PECVD工序段学习汇报
目录
1.PECVD设备概况
2.工作流程介绍
3.工艺步骤介绍
4.工艺配方的学习
5.常见的异常及原因
1. CentrothermPECVD 设备概况
Centrotherm 设备的基本功能单元包括：硅片装载区域、热风排风柜、炉体、气体系统、真空系统；同时，在装载区域配备了垂直层流系统，用于净化空气，设备的简要示意图如下图所示：
俯视图
平视图
2.工作流程介绍
操作控制单元
硅片装载区
炉体
特气柜
在CVD 工艺中用一部推车来手动将工艺舟移入设备中进行加
工，以及在加工结束后将工艺舟移除设备，推车锁定在设备中用作加工后冷却工艺舟的存放处。
（1）当一个工艺结束，那个炉管的软着陆系统（SiC 桨）会进入石英管中，把装有镀过膜硅片的石墨舟取出；（2）提升系统会将石墨舟从SiC
上取下，放入存储位置，进行冷却，同时滑轨会把一个新
工艺舟用作来在热化学工艺过程中作为硅片的机械承载器，为石墨舟。
装满的石墨舟由硅片装载系统送入石墨舟装载位置；（3）提升系统会将新装满的石墨舟送到SiC桨上；（4）软着陆系统会把石墨舟送入石英管，然后桨退出，关闭炉门，工艺开始允许；（5）之后，提升系统把刚刚在存储位置冷却的石墨舟送到滑轨上，由滑轨送到外界的自动硅片装载系统中。
全自动硅片装载系统，通过石墨舟传输系统可以把石墨舟送到自动化系统中，包括以下组件：石墨舟提升、石墨舟存储、石墨舟传输系统。
3.工艺步骤介绍
1. 工艺开始（processing started ）
2. 充氮（fill tube with N2）
3. 桨在高位进舟loading boat (paddle in upper position)
4. 桨降至低位paddle moves downwards
5. 桨在低位移出管外move out (paddle in lower position )
6. 管内抽真空并作压力测试（evacuate tube and pressure test）
7. 通过高频电源用氨气预清理和检查（plasma preclean and check with NH3）
8. 清洗管路1（purge cycle 1 ）
9. 测漏（leak test）
10. 恒温（wait until all zones are on min temperature）
11. 通过高频电源用氨气清理ammonia plasma preclean
12. 镀膜（deposition）
13.结束镀膜（end of deposition）
14. 抽真空及测试压力（evacuate tube and pressure test）
15. 清洗管路2（purge cycle 2）
16. 充氮（fill tube with N2）
17. 桨在低位进入管内（move in paddle – lower position）
18. SLS移到高位（SLS moving to upper position）
19. 退舟（unloading boat）
20.结束工艺（end of process）
4.工艺配方的学习
;
; c e n t r o t h e r m
;
; CESAR
;
; Name: pb\src\A1-NY.PRZ
;
; Date: 06/14/2014 17:57:38
;
Author = ctu
Comment = PE-SiN 156mm2 test-216 MC double layer n1/n2=2.3/2.05
CoolingTime = 2 LoadOrder = Default Version = 603 LoadMap =
Begin ; Version 21.07.2010_beta ; Tool: PECVD XXL ; Loading: 216 wafer, 6" multi, XXL ; Target: Test recipe for depositing double layer AR-coatings. ; The bottem layer will be about 10 nm thick with an RI of 2.3, the top layer with an RI of 2,05
; is matched for best cell efficiency in the module. ; Library SOFTLAND Library T5Z97 Library STANDARD
Library NITPESTD Library V ACUUM10 Library SCRUBBER ; ;
***************************************************************************************
; please do not change Variable TMIN = 395 ℃ ; ; ----------------------------------------------------------------------------------------- ; Process parameters deposition first layer N=2.3 T=10nm 18,2% SiH4 ; ; Deposition pressure Variable PRESS1 = 1600 mTor ; NH3 flow Variable NH3FL1 = 4.2 slm ; SiH4 Flow Variable SIH4FL1 = 1100 sccm ; Deposition power Variable HFPOWER1 = 6500 Watt ; Maximum current during deposition Variable MAXCURR1 = 20 A ; Time pulse on Variable PULSON1 = 4 ms ; Time pusle off Variable PULSOFF1 = 48 ms
依次调用的程序
第一层膜的折射率为2.3，厚度为10nm ；炉管压强为1600 mTor ；氨气流量为4.2 slm ，硅烷流速为1100 sccm ；射频功率为6500 Watt ；最大电流为20 A ；占空比为4/52；沉积时间为180 s 。
Variable PTS1 = 180 sec ;
; ----------------------------------------------------------------------------------------- ; Process parameters deposition second layer N=2.05 T=75nm ;
; Deposition pressure
Variable PRESS2 = 1600 mTor ; NH3 flow
; Variable NH3FL2 = 4.4 slm Variable NH3FL2 = 7.2 slm ; SiH4 Flow
; Variable SIH4FL2 = 500 sccm Variable SIH4FL2 = 800 sccm ; Deposition power
Variable HFPOWER2 = 7500 Watt ; Maximum current during deposition Variable MAXCURR2 = 24 A ; Time pulse on Variable PULSON2 = 5 ms ; Time pusle off
Variable PULSOFF2 = 35 ms ; Deposition time
Variable PTS2 = 375 sec ;
; ----------------------------------------------------------------------------------------- ; Process parameters deposition second layer N=2.05 T=75nm ;
; Deposition pressure
Variable PRESS3 = 2600 mTor ; NH3 flow ; Variable NH3FL2 = 4.4 slm Variable NH3FL3 = 0 slm ; SiH4 Flow
; Variable SIH4FL2 = 500 sccm Variable SIH4FL3 = 0 sccm ; Deposition power
Variable HFPOWER3 = 6500 Watt ; Maximum current during deposition Variable MAXCURR3 = 28 A ; Time pulse on
Variable PULSON3 = 2 ms ; Time pusle off
Variable PULSOFF3 = 12 ms
第二层膜的折射率为2.05，厚度为75nm ；炉管压强为1600 mTor ；氨气流量为7.2 slm ，硅烷流速为800 sccm ；射频功率为7500 Watt ；最大电流为24 A ；占空比为5/40；沉积时间为375 s 。 炉管压强为2600 mTor ；射频功率为6500 Watt ；最大电流为248A ；占空比为2/14；沉积时间为120 s ；未通气体为预处理过程。
Variable PTS3 = 120 sec ; ----------------------------------------------------------------------------------------- ; Process parameters deposition second layer N=2.05 T=75nm ; ; Deposition pressure Variable PRESS4 = 2000 mTor ; NH3 flow ; Variable NH3FL2 = 4.4 slm Variable NH3FL4 = 6 slm ; SiH4 Flow ; Variable SIH4FL2 = 500 sccm Variable SIH4FL4 = 0 sccm ; Deposition power Variable HFPOWER4 = 6500 Watt ; Maximum current during deposition
Variable MAXCURR4 = 24 A
; Time pulse on
Variable PULSON4 = 2 ms ; Time pusle off Variable PULSOFF4 = 12 ms ; Deposition time Variable PTS4 = 80 sec ; please do not apply any changes after this line ;
***************************************************************************************
以下为配方的详细内容，仍需进一步的学习了解。
; ; error treatment for evacuating and temperature setting Error ( Gas , HFGen ) Call ALABGAS ( 1 ) EndError Error ( Vacuum ) Call ALABV AC ( 1 , 1 ) EndError ; -------------------------------------------------- ; error treatment for loading Error ( T_Paddle , T_Spike ) Call ALABTEMP ( 1 , 1 ) EndError ; -------------------------------------------------- ; general error treatment at manual recipe abbort ; Terminat ABORTM ( 450 )
炉管压强为2000 mTor ；射频功率为6500 Watt ；
最大电流为24A ；占空比为2/14；沉积时间为80 s ；
只通氨气为氨气预处理过程。
; --------------------------------------------------
; Check if boat inside of tube
If Boat SLS Actual = 0
Boat Position Process = 2082 mm
Variable SELECT = 0
Input ( "Boat already in tube -> select: [process=0 ; unload=1]" , Variable SELECT , 0 , 1 )
Protocol ( "Boat already in tube -> select: [process=0 ; unload=1]" , Variable SELECT )
If Variable SELECT = 1
Goto UNLONLY
EndIf
EndIf
;
; --------------------------------------------------
; set defined status and standby conditions to start
; set alarm tolerance to 200℃, positive and negative abort toleances to 250℃.
Call START
T_Paddle All Setpoint = 450 ℃
; if layer is too thin towards load zone, a temperature ramp may help
T_PaddleLoadZoneSetpoint = 495 ℃
T_Paddle Cent-LZ Setpoint = 465 ℃
T_Paddle Center Setpoint = 450 ℃
T_Paddle Cent-GZ Setpoint = 423 ℃
T_PaddleGasZoneSetpoint = 420 ℃
;
Call TEMPTOL ( 200 , 250 , 250 , 5 , 10 , 10 )
;
; --------------------------------------------------
; log gas, temperature, vacuum every 60 seconds
Supervis SUPERV ( 1 , 1 , 1 , 60 )
;
; --------------------------------------------------
; Load
If Boat SLS Actual <> 0
Call FILLTUBE
Gas N2 V olume = 15 slm
Call LOAD ( Boat Position Process , 500 )
EndIf
;
; --------------------------------------------------
; Evacuate to 80 mTorr in 4 minutes maximum,
Call EV ACTUBE ( 4 , 80 )
; --------------------------------------------------
; for temperature stabilizing, increase pressure to 600mbar, pump down at T > 430℃Call TFILLTUB ( 800 )
Call MINTEMP ( Variable TMIN , 10 )
Vacuum Tube Pressure = 0
Call SCRUBON
Call EV ACTUBE ( 4 , 80 )
;
; --------------------------------------------------
; Error treatment during/after toxgas use
Error ( Gas , HFGen )
Call ALABGAS ( 2 )
EndError
Error ( Vacuum )
Call ALABV AC ( 2 , 1 )
EndError
Error ( T_Paddle , T_Spike )
Call ALABTEMP ( 2 , 1 )
EndError
;
Supervis SUPERV ( 1 , 1 , 1 , 30 )
;
; --------------------------------------------------
; NH3 + N2 Plasma for pre-treatment and pre-heat
;
Vacuum Tube Pressure = Variable PRESS4
Call NH3ON ( Variable NH3FL4 )
Call SIH4ON ( Variable SIH4FL4 )
Call WAITS ( 10 )
;
; --------------------------------------------------
; deposition 1st layer
Memory Text1 = "deposition"
HFGenRampPos = 0 Watt/min
HFGenRampNeg = 0 Watt/min
HFGen TAP = 2
HFGenPuls_On = Variable PULSON4
HFGenPuls_Off = Variable PULSOFF4
HFGen Switch = 1
HFGen Power = Variable HFPOWER4
;
Call V ACTOL ( 30 , 60 , 1 , 2 )
;
Call WAITDEPO ( 0 , 0 , Variable PTS4 , Variable MAXCURR4 , Variable NH3FL4 , Variable SIH4FL4 , Variable HFPOWER4 , Variable PRESS4 ) ;
; --------------------------------------------------
; end of deposition
Memory Text1 = "end of first deposition"
Call V ACTOL ( 10000 , 10000 , 1 , 2 )
HFGen Power = 0 Watt
HFGen Switch = 0
Call SIH4OFF
Call NH3OFF
Call EV ACTUBE ( 1 , 100 )
Call WAITS ( 5 )
; --------------------------------------------------
Memory Text1 = "Purging MFCs and Tube"
Vacuum Tube Pressure = 0
Gas NH3 AbDel = 0 min
Gas NH3 AlDel = 0 min
Gas NH3 Tube/Vac = 0
Gas NH3 NH3/N2 = 1
Gas NH3 Enable = 1
Gas NH3 V olume = 1 slm
Call WAITS ( 5 )
Gas NH3 V olume = 0 slm
Call WAITS ( 5 )
Gas NH3 V olume = 2 slm
Call WAITS ( 5 )
Gas NH3 V olume = 0 slm
Call WAITS ( 5 )
Gas NH3 V olume = 3 slm
Call WAITS ( 5 )
Gas NH3 V olume = 0 slm
Call WAITS ( 5 )
; --------------------------------------------------
;
Vacuum Tube Pressure = Variable PRESS3
Call NH3ON ( Variable NH3FL3 )
Call SIH4ON ( Variable SIH4FL3 )
Call WAITS ( 10 )
;
; --------------------------------------------------
; deposition 1st layer
Memory Text1 = "deposition"
HFGenRampPos = 0 Watt/min
HFGenRampNeg = 0 Watt/min
HFGen TAP = 2
HFGenPuls_On = Variable PULSON3
HFGenPuls_Off = Variable PULSOFF3
HFGen Switch = 1
HFGen Power = Variable HFPOWER3
;
Call V ACTOL ( 30 , 60 , 1 , 2 )
;
Call WAITDEPO ( 0 , 0 , Variable PTS3 , Variable MAXCURR3 , Variable NH3FL3 , Variable SIH4FL3 , Variable HFPOWER3 , Variable PRESS3 ) ;
; --------------------------------------------------
; end of deposition
Memory Text1 = "end of first deposition"
Call V ACTOL ( 10000 , 10000 , 1 , 2 )
HFGen Power = 0 Watt
HFGen Switch = 0
Call SIH4OFF
Call NH3OFF
Call EV ACTUBE ( 1 , 100 )
;
; --------------------------------------------------
; leaktest and wait until all zones are at minimum temperature
Call TEMPTOL ( 100 , 150 , 150 , 3 , 6 , 6 )
Call EV ACTUBE ( 4 , 80 )
Call LEAKTEST ( 50 , 0.5 )
;
; --------------------------------------------------
; prepare deposition 1st layer
Memory Text1 = "prepare deposition 1st layer"
Call TEMPTOL ( 45 , 60 , 40 , 1 , 2 , 4 )
;
Vacuum Tube Pressure = Variable PRESS1
Call NH3ON ( Variable NH3FL1 )
Call SIH4ON ( Variable SIH4FL1 )
Call WAITS ( 5 )
;
; --------------------------------------------------
; deposition 1st layer
Memory Text1 = "deposition"
HFGenRampPos = 0 Watt/min
HFGenRampNeg = 0 Watt/min
HFGen TAP = 2
HFGenPuls_On = Variable PULSON1
HFGenPuls_Off = Variable PULSOFF1
HFGen Switch = 1
HFGen Power = Variable HFPOWER1
;
Call V ACTOL ( 30 , 60 , 1 , 2 )
;
Call WAITDEPO ( 0 , 0 , Variable PTS1 , Variable MAXCURR1 , Variable NH3FL1 , Variable SIH4FL1 , Variable HFPOWER1 , Variable PRESS1 ) ;
; --------------------------------------------------
; end of deposition
Memory Text1 = "end of first deposition"
Call V ACTOL ( 10000 , 10000 , 1 , 2 )
;
; --------------------------------------------------
; prepare deposition 2nd layer
Memory Text1 = "prepare deposition second layer"
;
Vacuum Tube Pressure = Variable PRESS2
Gas NH3 V olume = Variable NH3FL2
Gas SiH4 V olume = Variable SIH4FL2
;
; --------------------------------------------------
; deposition
Memory Text1 = "deposition"
HFGenRampPos = 0 Watt/min
HFGenRampNeg = 0 Watt/min
HFGen TAP = 2
HFGenPuls_On = Variable PULSON2
HFGenPuls_Off = Variable PULSOFF2
HFGen Power = Variable HFPOWER2
;
Call V ACTOL ( 30 , 60 , 1 , 2 )
;
Call WAITDEPO ( 0 , 0 , Variable PTS2 , Variable MAXCURR2 , Variable NH3FL2 , Variable SIH4FL2 , Variable HFPOWER2 , Variable PRESS2 ) ;
; --------------------------------------------------
; end of deposition
Memory Text1 = "end of deposition second layer"
Supervis SUPERV ( 1 , 1 , 1 , 60 )
Call V ACTOL ( 10000 , 10000 , 1 , 2 )
HFGen Power = 0 Watt
HFGen Switch = 0
Call SIH4OFF
Call NH3OFF
Call EV ACTUBE ( 1 , 100 )
;
; --------------------------------------------------
; start purging and prepare for unload
Memory Text1 = "start purging and prepare for unload"
Call MFCEV AC
Call MFCPURGE
Call PURGE ( 0.5 , 0.5 , 1 )
Call MFCPGOFF
;
Call SCRUBOFF
;
; --------------------------------------------------
; Terminate error treatment
Label UNLONLY
;
Call TEMPTOL ( 150 , 200 , 200 , 1 , 2 , 2 )
Error ( Gas , HFGen )
EndError
Error ( Vacuum )
EndError
Error ( T_Paddle , T_Spike )
EndError
; --------------------------------------------------
; fill tube
Call FILLTUBE
Gas N2 V olume = 15 slm
;
; --------------------------------------------------
; disable manual abort, lower temperature to prevent overheating and Unload TermOff
T_Paddle All Setpoint = 420 ℃
T_Paddle All ActSet = 420 ℃
Call UNLOAD ( 500 )
T_Paddle All Setpoint = 450 ℃
;
; --------------------------------------------------
; stop supervising
SuperOff
;
Memory Text1 = "end of process"
System ProcFlag = 0
End
6.常见的异常及原因
产线最常见的表面发白、色差、白点，其中表面发白主要由于氮化硅膜较厚导致，可通过调节膜沉积时间来调整；色差片主要由于气路堵塞、石英管漏气、微波故障等导致；白斑主要由于前道小黑点导致。
表面发白色差片白斑