IGBT
Reverse conducting IGBT IHW40N60R Resonant Switching Series
Data sheet
Reverse conducting IGBT
Features:
? Powerful monolithic body diode with low forward voltage designed for soft commutation only
? TRENCHSTOP TM technology applications offers:- very tight parameter distribution
- high ruggedness, temperature stable behavior - low V CEsat
- easy parallel switching capability due to positive temperature coefficient in V CEsat ? Low EMI
? Qualified according to JESD-022 for target applications ? Pb-free lead plating; RoHS compliant
? Complete product spectrum and PSpice Models:https://www.doczj.com/doc/b310729002.html,/igbt/Applications:
? Inductive cooking
? Inverterized microwave ovens ? Resonant converters
? Soft switching applications
G
C
E
Key Performance and Package Parameters Type V CE I C V CEsat , T vj =25°C
T vjmax Marking Package IHW40N60R
600V
40A
1.65V
175°C
H40R60
PG-TO247-3
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Collector-emitter voltage, T vj ≥ 25°C V CE600V
DC collector current, limited by T vjmax T C = 25°C
T C = 100°C I C80.0
40.0
A
Pulsed collector current, t p limited by T vjmax I Cpuls120.0A Turn off safe operating area
V CE ≤ 600V, T vj ≤ 175°C, t p = 1μs-120.0A
Diode forward current, limited by T vjmax T C = 25°C
T C = 100°C I F80.0
40.0
A
Diode pulsed current, t p limited by T vjmax I Fpuls120.0A Gate-emitter voltage V GE±20V
Power dissipation T C = 25°C
Power dissipation T C = 100°C P tot 305.0
152.5W
Operating junction temperature T vj-40...+175°C Storage temperature T stg-55...+150°C Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s260°C Mounting torque, M3 screw
Maximum of mounting processes: 3M0.6Nm Thermal Resistance
Parameter Symbol Conditions Max. Value Unit Characteristic
IGBT thermal resistance,
junction - case R th(j-c)0.49K/W Diode thermal resistance,
junction - case R th(j-c)0.49K/W Thermal resistance
junction - ambient R th(j-a)40K/W
Electrical Characteristic, at T vj = 25°C, unless otherwise specified Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
Static Characteristic
Collector-emitter breakdown voltage V (BR)CES V GE = 0V, I C = 0.50mA 600--V Collector-emitter saturation voltage V CEsat
V GE = 15.0V, I C = 40.0A T vj = 25°C T vj = 175°C -- 1.652.10 2.05-V
Diode forward voltage V F V GE = 0V, I F = 40.0A T vj = 25°C T vj = 175°C
-- 1.651.90 2.05-V Gate-emitter threshold voltage V GE(th)I C = 0.58mA, V CE = V GE 4.1 4.9 5.7
V
Zero gate voltage collector current I CES V CE = 600V, V GE = 0V T vj = 25°C T vj = 175°C ----40.03000.0μA Gate-emitter leakage current I GES V CE = 0V, V GE = 20V --100nA Transconductance g fs V CE = 20V, I C = 40.0A
-19.0-S Integrated gate resistor
r G
none
?
Electrical Characteristic, at T vj = 25°C, unless otherwise specified Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
Dynamic Characteristic Input capacitance C ies -2370-Output capacitance
C oes -80-Reverse transfer capacitance C res -65-V CE = 25V, V GE = 0V, f = 1MHz
pF
Gate charge
Q G V CC = 480V, I C = 40.0A,V GE = 15V
-223.0-nC Internal emitter inductance
measured 5mm (0.197 in.) from case
L E
-13.0
-nH Switching Characteristic, Inductive Load Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBT Characteristic, at T vj = 25°C Turn-off delay time t d(off)-193-ns Fall time t f -24-ns Turn-off energy
E off
-0.75
-mJ
T vj = 25°C,
V CC = 400V, I C = 40.0A,V GE = 0.0/15.0V,
R G(on) = 5.6?, R G(off) = 5.6?,L σ = 90nH, C σ = 67pF L σ, C σ from Fig. E
Energy losses include “tail” and diode reverse recovery.
Switching Characteristic, Inductive Load Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBT Characteristic, at T vj = 175°C Turn-off delay time t d(off)-227-ns Fall time t f -44-ns Turn-off energy
E off
- 1.22
-mJ
T vj = 175°C,
V CC = 400V, I C = 40.0A,V GE = 0.0/15.0V,
R G(on) = 5.6?, R G(off) = 5.6?,L σ = 90nH, C σ = 67pF L σ, C σ from Fig. E
Energy losses include “tail” and diode reverse recovery.
Figure 1.Collector current as a function of switching
frequency
(T j ≤175°C, D =0.5, V CE =400V, V GE =0/15V,R G =5.6?)
f , SWITCHING FREQUENCY [Hz]
I C , C O L L E C T O R C U R R E N T [A ]
1010010001E+41E+51E+6
20
40
60
80
100
120
140
T C =80°T C =110°
Figure 2.Forward bias safe operating area
(D =0, T C =25°C, T j ≤175°C; V GE =15V)
V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C , C O L L E C T O R C U R R E N T [A ]
1101001000
0.1
1
10
100
t p =1μs
5μs
20μs 100μs 1ms 10ms DC
Figure 3.Power dissipation as a function of case
temperature (T j ≤175°C)
T C , CASE TEMPERATURE [°C]
P t o t , P O W E R D I S S I P A T I O N [W ]
25
50
75
100
125
150
175
050
100
150
200
250
300
350Figure 4.Collector current as a function of case
temperature
(V GE ≥15V, T j ≤175°C)
T C , CASE TEMPERATURE [°C]
I C , C O L L E C T O R C U R R E N T [A ]
255075100125150175
10
20
30
40
50
60
70
80
Figure 5.Typical output characteristic
(T j =25°C)
V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C , C O L L E C T O R C U R R E N T [A ]
01
2
3
4
5
6
20
40
60
80
100
120
V GE =20V 17V 15V
13V
11V
9V 7V
Figure 6.Typical output characteristic
(T j =175°C)
V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C , C O L L E C T O R C U R R E N T [A ]
0123456
20
40
60
80
100
120
V GE =20V
17V 15V 13V
11V 9V
7V
Figure 7.Typical transfer characteristic
(V CE =20V)
V GE , GATE-EMITTER VOLTAGE [V]
I C , C O L L E C T O R C U R R E N T [A ]
02
4
6
8
10
12
20
40
60
80
100
120
T j =25°C T j =175°C
Figure 8.Typical collector-emitter saturation voltage as
a function of junction temperature (V GE =15V)
T j , JUNCTION TEMPERATURE [°C]
V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N [V ]
0255075100125150175
1.0
1.5
2.0
2.5
3.0
3.5
I C =20A I C =40A I C =80A
Figure 9.Typical switching times as a function of
collector current
(inductive load, T j =175°C, V CE =400V,V GE =0/15V, R G(on)=5.6?, R G(off)=5.6?,dynamic test circuit in Figure E)
I C , COLLECTOR CURRENT [A]
t , S W I T C H I N G T I M E S [n s ]
20
40
60
80
10100
1000
t d(off)t f
Figure 10.Typical switching times as a function of gate
resistance
(inductive load, T j =175°C, V CE =400V,
V GE =0/15V, I C =40A, dynamic test circuit in Figure E)
R G , GATE RESISTANCE [?]
t , S W I T C H I N G T I M E S [n s ]
010********
10
100
1000
t d(off)t f
Figure 11.Typical switching times as a function of
junction temperature
(inductive load, V CE =400V, V GE =0/15V,I C =40A, R G(on)=5.6?, R G(off)=5.6?, dynamic T j , JUNCTION TEMPERATURE [°C]
t , S W I T C H I N G T I M E S [n s ]
255075100125150175
10
1001000
t d(off)t f
Figure 12.Gate-emitter threshold voltage as a function
of junction temperature (I C =0.58mA)
T j , JUNCTION TEMPERATURE [°C]
V G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E [V ]
0255075100125150175
1
2
3
4
5
6
7
typ.min.max.
Figure 13.Typical switching energy losses as a
function of collector current
(inductive load, T j =175°C, V CE =400V,V GE =0/15V, R G(on)=5.6?, R G(off)=5.6?,dynamic test circuit in Figure E)
I C , COLLECTOR CURRENT [A]
E , S W I T C H I N G E N E R G Y L O S S E S [m J ]
10
20
30
40
50
60
70
80
0.00.5
1.0
1.5
2.0
2.5
3.0
E off
Figure 14.Typical switching energy losses as a
function of gate resistance
(inductive load, T j =175°C, V CE =400V,
V GE =0/15V, dynamic test circuit in Figure E)
R G , GATE RESISTANCE [?]
E , S W I T C H I N G E N E R G Y L O S S E S [m J ]
010********
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
E off
Figure 15.Typical switching energy losses as a
function of junction temperature (inductive load, V CE =400V, V GE =0/15V,I C =40A, R G(on)=5.6?, R G(off)=5.6?, dynamic T j , JUNCTION TEMPERATURE [°C]
E , S W I T C H I N G E N E R G Y L O S S E S [m J ]
255075100125150175
0.50
0.75
1.00
1.25
1.50
E off
Figure 16.Typical switching energy losses as a
function of collector emitter voltage (inductive load, T j =175°C, V GE =0/15V,I C =40A, R G(on)=5.6?, R G(off)=5.6?, dynamic V CE , COLLECTOR-EMITTER VOLTAGE [V]
E , S W I T C H I N G E N E R G Y L O S S E S [m J ]
300
400
0.00.4
0.8
1.2
1.6
2.0
E *
Figure 17.Typical gate charge
(I C =40A)
Q GE , GATE CHARGE [nC]
V G E , G A T E -E M I T T E R V O L T A G E [V ]
050100150200250
2
4
6
8
10
12
14
16
120V 480V
Figure 18.Typical capacitance as a function of
collector-emitter voltage (V GE =0V, f=1MHz)
V CE , COLLECTOR-EMITTER VOLTAGE [V]
C , C A P A C I T A N C E [p F ]
0102030
10
100
1000
C ies C oes C res
Figure 19.IGBT transient thermal impedance
(D =t p /T)
t p , PULSE WIDTH [s]
Z t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E [K /W ]
1E-6
1E-51E-40.0010.010.11
0.001
0.010.1
1D=0.50.20.10.050.020.01
single pulse
i:1234Figure 20.Diode transient thermal impedance as a
function of pulse width (D =t p /T)
t p , PULSE WIDTH [s]
Z t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E [K /W ]
1E-6
1E-51E-40.0010.010.11
0.001
0.01
0.1
1
D=0.50.20.10.050.020.01
single pulse
i:1234
Figure 21.Typical diode forward current as a function
of forward voltage
V F , FORWARD VOLTAGE [V]
I F , F O R W A R D C U R R E N T [A ]
1
2
3
4
020
40
6080
100
120
T j =25°C T j =175°C
Figure 22.Typical diode forward voltage as a function
of junction temperature
T j , JUNCTION TEMPERATURE [°C]
V F , F O R W A R D V O L T A G E [V ]
0255075100125150175
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
I F =20A I F =40A I F =80A
t d(off)t f t r
t d(on)90%I C
10%I C
90%I C
10%V GE
10%I C t
90%V GE
t
t
90%V GE
V GE (t)
t
t
t
t 1
t 4
2%I C
10%V GE
2%V CE
t 2
t 3
E
t t V I t
off =x x d 1
2
CE C E t t V I t
on =x x d 3
4
CE C Figure A.
Figure B.
Figure C.Definition of diode switching
characteristics
Figure E.Dynamic test circuit
Figure D.
I (t)
C Parasitic inductance L ,parasitic capacitor C ,relief capacitor C ,
(only for ZVT switching)
s s r V (t)
CE V GE (t)
I (t)
C V (t)
CE
Revision History
IHW40N60R
Revision: 2015-01-26, Rev. 2.6
Previous Revision
Revision Date Subjects (major changes since last revision)
1.12007-10-26-
2.22008-07-29-
2.32011-08-03-
2.42013-12-10New value ICES max limit at 175°C
2.52014-03-12Storage temp -55...+150°C
2.62015-01-26Minor changes
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81726 Munich, Germany
81726 München, Germany
? 2015 Infineon Technologies AG
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