DYNAMIC
Input Capacitance C iss 530 Output Capacitance
C oss 135 Reverse Transfer Capacitance C rss
V GS = 0V, V DS = -15V, f = 1MHz 70
pF Total Gate Charge 2 Q g 10 14 Gate-Source Charge 2 Q gs 2.2 Gate-Drain Charge 2 Q gd
V DS = 0.5V (BR)DSS , V GS = -10V, I D = -6A
2
nC Turn-On Delay Time 2 t d(on) 5.7 Rise Time 2
t r V DS = -15V, R L = 1Ω 10 Turn-Off Delay Time 2
t d(off)
I D ? -1A, V GS = -10V, R GS = 6Ω
18
Fall Time 2
t f 5
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 °C)
Continuous Current I S -2.1
Pulsed Current 3 I SM -4 A
Forward Voltage 1 V SD I F = -1A, V GS = 0V
-1.2
V
Reverse Recovery Time t rr I F = -5A, dl F /dt = 100A / μS
15.5 nS Reverse Recovery Charge
Q rr
7.9 nC
1Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature. 3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P06P03LVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.