P06P03LVG中文资料

VOLTAGE RANGE 100 to 600 Volts LPRG351 THRU LPRG356CURRENT35.0 AmperesTECHNICAL SPECIFICATION ： FEATURES• Low Leakage• Low forward voltage drop • High current capability•High forward surge current capacityMECHANICAL DATA• Technology: Glass passivated chip with vacuum soldered • Case: Copper case• Polarity: As marked of case bottom• Lead: Plated lead , solderable per MIL-STD-202E method 208C• Mounting: Press Fit•Weight: 0.21 ounces, 6.01 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS• Ratings at 25℃ ambient temperature unless otherwise specified • Single Phase, half wave, 60HZ, resistive or inductive load •For capacitive load derate current by 20%SYMBOLS LPRG351 LPRG352 LPRG353 LPRG354 LPRG356 UNIT Maximum Repetitive Peak Reverse Voltage V RRM 100 200 300 400 600 Volts Maximum RMS Voltage V RMS 70 140 210 280 420 Volts Maximum DC Blocking VoltageV DC 100200300 400600Volts Maximum Average Forward Rectified Current, At Tc=105℃I (AV)35AmpsPeak Forward Surge Current3.3mS single half sine wave superimposed on Rated load (JEDEC method) I FSM 500 Amps Rating for fusing (t ＜8.3ms)I 2t 1038 A 2S Maximum instantaneous Forward Voltage at 100A V F 1.08 Volts 5.0 Maximum DC Reverse Current at Rated TA=25℃ DC Blocking Voltage TA=100℃ I R 450 UA Typical Thermal ResistanceR θJC 0.8 ℃/W Operating and Storage Temperature RangeT J ,T STG(-65 to +175)℃Notes:1. Enough heatsink must be considered in application.VOLTAGE RANGE 100 to 600 Volts LPRG351 THRU LPRG356CURRENT35.0 AmperesRATINGS AND CHARACTERISTIC CURVES LPRG351 THRULPRG356F1G.2 MAXIMUM NON-REPETITIVE PEAKFORWARD SURGE CURRENTF1G.1 TYPICAL FORWARD CURRENTDERATING GURVENUMBER OF CYCLES AT 60 Hz1006040201086421P E A K F O R W A R D S U R G E C U R R E N T ,(A )A V E R A G E F O R W A R D C U R R E N T ,(A )AMBIENT TEMPERATURE, ()℃12510015017575502500.11.0101000INSTANTANEOUS FORWARD VOLTAGE,(V)I N S T A N T A N E O U S F O R W A R D C U R R E N T ,(A )F1G.3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS80402050403020100604020A V E R A G E P O W E R D I S S I P A T I O N (W )AVERAGE FORWARD CURRENT, (A)F1G.4 FORWARD ROWER DISSIPATION3010。

Data Sheet No. PD60269Typical ConnectionProduct SummaryV OFFSET 200 V max.I O +/-130 mA/270 mA V OUT 10 V - 20 V t on/off (typ.)680 ns/150 nsDeadtime (typ.)520 nsHALF-BRIDGE DRIVERFeatures•Floating channel designed for bootstrap operation •Fully operational to +200 V•Tolerant to negative transient voltage, dV/dtimmune•Gate drive supply range from 10 V to 20 V •Undervoltage lockout•3.3 V, 5 V, and 15 V logic compatible •Cross-conduction prevention logic•Matched propagation delay for both channels •Internal set deadtime•High -side output in phase with HIN input •Low -side output out of phase with LIN input DescriptionThe IRS2003 is a high voltage, high speed power MOSFE T and IGBT drivers wi th dependent high - and low -side referenced output channels. Proprietary HVICand latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input iscompatible with standard CMOS or LSTTL output, downto 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high -side configuration which operates up to 200 V. 1IRS2003(S)PbFPackages8-Lead PDIP IRS20038-Lead SOIC IRS2003S • RoHS compliantIRS2003(S)PbFAbsolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Note 1: Logic operational for V S of -5 V to +200 V. Logic state held for V S of -5 V to -V BS . (Please refer to the Design Tip DT97-3 for more details).IRS2003(S)PbFStatic Electrical CharacteristicsV BIAS (V CC, V BS) = 15 V and T A = 25 °C unless otherwise specified. The V IN, V TH, and I IN parameters are referenced to COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Dynamic Electrical CharacteristicsV BIAS (V CC, V BS) = 15 V, C L = 1000 pF and T A = 25 °C unless otherwise specified.IRS2003(S)PbFLead DefinitionsSymbol DescriptionHIN Logic input for high -side gate driver output (HO), in phase Logic input for low-side gate driver output (LO), out of phase V B High -side floating supply HO High -side gate drive output V S High -side floating supply return V CC Low-side and logic fixed supply LO Low -side gate drive output COMLow -side returnLIN Lead Assignments8 Lead PDIP 8 Lead SOICIRS2003PbF IRS2003SPbF12348765V CC HIN LIN COMV B HO V S LO12348765V CC HIN LIN COMV B HO V S LOIRS2003(S)PbFLINHOLOHINFigure 3. Deadtime Waveform DefinitionsFigure 2. Switching Time Waveform DefinitionsLOIRS2003(S)PbFIRS2003(S)PbF8-50-250255075100125Temperature (oC)Figure 10A. Logic "0"(HIN) & Logic "1" ( )Input Voltage vs. TemperatureLINIRS2003(S)PbFIRS2003(S)PbFIRS2003(S)PbF10vs. Temperaturevs. VoltageFigure 17A. Logic "0" Input Bias Currentvs. TemperatureFigure 17B. Logic "0" Input Bias Currentvs. VoltageL o g i c “0” I n p u t B i a s C u r r e n t (µA )0123456-50-250255075100125Temperature (°C)F ig u r e 17A. L o g ic "0" I n p u t B ia s C u r r e n t 0123456101214161820Supply Voltage (V)Case OutlinesCTape & Reel 8-lead SOICPer SCOP 200-002The SOIC-8 is MSL 2 qualified.This product has been designed and qualified for the industrial level.Qualification standards can be found at Data and specifications subject to change without notice. 11/27/2006。

1998©Document No. D13533EJ3V0DS00 (3rd edition)Date Published April 2002 N CP(K)Printed in JapanTHYRISTORS3P4MH, 3P6MH3 A MOLD SCRDATA SHEET2002The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak off-voltages (and reverse voltages) are 400 V and 600 V.FEATURES•This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible.•Employs flame-retardant epoxy resin (UL94V-0).APPLICATIONSNoncontact switches of consumer electronic euipments,electric equipments, audio quipments, and light indutry equipementsPACKAGE DRAWING (UNIT: mm)ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)ParameterSymbol 3P4MH3P6MHRatings Unit Non-repetitive peak reverse voltage V RSM 500700V R GK = 1 k ΩNon-repetitive peak off-state voltage V DSM 500700V R GK = 1 k ΩRepetitive peak reverse voltage V RRM 400600V R GK = 1 k ΩRepetitive peak off-voltage V DRM 400600V R GK = 1 k ΩAverage on-state current I T(AV) 3 (Tc = 87°C, Single half-wave, θ = 180°)A Refer to Figure 11.Effective on-state current I T(RMS) 4.7A −Surge on-state currentI TSM65 (f = 50 Hz, Sine half-wave, 1 cycle)70 (f = 60 Hz, Sine half-wave, 1 cycle)A Refer to Figure 2.Fusing current∫ i t 2dt 20 (1 ms ≤t ≤10 ms)A 2s −Critical rate of rise of on-state current dI T /dt 50A/µs −Peak gate power dissipation P GM 2 (f ≥50 Hz, Duty ≤10%)W Refer to Figure 3.Average gate power dissipation P G(AV)0.2W Peak gate forward current I FGM 1 (f ≥50 Hz, Duty ≤10%)A −Peak gate reverse voltage V RGM 6V −Junction temperature T j −40 to +125°C −Storage temperatureT stg−55 tp +150°C−Electrode connection <1>Cathode <2>Anode <3>GateStandard weight: 1.4*TC test bench-markData Sheet D13533EJ3V0DS2ELECTRICAL CHARACTERISTICS (T j = 25°C, R GK = 1 k Ω)TYPICAL CHARACTERISTICS (Ta = 25°C)Data Sheet D13533EJ3V0DS34Data Sheet D13533EJ3V0DS[MEMO]Data Sheet D13533EJ3V0DS5M8E 00. 4The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots"Special":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)"Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)"NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2)"NEC semiconductor products" means any semiconductor product developed or manufactured by or forNEC (as defined above).••••••。

Product information is current as of publication date. The product conforms Copyright © 2006, 2007, Pletronics Inc.LV77D Series 3.3 VLVDS Clock Oscillators April 2007•Pletronics’ LV77D Series is a quartz crystalcontrolled precision square wave generator with an LVDS output.•The package is designed for high density surface mount designs.•Low cost mass produced oscillator.•Tape and Reel or cut tape packaging is available.• 5 x 7 mm LCC Ceramic Package •Enable/Disable Function on pad 1•Disable function includes low standby power mode •Low JitterPletronics Inc. certifies this device is in accordance with the RoHS 6/6 (2002/95/EC) and WEEE (2002/96/EC) directives.Pletronics Inc. guarantees the device does not contain the following:Cadmium, Hexavalent Chromium, Lead, Mercury, PBB’s, PBDE’s Weight of the Device: 0.16 gramsMoisture Sensitivity Level: 1 As defined in J-STD-020C Second Level Interconnect code: e4Absolute Maximum Ratings:ParameterUnitV CC Supply Voltage -0.5V to +5.0V Vi Input Voltage -0.5V to V CC + 0.5V Vo Output Voltage-0.5V to V CC + 0.5VThermal CharacteristicsThe maximum die or junction temperature is 155o CThe thermal resistance junction to board is 30 to 50o C/Watt depending on the solder pads, ground plane and construction of the PCB.April 2007Part Number:LV7745DEV-125.0M-XXPart Marking:PLE LV77FF.FFF M C YMDXX orLV7XYWWXX FF.FFF M C PLE XXXPackaging code or blank T250 = 250 per Tape and Reel T500 = 500 per Tape and Reel T1K = 1000 per Tape and Reel Frequency in MHz Supply Voltage V CC V = 3.3V +_ 10%Optional Enhanced OTRBlank = Temp. range -10 to +70o C E = Temp. range -40 to +85o C Series Model Frequency Stability 45 = +_ 50 ppm 44 = +_ 25 ppm 20 = +_ 20 ppm Series ModelMarking Legend:PLE = PletronicsFF.FFF M = Frequency in MHzYYWW or YWW or YMD = Date of Manufacture (year and week, or year-month-day)All other marking is internal factory codes Specifications such as frequency stability, supply voltage and operating temperature range, etc. arenot identified from the marking. External packaging labels and packing list will correctly identify the ordered Pletronics part number.Codes for Date Code YMDCode 6789012Year 2006200720082009201020112012Code A B C D E F G H J K L M Month JANFEBMARAPRMAY JUN JUL AUG SEP OCT NOV DEC Code 123456789A B C Day 123456789101112Code D E F G H J K L M N P R Day 131415161718192021222324Code T U V W X Y Z Day25262728293031April 2007Electrical Specification for 3.30V +_10% over the specified temperature range andthe frequency range of 1 to 250 MHzItemMin Max Unit ConditionFrequency Accuracy “45"-50+50ppmFor all supply voltages, load changes, aging for 1year, shock, vibration and temperatures“44"-25+25 “20"-20+20Output Waveform LVDS Output High Level -- 1.60Volts -See load circuit R1 = 50 ohmsOutput Low Level 0.90--Volts -Differential Output (V OD )250450mVolts -Output Offset Voltage (V OS ) 1.125 1.375Volts > 80 MHz 1.125 1.500Volts < 80 MHz Differential Output Error (dV OS )--50mVolts -Output Symmetry 4555%Referenced to 50% of amplitude or crossing point Output T RISE and T FALL 300700pS > 80 MHz Vth is 20% and 80% of waveform 400900pS < 80 MHzJitter-0.6pS RMSMeasured from 12KHz to 20MHz from Fnominal - 2.8Measured from 10Hz to 1MHz from Fnominal Vcc Supply Current-66mA > 80 MHz Includes current of properly terminated device-45mA < 80 MHzEnable/Disable Internal Pull-up 50-Kohm To Vcc (equivalent resistance)V disable -0.8Volts Referenced to Ground V enable2.0-Volts Referenced to Ground Output leakage V OUT = V CC -10+10uA Pad 1 low, device disabledV OUT = 0V -10+10uA Enable -10nS Time for output to reach a logic state Disable time -10nS Time for output to reach a high Z state Start up time-5mS > 80 MHz Measured from the time Vcc = 3.0V-3mS< 80 MHzOperating Temperature Range-10+70o C Standard Temperature Range-40+85o C Extended Temperature Range “E ” OptionStorage Temperature Range -55+125oCStandby Current I CC-3uA> 80 MHz Pad 1 low, device disabled- 1.5mA< 80 MHzSpecifications with Pad 1 E/D open circuitApril 2007-160-140-120-100-80-60-40-200101,000100,00010,000,000Frequency (Hz)d B c /HzTypical Phase-Noise ResponseLoad CircuitApril 2007Reliability:Environmental ComplianceParameter ConditionMechanical Shock MIL-STD-883 Method 2002, Condition BVibration MIL-STD-883 Method 2007, Condition ASolderability MIL-STD-883 Method 2003Thermal Shock MIL-STD-883 Method 1011, Condition AESD RatingModel Minimum Voltage ConditionsHuman Body Model1500MIL-STD-883 Method 3115Charged Device Model1000JESD 22-C101Package LabelingLabel is 1" x 2.6" (25.4mm x 66.7mm)Label is 1" x 2.6" (25.4mm x 66.7mm) Font is Courier New Font is ArialBar code is 39-Full ASCIIApril 2007Inches mm A 0.276 +_0.0067.00 +_0.15B 0.197 +_0.006 5.00 +_0.15C 0.067 max 1.70 max D 10.0380.96E 10.200 5.08F 10.0040.10G 10.050 1.27H 10.055 1.40Gold 11.8 μinches 0.3 μm minimum over Nickel 50 to 350 μinches 1.27 to 8.89 μm1 Typical dimensions Not to ScaleI 10.0240.60J 10.004R 0.10R K 10.008R0.20RPad Function Note1OutputEnable/Disable When this pad is not connected the oscillator shall operate.When this pad is <0.30 volts, the output will be inhibited (high impedance state.)Recommend connecting this pad to V CC if the oscillator is to be always on.2No connect There is no internal connection to this pad3Ground (GND)4Output The outputs must be terminated, 100 ohms between the outputs is the ideal termination.5Output*6Supply Voltage (V CC )Recommend connecting appropriate power supply bypass capacitors as close as possible.Layout and application informationRecommend connecting Pad 1 and Pad 2 together to permit the design to accept Enable/Disable on both input padsFor Optimum Jitter Performance, Pletronics recommends:• a ground plane under the device •no large transient signals (both current and voltage) should be routed under the device •do not layout near a large magnetic field such as a high frequency switching power supply •do not place near piezoelectric buzzers or mechanical fans.April 2007Tape and Reel: available for quantities of 250 to 1000 per reel, cut tape for < 250April 2007IMPORTANT NOTICEPletronics Incorporated (PLE) reserves the right to make corrections, improvements, modifications and other changes to this product at anytime. PLE reserves the right to discontinue any product or service without notice. Customers are responsible for obtaining the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to PLE’s terms and conditions of sale supplied at the time of order acknowledgment.PLE warrants performance of this product to the specifications applicable at the time of sale in accordance with PLE’s limited warranty. Testing and other quality control techniques are used to the extent PLE deems necessary to support this warranty. Except where mandated by specific contractual documents, testing of all parameters of each product is not necessarily performed.PLE assumes no liability for application assistance or customer product design. Customers are responsible for their products and applications using PLE components. To minimize the risks associated with the customer products and applications, customers should provide adequate design and operating safeguards.PLE products are not designed, intended, authorized or warranted to be suitable for use in life support applications, devices or systems or other critical applications that may involve potential risks of death, personal injury or severe property or environmental damage. Inclusion of PLE products in such applications is understood to be fully at the risk of the customer. Use of PLE products in such applications requires the written approval of an appropriate PLE officer. Questions concerning potential risk applications should be directed to PLE.PLE does not warrant or represent that any license, either express or implied, is granted under any PLE patent right, copyright, artwork or other intellectual property right relating to any combination, machine or process which PLE product or services are used. Information published by PLE regarding third-party products or services does not constitute a license from PLE to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from PLE under the patents or other intellectual property of PLE.Reproduction of information in PLE data sheets or web site is permissible only if the reproduction is without alteration and is accompanied by associated warranties, conditions, limitations and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. 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GPTP3156PHASE CONTROLLED SCRHigh reliability operation DC power supply AC drivesVOLTAGE UP TO 2800V AVERAGE CURRENT 1565A SURGE CURRENT29kABLOCKING CHARACTERISTICS CharacteristicConditionsV RRM Repetitive peak reverse voltage (*)2800V V RSM Non-repetitive peak reverse voltage (*)2800V V DRM Repetitive peak off-state voltage 2900V I DRM Repetitive peak off-state current, max.V DRM , single phase, half wave, Tj = Tjmax 75mA I RRMRepetitive peak reverse current, max.VRRM , single phase, half wave, Tj = Tjmax75mAON-STATE CHARACTERISTICSIT(AV)Average on-state current Sine wave,180° conduction, Th = 55 °C1565A I T(RMS)R:M:S on-state current Sine wave,180° conduction, Th = 55 °C2457A I TSM Surge on-state current Non rep. half sine wave, 50 Hz, V R = 0 V, T j = T jmax29kA I²t I² t for fusing coordination 4205kA²s V T(TO)Threshold voltage T j = T jmax 1,036V r TOn-state slope resistance T j = T jmax0,283m ΩV TM Peak on-state voltage, max On-state current I T =2000A , Tj = 25 °C 1,60V I H Holding current, typ T j = 25 °C 300mA I LLatching current, typT j = 25 °C700mATRIGGERING CHARACTERISTICSV GT Gate trigger voltage T j = 25 °C, V D = 5 V 3,0V I GT Gate trigger current T j = 25 °C, V D = 5 V 250mA V GD Non-trigger voltageV D = 67% V RRM , T j = T jmax 0,25V P GM Peak gate power dissipation Pulse width 100 µs150W P G(AV)Average gate power dissipation 2W I FGM Peak gate current10A V FGM Peak gate voltage (forward)10V V RGMPeak gate voltage (reverse)12VSWITCHING CHARACTERISTICSdi/dt Critical rate of rise of on-state current T j = T jmax 200A/µs dV/dt Critical rate of rise of off-state voltage T j = T jmax1000V/µst qTurn-off time, typT j = T jmax , I T = 1000 A, di/dt = -20 A/µs µsVR = 50 V, VD = 67% VDRM, dV/dt = 20 V/µsTHERMAL AND MECHANICAL CHARACTERISTICSR th(j-c)Thermal resistance (junction to case)Double side cooled 0,015°C/W R th(c-h)Thermal resistance (case to heatsink)Double side cooled0,006°C/W T jmax Max operating junction temperature 125°C T stg Storage temperature -40 / 125°CFClamping force ± 10%22kN Mass520gDocument GPTP3156T001(*) higher blocking voltage available on request: contact factory ValueGreen Power Solutions srlVia Greto di Cornigliano 6R - 16152 Genova , ItalyPhone: +39-010-659 1869Fax: +39-010-659 1870Web: www.gpsemi.it E-mail: info@gpsemi.itPHASE CONTROLLED SCR GPTP3156。

List of SCANTOOL fault codes 故障代码表MM6.LP ECUSCANTOOL codes 故障代码 Switching on ofMIL warninglight 故障灯点亮Fault 故障原因P0010P0011 Yes 是Variable intake solenoid valve (VTC/VVT) 可变进气电磁阀故障(可变气门正时控制系统)P0012 P0075P0076 P0077 NoVariable intake solenoid valve (VTC/VVT) 可变进气电磁阀故障(可变气门正时控制系统)P0105P0106P0107P0108Yes Intake manifold pressure sensor 进气压力传感器故障P0112P0113 No 否Intake air thermistor进气温度传感器故障(P0112=进气温度传感器线路电压太低；P0113=进气温度传感器线路输入电压太高)P0116P0117 P0118 YesEngine coolant thermistor 发动机冷却液温度传感器故障(P0116=水温传感器线路（讯号错误）；P0117=水温传感器电压太低；P0118=水温传感器电压太高)P0121 Yes Motorised throttle, tracks 1 and 2 电动节气门信号1和信号2故障P0122P0123Yes Motorised throttle, track 1 电动节气门信号1故障 P0130 Yes Upstream oxygen sensor 上游氧传感器故障SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因P0131传感器线路电压太低或短路P0132氧传感器线路电压太高P0133 Yes Ageing of upstream oxygen sensor上游氧传感器老化P0135 Yes Upstream oxygen sensor heater control上游氧传感器加热控制故障(氧传感器的加热线路不良)P0136P0137 P0138 YesDownstream oxygen sensor 下游氧传感器故障(P0136=氧传感器失效；P0137=氧传感器线路短路;；P0138=氧传感器电压太高)P0141 Yes Downstream oxygen sensor heater control上游氧传感器加热控制故障(氧传感器的加热线路不良)P0170 Yes Fuel injection 燃油喷射故障(燃料修正(混合比)不良) P0201P0261 P0262 YesInjector 1 control 1缸喷油觜控制故障(P0201=第1缸喷油觜控制线路失效；P0261=第1缸喷油觜线路电压太低；P0262=第1缸喷油觜线路电压太高)P0202P0264 P0265 YesInjector 2 control 2缸喷油觜控制故障(P0202=第2缸喷油觜控制线路失效；P0264=第2缸喷油觜线路电压太低；P0265=第2缸喷油觜线路电压太高)P0203P0267 P0268 YesInjector 3 control3缸喷油觜控制故障(P0203=第3缸喷油觜控制线路失效；P0267=第3缸喷油觜线路电压太低；P0268=第3缸喷油觜线路电压太高)P0204 Yes Injector 4 control 4缸喷油觜控制故障(P0204=第4缸SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因P0269 P0270 喷油觜控制线路失效；P0269=第3缸喷油觜线路电压太低；P0270=第3缸喷油觜线路电压太高)P0221 Yes Accelerator pedal sensor, incoherence tracks 1 and 2 油门路板传感器1和2不一致.P0222P0223 YesAccelerator pedal sensor, track 1 油门踏板传感器信号1电压故障(P0222=电压太低；P0223=电压太高)P0227P0228 YesAccelerator pedal sensor, track 2油门踏板传感器信号2电压故障(P0227=电压太低；P0228=电压太高)P0300P1336 YesMisfiring on several cylinders or non-specificcylinder 某缸缺火或缺火缸情况不明确故障(P0330=引擎曾经有失火(MISFIRE)现象)P0301P1337Yes Cylinder 1 misfiring 1缸缺火 P0302P1338Yes Cylinder 2 misfiring 2缸缺火 P0303P1339Yes Cylinder 3 misfiring 3缸缺火 P0304P1340Yes Cylinder 4 misfiring 4缸缺火 P0335P0336 P0339 YesEngine speed sensor 发动机转速传感器故障(P0335=曲轴传感器A组线路失效；P0336=曲轴传器A电压值不正确；P0339=曲轴传器A组线路间歇故障)P0341 No Cylinder 1 reference sensor 1缸位置传感器故障(凸轮轴传感器线路电压值不正确)SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因P0351 Yes Ignition coil 1 control (1/4 if twin-static) 点火线圈控制故障(点火线圈1组一次/二次线路失效)P0352 Yes Ignition coil 2 control (2/3 if twin-static) 点火线圈控制故障(点火线圈2组一次/二次线路失效)P0353 Yes Ignition coil 3 control点火线圈控制故障(点火线圈3组一次/二次线路失效)P0354 Yes Ignition coil 4 control点火线圈控制(点火线圈4组一次/二次线路失效)P0400P0401 P0402 YesExhaust gases recirculation 废气再循环故障(P0400=EGR阀系统流量控制失效；P0401=EGR阀系统流量控制不正确或太低（阻塞）引擎达工作温度，车速80KM以上行驶3～5分钟但EGR温度信号低于40℃；P0402=EGR阀系统流量控制太大（泄漏）)P0403 No Exhaust gases recirculation废气再循环故障(EGR阀流量电磁阀控制线路不良)P0404P1456 NoEGR solenoid valve learning EGR电磁阀学习故障(P0404=EGR阀流量电磁阀控制线路电压值不正确)P0405P0406 NoEGR valve position sensor EGR阀位置传感器故障(P0405=EGR阀流量传感器线路A组电压太低；P0406 =EGR阀流量传感器线路A组电压太高)P0410 Yes Air injection at exhaust二次空气注入故障(二次空气导入系统失效)P0413P0414 YesAir pump空气泵故障(P0413=二次空气导入系统流量电磁阀A组线路断路；P0414=二次空气导入系统流量电磁阀A组线路短路P0420 Yes Ageing of catalytic converter催化转换器老化(触媒系统净化效能太低)P0444P0445 YesPurge canister solenoid valve 碳罐电磁阀故障(P0444=燃油蒸发控制系统碳罐电磁伐控制线路断路或电压太低；P0445=燃油蒸发控制系统碳罐电磁伐控制线路断路或电压太高)SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因P0461P0462 P0463 NoFuel gauge 燃油表故障(P0461=燃油油面高度传器线路电压值不正确；P0462=燃油高度传器线路电压太低；P0463=燃油高度传器线路电压太高)P0500 Yes Vehicle speed sensor 车速传感器故障(车速传器线路失效或间歇不良)P0562P0563 YesBattery voltage 电瓶电压故障(P0562=电瓶电压太低；P0563=电瓶电压太高)P0571 No Incoherence between the two stop switches双功能刹车开关不一致(定速控制系统刹车开关线路A组失效)P0606 Yes Injection ECU 喷射ECU(ECM电脑失效) P0608P0609Yes Sensors supply 供给系统传感器故障P1133 Yes Motorised throttle track 1/ Pressure incoherence 节气门开度信号1/进气压力不一致P1134 Yes Motorised throttle track 2/ Pressure incoherence 节气门开度信号2/进气压力不一致P1152 Yes ECU ECU故障P1153 Yes Throttle stops learning 节气门止点学习故障P1157P1158Yes Motorised throttle, track 2节气门传感器信号2 故障P1160 Yes Intake air pipe leak 进气管漏气故障P1161 Yes Throttle position control 节气门位置控制故障P1290P1292 P1293 NoBi-mode solenoid valve (variable air intake) 双模式电磁阀故障(可变进气系统)SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因P1613 Yes Configuration 配置故障P1617 Yes ECU ECU故障P1621P1622P1623P1624P1625P1626P1627P1628P1629P1630Yes Safety faults 安全故障P1631 Yes ECU ECU故障P2100P2101P2102P2103Yes Motorised throttle ECU 节气门体(模块)故障P2143P2144P2145Yes EGR valve EGR阀故障U0028 Yes Comfort Van network fault VAN网(舒适网)故障 U0037 Yes Body van network fault VAN(车身网)网故障SCANTOOL codes 故障代码MIL warninglight 故障灯点亮Fault 故障原因U0103U0404 YesDialogue with the automatic gearbox 与自动变速箱通话故障U0121U0415Yes Dialogue with the ABS or ESP 与ABS或ESP通话故障U1000 Yes The ECU is no longer communicating on the network 该ECU与网络无长久通信U1003 Yes No communication on the CAN network不与CAN网通信U1118U1218Yes Dialogue with the BSI 与BSI通话故障武汉宝狮技术室17/04/2006。

N-CHANNEL ENHANCEMENT MODE POWER MOSFETAbsolute Maximum RatingsSymbol Units V DS V V GSV I D @T C =25℃A I D @T C =100℃A I DMA P D @T C =25℃W W/℃T STG ℃T J℃Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 2.0℃/W Rthj-ambThermal Resistance Junction-ambientMax.62℃/WData & specifications subject to change without notice200218032Thermal DataParameterPulsed Drain Current 1180Operating Junction Temperature Range-55 to 150Linear Derating Factor 0.5Storage Temperature RangeTotal Power Dissipation 62.5-55 to 150Continuous Drain Current, V GS @ 10V 50Continuous Drain Current, V GS @ 10V 32Drain-Source Voltage 25Gate-Source VoltageAP60L02S/PParameterRating ± 20G DSTO-263(S)GDS TO-220(P)Electrical Characteristics@T j =25o C(unless otherwise specified)Symbol ParameterTest ConditionsMin.Typ.Max.Units BV DSSDrain-Source Breakdown VoltageV GS =0V, I D =250uA 25--V ΔB V DSS /ΔT jBreakdown Voltage Temperature Coefficient Reference to 25℃, I D =1mA-0.037-V/℃R DS(ON)Static Drain-Source On-Resistance V GS =10V, I D =25A --12m ΩV GS =4.5V, I D =20A --26m ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =250uA 1-3V g fs Forward TransconductanceV DS =10V, I D =25A -30-S I DSS Drain-Source Leakage Current (T j =25o C)V DS =25V, V GS =0V --1uA Drain-Source Leakage Current (T j =150o C)V DS =20V, V GS =0V --25uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =25A -21nC Q gs Gate-Source Charge V DS =20V - 2.8nC Q gd Gate-Drain ("Miller") Charge V GS =5V -16nC t d(on)Turn-on Delay Time 2V DS =15V -8-ns t r Rise TimeI D =20A-75-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =10V -22-ns t f Fall Time R D =0.75Ω-20-ns C iss Input Capacitance V GS =0V -605-pF C oss Output CapacitanceV DS =25V -415-pF C rssReverse Transfer Capacitancef=1.0MHz-195-pFSource-Drain DiodeSymbol ParameterTest ConditionsMin.Typ.Max.Units I S Continuous Source Current ( Body Diode )V D =V G =0V , V S =1.26V --50A I SM Pulsed Source Current ( Body Diode )1--180A V SDForward On Voltage 2T j =25℃, I S =50A, V GS =0V--1.26VNotes:1.Pulse width limited by safe operating area.2.Pulse width <300us , duty cycle <2%.AP60L02S/P±100± 20VAP60L02S/PFig 1. Typical Output Characteristics Fig 2. Typical Output CharacteristicsFig 3. On-Resistance v.s. Gate VoltageFig 4. Normalized On-Resistancev.s. Junction TemperatureAP60L02S/PFig 5. Maximum Drain Current v.s. Fig 6. Typical Power DissipationCase TemperatureFig 7. Maximum Safe Operating AreaFig 8. Effective Transient Thermal ImpedanceAP60L02S/PFig 9. Gate Charge Characteristics Fig 10. Typical Capacitance CharacteristicsReverse DiodeJunction TemperatureAP60L02S/PFig 13. Switching Time Circuit Fig 14. Switching Time WaveformFig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform。