贴片3个脚
C001
A06
M073
QFN-6封装
IC表面编码
CCQ
09K
E7E0
AR982 SOT-143
61HL SOT-143
B83 4脚
10A10
22A15
F5H3 F5HE
222 SOT-23
MARK为ECIG,封装为SOT-23
BU1H SOT-323
39BBAE
AO
4MQU，封装为SOT-23的IC
B8SN7 SOT-23封装,
丝印:B8TX4 SOT-23封装,
丝印:W2H SOT-23封装,
丝印:ZTW SOT-23封装,
丝印:L231 SOT-23封装
,丝印:EA2 SOT-23封装,
丝印:8F SOT-23封装
M762
SCD7
BE30C
N611
10 8Z
FJKB1 FJJK5
TFT 3H0015
BA7
sot-23封装的，上标是X1YV与他垂直是10，标有A1FV与他垂直是16的是什么管子
贴片二极管上写着ZE20J
贴片二极管CCD MZ
贴片二极管第一行03A 第2行F6 5D
贴片二极管ACX
K7JA SOT-23
C251A
5V的稳压芯片，贴片封装,印字为8C032
NC
SN
36W
D.P
S3
J7
P03B
XP
D:P
62Z
A7
S3
KW
8C032
J7
27EI
WC
AFPL
AFPL
E601 E605
28C26
XB
LY
AP
2
ABNJ
KS5R
SOT23封装的丝印28G2G
BAs87 BAs88 BAs89
W3W
贴片二极管封装是1206的丝印是T72是什么型号SOT－23的上面标有OOOI
贴片二极管标有16LE4
00BC，封装SOT-23
丝印Txw3F，这个x看不清，像0也像U，用x代替了与二极管上面写着D写或5.5
SOT-89的，上面丝印为：BD S2L 和 DD S3F
2314
贴片三极管印字76ee,8626
贴片三极管标HG18
SSD
73W SOT-23
12W SOT-23
Y6W SOT-23
CB2C
22A15 22B12 10A10
BAT99 BAT98 BAT97 BAT9A BAT9B BAT9C BATA1 BATA2 BATA3
丝印BAU6X,BAU72.BAU79.BAU61 BAU62 BAU63 BAU64 BAU65 BAU66 BAU67 C2F G53
5A 0M
N010T
C28P
C30A
C33B
C33M
DGHG
E36L
EC11
EIJF
E33U
E33J
E33N
E30B
E30A
E30H
E33H
7KFG
7KFD
E50H
E50A
MD5-30
70FB
7DEK
E50H
E50A
65Z5
662K
59GC
59I6
D3GK
633
7AJA
EDJG
EDJJ
A08T
A07T
C28J
C33B
65XB
65X8
65X2
65ZD
2108B
501C
APJA
65E9
65K5
C22A
C33A
C27H
C28J
A5GV
E33H
E33J
E50T
E33Q
E33V
E33N
E33L
L56T
L50T
L40T
L50E
L36T
L33T
L45T
M153
BAt88 BAt89 BAt8A BAt8B BAT99 BAT98 BAT97
BAT9A BAT9B BAT9C
BATA1 BATA2 BATA3
BAUA7 BAUA8 BAUA9 BAUAA BAs84 BAs83 BAs82
BAP66 BAP76 BAP86
A006/A007/A00X 009x 00AX
C34
BAB75
EDT
72X31
N5JI
54HH
3A08G
APJA
5AGJ
5CFK
5BHJ
5BGJ
5BFE
5BJC
65Z5
662K
54FK
XD28
59GC
59I6
AAB66
S652
65T3
65XB
65X8
65X2
6621
6622
633
7AJA
DGHG
7KFG
7KFD
70FB
7DEK
E50H
E50A
E50G
13HG
B6W
L50P
L33D
75FE
7AIK DBIL
E28N
E30N
E33U 21008 0622-50 501C
501D
E50N 853050189 RM06 8805/50 8806 2100B
C22A
C33A
C33B
E5SA
R113B
M7S
E2H
TB170
64A
65A
T8
A4s
S1g ZBBF
3A03
B85
212Z
K7M4
K7B0
1FP
8A
8U
9V
W08
43W
Mos W04 A7N Y2K
N28 N29 33W LD3
M36 B3 HT56 6CW 15H M6G2 LEY2 W2W W1P 1PK NB46 NB43 ACA30 W2D 51
8A ND55 PD54 618
L6HN 501 GTF
6T
1AK 007F NS65 5Ct
V30
A6t WV5 NF DM CEQ P11
DFRD KQ49 BJT2G PC55 NU79 E33M CFRE OK59 3I38 AZO
X1YV A1FV A1YQ 113N M43B 1301 1FW
A4
3Ft 303
A7W
Z3W 304 DB3
1FT
5CW
J3076 M4B
S401
A2SM U1J 6.7Y NB30 WUS ADW63 SAW AAX
M5C LC99K 024W T1a88 6Dt
3EE
t06
35
K46
2FN KYZ-U5 TS5
2FV GJ-YQ2 12P KJ
XH
A6N
8UN ZCW14 ZDW05 L05
W2T GL
V18
E11
9AB 3515 D2E02 2F5
R31E HD2K DV5
D019I A4W14 K72x7 1A15 W1A
K1NM6 J6Y
A013 HY30 L33 076A S2AD K6
LD3
10M 43t
H2F
H1P BWA MP
A09T A1215 A3W KA
12A 09R AR8
A2BV A2BN L4W YD
HR
5A DBRV KYZ-U5 UPRX DKQG CY DKRN AL
BL BDS2L DDS3F KA Bon IY AQY 39 46 47 64 BEQE YL 9X AE RW BQ
02
8C621 GY721 DJ 56
NS 13 39 97 93 78 501C 4B 0C FL 38 8A 109 M0N KZ1
Z58
A1YQ N502 JSt
N6I0N N019N 358
A08K TIA13 016J K46 662L 65ZB SO-1R KK9 SOIBB 20952 A7H
G13W B56
M13 KK9 008C WT8 8512 8525 431M HH85 sSN
W6W W6Y S6P3C S4K7C
507
723
K30A
JH
JM
425 T2 955E 6T
MA
A21
K52
116AP
K72 V1
W32
J
A6SUB
FS00
BM0Z
M15B
252
X4YA
EL15
N620
IM2603 WM6
450 W13 460 WA3 453 WK1 450 WL2 AH
A60D SAGH SAGF
A7v9G
7ZGGG
B3t
8B
VBGG
A006
ESA
LAZ
P2
247H
A69w 1702
A7XK8
CM3Y XOBV
AN51
CP2H
D55
A09
EO1V
015C 015G TACU VLR
CJ4
BW2
X1PV
C01A BJLD
STs
12W PDTC114TK 1CW 1Cp 511
BKD JF BHD
N81Y AEAL
0.138
S72
XF
8W1
KY 8B6
A1SSH
A2SSH
K20
BD RK
C019
V2GBF
A1y39
6yx
R12
R52 CE
DARB B1YU B2YV 702X F36
H6
L1xVC N019Q AMA C8
M5W MSW H7 BBVAA A91A 31803
2012-03-05,15:54:08 资料邮件回复
K11F SOT-23-5
BF65 SC70-5
A153
58BW
VC 11 66
M117
M305
芯片表面打“15”，SOT23-5封装表面打“16”，SOT23-5
A548
5BUW
MDJX sot-23-5
73JU
73GJ
73JE
5个脚上面印的是90B27 LDAR
AAR9
1G122
背光IC,丝印是506C
A25EF
J59A
VMR 或者VMK
H1JE
7EFA
T2DP T2FF
B48Y
LTSXe3
51E
JSAR
A4A
A12
AS
C20A
A16A
805 封装:SOT23-5
TF06
LB21
H2
37XB 37XA
F2CA
45CB
ACDP
daacm 五脚
15TH
C397
H2
A63A
MDJX
DAG1H DAGOZ
E30
E30/BJX
B1YA
B1UD
SA
CG9R
表面印字 C6PH和C6SF
丝印打FVG SOT23-5
5脚标记 FANT
电源的芯片一个是SOT23-5的，丝印是A60yE；8JAA
8JAB
8JAC
8JB1
8JB2
8JB3
8JB4
8JB5
8JB6
BDXX
B3A,sot-25;
AA
SOT-23-5 印字:THHD
芯片丝印CR0810-A
IC上面丝印是20A32和32A22，
SOT25封装芯片上印BES
灯控IC 上面写着 LTYN
丝印：AYAC ,封装:SC70
丝印为 ICPDAS ST-01 数
I6GBH
ODO 0D0
AD4R
DZLW
AAB
DABON
ADKQ
BLH
AB10A 23-5
HIJE
BUF60
B8E SOT23-5
AAF33
SA8JT
E6T
LTH7
2YL6
ACA90
A772
A777
A773
丝印名为L30L或L30K,封装为SOT-23-5
5脚电源贴片IC（SOT-23-5）丝印4XX9;4XX5 丝印D1924的SOT-23-5封装的元件
BPSQ SOT-23-5
UQRW sot-23-5
电源贴片IC型号（IC上丝印ID97N）
丝印代码为co - sow的5脚IC
印字112HX 封装为SOT23-5的ic
丝印为1A2G的,封装为SOT23-5,
31R5 SOT-23-5
90B16 SOT-23-5
.芯片上丝印psri,SOT-23-5
321
YCXB
SOT-25封装的管子，上面印着EDZ
JRJX
C3EG
DJ-811
1128C
A103
印字ACCL SOT-23-5
EQ6J
T30T
X50T
U18H
C2KL
CWWE
TF83
S2A
6333
4XK1 SOT-23-5
4XX1 SOT-23-5
4XZ1 SOT-23-5
4B21 SOT-23-5
DG SOT-353-5(SC70)
EG SOT-353-5(SC70)
CG SOT-353-5(SC70)
HG SOT-353-5(SC70)
PSRE
GCLR,是五个脚的双排,
ED2F DE9R ED4U
SOT23-5封装代码G85
SOT23-5丝印为HA04
1F21 sot-23-5封装的IC型号
LXZ6
A2JB
A1VR
RT6C
2YL7 SOT-23-5
9Aa1J，封装为TSOT23-5，
9AaOb
9Aa0N
9AaRg
9AaAR
贴片器件上面标着9Aa0Z
9Aa3S SOT-23-5
9AaBJ
9Aa0W
9Aa0y
9Aa0M
5336F
IN69D
AWCO
贴片5脚 33R1
摄像头用的电源IC，SOT-23-5, 丝印BQJV，1D2G 23-5封装
M3KE
M3KK
型号 标志 封装型号 标志 封装型号 标志 封装型号 标志 封装2PA1576Q FtQ SC-70BC808W 5Ht SOT323BC847BW 1Ft SOT323BC857B 3Fp SOT23 2PA1576R FtR SC-70BC808-16 5Ep SOT23BC847C 1Gp SOT23BC857BS 3Ft SC-88 2PA1576S FtS SC-70BC808-16W 5Et SOT323BC847CT 1G SC-75BC857BT 3F SC-75 2PA1774Q YQ SC-75BC808-25 5Fp SOT23BC847CW 1Gt SOT323BC857BW 3Ft SOT323 2PA1774R YR SC-75BC808-25W 5Ft SOT323BC847W 1Ht SOT323BC857C 3Gp SOT23 2PA1774S YS SC-75BC808-40 5Gp SOT23BC848 1Mp SOT23BC857CT 3G SC-75 2PB1219AQ DtQ SC-70BC808-40W 5Gt SOT323BC848A 1Jp SOT23BC857CW 3Gt SOT323 2PB1219AR DtR SC-70BC817 6Dp SOT23BC848AT 1J SC-75BC857W 3Ht SOT323 2PB1219AS DtS SC-70BC817W 6Dt SOT323BC848AW 1Jt SOT323BC858 3Mp SOT23 2PB709AQ BQ SC-59BC817-16 6Ap SOT23BC848B 1Kp SOT23BC858A 3Jp SOT23 2PB709AR BR SC-59BC817-16W 6At SOT323BC848BT 1K SC-75BC858AT 3J SC-75 2PB709AS BS SC-59BC817-25 6Bp SOT23BC848BW 1Kt SOT323BC858AW 3Jt SOT323 2PB710AQ DQ SC-59BC817-25W 6Bt SOT323BC848C 1Lp SOT23BC858B 3Kp SOT23 2PB710AR DR SC-59BC817-40 6Cp SOT23BC848CT 1L SC-75BC858BT 3K SC-75 2PB710AS DS SC-59BC817-40W 6Ct SOT323BC848CW 1Lt SOT323BC858BW 3Kt SOT323 2PC4081Q ZtQ SC-70BC818 6Hp SOT23BC848W 1Mt SOT323BC858C 3Lp SOT23 2PC4081R ZtR SC-70BC818W 6Ht SOT323BC849 2Dp SOT23BC858CT 3L SC-75 2PC4081S ZtS SC-70BC818-16 6Ep SOT23BC849B 2Bp SOT23BC858CW 3Lt SOT323 2PC4617Q ZQ SC-75BC818-16W 6Et SOT323BC849BW 2Bt SOT323BC858W 3Mt SOT323 2PC4617R ZR SC-75BC818-25 6Fp SOT23BC849C 2Cp SOT23BC859 4Dp SOT23 2PC4617S ZS SC-75BC818-25W 6Ft SOT323BC849CW 2Ct SOT323BC859A 4Ap SOT23 2PD1820AQ AtQ SC-70BC818-40 6Gp SOT23BC849W 2Dt SOT323BC859AW 4At SOT323 2PD1820AR AtR SC-70BC818-40W 6Gt SOT323BC850 2Hp SOT23BC859B 4Bp SOT23 2PD1820AS AtS SC-70BC846 1Dp SOT23BC850B 2Fp SOT23BC859BW 4Bt SOT323 2PD601AQ ZQ SC-59BC846A 1Ap SOT23BC850BW 2Ft SOT323BC859C 4Cp SOT23 2PD601AR ZR SC-59BC846AT 1A SC-75BC850C 2Gp SOT23BC859CW 4Ct SOT323 2PD601AS ZS SC-59BC846AW 1At SOT323BC850CW 2Gt SOT323BC859W 4Dt SOT323 2PD602AQ XQ SC-59BC846B 1Bp SOT23BC850W 2Ht SOT323BC860 4Hp SOT23 2PD602AR XR SC-59BC846BT 1B SC-75BC856 3Dp SOT23BC860A 4Ep SOT23 2PD602AS XS SC-59BC846BW 1Bt SOT323BC856A 3Ap SOT23BC860AW 4Et SOT323 BC807 5Dp SOT23BC846W 1Dt SOT323BC856AT 3A SC-75BC860B 4Fp SOT23 BC807W 5Dt SOT323BC847 1Hp SOT23BC856AW 3At SOT323BC860BW 4Ft SOT323 BC807-16 5Ap SOT23BC847A 1Ep SOT23BC856B 3Bp SOT23BC860C 4Gp SOT23 BC807-16W 5At SOT323BC847AT 1E SC-75BC856BT 3B SC-75BC860CW 4Gt SOT323 BC807-25 5Bp SOT23BC847AW 1Et SOT323BC856BW 3Bt SOT323BC860W 4Ht SOT323 BC807-25W 5Bt SOT323BC847B 1Fp SOT23BC856W 3Dt SOT323BC868 CAC SOT89 BC807-40 5Cp SOT23BC847BPN 13t SC-88BC857 3Hp SOT23BC868-10 CBC SOT89 BC807-40W 5Ct SOT323BC847BS 1Ft SC-88BC857A 3Ep SOT23BC868-16 CCC SOT89 BC808 5Hp SOT23BC847BT 1F SC-75BC857AT 3E SC-75BC868-25 CDC SOT89 BC857AW 3Et SOT323BC869 CEC SOT89 BC869-16 CGC SOT89BCV49 EG SOT89BCX51-10 AC SOT89BF820W 1Vt SOT323 BC869-25 CHC SOT89BCV61 1Mp SOT143B BCX51-16 AD SOT89BF821 1Wp SOT23 BCF29 C7p SOT23BCV61A 1Jp SOT143B BCX52 AE SOT89BF822 1Xp SOT23 BCF30 C8p SOT23BCV61B 1Kp SOT143B BCX52-10 AG SOT89BF822W 1Wt SOT323
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1505 TRANSISTOR （PNP ） FEATURES · Excellent h FE linearity: · Complementary to KTC3876 MAXIMUM RATINGS (T a =25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -35 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -30 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-35V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA h FE(1) V CE =-1V,I C =-100mA 70 400 DC current gain h FE(2) V CE =-6V,I C =-400mA 25 Collector-emitter saturation voltage V CE(sat) I C =-100mA,I B =-10mA -0.25V Base-emitter voltage V BE V CE =-1V,I C =-100mA -1 V Transition frequency f T V CE =-6V,I C =-20mA 200 MHz Collector output capacitance C ob V CB =-6V,I E =0,f=1MHz 13 pF CLASSIFICATION OF h FE(1) Rank O Y GR Range 70-140 120-240 200-400 Marking AZO AZY AZG COLLECTOR ℃ A,May,2011 https://www.doczj.com/doc/0b18192071.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
三极管型号大全： 品名极性管脚功能参数 MPSA42NPN21E电话视频放大300V0.5A0.625W MPSA92PNP21E电话视频放大300V0.5A0.625W MPS2222ANPN21高频放大75V0.6A0.625W300MHZ 9011NPNEBC高频放大50V30m三极管的检测A0.4W150MHz 9012PNP贴片低频放大50V0.5A0.625W 9013NPNEBC低频放大50V0.5A0.625W 9013NPN贴片低频放大50V0.5A0.625W 9014NPNEBC低噪放大50V0.1A0.4W150MHZ9015PNPEBC低噪放大50V0.1A0.4W150MHZ 9018NPNEBC高频放大30V50MA0.4W1GHZ 8050NPNEBC高频放大40V1.5A1W100MHZ 8550PNPEBC高频放大40V1.5A1W100MHZ 2N2222NPN4A高频放大60V0.8A0.5W25/200NSβ=45 2N2222ANPN小铁高频放大75V0.6A0.625W300MHZ 2N2369NPN4A开关40V0.5A0.3W800MHZ 2N2907NPN4A通用60V0.6A0.4W26/70NSβ=200 2N3055NPN12功率放大100V15A115W 2N3440NPN6视放开关450V1A1W15MHZ 2N3773NPN12音频功放开关160V16A150WCOP2N6609 2N3904NPN21E通用60V0.2Aβ=100-400 2N3906PNP21E通用40V0.2Aβ=100-4002N5401PNP21E视频放大160V0.6A0.625W100MHZ 2N5551NPN21E视频放大160V0.6A0.625W100MHZ 2N5685NPN12音频功放开关60V50A300W 2N6277NPN12功放开关180V50A250W 2N6609PNP12音频功放开关160V15A150WCOP2N37732N6678NPN12音频功放开关650V15A175W15MHZ 2N6718NPN小铁音频功放开关100V2A2W50MHZ 3DA87ANPN6视频放大100V0.1A1W 3DG6ANPN6通用15V20mA0.1W100MHz 3DG6BNPN6通用20V20mA0.1W150MHz 3DG6CNPN6通用20V20mA0.1W250MHz 3DG6DNPN6通用30V20mA0.1W150MHz 3DG12CNPN7通用45V0.3A0.7W200MHz 3DK2BNPN7开关30V30mA0.2W 3DK4BNPN7开关40V0.8A0.7W 3DK7CNPN7开关25V50mA0.3W 3DD15DNPN12电源开关300V5A50W 3DD102CNPN12电源开关300V5A50W 3522V5.2V稳压管录像机用 A634PNP28E音频功放开关40V2A10W A708PNP6NF/S80V0.7A0.8W A715CPNP29音频功放开关35V2.5A10W160MHZ
A,Jun,2012 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT1616 TRANSISTOR (NPN) FEATURES z Audio frequency power amplifier z Medium speed switching MARKING:16· MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =2mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current I EBO V EB =6V, I C =0 100 nA h FE(1) V CE =2V, I C =100mA 135 600 DC current gain h FE(2) V CE =2V, I C =1A 81 Collector-emitter saturation voltage V CE(sat) I C =1A, I B =50mA 0.3 V Collector-emitter saturation voltage V BE(sat) I C =1A, I B =50mA 1.2 V Base-emitter voltage V BE V CE =2V, I C =50mA 0.6 0.7 V Transition frequency f T V CE =2V,I C =100mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 19 pF CLASSIFICATION OF h FE(1) RANK Y G L RANGE 135~270 200~400 300~600 Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 6 V I C Collector Current 1 A P C Collector Power Dissipation 750 mW R ΘJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ https://www.doczj.com/doc/0b18192071.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
常用三极管型号及参数 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W **NMO场效应 IRFPG42 1000V 4A 150W ** NMO场效应 IRFPF40 900V 4.7A 150W ** NMO场效应 IRFP9240 200V 12A 150W ** PMOS场效应 IRFP9140 100V 19A 150W **PMOS场效应 IRFP460 500V 20A 250W ** NMO场效应 IRFP450 500V 14A 180W **NMO场效应IRFP440 500V 8A 150W **NMO场效应IRFP353 350V 14A 180W **NMO场效应IRFP350 400V 16A 180W **NMO场效应IRFP340 400V 10A 150W **NMO场效应IRFP250 200V 33A 180W **NMO场效应IRFP240 200V 19A 150W **NMO场效应IRFP150 100V 40A 180W **NMO场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFP140 100V 30A 150W **NMO场效应IRFP054 60V 65A 180W **NMO场效应IRFI744 400V 4A 32W **NMO场效应IRFI730 400V 4A 32W **NMO场效应IRFD9120 100V 1A 1W **NMO场效应IRFD123 80V 1.1A 1W **NMO场效应IRFD120 100V 1.3A 1W **NMO场效应IRFD113 60V 0.8A 1W **NMO场效应IRFBE30 800V 2.8A 75W **NMO场效应
贴片3个脚 C001 A06 M073 QFN-6封装 IC表面编码 CCQ 09K E7E0 AR982 SOT-143 61HL SOT-143 B83 4脚 10A10 22A15 F5H3 F5HE 222 SOT-23 MARK为ECIG,封装为SOT-23 BU1H SOT-323 39BBAE AO 4MQU，封装为SOT-23的IC B8SN7 SOT-23封装, 丝印:B8TX4 SOT-23封装, 丝印:W2H SOT-23封装, 丝印:ZTW SOT-23封装, 丝印:L231 SOT-23封装 ,丝印:EA2 SOT-23封装, 丝印:8F SOT-23封装 M762 SCD7 BE30C N611 10 8Z FJKB1 FJJK5 TFT 3H0015 BA7 sot-23封装的，上标是X1YV与他垂直是10，标有A1FV与他垂直是16的是什么管子 贴片二极管上写着ZE20J 贴片二极管CCD MZ 贴片二极管第一行03A 第2行F6 5D 贴片二极管ACX K7JA SOT-23
C251A 5V的稳压芯片，贴片封装,印字为8C032 NC SN 36W D.P S3 J7 P03B XP D:P 62Z A7 S3 KW 8C032 J7 27EI WC AFPL AFPL E601 E605 28C26 XB LY AP 2 ABNJ KS5R SOT23封装的丝印28G2G BAs87 BAs88 BAs89 W3W 贴片二极管封装是1206的丝印是T72是什么型号SOT－23的上面标有OOOI 贴片二极管标有16LE4 00BC，封装SOT-23 丝印Txw3F，这个x看不清，像0也像U，用x代替了与二极管上面写着D写或5.5 SOT-89的，上面丝印为：BD S2L 和 DD S3F 2314 贴片三极管印字76ee,8626 贴片三极管标HG18
三极管型号及参数 晶体管型号反压Vbe0电流Icm功率Pcm放大系数特征频率管子类型IRFU02050V15A42W**NMOS场效应IRFPG421000V4A150W**NMOS场效应IRFPF40900V 4.7A150W**NMOS场效应IRFP9240200V12A150W**PMOS场效应IRFP9140100V19A150W**PMOS场效应IRFP460500V20A250W**NMOS场效应IRFP450500V14A180W**NMOS场效应IRFP440500V8A150W**NMOS场效应IRFP353350V14A180W**NMOS场效应IRFP350400V16A180W**NMOS场效应IRFP340400V10A150W**NMOS场效应IRFP250200V33A180W**NMOS场效应IRFP240200V19A150W**NMOS场效应IRFP150100V40A180W**NMOS场效应晶体管型号反压Vbe0电流Icm功率Pcm放大系数特征频率管子类型IRFP140100V30A150W**NMOS场效应IRFP05460V65A180W**NMOS场效应IRFI744400V4A32W**NMOS场效应IRFI730400V4A32W**NMOS场效应IRFD9120100V1A1W**NMOS场效应IRFD12380V 1.1A1W**NMOS场效应IRFD120100V 1.3A1W**NMOS场效应IRFD11360V0.8A1W**NMOS场效应IRFBE30800V 2.8A75W**NMOS场效应IRFBC40600V 6.2A125W**NMOS场效应IRFBC30600V 3.6A74W**NMOS场效应IRFBC20600V 2.5A50W**NMOS场效应IRFS9630200V 6.5A75W**PMOS场效应IRF9630200V 6.5A75W**PMOS场效应IRF9610200V1A20W**PMOS场效应晶体管型号反压Vbe0电流Icm功率Pcm放大系数特征频率管子类型IRF954160V19A125W**PMOS场效应IRF953160V12A75W**PMOS场效应IRF9530100V12A75W**PMOS场效应IRF840500V8A125W**NMOS场效应IRF830500V 4.5A75W**NMOS场效应IRF740400V10A125W**NMOS场效应IRF730400V 5.5A75W**NMOS场效应IRF720400V 3.3A50W**NMOS场效应IRF640200V18A125W**NMOS场效应IRF630200V9A75W**NMOS场效应IRF610200V 3.3A43W**NMOS场效应IRF54180V28A150W**NMOS场效应IRF540100V28A150W**NMOS场效应IRF530100V14A79W**NMOS场效应
全系列常用三极管型号参数资料 编者按：这些虽不能涵盖所有的三极管型号，例如3DD系列等，但是都是极其常用的型号，例如901系列，简直是无所不在。在网上查的电子元件手册都是卖书的广告，找到点参数型号确实不易。 名称封装极性功能耐压电流功率频率配对管 D633 28 NPN 音频功放开关100V 7A 40W 达林顿 9013 21 NPN 低频放大50V 0.5A 0.625W 9012 9014 21 NPN 低噪放大50V 0.1A 0.4W 150HMZ 9015 9015 21 PNP 低噪放大50V 0.1A 0.4W 150MHZ 9014 9018 21 NPN 高频放大30V 0.05A 0.4W 1000MHZ 8050 21 NPN 高频放大40V 1.5A 1W 100MHZ 8550 8550 21 PNP 高频放大40V 1.5A 1W 100MHZ 8050 2N2222 21 NPN 通用60V 0.8A 0.5W 25／200NS 2N2369 4A NPN 开关40V 0.5A 0.3W 800MHZ 2N2907 4A NPN 通用60V 0.6A 0.4W 26／70NS 2N3055 12 NPN 功率放大100V 15A 115W MJ2955 2N3440 6 NPN 视放开关450V 1A 1W 15MHZ 2N6609 2N3773 12 NPN 音频功放开关160V 16A 50W 2N3904 21E NPN 通用60V 0.2A 2N2906 21C PNP 通用40V 0.2A 2N2222A 21铁NPN 高频放大75V 0.6A 0.625W 300MHZ 2N6718 21铁NPN 音频功放开关100V 2A 2W 2N5401 21 PNP 视频放大160V 0.6A 0.625W 100MHZ 2N5551 2N5551 21 NPN 视频放大160V 0.6A 0.625W 100MHZ 2N5401 2N5685 12 NPN 音频功放开关60V 50A 300W 2N6277 12 NPN 功放开关180V 50A 250W 9012 21 PNP 低频放大50V 0.5A 0.625W 9013 2N6678 12 NPN 音频功放开关650V 15A 175W 15MHZ 9012 贴片PNP 低频放大50V 0.5A 0.625W 9013
贴片三极管上的印字与真实名称的对照表 印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA
贴片三极管封装上的印字，与真实名称的对照表 印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. h FE :200 TYP .(V CE =-1V,I C =-100mA) z Complimentary to 2SD596. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -30 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -700 mA P D Total Device Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified ) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -30 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-30 V ,I E =0 -0.1 μA Emitter cut-off current I EBO V EB = -5V , I C =0 -0.1 μA h FE(1)* V CE = -1V,I C = -100mA 110 400 DC current gain h FE(2)* V CE =-1V,I C = -700mA 50 Collector-emitter saturation voltage V CE(sat) * I C =-700 mA, I B = -70mA -0.6 V Base-emitter voltage V BE * V CE =-6V, I C =-10mA -0.6 -0.7 V Transition frequency f T V CE = -6V,I C = -10mA 160 MHz Collector Output Capacitance C ob V CB =-6V,I E =0,f=1MH Z 17 pF * Pulse test : Pulse width ≤350μs,Duty Cycle ≤2%. CLASSIFICATION OF h FE (1) Marking BV1 BV2 BV3 BV4 BV5 Range 110-180 135-220 170-270 200-320 250-400 ℃ A,May,2011
3.COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) FEATURES z High Current Gain Bandwidth Product MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E = 0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 18 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 4 V Collector cut-off current I CBO V CB =20V,I E = 0 0.1 nA Collector cut-off current I CEO V CE =15V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =1mA 28 270 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =10mA,I B =1mA 1.42V Transition frequency f T V CE =5V,I C =50mA,f=400MHz 800 MHz CLASSIFICATION OF h FE RANK D E F G H I J RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270 Symbol Parameter Value Unit V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 18 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 0.4 W R θJA Thermal Resistance From Junction To Ambient 312.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ A,Jun,2011 https://www.doczj.com/doc/0b18192071.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
这些虽不能涵盖所有的三极管型号，例如3DD系列等，但是都是极其常用的型号，例如901系列，简直是无所不在。在网上查的电子元件手册都是卖书的广告，找到点参数型号确实不易。 S9013是NPN型三极管，放大倍数分为六级，在三极管上有标识： D级：64-91 E级：78-112 F级：96-135 G级：112-166 H级：144-220 I级：190-300 名称封装极性功能耐压电流功率频率配对管 D63328NPN音频功放开关100V7A40W达林顿 9013 21 NPN 低频放大50V0. 5A0. 625W 9012 9014 21 NPN 低噪放大50V0. 1A0. 4W 150HM Z9015 9015 21 PNP 低噪放大50V0. 1A0. 4W 150MHZ 9014 901821NPN高频放大30V0.05A0.4W1000MHZ 805021NPN高频放大40V1.5A1W100MHZ8550 855021PNP高频放大40V1.5A1W100MHZ8050 2N222221NPN通用60V0.8A0.5W25／200NS 2N23694ANPN开关40V0.5A0.3W800MHZ 2N29074ANPN通用60V0.6A0.4W26／70NS 2N305512NPN功率放大100V15A115WMJ2955 2N34406NPN视放开关450V1A1W15MHZ2N6609 2N377312NPN音频功放开关160V16A50W 2N390421ENPN通用60V0.2A 2N290621CPNP通用40V0.2A 2N2222A21铁NPN高频放大75V0.6A0.625W300MHZ 2N671821铁NPN音频功放开关100V2A2W 2N540121PNP视频放大160V0.8050三极管引脚图6A0.625W100MHZ2N5551 2N555121NPN视频放大160V0.6A0.625W100MHZ2N5401 2N568512NPN音频功放开关60V50A300W 2N627712NPN功放开关180V50A250W 901221PNP低频放大50V0.5A0.625W9013 2N667812NPN音频功放开关650V15A175W15MHZ 9012贴片PNP低频放大50V0.5A0.625W9013 3DA87A6NPN视频放大100V0.1A1W 3DG6B6NPN通用20V0.02A0.1W150MHZ 3DG6C6NPN通用25V0.02A0.1W250MHZ 3DG6D6NPN通用30V0.02A0.1W150MHZ MPSA4221ENPN电话视频放大300V0.5A0.625WMPSA92 MPSA9221EPNP电话视频放大300V0.5A0.625WMPSA42 MPS2222A21NPN高频放大75V0.6A0.625W300MHZ