SOT23N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 –DECEMBER 19957
FEATURES
*200Volt V DS *R DS(on)=25?
PARTMARKING DETAIL –MU
(1) Measured under pulsed conditions.Width=300μs.Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50?source impedance and <5ns rise time on a pulse generator
ZVN3320F
3 -398
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分销商库存信息:
DIODES
ZVN3320FTA ZVN3320FTC