General Description
The MAX19997A dual downconversion mixer is a versa-tile, highly integrated diversity downconverter that pro-vides high linearity and low noise figure for a multitude of 1800MHz to 2900MHz base-station applications. The MAX19997A fully supports both low- and high-side LO injection architectures for the 2300MHz to 2900MHz WiMAX ?, LTE, WCS, and MMDS bands, providing 8.7dB gain, +24dBm input IP3, and 10.3dB NF in the low-side configuration, and 8.7dB gain, +24dBm input IP3, and 10.4dB NF in the high-side configuration. High-side LO injection architectures can be further extended down to 1800MHz with the addition of one tuning ele-ment (a shunt inductor) on each RF port.
The device integrates baluns in the RF and LO ports,an LO buffer, two double-balanced mixers, and a pair of differential IF output amplifiers. The MAX19997A requires a typical LO drive of 0dBm and a supply cur-rent guaranteed below 420mA to achieve the targeted linearity performance.
The MAX19997A is available in a compact 6mm x 6mm,36-pin thin QF N lead-free package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from T C = -40°C to +85°C.
Applications
2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations 2.7GHz MMDS Base Stations
UMTS/WCDMA and cdma2000?3G Base Stations
PCS1900 and EDGE Base Stations PHS/PAS Base Stations
Fixed Broadband Wireless Access Wireless Local Loop Private Mobile Radios Military Systems
Features
o 1800MHz to 2900MHz RF Frequency Range o 1950MHz to 3400MHz LO Frequency Range o 50MHz to 500MHz IF Frequency Range o Supports Both Low-Side and High-Side LO Injection o 8.7dB Conversion Gain o +24dBm Input IP3o 10.3dB Noise Figure
o +11.3dBm Input 1dB Compression Point o 70dBc Typical 2 x 2 Spurious Rejection at P RF = -10dBm o Dual Channels Ideal for Diversity Receiver Applications o Integrated LO Buffer
o Integrated LO and RF Baluns for Single-Ended Inputs o Low -3dBm to +3dBm LO Drive
o Pin Compatible with the MAX19999 3000MHz to 4000MHz Mixer o Pin Similar to the MAX9995/MAX9995A and MAX19995/MAX19995A 1700MHz to 2200MHz Mixers and the MAX9985/MAX9985A and MAX19985/MAX19985A 700MHz to 1000MHz Mixers o 42dB Channel-to-Channel Isolation o Single +5.0V or +3.3V Supply
o External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/Reduced-Performance Mode
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
________________________________________________________________Maxim Integrated Products
1
Ordering Information
19-4288; Rev 0; 10/08
For pricing, delivery, and ordering information,
please contact Maxim Direct at 1-888-629-4642,or visit Maxim’s website at https://www.doczj.com/doc/276744118.html,.
+Denotes a lead-free/RoHS-compliant package.*EP = Exposed pad.T = Tape and reel.
Pin Configuration/Functional Block Diagram appears at end of data sheet.
WiMAX is a trademark of WiMAX Forum.
cdma2000 is a registered trademark of Telecommunications Industry Association.
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 2_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, V CC = +4.75V to +5.25V, T C = -40°C to +85°C. Typical values are at V CC = +5.0V, T C = +25°C, unless otherwise noted. R1, R4 = 750?, R2, R5 =698?.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
V CC to GND...........................................................-0.3V to +5.5V RF_, LO to GND.....................................................-0.3V to +0.3V IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_ to GND...................................-0.3V to (V CC + 0.3V)RF_, LO Input Power ......................................................+15dBm RF_, LO Current (RF and LO is DC
shorted to GND through balun)......................................50mA Continuous Power Dissipation (Note 1) ..............................8.7W
θJA (Notes 2, 3)..............................................................+38°C/W θJC (Notes 1, 3)...............................................................7.4°C/W Operating Case Temperature Range
(Note 4)...................................................T C = -40°C to +85°C Junction Temperature......................................................+150°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10s).................................+300°C
(Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, V CC = +3.0V to Note 1:Based on junction temperature T J = T C + (θJC x V CC x I CC ). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150°C.
Note 2:Junction temperature T J = T A + (θJC x V CC x I CC ). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to https://www.doczj.com/doc/276744118.html,/thermal-tutorial .
Note 4:T C is the temperature on the exposed pad of the package. T A is the ambient temperature of the device and PCB.
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
(Typical Application Circuit optimized for the standard RF band (see Table 1),V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 2650MHz to 3250MHz, f IF = 350MHz, f RF < f LO , T C = -40°C to +85°C. Typical values are at V CC = +5.0V, P RF = -5dBm, P LO = 0dBm, f RF = 2600MHz, f LO = 2950MHz,
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 4_______________________________________________________________________________________
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1),V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 2650MHz to 3250MHz, f IF = 350MHz,
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________5
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1),V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 2650MHz to 3250MHz, f IF = 350MHz, f RF < f LO , T C = -40°C to +85°C. Typical values are at V CC = +5.0V, P RF = -5dBm, P LO = 0dBm, f RF = 2600MHz, f LO = 2950MHz,f IF = 350MHz, T C = +25°C, unless otherwise noted.) (Note 7)
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1), V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 1950MHz to 2550MHz, f IF = 350MHz, f RF > f LO , T C = -40°C to +85°C. Typical values are at V CC = +5.0V, P RF = -5dBm, P LO = 0dBm, f RF = 2600MHz, f LO = 2250MHz,
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 6_______________________________________________________________________________________
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 1950MHz to 2550MHz, f IF = 350MHz, f > f , T = -40°C to +85°C. Typical values are at V = +5.0V, P = -5dBm, P = 0dBm, f = 2600MHz, f = 2250MHz,
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________7
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the standard RF band (see Table 1). Typical values are at V CC = +3.3V, P RF = -5dBm,
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1), V CC = +4.75V to +5.25V, RF and LO ports are driven from 50?sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 2300MHz to 2900MHz, f LO = 1950MHz to 2550MHz, f IF = 350MHz,
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 8_______________________________________________________________________________________
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the standard RF band (see Table 1). Typical values are at V CC = +3.3V, P RF = -5dBm, P LO = 0dBm, f RF = 2600MHz, f LO = 2250MHz, f IF = 350MHz, T C = +25°C, unless otherwise noted.) (Note 7)
Note 5:
Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics .
Note 6:Not production tested.
Note 7:All limits reflect losses of external components, including a 0.8dB loss at f IF = 350MHz due to the 4:1 impedance trans-former. Output measurements taken at the IF outputs of Typical Application Circuit .
Note 8:Guaranteed by design and characterization.
Note 9:100% production tested for functional performance.
Note 10:RF frequencies below 2400MHz require external RF tuning similar to components listed in Table 2.
Note 11:Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50?source.
Note 12:Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers .
Typical Operating Characteristics
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________9
CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2800
2600
2400
78
91011
62200
3000
CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2800
2600
2400
7
8
9101162200
3000
CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2800
2600
2400
7
8
9
1011
62200
3000
INPUT IP3 vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T I P 3 (d B m )
23
24
2526
22RF FREQUENCY (MHz)
2800260024002200
3000
INPUT IP3 vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T I P 3 (d B m )
23
24
252622RF FREQUENCY (MHz)
2800260024002200
3000
INPUT IP3 vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T I P 3 (d B m )
23
24
2526
22RF FREQUENCY (MHz)
2800260024002200
3000
NOISE FIGURE vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
N O I S E F I G U R E (d B )
89
10111213
7RF FREQUENCY (MHz)
28002600
24002200
3000NOISE FIGURE vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
N O I S E F I G U R E (d B )
8
9101112137
RF FREQUENCY (MHz)
2800260024002200
3000NOISE FIGURE vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
N O I S E F I G U R E (d B )
89101112137
RF FREQUENCY (MHz)
2800260024002200
3000
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 10______________________________________________________________________________________
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
2L O -2R F R E S P O N S E (d B c )
60
70
80
50RF FREQUENCY (MHz)
2800260024002200
3000
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
2L O -2R F R E S P O N S E (d B c )
60
70
8050RF FREQUENCY (MHz)
280026002400
2200
3000
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
2L O -2R F R E S P O N S E (d B c )
60
70
80
50RF FREQUENCY (MHz)
2800260024002200
3000
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
3L O -3R F R E S P O N S E (d B c )
65
75
85
95
55RF FREQUENCY (MHz)
2800260024002200
3000
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
3L O -3R F R E S P O N S E (d B c )
65
7585
95
55RF FREQUENCY (MHz)
2800260024002200
3000
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
3L O -3R F R E S P O N S E (d B c )
65
75
85
95
55RF FREQUENCY (MHz)
2800260024002200
3000
INPUT P 1dB vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T P 1d B (d B m )
10
111213
9
RF FREQUENCY (MHz)
2800260024002200
3000
INPUT P 1dB vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T P 1d B (d B m )
10
11
1213
9
RF FREQUENCY (MHz)
2800260024002200
3000
INPUT P 1dB vs. RF FREQUENCY (LO > RF, STANDARD RF BAND)
I N P U T P 1d B (d B m )
10
11
1213
9RF FREQUENCY (MHz)
2800260024002200
3000
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________11
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
C H A N N E L I S O L A T I O N (d B )
35404550556030RF FREQUENCY (MHz)2800260024002200
3000
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
C H A N N E L I S O L A T I O N (d B )
3540
4550556030
RF FREQUENCY (MHz)
2800260024002200
3000
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
C H A N N E L I S O L A T I O N (d B )
3540
4550556030
RF FREQUENCY (MHz)
2800260024002200
3000
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
L O L E A K A G E A T I F P O R T (d B m )
-30
-20
-10
0-40LO FREQUENCY (MHz)
3150295027502550
3350
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
L O L E A K A G E A T I F P O R T (d B m )
-30-20-10
-40
LO FREQUENCY (MHz)
3150295027502550
3350
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
L O L E A K A G E A T I F P O R T (d B m )
-30
-20
-10
-40LO FREQUENCY (MHz)
3150295027502550
3350
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
R F -T O -I F I S O L A T I O N (d B )
20
30
4010RF FREQUENCY (MHz)
2800260024002200
3000
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
R F -T O -I F I S O L A T I O N (d B )
2030
4010RF FREQUENCY (MHz)
2800260024002200
3000
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
R F -T O -I F I S O L A T I O N (d B )
20
30
40
10RF FREQUENCY (MHz)
2800260024002200
3000
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 12______________________________________________________________________________________
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40
-30-20
-10-502300
3400
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40
-30
-20-10-502300
3400
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40
-30
-20
-10-502300
3400
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
2L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40-30
-20
-10-502300
3400
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
2L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40-30
-20
-10-502300
3400
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
2L O L E A K A G E A T R F P O R T (d B m )
3180
2960
2740
2520
-40
-30
-20
-10-502300
3400
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________13
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
LO FREQUENCY (MHz)
L O P O R T R E T U R N L O S S (d B )
3150
2900
2650
2400
2150
2015
105
0251900
3400
SUPPLY CURRENT vs. TEMPERATURE (T C )
(LO > RF, STANDARD RF BAND)
TEMPERATURE (°C)
S U P P L Y C U R R E N T (m A )
65
45
25
5
-15
360
370
380
390400
350
-35
85
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
R F P O R T R E T U R N L O S S (d B )
2520151050
30RF FREQUENCY (MHz)
2800260024002200
3000
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)
IF FREQUENCY (MHz)I F P O R T R E T U R N L O S S (d B )
4103202301402520151050
30
50500
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)
IF FREQUENCY (MHz)
I F P O R T R E T U R N L O S S (d B )
410
320
230
140
252015105030
50
500
Typical Operating Characteristics (continued)
(Typical Application Circuit , extended RF band (see Table 2), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 14______________________________________________________________________________________
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2200
2100
2000
1900
7
8
91011
61800
2300
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2200
2100
2000
1900
78
9101161800
2300
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
C O N V E R S I O N G A I N (d B )
2200
2100
2000
1900
7
8
9
1011
61800
2300
INPUT IP3 vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T I P 3 (d B m )
2200
2100
2000
1900
23
242526
221800
2300
INPUT IP3 vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T I P 3 (d B m )
2200
2100
2000
1900
23
242526
221800
2300
INPUT IP3 vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T I P 3 (d B m )
2200
2100
2000
1900
2324
2526
221800
2300
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)N O I S E F I G U R E (d B )
2200
2100
2000
1900
981011121371800
2300
NOISE FIGURE vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)N O I S E F I G U R E (d B )
220021002000190098101112137
18002300
NOISE FIGURE vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
N O I S E F I G U R E (d B )
220021002000190098101112137
18002300
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
2L O -2R F R E S P O N S E (d B c )
2200
2100
2000
1900
50
60
70
401800
2300
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
3L O -3R F R E S P O N S E (d B c )
2200
2100
2000
1900
65
85
7595
551800
2300
Typical Operating Characteristics (continued)
(Typical Application Circuit , extended RF band (see Table 2), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________
15
INPUT P 1dB vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T P 1d B (d B m )
2200
2100
2000
1900
1011
1213
91800
2300
INPUT P 1dB vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T P 1d B (d B m )
2200
2100
2000
1900
10
11
12
13
91800
2300
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
2L O -2R F R E S P O N S E (d B c )
2200
2100
2000
1900
50
6070
401800
2300
2LO-2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
2L O -2R F R E S P O N S E (d B c )
2200
2100
2000
1900
50
60
70
401800
2300
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
3L O -3R F R E S P O N S E (d B c )
2200
2100
2000
1900
65857595
551800
2300
3LO-3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
3L O -3R F R E S P O N S E (d B c )
2200
2100
2000
1900
65
85
75
95
551800
2300
INPUT P 1dB vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
I N P U T P 1d B (d B m )
2200
2100
2000
1900
10
111213
91800
2300
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
R F -T O -I F I S O L A T I O N (d B )
2200210020001900
20
30
101800
2300
RF FREQUENCY (MHz)
Typical Operating Characteristics (continued)
(Typical Application Circuit , extended RF band (see Table 2), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 16______________________________________________________________________________________
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
R F -T O -I F I S O L A T I O N (d B )
2200210020001900
2030101800
2300
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T I F P O R T (d B m )
2550
2450
2350
2250
-20
-10
-302150
2650
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T I F P O R T (d B m )
2550
2450
2350
2250
-20
-10
0-302150
2650
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)C H A N N E L I S O L A T I O N (d B )
220021002000190040
354555506030
18002300
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)
C H A N N E L I S O L A T I O N (d B )
220021002000190040
354555506030
18002300
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
RF FREQUENCY (MHz)C H A N N E L I S O L A T I O N (d B )
2200
2100
2000
1900
40
3545555060301800
2300
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
LO FREQUENCY (MHz)
L O L E A K A G E A T I F P O R T (d B m )
2550
2450
2350
2250
-20
-100-302150
2650
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
R F -T O -I F I S O L A T I O N (d B )
2200210020001900
20
30101800
2300
RF FREQUENCY (MHz)
Typical Operating Characteristics (continued)
(Typical Application Circuit , extended RF band (see Table 2), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________17
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30
-40
-20
-10-502300
3400
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30-40
-20-10-502300
3400
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30-40
-20-10-502300
3400
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
2L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30-40-20
-10-502300
3400
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
2L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30-40-20
-10-502300
3400
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
2L O L E A K A G E A T R F P O R T (d B m )
3180296027402520
-30
-40
-20
-10-502300
3400
LO FREQUENCY (MHz)
Typical Operating Characteristics (continued)
(Typical Application Circuit , extended RF band (see Table 2), V CC = +5.0V, LO is high-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 18______________________________________________________________________________________
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)
R F P O R T R E T U R N L O S S (d B )
2200210020001900
15102520
50301800
2300
RF FREQUENCY (MHz)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)
I F P O R T R E T U R N L O S S (d B )
410320230140
151025205030
50500IF FREQUENCY (MHz)
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)
I F P O R T R E T U R N L O S S (d B )
410320230140
151025205030
50500
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)
L O P O R T R E T U R N L O S S (d B )
29003150
265024002150
10
2015
50
251900
3400
LO FREQUENCY (MHz)
SUPPLY CURRENT vs. TEMPERATURE (T C )
(LO > RF, EXTENDED RF BAND)
S U P P L Y C U R R E N T (m A )
4565
255-15
380
360370
390400
350
-35
85
TEMPERATURE (°C)
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is low-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________19
INPUT IP3 vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
I N P U T I P 3 (d B m )
28002600240023
24
25
26
222200
3000
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
I N P U T I P 3 (d B m )
280026002400232425
26
222200
3000
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
C O N V E R S I O N G A I N (d B )
2800260024009
78
1011
6
2200
3000
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
C O N V E R S I O N G A I N (d B )
2800260024009
78
101162200
3000
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
N O I S E F I G U R E (d B )
280026002400891011121372200
3000RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
N O I S E F I G U R E (d B )
28002600240089101112137
2200
3000RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
N O I S E F I G U R E (d B )
28002600240089101112137
2200
3000
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
C O N V E R S I O N G A I N (d B )
2800260024009
78
10116
2200
3000
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
I N P U T I P 3 (d B m )
28002600240023
242526
222200
3000
RF FREQUENCY (MHz)
Typical Operating Characteristics (continued)
(Typical Application Circuit , standard RF band (see Table 1), V CC = +5.0V, LO is low-side injected for a 350MHz IF, P LO = 0dBm,P RF = -5dBm, T C = +25°C, unless otherwise noted.)
M A X 19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 20______________________________________________________________________________________
3RF-3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3R F -3L O R E S P O N S E (d B c )
28002600240065
7585
95
552200
3000
RF FREQUENCY (MHz)
2RF-2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2R F -2L O R E S P O N S E (d B c )
28002600240060
7080
50
2200
3000
RF FREQUENCY (MHz)
2RF-2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2R F -2L O R E S P O N S E (d B c )
2800260024006070
80
502200
3000
RF FREQUENCY (MHz)
2RF-2LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
2R F -2L O R E S P O N S E (d B c )
28002600240060
70
80
502200
3000
RF FREQUENCY (MHz)
3RF-3 LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3R F -3L O R E S P O N S E (d B c )
28002600240065
857595
552200
3000
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
(RF > LO, STANDARD RF BAND)
3R F -3L O R E S P O N S E (d B c )
28002600240065
75
85
95
552200
3000
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
I N P U T P 1d B (d B m )
28002600240010
11121392200
3000
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
I N P U T P 1d B (d B m )
28002600240010111213
92200
3000
RF FREQUENCY (MHz)
INPUT P 1dB vs. RF FREQUENCY (RF > LO, STANDARD RF BAND)
I N P U T P 1d B (d B m )
28002600240010
11
1213
92200
3000
RF FREQUENCY (MHz)