1000W数字功放

JDS-1000WD电声警报器JDS-2000WD使用说明书石家庄开发区高达科技开发有限公司目录1.JDS系列电声警报器产品简介： (2)2.功能特点 (2)3.警报器的安装与使用 (2)3.1.警报器的安装 (2)3.2.警报器的使用 (3)4.警报器前面板按键功能及操作 (4)4.1.电源开关、键盘锁、监听、警报、语音及充电按键的使用 (4)4.2.液晶各功能菜单的操作 (5)5.警报器的输入输出接口 (7)5.1.卧式机型 (7)5.2.壁挂机型 (7)6.技术指标 (8)6.1.JDS-1000WD型技术指标 (8)6.2.JDS-2000WD型技术指标 (9)1.JDS系列电声警报器产品简介：JDS-系列电声警报器分为1000W和2000W两种类型，型号分别为JDS-1000WD和JDS-2000WD。

并具有4U卧式和壁挂式两种外形供用户选择。

该系列警报器采用全数字化结构：电源采用开关电源，核心控制单元采用高速、高性能单片机，功放为大功率D类数字功放，采用大屏幕液晶显示以及数字遥控接口。

该警报器具有功能强大、结构简单、工作可靠、兼容性好、外观优美等优点。

2.功能特点l采用模块化设计，结构简单，工作可靠，维护方便。

l有卧式和壁挂式外形，适合各种场合。

l采用开关电源，效率高，重量轻，电源适应范围宽。

l采用D类数字功放，最大输出功率达2000W，功放效率达90%以上。

l警音采用单片机软件编程产生，音质纯净、信噪比高，警音频率和变调周期稳定。

l数控音量调节，避免了音量电位器接触不良造成的故障。

l警音自动优先控制，各种音源智能切换，遥控警报时音量自动调节至最大，遥控警报稳定可靠。

l具有自检功能，可对电源状态、电池状态，音源状态、功放状态、扬声器状态进行全面检测，并可将检测情况通过有线/无线发回中心站，方便远程遥测。

l扬声器检测不扰民，可经常性对警报器检测，确保警报器状态良好。

l可独立发放各种警报、录音，并可作为扩音机使用。

目录目录 (i)摘要 (iii)Abstract (iv)1数字集成功率放大器设计概述 (1)2数字集成功率放大器整体电路设计 (2)2. 1输入切换部份的设计 (2)2.1.1 TC9152P组成电路图 (2)2.1.2TC9152P应用电路说明 (3)2.1.3TC9152P要紧元件参数说明 (4)数字音量操纵部份设计 (4)2.2.1TC9153组成电路图 (4)2.2.2TC9153应用电路说明 (5)2.2.3 TC9153要紧元件参数说明 (5)2.2.4 TC9153组成电路的屏蔽 (5)功率放大器部份设计 (5)2.3.1 TDA7481的特点 (6)2.3.2 TDA7481的引脚及参数说明 (7)2.3.3 TDA7481的外围电路 (8)2.3.4TDA7481的相关计算 (8)电源部份电路设计 (9)3设计总电路图 (12)4结论 (13)参考文献 (14)致谢 (15)附录 (15)摘要本设计采纳TDA7481芯片组成的数字集成功率放大器，加入了音源选择电路，该选择器能够在TUNER、TAPE、CD、AUX一、AUX2之间任意切换，大大方便了整机的适用性。

另外在音量操纵部份已改传统电位器操纵的做法，选用了数字轻触式按键操纵，如此能够方便操作和延长寿命。

由于选用D类功率放大器，其输出功率大、效率较高、失真较小，使整机具有了很多良好的性能。

关键词：TDA7481；效率；D类功率放大器AbstractThis design used the TDA7481 chip composing the digital integration power amplifier, joined the sound source selecting circuit which contain TUNER, TAPE, CD, AUX1 and AUX2,and then it greatly improved the applicability of the equipment. Another, at the part of volume controlling, in order to simplify the operation and last its life, the traditional potentiometer controlling was changed into digital button-click controlling. Because of the Class-D amplifier assembled, and its high power of output, high efficiency, and small distortion, the whole equipment has many good performances.Key words: TDA7481;efficiency;Class-D amplifier asembled1数字集成功率放大器设计概述该集成功率放大器是集成了数字音量操纵（TC9153），音源选择（TC9152P）的D 类功率放大器，功率放大部份选用TDA7481。

LA4功率放大控制器2.0版本1 安全警告适用于L-ACOUSTICS LA4功率放大控制器的所有详细的信息，在此部分都以“此产品”代替。

1.1 符号说明1.1.1 手册使用的符号本手册中潜在的危险用以下的符号表示：闪电符号表明遭受电击会有生命危险。

此外，产品也会受到严重的破坏。

电压警告符号表明太靠近产品可能会对用户或他人产生危险。

此外，产品也可能受损。

小心符号旨在提醒用户相关的信息以防产品可能发生损坏。

重要符号表示的是关于产品使用的重要建议。

1.1.2 产品上的符号由于产品是电子设备，使用者会有潜在的危险。

因此用户必须十分注意标示在产品盖子的符号:靠近NL4FC Speakon ®连接头插座的闪电符号表示产品会产生很高的输出电压，用户有潜在的生命危险。

本产品和音箱的连接需要用一个现成的导线。

当功放正在操作时，切勿在没有拔掉本 产品的连接头的情况下触摸任何音箱的明线。

1.2 重要安全指示1. 阅读本用户手册2. 留意所有的安全警告3. 遵循所有的指示4. 用户切勿使用没有得到L-ACOUSTICS®认可的设备或者配件5. 环境只能在符合EN55103-2标准的E1,E2,E3,E4环境下使用本产品。

电压电压电压6. 无线电干扰本产品的样机已经经过测试并符合EMC指示的限制规定。

这些限制意在对产品提供合理的保护，使产品免受电气设备产生的有害干扰。

尽管如此，在特定安装的情况下，干扰还是有可能发生的。

7. 电源线保护电源线损坏或发生磨损时，切勿使用本产品。

电源线必须妥当安置，避免受到踩踏或重物压下，尤其是插头和从功放拉线出来的位置。

8. 交流电源在120/230V，50-60Hz的交流电下使用本产品。

日本为100V，50-60Hz。

9. 接地本产品只能通过使用交流电的接地插座连接，切勿损坏插座的接地脚。

如果当地的插座老旧，请联系合格的电工进行维修。

本产品适合使用接地插头；切勿损坏连接母插头到本产品底盘的接地线。

专业音响中术语解释超低音音箱（Subwoofer）指用于重放那些深沉的而由普通小型音箱所无法予以重放出来的低频段的特制音箱。

唱臂（Tonearm）为唱机的一部分，其上装有唱头。

瞬态（Transient）指乐曲（特别是打击乐）中那些短暂而有爆发性的声音，通常，这些声音是难于准确重放出来的。

三线分音（推动）（Triamping/Triwiring）指与双线分音（biwiring）及双功放推动（biamping）相类似的一种功放与音箱的连接方式，不过此时需使用三对喇叭线/或三台功放，而且仅适用于三分频并带相应输入端子的音箱。

抖晃（Wow）指录音机或录音座转速的缓慢变化所导致产生的不稳定的畸形声音。

AAD指录音及后期制作皆为模拟（A）方式，而只有制片使用数字（D）方式的CD唱片制作。

A/B试听比较（A/B comparison）指对两种不同的音乐重放方式进行的反复试听比较。

绝对极性（absolute polarity）在用绝对极性正确的音响系统播放绝对极性正确的录音制品时，音箱所产生的正向声压便会和原始声音的正向声压一致。

绝对极性不对时，便会有180°的相位差。

对于有些乐器，有些人是能听出绝对极性的正确与否的。

电源净化器（AC line-conditioner）指专门用来滤去交流供电电源中的噪声和防止音响器材受到电压峰值和浪涌损害的一种音响辅助器材。

有些电源净化器甚至还可用来防止闪电的损伤。

其实，电源净化器便是一种特别设计和制作的滤波器。

吸声材料（acoustic absorbed）指任何一种能够吸收声波的材料，比如地毯、窗帘以及盖以厚实布套的家俱等等。

声扩散器（acoustic diffuser）指任何能够扩散声波的材料或器件。

声反馈（acoustic feedback）音箱发出的声音会使LP唱盘、话筒等拾音设备产生振动，此振动又被变换为电信号，并再次由音箱重放出来。

在这种反馈过程中，振动因自身的反馈而会越来越加强。

HIGH POWER PROFESSIONAL DIGITAL AMPLIFIERSPKNC XE2500PKNC XE4000PKNC XE6000 Name Professional power amplifierPower requirements160V – 270 VAC, (50-60Hz)Max. power consuption2600W 5500W 7900W Soft starting yesPower supply High frequency resonant includes active PFCMains connection NEUTRIK POWERCONWorking temperature range 0 - 40CStorage temperature range -25C - 60COutput power @ 8 Ohms 700W + 700W 1300W + 1300W 1900W + 1900W Output power @ 4 Ohms 1300W + 1300W 2100W + 2100W 3650W + 3650W Minimum load impedance 2 OhmFrequency ( +/- 3dB , 8Ohm ) 5Hz - 20KHzSlew rate 50V / us 60V / us Damping factor 400 500 600 End stages High frequency semi soft switched PWM in balanced configuration Output connections Four pole NEUTRIK SPEAKON (1+2+ in parallel,1-2- in parallel) Signal to Noise ratio A-Weighted 20Hz-20KHz 100 dB 102 dB 107 dB Nominal sensitivity for maximum output level (balanced) 1.4V (rms) 1.7V (rms) 1.7V (rms) Input impedance (referred to ground) 10KOhm +10KOhm (+/- 1%)Input terminals NEUTRIK XLRBuilt in limiter Programmable limiterOutput level meter Ledbar, status ledsDisplay Graphics LCDControl terminals JOGs, buttonsVolume control Set by control jog wheels or remote -95,5dB – 0dB (in 0.5dB steps) Input sensitivity -95.5dB – 0 dB (steps 0.5 dB)Limiter settings range 10 - 100 V10 - 155 V10 - 170 V User profiles 5 user profileProtections Short circuit,Overload,low impedance,thermal,DC fault Cooling Forced air cooling with regulated DC fans Direction of air flow Front to rearRemote control 10/100 Mps ETHERNETWeight 8 Kg 9 Kg 9.5 Kg External dimensions 19” rack 483mm * 440mm * 44mm (1RU)PKNC XD2500PKNC XE4000PKNC XE6000 Name Professional power amplifierPower requirements 160V – 270 VAC, (50-60Hz)Max. power consuption 2600W 5500W 7900W Soft starting yesPower supply High frequency resonant includes active PFCMains connection NEUTRIK POWERCONWorking temperature range 0 - 40CStorage temperature range -25C - 60COutput power @ 8 Ohms 700W + 700W 1300W + 1300W 1900W + 1900W Output power @ 4 Ohms 1300W + 1300W 2100W + 2100W 3650W + 3650W Minimum load impedance 2 OhmFrequency ( +/- 3dB , 8Ohm ) 5Hz - 20KHzSlew rate 50V / us 60V / us Damping factor 400 500 600 End stages High frequency semi soft switched PWM in balanced configuration Output connections Four pole NEUTRIK SPEAKON (1+2+ in parallel,1-2- in parallel) Signal to Noise ratio A-Weighted 20Hz-20KHz 100 dB 102 dB 107 dB Nominal sensitivity for maximum output level (balanced) 1.4V (rms) 1.7V (rms) 1.7V (rms) Input impedance (referred to ground) 10KOhm +10KOhm (+/- 1%)Input terminals NEUTRIK XLRBuilt in limiter yesOutput level meter Ledbar, status ledsControl terminals Two knobsInput sensitivity -95.5dB – 0 dB (steps 0.5 dB)User profiles 5 user profileProtections Short circuit,Overload,low impedance,thermal,DC fault Cooling Forced air cooling with regulated DC fans Direction of air flow Front to rearRemote control -Weight 8 Kg 9 Kg 9.5 Kg External dimensions 19” rack 483mm * 440mm * 44mm (1RU)PKNC LC2002PKNC LC4004 Name Professional power amplifierPower requirements 160V – 270 VAC, (50-60Hz)Max. power consuption 12 A 20 ASoft starting yesPower supply High frequency resonant includes active PFCMains connection NEUTRIK POWERCONWorking temperature range 0 - 40CStorage temperature range -25C - 60COutput power @ 8 Ohm 2 x 500W 4 x 500W Output power @ 4 Ohm 2 x 1000W 4 x 1000W Minimum load impedance 2 OhmFrequency ( +/- 3dB , 8Ohm ) 5Hz - 22KHzSlew rate 50V / usDamping factor 400 500End stages High frequency semi soft switched PWM in balanced configuration Output connections Four pole NEUTRIK SPEAKON (1+2+ in paralell, 1-2- in paralell) Signal to Noise ratio A-Weighted 20Hz-20KHz 104 dB 104 dB Nominal sensitivity for maximum output level (balanced) 700mV (rms) 700mV (rms)Input impedance (referred to ground) 10KOhm +10KOhm (+/- 1%)Input terminals NEUTRIK XLRBuilt in limiter yesCrossover 100 Hz Hi-pass filter, 120 Hz Lo-pass filter, 160 Hz Lo-pass filter Output level meter status LEDsProtections Short circuit, Overload, low impedance, thermal, DC fault Cooling Forced air cooling with regulated DC fans Direction of air flow Front to rearBridged configuration ability yesRemote control -Weight 6 Kg 8 Kg External dimensions 19” rack 483mm * 440mm * 44mm (1RU)PKN ControlsDISTRIBUTOR。

音响专业术语音响专业术语平衡（balance）：指在音频频谱的高段和低段之间在相对响度上所存在的客观关系；也指双声道立体声左声道和右声道之间的信号的相同（平衡）。

平衡连接（balanced connection）：指音响器材间的一种连接方式，在单根电缆中有3根导线，一根用来传送音频信号，另一根用于传送极性相反的音频信号，而另一根则为地线。

香蕉插座（banana jack）指装于音箱和功率放大器上用于和音箱线的香蕉插头连接的一种小型圆状插座。

香蕉插头（banana plug）：普遍装于音箱线两端的供插入香蕉插座的一种插头。

带宽（band width）:指音响装置能够处理或通过的一段频率范围。

比方说，杜比环绕声的环绕声道的带宽便是100Hz-7kHz。

环绕声道只通过频率在100Hz （低音）和7kHz（高音的低段）之间的频率。

人耳能听到的频率范围为20Hz-20kHz。

在谈到电气或声学器材的带宽时，往往指-3dB之间的频率范围。

低音（bass）:指在音频低段的声音，通常低于500Hz（另一说则指低于160Hz）。

低频延伸（bass extension):指音响器材所能重放的最低频率。

系用于测定在重放低音时音响系统或音箱所能下潜到什么程度的尺度。

比方说，小型超低音音箱的低频延伸可以到40Hz，而大型超低音音箱则下潜到16Hz。

低音管理（bass management）:指A/V功放接收机或A/V前置放大器中的综合控制电路，系用于确定应该给相应的音箱送去多少低频信号。

倒相式音箱（bass reflex）:也称倒相式开孔箱，系在音箱面板上开有倒相孔（槽）的一类音箱。

由于开有孔，箱内的声音便可以辐射到外面来。

倒相式音箱比密闭式音箱的低频延伸要好些，但低音往往不那么结实紧凑。

比较“无限障板”（infinite baffle）双路功放推动（bi-amping）:指用两台功率放大器去推动同一音箱的一种特殊连接方式，系用一台功率放大器去推动低音单元；另用一台功率放大器去推动中音和高音单元。

目录一、前言 ............................................................................................................................ 一-II二、设计范围..................................................................................................................... 二-II三、设计理念..................................................................................................................... 三-II1) 系统可靠性。

............................................................................................................. 三-II2) 音质优化性。

........................................................................................................... 三-III3) 操作简便性。

........................................................................................................... 三-III四、音响系统性能要求.................................................................................................... 四-III五、扩声系统分析........................................................................................................... 五-IV4) 设计依据................................................................................................................... 五-IV5) 设计指标..................................................................................................................... 五-V六、礼堂扩声系统........................................................................................................... 六-VI6) 扬声器及功放的分析选择...................................................................................... 六-VII七、礼堂扩声系统.......................................................................................................... 七-VII7) 中央声道扬声器及台唇补声音箱......................................................................... 七-VIII8) 左右声道扬声器....................................................................................................... 七-XI9) 舞台返送监听扬声器: ........................................................................................... 七-XIV八、礼堂控制系统........................................................................................................ 八-XVI10) 24路模拟调音台SoundCraft RW5768 .................................................... 八-XVII九、音源及拾音设备.................................................................................................... 九-XIX11) 蓝光DVD机PIONEER 4110 ................................................................... 九-XIX12) 无线手持咪（单咪单接收）beyerdynamic OPUS 669（4只） .................... 九-XX13) 无线头戴话筒（单咪单接收）beyerdynamic OPUS 654（2只） .................. 九-XX14) 无线领夹咪beyerdynamic OPUS 650（2只） ............................................... 九-XXI15) 专业鹅颈式会议话筒麦杆、底座auido-technica ES917aH（8 只） .......... 九-XXII十、礼堂周边设备...................................................................................................... 十-XXIII16) 八通道自动混音器auido-technica AT-MX381 ....................................... 十-XXIII17) 数字音频处理器RCF DX4008................................................................十-XXIV18) 双通道反馈抑制器FBX2810 ......................................................................十-XXVI19) 数码音频效果器LEXICON MX200 .................................................... 十-XXVIII20) 均衡器DBX 2231 ................................................................................. 十-XXVIII 十一、配置清单.......................................................................................................... 十一-XXIX艺术楼设计方案一、前言中学礼堂，面积约为1800平方米。

LOW COST 1000 WATT, 300 VOLT RF POWERAMPLIFIER FOR 13.56 MHzPresented at RF EXPO EAST 1995A P P L I C A T I O N N O TELow Cost 1000 Watt, 300 Volt RF Power Amplifier for13.56MHzKenneth Dierberger Lee B. MaxApplications Engineering Manager Independent ConsultantAdvanced Power Technology Inc.6284 Squiredell Dr.405 SW Columbia St.San Jose, California 95129 USABend, Oregon 97702 USABobby McDonaldUNI-WEST ENGINEERING6329 Bethel Island Rd.Bethel Island, CA 94511 USAABSTRACTThis paper details the design, development , assembly and performance of a low cost, high-efficiency, 1000Watt, 13.56MHz RF power amplifier (PA) operated from a 300VDC supply, with an efficiency of 80%. The PA is built around a “symmetric Pair” of low cost RF power MOSFETs from Advanced Power Technology (APT). The transistors are from a new generation of high quality, commercial, HF/ VHF, silicon, 900V RF power MOSFETs in TO-247 packages. The paper addresses both the theoretical design and physical construction of the amplifier. The paper also contains a technical description of the RF power transistors.INTRODUCTIONMost transistorized RF Power Amplifiers operate from a DC to DC converter. This supply is usually low voltage, about 50V, and requires a down regulator when operated from AC mains. This converter is a significant portion of the overall cost of the RF amplifier system.As a result of IEC555-2, all electronic equipment sold in Europe with a power draw of greater than 250W will require power factor correction (PFC). The addition of a PFC preregulator to the system could add 50 to 100% to the cost of the power supply portion. The requirement for PFC is soon to follow in the USA and the rest of the world.The use of a new high voltage RF MOSFETs from Advanced Power Technology (APT) makes possible a new RF amplifier design which can be operated at 300V, allowing for the direct use of regulated output, thus eliminating the DC to DC converter, reducing the cost of the RF amplifier system.The new devices, like their predecessors, utilize the high performance of APT’s Power MOS IV® technology and the “symmetric pair”package.AMPLIFIER DESCRIPTIONThe amplifier is a 1000 Watt, 13.56MHz design operating in class C with a 300VDC power supply. Efficiency of the amplifier is 80 percent. The power amplifier is built around two “symmetric pair” of ARF444/ARF445 900V RF power MOSFETs provided in TO-247 plastic packages. The devices are electrically identical, except that they are packaged in “mirror image”pairs to facilitate a symmetrical layout that helps maintain the electrical symmetry required for push-pull operation. Figure 1 shows the circuit diagram of the amplifier, with the parts list given in Table 1. The amplifier is a classical push-pull configuration of a straight forward nature, using a simple L-C network for impedance matching and transformer-coupling to achieve the required complementary gate drive signals. A wideband wire wound transformer output circuit is used, with a conventional bifilar-wound RF choke for DC power supply isolation.Short, low inductance interconnections are easily made using the ARF444/ARF445 devices, because they can be mounted symmetrically in a common source configuration. In particular, the gate circuit should minimize inductance to avoid instability and losses when that inductance is combined with the high capacitance of the gates. Similarly, the frequency response of the output circuitry is improved with minimum stray inductance due to interconnections[1].The amplifier is operated directly from the PFC 300VDC power supply, eliminating the DC-DC converter, and is constructed on a heat sink sized for proper dissipation at the expected power levels. Figure 2 shows the component placement on the PC board and heat sink. The common source design of the package allows the device mounting to be accomplished without an insulator thus allowing good heat transfer to the heat sink with the use of thermal grease.INPUT NETWORKThe input network provides a 50Ω impedance to the driver source and transformation of the MOSFET gate impedance, as well as balanced drive for push-pull operation. The input network comprises capacitor C1, the input capacitance of the power MOSFETs and the series gate resistors, both transformed by T1. The proper selection of C1 tunes the input network for minimum input return loss at maximum power output [2].Transformer T1 provides a 9:1 impedance transformation of the MOSFET input impedance. It is constructed using two Fair-Rite cores #2643540002, µ=850 with 3 turns of strandedFigure 1. Circuit Diagram of the 1000 Watt Class C AmplifierPart Number DescriptionR1,R210Ω 1WR3-R18 4.7Ω 1WC1200pF Chip CapacitorsC2-C50.1µF Chip CapacitorsC6-C100.1µF Disk CeramicC11, C120.01 Disk CeramicQ1, Q3ARF444Q2, Q4ARF445L1, L2VK200-19/4BL3, L40.37µH: 6T, #18AWG, ID=0.438RFC12T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shieldbead, µi=850T19:1(Z) conventional transformer; 3:1(T), #18 stranded PTFE coatedwire on two Fair-Rite #2643540002, µi=850T21:1(Z) conventional transformer; 2:2(T), #14 stranded PTFE coatedwire on two stacks of three Fair-Rite #2643102002 shielded bead, µi-850 BFC16T, #18 Twisted pair stranded PTFE coated wire on three stackedIndiana General Toroid #F624-19-Q1, µi=125Table 1. Parts List for the 1000 Watt Power AmplifierPTFE coated #18 wire on the primary and 1 turn of stranded PTFE coated #18 wire on the secondary. The secondary is coupled through the DC blocking capacitors C1-C2 and C3-C4 and resistors R3 through R18 to the gates of the MOSFETs. The resistor-inductor combination R1-L1 and R2-L2 stabilize the push-pull amplifier at lower frequency and provide the MOSFETs with a DC ground reference to insure the gates do not float to a DC potential thus unbalancing the amplifier bias points. The parallel resistors R3-R6, R7-R10, R11-R14 and R15-R18 in series with the gates of the MOSFET, prevent high frequency oscillation common when paralleling MOSFETs [3].OUTPUT CIRCUITThe 300VDC power input is delivered through a balanced feed choke [4]. The choke is designedto create a zero DC magnetic bias in the core when both transistors draw the same average current.With the devices operating 180 degrees out of phase, the construction of the windings presents a high impedance at 13.56MHz to the drain of each MOSFET. The choke is constructed by winding 6 turns of #18 stranded PTFE coated twisted pair around three stacked Indiana General Toroids #F624-19-Q1, µi=125.The output of the power devices is coupled to the output transformer T2 through two 0.37 µH inductors. The transformer is a wideband 1:1conventional transformer. No output filtering was used in the test amplifier, which has the third harmonic 30db down and the second harmonic 55db below the 1000 watt output power level.The transformer is constructed by winding 2turns of #14 stranded PTFE coated wire for the primary and 2 turns of #14 stranded PTFE coated wire for the secondary around two stacks of three Fair-Rite #2643102002 shield beads, µi=850.PERFORMANCE MEASUREMENTS The amplifier was operated under two conditions. First the amplifier was driven with a 13.56MHz RF signal, modulated by a 1kHz square wave, at a 50% duty cycle, up to a peak power out of 1200W. Second the amplifier was driven with a 13.56HMz CW RF signal up to a continuous power out of 1000W. Due to the close correlation of the modulated data and the CW data, it was concluded that there is significant thermal margin from using four 300W devices at 1000W CW. Figures 3 through 6 show the performance data for this amplifier. Figure 3 is a plot of P in versus P out and Figure 4 shows gain versus P out . The curves show the classical class C characteristics,with a low gain at low power output, improving as the output power increases. The gain peaks at 16.9db when the amplifier output is 800W, with a roll-off to 15.9db at 1200W.Efficiency versus P out is shown in Figure 5. As would be expected in class C, the efficiency is over 50% at power output above 300W. The efficiency rises to an outstanding 80.4% at 1000W,continuing upward to 84.4% at 1000W, continuing upward to 84.4% at 1200W output. Figure 6 is total amplifier power dissipation versus P out .Figure 3. Input Power versus Output PowerFigure 4. Gain versus Output PowerFigure 6. Total Amplifier Power Dissipation versus Output Power 300 VOLT POWER SUPPLYThe topology chosen for the 300 V olt PFC power supply is the commonly used continuous mode boost converter. This topology is the most popular where power requirements are greater than 750W. Figure 7 is a simplified schematic of the regulator which is implemented using an APT5012JNU2 and a Unitrode U3854 controller IC [5] [6] [7].The regulator operates by the controller sensing the rectified DC input and controlling the ON and OFF time of Q1 such that the current in L1 closely follows a sine wave which is in phase with the AC line voltage. During the OFF time of Q1, the inductor fly back transfers some of the stored energy in the inductor to the output storage capacitor. The controller senses the output voltage and adjusts the average current in the inductor such that the regulated voltage on the output capacitor is maintained at 300V.CONCLUSIONThis paper demonstrated a recent breakthrough in commercial solid state RF power device and circuit technology. The high quality, low cost, components and circuits described here, now make it possible to deliver solid state, 10,000 watt (or more), 13.56MHz power supplies costing less than an equivalent tube RF power supply.The combination of high voltage operation, high gain, and efficiency of 80 percent make this technology exciting just for performance alone. Combine that performance with component coststhat allow for multi-kilowatt, 13.56MHz amplifiers to be built at less than $0.25 per watt and you now have the first real breakthrough in commercial HF, RF power technology in over a decade.This is only the beginning. The commercial technology detailed in this paper will be evolving quickly into solid state devices and circuits for higher frequency, higher power, and even higher operating voltages.Figure 7. Simplified Circuit Diagram of the Power Factor Correction Power SupplyREFERENCES1.H.O. Granberg, "Good RF Construction Practices and Techniques," Motorola Application Note AR164, Motorola RF Device Data, V olume II, DL110 Rev 4.2.H.O. Granberg, "Broad Band Transformers and Power Combining Techniques for RF," Motorola Application Note AN749, Motorola RF Device Data, V olume II, DL110 Rev 4.3.Rudy Severns, et al, "Parallel Operation of Power MOSFETs" "Anomalous Oscillation and Turn-Off Behavior in a Vertical Power MOSFET," MOSPOWER Applications Handbook, Siliconix, Inc., 19844.William E. Sabin, Edgar O. Schoenike, et al, "Single Sideband Systems and Circuits," McGraw-Hill 19875.Phil Todd, "UC3854 Controlled Power Factor Correction Circuit Design", Unitrode Application Note U-134, Product and Applications Handbook 1993-946.Ken Dierberger, Denis Grafham, "Design ofa 3000 Watt Single MOSFET Power Factor Correction Circuit," APT Application Note APT9303.7.Ken Dierberger, Denis Grafham, "Customized ISOTOP® Module for High Power Boost Converters and Related Topologies," APT Application Note 9401.ISOTOP® is a registered trademark of SGS Thompson405 S.W. Columbia Street Bend, Oregon 97702 USA Phone: (503) 382-8028 Fax: (503) 388-0364Parc Cadera Nord - Av. Kennedy BAT B433700 Merignac, FrancePhone: 33-56 34 34 71Fax: 33-56 47 97 61Printed - August 1995。