A,Dec,2010
2.COLLECTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTA1271 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain z Complementary to KTC3203
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V (BR)CBO I C = -0.1mA ,I E =
0 -35 V
Collector-emitter breakdown voltage V (BR) CEO I C =-10mA,I B =0 -30 V
Emitter-base breakdown voltage V (BR)EBO I E =-0.1mA,I C =
0 -5 V
Collector cut-off current I CBO V CB =-35V,I E =
0 -0.1μA
Collector cut-off current I CEO V CE =-25V,I B =0 -0.2μA Emitter cut-off current I EBO V EB =-5V,I C =
0 -0.1μ
A
h FE(1) V CE =-1V, I C =
-100mA
100 320
DC current gain
h FE(2) V CE =-1V, I C =
-700mA 35
Collector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-20mA -0.7V
Base-emitter voltage V BE V CE =-1V, I C =
-10mA -0.8V Transition frequency f T
V CE =-5V,I C =-10mA 120 MHz
Collector Output Capacitance
C ob
V CB =-10V, I E =0, f=1MHz
19 pF
CLASSIFICATION OF h FE(1)
RANK
O Y
RANGE
100-200 160-320
Symbo
Parameter Value Unit
V CBO Collector-Base Voltage -35 V
V CEO Collector-Emitter Voltage -30 V
V EBO Emitter-Base Voltage -5 V
I C Collector Current -0.8 A
P C Collector Power Dissipation 0.625 W
R θJA Thermal Resistance From Junction To Ambient 200 ℃/W
T j Junction Temperature 150 ℃
T stg
Storage Temperature -55~+150 ℃
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https://www.doczj.com/doc/2618485412.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
https://www.doczj.com/doc/2618485412.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Plastic bag
Label on the Outer Box
Inner Box: 333 mm ×162mm ×43mm
Outer Box: 350 mm × 340mm × 250mm
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box