NTR1P02LT1Power MOSFET
?20 V, ?1.3 A, P ?Channel SOT ?23 Package
These miniature surface mount MOSFETs low R DS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC ?DC converters and power management in portable and battery ?powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.
Features
?Low R DS(on) Provides Higher Efficiency and Extends Battery Life ?Miniature SOT ?23 Surface Mount Package Saves Board Space ?Pb ?Free Packages are Available
MAXIMUM RATINGS (T J = 25°C unless otherwise noted)
Rating
Symbol Value Unit Drain ?to ?Source Voltage
V DSS ?20V Gate ?to ?Source Voltage ? Continuous V GS ±
12V
Drain Current
? Continuous @ T A = 25°C
? Pulsed Drain Current (t p ≤ 10 m s)I D
I DM ?1.3?4.0A A Total Power Dissipation @ T A = 25°C P D 400mW Operating and Storage Temperature Range T J , T stg ?55 to
150°C Thermal Resistance ? Junction ?to ?Ambient R q JA 300°C/W Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s)
T L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Device Package Shipping ?NTR1P02LT1SOT ?233000 Tape & Reel NTR1P02LT3SOT ?2310,000 Tape & Reel https://www.doczj.com/doc/f73947765.html,
?For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.
NTR1P02LT3G
SOT ?23(Pb ?Free)
10,000 Tape & Reel
NTR1P02LT1G SOT ?23(Pb ?Free)3000 Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 V, I D = ?10 m A)
V(BR)DSS?20V
Zero Gate Voltage Drain Current
(V DS = ?16 V, V GS = 0 V)
(V DS = ?16 V, V GS = 0 V, T J = 125°C)I DSS
?1.0
?10
m A
Gate?Body Leakage Current (V GS = ±12 V, V DS = 0 V)I GSS±100nA ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS, I D = ?250 m A)
V GS(th)?0.7?1.0?1.25V
Static Drain?to?Source On?Resistance (V GS = ?4.5 V, I D = ?0.75 A)
(V GS = ?2.5 V, I D = ?0.5 A)r DS(on)
0.135
0.190
0.22
0.35
W
DYNAMIC CHARACTERISTICS
Input Capacitance(V DS = ?5.0 V)C iss225pF Output Capacitance(V DS = ?5.0 V)C oss130
Transfer Capacitance(V DG = ?5.0 V)C rss55
SWITCHING CHARACTERISTICS (Note 2)
Turn?On Delay Time
(V DD = ?5.0V, I D = ?1.0 A,
R L = 5.0 W, R G = 6.0 W)t d(on)7.0ns
Rise Time t r15
Turn?Off Delay Time t d(off)18
Fall Time t f20
Total Gate Charge(V DS = ?16V, I D = ?1.5 A,
V GS = ?4.0 V)
Q T5500pC SOURCE?DRAIN DIODE CHARACTERISTICS
Continuous Current I S?0.6A Pulsed Current I SM?0.75 Forward Voltage (Note 2) (V GS = 0 V, I S = ?0.6 A)V SD?1.0V
Reverse Recovery Time
(I S = ?1.0 A, V GS = 0 V,
dI S/dt = 100 A/m s)t rr16ns t a11
t b 5.5
Reverse Recovery Stored Charge Q RR0.0085m C
1.Pulse Test: Pulse Width ≤300 m s, Duty Cycle ≤ 2%.
2.Switching characteristics are independent of operating junction temperature.
?I D , D R A I N C U R R E N T (A M P S )
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )
T J , JUNCTION TEMPERATURE (°C)?V DS , DRAIN ?TO ?SOURCE VOLTAGE (VOLTS)
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
1.510.5Figure 5. On ?Resistance Variation with
Temperature Figure 6. Drain ?to ?Source Leakage Current
versus Voltage
2.50
2
GATE
C , C A P A C I T A N C E (p F )
T S )
R G , GATE RESISTANCE (W )
?V SD , SOURCE ?TO ?DRAIN VOLTAGE (VOLTS)
t , T I M E (n s )
100
1
Figure 9. Resistive Switching Time Variation
versus Gate Resistance Figure 10. Diode Forward Voltage versus
Current
10
PACKAGE DIMENSIONS
SOT?23 (TO?236)
CASE 318?08
ISSUE AN
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Array
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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