Characteristic 特性参数
Symbol 符号 Rating 额定值 Unit 单位 Collector-Emitter Voltage 集电极-发射极电压V CEO 40 Vdc
Collector-Base Voltage 集电极-基极电压 V CBO 30 Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5 Vdc Collector Current(DC)集电极电流-直流 I C 3 Adc Collector Current(Pulse)集电极电流-脉冲
I CP 7 Adc Base Current 基极电流
I B 0.6 Adc Collector Power Dissipation 集电极耗散功率
P C 500 mW
Junction Temperature 结温
T j 150
℃ Storage Temperature Range 储存温度
T stg
-55～150 ℃ EPITAXIAL SILICON Transistor FHD882
FEATURES 特征
·High current output up to 3A; ·Low saturation voltage; ·Complement to 2SB772;
·NPN EPITAXIAL SILICON TRANSISTOR. Applications 应用
·Audio power amplifier; ·DC-DC converter; ·Voltage regulator.
ABSOLUTE MAXIMUM RATINGS 额定值 DEVICE MARKING 打标
SOT-89 SOT-223 FHD882R=DR(60～120),FHD882Q=DQ(100～200).FHD882P=DP(160～320), FHD882E=DE(200～400)
ELECTRICAL CHARACTERISTICS 电特性(T A =25℃ unless otherwise noted 如无特殊说明，温度为25℃)
Characteristic 特性参数 Symbol 符号 Test Condition 测试条件
Min 最小值
Type 典型值
Max 最大值
Unit 单位
Collector Cutoff Current
集电极截止电流 I CBO V CB =30V,I E =0 — — 1000 nA Emitter Cutoff Current 发射极截止电流 I EBO V EB =3V,I C =0 — — 1000 nA V CE =2V,I C =20mA 30 — — —
DC Current Gain 直流电流增益
h FE
V CE =2V,I C =1A 60
150 400 Collector-Emitter Saturation
Voltage 基极-发射极饱和压降
V CE(sat)
I C =2A,I B =200mA — 0.3 0.5 V Base-Emitter Saturation
Voltage 集电极-发射极饱和压降 V BE(sat)
I C =2A,I B =200mA — 1 2 V Transition Frequency 特征频率 f T V CE =5V,I E =0.1A, — 140 — MHz
Collector Output Capacitance
输出电容 C ob
V CB =10V,I E =0,
f=1MHz
— 45 — pF
SOT-89封装外形尺寸（SOT-89 DIMENSION）
编带包装规格（SOT-89 TAPE AND REEL SPECIFICATION AND PACKING SPECIFICATION）
SOT-223封装外形尺寸（SOT-223 DIMENSION）
TO-252封装外形尺寸（TO-252 DIMENSION）