P-Channel Logic Level Enhancement Mode Field Effect Transistor

P06P03LVG

SOP-8

Lead-Free

NIKO-SEM

1

JUN-10-2004

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

V DS -30 V

Gate-Source Voltage V GS ±20 V T C = 25 °C -6 Continuous Drain Current T C = 70 °C

I D

-5

Pulsed Drain Current 1 I DM -30 A

T C = 25 °C 2.5 Power Dissipation

T C = 70 °C P D 1.3 W

Operating Junction & Storage Temperature Range T j , T stg

-55 to 150

°C THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL TYPICAL

MAXIMUM

UNITS Junction-to-Case

R θJ c

25 °C / W Junction-to-Ambient R θJA

50

°C / W

1Pulse width limited by maximum junction temperature.

2

Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = -250µA -30 Gate Threshold Voltage V GS(th) V DS = V GS , I D = -250µA -0.9 -1.5 -3 V

Gate-Body Leakage

I GSS V DS = 0V, V GS = ±20V ±100 nA V DS = -24V, V GS = 0V 1 Zero Gate Voltage Drain Current I DSS V DS = -20V, V GS = 0V, T J = 125 °C

10 µA On-State Drain Current 1 I D(ON) V DS = -5V, V GS = -10V -30 A V GS = -4.5V, I D =- 5A 60 75 Drain-Source On-State Resistance 1

10 µA On-State Drain Current 1 I D(ON) V DS = -5V, V GS = -10V -30 A V GS = -4.5V, I D =- 5A 60 75 Drain-Source On-State Resistance 1

R DS(ON) V GS = -10V, I D = -6A 37 45 m Ω Forward Transconductance 1

g fs

V DS = -10V, I D = -6A

16

S

4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE

PRODUCT SUMMARY

V (BR)DSS R DS(ON) I D -30

45m Ω

-6A

G

S

D

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