CIRCUIT TECHNOLOGY
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General Description
The ACT -PS512K8 is a Plastic High Speed, 4 Megabit (4,194,304 bits) CMOS Monolithic SRAM organized as 524,288 words by 8 bits.Designed for high-speed, high density, high reliablility, mass memory and fast cache system applications.
The plastic monolithic is input and output TTL compatible.Writing is executed when the write enable (WE)and chip enable (CE) inputs are low. Reading is accomplished when WE is high and CE and output enable (OE) are both low. Access time grades of 10ns 12ns, 15ns, 17ns, 20ns and 25ns are standard.
512Kx8
OE A 0 – A 18
I/O 0-7
8
WE CE
Pin Description I/O 0-7Data I/O A 0–18Address Inputs WE Write Enable CE Chip Enable OE Output Enable V CC Power Supply
V SS Ground NC
Not Connected
V ss V cc
Block Diagram – SOJ (L2)
Plastic Path? Features
s Low Power Monolithic CMOS 512K x 8 SRAM s Operating Temperature Range
q Full Military (-55°C to +125°C) q Industrial (-40°C to +85°C)
s Burn-in and Temperature Cycle Available s 10, 12, 15, 17, 20 & 25ns Access Times s +5V Power Supply
s Industry Standard Pinouts
q Center Power / Ground Pins
s TTL Compatible I/O s 3.3V Device I/O Interfacing
s JEDEC Standard 36 pin Plastic SOJ Package
q 36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ),
Aeroflex code# "L2"
s Fully Static Operation
q No Clocks or Refresh Required
4 Megabit Plastic Monolithic SRAM
ACT -PS512K8 High Speed
F I E I D
C
E
R T A E R O
F
L E
X L A
B S I N
C .
ISO 9001
Absolute Maximum Ratings
Symbol Parameter MINIMUM MAXIMUM Units T C Case Operating Temperature-55 +125°C T STG Storage Temperature-65+150°C P D Maximum Package Power Dissipation 1.0 W V G Maximum Signal Voltage to Ground-0.5V CC + 0.5V
V CC Power Supply Voltage-0.5+7.0V
Recommended Operating Conditions
Symbol Parameter Minimum Maximum Units V CC Power Supply Voltage+4.5+5.5V V SS Ground00V V IH Input High Voltage+2.2V CC + 0.5V V IL Input Low Voltage-0.5+0.8V T C Operating Temperature (Military)-55+125°C T C Operating Temperature (Industrial)-40+85°C
Truth Table
Mode CE WE OE Data I/O Supply Current
Standby H X X High Z I SB Output Disable L H H High Z I CC Read L H L Data OUT I CC
Write L L X Data IN I CC
Capacitance
(V IN & V OUT = 0V, f = 1MHz, T C = 25°C, unless otherwise noted, Guaranteed but not tested) Symbol Parameter Maximum Units
C IN Input Capacitance (A
0-18
, WE & OE)6pF
C OUT Output Capacitance (I/O0-7 & CE)8pF
DC Characteristics
(V CC = 5.0V, V SS = 0V, T C = -55°C to +125°C or -40°C to +85°C)
Parameter Sym Conditions Min Max Units Input Leakage Current I LI V CC = Max, V IN=V SS to V CC-10+10μA Output Leakage Current I LO CE = V IH, OE = V IH, V OUT=V SS to V CC-10+10μA Operating Supply Current I CC CE = V IL, OE = V IH,f=5MHz,Vcc=5.5V130 mA Standby Current I SB CE = V IH, OE= V IH, f=5MHz,Vcc=5.5V20mA Output Low Voltage V OL I OL = 8 mA, Vcc = 4.5V0.4V Output High Voltage V OH I OH = -4 mA, Vcc = 4.5V 2.4V Note: DC Test conditions: V IL = 0.3V, V IH = Vcc - 0.3V.
AC Characteristics
(V CC = 5.0V, V SS= 0V, T C = -55°C to +125°C or -40°C to +85°C) Read Cycle
Parameter Sym
–010
Min Max
–012
Min Max
–015
Min Max
–017
Min Max
–020
Min Max
–025
Min Max
Units
Read Cycle Time t RC101215172025ns Address Access Time t AA101215172025ns Chip Enable Access Time t ACE101215172025ns Output Hold from Address Change t OH333345ns Output Enable to Output Valid t OE56781012ns Chip Enable to Output in Low Z (1)t CLZ333333ns Output Enable to Output in Low Z (1)t OLZ000000ns Chip Deselect to Output in High Z (1)t CHZ5677810ns Output Disable to Output in High Z (1)t OHZ5677810ns Note 1. Guaranteed by design, but not tested
Write Cycle
Parameter Sym
–010
Min Max
–012
Min Max
–015
Min Max
–017
Min Max
–020
Min Max
–025
Min Max
Units
Write Cycle Time t WC101215172025ns Chip Enable to End of Write t CW7810121315ns Address Valid to End of Write t AW7810121315ns Data Valid to End of Write t DW5688910ns Write Pulse Width t WP7810121315ns Address Setup Time t AS000000ns Address Hold Time t AH000000ns Output Active from End of Write (1)t OW333345ns Write to Output in High Z (1)t WHZ5678810ns Data Hold from Write Time t DH000000ns Note 1. Guaranteed by design, but not tested
Data Retention Electrical Characteristics (Special Order Only)
V CC = 5.0V, V SS= 0V, T C = -55°C to +125°C or -40°C to +85°C)
Parameter Sym Test Conditions
All Speeds
Min Typ Max
Units
V CC for Data Retention V DR CE ≥ V CC – 0.2V2 5.5V Data Retention Current I CCDR1V CC = 3V0.5 2.0mA
Pin Numbers & Functions
36 Pins — SOJ
Pin #Function Pin #Function 1A 019NC 2A 120A 103A 221A 114A 322A 125A 423A 136CE 24A 147I/O 025I/O 48I/O 126I/O 59V CC 27V CC 10V SS 28V SS 11I/O 229I/O 612I/O 330I/O 713WE 31OE 14A 532A 1515A 633A 1616A 734A 1717A 835A 1818
A 9
36
NC
All dimensions in inches Dimensions in inches (.xxx)
Package Outline "L2" — SOJ Package, 36 Leads
11.30 (.445)11.05 (.435)
9.65 (.380)9.14 (.360)
.69(.027)
23.62 (.930)23.37 (.920)
10.29 (.405)10.03 (.395)
0.95(.037) 1.27(.050)
.43 (.017 3.76 (.148) MAX
Dimensions in millmeters mm
118
19
36MIN TYP +.10-.05+.004)-.002)
TYP
.004 MAX
Ordering Information (Typical)
Model Number
Options
Speed
Package
ACT -PS512K8N–010L2I None 10ns 36 Lead SOJ ACT -PS512K8W–012L2I Burn-in 12ns 36 Lead SOJ ACT -PS512K8X–015L2T Temp Cycle 15ns 36 Lead SOJ ACT -PS512K8Y–017L2T Temp Cycle & Burn-in 17ns 36 Lead SOJ ACT -PS512K8Y–020L2T Temp Cycle & Burn-in 20ns 36 Lead SOJ ACT -PS512K8Y–025L2T
Temp Cycle & Burn-in
25ns
36 Lead SOJ
010 = 10ns 012 = 12ns 015 = 15ns 017 = 17ns 020 = 20ns 025 = 25ns
Aeroflex Circuit Technology * Screened to the test methods of MIL-STD-883
Aeroflex Circuit Technology 35 South Service Road
Plainview New York 11830
Telephone: (516) 694-6700FAX: (516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
C I R C U I T T E C H N O L O G Y
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ACT-P S 512K 8N–010L2T
Memory Type S = Plastic SRAM Memory Depth, Locations Options
Memory Width, Bits N = None W = Burn-in *
X = Temperature Cycle *
Y = Burn-in & Temperature Cycle *Memory Speed, ns Package Type & Size L2 = 36 Pin Plastic SOJ
Electrical Testing
I = Industrial T emp, -40°C to +85°C T = Military Temp, -55°C to +125°C
Plastic Path Part Number Breakdown