数字集成电路：电路系统与设计(第二版) (8)

数字集成电路-电路系统与设计第二版课程设计
一、课程设计介绍
数字集成电路是现代电路设计中的重要组成部分，也是计算机科学与工程的重要分支。

本课程设计旨在通过对数字集成电路的系统与设计进行探究，并结合具体的案例来设计和实现数字集成电路，使学生能够熟悉数字集成电路的基本原理、设计方法和实现技术。

本课程设计主要包含以下内容：
1.数值系统和编码
2.逻辑功能设计：组合逻辑电路和时序逻辑电路
3.集成电路设计方法和流程
4.VHDL和FPGA实现数字逻辑电路
5.数字信号处理器
通过本次课程设计，学生将掌握数字集成电路的系统性设计思路和实现方法，具备数字电路设计的基本能力和实际操作技术，能够针对具体应用场景提出解决方案，实现数字电路的设计、验证和调试。

二、课程设计要求
1. 课程设计题目
本次课程设计的题目为“4位计数器设计”。

2. 软件工具
VHDL编程软件和EDA工具
1。

数字集成电路分析与设计一、课程基本情况课程编号40260103开课单位微纳电子学系课程名称中文名称数字集成电路分析与设计英文名称Digital Integrated Circuit Analysis and Design教学目的与重点教学目的：1）让学生掌握数字集成电路的工作原理与分析方法2）让学生掌握数字集成电路与系统的设计流程和基本方法3）培养学生实际设计数字集成电路与系统的能力教学重点：1） CMOS反相器的特性，数字集成电路分析与设计的关键问题2）组合逻辑链的性能优化3）互连线的延时模型与分析4）同步时序电路的分析和设计5）数据通路运算单元的分析与设计6）存储器的工作原理的理解与分析课程负责人刘雷波吴行军课程类型□文化素质课□公共基础课□学科基础课□专业基础课■专业课□其它教学方式■讲授为主□实验/实践为主□专题讨论为主□案例教学为主□自学为主□其它授课语言■中文口中文+英文（英文授课＞50%）□英文□其他外语学分学时学分 3 总学时48考核方式及成绩评定标准作业：15%,课程设计：15%,期中考试（闭卷）：30%,期末考试（闭卷）：40%教材及主要参考书中文外文教材数字集成电路一电路、系统与设计（第二版）,JanM.Rabaey等著，周润德等译，电子工业出版社。

Jan M. Rabaey etc. “Digital Integrated Circuits , A Design Perspective (Second Edition)", Prentice Hall , 2003.主要参考书CMOS数字集成电路一分析与设计（第3版）,Sung-Mo Kang等著，王志功等译，清华大学出版社（影Sung-Mo Kang, Yusuf Leblebici,"CMOS Digital IntegratedCircuits-Analysis and Design(ThirdEdition)".三、课程主要教学内容9.4高级互连技术9. 5综述9.6总结第10章存储器（6学时）（教材第12章）10.1分类10.2结构10.3内核--- 存储单元和阵列10.4外围电路10.5可靠性10.6总结。

数字集成电路--电路、系统与设计（第⼆版）课后练习题第六.Digital Integrated Circuits - 2nd Ed 11 DESIGN PROJECT Design, lay out, and simulate a CMOS four-input XOR gate in the standard 0.25 micron CMOS process. You can choose any logic circuit style, and you are free to choose how many stages of logic to use: you could use one large logic gate or a combination of smaller logic gates. The supply voltage is set at 2.5 V! Your circuit must drive an external 20 fF load in addition to whatever internal parasitics are present in your circuit. The primary design objective is to minimize the propagation delay of the worst-case transition for your circuit. The secondary objective is to minimize the area of the layout. At the very worst, your design must have a propagation delay of no more than 0.5 ns and occupy an area of no more than 500 square microns, but the faster and smaller your circuit, the better. Be aware that, when using dynamic logic, the precharge time should be made part of the delay. The design will be graded on themagnitude of A × tp2, the product of the area of your design and the square of the delay for the worst-case transition.。

数字集成电路是现代电子产品中不可或缺的一部分，它们广泛应用于计算机、手机、汽车、医疗设备等领域。

数字集成电路通过在芯片上集成大量的数字电子元件，实现了电子系统的高度集成和高速运算。

本文将从电路、系统与设计三个方面探讨数字集成电路的相关内容。

一、数字集成电路的电路结构数字集成电路的电路结构主要包括逻辑门、寄存器、计数器等基本元件。

其中，逻辑门是数字集成电路中最基本的构建元件，包括与门、或门、非门等，通过逻辑门的组合可以实现各种复杂的逻辑功能。

寄存器是用于存储数据的元件，通常由触发器构成；而计数器则可以实现计数和计时功能。

这些基本的电路结构构成了数字集成电路的基础，为实现各种数字系统提供了必要的支持。

二、数字集成电路与数字系统数字集成电路是数字系统的核心组成部分，数字系统是以数字信号为处理对象的系统。

数字系统通常包括输入输出接口、控制单元、运算器、存储器等部分，数字集成电路在其中充当着处理和控制信号的角色。

数字系统的设计需要充分考虑数字集成电路的特性，包括时序和逻辑的正确性、面积和功耗的优化等方面。

数字集成电路的发展也推动了数字系统的不断完善和创新，使得数字系统在各个领域得到了广泛的应用。

三、数字集成电路的设计方法数字集成电路的设计过程通常包括需求分析、总体设计、逻辑设计、电路设计、物理设计等阶段。

需求分析阶段需要充分了解数字系统的功能需求，并将其转化为具体的电路规格。

总体设计阶段需要根据需求分析的结果确定电路的整体结构和功能分配。

逻辑设计阶段是将总体设计转化为逻辑电路图，其中需要考虑逻辑函数、时序关系、并行性等问题。

电路设计阶段是将逻辑电路图转化为电路级电路图，包括门电路的选择和优化等。

物理设计阶段则是将电路级电路图转化为实际的版图设计，考虑布线、功耗、散热等问题。

在每个设计阶段都需要充分考虑电路的性能、面积、功耗等指标，以实现设计的最优化。

结语数字集成电路作为现代电子系统的关键组成部分，对于数字系统的功能和性能起着至关重要的作用。

1Chapter 4 Problem SetChapter 4Problems1.[M, None, 4.x] Figure 0.1 shows a clock-distribution network. Each segment of the clock net-work (between the nodes) is 5 mm long, 3 μm wide, and is implemented in polysilicon. Ateach of the terminal nodes (such as R ) resides a load capacitance of 100 fF.a.Determine the average current of the clock driver, given a voltage swing on the clock linesof 5 V and a maximum delay of 5 nsec between clock source and destination node R . Forthis part, you may ignore the resistance and inductance of the networkb.Unfortunately the resistance of the polysilicon cannot be ignored. Assume that eachstraight segment of the network can be modeled as a Π-network. Draw the equivalent cir-cuit and annotate the values of resistors and capacitors.c.Determine the dominant time-constant of the clock response at node R .2.[C, SPICE, 4.x] You are designing a clock distribution network in which it is critical to mini-mize skew between local clocks (CLK 1, CLK 2, and CLK 3). You have extracted the RC net-work of F igure 0.2, which models the routing parasitics of your clock line. Initially, you notice that the path to CLK 3 is shorter than to CLK 1 or CLK 2. In order to compensate for this imbalance, you insert a transmission gate in the path of CLK 3 to eliminate the skew.a.Write expressions for the time-constants associated with nodes CLK 1,CLK 2 and CLK 3.Assume the transmission gate can be modeled as a resistance R 3.b.If R 1 = R 2 = R 4 = R 5 = R and C 1 = C 2 = C 3 = C 4 = C 5 = C , what value of R 3 is required to balance the delays to CLK 1, CLK 2, and CLK 3?c.For R =750Ω and C =200fF, what (W /L )’s are required in the transmission gate to elimi-nate skew? Determine the value of the propagation delay.d.Simulate the network using SPICE, and compare the obtained results with the manually obtained numbers.3.[M, None, 4.x]Consider a CMOS inverter followed by a wire of length L . Assume that in thereference design, inverter and wire contribute equally to the total propagation delay t pref . Youmay assume that the transistors are velocity-saturated. The wire is scaled in line with the idealwire scaling model . Assume initially that the wire is a local wire .a.Determine the new (total) propagation delay as a a function of t p ref , assuming that technol-ogy and supply voltage scale with a factor 2. Consider only first-order effects.b.Perform the same analysis, assuming now that the wire scales a global wire , and the wire length scales inversely proportional to the technology.Figure 0.1Clock-distribution network.SR2Chapter 4 Problem Setc.Repeat b, but assume now that the wire is scaled along the constant resistance model. You may ignore the effect of the fringing capacitance.d.Repeat b, but assume that the new technology uses a better wiring material that reduces the resistivity by half, and a dielectric with a 25% smaller permittivity.e.Discuss the energy dissipation of part a. as a function of the energy dissipation of the orig-inal design E ref .f.Determine for each of the statements below if it is true, false, or undefined, and explain in one line your answer. - When driving a small fan-out, increasing the driver transistor sizes raises the short-circuit power dissipation. - Reducing the supply voltage, while keeping the threshold voltage constant decreases the short-circuit power dissipation.- Moving to Copper wires on a chip will enable us to build faster adders.- Making a wire wider helps to reduce its RC delay.- Going to dielectrics with a lower permittivity will make RC wire delay more impor-tant.4.[M, None, 4.x] A two-stage buffer is used to drive a metal wire of 1 cm. The first inverter is of minimum size with an input capacitance Ci=10 fF and an internal propagation delay t p0=50 ps and load dependent delay of 5ps/fF. The width of the metal wire is 3.6 μm. The sheet resis-tance of the metal is 0.08 Ω/, the capacitance value is 0.03 fF/μm 2and the fringing field capacitance is 0.04fF/μm.a.What is the propagation delay of the metal wire?pute the optimal size of the second inverter. What is the minimum delay through the buffer?c.If the input to the first inverter has 25% chance of making a 0-to-1 transition, and the whole chip is running at 20MHz with a 2.5 supply voltage, then what’s the power con-sumed by the metal wire?5.[M, None, 4.x]To connect a processor to an external memory an off -chip connection is neces-sary. The copper wire on the board is 15 cm long and acts as a transmission line with a charac-teristic impedance of 100Ω.(See F igure 0.3). The memory input pins present a very highimpedance which can be considered infinite. The bus driver is a CMOS inverter consisting ofvery large devices: (50/0.25) for the NMOS and (150/0.25) for the PMOS, where all sizes areClock CLK 1CLK 2CLK 3R 1R 2R 5R 4R 3Model as:Figure 0.2RC clock-distribution network.driver C 1C 3C 4C 5C 2Digital Integrated Circuits - 2nd Ed3 in μm. The minimum size device, (0.25/0.25) for NMOS and (0.75/0.25) for PMOS, has theon resistance 35 kΩ.a.Determine the time it takes for a change in the signal to propagate from source to destina-tion (time of flight). The wire inductance per unit length equals 75*10-8 H/m.b.Determine how long it will take the output signal to stay within 10% of its final value. Youcan model the driver as a voltage source with the driving device acting as a series resis-tance. Assume a supply and step voltage of 2.5V. Hint: draw the lattice diagram for thetransmission line.c.Resize the dimensions of the driver to minimize the total delay.L=15cmMemoryZ=100ΩFigure 0.3The driver, the connecting copper wire and thememory block being accessed.6.[M, None, 4.x] A two stage buffer is used to drive a metal wire of 1 cm. The first inverter is aminimum size with an input capacitance C i=10 fF and a propagation delay t p0=175 ps whenloaded with an identical gate. The width of the metal wire is 3.6 μm. The sheet resistance ofthe metal is 0.08 Ω/, the capacitance value is 0.03 fF/μm2 and the fringing field capacitanceis 0.04 fF/μm.a.What is the propagation delay of the metal wire?pute the optimal size of the second inverter. What is the minimum delay through thebuffer?7.[M, None, 4.x] For the RC tree given in Figure 0.4 calculate the Elmore delay from node A tonode B using the values for the resistors and capacitors given in the below in Table 0.1.Figure 0.4RC tree for calculating the delay4Chapter 4 Problem SetTable 0.1Values of the components in the RC tree of Figure 0.4Resistor Value(Ω)Capacitor Value(fF)R10.25C1250R20.25C2750R30.50C3250R4100C4250R50.25C51000R6 1.00C6250R70.75C7500R81000C82508.[M, SPICE, 4.x] In this problem the various wire models and their respective accuracies willbe studied.pute the 0%-50% delay of a 500um x 0.5um wire with resistance of 0.08 Ω/,witharea capacitance of 30aF/um2, and fringing capacitance of 40aF/um. Assume the driverhas a 100Ω resistance and negligible output capacitance.•Using a lumped model for the wire.•Using a PI model for the wire, and the Elmore equations to find tau. (see Chapter 4, figure4.26).•Using the distributed RC line equations from Chapter 4, section 4.4.4.pare your results in part a. using spice (be sure to include the source resistance). Foreach simulation, measure the 0%-50% time for the output•First, simulate a step input to a lumped R-C circuit.•Next, simulate a step input to your wire as a PI model.•Unfortunately, our version of SPICE does not support the distributed RC model as described in your book (Chapter 4, section 4.5.1). Instead, simulate a step input to yourwire using a PI3 distributed RC model.9.[M, None, 4.x] A standard CMOS inverter drives an aluminum wire on the first metal layer.Assume Rn=4kΩ, Rp=6kΩ. Also, assume that the output capacitance of the inverter is negli-gible in comparison with the wire capacitance. The wire is .5um wide, and the resistivity is0.08 Ω/..a.What is the "critical length" of the wire?b.What is the equivalent capacitance of a wire of this length? (For your capacitance calcula-tions, use Table 4.2 of your book , assume there’s field oxide underneath and nothingabove the aluminum wire)Digital Integrated Circuits - 2nd Ed510.[M, None, 4.x] A 10cm long lossless transmission line on a PC board (relative dielectric con-stant = 9, relative permeability = 1) with characteristic impedance of 50Ω is driven by a 2.5Vpulse coming from a source with 150Ω resistance.a.If the load resistance is infinite, determine the time it takes for a change at the source toreach the load (time of flight).Now a 200Ω load is attached at the end of the transmission line.b.What is the voltage at the load at t = 3ns?c.Draw lattice diagram and sketch the voltage at the load as a function of time. Determinehow long does it take for the output to be within 1 percent of its final value.11.[C, SPICE, 4.x] Assume V DD =1.5V . Also, use short-channel transistor models forhand analy-sis.a.The Figure 0.5 shows an output driver feeding a 0.2 pF effective fan-out of CMOS gates through a transmission line. Size the two transistors of the driver to optimize the delay.Sketch waveforms of V S and V L , assuming a square wave input. Label critical voltages and times.b.Size down the transistors by m times (m is to be treated as a parameter). Derive a first order expression for the time it takes for V L to settle down within 10% of its final voltage pare the obtained result with the case where no inductance is associated with the wire.Please draw the waveforms of V L for both cases, and comment.e the transistors as in part a). Suppose C L is changed to 20pF. Sketch waveforms of V S and V L , assuming a square wave input. Label critical voltages and instants.d.Assume now that the transmission line is lossy. Perform Hspice simulation for three cases:R=100 Ω/cm; R=2.5 Ω/cm; R=0.5 Ω/cm. Get the waveforms of V S , V L and the middle point of the line. Discuss the results.12.[M, None, 4.x] Consider an isolated 2mm long and 1μm wide M1(Metal1)wire over a silicon substrate driven by an inverter that has zero resistance and parasitic output capccitance. How will the wire delay change for the following cases? Explain your reasoning in each case.a.If the wire width is doubled.b.If the wire length is halved.c.If the wire thickness is doubled.d.If thickness of the oxide between the M1 and the substrate is doubled.13.[E, None, 4.x] In an ideal scaling model, where all dimensions and voltages scale with a fac-tor of S >1 :L=350nH/m 10cm C=150pF/m inV DDV DD V S V LC L =0.2pF Figure 0.5Transmission line between two inverters6Chapter 4 Problem Seta.How does the delay of an inverter scale?b.If a chip is scaled from one technology to another where all wire dimensions,including thevertical one and spacing, scale with a factor of S, how does the wire delayscale? How doesthe overall operating frequency of a chip scale?c.Repeat b) for the case where everything scales, except the vertical dimension of wires (itstays constant).。

数字集成电路：电路系统与设计(第二版)简介《数字集成电路：电路系统与设计(第二版)》是一本介绍数字集成电路的基本原理和设计方法的教材。

本书的内容覆盖了数字电路的基础知识、逻辑门电路、组合逻辑电路、时序逻辑电路、存储器和程序控制电路等方面。

通过学习本书，读者可以了解数字集成电路的概念、设计方法和实际应用。

目录1.数字电路基础知识 1.1 数字电路的基本概念 1.2 二进制系统与数制转换 1.3 逻辑运算与布尔代数2.逻辑门电路 2.1 与门、或门、非门 2.2 与非门、或非门、异或门 2.3 多输入门电路的设计方法3.组合逻辑电路 3.1 组合逻辑电路的基本原理 3.2 组合逻辑电路的设计方法 3.3 编码器和译码器4.时序逻辑电路 4.1 时序逻辑电路的基本原理 4.2 同步时序电路的设计方法 4.3 异步时序电路的设计方法5.存储器电路 5.1 存储器的基本概念 5.2 可读写存储器的设计方法 5.3 只读存储器的设计方法6.程序控制电路 6.1 程序控制电路的基本概念 6.2 程序控制电路的设计方法 6.3 微程序控制器的设计方法内容概述1. 数字电路基础知识本章主要介绍数字电路的基本概念，包括数字电路与模拟电路的区别、数字信号的表示方法以及数制转换等内容。

此外，还介绍了数字电路中常用的逻辑运算和布尔代数的基本原理。

2. 逻辑门电路逻辑门电路是数字电路中的基本组成单元，本章主要介绍了与门、或门、非门以及与非门、或非门、异或门等逻辑门的基本原理和组成。

此外，还介绍了多输入门电路的设计方法，以及逻辑门电路在数字电路设计中的应用。

3. 组合逻辑电路组合逻辑电路是由逻辑门电路组成的，本章主要介绍了组合逻辑电路的基本原理和设计方法。

此外，还介绍了编码器和译码器的原理和应用，以及在数字电路设计中的实际应用场景。

4. 时序逻辑电路时序逻辑电路是在组合逻辑电路的基础上引入了时序元件并进行时序控制的电路。

本章主要介绍了时序逻辑电路的基本原理和设计方法，包括同步时序电路和异步时序电路的设计。