当前位置:文档之家› PRLL5817中文资料

PRLL5817中文资料

DATA SHEET

Product speci?cation

Supersedes data of 1996 May 03

1999Apr 22

DISCRETE SEMICONDUCTORS

PRLL5817; PRLL5818; PRLL5819Schottky barrier diodes

fpage

M3D121

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

FEATURES

?Low switching losses

?Fast recovery time

?Guard ring protected

?Hermetically sealed glass SMD

package.

APPLICATIONS

?Low power, switched-mode power

supplies

?Rectifying

?Polarity protection.

DESCRIPTION

The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating Implotec TM(1) technology.

(1)Implotec is a trademark of Philips.MARKING

TYPE NUMBER MARKING CODE PRLL58179

PRLL58189

PRLL58199

Fig.1 Simplified outline (SOD87) and symbol.

handbook, halfpage

MAM190

k a

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC134).

SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V R continuous reverse voltage

PRLL5817?20V

PRLL5818?30V

PRLL5819?40V

V RSM non-repetitive peak reverse voltage

PRLL5817?24V

PRLL5818?36V

PRLL5819?48V

V RRM repetitive peak reverse voltage

PRLL5817?20V

PRLL5818?30V

PRLL5819?40V

V RWM crest working reverse voltage

PRLL5817?20V

PRLL5818?30V

PRLL5819?40V

I F(AV)average forward current T amb=60°C?1A

I FSM non-repetitive peak forward current t=10ms half sine wave;

?25A

T j=T j max prior to surge:V R=0

T stg storage temperature?65+175°C

T j junction temperature?125°C

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

ELECTRICAL CHARACTERISTICS

T amb=25°C unless otherwise speci?ed.

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT V F forward voltage see Fig.2

PRLL5817I F=0.1A??320mV

I F=1A??450mV

I F=3A??750mV

V F forward voltage see Fig.2

PRLL5818I F=0.1A??330mV

I F=1A??550mV

I F=3A??875mV

V F forward voltage see Fig.2

PRLL5819I F=0.1A??340mV

I F=1A??600mV

I F=3A??900mV

I R reverse current V R=V RRMmax; note1?0.51mA

V R=V RRMmax; T j=100°C?510mA

C d diode capacitance V R=4V; f=1MHz

PRLL5817?70?pF

PRLL5818?50?pF

PRLL5819?50?pF

Note

1.Pulse test: t p=300μs;δ=0.0

2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note1150K/W Note

1.Refer to SOD87 standard mounting conditions.

Schottky barrier diodes

PRLL5817; PRLL5818; PRLL5819

GRAPHICAL DATA

handbook, halfpage

01

5

1

MBE634

2

3

4

0.5

V F (V)

I F

(A)

T j = 125 o C

25 o C

Fig.2 Typical forward voltage.

Fig.3

PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current; a =I F(RMS)/I F(AV).

2

1

00.5 1.5

MBE642

1(W)

0.5

P F(AV)I F(AV) (A)

a = 3

2.5

1.57

1.42

1

2

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

Fig.4

PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current; a =I F(RMS)/I F(AV).

2

1

00.5 1.5

MBE641

1(W)

0.5

P F(AV)I F(AV) (A)

a = 3

2.5

1.57

1.42

1

2Fig.5

PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current; a =I F(RMS)/I F(AV).

2

1

00.5 1.5

MBE643

1(W)

0.5

P F(AV)I F(AV) (A)

a = 3

2.5

1.57

1.42

1

2

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

Fig.6

PRLL5817. Maximum permissible junction temperature as a function of reverse voltage;device mounted; refer to SOD87 standard mounting conditions.

020

200

MBE635100

10

V R (V)

T j (o C)

V RWM V R

δ = 0.2

δ = 0.5

Fig.7

PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values);device mounted; refer to SOD87 standard mounting conditions.

020

0.1

MBE640

0.05

P R 10

V R (V)

(W)

V RWM V R

δ = 0.5

δ = 0.2

Fig.8

PRLL5818. Maximum permissible junction temperature as a function of reverse voltage;device mounted; refer to SOD87 standard mounting conditions.

040

200

MBE636100

20

V R (V)

T j (o C)

V RWM V R

δ = 0.2

δ = 0.5

Fig.9

PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values);device mounted; refer to SOD87 standard mounting conditions.

040

0.1

MBE638

0.05

P R 20

V R (V)

(W)

V RWM V R

δ = 0.5

δ = 0.2

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

Fig.10PRLL5819. Maximum permissible junction

temperature as a function of reverse voltage;device mounted; refer to SOD87 standard mounting conditions.020

200

MBE637100

10

V R (V)

T j (o C)

V RWM V R

δ = 0.2

δ = 0.5

Fig.11PRLL5819. Reverse power dissipation as a

function of reverse voltage (max. values);device mounted; refer to SOD87 standard mounting conditions.

040

0.1

MBE639

0.05

P R 20

V R (V)

(W)

V RWM V R

δ = 0.5

δ = 0.2

Schottky barrier diodes

PRLL5817; PRLL5818; PRLL5819

PACKAGE OUTLINE

DEFINITIONS LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data sheet status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the speci?cation. REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC JEDEC

EIAJ

SOD87

100H03

99-03-31

Hermetically sealed glass surface mounted package;Implotec TM(1) technology; 2 connectors

SOD87

UNIT D mm 2.12.0

2.01.8

3.73.3

0.3

D1H L DIMENSIONS (mm are the original dimensions)H

D

D 1

L

L

(2)

01 2 mm

scale

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

k

a

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

NOTES

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

NOTES

Internet: https://www.doczj.com/doc/b616540625.html,

Philips Semiconductors – a worldwide company

? Philips Electronics N.V. 1999

SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,Tel.+31402782785,Fax.+31402788399

New Zealand: 2Wagener Place, C.P.O.Box 1041, AUCKLAND,Tel.+6498494160,Fax.+6498497811Norway: Box 1, Manglerud 0612, OSLO,Tel.+4722748000,Fax.+4722748341Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106Valero St.Salcedo Village, P.O.Box 2108MCC,MAKATI,Metro MANILA, Tel.+6328166380,Fax.+6328173474Poland: Ul.Lukiska 10, PL 04-123WARSZAWA,Tel.+48226122831,Fax.+48226122327Portugal: see Spain Romania: see Italy

Russia: Philips Russia, https://www.doczj.com/doc/b616540625.html,atcheva 35A, 119048MOSCOW,Tel.+70957556918,Fax.+70957556919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,Tel.+653502538,Fax.+652516500Slovakia: see Austria Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215Main Road Martindale,2092JOHANNESBURG, P.O.Box 7430 Johannesburg 2000,Tel.+27114705911,Fax.+27114705494South America: Al.Vicente Pinzon,173, 6th floor,04547-130S?O PAULO,SP, Brazil,

Tel.+55118212333,Fax.+55118212382Spain: Balmes 22, 08007BARCELONA,Tel.+34933016312,Fax.+34933014107

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,Tel.+46859852000,Fax.+46859852745

Switzerland: Allmendstrasse 140, CH-8027ZüRICH,Tel.+4114882741Fax.+4114883263

Taiwan: Philips Semiconductors, 6F, No.96, Chien Kuo N.Rd.,Sec.1,TAIPEI, Taiwan Tel.+886221342886,Fax.+886221342874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,Tel.+6627454090,Fax.+6623980793

Turkey: Talatpasa Cad. No.5, 80640GüLTEPE/ISTANBUL,Tel.+902122792770,Fax.+902122826707

Ukraine : PHILIPS UKRAINE, 4Patrice Lumumba str., Building B, Floor 7,252042KIEV, Tel.+380442642776, Fax. +380442680461

United Kingdom: Philips Semiconductors Ltd., 276Bath Road, Hayes,MIDDLESEX UB35BX, Tel.+441817305000,Fax.+441817548421United States: 811East Arques Avenue, SUNNYVALE, CA 94088-3409,Tel.+18002347381, Fax.+18009430087Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000BEOGRAD,Tel.+38111625344,Fax.+38111635777

For all other countries apply to: Philips Semiconductors,

International Marketing &Sales Communications,Building BE-p, P.O.Box 218,5600MD EINDHOVEN, The Netherlands,Fax.+31402724825Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,Tel.+61298054455,Fax.+61298054466

Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213,Tel.+431601011248, Fax.+431601011210

Belarus: Hotel Minsk Business Center, Bld.3, r.1211, Volodarski Str.6,220050MINSK, Tel.+375172200733,Fax.+375172200773Belgium: see The Netherlands Brazil:see South America

Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor,51James Bourchier Blvd., 1407SOFIA,Tel.+3592689211,Fax.+3592689102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,Tel.+18002347381, Fax.+18009430087

China/Hong Kong: 501Hong Kong Industrial Technology Centre,72Tat Chee Avenue, Kowloon Tong, HONG KONG,Tel.+852********,Fax.+852********Colombia: see South America Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780COPENHAGEN V,Tel.+4533293333,Fax.+4533293905Finland: Sinikalliontie 3, FIN-02630ESPOO,Tel.+3589615800,Fax.+358961580920

France: 51Rue Carnot, BP317, 92156SURESNES Cedex,Tel.+33140996161,Fax.+33140996427

Germany: Hammerbrookstra?e 69, D-20097HAMBURG,Tel.+4940235360,Fax.+494023536300

Hungary:see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,254-D,Dr.Annie Besant Road, Worli, MUMBAI 400025,Tel.+91224938541,Fax.+91224930966

Indonesia: PT Philips Development Corporation, Semiconductors Division,Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,Tel.+62217940040ext.2501, Fax.+62217940080Ireland: Newstead, Clonskeagh, DUBLIN 14,Tel.+35317640000,Fax.+35317640200

Israel: RAPAC Electronics, 7Kehilat Saloniki St, PO Box 18053,TEL AVIV 61180, Tel.+97236450444,Fax.+97236491007Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,20124MILANO, Tel.+39267522531,Fax.+39267522557Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel.+81337405130,Fax.+81337405077Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,Tel.+8227091412,Fax.+8227091415

Malaysia: No.76Jalan Universiti, 46200PETALING JAYA, SELANGOR,Tel.+60 37505214,Fax.+6037574880

Mexico: 5900Gateway East, Suite 200, EL PASO, TEXAS 79905,Tel.+9-58002347381, Fax +9-58009430087Middle East: see Italy

Printed in The Netherlands

115002/00/02/pp12 Date of release: 1999Apr 22Document order number: 939775005474

相关主题
文本预览
相关文档 最新文档