Received date:2011-05-09 收稿日期:2011-05-09
Foundation item:Fundamental Resear ch Funds for Central Un iversities(2010M S006);Specialized Res earch Fund for th e Doctoral Program
of H igher E ducation(20100142120091)
基金项目:中央高校基本科研业务基金资助项目(2010M S006);高等学校博士学科点专项科研基金资助项目(20100142120091) Biography:W ANG Yu nqi(1985-),male,borin in H eilong jiang Provin ce.M aster candidate.H is r esear ch areas cover s the piezoelectric ceram -ics and devices.Correspondent author:FAN Guifen (1974-),female,born in H ubei Province,PH.D,ass ociate professor.Her re -sarch areas cover s th e ferroelectric and piezoelectric ceramics and devices. 作者简介:王允祺(1985-),男,黑龙江哈尔滨人,硕士生,主要从事压电材料与器件的研究。通信作者:范桂芬(1974-),女,湖北蕲春人,副
教授,博士,主要从事铁电、压电陶瓷材料与器件的研究。
文章编号:1004
-2474(2011)04-0597-05Effects of ZnO Addition on the Sintering Temperature and Piezoelectric
Properties of PSN -PZT Ceramic
WANG Yunqi 1,2,FAN Guifen 1,2,LV Wenzhong 1,2
(1.Dept.of Electronic Science and T ech nology,H uazhong University of Sciencean d T echnology,Wuhan 430074,China;
2.Key Lab.of Functional M aterials For Electronic Information,M OE,H uazhong University of Science and T ech nology,Wuh an 430074,China)
Abstract:T he effects o f ZnO addit ion on t he sintering temper atur e and piezoelect ric pro per ties o f PSN -PZT ce -r amic modified by Ba and Fe w ere investig ated in this w ork,in o rder to decr ease the sint er ing temper ature o f PZT piezoelect ric ceramic.T he relat ionship between t he micro structur e and pro per ties was analyzed by means of XR D and SEM.T he XRD patterns show ed that all the cer amics ex hibited the tetr ago na l per ovskite structur e.T he piezoe -lect ric propert ies are pro moted when ZnO content is low er than 0.1wt.%.M eanw hile,the specimens w ith 0.1w t.%o f ZnO addition also exhibit ed ex cellent piezoelect ric pr operties.T hese results demonst rated that pro per ZnO additive could decr ease the sintering temper ature and enhance the piezoelectr ic pro per ties.
Key words:piezoelect ric ceramic;lo w temperatur e sinter ing;ZnO addit ion
ZnO 掺杂对PSN -PZT 陶瓷烧结温度及压电性能的影响
王允祺
1,2
,范桂芬1,2,吕文中
1,2
(1.华中科技大学电子科学与技术系,湖北武汉430074;
2.华中科技大学电子信息功能材料教育部重点实验室(B 类),湖北武汉430074)
摘 要:为了降低PZT 压电陶瓷的烧结温度,研究了ZnO 掺杂对Ba 、Fe 改性的P SN -PZT 陶瓷的烧结温度和压电特性的影响。通过XRD 和SEM 测试手段,分析了微观结构和材料性能的关系。XRD 结果显示所有样品均呈现四方钙钛矿结构。在w (ZnO)<0.1%时陶瓷压电性能随Z nO 的增加而提高;当w (ZnO)=0.1%时,陶瓷样品同样展现出了优良的压电性能。这些结果证明了适量的ZnO 掺杂可以降低陶瓷的烧结温度并提高压电性能。
关键词:压电陶瓷;低温烧结;ZnO 掺杂中图分类号:T M 282 文献标识码:A
0 Int roduction
The PZT ceramics are w idely used in various electr onic devices for their ex cellent piezoelectric and dielectric properties.With the development o f
micro -electronics,the m ultilayer ceramic devices have receiv ed considerable attention because o f the w ide rang e o f their applicatio ns
[1]
.The sintering
temperature o f ceram ics is needed to be low er to enable the use o f cheaper electr odes.Consequent -ly,extensive research w orks have been carr ied out
to decrease the sintering temperature o f the m ater-i al such as using advanced sintering technolog y and chemical doping.The advanced technolo gies such as ho t pressing require expensive equipm ents and the pr oduction v olume is limited.By contr ast,the
第33卷第4期压 电 与 声 光
Vo l.33No.42011年8月
PIEZO EL ECT RI CS &ACO U ST OO PT ICS
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