IRF3205PbF
HEXFET ? Power MOSFET
10/31/03
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
–––0.75R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θJA
Junction-to-Ambient
–––
62
Thermal Resistance
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Description
Advanced HEXFET ?reliable device for use in a wide variety of applications.acceptance throughout the industry.
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
175°C Operating Temperature Fast Switching
Fully Avalanche Rated
Lead-Free
Parameter
Max.Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 110
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 80A I DM
Pulsed Drain Current 390P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage ± 20V I AR Avalanche Current
62A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew
10 lbf?in (1.1N?m)
PD-94791
IRF3205PbF
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Source-Drain Ratings and Characteristics
Starting T J = 25°C, L = 138μH
R G = 25?, I AS = 62A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )Notes:
I SD ≤ 62A, di/dt ≤ 207A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A. This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T J = 175°C.
IRF3205PbF
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Vs. Temperature
IRF3205PbF
4
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Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
V DS , Drain-to-Source Voltage (V)
01000
2000
3000
4000
5000
6000
C , C a p a c i t a n c e (p F )
IRF3205PbF
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Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
DD
IRF3205PbF
6
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V
DS
Current Sampling Resistors
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms
I AS
Vs. Drain Current
V DD
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Fig 14. For N-Channel HEXFETS
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
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Qualification Standards can be found on IR’s Web site.
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at https://www.doczj.com/doc/3718000093.html, for sales contact information .10/03