IRF4905S/L
HEXFET ? Power MOSFET
PD - 9.1478A
l
Advanced Process Technology l Surface Mount (IRF4905S)
l Low-profile through-hole (IRF4905L)l 175°C Operating Temperature l Fast Switching l P-Channel
l Fully Avalanche Rated 8/25/97
S
D
G
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-profile applications.
Description
V DSS = -55V R DS(on) = 0.02?
I D = -74A
2 D Pa
k
T O -262
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
–––0.75R θJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ -10V -74I D @ T C = 100°C Continuous Drain Current, V GS @ -10V -52A I DM
Pulsed Drain Current -260P D @T A = 25°C Power Dissipation 3.8W P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 930mJ I AR Avalanche Current
-38A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
IRF4905S/L
Starting T J = 25°C, L = 1.3mH
R G = 25?, I AS = -38A. (See Figure 12)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I SD ≤ -38A, di/dt ≤ -270A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Uses IRF4905 data and test conditions
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
IRF4905S/L
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics
110
100
1000
0.1
1
10
100
D D S
-I , D r a i n -t o -S o u r c e C u r r e n t (A )
-V , Drain-to-Source Voltage (V)110
100
1000
0.1
1
10
100
D D S
-I , D r a i n -t o -S o u r c e C u r r e n t (A )
-V , Drain-to-Source Voltage (V)110
100
10004
5
6
7
8
9
10
G S
D
-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Ga te-to-So urce Voltage (V)0.0
0.5
1.0
1.5
2.0
-60-40-20
20
40
60
80
100120140160180
J
T , Junction Temperature (°C)R , D r a i n -t o -S o u r c e O n R e s i s t a n c e
D S (o n )(N o r m a l i z e d )
IRF4905S/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
01000
2000
3000
4000
5000
6000
7000
1
10
100
C , C a p a c i t a n c e (p F )
D S -V , Drain-to-Source Voltage (V)
04
8
12
16
20
40
80
120
160
200
G
G S -V , G a t e -t o -S o u r c e
V o l t a g e (V )
Q , Total G ate C harge (nC)110
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SD S D -I , R e v e r s e D r a i n C u r r e n t (A )
-V , Source-to-Drain Voltage (V)1
10
100
1000
1
10
100
-I , D r a i n C u r r e n t (A )
-V , Drain-to-Source Voltage (V)DS
D
IRF4905S/L
Fig 10a. Switching Time Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Case Temperature
R V DD
V V
IRF4905S/L
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V Charge
-10V
DS
Current Sampling Resistors
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I AS
IRF4905S/L Peak Diode Recovery dv/dt Test Circuit
V DD
* Reverse Polarity of D.U.T for P-Channel
V GS
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRF4905S/L
D 2Pak Package Outline
D 2Pak
Part Marking Information
IRF4905S/L
Package Outline
TO-262 Outline
Part Marking Information
IRF4905S/L
Tape & Reel Information
D 2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
https://www.doczj.com/doc/9c11067075.html,/Data and specifications subject to change without notice.
8/97
3
4
4
TR R
FE ED D IR EC TION
1.85(.073)
1.65(.065)
1.60 (.063)1.50 (.059)
4.10(.161)3.90(.153)
TR L
F EED D IR EC TIO N 10.90(.429)10.70(.421)
16.10(.634)15.90(.626)
1.75 (.069)1.25 (.049)
11.60 (.457)11.40 (.449)
15.42 (.609)15.22 (.601)
4.72 (.136)4.52 (.178)
24.30(.957)23.90(.941)
0.368(.0145)0.342(.0135)
1.60 (.063)1.50 (.059)
13.50 (.532)12.80 (.504)330.00(14.173) M AX.
27.40 (1.079)23.90 (.941)
60.00 (2.362) M IN.
30.40 (1.197) M A X.
26.40 (1.039)24.40(.961)
N O T ES :
1. C O M F O R M S T O EIA -418.
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER.
3. D IM E N S IO N M EA S U R E D @ H U B.
4.IN C LU D E S F L AN G E D IS T O R T IO N @O U T E R ED G E.