

ITO薄膜的微结构及其分形表征孙兆奇1，吕建国2，蔡琪1，曹春斌1，江锡顺1，宋学萍1（1. 安徽大学物理与材料科学学院，合肥 230039；2. 合肥师范学院物理与电子工程系，合肥 230061）摘 要：采用直流磁控溅射法制备氧化铟锡(ITO)薄膜，用XRD、TEM和分形理论测试和分析了不同退火时间ITO薄膜的微结构。

XRD分析表明：退火时间持续增加，薄膜的晶格常数先减小后略有增大，这是薄膜中Sn4+取代Sn2+导致晶格常数减小和压应力不断释放导致晶格常数增大共同作用的结果。

分形研究表明：分形维数随退火时间的延长先减小后增大，说明薄膜中平均晶粒尺寸先减小后增大，与XRD的研究结果一致。

关键词：无机非金属材料；微结构；分形；氧化铟锡(ITO)薄膜中图分类号：O484文献标识码：A 文章编号：1673－7180(2008)04－0273－5Microstructure and fractal characterization of ITO filmsSUN Zhaoqi1，LU Jianguo2，CAI Qi1，CAO Chunbin1，JIANG Xishun1，SONG Xueping1(1. School of Physics and Material Science, Anhui University, Hefei 230039；2. Department of Physics and Electronic Engineering, Hefei Teachers College, Hefei 230061)Abstract: Indium Tin Oxide (ITO) films, deposited by DC magnetron sputtering, were annealed at 300℃ for different time. Microstructure and morphology of the ITO films are characterized by XRD, TEM and fractal. As the annealing time increasing, the effect of Sn4+ replaceing Sn2+ combined with releasing compression stress induces the lattice constant decrease at first, and increase later. The fractal dimension decreases at first and increased later, revealing that the mean grain size varies with the same way as fractal dimension.Key words: inorganic non-metallic meterial；microstructure；fractal；indium tin oxide (ITO) films氧化铟锡(ITO)薄膜具有可见光的高透过率(>80%)、红外的高反射率、低电阻率(10-3~10-4 Ω·cm)和较宽的能隙(3.6~3.9 eV)等优良的光电特性，是一种性能优异的宽禁带半导体功能薄膜，被广泛地应用于太阳能电池[1]、平板显示器[2]、液晶显示器[3~4]、电致变色显示器、高层建筑物玻璃窗等光电子器件。

伊藤对数微分公式积规则The Ito's lemma is a fundamental concept in stochastic calculus that allows us to calculate the derivative of a stochastic process. It is essential in financial mathematics and plays a vital role in modeling the dynamics of financial assets. 伊藤对数微分公式是随机微分方程中的一个基本概念，可以帮助我们计算随机过程的导数。

它在金融数学中至关重要，对于建模金融资产的动态具有重要作用。

When dealing with stochastic processes, the Ito's lemma provides a way to compute the derivative with respect to time and the underlying Brownian motion. It is particularly useful in situations where the dynamics of the process are influenced by random noise. 当处理随机过程时，伊藤对数微分公式提供了一种计算随时间和基础布朗运动的导数的方法。

在过程的动态受随机噪声影响的情况下，它特别有用。

The Ito's lemma follows a specific rule when dealing with products of stochastic processes. This rule is known as the product rule or the chain rule for stochastic calculus. It allows us to calculate the derivative of the product of two stochastic processes by considering the individual derivatives and their interactions. 当处理随机过程的乘积时，伊藤对数微分公式遵循特定的规则。

StochasticStochastic is a term commonly used in mathematics, statistics, and finance to describe processes or events that involve randomness or uncertainty. The word “stochastic” is derived from the Greek word “stokhastikos,” meaning “able to guess.”Introduction to StochasticStochastic refers to a system or process that involves random variables and probabilities. Unlike deterministic systems, where the outcome is entirely predictable and certain, stochastic systems incorporate randomness. These systems can be found in various fields such as physics, biology, economics, and computer science.Stochastic ProcessesA stochastic process is a mathematical model that describes theevolution of a system over time. It consists of a collection of random variables indexed by time or another parameter. Each random variable represents the state of the system at a specific time.There are two main types of stochastic processes: discrete-time and continuous-time processes. In discrete-time processes, the state variables change at discrete points in time, while in continuous-time processes, they change continuously over time.Examples of stochastic processes include Brownian motion, Poisson process, Markov chains, and Gaussian processes. These models are widely used to analyze and predict various phenomena such as stock prices, population growth, and particle movement.Stochastic CalculusStochastic calculus is a branch of mathematics that deals with calculus operations on stochastic processes. It provides tools for analyzing the behavior of stochastic models and making predictions based onprobabilistic methods.The two fundamental concepts in stochastic calculus are the Ito integral and Ito’s lemma. The Ito integral extends the concept of Riemann integration to incorporate randomness. It allows us to calculateintegrals with respect to stochastic processes.Ito’s lemma is a formula that relates a function of a stochasticprocess to its differential form. It enables us to derive differential equations involving random variables and solve them using probabilistic methods.Stochastic calculus has applications in various fields, including finance, physics, and engineering. It is widely used in option pricing, portfolio optimization, risk management, and modeling complex systems.Stochastic SimulationStochastic simulation is a technique used to model and analyze systems that involve randomness. It involves generating random variables according to specified probability distributions and using them to simulate the behavior of the system over time.Monte Carlo simulation is a popular stochastic simulation method. It involves running multiple simulations with different sets of random inputs to estimate the distribution of possible outcomes. This technique is widely used in finance, engineering, and scientific research.Stochastic simulation allows us to study the behavior of complex systems that are difficult to analyze analytically. By incorporating randomness into the models, we can capture the inherent uncertainties and make informed decisions based on probabilistic results.Applications of Stochastic ModelsStochastic models find applications in various fields due to theirability to capture randomness and uncertainty. Some common applications include:•Finance: Stochastic models are extensively used in option pricing, risk management, portfolio optimization, and financial forecasting.They help investors and financial institutions make informeddecisions by considering the probabilistic nature of financialmarkets.•Biology: Stochastic models are used to study population dynamics,genetic evolution, epidemiology, and ecological systems. Theyallow scientists to understand how random events affect thebehavior and evolution of biological systems.•Engineering: Stochastic models are employed in reliability analysis, queuing theory, inventory management, and supply chainoptimization. They help engineers design robust systems that canwithstand uncertainties and variations in input parameters.•Computer Science: Stochastic models play a crucial role incomputer simulations, machine learning algorithms, optimizationtechniques, and network analysis. They enable computer scientists to understand complex systems and develop efficient algorithms.ConclusionIn conclusion, stochastic processes provide a powerful framework for modeling and analyzing systems that involve randomness or uncertainty. By incorporating probabilistic methods into mathematical models, we can gain insights into the behavior of complex systems and make informed decisions based on the inherent uncertainties.Stochastic calculus and stochastic simulation techniques further enhance our ability to analyze and predict the behavior of stochastic models. These tools find applications in various fields, including finance, biology, engineering, and computer science.By understanding stochastic processes and utilizing stochastic models, we can better navigate the inherent randomness in our world and make more informed decisions in an uncertain environment.。

TFT制程中高厚度ITO残留因素的研究王灿;陈宁;刘英伟;赵磊;薛大鹏;杜建华;郭炜;王路【摘要】氧化铟锡(ITO)是薄膜晶体管工艺中最常用的透明导电薄膜,随着OLED 技术的发展,ITO作为透明阳极材料也被广泛应用.在高厚度(尤其是大于70 nm)非晶ITO工艺过程中,由于多种因素的影响,很容易产生残留,发生残留后会严重影响产品质量和项目进度.本文通过多次实验测试,综合多种不同厚度,尤其是针对高厚度非晶ITO,分析了TFT制程中影响残留的多种因素,考察重点因素及影响规律,有效地修正工艺条件,为之后的项目和生产过程提供了很好的参考价值.【期刊名称】《液晶与显示》【年(卷),期】2016(031)003【总页数】7页(P276-282)【关键词】薄膜晶体管;非晶氧化铟锡;残留;成膜;刻蚀【作者】王灿;陈宁;刘英伟;赵磊;薛大鹏;杜建华;郭炜;王路【作者单位】京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176;京东方科技集团股份有限公司,北京100176【正文语种】中文【中图分类】TN141.9氧化铟锡(Indium Tin Oxide，简称 ITO)薄膜是宽禁带半导体材料[1]，具有高电导率和可见光范围的高透射率，被广泛应用到光电器件中[2]。

ITO薄膜的制备方法有很多，如喷涂、蒸发、射频溅射和磁控溅射等。

随着显示技术的高精细化和大型化的发展，磁控溅射法备受欢迎[3-5]。

在TFT器件制作工艺中[6]，ITO工艺顺序为“薄膜沉积—图形化曝光—刻蚀—剥离”，最终形成所需的图形。

ITO根据结晶的状况可以分为非晶ITO(a-ITO)与多晶ITO(poly-ITO)[7-10]。

The property of encapsulation using thin film multi layerfor application to organic light emitting device qKyong Min Kim *,Byung Jo Jang,Whang Sin Cho,Sung Hoo JuR&D Center,ELiA Tech Co.Ltd.,1355-26,Elia Building,Seocho-Dong,Seocho-Gu,Seoul 137-070,South KoreaReceived 30August 2003;accepted 23December 2003Available online 16April 2004AbstractWe have developed a thin film multi layer as encapsulation method for OLED.The characteristics of the OLED encapsulated with thin film multi layer showed the similar OLED with metal cap encapsulation.The I–V–L test of OLED panels with thin film multi layer showed that the brightness is 1000cd/m 2with the efficiency of 7.6lm/W at the 7V and it took more than 2000h for the brightness to fall from 1000to 500cd/m 2.This result shows that the device with thin film multi layer has similar level of brightness and efficiency and more than 95%of lifetime compared to device with metal can encapsulation.Thus,we can confirm that thin film multi layer has an effect as encapsulation process to protect organic light emitting device.Also,thin film multi layer for the pro-tection of organic light emitting device simplifies passivation process,makes less than 0.8mm thick device and is also applicable to wide and flexible display.Ó2004Published by Elsevier B.V.PACS:68;07;73;81Keywords:OLED;Thin film passivation;Shrinkage1.IntroductionAs next generation display,organic light emitting device has great performances such as high brightness,fast response time,wide view angle,thin thickness and low power consumption,so many companies and labo-ratory have been doing research and development in this area.Currently,it is commercialized and equipped in mobile phone and car audio [1].Although its manufac-turing process and structure are quite simple,it is very sensitive to moisture and oxygen which causes emission area decrease and dark spot when it is exposed to the air.In order to prevent these defects,normally,glass or metal cap have been used in the encapsulation process.How-ever,this method cause heavy and expensive device.Especially,when it comes to wide or flexible display,glass or metal cap has its limits of application.In order to overcome these problems,research and development activities for thin film encapsulation process are very popular globally [2].The proposed structure is composed of organic material protection layer (OMPL),planari-zation layer (PL),permeation barrier layer (PBL)and impact protection layer (IPL).So,this paper deals with the performance,shrinkage,luminance and efficiency comparison between device with metal can and device (device/OMPL/PL/PBL and IPL)with thin film passiv-ation layer using inorganic material and polymer [3].2.ExperimentalITO glass having 10X =Ãsurface resistance is used for OLED.Insulator and separator were patterned using photo and wet etching anic layers formed in the order of HIL/HTL/EML/ETL/buffer and Al is used for cathode.In order to make passivation thin film layer to prevent device from damaging by moisture and oxygen,we used PECVD method to deposit inor-ganic materials and also used screen printer for polymer.qOriginal version presented at the 4th International Conference on Electroluminescence of Molecular Materials and Related Phenomena (ICEL4),27–30August 2003,Cheju Island,Korea.*Corresponding author.Tel.:+82-23-01-98-735;fax:+82-23-01-98-800.E-mail address:kkm4330@ (K.M.Kim).1567-1739/$-see front matter Ó2004Published by Elsevier B.V.doi:10.1016/j.cap.2003.11.081Current Applied Physics 5(2005)64–66/locate/capWe used polymer to make the polymer layer using screen printing method and exposed to UV to harden the layer for protection.On the planarization polymer layer,we deposited PBL using PECVD [4,5].In order to measure device shrinkage and luminance in thin film multi layer patterned device,we used TDI instrument and Minolta luminance cs-1000.Also we used Ag 100channel S/W and test jig for lifetime measurement.The device size was 1.94in.and pixel pitch was 80·240l m.The structure of thin film passivation is shown in Fig.1.3.Results and discussionFig.2shows the shrinkage difference between with and without inorganic.The device with only planariza-tion polymer layer (Fig.2(a)),without OMPL,has much more shrinkage device after 10h than the device with OMPL and PL (Fig.2(b)).In case of Fig.2(a),We see some damages of organic materials by outgas from polymer when exposed to UV to harden the layer.Figs.3and 4show the shrinkage of the device with PBL after 500h.There is no shrinkage on the initial device (Fig.3(a))caused by moisture or oxygen yet,but,after 500h under the conditions of constant temperature (65°C)and moisture (99%RH),there is lot of shrinkage on the device (Fig.3(b)).This proves that the mono inorganic layer cannot perfectly protect the device from moisture.Still,the device with 1st inorganic layer (1st IOL)and 2nd inorganic layer (2nd IOL)does not have much of shrinkage after 500h (Fig.4(a),(b)).We could get this improvement of package property to protect the device exposed to oxygen under high temperature by using the semiconductor materials for 2nd inorganic layer.Figs.5and 6are about the life time profile and effi-ciency of both devices with metal can and thin film multi layer consisted of device/OMPL/polymer layer/1st IOL/2nd IOL/polymer layer.Fig.5shows the descending rate of luminance with operation time of thin film passivation device,it shows less effectiveness until 400h than the device with can sealing,but,after 500h,the descending rate decreased.This is because when it is to remain particle in organic material and to lack dopant rateinFig.1.Structure of thin film passivation layer on passive matrix typeOLED.Fig.2.Shrinkage ratio of device (a)without OMPL/polymer layer and (b)with OMPL/polymerlayer.Fig.3.Shrinkage ratio of device/OMPL/polymer layer/1st IOL/poly-mer layer,(a)0h and (b)after 500h.Fig.4.Shrinkage ratio of device/OMPL/polymer layer/1st IOL/2nd IOL/polymer layer,(a)0h and (b)after 500h.K.M.Kim et al./Current Applied Physics 5(2005)64–6665emitting layer.Fig.6shows the efficiency of both the devices with metal can and thin film multi layer.In the result,both devices with thin film passivation and can sealing have similar level of efficiency.Table 1has device specification using thin film and metal can.They have similar level of efficiency,but thedevice with thin film has 50%thinner and 45.4%lighter than the one with the metal can.Fig.7compares monochrome,384·160resolution panel device covered with thin film multi layer and the same device with metal can.Fig.8is monochrome de-vice with thin film passivation in Fig.7.4.ConclusionsFrom this test and experiment,we developed more economic and effective packing process,which is thin film multi layer passivation to optimize OLED packing condition and applicable to flexible and wide display using polymer layer,inorganic layer and metal layer on device,than metal can encapsulated device.Further-more,it is possible to find several ways to improve efficiency using various materials to evaporate.References[1]C.W.Tang,S.A.Vanslyke,Appl.Phys.Lett.51(1987)912.[2]G.Gu,P.E.Burrows,S.Venkatesh,S.R.Forrest,Opt.Lett.22(1997)172.[3]L.Pawlowski,The Science and Engineering of Thermal SprayCoatings,John Wiley &Sons Ltd,1995.[4]H.Kubota,S.Miyaguchi,S.Ishizuka,T.Wakimoto,J.Funaki,Y.Fukuda,T.Watanabe,I.Oshita,T.Thoma,J.Lumin.87–89(2000)56.[5]A.S.da S.Sobrinho,treche,Czeremuszkin,J.E.Klemberg-Sapieha,M.R.Wertheimer,J.Vac.Sci.Technol.A 16(6)(1998)3190.Fig.5.Luminance vs.time of unit device with thin film passivation and cansealing.Fig.6.Efficiency vs.voltage of unit device with thin film passivation and can sealing.Table 1Specification of the 128DeviceThin film multi layerMetal canSize1.94in.Resolution 384·160Pixel pitch 80·240l m Supply voltage DC 7V Efficiency 7.6lm/w 8.1lm/w Total device 0.81.6thickness(Glass:0.7)(Glass:0.7)Weight (except IC)4.05g7.42gFig.7.Device picture of (a)metal can and (b)thin filmpassivation.Fig.8.Eliatech monochrome display with thin film passivation.66K.M.Kim et al./Current Applied Physics 5(2005)64–66。

ITO-Pattern 的设计ITO-Pattern 的设计受芯片影响，目前业界常规的Diamond 设计，没有专利问题，也是大部分IC 厂家采用的图案，由于Diamond 图案程式编写简单，易于作图，被广泛采用，但是由于Diamond 图案设计也有自身的缺点，许多大型芯片公司开始研发属于自己的ITO-pattern，如Apple，Atmel，Cypress。

目前比较优秀的单层结构的ITO-pattern 是矩形结构，其参考Apple 的图案为圆形，各个芯片公司进行部分修改以避免专利。

A Dimond 设计注意事项：1. 以VA 区来分配X、Y，按照默认标准Diamond 尺寸5mmX5mm来设计。

2. VA 区外扩0.5mm 为TP 之AA 区，，需要将边缘半个Diamond衍生出去，以尽免边缘效应。

3. 上线2 在FPC 压合边留ITO 薄膜做T 字型静电屏蔽，上线1在两翼做n 字型防护罩。

4. FPC 压合位置银胶PAD 位置如可能，尽量留ITO 薄膜，以保证FPC peeling strength 可以满足500g/cm。

B．矩形设计矩形设计是目前主流的，比较先进的ITO-pattern 设计方式，因其在Bottom-layer 的ITO 几乎是整面的，而且互容式的感应方式将Bottom-layer 作为发射极，其适时发送出固定频率的信号，几乎对外接信号形成屏蔽，因此互容式矩形pattern 的方案，其下层发射极形成了工作层兼屏蔽层的功能。

而上线路就是接收，适时接收整个工作区的信号，一旦某个点的平衡被打破，那么芯片就可以检测这个点的位置。

注意事项：1.以VA 区来分配X、Y，按照默认标准pitch 尺寸5mmX5mm来设计。

2.VA 区外扩0.5mm 为TP 之AA 区，需要将边缘ITO-pattern衍生出去，以尽量避免边缘效应。

3.上线2 在FPC 压合边留ITO 薄膜做T字型静电屏蔽，上线1在两翼做n 字型防护罩。

西北工业大学硕士学位论文低红外发射率聚乙烯功能材料的研究姓名：***申请学位级别：硕士专业：材料加工工程指导教师：***20070301西北Ｔ业大学Ｔ学硕十学付论文结果与讨论图３—１不同聚合物的发射率曲线ＰＰ及ＨＤＰＥ由于高的结晶度和少、短的支链结构，也具有相对较低的发射率。

ＬＬＤＰＥ分子链较为规整，支链短且少，相对于支链较多、分子链结构不够规整的ＬＤＰＥ也具有较低的发射率。

这些大分子链结构上的区别是影响发射率变化的根本原因。

但是聚四氟乙烯加工性能很差且成本很高，聚丙烯光、热老化性能很差，均不利于作为长期户外使用的热红外伪装材料的最终应用。

因此，本文最终选用聚乙烯作为低发射率材料的研究对象。

３．２颜料对发射率的影响本文研究的材料主要是应用于山林地区的背景中作为伪装材料使用，试验所选用的颜料为总后建工所多年来研制的军用绿色无机粉体颜料，该颜料的光谱反射曲线几乎与绿色植物达到了“同色同谱”的程度，且能顺利通过美军军标ＭＩＬ．Ｃ．４６１６８０（ＭＥ）绿色光谱反射限定通道【帅】，见图３－２。

同时无机颜料又具有耐侯性好和伪装寿命长的特点。

在此次研究中，同时用到了金属颜料（ＡＬ粉），目的是用来进一步降低体系的发射率。

以下是颜料对体系发射率影响的分析结果。

两北Ｔ业大学Ｔ学硕士学侍论文结果与讨论图３－３颜料的粒径分布曲线表３～１觑料粒径与红外发射率的关系从表３—１可以看出：随着颜料粉体粒径的减小，在８／ａｍ～１４９ｉｎ波段的红外发射率也随着降低。

根据红外辐射理论ｆ４舢，朝颜料粉体内漫射的红外辐射，将受到两个因素的影响而衰减：①在颜料粉体内被吸收；②被分布在颜料粉体内的散射粒子所散射。

当颜料内球状粒子的散射比较大，吸收比较小时，整个系统的红外辐射（红外辐射流）发生弥散和改变方向。

而根据Ｋｉｒｅｈｈｏ腚律，吸收小的材料，其发射率也比较ｄ，ｔ４５１。

由红外公式Ｈ６１得：，，（们＝胛２ＭＳ（Ａ，）（３—１）在（３．１）式中：ｒ（Ａ）为散射系数；ｒ为粒子半径；Ｍ为散射粒子浓度；ｓ（Ａ）为散射平均总截面积。

本色导电氧化工艺流程英文回答：The process of conductive oxide coating is a crucial step in many industries, especially in electronics and energy storage. It involves applying a thin layer of conductive oxide material onto a substrate to enhance its electrical conductivity. In this response, I will explain the basic steps involved in the conductive oxide coating process and provide examples to illustrate each step.The first step in the process is substrate preparation. This involves cleaning the substrate surface to remove any contaminants that may interfere with the adhesion of the conductive oxide material. Various cleaning methods can be used, such as chemical cleaning or plasma cleaning. For example, in the manufacturing of solar cells, the substrate (usually made of glass) is cleaned using a mixture of acids to remove impurities.Once the substrate is clean, the next step is the deposition of the conductive oxide material. There are several methods available for this, including physical vapor deposition (PVD), chemical vapor deposition (CVD), and spray pyrolysis. PVD involves evaporating the conductive oxide material in a vacuum chamber and allowing it to condense onto the substrate. CVD, on the other hand, involves the reaction of precursor gases to deposit the conductive oxide material. For instance, in the production of transparent conductive coatings for touchscreens, indium tin oxide (ITO) is commonly deposited using PVD techniques.After the conductive oxide material is deposited, the next step is annealing. This is a heat treatment process that helps to improve the conductivity and adhesion of the coating. The substrate is heated to a specific temperature and held for a certain period of time to allow for the rearrangement of atoms and the removal of any defects in the coating. Annealing can be done in various atmospheres, such as air or inert gases. In the case of ITO coatings, annealing is typically performed in a reducing atmosphere to enhance the electrical properties.Finally, the last step in the process is post-treatment. This step involves additional processes to further enhance the properties of the conductive oxide coating. For example, in the case of solar cells, a transparent conductive oxide coating is often subjected to a texturing process to increase light trapping efficiency. This can be done by etching the surface of the coating to create a roughtexture that scatters light.中文回答：导电氧化物涂层工艺是许多行业中的关键步骤，特别是在电子和储能领域。

三氧化二铝含量对铁/氧化铝复合材料复介电常数的影响Effect of A l2O3Concentration upon Com plexPermittivity of Fe/A l2O3Composites曾国勋,张海燕,胡礼初,陈易明(广东工业大学材料与能源学院,广州510006)ZENG Guo-x un,ZHANG H ai-y an,H U Li-chu,CH EN Yi-ming(Faculty of M ate rial&Ene rg y,Guangdo ngUniver sity of Technology,Guang zhou510006,China)摘要:采用柠檬酸硝酸盐法制备含不同氧化铝含量的铁氧体,并用氢还原该铁氧体得到含不同氧化铝量的超细与纳米粉混合的铁粉。

粉末颗粒外形呈针状和片状。

铁/氧化铝复合材料的复介电常数实部随氧化铝含量增加,而逐渐下降。

介电常数损耗随氧化铝含量增加,而逐渐下降,且损耗峰逐渐向高频移动。

通过加入铁中的氧化铝含量可以调节铁的复介电常数。

关键词:A l2O3;Fe;复合材料;复介电常数中图分类号:TB34 文献标识码:A 文章编号:1001-4381(2007)03-0007-03A bstract:The sheets of ferrite composites w ith different co ncentratio n of Al2O3w ere synthesized by citric nitrate so l gel method.The mix ture po w ders have the fine and nano Fe/Al2O3composites w ere obtained,in w hich the ferrite w as reduced by hy drog en.I t is found that Fe/Al2O3composites have a shape o f needle and flake by SEM examinatio n.The real and imaginary parts of the com plex permit-tivity o f Fe/Al2O3composites decreased,and dielectric lo ss(ε″)peak shifted to hig her frequency w ith the increase o f Al2O3concentration in Fe/Al2O3composites.Relative permittivity of Fe po w ders is adjusted by adding different A l2O3concentration.Key words:A l2O3;Fe;com po sites;com plex permittivity 近些年,由于民用电磁产品运用的日益普及,电磁干扰问题日益严重。

第32卷　第2期2009年4月电子器件Chinese J ournal Of Elect ron DevicesVol.32　No.2Ap r.2009Microstru ctu re and Optoelectrical P erform ance of IT O Film by DC M agnetron SputteringGU I T ai 2long3,W A N G Gang ,Z H A N G X i u 2f ang ,L I A N G Dong(A p plied S cience College ,H arbin Univ.S ci.Tech.,Harbin 150080,China )Abstract :By direct current magnet ron met hod using indium oxide target (ITO ,In 2O 3:SnO 2=90:10,wt %),highly t ransparent and co nductive ITO could be successf ully on glass subst rate at 100℃.The crys 2tal st ruct ure and surface shape of t he film are analyzed by XRD ,SEM and A FM.The light t ransmittance and resistance are measured by W GD 23and ZS 282.St udy splash power to t he t hin film deeply t he influence of t he light rate.The result manifest t hat t he resistance declines along wit h t he increment of t he splash power.The light t ransmittance is obviously improved after annealing.To t he p urple light dist rict of t he 360nm -380nm ,t he light t ransmittance attains lowest.To t he red light dist rict of t he 760nm -800nm ,t he light t ransmittance attains highest.K ey w ords :indium tin oxide (ITO );t hin film ;DC magnet ron sp uttering ;t ransmissivity ;microst ruct ure ;op 2toelect rical performance EEACC :4250;0520磁控溅射法制备ITO 薄膜的结构及光电性能桂太龙3,汪　钢,张秀芳,梁　栋(哈尔滨理工大学应用科学学院,哈尔滨150080)收稿日期:2008211217基金项目:黑龙江省自然科技基金资助(E200809);黑龙江省教育厅科技项目资助(11511091)作者简介:桂太龙(19522),男,教授,从事光电功能材料与器件的研究,guitl1952@ ;汪　钢(19832),男,哈尔滨理工大学微电子专业硕士摘　要:本文采用直流磁控溅射法在基板温度100℃、100%Ar 气氛中制备了光电性能优良的铟锡氧化物(In 2O 3:SnO 2=90:10,质量百分比)薄膜。

溅射时间对磁控溅射V2O5离子储存薄膜结构与性能的影响付亚东1刘鉴宁2刘红英彳张远洋彳张得全1梁小平彳（1.天津耀皮工程玻璃有限公司天津300409；2.天津工业大学材料科学与工程学院天津300387）摘要在ITO玻璃基体上采用磁控溅射法制备用于电致变色玻璃的V2O5离子储存薄膜，重点研究了溅射时间（2〜5h）对v205薄膜结构与性能的影响。

研究结果表明：随着溅射时间延长，V2O5薄膜的厚度随着溅射时间延长而增厚，透过率随着厚度增加而呈现降低趋势；溅射4〜5h下制备的V2O5薄膜离子储量高于20mC/crn2。

综合考虑离子储存量和可见光透过率，磁控溅射法制备离子储存V2O5薄膜的溅射时间控制为4h为宜。

关键词磁控溅射，离子储存薄膜，V2O5，溅射时间，透过率中图分类号：0646文献标识码：A文章编号：1003-1987（2021）04-0021-05Effects of Sputtering Time on the Structure and Propertiesof V2O5Ion Storage Film Prepared by Magnetron SputteringFU Yadong1,LIU Jianning2,LIU Hongying2,ZHANG Yuanyang2,ZHANG Dequan1,LIANG Xiaoping2(1.Tianjin SYP Engineering Glass Co.,Ltd.,Tianjin300409,China；2.School ofMaterials Science and Engineering,Tiangong University,Tianjin300387,China) Abstract:V2O5ion storage films were prapared by magnetron sputtering on ITO glass substrate,and the effect of sputtering time(2-5h)on the structure and properties film was mainly studied.The results show that with the increase of sputtering time,the thickness of the film is increased,meanwhile,the average transmittance is decreased.The ion storage capacity of V2O5films excess20mC/cm2when the sputtering time is4h or5h.Taking into account the ion storage and visible light transmittance,the sputtering time of ion storage V2O5films by magnetron sputtering is controlled to4h.Key Words:magnetron sputtering,ion storage film,V2O5,sputtering time,transmittance0引言随着中国经济的发展，能耗和环保两大问题引起了人们的重视⑴。