Bridge Rectifier datasheet-2010 T20XB60

单端反激式开关电源磁芯尺寸和类型的选择字体大小：大|中|小2008-08-28 12:53 - 阅读：1655 -评论：1单端反激式开关电源磁芯尺寸和类型的选择徐丽红王佰营wbymcs51.blog.bokee .netA、InternationalRectifier 公司--56KHz输出功率推荐磁芯型号0---10WEFD15SEF16EF16EPC17EE19EF(D)20EPC25EF(D)2510-20WEE19EPC19EF(D)20EE,EI22EF(D)25EPC2520-30WEI25EF(D)25EPC25EPC30EF(D)30ETD29EER28(L)30-50WEI28EER28(L)ETD29EF(D)30EER3550-70WEER28LETD34EER35ETD3970-100WETD34EER35ETD39EER40E21摘自 InternationalRectifier,AN1018- “应用 IRIS40xx 系列单片集成开关 IC 开关电源的反激式变压器设计”B、ELYTON公司型号输出功率（ W）<5 5-10 10-20 20-50 50-100100-200 200-500 500-1KEI EI12.5 EI16 EI19 EI25 EI40--EI50 EI60EE EE13 EE16 EE19 EE25 EE40EE42 EE55 EE65EF EF12.6 EF16 EF20 EF25 EF30 EF32EFD -- EFD12 EFD15 EFD20 EFD25 EFD30EPC -- EPC13 EPC17 EPC19 EPC25 EPC30EER EER9.5 EER11 EER14.5 EER28 EER35 EER42EER49 --ETD ETD29 ETD34 ETD44ETD49 ETD54 --EP EP10 EP13 EP17 EP20 --RM RM4 RM5 RM6 RM10 RM12POT POT1107 POT1408 POT1811 POT2213POT3019 POT3622 POT4229 -- PQ -- -- -- PQ2016 PQ2625PQ3230 PQ3535 PQ4040EC ------------------------------ EC35 EC41 EC70摘自 PowerTransformers OFF-LINE Switch ModeAPPLICATION NOTES"Converter circuitas a function of S.M.P.S. output voltage (Vo) and output power (Po)"C、Fairchild Semiconductor 公司 -- 67KHzOutput Power EIcore EE core EPC core EER core0-10W EI12.5EE8EPC10EI16 EE10 EPC13EI19 EE13 EPC17EE1610-20WEI22EE19 EPC1920-30W EI25 EE22 EPC25 EER25.530-50WEI28 EE25EPC30 EER28EI3050-70W EI35 EE30 EER28L70-100W EI40 EE35 EER35100-150W EI50 EE40 EER40EER42150-200W EI60 EE50 EER49EE60The core quickselection table For universal input range, fs=67kHz and 12V singleoutput摘自： Application Note AN4140Transformer Design Consideration for off-lineFlybackTMConverters using Fairchild Power Switch (FPS)D 单端反激式变压器磁芯的选择公式 wbymcs51.blog.bokee .netVe =5555 * P / f式中：Ve --- 为磁芯的体积：Ve=Ae*Le；单位为：毫米立方；P ——为输入功率；单位为：瓦；f ——为开关频率；单位为：千赫兹；本公式假设：Bm=0.3T,Lg/Le=0.5%=气隙长度/磁芯等效长度；如果Lg/Le=气隙长度/磁芯等效长度=1%寸，又如何计算呢？(请考虑)输出功率、磁芯截面积和开关频率决定气隙，因为在反激式开关电源中气隙的体积大小决定储能的多少，频率决定能量传输的快慢；女口： EI25Ve=2050m3, Ae=42平方毫米，Le=49.4mm f=40KHz; n =0.75;Lg= 0.005*49.4 = 0.247mm --- 气隙长度Pin =Ve*F/5555 = 2050*40/5555 = 14.76W ；Pout = n *Pin= 0.75 * 14.76 = 11.07W;若： f=100KHz 则：Pout = 11.07W *(100/40) = 27.675W;。

•Low leakage•Surge overload rating : 35 amperes peak.•Ideal for printed circuit board.•UL certified, UL #E111753 and E326243.Absolute Maximum Ratings * T A = 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal Characteristics* Device mounted on PCB with 0.5" x 0.5" (13 x 13 mm) lead lengthElectrical Characteristics T A = 25°C unless otherwise notedSymbolParameterValueUnitsV RRM Maximum Repetitive Reverse Voltage 1000V V RMS Maximum RMS Bridge Input Voltage 700V V R DC Reverse Voltage (Rated V R )1000V I F(AV)Average Rectified Forward Current, @ T A = 50°COn Glass-epoxy P .C.B. On Aluminum substrate 0.50.8A I FSM Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 35A T STG Storage Temperature Range -55 to +150°C T JOperating Junction Temperature-55 to +150°CSymbolParameter ValueUnitsP D Power Dissipation1.4W R θJA Thermal Resistance, Junction to Ambient,* per leg 85°C/W R θJLThermal Resistance, Junction to Lead,* per leg20°C/WSymbolParameterValueUnitsV F Forward Voltage, per bridge @ 0.5 A1.0V I RReverse Current, per leg @ Rated V R T A = 25°C T A = 125°C 5.00.5µA mA I 2t rating for fusing t < 8.3 ms5.0A 2s C TTotal Capacitance, per leg V R = 4.0V, f = 1.0MHz13pFSOIC-4Polarity symbols molded or marking on bodyFigure 4. Typical Junction Capacitance Per Leg Figure 3. Maximum Non-Repetitive PeakForward Surge Current Per LegFigure 5. Typical Forward VoltageCharacteristics Per LegThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notAccuPower¥Auto-SPM¥Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥ESBC¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FPS¥F-PFS¥FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥OptoHiT™OPTOLOGIC®OPTOPLANAR®®PDP SPM™Power-SPM¥PowerTrench®PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET¥SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS®SyncFET¥Sync-Lock™®*The Power Franchise®TinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TriFault Detect¥TRUECURRENT¥*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息: FAIRCHILDMB10S。

Board Station XEPCB LayoutD A T A S HE E Tw w w.m e n t o r.c o mBoard Station XE is the technology leader for the creation of today’s most complex PCB designs.Board Station XE — Powered by AutoActive TechnologyThe Board Station® XE layout tool, powered byAutoActive® technology, is an integral part of the tightly integrated Board Station XE design flow. By combining ease-of-use with advanced functionality, Board Station XE offers designers the leading technology for the creation of today’s most complex designs. Board Station XE includes interactive and customizable multi-pass autorouting controls for design challenges such as differential pair routing, net tuning, manufacturing optimization and microvia and build-up technology.AutoActive — The Technology Leader in PCB DesignAutoActive technology represents a revolutionary step forward for PCB design. The power of industry-leadingauto-routing technology is combined with interactive editing capabilities to produce a single, powerful and easy-to-use design environment. This environment eliminates the burdens of jumping between tools to get your job done and managing differences between the constraints on the autorouter and on interactive editing.AutoActive provides designers with greater control than ever before, with the ability to easily switch between auto-matic and manual editing. From simple tasks, such as defining board areas, to complex procedures that involve maintaining high-speed signal conditions, all objectives are accomplished with the system and the designer working together in real-time. The net result of AutoActive technology is reduced design times, increased productivity and unmatched design quality.What is AutoActive Technology?· A single, integrated, place and route editing environment that reducestotal design time and increasesproductivity·All physical rules and high-speed rules are maintained ·Correct-by-construction design that produces high-quality results withclean-up time eliminated ·Shape-based, true 45 degree routing ·The most advanced autorouting technology ever. Stop and start theautorouter at any time and all results will be correct-by-construction ·Dynamic clean-up of traces through the reduction of segments, preven-tion of acute angles and applicationof pad entry rulesDynamic Area FillsBoard Station XE automatically clears area fills around traces, vias and pads as the board is edited. Dynamic area fills are so fast, Board Station XE allows you to keep your area fillsturned on while you are doing all youredits. Moving a via pushes and shovesother vias, traces and area fills andconnectivity is automatically main-tained.Rules By AreaRules by area functionality greatlyimproves routing around BGAs andother fine-pitched parts. Rule areasrepresent complete rule sets that areobeyed by online and batch DRC and ininteractive and automatic routing. Ruleareas may be defined by layer and canbe assigned to any polygon, rectangle orcircle. Trace widths and clearancesautomatically change when traversinginto or out of the rule area. You mayalso change via sizes and spans in a rulearea to maximize route completion.Multiplow With Variable ViaPatternsBoard Station XE’s multiplow func-tionality allows you to simultaneouslyroute multiple nets, including differen-tial pairs, with true 45 degree routing. Itcan even handle routing through areasof staggered pins. Traces being routedwill push and shove the other vias andtraces out of the way and automaticallyclear area fills as needed. Changes canbe easily made to a variety of selectablevia patterns at the touch of a button,allowing enhanced flexibility forrouting into dense areas of a design.Dynamic Hazard ReviewDesign hazards are dynamicallydisplayed and may be individuallyselected and colored for easy identifica-tion. When a hazard is fixed, it isdynamically removed from the hazardlist.Leverages Legacy Board StationFlowBoard Station XE can be usedquickly and easily by existing BoardStation Layout customers. First, BoardStation XE uses the same libraries(geometries) as the legacy flow. BoardStation XE is integrated with he samefront-end tools and library managementsystem as the legacy tools. Finally,customers can easily import legacyBoard Station Layout designs intoBoard Station XE in order to start newdesigns from an existing one. This allgives customers access to the state-of-the-art layout environment using theirexisting library infrastructure and front-end tools.Board Station XE features market-leading technology for advanced interconnect.High-Speed Design with Board Station XEDesigners today are increasingly challenged by the need to manage signal quality in order to achieve system performance and reduce proto-type iterations. High-speed design with Board Station XE is an integrated part of the AutoActive design environment.Constraint DefinitionBoard Station XE handles an exten-sive set of constraints to meet high-speed performance requirements whether you’re routing interactively or automatically. A common constraint definition environment is shared between schematic capture and layout, allowing the evaluation of critical signals at any design stage. Constraints include same layer and adjacent layer differential pairs, controlled impedance, net scheduling and delay.Net TuningWhile routing interactively, graphic tuning aids are displayed for guidance. Nets modified out-of-tune during edits are automatically re-tuned. The Hazards dialog box dynamically updates as you edit nets, providing instant feedback relative to your constraints. Nets can also be tuned within an autoroute pass. Tuned nets are automatically maintained as you complete the design.Differential Pair RoutingRouting and editing differential pairs with Board Station XE is accomplished with speed and ease that will change your view of high-speed design. Pair spacing rules can be established by both layer and net class. If one trace is edited, the other trace in the pair auto-matically moves with it. Adjacent layerdifferential pair routing capabilities addanother valuable option for routing crit-ical signals on a dense PCB.Xtreme TechnologyPatented Xtreme design technologyenables up to 15 clients to operate on acommon database simultaneously tointeractively develop PCB layouts(XtremePCB) and perform complexmulti-process auto-routing (XtremeAR)while reducing cycle times by up to70%.Advanced InterconnectRoutingThe challenges and of advancedinterconnect are prevalent today withBGA, CSP, COB and DCA packagesincreasing board density. Build-up andmicrovia structures used in these boarddesigns further complicate routing.Board Station XE, powered byAutoActive technology, offers theleading technology for advanced inter-connect designs.Board Station XE supports the defi-nition of complex via structure rulesand the routing of microvia geometries,including comprehensive via-in-padrules. Via spans between any two layersare possible. By moving beyond tradi-tional laminate layer pairing, BoardStation XE facilitates the design ofbuild-up structures on laminate toenable escape patterns from dense, highpin count devices. Build-up areas typi-cally have a smaller clearance than thelaminate beneath them. Board StationXE can establish delay values andclearances per via span to address theseissues. Additionally, Board Station XEfeatures true 45 degree routing for BGAfanout and staggered connectors,enabling localized rule definition tofacilitate escape paths from dense areas. Board Station XE features powerful differential pair routing and net tuning capabilities for advanced high-speed design.MF-04-081025940-wTo learn more about how Board Station XE can improve your PCB layout process, call Mentor Graphics to schedule a complete product demonstra-tion or visit our web site at / for the latest product news.Copyright © 2007 Mentor Graphics Corporation.Mentor Graphics, Board Station and AutoActive are registered trademarks and Xtreme and FabLink are trademarks of Mentor Graphics Corporation.All other trademarks mentioned in this document are trademarks of their respective owners.Printed on RecycledPaperFabLink XE Pro IntegrationBoard Station XE is tightly inte-grated with the new FabLink XE Pro manufacturing data preparation tools FabLink XE Pro provides a stand alone panel creation and editing environment for creating manufacturing data at the panel level that operates on a panel design database. In addition, it provides additional board level functionality,including detailed data views, search-able PDF output, copper balancing,various data outputs and Gerber In/Drill In capabilities. Manufacturing Output Validation (MOV) quickly and easily identifies out of date manufacturing data compared to the design data.FabLink XE interacts with design data at three levels: ManufacturingPreparation, Manufacturing Output and Documentation.Operating System Requirements •Windows 2000 •Windows Server 2003•Windows XP Professional •Linux•Red Hat Enterprise 3(Server & Desktop) •Red Hat Enterprise 4(Server & Desktop) •Red Hat Enterprise 5(Server & Desktop)•SUSE Enterprise 9(Server & Desktop)•SUSE Enterprise 10 (Server & Desktop)•Sun Solaris 2.8, 2.9, 2.10, X86Corporate Headquarters Mentor Graphics Corporation 8005 SW Boeckman Road Wilsonville, OR 97070-7777Phone: 503.685.7000Fax: 503.685.1204Sales and Product Information Phone: 800.547.3000Silicon ValleyMentor Graphics Corporation 1001 Ridder Park DriveSan Jose, California 95131 USA Phone: 408.436.1500Fax: 408.436.1501North American Support Center Phone: 800.547.4303EuropeMentor Graphics Deutschland GmbH Arnulfstrasse 20180634 Munich GermanyPhone: +49.89.57096.0Fax: +49.89.57096.40Pacific RimMentor Graphics (Taiwan)Room 1603, 16FInternational Trade BuildingNo. 333, Section 1, Keelung Road Taipei, Taiwan, ROC Phone: 886.2.87252000Fax: 886.2.27576027JapanMentor Graphics Japan Co., Ltd.Gotenyama Hills7-35, Kita-Shinagawa 4-chome Shinagawa-Ku, Tokyo 140 JapanPhone: 81.3.5488.3033Fax: 81.3.5488.3021。

® Flex Product Data Sheet DS 460Vesta Flex PlatformThe Bridgelux Vesta Flex Dual Channel Driver and Control Module family is a bundled system, guaranteed to work together out of the box, that enables seamless control of the Bridgelux Vesta Series Tunable White Arrays and Modules. The Driver's high resolution dimming and tuning algorithm provides for smooth and flicker-free CCT tuning, dimming to 0.1%, and dim-to-off. These specification grade drivers and control modules are separate devices which, when connected via an ethernet cable, form a smart and flexible lighting control system. These Vesta Flex Control Modules are intended for use with a Vesta Flex Dual Channel Driver and to be factory installed as incorporated products. The platform offers a number of driver and control module options to choose from, enabling application flexibility and interoperability with third party systems. These different control modules support wired control protocols such as DALI-2 DT8 and 0-10V as well as wireless control protocols with WiFi and Bluetooth mesh. These platforms come with ready-built iOS and Android apps and web portals which provide for commissioning, light management, and services designed to expand the capability of modern lighting systems. Vesta Flex is a future-ready solution, designed to quickly adapt to new control systems without requiring luminaire recertification.Vesta Flex Platform OverviewVesta FlexControlModuleLighting systems with 0-10V wired control devicesThe Vesta Flex Dual 0-10V Control Module is compatible with industry standard 0-10V, 1-10V current sourcing or current sinking wired control devices. The Control Module provides for two-channel control of color temperature and intensity.Product Feature MapBridgelux Vesta Flex Control Module features a control port with an RJ45 terminal which enables plug-and-playconnectivity with any Vesta Flex Dual Channel Driver control port. The Control Module receives auxiliary power from the Driver via the RJ45 control port and communicates with the Driver via a dual channel PWM signal.The control module receives its control inputs via two pairs of analog 0-10V signal wires, one pair for intensity dimming and one pair for CCT tuning.Please visit for more information on compatible Vesta Flex Dual Channel Driver and Vesta Series Tunable White arrays and modules.Product NomenclatureThe part number designation for Bridgelux Vesta Flex Dual 0-10V Control Module is explained as follows:1,2,3,4 5,6,7, 9,10,11, 14,15, 16Product FamilyBXCS = Control & SensorsProduct Version 02 = Version 2Output Protocol P = PWMMounting holesInput Voltage12 = 12VBXCSN2P02A----Control port compatible with Ves-ta Flex Dual Channel Driver12AIntegrated SensorsN = NoneOutput Channels2 = Dual Channel (WW, CW)Control InputA = Analog (Dual 0-10V)Product Generation A = Generation A Poke-in connector for 0-10V controlsTable 2:Electrical CharacteristicsElectrical CharacteristicsVesta Flex Control Modules are designed to connect and communicate with all Vesta Flex Dual Channel Drivers out of the box. Any 8P8C category ethernet cable with RJ45 connectors may be used to connect the Control Module and the Driver via the RJ45 port. The communication between the control module and the driver is asymmetric. The Vesta Flex Dual Channel Driver will not work without this asymmetric communication signal from the Vesta Flex control module.The Vesta Flex Driver automatically detects which control module is connected to it and adjusts its settings accordingly. This feature allows to simply plug-and-play any Vesta Flex Control Module with any Vesta Flex Dual Channel Driver regardless of the chosen communication protocol on the Vesta Flex Control Module.Bridgelux recommends the use of an ethernet cable that is commonly available and recognized by the Telecommunica-tions Industries Association (TIA), e.g. Cat 5e, Cat 6 and Cat 6a cables.The maximum length of such an ethernet cable is 300m.Control Port ConnectionNotes for Figure 1:1. When the Vesta Flex 0-10V Control Module is dimmed down and thesignal voltage reaches 0.85V, then the Driver output power goes tozero and the Driver goes in standby mode. When the Control Module is dimmed up and the dimming control signal voltage reaches 0.95V, then the Driver exits standby mode and turns on its output power at minimum output current. That hysteresis prevents any potental flicker when the dimming control voltage drops below 1.0V.Control CharacteristicsTable 4:Control Signal CharacteristicsMinimum Dimming LevelOffOn from standby mode Offand standby modeDimming startFigure 1: Control Signal Dim-To-Off Hysteresis Lowest CCT Tuning LimitTuning startFigure 2: Control Signal at Lowest CCT LimitNotes for Figure 2:1. When the Vesta Flex 0-10V Control Module is tuned to its lowest CCT limit and the signal voltage drops below 1.0V, then Driver output maintains its current state resulting in a constant CCT at the lowest limit.Terminal ConfigurationInput TerminalFigure 3: Terminal ConfigurationControl PortNotes for Table 6:1. The - 0-10V Dim and the - 0-10V CCT terminals are internally connected to a common ground.Mechanical Characteristics Table 7:Control Module Mechanical CharacteristicsEnvironmental and Regulatory StandardsDesign ResourcesApplication NotesPlease contact your Bridgelux sales representative for assistance on obtaining application support when designing with the Bridgelux Vesta Flex Dual Channel Driver and Control Modules. For a list of available resources, visit .3D CAD ModelsCAD models depicting the Vesta Flex Wireless Control module are available in both IGES and STEP formats. Please contact your Bridgelux sales representative for assistance.PrecautionsCAUTION: PRODUCT HANDLINGHandle the Vesta Flex Control Module with care to prevent any damage from mechanical shock.It is recommended to handle this module in a static-free environment.Do not open or disassemble the product.To maintain product warranty, the installer is responsible for ensuring that the module's operating conditions do not exceed the maximum conditions stated within this data sheet.CAUTION: PRODUCT INSTALLATIONIncorrect installation of the Vesta Flex wireless control module can cause irreparable damage to the module, connected Vesta Flex Driver and/or connected LEDs.When connecting the Vesta Flex wireless control module with the Vesta Flex Dual Channel Driver, make sure that the RJ45 connectors are locked in the RJ45 ports.The product is intended for factory installation in a panel or into a controlled equipment.DisclaimersMINOR PRODUCT CHANGE POLICYThe rigorous qualification testing on products offered by Bridgelux provides performance assurance. Slight cosmetic changes that do not affect form, fit, or function may occur as Bridgelux continues product optimization.11About Bridgelux: Bridging Light and Life™© 2020 Bridgelux, Inc. All rights reserved 2020. Product specifications are subject to change without notice. Bridgelux, the Bridgelux stylized logo design and Vesta are regis -tered trademarks of Bridgelux, Inc. Bridging Light and Life is a trademark of Bridgelux, Inc. All other trademarks are the property of their respective owners.Bridgelux Vesta Flex Dual 0-10V Control Module Data Sheet DS460 Rev. B (10/2020)46430 Fremont BlvdFremont, CA 94538 USATel (925) 583-8400At Bridgelux, we help companies, industries and people experience the power and possibilityof light. Since 2002, we’ve designed LED solutions that are high performing, energy efficient,cost effective and easy to integrate. Our focus is on light’s impact on human behavior, deliveringproducts that create better environments, experiences and returns—both experiential andfinancial. And our patented technology drives new platforms for commercial and industrialluminaires.For more information about the company, please visit /Bridgelux /Bridgelux /user/Bridgelux /company/bridgelux WeChat ID: BridgeluxInChina。

THRU 20Amp Features• Meatl of Silicon Rectifier, Majority Conduct i on • Guard ring for transient protection • Low Forward Voltage Drop• High Current Capability, High Efficiency • Marking : type numberMCC Catalog Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC BlockingVoltageMBR2020CT 20V 14V 20V MBR2030CT 30V 21V 30V MBR2035CT 35V 24.5V 35V MBR2040CT 40V 28V 40V MBR2045CT 45V 31.5V 45V Electrical Characteristics @ 25°C Unless Otherwise SpecifiedAverage Forward CurrentI F(AV)20 A T A = 120°C Peak Forward Surge Current I FSM 150A 8.3ms, half sineMaximum Instantaneous Forward Voltage2020CT-2045CT 2060CTV F .70V.80V *Pulse Test: Pulse Width 300µsec, Duty Cycle 2%2020CT-2045CT2060CT.84V .95V 2080CT-20100CT .95VI FM = 20A;T A =25°C I FM = 10A;T A =25°C 2080CT-20100CT.85V 2020CT-2045CT2060CT.72V .85V 2080CT-20100CT .85VI FM = 20A;T A =125°C MBR20100CT 100V 70V 100VMBR2080CT 80V 56V 80V MBR2060CT 60V 42V 60VI R20to 100 Volts Maximum DC Reverse Current At Rated DC Blocking Voltage2020CT~2045CT 2060CT~20100CT 2020CT~2045CT 2060CT~20100CTT A = 25°C T A =125°C0.1mA 0.15mA 50mA 150mABarrier Rectifier SchottkyMBR2020CTMBR20100CT***• Operating Temperature: -55°C to +150°C • Storage Temperature: -55°C to +150°C• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Revision: A 2011/06/01www.mccsemi .com1 of 3•Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1Micro Commercial ComponentsNotes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.omp onents 20736 Marilla Street Chatsworth! "# $ % ! "#Maximum RatingsMounting Torgue: 5 in-lbs Maximum• h t t p ://o n e i c.c o m /MBR2020CT thru MBR20100CTAverage Forward Rectified Current - Amperes versus Ambient Temperature - °CAmps°CFigure 1Typical Forward Characteristics 462010Amps .01.02.04.06.1.2.4.612Figure 2Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - CyclesRevision: A 2011/06/01TMMicro Commercial Componentswww.mccsemi .com2 of 3/Revision: A 2011/06/01Micro Commercial Componentswww.mccsemi .com3 of 3Ordering InformationDevice Packing(Part Number)-BPBulk;1Kpcs/Box***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is takingstrong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encouragescustomers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country onour web page cited below . Products customers buy either from MCC directly or from Authorized MCC Distributors are genuineparts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors./分销商库存信息: MICRO-COMMERICAL-CO MBR20100CT-BP。

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.TB05S-TB10SBridge Rectifier Diode 整流桥■Features 特点Glass passivated chip junction 玻璃钝化结High surge current capability 高浪涌电流能力Reflow Solder Temperature 220℃回流焊温度220度Package 封装:TBS■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号TB05S TB1S TB2S TB4S TB6S TB8S TB10S Unit 单位Peak Reverse Voltage 反向峰值电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R(DC)501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 1A Peak Surge Current 峰值浪涌电流I FSM 30A Thermal Resistance J-A 结到环境热阻R θJA 75℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg150℃,-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Typ 典型值Max 最大值Unit 单位Condition 条件Forward Voltage 正向电压降V F 1V I F =0.4A Reverse Current (T A =25℃)反向漏电流(T A =125℃)I R 5500uA V R =V RRM Diode Capacitance 二极管电容C D10pFV R =4V,f=1MHz安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.TB05S-TB10S ■Typical Characteristic Curve典型特性曲线Figure1:Forward Current Derating Curve Figure2:Peak Forward Surge CurrentFigure3:Instantaneous Forward Characteristics Figure4:Reverse Leakage Characteristics■Dimension外形封装尺寸TBS Dimensions in inches and(millimeters)。

格恩半导体产品规格书English Answer:Product Specification for Geon Semiconductor.Introduction:Hello everyone! Today, I am going to provide you with the detailed specifications of our Geon Semiconductor products. Geon Semiconductor is a leading semiconductor company that specializes in the design and manufacturing of high-quality electronic components. Our products are known for their exceptional performance, reliability, and advanced features. Let's dive into the specifications!1. Product Name: Geon Semiconductor.Model: GS-1000。

Type: Integrated Circuit (IC)。

2. Electrical Specifications:Operating Voltage: 3.3V.Current Consumption: 50mA.Frequency Range: 1MHz to 100MHz.Output Power: 10dBm.Input Impedance: 50 Ohms.Operating Temperature: -40°C to 85°C.3. Features:High-speed data transmission.Low power consumption.Wide frequency range.Stable performance.Compact size.Easy integration with existing systems.4. Applications:Our Geon Semiconductor products find applications in various industries, including telecommunications, automotive, consumer electronics, and industrial automation. Here are a few examples:Telecommunications: Our ICs are used in mobile phones, routers, and base stations to enable fast and reliable data transfer.Automotive: Geon Semiconductor components areintegrated into vehicle navigation systems, entertainment systems, and engine control units for enhanced performance and connectivity.Consumer Electronics: Our products are found in smart TVs, gaming consoles, and wearable devices, providing seamless connectivity and improved user experience.Industrial Automation: Geon Semiconductor ICs are utilized in factory automation systems, robotics, and control panels to ensure efficient and reliable operation.中文回答：格恩半导体产品规格书。

Rejection base plug fuses – dual-element, time-delay 125 volt, up to 30 ampsCatalog symbol:• S - (amps)• BP/S - (amps)Description:Bussmann® series dual-element, time-delay rejection base plug fuse.Specifications:Ratings• Volts — 125 Vac or less• Amps — 1/4 to 30 A• Interrupting rating — 10 kA RMS Sym Agency Information• UL® Listed (up to 6-1/4 A), Std. 248-11, Guide JFHR, File E56412, (7 to 30 A) Guide JEFV, File E12112• CSA® Certified, Class 1423-01, File 53787•CES - 3/10S - 2-1/4S - 7 S - 4/10S - 2-1/2S - 8 S - 1/2S - 2-8/10S - 9 S - 6/10S - 3S - 10 S - 8/10S - 3-2/10S - 12 S - 1S - 3-1/2S - 14 S - 1-1/8S - 4S - 15 S - 1-1/4S - 4-1/2S - 20 S - 1-4/10S - 5S - 25 S - 1-6/10S - 5-6/10S - 30 S - 1-8/10S - 6—Package quantity and weight15 to 30 A420.240.68 Edison base adaptorsTechnical Data 1032Effective May 2016For Eaton’s Bussmann series product information,call 1-855-287-7626 or visit:/bussmannseriesEaton and Bussmann are valuabletrademarks of Eaton in the US and other countries. You are not permitted to use the Eaton trademarks without prior written consent of Eaton.CSA is a registered trademark of the Canadian Standards Group.UL is a registered trademark of the Underwriters Laboratories, Inc.Eaton1000 Eaton Boulevard Cleveland, OH 44122United States Bussmann Division 114 Old State Road Ellisville, MO 63021United States/bussmannseries © 2016 EatonAll Rights Reserved Printed in USAPublication No. 1032 – SB02374May 2016Follow us on social media to get thelatest product and support information.The only controlled copy of this Data Sheet is the electronic read-only version located on the Eaton Network Drive. All other copies of this document are by definition uncontrolled. This bulletin is intended to clearly present comprehensive product data and provide technical information that will help the end user with design applications. Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin. Once a product has been selected, it should be tested by the user in all possible applications.Features:• Heavy duty, dual-element, time-delay rejection base fuse •Use to protect critical motor circuits or motors that cycle on/off frequently• Features non-interchangeable body•An industrial/commerical grade product with dual-element construction• These fuses thread into SA adaptors•Industrial strength, featuring exclusive dual-element construction•This spring loaded design provides superior short circuit and overload protection•More time-delay than the medium duty Type SL fuses in order to better protect industrial motors and critical residential circuits101001000200041001010.10.0115203T i m e i n s e c o n d sAmp ratingCurrent in ampsTime-current curve – average meltRejection base plug fusesdual-element, time-delay 125 volt, up to 30 amp。

MP23591.2A, 24V, 1.4MHzStep-Down Converter in a TSOT23-6The Future of Analog IC TechnologyTMTMDESCRIPTIONThe MP2359 is a monolithic step-down switch mode converter with a built-in power MOSFET. It achieves 1.2A peak output current over a wide input supply range with excellent load and line regulation. Current mode operation provides fast transient response and eases loop stabilization. Fault condition protection includes cycle-by-cycle current limiting and thermal shutdown.The MP2359 requires a minimum number of readily available standard external components. The MP2359 is available in TSOT23-6 and SOT23-6 packages.EVALUATION BOARD REFERENCEBoard Number Dimensions EV2359DJ-00B2.1”X x 1.9”Y x 0.4”ZFEATURES• 1.2A Peak Output Current• 0.35Ω Internal Power MOSFET Switch• Stable with Low ESR Output CeramicCapacitors• Up to 92% Efficiency • 0.1µA Shutdown Mode • Fixed 1.4MHz Frequency • Thermal Shutdown• Cycle-by-Cycle Over Current Protection • Wide 4.5V to 24V Operating Input Range • Output Adjustable from 0.81V to 15V• Available in TSOT23-6 and SOT23-6PackagesAPPLICATIONS• Distributed Power Systems • Battery Charger• Pre-Regulator for Linear Regulators • WLED Drivers“MPS” and “The Future of Analog IC Technology” are Trademarks of Monolithic Power Systems, Inc.TYPICAL APPLICATIONEfficiency vs Load Currents1009080706050403020100LOAD CURRENT (A)E F F I C I E N C Y (%)0.010.1110PACKAGE REFERENCE* For Tape & Reel, add suffix –Z (eg. MP2359DJ–Z) For RoHS compliant packaging, add suffix –LF (eg.MP2359DJ–LF–Z) ABSOLUTE MAXIMUM RATINGS (1) Supply Voltage V IN (26V)V SW.......................................–0.3V to V IN + 0.3V V BS .......................................................V SW + 6V All Other Pins.................................–0.3V to +6V Junction Temperature...............................150°C Lead Temperature....................................260°C Storage Temperature..............–65°C to +150°C Recommended Operating Conditions (2) Supply Voltage V IN...........................4.5V to 24V Output Voltage V OUT......................0.81V to 15V Ambient Temperature................–40°C to +85°C Thermal Resistance (3)θJA θJCTSOT23-6..............................220....110..°C/W SOT23-6................................220....110..°C/W Notes:1) Exceeding these ratings may damage the device.2) The device function is not guaranteed outside of therecommended operating conditions.3) Measured on approximately 1” square of 1 oz copper.ELECTRICAL CHARACTERISTICSV IN = 12V, T A = +25°C, unless otherwise noted.Parameters SymbolConditionMinTypMaxUnitsFeedback Voltage V FB 4.5V ≤ V IN≤ 24V 0.790 0.810 0.830 VFeedback Current I FB V FB = 0.8V 0.1 µASwitch-On Resistance (4)R DS(ON)0.35 ΩSwitch Leakage V EN = 0V, V SW = 0V 10 µACurrent Limit (4) 1.8A Oscillator Frequency f SW V FB = 0.6V 1.2 1.4 1.7 MHzFold-back Frequency V FB = 0V 460 KHzMaximum Duty Cycle V FB = 0.6V 87 %Minimum On-Time (4)t ON100 nsUnder Voltage Lockout Threshold Rising 2.5 2.8 3.1 VUnder Voltage Lockout Threshold Hysteresis150 mVEN Input Low Voltage 0.4 VEN Input High Voltage 1.2 VV EN = 2V 2.1EN Input CurrentV EN = 0V 0.1µASupply Current (Shutdown) I S V EN= 0V 0.1 1.0 µASupply Current (Quiescent) I Q V EN= 2V, V FB = 1V 0.8 1.0 mAThermal Shutdown (4)150°C Note:4) Guaranteed by design.PIN FUNCTIONSPin # Name Description1 BST Bootstrap. A capacitor is connected between SW and BS pins to form a floating supply acrossthe power switch driver. This capacitor is needed to drive the power switch’s gate above thesupply voltage.2 GND Ground. This pin is the voltage reference for the regulated output voltage. For this reason caremust be taken in its layout. This node should be placed outside of the D1 to C1 ground path toprevent switching current spikes from inducing voltage noise into the part.3 FBFeedback. An external resistor divider from the output to GND, tapped to the FB pin sets the output voltage. To prevent current limit run away during a short circuit fault condition, thefrequency foldback comparator lowers the oscillator frequency when the FB voltage is below 250mV.4 EN On/Off Control Input. Pull EN above 1.2V to turn the device on.5 INSupply Voltage. The MP2359 operates from a +4.5V to +24V unregulated input. C1 is neededto prevent large voltage spikes from appearing at the input.6 SW Switch Output.TYPICAL PERFORMANCE CHARACTERISTICSV IN = 12V, V OUT = 3.3V, L = 4.7µH, C1 = 10µF, C2 = 22µF, T A= +25ºC, unless otherwise noted.Efficiency vs Load CurrentLOAD CURRENT (A)1009080706050403020100E F F I C I E N C Y (%)0.010.1110LOAD CURRENT ( A)Efficiency vsLoad CurrentFeedback Voltage vs Die TemperatureF E E D B A C K V O L T AG E (V )0.8200.8180.8160.8140.8120.8100.8080.8060.8040.8020.800DIE TEMPERATURE (O C)-50-250257510012550150Switching Frequency vs Die TemperatureS W I T C H I N G F R E Q U E N C Y (M H z )1.501.481.461.441.421.401.381.361.341.321.30DIE TEMPERATURE (O C)-50-2502575100125501501TYPICAL PERFORMANCE CHARACTERISTICS(continued)V IN = 12V, V OUT = 3.3V, L = 4.7µH, C1 = 10µF, C2 = 22µF, T A = +25ºC, unless otherwise noted.V SW 10V/div.V EN 5V/div.V OUT 1V/div.I L1A/div.Start-up through EnableI OUT = 1A Resistive LoadV OUT 1V/div.V SW 10V/div.V EN 5V/div.Start-up through EnableNo LoadVOUT 2V/div.V SW 10V/div.V EN 5V/div.I L1A/div.Shut-down through EnableNo LoadShut-down through EnableI OUT = 1A Resistive LoadI L500mA/div.V OUT 2V/div.V SW10V/div.V EN 5V/div.I L 1A/div.V OUT 1V/div.I L 1A/div.Short Circuit Entry Short Circuit Recovery V OUT 1V/div.I L 1A/div.400ns/div.Steady State TestI OUT = 0.5AV OUTAC Coupled 50mV/div.I L 1A/div.I LOAD 1A/div.V OUT 20mV/div.V SW 10V/div.I L500mA/div.Current Limit vs Duty CycleC U R R E N T L I M I T (A )3.02.52.01.51.00.50DUTY CYCLE (%)20406080100OPERATIONThe MP2359 is a current mode buck regulator. That is, the EA output voltage is proportional to the peak inductor current.At the beginning of a cycle, M1 is off. The EA output voltage is higher than the current sense amplifier output, and the current comparator’s output is low. The rising edge of the 1.4MHz CLK signal sets the RS Flip-Flop. Its output turns on M1 thus connecting the SW pin and inductor to the input supply.The increasing inductor current is sensed and amplified by the Current Sense Amplifier. Ramp compensation is summed to the Current Sense Amplifier output and compared to the Error Amplifier output by the PWM Comparator. When the sum of the Current Sense Amplifier output and the Slope Compensation signal exceeds the EA output voltage, the RS Flip-Flop is reset and M1 is turned off. The external Schottky rectifier diode (D1) conducts the inductor current. If the sum of the Current Sense Amplifier output and the Slope Compensation signal does not exceed the EA output for a whole cycle, then the falling edge of the CLK resets the Flip-Flop. The output of the Error Amplifier integrates the voltage difference between the feedback and the 0.81V bandgap reference. The polarity is such that a FB pin voltage lower than 0.81V increases the EA output voltage. Since the EA output voltage is proportional to the peak inductor current, an increase in its voltage also increases current delivered to the output.IN ENFB GNDSWBST Figure 1—Functional Block DiagramAPPLICATION INFORMATIONSetting Output VoltageThe external resistor divider is used to set the output voltage (see the schematic on front page). Table 1 shows a list of resistor selection for common output voltages. The feedback resistor R1 also sets the feedback loop bandwidth with the internal compensation capacitor (see Figure 1). R2 can be determined by:1V81.0V 1R 2R OUT−=Table 1—Resistor Selection for CommonOutput VoltagesV OUT (V) R1 (k Ω) R2 (k Ω) 1.8 80.6 (1%) 64.9 (1%) 2.5 49.9 (1%) 23.7 (1%) 3.3 49.9 (1%) 16.2 (1%) 549.9 (1%)9.53 (1%)Selecting the InductorA 1µH to 10µH inductor with a DC current rating of at least 25% percent higher than the maximum load current is recommended for most applications. For highest efficiency, the inductor’s DC resistance should be less than 200m Ω. Refer to Table 2 for suggested surface mount inductors. For most designs, the required inductance value can be derived from the following equation.SWL IN OUT IN OUT f I V )V V (V L ×∆×−×=Where ∆I L is the inductor ripple current.Choose the inductor ripple current to be 30% of the maximum load current. The maximum inductor peak current is calculated from:2I I I LLOAD )MAX (L ∆+= Under light load conditions below 100mA, a larger inductance is recommended for improved efficiency. See Table 2 for suggested inductors. Also note that the maximum recommended load current is 1A if the duty cycle exceeds 35%.Selecting the Input CapacitorThe input capacitor reduces the surge current drawn from the input supply and the switching noise from the device. The input capacitor impedance at the switching frequency should be less than the input source impedance to prevent high frequency switching current from passing through the input. Ceramic capacitors with X5R or X7R dielectrics are highly recommended because of their low ESR and small temperature coefficients. For most applications, a 4.7µF capacitor is sufficient.Selecting the Output CapacitorThe output capacitor keeps the output voltage ripple small and ensures feedback loop stability. The output capacitor impedance should be low at the switching frequency. Ceramic capacitors with X5R or X7R dielectrics are recommended for their low ESR characteristics. For most applications, a 22µF ceramic capacitor will be sufficient.PC Board LayoutThe high current paths (GND, IN and SW) should be placed very close to the device with short, direct and wide traces. The input capacitor needs to be as close as possible to the IN and GND pins. The external feedback resistors should be placed next to the FB pin. Keep the switch node traces short and away from the feedback network. External Bootstrap DiodeIt is recommended that an external bootstrap diode be added when the input voltage is no greater than 5V or the 5V rail is available in the system. This helps improve the efficiency of the regulator. The bootstrap diode can be a low cost one such as IN4148 or BAT54.10nFIN (4.5V to 5V)Figure 2—External Bootstrap Diode This diode is also recommended for high duty cycle operation (whenINOUTV V >65%) applications.Table 2—Suggested Surface Mount InductorsManufacturer Part Number Inductance(µH) Max DCR(Ω)CurrentRating (A)DimensionsL x W x H (mm3)Toko A921CY-4R7M 4.7 0.027 1.66 6 x 6.3 x 3 Sumida CDRH4D28C/LD 4.7 0.036 1.5 5.1 x 5.1 x 3 Wurth Electronics 7440530047 4.7 0.038 2.0 5.8 x 5.8 x 2.8 TYPICAL APPLICATION CIRCUITSV OUT3.3VFigure 3—1.4MHz, 3.3V Output at 1A Step-Down ConverterFigure 4—White LED Driver ApplicationPACKAGE INFORMATIONTSOT23-66) DRAWING IS NOT TO SCALE.DETAIL “A”7) PIN 1 IS LOWER LEFT PIN WHEN READING TOP MARK FROMLEFT TO RIGHT, (SEE EXAMPLE TOP MARK)NOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications.SOT23-6DETAIL “A”6) DRAWING IS NOT TO SCALE.7) PIN 1 IS LOWER LEFT PIN WHEN READING TOP MARK FROM LEFT TO RIGHT, (SEE EXAMPLE TOP MARK)。

Major Ratings and Characteristics I F(AV)Rectangular16A waveform V RRM35 - 45V I FSM @ tp = 5 μs sine 1800A V F @ 16 Apk, T J = 125°C0.57V T J- 65 to 150°CCharacteristicsValuesUnitsDescription/ FeaturesThe MBR16.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power sup-plies, converters, free-wheeling diodes, and reverse battery protection.150° C T J operationHigh purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistanceLow forward voltage drop High frequency operationGuard ring for enhanced ruggedness and long term reliabilityLead-Free ("PbF" suffix)SCHOTTKY RECTIFIER16 AmpBulletin PD-21044 rev. A 06/061 MBRB16..PbFI F(AV) = 16Amp V R = 35 - 45VBulletin PD-21044 rev. A 06/06MBRB16..PbF SeriesI F(AV)Max. Average Forward Current 16A@ T C = 134 °C, (Rated V R )I FSMNon-Repetitive Peak Surge Current18005μs Sine or 3μs Rect. pulse Surge applied at rated load condition halfwave single phase 60HzE AS Non-Repetitive A valanche E nergy 24mJ T J = 25 °C, I AS = 3.6 Amps, L = 3.7 mHI ARRepetitive A valanche C urrent3.6ACurrent decaying linearly to zero in 1 μsecFrequency limited by T J max. V A = 1.5 x V R typicalAbsolute Maximum RatingsParametersMBR16..UnitsConditionsA150Part numberMBRB1635PbF MBRB1645PbFV RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)3545Voltage RatingsThermal-Mechanical SpecificationsParametersMBR16..UnitsConditionsKg-cm (Ibf-in)T J Max. Junction Temperature Range -65 to 150°C T stgMax. Storage Temperature Range-65 to 175°CR thJC Max. Thermal Resistance Junction1.50°C/W DC o perationto Case R thCS Typical Thermal Resistance, Case0.50°C/W Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07)g (oz.)TMounting T orque Min. 6 (5)Max.12 (10)Marking DeviceMBRB16..Case style D 2PakV FM Max. Forward Voltage Drop(1)0.63V @ 16A 0.57V @ 16A I RM Max. Instantaneus Reverse Current0.2mA T J = 25 °C (1)40mA T J = 125 °CC T Max. Junction Capacitance 1400pF V R = 5V DC (test signal range 100Khz to 1Mhz) 25°C L STypical Series Inductance8.0nH Measured from top of terminal to mounting planedv/dt Max. Voltage Rate of Change10000V/ μs(Rated V R )Electrical SpecificationsParametersMBR16..UnitsConditionsT J = 25 °C Rated DC voltage(1) Pulse Width < 300μs, Duty Cycle <2%T J = 125 °C Following any rated loadcondition and with ratedV RRM appliedMBRB16..PbF SeriesMBRB16..PbF SeriesOutline TableBulletin PD-21044 rev. A 06/067 MBRB16..PbF SeriesIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 06/06Data and specifications subject to change without notice.This product has been designed and qualified for Industrial Level and Lead-Free.Qualification Standards can be found on IR's Web site.。

Features•Floating channel designed for bootstrap operationFully operational to 200VTolerant to negative transient voltage, dV/dt immune •Gate drive supply range from 10 to 20V •Undervoltage lockout for both channels •3.3V logic compatibleSeparate logic supply range from 3.3V to 20V Logic and power ground ±5V offset•CMOS Schmitt-triggered inputs with pull-down •Shut down input turns off both channels•Matched propagation delay for both channels •Outputs in phase with inputsHIGH AND LOW SIDE DRIVERProduct SummaryV OFFSET 200V max.I O +/- 3.0A / 3.0A typ.V OUT 10 - 20V t on/off 95 & 65 ns typ.Delay Matching15 ns max.IR2010 (S ) 1Data Sheet No. PD60195-AApplications查询IR2010 (S)供应商IR2010 (S)Note 1: Logic operational for V S of -4 to +200V. Logic state held for V S of -4V to -V BS .Note 2: When V DD < 5V , the minimum V SS offset is limited to -V DD.Recommended Operating ConditionsThe input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15V differential. Typical Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.(Please refer to the Design Tip DT97-3 for more details). 3IR2010 (S)Dynamic Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15V, C L = 1000 pF, T A = 25°C and V SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.Static Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15V , T A = 25°C and V SS = COM unless otherwise specified. The V IN , V TH and I IN parameters are referenced to V SS and are applicable to all three logic input leads: HIN, LIN and SD. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.4IR2010 (S)Lead DefinitionsSymbol Description14 Lead PDIP 16 Lead SOIC (Wide Body)IR2010IR2010S V DD Logic supplyHIN Logic input for high side gate driver output (HO), in phase SD Logic input for shutdownLIN Logic input for low side gate driver output (LO), in phase V SS Logic groundV B High side floating supply HO High side gate drive output V S High side floating supply return V CC Low side supplyLO Low side gate drive output COMLow side return 5IR2010 (S)Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test CircuitFigure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform DefinitionFigure 6. Delay Matching Waveform DefinitionsFigure 5. Shutdown Waveform Definitions(0 to 200V)HIN LINSDHO LOHV =10 to 200V<50 V/nsIR2010 (S) 7IR2010 (S)IR2010 (S) 9IR2010 (S)IR2010 (S) 11IR2010 (S)Figure 22. V BS Undervoltage (+) vs. TemperatureFigure 23. V BS Undervoltage (-) vs. TemperatureFigure 24. V CC Undervoltage (+) vs. Temperature6.07.08.09.010.011.0-50-25255075100125Temperature (°C)V B S U n d e r v o l t a g e L o c k o u t + (V )6.07.08.09.010.011.0-50-25255075100125Temperature (°C)V B S U n d e r v o l t a g e L o c k o u t - (V )6.07.08.09.010.011.0-50-25255075100125Temperature (°C)V C C U n d e r v o l t a g e L o c k o u t + (V )IR2010 (S)-50-25255075100125Temperature (°C)V C C U n d e r v o l t a g e L o c k o u t - (V )Figure 25. V CC Undervoltage (-) vs. TemperatureIR2010 (S)IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105Data and specifications subject to change without notice. 1/30/2002。

MicroNoteSeries 302by Kent Walters, Corporate Applications EngineerRectifier Reverse Switching PerformanceBasic rectifier diode features were described in MicroNote 301.These included average forward current I O , working peak reverse voltage V RWM , reverse current I R ,breakdown voltage V (BR), forward voltage V F , forward current I F , and forward surge current I FSM . For many low frequency applications,these parameters are adequate in selecting rectifiers.As switching speeds or frequency of operation increase well beyond 400 Hz, rectifiers can become inefficient or notably handicapped to a variety of applications unless designed and selected with added performance features. This is most often given in terms of reverse recovery time t rr . Applications may include switched mode power supplies or others requiring high speed rectifier response. In these examples, rectifiers are often expected to respond as idealswitches or “one-way-current-flow valves” to meet functional circuit requirements when subjected to forward and reverse voltage environments. High speedrectifiers best approach this ideal by minimizing switching energy losses and heat that can otherwise be generated in other circuit components and in switching rectifiers themselves. In other applications needing fastresponding “catch” diodes, they also serve as protective voltage clamps in parallel to sensitive components such as MOSFETs and IGBTs. In such applications,good forward recoverycharacteristics in t fr and V FRM may also be needed.The industry generally identifies a rectifier as “fast” if it is rated with reverse recovery of 500 ns or less (≈ 1/10 that of standard rectifiers).If further improved to 100 ns or less, it is often termed “ultrafast”.Low current small signal diodes with 10-100 volt V RWM are in the t rr range of 0.75 to 5 ns. Medium to high current ultrafast rectifiers are available in a range of 15 to 60 ns as voltage rating is increased from 50 to 800 volt V RWM operation.Rectifiers with voltages of 1000 to 1500 volts are also available in the range of 100 ns.The reverse recovery time of a rectifier can best be understood by viewing the rate of decreasing current in the forward conducting direction and how quickly thereafter it effectively stops current flow. When switched in this manner, the typical current flow and voltage response of arectifier is shown in Figure 1.When forward current is switched or ramped down at some high rate of di/dt to zero in Figure 1, current flow does not simply come to an ideal stop. Instead the current briefly reverses its flow andcontinues until a peak overshoot occurs. It will then diminishthereafter to near zero (I R ). During the brief reverse current flow, the anticipated high reverse blocking voltage across the rectifier does not start appearing until thereverse current peak occurs. This delay can also significantly affect the switching energy in othercomponents that must still support voltage when rectifier current is reversed.As in most semiconductorcomponents, voltage response is current driven . In rectifiers,voltage versus time is dependent on how long it takes for stored charge in forward current injected minority carriers near the pn junction to be swept out or recovered as current flow isreversed. In Figure 1, this process eventually peaks in charge removal rate or the peak reverse recovery current I RM(REC) before a depletion region forms and the rectifierbegins supporting reverse voltage.Only after this peak occurs will reverse current diminish in the latter portion of switching. The overall time these semiconductor events occur to switch off current flow in the rectifier is represented by reverse recovery time t rr .In lower current applications, the reverse current overshoot forcharge recovery is often limited by the circuit or test method used rather than the diode itself. When test limited in this manner, it is then simply identified as reversecurrent I RM as shown in Figure 2.This is an important distinction from I RM(REC) since I RM is not a diode dependent feature.In either case, recovered charge Q RR may be approximated by area under the reverse current-time curve. This Q RR also represents energy that must be dissipated with reverse voltage in the power switching side of the circuit. In Figure 1 where it appears triangular and the apex is atI RM(REC), recovered charge Q RR can be approximated by the expression:Q RR ∼ (1/2) t rr I RM(REC)When I RM is limited by application or test circuit, it will extend t rrsomewhat to recover the charge Q RR . It is also apparent that high forward operating currents (I O )injecting greater stored charge willSeries 302require longer reverse recovery time to switch. If I O and V Fconduction losses result in higher operating temperature , this will also effectively increase t rr ,I RM(REC), and switching losses .Both suggest rectifiers should be conservatively chosen in I O ratings versus application including any noted I F difference in t rr test characterization.The reverse recovery time t rr is comprised of two time intervals t a and t b when rectifiers respond with their own peak reverse recovery current I RM(REC) as shown in Figure 1. The t a begins at the moment forward current has been ramped down from I F where it intersects the zero current axis, and concludes atthe rectifier I RM(REC) peak response point.This t a region is primarily dictated by rectifier component design in how quickly the I RM(REC) peak can be achieved with minority carrier lifetime control. During this t aportion of switching, other circuit components may be subjected to fast rise time voltage-current where the rectifier has not yet begun to support reverse voltage.As switching rates (di/dt)increase, these other components must absorb corresponding greater switching energy and heating. As operating frequency increases, this can be excessive at high duty factors.The latter part of reverse recovery time is t b . It begins at I RM(REC)peak and ends where reverse currentdecays to a specified level (see Figure 1). In low to medium current “soft recovery” rectifiers, it is often where i R diminishes to 10-25% of the specified peak I RM test value. On higher rated current rectifiers, reverse recovery may also be specified to end at an intercept point on the zero-current axis after drawing a straight line from the I RM(REC) point to 0.25I RM(REC) on the recovery curve. This line is then extended to thetermination point on the zero-axis.For rectifiers with “abrupt recovery”or oscillatory ring-off , it is where reverse current again crosses the zero axis. These examples are in Figure 3.The t b region in reverse recovery is influenced by rectifier design and circuit interaction . It is thisswitching region where the rectifier is now supporting significant reverse voltage while reversecurrent is still diminishing. During this brief time, voltage and reverse current switching energy are now primarily absorbed by the rectifier.This can also generate notable rectifier heating if t b is excessively long, particularly if repeated at high frequency.From the combined effects of both t a and t b for reverse recovery time,it is apparent that minimal values of t rr are needed to reduce switching energy stresses to othercomponents as well as the rectifier diode itself in higher speed applications. Since t b (and I RM )are also influenced by the circuit, it is important to specify testrequirements for t rr that reasonably approximate actual operating conditions including forward current, di/dt, and temperature.The latest industry standards for measuring reverse recovery time are found in JEDEC Standard JESD41 which is virtually identicalSeries 302to MIL-STD-750, Method 4031.Each has four different test conditions of various productoperating ranges in forward current,di/dt, and t rr . This includes test criteria for small signal diodes on up to large power rectifiers.The classification of soft and abrupt recovery rectifiers isanother reverse recovery feature that can be important in many applications. It has previously been identified in the industry as Recovery Softness Factor where RSF = t b /t a . The higher the value in RSF, the softer the recovery.This is observed where reverse current decreases more slowly and smoothly in the t b region to itssteady state value (I R ) compared to the initial t a region. In contrast,abrupt rectifiers exhibit a reverse current waveform that quickly cross the zero axis and oftenoscillate or ring off as in Figure 3.This can also result in excessive rf noise.Newer JEDEC and international IEC standards will soon be recognizing soft and abrupt features with Reverse Recovery Softness Factor RRSF which is defined as the absolute value in ratio of di/dt slope in the t a region divided by greatest magnitude of di/dt slope in the t b region. Reasons for this become apparent when considering practical applications.If the t b region is very short and abrupt, the effect of rapid current change with other circuit loopinductance can produce undesired transient voltages. If this Ldi/dt effect in the t b region is high compared to the t a region, it can result in an undesired reverse voltage peak that meets orexceeds the “buss line” voltage V RSoft RecoveryAbrupt Recoveryt pt p。

MBR0520LT1G,SBR80520LT1G,MBR0520LT3G,SBR80520LT3GPreferred DevicesSurface MountSchottky Power Rectifier Plastic SOD−123 PackageThe Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state−of−the−art devices have the following features:Features∙Guardring for Stress Protection∙Very Low Forward V oltage(*************,25︒C)∙125︒C Operating Junction Temperature∙Epoxy Meets UL 94 V−*********∙Package Designed for Optimal Automated Board Assembly∙AEC−Q101 Qualified and PPAP Capable∙SBR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements∙All Packages are Pb−Free*Mechanical Characteristics∙Polarity Designator: Cathode Band∙Weight: 11.7 mg (approximately)∙Case: Epoxy, Molded∙Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable∙Lead and Mounting Surface Temperature for Soldering Purposes: 260︒C Max. for 10 Seconds∙ESD Ratings:♦Human Body Model = 3B♦Machine Model = C*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.B2= Device CodeM= Date CodeG= Pb−Free PackageSCHOTTKY BARRIERRECTIFIER0.5 AMPERES, 20 VOLTSSOD−123CASE 425STYLE 1MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONMBR0520LT1G SOD−123(Pb−Free)3,000 /Tape & Reel **MBR0520LT3G SOD−123(Pb−Free)10,000 /Tape & Reel ***†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.Preferred devices are recommended choices for future use and best overall value.(Note: Microdot may be in either location)SBR80520LT1G SOD−123(Pb−Free)3,000 /Tape & Reel **SBR80520LT3G SOD−123(Pb−Free)10,000 /Tape & Reel *** **8 mm Tape, 7” Reel***8 mm Tape, 13” Reel1MAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R20VAverage Rectified Forward Current (Rated V R, T L = 90︒C)I F(AV)0.5ANon−Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM5.5AStorage Temperature Range T stg−65 to +150︒C Operating Junction Temperature T J−65 to +125︒C Voltage Rate of Change (Rated V R)dv/dt1000V/m sESD Ratings:Machine Model = C Human Body Model = 3B > 400> 8000VStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.THERMAL CHARACTERISTICSCharacteristic Symbol Value Unit Thermal Resistance; Junction−to−Ambient (Note 1)R q JA206︒C/W Thermal Resistance; Junction−to−Lead R q JL150︒C/W1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.ELECTRICAL CHARACTERISTICSCharacteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2)v F T J = 25︒C T J = 100︒C V(i F = 0.1 Amps) (i F = 0.5 Amps)0.3000.3850.2200.330Maximum Instantaneous Reverse Current (Note 2)I R T J = 25︒C T J = 100︒C mA(V R = 10 V)(Rated DC Voltage = 20 V)75 m A250 m A5 mA8 mA2.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤ 2%.I R , R E V E R S E C U R R E N T ( A )μ10.10.01i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )v F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)Figure 1. Typical Forward Voltage V R , REVERSE VOLTAGE (VOLTS)Figure 2. Typical Reverse Current200V R , REVERSE VOLTAGE (VOLTS)Figure 3. Typical Capacitance 5101520251501000C , C A P A C I T A N C E (p F )50V R , REVERSE VOLTAGE (VOLTS)Figure 4. Typical Reverse CurrentI R , R E V E R S E C U R R E N T ( A )μ10.8750LEAD TEMPERATURE (︒C)Figure 5. Current Derating (Lead)0.750.6250.50.1250.250.375A V E R A G E F O R W A R D C U R R E N T (A M P )I F(AV), AVERAGE FORWARD CURRENT (AMP)Figure 6. Power DissipationP F (A V ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T )PACKAGE DIMENSIONSSOD−123CASE 425−04ISSUE GNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.DIM MIN NOM MAXMILLIMETERS INCHESA0.94 1.17 1.350.037A10.000.050.100.000b0.510.610.710.020c1.600.150.055D 1.40 1.80E 2.54 2.69 2.840.100---3.680.140L0.253.860.0100.0460.0020.0240.0630.1060.1450.0530.0040.0280.0710.1120.152MIN NOM MAX3.56H E---------0.006------------*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*STYLE 1:PIN 1. CATHODE2. ANODE0.910.036ǒmminchesǓSCALE 10:1------q001010︒︒︒︒。

关键词噪声系数、噪声温度、超噪比、Y 系数法、冷热负载法概述：针对手机等接收机整机噪声系数测试问题，该文章提出两种简单实用的方法，并分别讨论其优缺点，一种方法是用单独频谱仪进行测试，精度较低；另一种方法是借助噪声测试仪的噪声源来测试，利用冷热负载测试噪声系数的原理，能够得到比较精确的测量结果。

Abstract ：Often we face to test noise figure of a receiver with RF input and I/Q analogue output, normal noise figure instrument is not adequate for the limited frequency range, here we introduce two methods, one is to use spectrum analyzer, another method is to use standard noise source, and use Y-coefficient method to calculate the noise figure. 问题提出下图是MAXIM 公司TD-SCDMA 手机射频单元参考设计的接收电路，该通道电压增益大于100dB ，与基带单元接口为模拟I/Q 信号，我们需要测量该通道的噪声系数。

我们现有的噪声测试仪表是HP8970B ，该仪表所能测量的最低频率为10MHz ，而TD-SCDMA 基带I/Q 信号最高有用频率成份为640KHz ，显然该仪表不能满足我们的测量需求。

AFCRxI+RxI-CLK DATA ENRX RxQ+RxQ-RxAGCVBA GND3~3.6VdcLH46B Matching图1：MAXIM 公司TD-SCDMA 手机射频接收电路下面我们将介绍两种测试方案，并讨论其测试精度，最后给出实际测试数据以做对比。