Available online at
https://www.doczj.com/doc/2b17716609.html,
Journal of the European Ceramic Society32(2012)
433–439
Phase diagram and properties of
Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3polycrystalline ceramics
Dawei Wang a,b,Maosheng Cao a,??,Shujun Zhang b,?
a School of Materials Science and Engineering,Beijing Institute of Technology,Beijing100081,China
b Materials Research Institute,Pennsylvania State University,University Park,PA16802,USA
Received21July2011;received in revised form8August2011;accepted11August2011
Available online3September2011
Abstract
y Pb(In1/2Nb1/2)O3–(1?x?y)Pb(Mg1/3Nb2/3)O3–x PbTiO3(y PIN–(1?x?y)PMN–x PT)polycrystalline ceramics with morphotropic phase bound-ary(MPB)compositions were synthesized using columbite precursor method.X-ray diffraction results indicated that the MPB of PIN–PMN–PT was located around PT=0.33–0.36,con?rmed by their respective dielectric,piezoelectric and electromechanical properties.The optimum prop-erties were found for the MPB composition0.36PIN–0.30PMN–0.34PT,with dielectric permittivityεr of2970,piezoelectric coef?cient d33of 450pC/N,planar electromechanical coupling k p of49%,remanent polarization P r of31.6?C/cm2and T C of245?C.According to the results of dielectric and pyroelectric measurements,the Curie temperature T C and rhombohedral to tetragonal phase transition temperature T R–T were obtained,and the“?at”MPB for PIN–PMN–PT was achieved,indicating that the strongly curved MPB in PMN–PT system was improved by adding PIN component,offering the possibility to grow single crystals with high electromechanical properties and expanded temperature usage range(limited by T R–T).
?2011Elsevier Ltd.All rights reserved.
Keywords:Sintering;Dielectric properties;Piezoelectric properties;Ferroelectric properties;PIN–PMN–PT
1.Introduction
Relaxor-PbTiO3(PT)based single crystals,
such as Pb(Mg1/3Nb2/3)O3–PbTiO3(PMN–PT)and
Pb(Zn1/3Nb2/3)O3–PbTiO3(PZN–PT),were found to pos-
sess extra high electromechanical coupling factor(k33>0.9)
and piezoelectric coef?cient(d33>1500pC/N)that far out
perform polycrystalline PZT-based ceramics(k33～0.7and d33～400–600pC/N),making them promising candidates for medical ultrasonic imaging,sonar transducers,and solid-state
actuators.1–3Although relaxor-PT based single crystals have
excellent piezoelectric and electromechanical properties,their
relatively low Curie temperature(T C～130–170?C)becomes a critical limitation for applications,where the thermal stability is required,in terms of dielectric and piezoelectric property
?Corresponding author.
??Corresponding author.
E-mail addresses:caomaosheng@https://www.doczj.com/doc/2b17716609.html,(M.Cao),soz1@https://www.doczj.com/doc/2b17716609.html, (S.Zhang).variations and depolarization as a result of post-fabrication
process in transducers.3Their usage temperature ranges are
further restricted by ferroelectric rhombohedral to ferroelectric
tetragonal phase transition(T R–T～60–95?C),occurring at signi?cantly lower temperatures due to the strongly curved
morphotropic phase boundary(MPB).3–5
A broader temperature operating range would allow for
greater device design?exibility and therefore a wider range
of potential applications.Thus,new piezoelectric single crystal
compositions,which will be able to operate at higher tem-
perature than current state-of-the-art PMN–PT/PZN–PT single
crystals,are desirable.6In order to?nd the possibility of sin-
gle crystals for the next generation of transduction devices,
numerous studies are focused on exploring new high perfor-
mance ferroelectric systems with higher T C/T R–T over the past
few years.7–10
Perovskite Pb(In1/2Nb1/2)O3(PIN)is a typical relaxor fer-
roelectric material with a T C of about90?C.The solid
solution of the PIN–PT binary system exhibits a MPB near
37mol%PT,where high piezoelectric and dielectric prop-
erties can be obtained.The Curie temperature of PIN–PT
0955-2219/$–see front matter?2011Elsevier Ltd.All rights reserved. doi:10.1016/j.jeurceramsoc.2011.08.025
434 D.Wang et al./Journal of the European Ceramic Society32(2012)
433–439
Fig.1.Phase diagram of PIN–PMN–PT ternary system.Black dots are the selected compositions in this work.Other data is from the published papers (Red hollow squares:Hosona et al.11;Blue hollow triangles:Lin et al.15;Green hollow circles:Pham-Thi,et al.16).(For interpretation of the references to color in this?gure legend,the reader is referred to the web version of the article.) with MPB composition is about320?C,much higher than that of PMN–PT.11Consequently,it is promising to improve the T C/T R–T of PMN–PT system by adding PIN compo-nent.Recently,the new relaxor-PT based ternary single crystal system Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT)was reported to possess higher T C>170?C and T R–T>120?C,and comparable piezoelectric properties to the binary crystal systems PMN–PT,indicating that PIN–PMN–PT crystals are promising candidates for electromechanical devices where high temperature usage and thermal stability are required.12–14However,studies of PIN–PMN–PT system have been focused on the PIN in the range of0.23–0.35,with T R–T less than135?C,T C/T R–T of PIN–PMN–PT are needed to be further improved to satisfy practical applications for higher
temperature Fig. 2.XRD patterns of(a)0.36PIN–(0.64?x)PMN–x PT and(b) 0.46PIN?(0.54?x)PMN–x PT.The space groups were determined to be P4mm and R3c for tetragonal and rhombohedral phases,respectively, according to the XRD patterns.
range.Thus,it is necessary to investigate the PIN–PMN–PT ternary system with higher PIN content level.
In this work,in order to obtain higher T C/T R–T in PIN–PMN–PT ternary system,PIN–PMN–PT ceramics
with Fig.3.SEM micrographs of the fracture surface for0.46PIN–(0.54?x)PMN–x PT:(a)x=0.33;(b)x=0.34;(c)x=0.35;(d)x=0.36.
D.Wang et al./Journal of the European Ceramic Society32(2012)433–439
435
Fig. 4.The piezoelectric and dielectric properties of y PIN–(1?x?y)PMN–x PT as a function of PT:(a)piezoelectric coef-?cient d33;(b)planar electromechanical coupling k p and(c)dielectric permittivityεr.
high PIN content were synthesized using columbite precursor method.Dielectric-and pyroelectric-temperature measurements were used to determine the T C/T R–T.Phase structure,dielec-tric,piezoelectric and ferroelectric properties of PIN–PMN–PT ceramics were studied in detail.
2.Experimental
The PIN–PMN–PT ternary ceramics with compositions of y Pb(In1/2Nb1/2)O3–(1?x?y)Pb(Mg1/3Nb2/3)O3–x PbTiO3 (y PIN–(1?x?y)PMN–x PT,x=0.28–0.37and y=0.36, 0.46)were prepared using two-step columbite
precursor Fig.5.The ferroelectric hysteresis of(a)0.36PIN–(0.64?x)PMN–x PT;(b) 0.46PIN–(0.54?x)PMN–x PT.
method.11,15–17The studied compositions are shown in Fig.1. Raw materials of MgCO3(99.9%,Alfa Aesar,Ward Hill,MA), Nb2O5(99.9%,Alfa Aesar)and In2O3(99.9%,Alfa Aesar) were used to synthesize columbite precursors of MgNb2O6 and InNbO4at1000?C and1100?C,respectively.Pb3O4 (99%,Alfa Aesar),TiO2(99.9%,Ishihara,San Francisco, CA),MgNb2O6and InNbO4powders were batched stoi-chiometrically according to the nominal compositions and wet-milling in alcohol for24h.The dried mixed powders were calcined at800?C for4h.The synthesized powders were subsequently vibratory milled in alcohol for12h.The powders were granulated and pressed into pellets with12mm in diameter.Following binder burnout at550?C,the pellets were sintered in a sealed crucible at1220–1280?C,where PbZrO3 was used as lead source to minimize PbO evaporation.
The density of the sintered samples was measured using the Archimedes method.The phase and morphologies of the sintered samples were determined using X-ray powder diffraction(XRD, PADV and X2diffractometers,Scintag,Cupertino,CA)and scanning electron microscope(SEM,Hitachi S-3500N,Japan). For electrical test,plane-parallel plates of sintered samples were polished using15?m SiC powder.Silver paste was printed to form electrodes on both sides of the disc samples and then?red at700?C for10min.Poling was carried out in silicon oil at 120?C for10min with an electric?eld of30kV/cm.Dielec-tric measurements were carried out on poled samples using a
436 D.Wang et al./Journal of the European Ceramic Society32(2012)
433–439
Fig. 6.(a)Remanent polarization P r and(b)coercive?eld E C of y PIN–(1?x?y)PMN–x PT as a function of PT.
multi-frequency precision LCRF meter(HP4184A,Hewlett Packard,Palo Alto,CA).Piezoelectric coef?cients were mea-sured on disk samples using a Berlincourt d33meter(ZJ-2, Institute of Acoustics Academia Sinica,Beijing,China). Polarization hysteresis and strain-electric?eld behavior were determined using a modi?ed Sawyer–Tower circuit driven by a lock-in ampli?er(Model SR830,Stanford Research System, Sunnyvale,CA)at a frequency of1Hz.The planar electrome-chanical coupling k p and mechanical quality factor Q m were determined from the resonance and antiresonance frequencies, which were measured using an Impedance/Gain-phase analyzer (HP4194A,Hewlett-Packard,Palo Alto,CA),according to IEEE standards.18,19The pyroelectric property was measured by the static Byer–Roundy method20and a picoammeter(HP 4140B,Hewlett Packard,Palo Alto,CA)was used to measure the pyroelectric current.
3.Results and discussion
XRD patterns of the studied compositions for y PIN–(1?x?y)PMN–x PT are shown in Fig.2.All the samples were found to be pure perovskite except the com-positions with0.36PIN,where small peaks of pyrochlore phase were indicated in Fig.2(a).The typical tetragonal phase symmetry for perovskite at room temperature is characterized by(200)peak splitting around2θ=45?,which was used
to Fig.7.The temperature dependence of dielectric permittivity for(a) 0.36PIN–(0.64?x)PMN–x PT and(b)0.46PIN–(0.54?x)PMN–x PT. determine the MPB compositions,separating rhombohedral and tetragonal phases.21,22It was found that with increasing PT content,the(200)peak gradually split,indicating the phase transition from rhombohedral phase to tetragonal phase.As
a result,the compositions with PT content of0.33,0.34and
0.35for0.36PIN–(0.64?x)PMN–x PT and0.34,0.35and0.36 for0.46PIN–(0.54?x)PMN–x PT belong to the MPB region according to the XRD patterns.
SEM micrographs of the fracture surface for 0.46PIN–(0.54?x)PMN–x PT with different PT contents are shown in Fig.3.It was clearly observed that all samples were highly dense,with a mixture of transgranular and inter-granular characteristics.23With increasing PT content,the grain size changed slightly,which was found to be on the order of 2–5?m.
The piezoelectric and dielectric properties of y PIN–(1?x?y)PMN–x PT with different PT contents are shown in Fig.4.It was found that the piezoelectric coef?cient d33,planar electromechanical coupling k p and dielectric per-mittivityεr reached the maxima in the range of PT=0.33–0.36, which is attributed to the enhanced polarizability for MPB compositions.
The ferroelectric hysteresis of y PIN–(1?x?y)PMN–x PT with different PT contents is shown in Fig.5.The correspond-ing remanent polarization P r and coercive?eld E C as a function of PT are shown in Fig.6.It was observed that with increas-ing PT content from0.28to0.36,P r increased?rstly,reaching
D.Wang et al./Journal of the European Ceramic Society 32(2012)433–439
437
Table 1
Piezoelectric,dielectric and ferroelectric properties of 0.36PIN–(0.64?x )PMN–x https://www.doczj.com/doc/2b17716609.html,position (PIN–PMN–PT)Density (g/cm 3)d 33(pC/N)k p (%)Q m εr tan δ(%)T C (?C)T R–T (?C)P r (?C/cm 2)E C (kV/cm)36/36/288.218032.32601030121016627.38.236/35/298.218033.927010400.921516327.58.436/34/308.222038.52401070121815929.88.636/33/318.224039.223012600.922516329.28.836/32/328.231042.12001650123315629.18.836/31/338.137044.61702120123915829.69.336/30/348.145049.01302970 1.1245/31.69.836/29/358.144047.415029901251/30.411.236/28/368.041045.115030601260/29.712.436/27/37
8.1
350
43.3
200
2630
0.7
266
/
27.7
14.8
d 33,piezoelectric coef?cient;k p ,planar electromechanical coupling;Q m ,mechanical quality factor;εr ,dielectric permittivity;tan δ,dielectric loss;T C ,Curi
e temperature;T R–T ,rhombohedral to tetragonal phase transition temperature;P r ,remanent polarization;E C ,coercive ?eld.
Table 2
Piezoelectric,dielectric and ferroelectric properties of 0.46PIN–(0.54?x )PMN–x https://www.doczj.com/doc/2b17716609.html,position (PIN–PMN–PT)Density (g/cm 3)d 33(pC/N)k p (%)Q m εr tan δ(%)T C (?C)T R–T (?C)P r (?C/cm 2)E C (kV/cm)46/26/288.216026.52401100 2.221517324.68.346/25/298.116028.92201000 2.222917425.67.846/24/308.119034.12101110 2.323217725.88.546/23/318.219034.51801050 2.124217425.98.546/22/328.320034.81801070 1.825316425.68.746/21/338.130041.21801470 1.826015827.711.246/20/348.242046.21202490 1.726515828.410.746/19/358.240042.31102840 1.5274/27.811.346/18/368.133036.61302270 1.4284/23.211.946/17/37
8.1
280
33.8
150
2030
1.2
291
/
20.8
11.3
the maxima at PT =0.34,above which,P r decreased.Due to the coexistence of ferroelectric rhombohedral and tetragonal phases in the MPB compositions of y PIN–(1?x ?y )PMN–x PT,the optimum domain reorientation during poling can be achieved,leading to the enhanced P r for MPB composition.Coercive ?eld E C ,however,was found to increase monotonously with increasing PT content,as shown in Fig.6(b),indicating that
the Fig.8.Rhombohedral to tetragonal phase transition temperature T R–T and Curie temperature T C of PIN–PMN–PT as a function of PT (C,cubic phase;R,rhom-bohedral phase;T,tetragonal phase).
domain switching becomes harder,attributed to the increase of the tetragonal phase.
The temperature dependence of the dielectric permittiv-ity for y PIN–(1?x ?y )PMN–x PT is shown in Fig.7.In most cases,two dielectric anomalies can be observed,corre-sponding to the rhombohedral to tetragonal phase transition temperature T R–T and Curie temperature T C ,
respectively.
Fig.9.The shape of MPB for the PIN–PMN–PT ternary system (*Choi et al.24;**Alberta 25).
438 D.Wang et al./Journal of the European Ceramic Society32(2012)433–439
The values of T C can be easily determined by the dielectric maxima,as shown in Fig.7,while the values of T R–T can be con?rmed by the pyroelectric measurements.24Consequently, the T C/T R–T dependence as a function of PT was obtained and given in Fig.8.It was clear that with increasing PT content, T C increased from166?C to266?C and215?C to291?C for y PIN–(1?x?y)PMN–x PT with0.36PIN and0.46PIN,respec-tively,while,T R–T changed slightly in a wide PT range.Of particular interest is that high T R–T>170?C was achieved for0.46PIN–(0.54?x)PMN–x PT,attractive for single crys-tal growth.Detailed piezoelectric,dielectric and ferroelectric properties for y PIN–(1?x?y)PMN–x PT with0.36PIN and 0.46PIN are listed in Tables1and2,respectively.
According to the data from dielectric and pyroelectric mea-surements in this work,including reported results,24,25the shape of MPB for the PIN–PMN–PT ternary system was obtained, as shown in Fig.9.It is evident that with increasing PIN con-tent,the T C/T R–T are improved greatly,due to the higher T C of PIN(90?C)than that of PMN(?10?C).11,24Of particu-lar signi?cance is that the strongly curved MPB in PMN–PT system became almost“?at”in a broad range of PT content (0.28–0.34)for PIN–PMN–PT ternary system,due to the addi-tion of PIN component,demonstrating that compositions with improved piezoelectric properties and broad temperature usage range are expected at MPB region,as shown in Figs.8and9,26 attractive for electromechanical applications with higher tem-perature usage range.
4.Conclusions
In conclusion,PIN–PMN–PT ternary ceramics with MPB compositions were prepared using two-step columbite precursor method.Phase structure,dielectric,piezoelectric and ferroelec-tric properties were investigated.The optimum properties were found for the MPB composition0.36PIN–0.30PMN–0.34PT, with d33of450pC/N,k p of49%,Q m of130,εr of2970, tanδof 1.1%,P r of31.6?C/cm2,E C of9.8kV/cm and T C of245?C.According to the dielectric-and pyroelectric-temperature measurements,the T C/T R–T were obtained as a function of PT,“?at”MPB in a broad PT range for the ternary PIN–PMN–PT system was achieved.It is signi?cant that high T R–T of170–180?C was achieved for PIN–PMN–PT ternary system,which is promising to grow high performance crystals with enhanced temperature usage range and thermal stability.
Acknowledgements
The authors thank Prof.Thomas R.Shrout for the help-ful discussion.Authors from Beijing Institute of Technology acknowledge the National Natural Science Foundation of China under Grant Nos.50742007,50872159and50972014,and the National High Technology Research and Development Program of China under Grant No.2007AA03Z103.The author(D.W. Wang)wishes to acknowledge the support from the China Schol-arship Council.The work was supported by ONR.References
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JSP课程设计 第1章课程设计目的与要求 (1) 1.1 课程设计目的 (1) 1.2 课程设计的实验环境 (1) 1.3 课程设计的预备知识 (1) 1.4 课程设计要求 (1) 第2章课程设计内容 (2) 2.1 系统设计 (2) 2.2 数据库模型 (3) 2.3 模块与功能设计 (4) 2.4 模块主要代码 (7) 第3章课程设计总结 (16) 参考文献 (17)
第1章课程设计目的与要求 1.1 课程设计目的 本课程的课程设计实际是网络技术专业学生学习完《JSP语言程序设计》课程后，进行的一次全面的综合训练，其目的在于加深对JSP语言程序设计的基础理论和基本知识的理解，掌握运用JSP动态网页编程技术开发应用程序的基本方法。 1.2 课程设计的实验环境 硬件要求：能运行Windows 9.X操作系统的微机系统。 软件要求：JDK、tomcat6.0、SQL Server 2000。 1.3 课程设计的预备知识 熟悉JSP语言程序设计的基本知识及应用开发的编程思想。 1.4 课程设计要求 按课程设计指导书提供的课题，应根据下一节给出的基本需求独立完成各个方面的设计，标有“可选”的部分可根据设计时间的安排及工作量的大小适当选择。选用其他课题或不同的数据库系统，可以组成设计小组，分模块进行,共同协作完成一个课题的开发任务。要求书写详细的设计说明书，对复杂的代码段和程序段，应画出程序流程图。在界面设计中，设计好每个窗口的布局，有多个窗口时，按模块调用的方式画出窗口调用图，用手工画好报表和标签样式，严禁相互抄袭。
第2章课程设计内容 2.1系统功能分析 2.1.1 系统功能分析 人事管理是企业管理的重要内容，如何管理好一个企业内部员工的信息，成为企业管理中的一个大的问题。此时，一个规范、自动的人事管理系统的使用显得尤为重要。根据人事管理的实际要求，结合人事信息管理的实际流程，“人事管理系统”可以满足以下要求： 1．能够掌握企业员工的基本信息，其中包括编号、姓名、性别、籍贯、民族、出生年月、政治面貌、专业、学历、家庭住址、婚姻状况、电话、身份证号等信息，除此之外还可以掌握每个员工的工作信息、调动信息、培训信息、奖惩信息等相关信息。 2．管理人员能够对本系统做相应的管理工作，可以对员工信息进行变动管理，如进行数据添加、查找和修改等操作。而浏览者只可以查看其相应的内容，不可以进行其他操作。 2.1.2 系统功能模块设计 由于人事管理系统主要面向的是小型企业的日常工作，所以设置的模块尽可能的满足企业的日常办公即可，其中设计的功能模块如图2.1所示。 图2.1 功能模块图
HITACHI PB系列喷码机操作与维护——维修培训 爱杰特电子科技有限公司 2013年5月
目录 安全须知....................................................................................................................................................贰第一章设备介绍....................................................................................................................................叁 一、设备部件描述............................................................................................................................叁 二、喷码机技术规范........................................................................................................................伍第二章基本操作....................................................................................................................................柒 一、开机启动....................................................................................................................................柒 二、停机清洗....................................................................................................................................捌第三章信息编辑....................................................................................................................................玖 一、喷印格式....................................................................................................................................玖 二、字符输入....................................................................................................................................玖 三、喷印设置............................................................................................................................ 壹拾叁 四、登录.................................................................................................................................... 壹拾伍第四章参数设置............................................................................................................................ 壹拾柒 一、设备运行参数设定清单.................................................................................................... 壹拾柒 二、运行管理................................................................................................................................ 贰拾 三、强制喷印............................................................................................................................ 贰拾壹 四、振荡电压重新设定............................................................................................................ 贰拾壹 五、历史记录............................................................................................................................ 贰拾壹 六、循环控制............................................................................................................................ 贰拾贰 七、软件管理............................................................................................................................ 贰拾贰 八、功能限制............................................................................................................................ 贰拾贰第五章补充功能............................................................................................................................ 贰拾叁第六章维护保养............................................................................................................................ 贰拾肆第七章异常处理............................................................................................................................ 叁拾伍
#include 急需一个公司的人事管理系统源代码（vc++编程） 悬赏分：100 |解决时间：2008-1-8 09:58 |提问者：klak1 某小型公司，主要有两类人员：经理、员工。现在，需要存储这些人员的姓名、编号、身份证号码、业绩、级别（经理包括总经理、经理、副经理级别，员工包括高级员工、普通员工和临时工级别）、家庭住址、开始工作日期、所在部门、薪水等信息，并可以对这些信息进行检索。 要求： 1)人员编号在生成人员信息时同时生成，每输入一个人员信息编号顺序加1； 2)根据业绩的大小具有自动升降级别的功能； 3)输入员工身份证号码号码后自动获取员工生日； 4)输入员工开始工作日期后自动获取员工工龄； 5)能按姓名或者编号显示、查找、增加、删除和保存各类人员的信息 最佳答案 #include 建立数据库： create database 数据库 建表： create table 部门信息表 (部门编号 char(2) primary key , 部门名称 nchar(14) , 部门职能 nchar(14), 部门人数 char (4) ) go create table 管理员信息表 (用户名 nchar(4) primary key , 密码 char(10) , ) go create table 用户信息表 （用户名char(10) primary key , 用户类型char(10), 密码 char(10) ) go create table 员工工作岗位表 (姓名 nchar(4) primary key , 员工编号 char(4) 工作岗位 nchar(3) , 部门名称 nchar(10), 参加工作时间 char (4) ) go create table 员工学历信息表 (姓名 nchar(4) primary key , 员工编号 char(4) 学历 nchar(2) , 毕业时间 char(10), 毕业院校 nchar (10), 外语情况 nchar(10), 专业 nchar(10) ) go create table 员工婚姻情况表 (姓名 nchar(4) primary key , 员工编号 char(4) 婚姻情况 nchar(2) , 配偶姓名 nchar(4), 配偶年龄 char (3), 工作单位 nchar(10), ) go create table 员工基本信息表 (员工编号 char(4) primary key , 姓名 nchar(4) , package rsgl; import java.awt.* import java.awt.event.*; import java.sql.*; import java.util.*; import javax.swing.*; import javax.swing.border.*; public class A extends JFrame { protected JPanel p = new JPanel(); protected JPanel p1 = new JPanel(); protected JPanel p2 = new JPanel(); protected JPanel p3= new JPanel(); JMenuBar M =new JMenuBar(); JMenu m1 = new JMenu("基本信息模块"); JMenu m2 = new JMenu("考勤考评信息模块"); JMenu m3 = new JMenu("系统维护信息模块"); JMenuItem mm1 = new JMenuItem("员工基本信息"); JMenuItem mm2 = new JMenuItem("员工家庭成员基本信息"); JMenuItem mm3 = new JMenuItem("员工培训信息"); JMenuItem mm4 = new JMenuItem("员工考勤信息"); JMenuItem mm5 = new JMenuItem("员工考评信息"); JMenuItem mm6 = new JMenuItem("普通管理员"); JMenuItem mm7 = new JMenuItem("高级管理员"); JMenuItem mm8 = new JMenuItem("退出"); protected JLabel l1 = new JLabel("员工编号："); protected JLabel l2 = new JLabel("姓名："); protected JLabel l3 = new JLabel("性别："); protected JLabel l4 = new JLabel("年龄："); protected JLabel l5 = new JLabel("部门："); protected JTextField t1 = new JTextField(10); protected JTextField t2 = new JTextField(10); protected JTextField t3 = new JTextField(10); protected JTextField t4 = new JTextField(10); protected JTextField t5 = new JTextField(10); private JButton b1 = new JButton("查询"); private JButton b2 = new JButton("插入"); private JButton b3 = new JButton("修改"); private JButton b4 = new JButton("删除"); private JButton b5 = new JButton("清除"); private JButton b6 = new JButton("下一条"); private Connection c; // @jve:decl-index=0: private Statement s; // @jve:decl-index=0: private ResultSet r; // @jve:decl-index=0: public A() { super("人事管理系统"); getContentPane().add(p); setJMenuBar(M);M.add(m1);M.add(m2);M.add(m3);m1.add(mm1); m1.add(mm2);m1.add(mm3);m1.addSeparator();m1.add(mm8);m2.add(mm4); m2.add(mm5);m3.add(mm6);m3.add(mm7); p.add(p1,BorderLayout.NORTH); p.add(p2,BorderLayout.CENTER); p.add(p3,BorderLayout.SOUTH); p1.setLayout(new GridLayout(5,2,1,3)); p1.add(l1);p1.add(t1); p1.add(l2);p1.add(t2); p1.add(l3);p1.add(t3); p1.add(l4);p1.add(t4); p1.add(l5);p1.add(t5); p2.add(b1);p1.add(b2); p2.add(b3);p1.add(b4); p2.add(b5);p3.add(b6); t1.setText("");t2.setText("");t3.setText("");t4.setText("");t5.setText(""); setSize(350,300);setVisible(true); try{ Class.forName("sun.jdbc.odbc.JdbcOdbcDrive"); c=DriverManager.getConnection("jdbc:odbc:sd","sa",null); s=c.createStatement(); r=s.executeQuery("select * from 员工基本信息表"); } catch (SQLException e){ JOptionPane.showMessageDialog(null ,e.getMessage(),"操作错误！",JOptionPane.ERROR_MESSAGE); System.exit(1); } catch(ClassNotFoundException e) { JOptionPane.showMessageDialog(null ,e.getMessage(),"驱动程序找不到！",JOptionPane.ERROR_MESSAGE); System.exit(1); } addWindowListener( new WindowAdapter(){ public void windowClosing(WindowEvent event) { try { s.close();c.close(); } catch(SQLException e) { JOptionPane.showMessageDialog(null,e.getMessage(),"不能关闭！",JOptionPane.ERROR_MESSAGE); System.exit(1); } } }); b1.addActionListener( new ActionListener(){ public void actionPerformed(ActionEvent event) { try{ r=s.executeQuery("select * #include 附录：源程序代码 1).default.aspx <%@ Page Language="C#" AutoEventWireup="true" CodeFile="Default.aspx.cs" Inherits="Default2" %> 人事管理系统(课程设计)源码
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