Cool MOS? Power Transistor
Feature
? New revolutionary high voltage technology ? Worldwide best R DS(on) in TO 220? Ultra low gate charge ? Periodic avalanche rated ? Extreme d v /d t rated
? Ultra low effective capacitances
Product Summary 650V R DS(on)0.19?I D
20
A
V DS @ T jmax P-TO220-3-1
Marking 20N60C220N60C220N60C2
Type Package Ordering Code
SPP20N60C2P-TO220-3-1Q67040-S4320SPB20N60C2P-TO263-3-2
Q67040-S4322
SPA20N60C2
P-TO220-3-31Q67040-S4333
Maximum Ratings Parameter
Symbol Value Unit
SPA
Continuous drain current
T C = 25 °C T C = 100 °C
I D
2013
201)131)A
Pulsed drain current, t p limited by T jmax I D puls 4040A Avalanche energy, single pulse
I D =10A, V DD =50V
E AS 690690mJ
Avalanche energy, repetitive t AR limited by T jmax 2)
I D =20A, V DD =50V
E AR 11Avalanche current, repetitive t AR limited by T jmax I AR
2020A Reverse diode d v /d t
I S = 20 A, V DS < V DD , d i /d t =100A/μs, T jmax =150°C
d v /d t 66V/ns Gat
e source voltage
V GS ±20±20V Gate source voltage AC (f >1Hz)V GS ±30
±30
Power dissipation, T C = 25°C
P tot
20834.5
W
SPP_B
Thermal Characteristics
Parameter Symbol Values Unit
min.typ.max. Characteristics
Thermal resistance, junction - case R thJC --0.6K/W Thremal resistance, junction - case, FullPAK R thJC_FP-- 3.6 Thermal resistance, junction - ambient, leaded R thJA--62 Thermal resistance, junction - ambient, FullPAK R thJA_FP--80
SMD version, device on PCB: @ min. footprint
@ 6 cm2 cooling area 3)R thJA
-
-
-
35
62
-
Linear derating factor-- 1.67W/K Linear derating factor, FullPAK--0.28 Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T sold --260°C
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V GS=0V, I D=0.25mA
V(BR)DSS600--V Drain-source avalanche breakdown voltage
V GS=0V, I D=20A
V(BR)DS-700-
Gate threshold voltage, V GS = V DS
I D=1mA
V GS(th) 3.5 4.5 5.5
Zero gate voltage drain current V DS = 600 V, V GS = 0 V, T j = 25 °C V DS = 600 V, V GS = 0 V, T j = 150 °C I DSS
-
-
0.1
-
1
100
μA
Gate-source leakage current
V GS=20V, V DS=0V
I GSS--100nA Drain-source on-state resistance
V GS=10V, I D=13A, T j=25°C
R DS(on)-0.160.19?
Gate input resistance
f = 1 MHz, open drain
R G-0.54-
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min.typ.max. Characteristics
Transconductance g fs V DS≥2*I D*R DS(on)max,
I D=13A
-12-S
Input capacitance C iss V GS=0V, V DS=25V,
f=1MHz -3000-pF
Output capacitance C oss-1170-Reverse transfer capacitance C rss-28-
Effective output capacitance,4) energy related C o(er)V GS=0V,
V DS=0V to 480V
-83-
Effective output capacitance,5)
time related
C o(tr)-160-
Turn-on delay time t d(on)V DD=380V, V GS=0/13V,
I D=20A,
R G=3.6?, T j=125°C -21-ns
Rise time t r-51-
Turn-off delay time t d(off)-5684
Fall time t f-69
Gate Charge Characteristics
Gate to source charge Q gs V DD=350V, I D=20A-21-nC Gate to drain charge Q gd-46-
Gate charge total Q g V DD=350V, I D=20A,
V GS=0 to 10V
-79103
Gate plateau voltage V(plateau)V DD=350V, I D=20A-8-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E AR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air.
4C
o(er)
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5C
o(tr)
is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min.typ.max. Characteristics
Inverse diode continuous
forward current
I S T C=25°C--20A
Inverse diode direct current,
pulsed
I SM--40 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2V
Reverse recovery time t rr V R=350V, I F=I S ,
d i F/d t=100A/μs -6101040ns
Reverse recovery charge Q rr-12-μC Peak reverse recovery current I rrm-48-A Peak rate of fall of reverse
recovery current
di rr/dt T j=25°C-1500-A/μs
1 Power dissipation P tot = f (T C)
P
t
o
t
2 Power dissiaption FullPAK
P tot = f (T C)
P
t
o
t
3 Safe operating area
I D = f ( V DS )
parameter : D
= 0 , T C=25°C
3
I
D
4 Safe operating area FullPAK
I D = f (V DS)
parameter: D = 0,
T C = 25°C
3
I
D
5 Transient thermal impedance Z thJC = f (t p )parameter: D = t p /T
10 10 10 10 10 K/W Z t h J C
6 Transient thermal impedance FullPAK Z thJC = f (t p )parameter: D = t p /t
1
10 10 10 10 10 K/W
Z t h J C
7 Typ. output characteristic I D
= f (V DS ); T j =25°C parameter: t p = 10 μs, V GS
I
D
8 Typ. output characteristic I D = f (V DS ); T j =150°C parameter:
t p = 10 μs, V GS
I D
9 Typ. drain-source on resistance R DS(on)=f(I D)
parameter: T j=150°C, V GS
R
D
S
(
o
n
)
10 Drain-source on-state resistance
R DS(on) =
f (T j)
parameter : I D = 13 A, V GS = 10 V
SPP20N60C2
R
D
S
(
o
n
)
11 Typ. transfer characteristics
I D= f ( V GS );
V DS≥ 2 x I D x R DS(on)max
parameter: t p = 10 μs
I
D
12 Typ. gate charge
V GS= f (Q Gate)
parameter: I = 20 A pulsed
V
G
S
13 Forward characteristics of body diode
I F = f (V SD)
parameter: T
, t p = 10 μs
I
F
14 Typ. switching time
t = f (I D), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, R G=3.6?
15 Typ. switching time
t = f (R G), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, I D=20A
10
10
10
10
ns
t
16 Typ. switching losses1)
E =
f (I D), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, R G=3.6?
mWs
E
17 Typ. switching losses1)
E = f(R G), inductive load, T j=125°C par.: V DS=380V, V GS=0/+13V,I D=20A
mWs
E
18 Avalanche SOA
I AR = f (
t AR)
par.: T j≤ 150 °C
4
I
A
R
19 Avalanche energy
E AS = f (T
j)
par.: I D = 10 A, V DD = 50 V
mJ
750
E
A
S
20 Drain-source breakdown voltage
V(BR)DSS = f (T j)
SPP20N60C2
V
(
B
R
)
D
S
S
21 Avalanche power losses P AR = f (f )
parameter: E AR =1mJ
6
W
P A R
22 Typ. capacitances C = f (V DS )
parameter: V GS =0V, f =1 MHz
23 Typ. C oss stored energy E oss =f (V
DS )
μJ
14
E o s s
Definition of diodes switching characteristics
P-TO-220-3-1
All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3
P-TO-263-3-1 (D2-PAK)
1)
Typical
All metal surfaces: tin plated, except area of cut.
Metal surface min. x=7.25, y=6.9
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
? Infineon Technologies AG 1999
All Rights Reserved.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
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