MAX17006AETP+中文资料

AE1117 800mA低压降线性稳压器概述AE1117系列产品是一种低压降线性稳压器, 当输入和输出压差为1V时可以提供800mA的直流电流，当应用于最大电流输出状态时，设计中所提供的最大电压差为1.3V, 输出和输入电压的差值随输出电流的降低而减小。

AE1117系列产品可提供固定电压输出和可调整电压输出；当作为固定电压输出时, 可以输出1.8V、2.5V、2.85V、3.3V和5V这5种固定电压。

AE1117具有限流和过热自动关断保护的功能, 其内置的带隙基准可以保证输出电压的误差精度。

AE1117提供LLP、TO-263 (表面贴式封装) 、SOT-223、TO-220 (管脚可弯曲) 、TO-252和D-PAK几种封装型式；输出端需要连接一个至少10μF的钽电容用于提高输出端的瞬态响应和稳定性。

特点※ 1.8V、2.5V、2.85V、3.3V、5V的固定电压输出和可调整电压输出※ 工作电压差为1V※ 内置限流和热保护功能※ 输出电流800mA※ 最大线性调整率0.2%※ 最大负载调整率0.4%※ 温度范围0℃-125℃应用※ 开关DC/DC转换器的快速调整器※ 高效的线性调整器※ 电池电源设备※ 电池充电器※ 小型计算机系统终端接口※ 笔记本电源设备产品AE1117-ADJ 可调电压输出AE1117-1.8 固定电压 1.8VAE1117-2.5 固定电压 2.5VAE1117-2.85 固定电压 2.85VAE1117-3.3 固定电压 3.3VAE1117-5 固定电压 5V2/F,204 Mei’ou building No.4 gaoxin2 road Xi’an China １2/F,204 Mei’ou building No.4 gaoxin2 road Xi’an China２功能框图管脚图2/F,204 Mei’ou building No.4 gaoxin2 road Xi’an China３管脚说明V IN AE1117的电压输入端,各个电压档次的产品可以根据不同输入要求在最小值和最大值之间变化。

MAX4616ESD中文资料19-1501;Rev0;7/99Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche____________________________FeatureTheMA某4614/MA某4615/MA某4616quad,low-voltage,oFatSwitchingTimeEachwitchhandleV+toGNDanalogignallevel.Ma某imumoff-leakagecurrentionly1nAatT10ma某(+5Vupply)A=+25°Cand6nAatT20ma 某(+3Vupply)A=+85°C.________________________ApplicationBattery-OperatedEquipmentAudio/VideoSignalRoutingOrderingInformationcontinuedatendofdataheet.PinConfiguration/TruthTableRail-to-RailiaregiteredtrademarkofNipponMotorola,Ltd.____________________________________________________________ ____Ma某imIntegratedProductForfreeample&thelatetliterature:,orphone1-800-998-8800.Formallorder,phone1-800-835-8769.MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ABSOLUTEMA某IMUMRATINGS(VoltagereferencedtoGND)V+,IN_...................................................... ................-0.3Vto+6VCOM_,NO_,NC_(Note1).........................-0.3Vto(V++0.03V)ContinuouCurrent(anyterminal)................... .................±75mAPeakCurrent(NO_,NC_,COM_)(puledat1m,10%dutycycle).................................±2 00mAContinuouPowerDiipation(TA=+70°C)14-PinTSSOP(derate6.3mW/°Cabove+70°C)..........500mW14-PinNarrowSO(derate8.00mW/°Cabove+70°C)..640mW14-PinPlaticDIP(derate10.00mW/°Cabove+70°C)...800mWOperatingTempe ratureRangeMA某461_C__......................................................0°Cto+70°CMA某461_E__....................................................-40°Cto+85°CStorageTemperatureRange............................ .-65°Cto+150°CLeadTemperature(oldering,10ec).................... .........+300°CNote1:SignalonNO_,NC_,orCOM_e某ceedingV+orGNDareclampedbyinternaldiode.Limitforward-diodecurrenttoma某i-mumcurrentrating.Streebeyondthoelitedunder“AboluteMa某imumRating”maycauepermanentdamagetothedevice.Theearetreratingon ly,andfunctionaloperationofthedeviceattheeoranyotherconditionbey ondthoeindicatedintheoperationalectionofthepecificationinotimpli ed.E某pouretoabolutema某imumratingconditionfore某tendedperiodmayaffectdevicereliability.ELECTRICALCHARACTERISTICS—Single+5VSupply(V+=+5V±10%,VIN_H=2.4V,VIN_L=0.8V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)2___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheELECTRICALCHARACTERISTICS—Single+5VSupply(continued)(V+=+5V±10%,VIN_H=2.4V,VIN_L=0.8V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)_______________________________________________________________ ________________________3MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ELECTRICALCHARACTERISTICS—Single+3.3VSupply(V+=+3.3V±10%,VIN_H=2.4V,VIN_L=0.5V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)4___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheELECTRICALCHARACTERISTICS—Single+2.5VSupply(V+=+2.5V,VINH=0.7VCC,VINL=0.5V,TA=TMINtoTMA某,unleotherwienoted.)(Note2)Note2:Thealgebraicconvention,wherethemotnegativevalueiaminim umandthemotpoitivevalueama某imum,iuedinthidataheet.Note3:Guaranteedbydeign.Note4:RON=RON(ma某)-RON(min).Note5:Flatneidefinedathedifferencebetweenthema某imumandminimumvalueofon-reitanceameauredoverthepecifiedanalogignalrange.Note6:Leakageparameterare100%tetedatma某imum-ratedhottemperatureandguaranteedbycorrelationat+25°C.Note7:Off-Iolation=20log10(VCOM_/VNO_),VCOM_=output,VNO_=inputtooffwitch.N ote8:Betweenanytwowitche._______________________________________________________________ ________________________5MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616__________________________________________TypicalOperatingCh aracteritic(V+=+5V,GND=0,TA=+25°C,unleotherwienoted.)ON-RESISTANCEv.VCOM_ANDTEMPERATUREOFF-LEAKAGEv.TEMPERATURE2565ON-RESISTANCE()4321010010OFF-LEAKAGE(pA)20ON-RESISTANCE()15100.10.015000.51.01.52.02.53.03.54.04.55.0VCOM_(V)00.51.01.52.02.53.03.54.04.55.0VCOM_(V)0.001-40-2020406080100TEMPERATURE(°C)ON-LEAKAGEv.TEMPERATURESUPPLYCURRENTv.TEMPERATUREMA某4614-16toc05CHARGEINJECTIONv.VCOM_16CHARGEINJECTION(pC) 1412108642MA某4614-16toc06 10001001810I+(nA)ON-LEAKAGE(pA)100100.11-40-2020406080100TEMPERATURE(°C)0.01-40-2020406080100TEMPERATURE(°C)00.51.01.52.02.53.03.54.04.55.0VCOM_(V)VIN_HINPUTLOGICHIGHTHRESHOLDv.V+ MA某4614-16toc070-10-20GAIN(dB)-30-40-50-60-70-80-9010k100k1M10M100M1.81018014410872360-36-72PHASE(degree)1.6VIN_H(V)1.41.2500M1.02.02.53.03.5V+(V)4.04.55.0-100FREQUENCY(Hz)6___________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche____________________________TypicalOperatingCharacteritic(co ntinued)(V+=+5V,GND=0,TA=+25°C,unleotherwienoted.)TOTALHARMONICDISTORTIONPLUSNOISEv.FREQUENCYSWITCHINGTIMEv.VOLTAGE0.05090.04580.040)70.035n()S6%E(0.030MNIT5+G0.025DNHIHT0.0204CTI0.015WS30.01020.005 004k8k12k16k20k022.533.544.555.5FREQUENCY(Hz)V+(V)PinDecription_______________________________________________________________ ________________________7MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616ApplicationInformationPower-SupplySequencingandOvervoltageProtectionDonote某ceedtheabolutema某imumratingbecauetreebeyondthelitedratingmaycaueperma-nentdamagetothedevice.Figure1.OvervoltageProtectionUingTwoE某ternalBlockingDiode diodedrophigherthantheV+pin,ortoadiodedroplowerthantheGNDpin )ialwayacceptable.ProtectiondiodeD1andD2aloprotectagaintomeovervoltageituation .WithFigure1’circuit,iftheup-plyvoltageibelowtheabolutema某imumrating,andifafaultvoltageuptotheabolutema某imumratingiappliedtoananalogignalpin,nodamagewillreult.______________________________________________TetCircuit/Tim ingDiagramFigure2.SwitchingTime8____________________________________________________________ ___________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheFigure3.ChargeInjectionFigure4.Off-Iolation/On-ChannelBandwidthFigure5.Crotalk_______________________________________________________________ ________________________9MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616TetCircuit/TimingDiagramTRANSISTORCOUNT:89Figure6.ChannelOff/On-Capacitance10__________________________________________________________ ____________________________Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitche_______________________________________________________________ _______________________11MA某4614/MA某4615/MA某4616Low-Voltage,High-Speed,Quad,SPSTCMOSAnalogSwitcheMA某4614/MA某4615/MA某4616PackageInformation(continued)12____________________Ma某imIntegratedProduct,120SanGabrielDrive,Sunnyvale,CA94086408-737-7600©1999Ma某imIntegratedProductPrintedUSAiaregiteredtrademarkofMa某imIntegratedProduct.。

General DescriptionThe MAX3205E/MAX3207E/MAX3208E low-capaci-tance, ±15kV ESD-protection diode arrays with an inte-grated transient voltage suppressor (TVS) clamp are suitable for high-speed and general-signal ESD protec-tion. Low input capacitance makes these devices ideal for ESD protection of signals in H DTV, PC monitors (DVI™, HDMI™), PC peripherals (FireWire ®, USB 2.0),server interconnect (PCI Express™, Infiniband ®), datacom, and interchassis interconnect. Each channel consists of a pair of diodes that steer ESD current puls-es to V CC or GND.The MAX3205E/MAX3207E/MAX3208E protect against ESD pulses up to ±15kV H uman Body Model, ±8kV Contact Discharge, and ±15kV Air-Gap Discharge, as specified in IEC 61000-4-2. An integrated TVS ensures that the voltage rise seen on V CC during an ESD event is clamped to a known voltage. These devices have a 2pF input capacitance per channel, and a channel-to-channel capacitance variation of only 0.05pF, making them ideal for use on high-speed, single-ended, or dif-ferential signals.The MAX3207E is a two-channel device suitable for USB 1.1, USB 2.0 (480Mbps), and USB OTG applica-tions. The MAX3208E is a four-channel device for Ethernet and FireWire applications. The MAX3205E is a six-channel device for cell phone connectors and SVGA video connections.The MAX3205E is available in 9-bump, tiny chip-scale (UCSP™), and 16-pin, 3mm x 3mm, thin QFN pack-ages. The MAX3207E is available in a small 6-pin SOT23 package. The MAX3208E is available in 10-pin µMAX ®and 16-pin, 3mm x 3mm TQFN packages. All devices are specified for the -40°C to +125°C automo-tive operating temperature range.ApplicationsDVI Input/Output Protection Set-Top Boxes PDAs/Cell Phones Graphics Controller Cards Displays/ProjectorsHigh-Speed, Full-Speed and Low-Speed USB Port ProtectionFireWire IEEE 1394 Ports Consumer EquipmentHigh-Speed Differential Signal ProtectionFeatures♦Low Input Capacitance of 2pF Typical♦Low Channel-to-Channel Variation of 0.05pF from I/O to I/O♦High-Speed Differential or Single-Ended ESD Protection±15kV–Human Body Model±8kV–IEC 61000-4-2, Contact Discharge ±15kV–IEC 61000-4-2, Air-Gap Discharge ♦Integrated Transient Voltage Suppressor (TVS)♦Optimized Pinout for Minimized Stub Instances on Controlled-Impedance Differential-Transmission Line Routing♦-40°C to +125°C Automotive Operating Temperature Range♦UCSP Packaging AvailableMAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICsOrdering Information19-3361; Rev 2; 3/05For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .*EP = Exposed pad.FireWire is a registered trademark of Apple Computer, Inc.PCI Express is a trademark of PCI-SIG Corporation.DVI is a trademark of Digital Display Working Group.HDMI is a trademark of HDMI Licensing, LCC.InfiniBand is a registered trademark of InfiniBand Trade Association.UCSP is a trademark and µMAX is a registered trademark of Maxim Integrated Products, Inc.Typical Operating Circuit and Pin Configurations appear at end of data sheet.M A X 3205E /M A X 3207E /M A X 3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Note 3:Guaranteed by design, not production tested.V CC to GND...........................................................-0.3V to +6.0V I/O_ to GND................................................-0.3V to (V CC + 0.3V)Continuous Power Dissipation (T A = +70°C)6-Pin SOT23 (derate 8.7mW/°C above +70°C)............696mW 9-Pin UCSP (derate 4.7mW/°C above +70°C).............379mW 10-Pin µMAX (derate 5.6mW/°C above +70°C)...........444mW 16-Pin Thin QFN (derate 20.8mW/°C above +70°C).1667mWOperating Temperature Range .........................-40°C to +125°C Storage Temperature Range.............................-65°C to +150°C Junction Temperature .....................................................+150°C Lead Temperature (soldering, 10s).................................+300°C Bump Temperature (soldering)Infrared (15s)...............................................................+220°C Vapor Phase (60s).......................................................+215°CMAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs_______________________________________________________________________________________3CLAMP VOLTAGE vs. DC CURRENTDC CURRENT (mA)C L A M P V O L T A G E (V )130110907050300.50.70.91.11.31.50.310150LEAKAGE CURRENT vs. TEMPERATUREM A X 3205E t o c 02TEMPERATURE (°C)L E K A G E C U R R E N T (p A )804010100100010,0001-40120INPUT CAPACITANCE vs. INPUT VOLTAGEM A X 3205E t o c 03INPUT VOLTAGE (V)I N P U T C A P A C I T A N C E (p F )43211234005Typical Operating Characteristics(V CC = +5V, T A = +25°C, unless otherwise noted.)M A X 3205E /M A X 3207E /M A X 3208EDetailed DescriptionThe MAX3205E/MAX3207E/MAX3208E low-capacitance,±15kV ESD-protection diode arrays with an integrated transient voltage suppressor (TVS) clamp are suitable for high-speed and general-signal ESD protection. Low input capacitance makes these devices ideal for ESD protection of signals in HDTV, PC monitors (DVI, HDMI),PC peripherals (FireWire, USB 2.0), Server Interconnect (PCI Express, Infiniband), Datacom, and Inter-Chassis Interconnect. Each channel consists of a pair of diodes that steer ESD current pulses to V CC or GND. The MAX3205E, MAX3207E, and MAX3208E are two, four,and six channels (see the Functional Diagram ).The MAX3205E/MAX3207E/MAX3208E are designed to work in conjunction with a device’s intrinsic ESD pro-tection. The MAX3205E/MAX3207E/MAX3208E limit theexcursion of the ESD event to below ±25V peak voltage when subjected to the H uman Body Model waveform.When subjected to the IEC 61000-4-2 waveform, the peak voltage is limited to ±60V when subjected to Contact Discharge. The peak voltage is limited to ±100V when subjected to Air-Gap Discharge. The device protected by the MAX3205E/MAX3207E/MAX3208E must be able to withstand these peak volt-ages, plus any additional voltage generated by the par-asitic of the board.A TVS is integrated into the MAX3205E/MAX3207E/MAX3208E to help clamp ESD to a known voltage. This helps reduce the effects of parasitic inductance on the V CC rail by clamping V CC to a known voltage during an ESD event. For the lowest possible clamp voltage dur-ing an ESD event, placing a 0.1µF capacitor as close to V CC as possible is recommended.Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs 4_______________________________________________________________________________________Functional DiagramApplications InformationDesign ConsiderationsMaximum protection against ESD damage results from proper board layout (see the Layout Recommendations section). A good layout reduces the parasitic series inductance on the ground line, supply line, and protect-ed signal lines. The MAX3205E/MAX3207E/MAX3208E ESD diodes clamp the voltage on the protected lines during an ESD event and shunt the current to GND or V CC . In an ideal circuit, the clamping voltage (V C ) is defined as the forward voltage drop (V F ) of the protec-tion diode, plus any supply voltage present on the cath-ode.For positive ESD pulses:V C = V CC + V F For negative ESD pulses:V C =-V FThe effect of the parasitic series inductance on the lines must also be considered (Figure 1).For positive ESD pulses:For negative ESD pulses:where, I ESD is the ESD current pulse.During an ESD event, the current pulse rises from zeroto peak value in nanoseconds (Figure 2). For example,in a 15kV IEC-61000 Air-Gap Discharge ESD event, the pulse current rises to approximately 45A in 1ns (di/dt =45 x 109). An inductance of only 10nH adds an addi-tional 450V to the clamp voltage, and represents approximately 0.5in of board trace. Regardless of the device’s specified diode clamp voltage, a poor layout with parasitic inductance significantly increases the effective clamp voltage at the protected signal line.Minimize the effects of parasitic inductance by placing the MAX3205E/MAX3207E/MAX3208E as close to the connector (or ESD contact point) as possible.A low-ESR 0.1µF capacitor is recommended between V CC and GND in order to get the maximum ESD protec-tion possible. This bypass capacitor absorbs the charge transferred by a positive ESD event. Ideally, the supply rail (V CC ) would absorb the charge caused by a positive ESD strike without changing its regulated value. All power supplies have an effective output impedance on their positive rails. If a power supply’s effective output impedance is 1Ω, then by using V = I x R, the clamping voltage of V C increases by the equa-tion V C = I ESD x R OUT . A +8kV IEC 61000-4-2 ESD event generates a current spike of 24A. The clamping voltage increases by V C = 24A x 1Ω, or V C = 24V.Again, a poor layout without proper bypassing increas-es the clamping voltage. A ceramic chip capacitor mounted as close as possible to the MAX3205E/MAX3207E/MAX3208E V CC pin is the best choice for this application. A bypass capacitor should also beplaced as close to the protected device as possible.MAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs_______________________________________________________________________________________5Figure 1. Parasitic Series InductanceFigure 2. IEC 61000-4-2 ESD Generator Current WaveformM A X 3205E /M A X 3207E /M A X 3208E±15kV ESD ProtectionESD protection can be tested in various ways. The MAX3205E/MAX3207E/MAX3208E are characterized for protection to the following limits:•±15kV using the Human Body Model•±8kV using the Contact Discharge Method specified in IEC 61000-4-2•±15kV using the IEC 61000-4-2 Air-Gap Discharge MethodESD Test ConditionsESD performance depends on a number of conditions.Contact Maxim for a reliability report that documents test setup, methodology, and results.Human Body ModelFigure 3 shows the H uman Body Model, and Figure 4shows the current waveform it generates when dis-charged into a low impedance. This model consists of a 100pF capacitor charged to the ESD voltage of inter-est, which is then discharged into the device through a 1.5k Ωresistor.IEC 61000-4-2The IEC 61000-4-2 standard covers ESD testing and performance of finished equipment. The MAX3205E/MAX3207E/MAX3208E help users design equipment that meets Level 4 of IEC 61000-4-2. The main differ-ence between tests done using the Human Body Modeland IEC 61000-4-2 is higher peak current in IEC 61000-4-2. Because series resistance is lower in the IEC 61000-4-2 ESD test model (Figure 5), the ESD-withstand voltage measured to this standard is general-ly lower than that measured using the H uman Body Model. Figure 2 shows the current waveform for the ±8kV, IEC 61000-4-2 Level 4, ESD Contact Discharge test. The Air-Gap Discharge test involves approaching the device with a charged probe. The Contact Discharge method connects the probe to the device before the probe is energized.Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs 6_______________________________________________________________________________________Figure 4. Human Body Model Current WaveformLayout RecommendationsProper circuit-board layout is critical to suppress ESD-induced line transients (See Figure 6). The MAX3205E/MAX3207E/MAX3208E clamp to 100V; however, with improper layout, the voltage spike at the device can be much higher. A lead inductance of 10nH with a 45A current spike results in an additional 450V spike on the protected line. It is essential that the layout of the PC board follows these guidelines:1)Minimize trace length between the connector or input terminal, I/O_, and the protected signal line.2)Use separate planes for power and ground to reduce parasitic inductance and to reduce the impedance to the power rails for shunted ESD current.3)Ensure short low-inductance ESD transient return paths to GND and V CC .4)Minimize conductive power and ground loops.5)Do not place critical signals near the edge of the PC board.6)Bypass V CC to GND with a low-ESR ceramic capaci-tor as close to V CC as possible.7)Bypass the supply of the protected device to GND with a low-ESR ceramic capacitor as close to the supply pin as possible.UCSP Applications InformationFor the latest application details on UCSP construction,dimensions, tape carrier information, printed circuit board techniques, bump-pad layout, and recommend-ed reflow temperature profile, as well as the latest infor-mation on reliability testing results, go to the Maxim website at /ucsp for the Application Note, UCSP—A Wafer-Level Chip-Scale Package .Chip InformationDIODE COUNT:MAX3205E: 7MAX3207E: 3MAX3208E: 5PROCESS: BiCMOSMAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs_______________________________________________________________________________________7Typical Operating CircuitM A X 3205E /M A X 3207E /M A X 3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs 8_______________________________________________________________________________________Pin ConfigurationsMAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs_______________________________________________________________________________________9Package Information(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)M A X 3205E /M A X 3207E /M A X 3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs 10______________________________________________________________________________________Package Information (continued)(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)MAX3205E/MAX3207E/MAX3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs______________________________________________________________________________________11Package Information (continued)(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)M A X 3205E /M A X 3207E /M A X 3208EDual, Quad, and Hex High-Speed Differential ESD-Protection ICs 12______________________________________________________________________________________Package Information (continued)(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)Dual, Quad, and Hex High-SpeedDifferential ESD-Protection ICs Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses areimplied. Maxim reserves the right to change the circuitry and specifications without notice at any time.Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________13©2005 Maxim Integrated Products Printed USAis a registered trademark of Maxim Integrated Products, Inc. Package Information (continued)(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages.)MAX3205E/MAX3207E/MAX3208E。

_______________General DescriptionThe MAX4545/MAX4546/MAX4547 are low-voltage T-switches designed for switching RF and video signals from DC to 300MHz in 50Ωand 75Ωsystems. The MAX4545 contains four normally open single-pole/single-throw (SPST) switches. The MAX4546 contains two dual SPST switches (one normally open, one normally closed.)The MAX4547 contains two single-pole/double-throw (SPDT) switches.Each switch is constructed in a “T” configuration, ensuring excellent high-frequency off isolation and crosstalk of -80dB at 10MHz. They can handle Rail-to-Rail ®analog sig-nals in either direction. On-resistance (20Ωmax) is matched between switches to 1Ωmax and is flat (0.5Ωmax) over the specified signal range, using ±5V supplies.The off leakage current is less than 5nA at +25°C and 50nA at +85°C.These CMOS switches can operate with dual power sup-plies ranging from ±2.7V to ±6V or a single supply between +2.7V and +12V. All digital inputs have 0.8V/2.4V logic thresholds, ensuring both TTL- and CMOS-logic com-patibility when using ±5V or a single +5V supply.________________________ApplicationsRF SwitchingVideo Signal RoutingHigh-Speed Data Acquisition Test Equipment ATE Equipment Networking____________________________Featureso Low 50ΩInsertion Loss: -1dB at 100MHz o High 50ΩOff Isolation: -80dB at 10MHz o Low 50ΩCrosstalk: -80dB at 10MHz o DC to 300MHz -3dB Signal Bandwidth o 20ΩSignal Paths with ±5V Supplies o 1ΩSignal-Path Matching with ±5V Supplies o 0.5ΩSignal-Path Flatness with ±5V Supplies o ±2.7V to ±6V Dual Supplies +2.7V to +12V Single Supply o Low Power Consumption: <1µW o Rail-to-Rail Bidirectional Signal Handling o Pin Compatible with Industry-Standard DG540, DG542, DG643o >2kV ESD Protection per Method 3015.7o TTL/CMOS-Compatible Inputs with Single +5V or ±5VMAX4545/MAX4546/MAX4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches________________________________________________________________Maxim Integrated Products1_____________________Pin Configurations/Functional Diagrams/Truth Tables19-1232; Rev 0; 6/97Ordering Information continued at end of data sheet.For free samples & the latest literature: , or phone 1-800-998-8800Rail-to-Rail is a registered trademark of Nippon Motorola Ltd.M A X 4545/M A X 4546/M A X 4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS—Dual Supplies(V+ = +4.5V to +5.5V, V- = -4.5V to -5.5V, V INL = 0.8V, V INH = 2.4V, V GND_= 0V, T A = T MIN to T MAX , unless otherwise noted. Typical values are at T A = +25°C.)Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.(Voltages Referenced to GND)V+...........................................................................-0.3V, +13.0V V-............................................................................-13.0V, +0.3V V+ to V-...................................................................-0.3V, +13.0V All Other Pins (Note 1)..........................(V- - 0.3V) to (V+ + 0.3V)Continuous Current into Any Terminal..............................±25mA Peak Current into Any Terminal(pulsed at 1ms, 10% duty cycle)..................................±50mA ESD per Method 3015.7..................................................>2000V Continuous Power Dissipation (T A = +70°C) (Note 2)16-Pin Plastic DIP(derate 10.53mW/°C above +70°C)..........................842mW16-Pin Narrow SO(derate 8.70mW/°C above +70°C)............................696mW 16-Pin QSOP (derate 8.3mW/°C above +70°C)..........667mW 20-Pin Plastic DIP (derate 8.0mW/°C above +70°C)...640mW 20-Pin Wide SO (derate 10.00mW/°C above +70°C)..800mW 20-Pin SSOP (derate 8.0mW/°C above +70°C)..........640mW Operating Temperature RangesMAX454_C_ E.....................................................0°C to +70°C MAX454_E_ E..................................................-40°C to +85°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10sec).............................+300°CNote 1:Voltages on all other pins exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to maximum cur-rent rating.MAX4545/MAX4546/MAX4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)(V+ = +4.5V to +5.5V, V- = -4.5V to -5.5V, V INL = 0.8V, V INH = 2.4V, V GND_= 0V, T A = T MIN to T MAX , unless otherwise noted. Typical values are at T A = +25°C.)M A X 4545/M A X 4546/M A X 4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches 4_______________________________________________________________________________________ELECTRICAL CHARACTERISTICS—Single +5V Supply(V+ = +4.5V to +5.5V, V- = 0V, V INL = 0.8V, V INH = 2.4V, V GND_= 0V, T A = T MIN to T MAX , unless otherwise noted. Typical values are at T A = +25°C.)MAX4545/MAX4546/MAX4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches_______________________________________________________________________________________5ELECTRICAL CHARACTERISTICS—Single +3V Supply(V+ = +2.7V to +3.6V, V- = 0V, V INL = 0.8V, V INH = 2.4V, V GND_ = 0V, T A = T MIN to T MAX , unless otherwise noted. Typical values are at T A = +25°C.)Note 2:The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.Note 3:Guaranteed by design.Note 4:∆R ON = ∆R ON(MAX)- ∆R ON(MIN).Note 5:Resistance flatness is defined as the difference between the maximum and the minimum value of on-resistance as mea-sured over the specified analog signal range.Note 6:Leakage parameters are 100% tested at the maximum rated hot temperature and guaranteed by correlation at +25°C.Note 7:Off isolation = 20log 10[V COM / (V NC or V NO )], V COM = output, V NC or V NO = input to off switch.Note 8:Between any two switches.Note 9:Leakage testing for single-supply operation is guaranteed by testing with dual supplies.M A X 4545/M A X 4546/M A X 4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches 6_________________________________________________________________________________________________________________________________Typical Operating Characteristics(V+ = +5V, V- = -5V, T A = +25°C, GND = 0V, packages are surface mount, unless otherwise noted.)10010-51234-4-3-2-15ON-RESISTANCE vs. V COM(DUAL SUPPLIES)V COM (V)R O N (Ω)5111315971723192125-5-3-2-4-1012345ON-RESISTANCE vs. V COM AND TEMPERATURE (DUAL SUPPLIES)V COM (V)R O N (Ω)10001010012345678910ON-RESISTANCE vs. V COM(SINGLE SUPPLY)V COM (V)R O N (Ω)102025153040354501.0 1.50.52.0 2.53.0 3.54.0 4.55.0ON-RESISTANCE vs. V COM AND TEMPERATURE (SINGLE SUPPLY)V COM (V)R O N (Ω)050100150200250±2±3±4±5±6±8ON/OFF TIME vs.SUPPLY VOLTAGEM A X 4545 T O C 07V+, V- (V)t O N , t O F F (n s )t ONt OFF0.00010.0010.010.1110-75-50-25257550100125ON/OFF-LEAKAGE CURRENT vs.TEMPERATURETEMPERATURE (°C)L E A K A G E (n A)-20204006010080120-5-3-2-4-1012345CHARGE INJECTION vs. V COMV COM (V)Q j (p C )103050709011020406080100-75-2575125-502550100ON/OFF TIME vs.TEMPERATUREM A X 4545 T O C 08TEMPERATURE (°C)t O N , t O F F (n s )t ONt OFF0.000010.00010.001I-I+0.010.11-75-2575125-502550100POWER-SUPPLY CURRENT vs. TEMPERATUREM A X 4545 T O C 09TEMPERATURE (°C)I +, I - (µA )MAX4545/MAX4546/MAX4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches_______________________________________________________________________________________70.40.20.61.21.41.00.81.601.0 1.52.0 2.50.53.0 3.54.0 4.55.0LOGIC-LEVEL THRESHOLD vs. POSITIVE SUPPLY VOLTAGEM A X 4545 T O C 10V+ (V)L O G I C -L E V E L T H R E S H O L D (V )-1200.11010001001MAX4545FREQUENCY RESPONSE-100-110FREQUENCY (MHz)L O S S (d B )-80-90-60-50-70-40-20-10-30-1001101001000MAX4546FREQUENCY RESPONSE-60-70-80-90-30-40-50-20-10FREQUENCY (MHz)L O S S (d B )100-20-10-1001101000FREQUENCY RESPONSE-70-80-90-30-40-50-601006080-100-40-60-8040200-20FREQUENCY (MHz)S W I T C H L O S S (d B )O N P H A S E (D E G R E E S )1001000.0001101k 100k10k100MAX4547TOTAL HARMONIC DISTORTIONvs. FREQUENCY0.001FREQUENCY (Hz)T H D (%)0.010.1110____________________________Typical Operating Characteristics (continued)(V+ = +5V, V- = -5V, T A = +25°C, GND = 0V, packages are surface mount, unless otherwise noted.)_______________Theory of OperationLogic-Level TranslatorsThe MAX4545/MAX4546/MAX4547 are constructed as high-frequency “T” switches, as shown in Figure 1. The logic-level input, IN_, is translated by amplifier A1 into a V+ to V- logic signal that drives amplifier A2. (Amplifier A2 is an inverter for normally closed switches.)Amplifier A2 drives the gates of N-channel MOSFETs N1 and N2 from V+ to V-, turning them fully on or off.The same signal drives inverter A3 (which drives the P-channel MOSFETs P1 and P2) from V+ to V-, turning them fully on or off, and drives the N-channel MOSFET N3 off and on.The logic-level threshold is determined by V+ and GND_. The voltage on GND_ is usually at ground potential, but it may be set to any voltage between (V+ - 2V) and V-. When the voltage between V+ and GND_ is less than 2V, the level translators become very slow and unreliable. Since individual switches in each package have individual GND_ pins, they may be set to different voltages. Normally, however, they should all be connected to the ground plane.Switch On ConditionWhen the switch is on, MOSFETs N1, N2, P1, and P2are on and MOSFET N3 is off. The signal path is COM_to NO_, and because both N-channel and P-channel MOSFETs act as pure resistances, it is symmetrical(i.e., signals may pass in either direction). The off MOSFET, N3, has no DC conduction, but has a small amount of capacitance to GND_. The four on MOSFETs also have capacitance to ground that,together with the series resistance, forms a lowpass fil-ter. All of these capacitances are distributed evenly along the series resistance, so they act as a transmis-sion line rather than a simple R-C filter. This helps to explain the exceptional 300MHz bandwidth when the switches are on.M A X 4545/M A X 4546/M A X 4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches 8_____________________________________________________________________________________________________________________________________________________Pin Description*All pins have ESD diodes to V- and V+.**NO_ (or NC_) and COM_ pins are identical and interchangeable. Either may be considered as an input or output; signals passequally well in either direction.Figure 1. T-Switch ConstructionTypical attenuation in 50Ωsystems is -1dB and is rea-sonably flat up to 100MHz. Higher-impedance circuits show even lower attenuation (and vice versa), but slightly lower bandwidth due to the increased effect of the internal and external capacitance and the switch’s internal resistance.The MAX4545/MAX4546/MAX4547 are optimized for ±5V operation. Using lower supply voltages or a single supply increases switching time, increases on-resis-tance (and therefore on-state attenuation), and increas-es nonlinearity.Switch Off Condition When the switch is off, MOSFETs N1, N2, P1, and P2 are off and MOSFET N3 is on. The signal path is through the off-capacitances of the series MOSFETs, but it is shunted to ground by N3. This forms a high-pass filter whose exact characteristics are dependent on the source and load impedances. In 50Ωsystems, and below 10MHz, the attenuation can exceed 80dB. This value decreases with increasing frequency and increasing circuit impedances. External capacitance and board layout have a major role in determining over-all performance.__________Applications InformationPower-Supply ConsiderationsOverview The MAX4545/MAX4546/MAX4547 construction is typi-cal of most CMOS analog switches. It has three supply pins: V+, V-, and GND. V+ and V- are used to drive the internal CMOS switches and set the limits of the analog voltage on any switch. Reverse ESD protection diodes are internally connected between each analog signal pin and both V+ and V-. If the voltage on any pin exceeds V+ or V-, one of these diodes will conduct. During normal operation these reverse-biased ESD diodes leak, forming the only current drawn from V-. Virtually all the analog leakage current is through the ESD diodes. Although the ESD diodes on a given sig-nal pin are identical, and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or V- and the analog signal. This means their leakages vary as the signal varies. The difference in the two diode leakages from the signal path to the V+ and V- pins constitutes the analog signal-path leakage cur-rent. All analog leakage current flows to the supply ter-minals, not to the other switch terminal. This explains how both sides of a given switch can show leakage currents of either the same or opposite polarity.There is no connection between the analog signal paths and GND. The analog signal paths consist of an N-channel and P-channel MOSFET with their sources and drains paralleled and their gates driven out of phase with V+ and V- by the logic-level translators.V+ and GND power the internal logic and logic-level translators, and set the input logic thresholds. The logic-level translators convert the logic levels to switched V+ and V- signals to drive the gates of the analog switches. This drive signal is the only connec-tion between the logic supplies and the analog sup-plies. All pins have ESD protection to V+ and to V-. Increasing V- has no effect on the logic-level thresh-olds, but it does increase the drive to the P-channel switches, reducing their on-resistance. V- also sets the negative limit of the analog signal voltage.The logic-level thresholds are CMOS and TTL compati-ble when V+ is +5V. As V+ is raised, the threshold increases slightly; when V+ reaches +12V, the level threshold is about 3.1V, which is above the TTL output high-level minimum of 2.8V, but still compatible with CMOS outputs.Bipolar-Supply Operation The MAX4545/MAX4546/MAX4547 operate with bipolar supplies between ±2.7V and ±6V. The V+ and V- sup-plies need not be symmetrical, but their sum cannot exceed the absolute maximum rating of 13.0V. Do not connect the MAX4545/MAX4546/MAX4547 V+ pin to +3V and connect the logic-level input pins to TTL logic-level signals. TTL logic-level outputs can exceed the absolute maximum ratings, causing damage to the part and/or external circuits.CAUTION:The absolute maximum V+ to V- differential voltage is 13.0V. Typical “±6-Volt” or “12-Volt”supplies with ±10% tolerances can be as high as 13.2V. This voltage can damage the MAX4545/MAX4546/MAX4547. Even ±5% toler-ance supplies may have overshoot or noise spikes that exceed 13.0V.Single-Supply Operation The MAX4545/MAX4546/MAX4547 operate from a sin-gle supply between +2.7V and +12V when V- is con-nected to GND. All of the bipolar precautions must be observed. Note, however, that these parts are opti-mized for ±5V operation, and most AC and DC charac-teristics are degraded significantly when departing from ±5V. As the overall supply voltage (V+ to V-) is lowered, switching speed, on-resistance, off isolation, and distortion are degraded. (See Typical Operating Characteristics.) MAX4545/MAX4546/MAX4547Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches _______________________________________________________________________________________9M A X 4545/M A X 4546/M A X 4547Single-supply operation also limits signal levels and interferes with grounded signals. When V- = 0V, AC sig-nals are limited to -0.3V. Voltages below -0.3V can be clipped by the internal ESD-protection diodes, and the parts can be damaged if excessive current flows.Power OffWhen power to the MAX4545/MAX4546/MAX4547 is off (i.e., V+ = 0V and V- = 0V), the Absolute Maximum Ratings still apply. This means that neither logic-level inputs on IN_ nor signals on COM_, NO_, or NC_ can exceed ±0.3V. Voltages beyond ±0.3V cause the inter-nal ESD-protection diodes to conduct, and the parts can be damaged if excessive current flows.GroundingDC Ground ConsiderationsSatisfactory high-frequency operation requires that careful consideration be given to grounding. For most applications, a ground plane is strongly recom-mended, and all GND_ pins should be connected to it with solid copper.While the V+ and V- power-supply pins are common to all switches in a given package,each switch has separate ground pins that are not internally connected to each other. This contributes to the overall high-frequency performance and provides added flexibility in some applications, but it can cause problems if it is overlooked. All the GND_ pins have ESD diodes to V+ and V-.In systems that have separate digital and analog (sig-nal) grounds, connect these switch GND_ pins to ana-log ground. Preserving a good signal ground is much more important than preserving a digital ground.Ground current is only a few nanoamps.The logic-level inputs, IN_, have voltage thresholds determined by V+ and GND_. (V- does not influence the logic-level threshold.) With +5V and 0V applied to V+ and GND_, the threshold is about 1.6V, ensuring compatibility with TTL- and CMOS-logic drivers.The various GND_ pins can be connected to separate voltage potentials if any or all of the logic-level inputs is not a normal logic signal. (The GND_ voltages cannot exceed (V+ - 2V) or V-.) Elevating GND_ reduces off isolation. For example, using the MAX4545, if GND2–GND6 are connected to 0V and GND1 is connected to V-, then switches 2, 3, and 4 would be TTL/CMOS com-patible, but switch 1 (IN1) could be driven with the rail-to-rail output of an op amp operating from V+ and V-.Note, however, that IN_ can be driven more negative than GND_, as far as V-. GND_ does not have to be removed from 0V when IN_ is driven from bipolar sources, but the voltage on IN_ should never exceed V-.GND_ should be separated from 0V only if the logic-level threshold has to be changed.Any GND_ pin not connected to 0V should be bypassed to the ground plane with a surface-mount 10nF capacitor to maintain good RF grounding. DC current in the IN_ and GND_ pins is less than 1nA, but increases with switching frequency.On the MAX4545 only, two extra ground pins—GND5and GND6—are provided to improve isolation and crosstalk. They are not connected to the logic-level cir-cuit. These pins should always be connected to the ground plane with solid copper.AC Ground and BypassingA ground plane is mandatory for satisfactory high-frequency operation.(Prototyping using hand wiring or wire-wrap boards is strongly discouraged.) Connect all 0V GND_ pins to the ground plane with solid copper.(The GND_ pins extend the high-frequency ground through the package wire-frame, into the silicon itself,thus improving isolation.) The ground plane should be solid metal underneath the device, without interruptions.There should be no traces under the device itself. For DIP packages, this applies to both sides of a two-sided board. Failure to observe this will have a minimal effect on the “on” characteristics of the switch at high frequen-cies, but it will degrade the off isolation and crosstalk.All V+ and V- pins should be bypassed to the ground plane with surface-mount 10nF capacitors. For DIP packages, they should be mounted as close as possi-ble to the pins on the same side of the board as the device. Do not use feedthroughs or vias for bypass capacitors. For surface-mount packages, the pins are so close to each other that the bypass capacitors should be mounted on the opposite side of the board from the device. In this case, use short feedthroughs or vias, directly under the V+ and V- pins. Any GND_ pin not connected to 0V should be similarly bypassed. If V-is 0V, connect it directly to the ground plane with solid copper. Keep all leads short.The MAX4547 has two V+ and V- pins. Make DC con-nections to only one of each to minimize crosstalk. Do not route DC current into one of the V+ or V- pins and out the other V+ or V- pin to other devices. The second set of V+ and V- pins is for AC bypassing only.For dual-supply operation, the MAX4547 should have four 10nF bypass capacitors connected to each V+and V- pin, as close to the package as possible. For single-supply operation, the MAX4547 should have two 10nF bypass capacitors connected (one to each V+pin), as close to the package as possible.Quad/Dual, Low-Voltage,Bidirectional RF/Video Switches 10______________________________________________________________________________________MAX4545/MAX4546/MAX4547Bidirectional RF/Video Switches______________________________________________________________________________________11On the MAX4545, GND5 and GND6 should always be connected to the ground plane with solid copper to improve isolation and crosstalk.Signal RoutingKeep all signal leads as short as possible. Separate all signal leads from each other and other traces with the ground plane on both sides of the board. Where possi-ble, use coaxial cable instead of printed circuit board traces.Board LayoutIC sockets degrade high-frequency performance and should not be used if signal bandwidth exceeds 5MHz.Surface-mount parts, having shorter internal lead frames, provide the best high-frequency performance.Keep all bypass capacitors close to the device, and separate all signal leads with ground planes. Such grounds tend to be wedge-shaped as they get closer to the device. Use vias to connect the ground planes on each side of the board, and place the vias in the apex of the wedge-shaped grounds that separate signal leads.Logic-level signal lead placement is not critical.Impedance MatchingThe typical on-resistances of the switches in the MAX4545/MAX4546/MAX4547 are 14Ω, but the off-state impedances are approximately equal to a 6pF capacitor. In coaxial systems, therefore, it is impossible to match any impedance for both the on and off state. If impedance matching is critical, the MAX4546 is best suited, since its two sections can be configured as a single on/off switch, as shown in Figure 2. This circuit “wastes” switches and has higher losses, but has bet-ter off isolation and maintains good impedance match-ing in both the on and off states. The resistance values shown in Figure 3 are optimized with ±5V supplies for both 50Ωand 75Ωsystems at room temperature.MultiplexerWith its excellent off isolation, the MAX4545 is ideal for use in high-frequency video multiplexers. Figure 3shows such an application for switching any one of four video inputs to a single output. The same circuit may be used as a demultiplexer by simply reversing the sig-nal direction.Stray capacitance of traces and the output capacitance of switches placed in parallel reduces bandwidth, so the outputs of no more than four individual switches should be placed in parallel if high bandwidth is to be main-tained. If more than four mux channels are needed, the 4-channel circuit should be duplicated and cascaded.Figure 2. Impedance Matching On/Off SwitchM A X 4545/M A X 4546/M A X 4547Bidirectional RF/Video Switches 12______________________________________________________________________________________Figure 3. 4-Channel MultiplexerMAX4545/MAX4546/MAX4547Bidirectional RF/Video Switches______________________________________________________________________________________13Figure 4. Switching Time______________________________________________Test Circuits/Timing DiagramsFigure 5. Break-Before-Make Interval (MAX4546/MAX4547 only)M A X 4545/M A X 4546/M A X 4547Bidirectional RF/Video Switches 14______________________________________________________________________________________Figure 6. Charge InjectionFigure 7. On Loss, Off Isolation, and Crosstalk_________________________________Test Circuits/Timing Diagrams (continued)MAX4545/MAX4546/MAX4547Bidirectional RF/Video Switches______________________________________________________________________________________15N.C. = NO INTERNAL CONNECTIONTRANSISTOR COUNT: 253SUBSTRATE INTERNALLY CONNECTED TO V-GND2GND5GND4NO4V-NO1COM30.101"(2.565mm)0.085"(2.159mm)COM4IN4IN3GND6V+NO2N.C.NO3GND3COM1IN1IN2COM2GND1N.C.MAX4545GND2GND4N.C.COM1N.C.N.C.NC20.101"(2.565mm)0.085"(2.159mm)V+NC1IN2COM2N.C.N.C.V-N.C.GND3GND1V-MAX4547GND2N.C.N.C.NC4V-NO1GND30.101"(2.565mm)MAX4546GND4COM4COM3N.C.V+NO2N.C.NC30.085"(2.159mm)GND1N.C.Figure 8. NO_, NC_, COM_ Capacitance_________________Chip TopographiesMaxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.16__________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600©1997 Maxim Integrated ProductsPrinted USAis a registered trademark of Maxim Integrated Products.M A X 4545/M A X 4546/M A X 4547Bidirectional RF/Video Switches___________________________________________Ordering Information (continued)*Contact factory for dice specifications.。