数字电路_第三章答案

《数字电路与逻辑设计》作业教材：《数字电子技术基础》（高等教育出版社，第2版，2012年第7次印刷）第一章：自测题：一、1、小规模集成电路，中规模集成电路，大规模集成电路，超大规模集成电路5、各位权系数之和，1799、，，；，，二、1、×8、√10、×三、1、A4、B练习题：1.3、解：(1) 十六进制转二进制： 4 5 C0100 0101 1100二进制转八进制：010 001 011 1002 13 4十六进制转十进制：(45C)16=4*162+5*161+12*160=(1116)10所以：(45C)16=(10001011100)2=(2134)8=(1116)10(2) 十六进制转二进制： 6 D E . C 80110 1101 1110 . 1100 1000 二进制转八进制：011 011 011 110 . 110 010 0003 3 3 6 . 6 2十六进制转十进制：(6DE.C8)16=6*162+13*161+14*160+13*16-1+8*16-2=(1758.78125)10 所以：(6DE.C8)16=(0. 11001000)2=(3336.62)8=(1758.78125)10(3) 十六进制转二进制：8 F E . F D1000 1111 1110. 1111 1101二进制转八进制：100 011 111 110 . 111 111 0104 3 7 6 . 7 7 2十六进制转十进制：(8FE.FD)16=8*162+15*161+14*160+15*16-1+13*16-2=(2302.98828125)10 所以：(8FE.FD)16=(1.11111101)2=(437 6.772)8=(2302.98828125)10(4) 十六进制转二进制：7 9 E . F D0111 1001 1110 . 1111 1101二进制转八进制：011 110 011 110 . 111 111 0103 6 3 6 . 7 7 2十六进制转十进制：(79E.FD)16=7*162+9*161+14*160+15*16-1+13*16-2=(1950. )10 所以：(8FE.FD)16=0.11111101)2=(3636.772)8=(1950.98828125)101.5、解：(74)10 =(0111 0100)8421BCD=(1010 0111)余3BCD(45.36)10 =(0100 0101.0011 0110)8421BCD=(0111 1000.0110 1001 )余3BCD(136.45)10 =(0001 0011 0110.0100 0101)8421BCD=(0100 0110 1001.0111 1000 )余3BCD (374.51)10 =(0011 0111 0100.0101 0001)8421BCD=(0110 1010 0111.1000 0100)余3BCD1.8、解（1）(+35)=(0 100011)原= (0 100011)补（2）(+56 )=(0 111000)原= (0 111000)补（3）(-26)=(1 11010)原= (1 11101)补（4）(-67)=(1 1000011)原= (1 1000110)补。

第一章数字逻辑习题1．1 数字电路与数字信号1.1.2 图形代表的二进制数0101101001．1．4 一周期性数字波形如图题所示，试计算：（1）周期；（2）频率；（3）占空比例MSB LSB0 1 2 11 12 （ms）解：因为图题所示为周期性数字波，所以两个相邻的上升沿之间持续的时间为周期，T=10ms 频率为周期的倒数，f=1/T=1/0.01s=100HZ占空比为高电平脉冲宽度与周期的百分比，q=1ms/10ms*100%=10%1.2 数制1.2.2 将下列十进制数转换为二进制数，八进制数和十六进制数（要求转换误差不大于2−4（2）127 （4）2.718解：（2）（127）D= 27 -1=（10000000）B-1=（1111111）B=（177）O=（7F）H（4）（2.718）D=(10.1011)B=(2.54)O=(2.B)H1.4 二进制代码1.4.1 将下列十进制数转换为8421BCD 码：（1）43 （3）254.25 解：（43）D=（01000011）BCD1.4.3 试用十六进制写书下列字符繁荣ASCⅡ码的表示：P28（1）+ （2）@ （3）you (4)43解：首先查出每个字符所对应的二进制表示的ASCⅡ码，然后将二进制码转换为十六进制数表示。

（1）“+”的ASCⅡ码为0101011，则（00101011）B=（2B）H（2）@的ASCⅡ码为1000000,(01000000)B=(40)H(3)you 的ASCⅡ码为本1111001,1101111,1110101,对应的十六进制数分别为79,6F,75(4)43 的ASCⅡ码为0110100,0110011,对应的十六紧张数分别为34,331.6 逻辑函数及其表示方法1.6.1 在图题1. 6.1 中，已知输入信号A，B`的波形，画出各门电路输出L 的波形。

解: (a)为与非， (b)为同或非，即异或第二章逻辑代数习题解答2.1.1 用真值表证明下列恒等式(3)A⊕ =B AB AB+ （A⊕B）=AB+AB解：真值表如下由最右边2栏可知，A⊕B与AB+AB的真值表完全相同。

第三章门电路解：两种情况下的电压波形图如图A3.4所示。

【题3.7】试分析图3.7中各电路图的逻辑功能，写出输出的逻辑函数式。

（a ）图P3.7（a ）电路可划分为四个反相器电路和一个三输入端的与非门电路，如图所示。

从输入到输出逐级写出输出的逻辑函数式，'111'1'1'1)(,,,C B A D C C B B A A ''''111')(C B A C B A C B A D Y（b ）图P3.7（b ）电路可划分为五个反相器电路和一个或非门电路，如图所示。

从输入到输出逐级写出输出的逻辑函数式：'111''''()()YA B C A B C ABC（c ）图P3.7（c ）电路可划分为三个与非门电路、两个反相器电路和一个或非门电路，如图所示。

从输入到输出逐级写出输出的逻辑函数式：''')(,)(,)'(,)(G INHH EF G CD F AB E '''''()()'()'()()Y I H AB CD INH AB CD INH（d）图P3.7（d）电路可划分为两个反相器电路和两个传输门电路，如图所示。

从输入到输出逐级写出输出的逻辑函数式：'YBAAB'【题3.8】试画出图3-8（a）（b）两个电路的输出电压波形，输入电压波形如图（c）所示。

输出电压波形如右图所示：【题3.9】 在图3-21所示电路中，G 1和G 2是两个OD 输出结构的与非门74HC03，74HC03输出端MOS 管截止电流为 导通时允许的最大负载电流为这时对应的输出电压V OL （max ）=0.33V 。

负载门G 3-G 5是3输入端或非门74HC27，每个输入端的高电平输入电流最大值为 ，低电平输入电流最大值为 ，试求在 、、、、并且满足 ，的情况下， 的取值的允许范围。

第3章[题3.1] 分析图P3.1电路的逻辑功能，写出Y 1、、Y 2的逻辑函数式，列出真值表，指出电路完成什么逻辑功能。

[解]BCAC AB Y BCAC AB C B A ABC Y ++=+++++=21)(B 、C 为加数、被加数和低位的进位，Y 1为“和”，Y 2为“进位”。

[题3.2] 图P3.2是对十进制数9求补的集成电路CC14561的逻辑图，写出当COMP=1、Z=0、和COMP=0、Z=0时，Y 1～Y 4的逻辑式，列出真值表。

[解]（1）COMP=1、Z=0时，TG 1、TG 3、TG 5导通，TG 2、TG 4、TG 6关断。

3232211 , ,A A Y A Y A Y ⊕===， 4324A A A Y ++=（2）COMP=0、Z=0时，Y 1=A 1， Y 2=A 2， Y 3=A 3， Y 4=A 4。

COMP =0、Z=0的真值表从略。

[题3.3] 用与非门设计四变量的多数表决电路。

当输入变量A 、B 、C 、D 有3个或3个以上为1时输出为1，输入为其他状态时输出为0。

[解] 题3.3的真值表如表A3.3所示，逻辑图如图A3.3所示。

ABCD D ABC D C AB CD B A BCD A Y ++++= BCD ACD ABC ABC +++=B C D A C D A B D A B C ⋅⋅⋅=[题3.4] 有一水箱由大、小两台泵M L 和M S 供水，如图P3.4所示。

水箱中设置了3个水位检测元件A 、B 、C 。

水面低于检测元件时，检测元件给出高电平；水面高于检测元件时，检测元件给出低电平。

现要求当水位超过C 点时水泵停止工作；水位低于C 点而高于B 点时M S 单独工作；水位低于B 点而高于A 点时M L 单独工作；水位低于A 点时M L 和M S 同时工作。

试用门电路设计一个控制两台水泵的逻辑电路，要求电路尽量简单。

[解] 题3.4的真值表如表A3.4所示。

CHAPTER 3P3.1. The general approach for the first two parameters is to figure out which variables shouldremain constant, so that when you have two currents, you can divide them, and every variable but the ones you want to calculate remain. In this case, since the long-channel transistor is in saturation for all values of V GS and V DS , only one equation needs to be considered:()()2112DS N OX GS T DS W I C V V V Lμλ=-+ For the last two parameters, now that you have enough values, you can just choose oneset of numbers to compute their final values.a. The threshold voltage, V T0, can be found by choosing two sets of numbers with the same V DS ’s but with different V GS ’s. In this case, the first two values in the table can be used.()()()()()()211122222201022001121121.2 1.210000.82800.8DS N OX GS T DS DS N OX GS T DS T DS T DS T T W I C V V V L W I C V V V LV I V I V V μλμλ=-+=-+-⎛⎫-===⎪--⎝⎭ 00.35V T V ∴=b. The channel modulation parameter, λ, can be found by choosing two sets of numberswith the same V GS ’s but with different V DS ’s. In this case, the second and third values in the table can be used.()()221 1.225010.8247DS DS I I λλ+==+ -10.04V λ∴=c. The electron mobility, µn , can now be calculated by looking at any of the first three sets of numbers, but first, let’s calculate C OX .631062-31m 10μm22?.210μm1m 10 0.0351 1.610/2.210OX OX t C F cm--=⨯⨯===⨯Now calculate the mobility by using the first set of numbers.()()()()()()()()()()()()22111021262101111 1.21 1.222210002cm 348V-s 1.610(4.75)1.20.3510.04 1.21DS N OX GS T DS N OX T DS N OX GS T DS W W I C V V V C V L LA I W C V V V L μλμλμμλ-=-+=-+===⨯-+-+d. The body effect coefficient gamma, γ, can be calculated by using the last set of numbers since it is the only one that has a V SB greater than 0V.()()()()244124414411221 1.20.468VDS N OX GS T DS DS GS T N OX DS GS T T GS W I C V V V LI V V W C V LV V V V μλμλ=-+-=+-==-==12000.6VT T T T V V V V γγγ=+-====P3.2. The key to this question is to identify the transistor’s region of operation so that gatecapacitance may be assigned appropriately, and the primary capacitor that will dischargedat a rate of V It C ∂∂= by the current source may be identified. Then, because the nodes arechanging, the next region of operation must be identified. This process continues until the transistor reaches steady state behavior. Region 1:Since 0V GS V = the transistor is in the cutoff region. The gate capacitance is allocated to GB C . Since no current will flow through the transistor, all current will come from the source capacitor and the drain node remains unchanged.68-151010V V 6.67100.6671510s nsSB V I I t C C -∆⨯====⨯=∆⨯ The source capacitor will discharge until 1.1V GS T V V == when the transistor enters thesaturation region. This would require that the source node would be at 3.3 1.1 2.2V S G GS V V V =-=-=.()15961510 3.3 2.2 1.6510s 1.65ns 1010C t V I ---⨯∆=∆=-=⨯=⨯ Region 2:The transistor turns on and is in saturation. The current is provided from the capacitor atthe drain node, while the source node remains fairly constant. The capacitance at the drain node is the same as the source node so the rate of change is given by:68-151010V V 6.67100.6671510s nsSB V I I t C C -∆⨯====⨯=∆⨯ Since the transistor is now in the saturation region, GS V can be computed based on thecurrent flowing through the device.()22 1.1 1.37V 3.3 1.37 1.93VGS T GST S G GS kW I V V LV V V V V =-==+==-=-=This is where the source node settles. This means that most of the current is discharged through the transistor until the drain voltage reaches a value that puts the transistor at the edge of saturation.3.3 1.1 2.2VDS GS TD G T V V V V V V =-=-=-=If we assume that all the current comes from the transistor, and the source node remains fixed, the drain node will then discharge at a rate equal to that of the source node in the first region. Region 3:The transistor is now in the linear region the gate capacitance is distributed equally to both GS C and GD C . and both capacitors will discharge at approximately the same rate.-151510V0.28621510510nsV I A t C μ-∆===∆⨯⨯+⨯The graph is shown below.00.511.522.533.5024681012Time (ns)V o l t a g e (V )P3.3. The gate and drain are connected together so that DS GS V V = which will cause thetransistor to remain in saturation. This is a dc measurement so capacitances are not required. Connect the bulk to ground and run SPICE. P3.4. Run SPICE. P3.5. Run SPICE. P3.6. Run SPICE. P3.7. Run SPICE.P3.8. First, let’s look at the various parameters and identify how they affect V T .∙ L – Shorter lengths result in a lower threshold voltage due to DIBL. ∙ W – Narrow width can increase the threshold voltage.∙ V SB – Larger source-bulk voltages (in magnitude) result in a higher threshold voltage. ∙ V DS –Larger drain-source voltages (in magnitude) result in a lower threshold voltage due to DIBL. The transistor with the lowest threshold voltage has the shortest channel, larger width, smallest source-bulk voltage and largest drain-source voltage. This would be the first transistor listed.The transistor with the highest threshold voltage has the longest channel, smallest width,largest source-bulk voltage and smallest drain-source voltage. This would be the last transistor listed. P3.9. Run SPICE.P3.10. Run SPICE. The mobility degradation at high temperatures reduces I on and the increasemobile carriers at high temperatures increase I off . P3.11. The issues that prompted the switch from Al to Cu are resistance and electromigration.Copper wires have lower resistances and are less susceptible to electromigration problems. Copper on the other hand, reacts with the oxygen in SiO 2 and requires cladding around the wires to prevent this reaction.For low-k dielectrics, the target value future technologies is 2.High-k dielectrics are being developed as the gate-insulator material of MOSFET’s. This is because the current insulator material, SiO 2, can not be scaled any longer due to tunneling effects.P3.12. Self-aligned poly gates are fabricated by depositing oxide and poly before the source anddrain regions are implanted. Self-aligned silicides (salicides) are deposited on top of the source and drain regions using the spacers on the sides of the poly gate. P3.13. To compute the length, simply use the wire resistance equation and solve for L .LR TWRTWL ρρ==First convert the units of ρ to terms of μm. Aluminum:2.7μΩρ=cm 6Ω10μΩ⨯610μm100cm ⨯()()()0.027Ωμm1000.812963μm 2.96mm0.027RTWL ρ=====Copper:1.7μΩρ=cm 6Ω10μΩ⨯610μm100cm ⨯()()()0.017Ωμm1000.814706μm 4.71mm0.017RTWL ρ=====P3.14. Generally, the capacitance equation in terms of permittivity constants and spacing is:k C WL tε=a. 4k = ()()()()230048.8510 3.541100SiO k k C WL TL t S S Sεε-====b. 2k = ()()()()30028.8510 1.771100k k C WL TL t S SSεε-====The plots are shown below.Capacitance vs. Spacing01234567800.511.522.533.544.555.5Spacing (um)C a p a c i t a n c e (f F)。