整流器技术规格书样本

整流模块一、技术要求1.负载效应：不同负载情况下的直流输出电压与输出电压整定值的差值应不超过输出电压整定值的±0.5％。

要求提供负载效应数据。

2.源效应：不同交流输入电压情况下的直流输出电压与输出电压整定值的差值应不超过输出电压整定值的±0.1%。

要求提供源效应数据。

3.温度系数：相对于20℃环境温度情况下，温度每变化1 ℃时的直流输出电压与输出电压整定值的差值应不超过输出电压整定值的±0.02%。

要求提供温度系数数据。

4.负载效应恢复时间（动态响应）：由于负载的阶跃变化（突变）引起的直流输出电压变化后的恢复时间应不大于200μs，其超调量应不超过输出电压整定值的±5 ％（注：恢复时间是指直流输出电压变化量上升至大于稳压精度处开始，恢复至小于等于并不再超过稳压精度处为止的这段时间）。

要求提供负载效应恢复时间数据。

5.开关机过冲幅度：由于开关机引起直流输出电压变化的最大峰值应不超过直流输出电压整定值的±10％。

要求提供开关机过冲幅度数据。

6.启动冲击电流：由于启动引起的输入冲击电流应不大于额定输入电压条件下最大稳态输入电流峰值的150%。

要求提供启动冲击电流数据。

7.软启动功能：整流模块应具有软启动功能，软启动时间（从启动至直流输出电压爬升到标称值所用的时间）可根据用户要求确定，一般为3s～10s。

8.请应答整流模块是否可热插拔。

9.请应答监控模块故障是否会影响整流模块已经设置的参数。

10.请提供各种模块功率密度（单位W/cm3）的具体数据。

11.建议整流模块的散热采用前进风后出风方式，请供应商具体说明整流模块的散热方式。

12.开关电源系统及整流模块在输出额定容量的情况下，输入电压允许变化范围应不低于：-20%～+25%。

请供应商应答是否满足，并提供具体数值。

13.整流模块效率a) 在负载率为100%情况下，整流模块效率应不低于90％。

请供应商应答是否满足，并提供具体数值。

KES-2×44KA/660V整流装置使用注意事项1．适用范围KES-2×44KA/660V整流装置为内蒙古大唐国际再生资源开发有限公司综合利用粉煤生产铝硅钛合金示范项目整流电源。

本装置共5套，每套包括:主整流柜2台稳流柜 1台控制柜1台外加总控柜1台。

2．正常使用环境条件2.1 海拔高度<1000m2.2 温度-45℃～+42℃2.3 湿度<85%3．主要参数和技术要求3.1变压器:功率71800KVA3.1.1一次进线电压 220KV 3相 50Hz3.1.2有载调压范围 40~105% ，3.1.3冷却方式强风油冷3.2 主整流柜：3.2.1电路结构：三相全控桥,同相逆并联。

3.2.2直流输出电压Ｕdn＝660V3.2.2输出直流电流 Idn＝44KA3.2.3直流输出调压范围 0~100%Ｕd3.2.4直流输出电流调节范围 0~100%Ｉd3.2.5直流电流调节精度电流调节精度高于±0.5%3.2.6晶闸管型号 KPC-3700A/3000V3.2.7整流臂均流系数＞0.923.2.8同臂元件均流系数＞0.903.2.9元件的电流安全裕量≦3.53.2.10元件电压安全裕量≦3.53.2.11母排电流密度≤1.23.2.12整流柜防护等级 IP423.2.13快熔 RSG-6 800V/3000A –PK23.2.14正常情况下，因网侧电压及电解槽负荷的波动而引起的电解系列电流波动应由晶闸管电路的移相控制来予以消除。

当晶闸管电路的控制角≤5º，≥25º时，采用人工控制调整有载开关升降档的方法，配合晶闸管电路的移相控制来消除上述波动。

快熔和晶闸管串联作直流侧短路保护。

并联于晶闸管两端的电阻和电容为晶闸管换相过电压吸收装置。

连接在阀侧输入铜排上，形成角形联结的压敏电阻和与之并联的电阻电容作整流变压器的浪涌电压吸收装置。

4.3控制柜4.3.1 电源电压 AC 三相380V 50Hz4.3.1 防护种类IP404.3.2 冷却方式自然冷却4.3.3 控制电路用一台控制柜监测和控制一套变压整流机组运行，对整流机组进行操作和给定，及对整流机组在运行中出现故障时做出相应的保护措施。

N-Channel Ultra Trench MOSFET 100V, 44A, 28m ΩFeatures•r DS(ON) = 24m Ω (T yp.), V GS = 10V , I D = 44A •Q g (tot) = 24nC (Typ.), V GS = 10V •Low Miller Charge •Low Qrr Body Diode•Optimized efficiency at high frequencies•UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82760Applications•DC/DC converters and Off-Line UPS •Distributed Power Architectures and VRMs •Primary Switch for 24V and 48V Systems •High Voltage Synchronous RectifierMOSFET Maximum Ratings T C = 25°C unless otherwise notedThermal CharacteristicsSymbol ParameterRatings Units V DSS Drain to Source Voltage 100V V GSGate to Source Voltage ±20VI DDrain Current44A Continuous (T C = 25o C, V GS = 10V)Continuous (T C = 100o C, V GS = 10V)31A Continuous (T amb = 25o C, V GS = 10V, R θJA = 52o C/W) 6.5A PulsedFigure 4A E AS Single Pulse Avalanche Energy (Note 1)120mJ P D Power dissipation 135W Derate above 25o C0.9W/o CT J , T STGOperating and Storage T emperature-55 to 175oCR θJC Thermal Resistance Junction to Case TO-252 1.11o C/W R θJA Thermal Resistance Junction to Ambient TO-252100o C/W R θJAThermal Resistance Junction to Ambient TO-252, 1in 2copper pad area52oC/WSGDTO-252AAGATE SOURCE(FLANGE)DRAINPackage Marking and Ordering InformationElectrical Characteristics T C = 25°C unless otherwise notedOff CharacteristicsOn CharacteristicsDynamic CharacteristicsResistive Switching Characteristics (V GS = 10V)Drain-Source Diode CharacteristicsNotes:1:Starting T J = 25°C, L = 0.6mH, I AS = 20A. 2:Pulse Width = 100sDevice MarkingDevice Package Reel Size Tape Width Quantity FDD3672FDD3672TO-252AA330mm16mm2500 unitsSymbolParameterTest ConditionsMinTypMaxUnitsB VDSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V 100--V I DSS Zero Gate Voltage Drain Current V DS = 80V --1µA V GS = 0V TC = 150o C--250I GSSGate to Source Leakage CurrentV GS = ±20V--±100nAV GS(TH)Gate to Source Threshold Voltage V GS = V DS , I D = 250µA 2-4Vr DS(ON)Drain to Source On ResistanceI D = 44A, V GS = 10V -0.0240.028ΩI D = 21A, V GS = 6V , -0.0310.047I D =44A, V GS =10V , T C=175o C-0.0540.068C ISS Input Capacitance V DS = 25V, V GS = 0V,f = 1MHz -1710-pF C OSS Output Capacitance-247-pF C RSS Reverse T ransfer Capacitance -62-pF Q g(TOT)Total Gate Charge at 10V V GS = 0V to 10V V DD = 50V I D = 44A I g = 1.0mA-2436nC Q g(TH)Threshold Gate Charge V GS = 0V to 2V-3 4.5nC Q gs Gate to Source Gate Charge -8.6-nC Q gs2Gate Charge Threshold to Plateau - 5.6-nC Q gdGate to Drain “Miller” Charge- 5.6-nCt ON Turn-On Time V DD = 50V , I D = 44AV GS = 10V, R GS = 11.0Ω--104ns t d(ON)Turn-On Delay Time -11-ns t r Rise Time-59-ns t d(OFF)Turn-Off Delay Time -26-ns t f Fall Time -44-ns t OFFTurn-Off Time--104nsV SD Source to Drain Diode Voltage I SD = 44A -- 1.25V I SD = 21A-- 1.0V t rr Reverse Recovery Time I SD = 44A, dI SD /dt =100A/µs --52ns Q RRReverse Recovery ChargeI SD = 44A, dI SD /dt =100A/µs--80nCTypical Characteristics T C = 25°C unless otherwise notedFigure 1. Normalized Power Dissipation vsAmbient TemperatureFigure 2. Maximum Continuous Drain Current vsCase TemperatureFigure 3. Normalized Maximum Transient Thermal ImpedanceFigure 4. Peak Current CapabilityT C , CASE TEMPERATURE (o C)P O W E R D I S S I P A T I O N M U L T I P L I E R002550751001750.20.40.60.81.01.212515001020304050255075100125150175I D , D R A I N C U R R E N T (A )T C , CASE TEMPERATURE (o C)V GS = 10V0.010.1110-410-310-210-1100101210-5t, RECTANGULAR PULSE DURATION (s)Z θJ C , N O R M A L I Z E D T H E R M A L I M P E D A N C ENOTES:DUTY FACTOR: D = t 1/t 2PEAK T J = P DM x Z θJC x R θJC + T CP DMt 1t 20.50.20.10.050.010.02DUTY CYCLE - DESCENDING ORDER SINGLE PULSE10010-510-410-310-210-110010150030I D M , P E A K C U R R E N T (A )t, PULSE WIDTH (s)TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGIONV GS = 10VT C = 25o CI = I 25175 - T C 150FOR TEMPERATURESABOVE 25o C DERA TE PEAK CURRENT AS FOLLOWS:NOTE:Refer to Fairchild Application Notes AN7514and AN7515Figure 5.Unclamped Inductive SwitchingCapabilityFigure 6. Transfer CharacteristicsFigure 7. Saturation CharacteristicsFigure 8. Drain to Source On Resistance vs DrainCurrentFigure 9. Normalized Drain to Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vsJunction TemperatureTypical Characteristics T C = 25°C unless otherwise noted1101000.0010.010.1130010I A S , A V A L A N C H E C U R R E N T (A )t AV , TIME IN AVALANCHE (ms)STARTING T J = 25o CSTARTING T J = 150o Ct AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )If R = 0If R ≠ 0t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]204060803.54.04.55.0 5.56.0 6.5I D , D R A I N C U R R E N T (A )V GS , GATE TO SOURCE VOLTAGE (V)PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V DD = 15VT J = 175o CT J = 25o CT J = -55o C204060800.51.0 1.52.0 2.53.0I D , D R A I N C U R R E N T (A )V DS , DRAIN TO SOURCE VOLTAGE (V)V GS = 6VPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAXV GS = 5VT C = 25oC V GS = 7V V GS = 10V1520253035401020304050I D , DRAIN CURRENT (A)V GS = 6VV GS = 10VD R A I N T O S O U R CE O N R E S I S T A N C E (m Ω)PULSE DURA TION = 80µs DUTY CYCLE = 0.5% MAX0.51.01.52.02.5-80-4004080120160200N O R M A L I Z E D D R A I N T O S O U R C E T J , JUNCTION TEMPERATURE (o C)O N R E S I S T A N C EV GS = 10V , I D = 44APULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX0.40.60.81.01.2-80-4004080120160200N O R M A L I Z E D G A T E T J , JUNCTION TEMPERATURE (o C)V GS = V DS , I D = 250µAT H R E S H O L D V O L T A G EThermal Resistance vs. Mounting Pad AreaThe maximum rated junction temperature, T JM , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, P DM , in an application. Therefore the application’s ambient temperature, T A (o C), and thermal resistance R θJA (o C/W)must be reviewed to ensure that T JM is never exceeded.Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.In using surface mount devices such as the TO-252package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of P DM is complex and influenced by many factors:1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board.2.The number of copper layers and the thickness of the board.3.The use of external heat sinks.4.The use of thermal vias.5.Air flow and board orientation.6.For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part,the board and the environment they are in.Fairchild provides thermal information to assist the designer’s preliminary application evaluation. Figure 20defines the R θJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve.Thermal resistances corresponding to other copper areas can be obtained from Figure 20 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.(EQ. 1)P DM T JM T A–()R θJA-----------------------------=Area in Inches Squared(EQ. 2)R θJA33.3223.840.268Area +()------------------------------------+=(EQ. 3)RθJA33.321541.73Area +()---------------------------------+=Area in Centimeters Squared2550751001250.010.1110Figure 20. Thermal Resistance vs MountingPad AreaR θJA = 33.32+ 23.84/(0.268+Area) EQ.2R θJ A (o C /W )AREA, TOP COPPER AREA in 2 (cm 2)R θJA = 33.32+ 154/(1.73+Area) EQ.3(0.645)(6.45)(64.5)(0.0645)PSPICE Electrical Model.SUBCKT FDD3672 2 1 3 ;rev May 2002CA 12 8 5.8e-10Cb 15 14 6.8e-10Cin 6 8 1.6e-9Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 105Eds 14 8 5 8 1Egs 13 8 6 8 1Esg 6 10 6 8 1Evthres 6 21 19 8 1Evtemp 20 6 18 22 1It 8 17 1Lgate 1 9 9.56e-9Ldrain 2 5 1.0e-9Lsource 3 7 4.45e-9RLgate 1 9 95.6RLdrain 2 5 10RLsource 3 7 44.5Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMODMweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1Rdrain 50 16 RdrainMOD 6.0e-3Rgate 9 20 1.5RSLC1 5 51 RSLCMOD 1.0e-6RSLC2 5 50 1.0e3Rsource 8 7 RsourceMOD 9.5e-3Rvthres 22 8 RvthresMOD 1Rvtemp 18 19 RvtempMOD 1S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))}.MODEL DbodyMOD D (IS=1.0E-11 N=1.05 RS=3.7e-3 TRS1=2.5e-3 TRS2=1.0e-6+CJO=1.2e-9 M=0.58 TT=3.75e-8 XTI=4.0).MODEL DbreakMOD D (RS=15 TRS1=4.0e-3 TRS2=-5.0e-6).MODEL DplcapMOD D (CJO=3.8e-10 IS=1.0e-30 N=10 M=0.60).MODEL MmedMOD NMOS (VTO=3.6 KP=3 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=1.5).MODEL MstroMOD NMOS (VTO=4.3 KP=59 IS=1e-30 N=10 TOX=1 L=1u W=1u).MODEL MweakMOD NMOS (VTO=3.09 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15 RS=0.1) .MODEL RbreakMOD RES (TC1=9.0e-4 TC2=-1.0e-7).MODEL RdrainMOD RES (TC1=11.0e-3 TC2=5.0e-5).MODEL RSLCMOD RES (TC1=3.0e-3 TC2=1.0e-6).MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6).MODEL RvthresMOD RES (TC1=-3.5e-3 TC2=-1.5e-5).MODEL RvtempMOD RES (TC1=-4.3e-3 TC2=1.5e-6).MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-3.5).MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-5.0).MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3).MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5).ENDSNote: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.1822+-68+-551+-198+-171868+-58+-RBREAKRVTEMP VBAT RVTHRESIT17181922121315S1AS1BS2A S2BCACB EGSEDS1481381413MWEAKEBREAK DBODYRSOURCESOURCE1173LSOURCERLSOURCECINRDRAINEVTHRES 16218MMEDMSTRODRAIN 2LDRAINRLDRAINDBREAKDPLCAP ESLC RSLC11055150RSLC21GATE RGA TE EVTEMP9ESGLGATERLGATE20+-+-6SABER Electrical ModelREV May 2002template FDD3672 n2,n1,n3electrical n2,n1,n3{var i iscldp..model dbodymod = (isl=1.0e-11,nl=1.05,rs=3.7e-3,trs1=2.5e-3,trs2=1.0e-6,cjo=1.2e-9,m=0.58,tt=3.75e-8,xti=4.0)dp..model dbreakmod = (rs=15,trs1=4.0e-3,trs2=-5.0e-6)dp..model dplcapmod = (cjo=3.8e-10,isl=10.0e-30,nl=10,m=0.60)m..model mmedmod = (type=_n,vto=3.6,kp=3,is=1e-40, tox=1)m..model mstrongmod = (type=_n,vto=4.3,kp=59,is=1e-30, tox=1)m..model mweakmod = (type=_n,vto=3.09,kp=0.05,is=1e-30, tox=1,rs=0.1)sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5.0,voff=-3.5)sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-5.0)sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.3)sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.5)c.ca n12 n8 = 5.8e-10c.cb n15 n14 = 6.8e-10c.cin n6 n8 = 1.6e-9dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmodspe.ebreak n11 n7 n17 n18 = 105spe.eds n14 n8 n5 n8 = 1spe.egs n13 n8 n6 n8 = 1spe.esg n6 n10 n6 n8 = 1spe.evthres n6 n21 n19 n8 = 1spe.evtemp n20 n6 n18 n22 = 1i.it n8 n17 = 1l.lgate n1 n9 = 95.6e-9l.ldrain n2 n5 = 1.0e-9l.lsource n3 n7 = 4.45e-9res.rlgate n1 n9 = 9.56res.rldrain n2 n5 = 10res.rlsource n3 n7 = 44.5m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1=9.0e-4,tc2=-1.0e-7res.rdrain n50 n16 = 6.0e-3, tc1=11.0e-3,tc2=5.0e-5res.rgate n9 n20 = 1.5res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=1.0e-6res.rslc2 n5 n50 = 1.0e3res.rsource n8 n7 = 9.5e-3, tc1=4.0e-3,tc2=1.0e-6res.rvthres n22 n8 = 1, tc1=-3.5e-3,tc2=-1.5e-5res.rvtemp n18 n19 = 1, tc1=-4.3e-3,tc2=1.5e-6sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmodv.vbat n22 n19 = dc=1equations {i (n51->n50) +=iscliscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/98))** 3))}1822+-68+-198+-171868+-58+-RBREAKRVTEMPVBAT RVTHRESIT17181922121315S1A S1BS2A S2BCACB EGSEDS1481381413MWEAKEBREAKDBODYRSOURCESOURCE1173LSOURCE RLSOURCE CINRDRAINEVTHRES 16218MMEDMSTRO DRAIN 2LDRAIN RLDRAIN DBREAKDPLCAP ISCL RSLC11055150RSLC21GATERGA TE EVTEMP9ESGLGATERLGATE20+-+-6SPICE Thermal ModelREV May 2002FDD3672CTHERM1 TH 6 3.2e-3CTHERM2 6 5 3.3e-3CTHERM3 5 4 3.4e-3CTHERM4 4 3 3.5e-3CTHERM5 3 2 6.4e-3CTHERM6 2 TL 1.9e-2RTHERM1 TH 6 5.5e-4RTHERM2 6 5 5.0e-3RTHERM3 5 4 4.5e-2RTHERM4 4 3 10.5e-2RTHERM5 3 2 3.4e-1RTHERM6 2 TL 3.5e-1SABER Thermal ModelSABER thermal model FDD3672template thermal_model th tl thermal_c th, tl {cctherm.ctherm1 th 6 =3.2e-3ctherm.ctherm2 6 5 =3.3e-3ctherm.ctherm3 5 4 =3.4e-3ctherm.ctherm4 4 3 =3.5e-3ctherm.ctherm5 3 2 =6.4e-3ctherm.ctherm6 2 tl =1.9e-2rtherm.rtherm1 th 6 =5.5e-4rtherm.rtherm2 6 5 =5.0e-3rtherm.rtherm3 5 4 =4.5e-2rtherm.rtherm4 4 3 =10.5e-2rtherm.rtherm5 3 2 =3.4e-1rtherm.rtherm6 2 tl =3.5e-1}RTHERM4RTHERM6RTHERM5RTHERM3RTHERM2RTHERM1CTHERM4CTHERM6CTHERM5CTHERM3CTHERM2CTHERM1tl 23456th JUNCTIONCASE。

附件1 技术规范1 总则1.1 本规范书适用于大同煤矿集团塔山2×660MW坑口电厂二期扩建工程空冷系统的整流型干式变压器。

它包括采购的整流型干式变压器及辅助设备的功能设计、结构、性能、安装、试验和检修等方面的技术要求。

设备需求表3150/1575-1575kVA，D,y11,d010.52 2.5%/0.4/0.4kV1.2 本规范书提出的是最低限度的技术要求，并未对一切技术细节作出规定，也未充分引述有关标准和规范的条文，卖方应保证提供符合本规范书和有关工业标准，并且功能完整、性能优良的优质产品及其相应服务。

同时必须满足国家有关安全、环保等强制性标准和规范的要求。

1.3 如果卖方没有以书面形式对本规范书的条文提出异议，则意味着卖方提出的产品完全符合本规范书的要求。

1.4 合同签订后1个月内，按本协议附件3、5的要求，卖方提出合同设备的设计、制造、检验、装配、安装、调试、试运、验收、试验、运行和维护等标准清单给买方，供买方确认。

1.5 设备采用的专利涉及到的全部费用均被认为已包含在设备报价中，卖方应保证买方不承担有关设备专利的一切责任。

1.6 卖方应提供高质量的设备。

这些设备应是技术先进并经过两台同类型机组三年以上成功运行实践证明是成熟可靠的产品。

1.7 卖方在设备设计和制造中所涉及的各项规程，规范和标准必须遵循现行最新版本的中国国家标准。

卖方应提供所使用的标准。

本技术规范书所使用的标准如与卖方所执行的标准发生矛盾时，按较高标准执行。

1.8 在签定合同之后，买方有权提出因规范、标准或规程发生变化而产生的一些补充要求，具体项目由供、需双方共同商定。

1.9 本技术规范书经供、需双方确认后作为合同的技术附件，与合同正文具有同等法律效力。

1.10本工程采用KKS标识系统。

卖方提供的技术资料(包括图纸)和设备标识必须有KKS编码。

具体标识要求由设计院提出，在设计联络会上讨论确定。

1.11 本技术规范书未尽事宜，由供、需双方协商确定。

轨道交通公交配套工程整流器技术规格书1. 概述1.1工程概况9号线三期南延伸（松江老城区公交配套）工程范围为9号线一期工程松江新城站（不含）至松江南站，线路全长5.372km，新建3座地下车站，分别是松江体育中心站、松江站、松江南站站。

供电系统采用集中式、110/35kV两级电压供电方式。

牵引供电系统采用DC1500V架空接触网供电、走行钢轨回流方式。

一期工程110/35kV佘山主变电所已考虑了南延伸工程的供电系统容量。

经供电验算，其中压供电网络电压水平满足相关规范要求。

因此，9号线三期工程南延伸段不新建主变电所，即利用佘山主变电所向本工程范围内的用电负荷供电。

松江新城站（一期工程）变电所预留了向三期工程南延伸段变电所供电的35kV馈线间隔（场地预留）。

根据三期工程南延伸线路长度和车站分布情况，松江站和松江南站站各设置1座牵引降压混合变电所，松江体育中心站设置1座降压变电所。

接触网地下区段采用刚性悬挂方式，接触网的结构设计满足正线列车最高运行速度80km/h的要求。

1.2环境条件环境温度：－10℃~+40℃相对湿度：月平均值不大于90%日平均值不大于95%饱和蒸气压：日平均值不大于2.25x10-3Mpa月平均值不大于1.85x10-3Mpa有凝露海拔高度：≤1000m地震裂度：≤7度1.3适用范围上海市轨道交通松江老城区公交配套工程正线牵引变电所。

2. 采用标准整流器及其零部件应满足下列标准GB10411 《地铁直流牵引供电系统》GB3859 《半导体变流器》GB4939 《普通整流管》IEC600028 《铜电阻》GB/T13926 《工业过程测量和控制装置的电磁兼容性》GB10236 《半导体电力变流器与电网互相干扰及其防护方法导则》GB13422 《半导体电力变流器电气试验方法》IEC60255 《电气保护继电器》供货商若采用其它被承认的但没有列在前面的相关国内、国际标准，应明确提出，并提供相应标准，经业主认可后方可采用。

June 2017 DocID15521 Rev 3 1/15This is information on a product in full production.STPS20M100SPower Schottky rectifierDatasheet - production dataFeatures∙ Low forward voltage drop meaning very small conduction losses ∙Avalanche rated∙ High frequency operation ∙ High current capability ∙ Insulated package:- Insulating voltage = 2000 V RMS sine ∙ECOPACK ®2 compliant component for D²PAK on demandDescriptionThis single Schottky rectifier is suited for high frequency switch mode power supply.Packaged in TO-220AB, TO-220FPAB, D²PAK and I²PAK, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.Figure 1: Electrical characteristicsV ARM and I ARM must respect the reverse safe operating area defined in Figure 11. V AR and I AR are pulse measurements (t p < 1 μs). V R , I R , V RRM and V F , are static characteristics.Characteristics STPS20M100S1 CharacteristicsTable 2: Absolute ratings (limiting values with terminals 1 and 3 short circuited, at 25 °CNotes:(1)For pulse time duration deratings, refer to Figure 4 . More details regarding the avalanche energymeasurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.(2)Refer to Figure 11(3)(dP tot/dT j) < (1/R th(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.STPS20M100S CharacteristicsNotes:(1)Pulse test: t p= 5 ms, δ < 2%(2)Pulse test: t p= 380 µs, δ < 2%To evaluate the conduction losses, use the following equation:P = 0.425 x I F(AV) + 0.0088 x I F2(RMS)Characteristics STPS20M100S 1.1 Characteristics (curves)Package information STPS20M100S2 Package informationIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: .ECOPACK® is an ST trademark.∙Cooling method: by conduction (C)∙Epoxy meets UL 94,V0∙Recommended torque value: 0.55 N·m (for TO-220AB and TO-220FPAB)∙Maximum torque value: 0.7 N·m (for TO-220AB and TO-220FPAB)2.1 TO-220AB package informationSTPS20M100S Package informationPackage information STPS20M100S 2.2 TO-220FPAB package informationSTPS20M100S Package informationPackage information STPS20M100S 2.3 I²PAK package informationSTPS20M100SPackage information2.4 D²PAK package informationThis package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.Package information STPS20M100SSTPS20M100S Package informationFigure 16: D²PAK recommended footprint (dimensions in mm)Ordering information STPS20M100S 3 Ordering information4 Revision historySTPS20M100SIMPORTANT NOTICE – PLEASE READ CAREFULLYSTMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or der acknowledgement.Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.No license, express or implied, to any intellectual property right is granted by ST herein.Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.Information in this document supersedes and replaces information previously supplied in any prior versions of this document.© 2017 STMicroelectronics – All rights reserved。

内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程35KV有载调压整流变压器技术规格书项目指挥部6月1 总则1.1 本规格书为内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程电解线整流变压器, 并提出该整流变压器本体及附属设备的设计、制造、结构、性能、装配、安装、试验、调试、试运、验收、培训、运行、维护和服务等各方面的技术要求。

本项目购买三台ZHSFPT-17600/35KV有载调压整流变压器, 品质必须等同于或优于国内外知名品牌的变压器产品。

1.2 本规格书提出的是最低限度的技术要求, 并未规定所有的技术要求和应用的标准, 未对一切技术细节作出规定, 也未充分引述有关标准和规格的条文, 供方应提供符合现行有关标准要求和满足本规格书的高质量、高效率、节能效果突出的优质产品。

1.3 如果供方没有以书面形式对本规格书的条文提出异议, 则意味着供方提供的设备完全符合本规格书的要求。

如有异议, 不论是多么微小, 都应在应标书中以”对规格书的意见和同规格书的差异”为标题的专门章节中加以详细描述。

1.4 本规格书所使用的标准如遇与供方所执行的标准不一致时, 按较高标准执行。

1.5 本规格书经供、需双方确认后作为订货合同的技术附件, 与合同正文具有同等的法律效力。

1.6 本规格书未尽事宜, 由供、需双方协商确定。

2 技术要求2.l 应遵循的主要现行标准2.2 环境条件2.2.1 周围空气温度最高温度: 40℃( 户外)最低温度: -31.5℃( 户外)日平均温度: 10.3℃年平均相对湿度: 43%2.2.2 海拔高度: 1256.1 m2.2.3 最大风速: 33 m/s2.2.4 地震烈度: 8 度 (中国12级度标准)2.2.5 污秽等级: IV级2.2.6 覆冰厚度: 18mm ( 风速不大于15m/s时)2.3 工程条件2.3.1内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程的有载调压整流变压器, 接线方式上进下出。

内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程35KV有载调压整流变压器技术规格书项目指挥部6月1 总则1.1 本规格书为内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程电解线整流变压器, 并提出该整流变压器本体及附属设备的设计、制造、结构、性能、装配、安装、试验、调试、试运、验收、培训、运行、维护和服务等各方面的技术要求。

本项目购买三台ZHSFPT-17600/35KV有载调压整流变压器, 品质必须等同于或优于国内外知名品牌的变压器产品。

1.2 本规格书提出的是最低限度的技术要求, 并未规定所有的技术要求和应用的标准, 未对一切技术细节作出规定, 也未充分引述有关标准和规格的条文, 供方应提供符合现行有关标准要求和满足本规格书的高质量、高效率、节能效果突出的优质产品。

1.3 如果供方没有以书面形式对本规格书的条文提出异议, 则意味着供方提供的设备完全符合本规格书的要求。

如有异议, 不论是多么微小, 都应在应标书中以”对规格书的意见和同规格书的差异”为标题的专门章节中加以详细描述。

1.4 本规格书所使用的标准如遇与供方所执行的标准不一致时, 按较高标准执行。

1.5 本规格书经供、需双方确认后作为订货合同的技术附件, 与合同正文具有同等的法律效力。

1.6 本规格书未尽事宜, 由供、需双方协商确定。

2 技术要求2.l 应遵循的主要现行标准2.2 环境条件2.2.1 周围空气温度最高温度: 40℃( 户外)最低温度: -31.5℃( 户外)日平均温度: 10.3℃年平均相对湿度: 43%2.2.2 海拔高度: 1256.1 m2.2.3 最大风速: 33 m/s2.2.4 地震烈度: 8 度 (中国12级度标准)2.2.5 污秽等级: IV级2.2.6 覆冰厚度: 18mm ( 风速不大于15m/s时)2.3 工程条件2.3.1内蒙古兰太实业股份有限公司2万吨/年工业金属钠、 3.1万吨/年液氯项目扩建工程的有载调压整流变压器, 接线方式上进下出。