Endurance Enhancement of Flash-Memory Storage Systems An Efficient Static Wear Leveling Des

AAbrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum（Aluminium）铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic （AS）砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发BBackground carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCan 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish （CMP）化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio （CMRR）共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（CMOS）互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design （CAD）/test（CAT）/manufacture（CAM）计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底）Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）DDangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel （dB）分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade）/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS（DMOS）双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗EEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation（ship）爱因斯坦关系Electric Erase Programmable Read Only Memory（E2PROM）一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E-K）图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic （低）共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM （EPROM）可搽取（编程）存储器Error function complement （erfc）余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体FFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数GGain 增益Gallium-Arsenide（GaAs）砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium（Ge）锗Graded 缓变的Graded （gradual）channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应HHardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.（H-MOS）高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成IImage - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide （ITO）铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性JJunction FET（JFET）结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED）发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型MMajority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure （MTBF）平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor（MOST ）MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module（MCM）多芯片模块Multiplication coefficient倍增因子NNaked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析OOccupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化PPackage 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺（photo）resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential （电）势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board（PCB）印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator（PWM）脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi－level准费米能级Quartz 石英RRadiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置SSampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4）氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat（PT）热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关TTailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor（TFT）薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging（stress）晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel（ing）隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关VVacancy 空位Vacuum 真空Valence（value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。

The Effects of Caffeine – An Ergogenic Aid咖啡因的效用-一种兴奋剂目的1.理解咖啡因的背景信息2.理解咖啡因相关生理学3.回顾摄取咖啡因的益处和副作用介绍咖啡因是一种比较温和的刺激物，可以在63种植物种类中提取。

咖啡因可以在这些植物的叶子，茎，种子和根当中找到。

也可以在咖啡豆，茶叶，巧克力，可可豆和可乐树果实中找到，并且经常作为汽水的添加剂。

也可以在处方药，利尿剂和止痛剂中找到咖啡因。

咖啡因咖啡因2004年1月1日从国际奥林比克委员会（IOC）列出的违禁药物名单中撤出。

在2004年一月之前，咖啡因是IOC列出允许极限的混合物中的一种。

限额为，尿液中的咖啡因浓度为12μg/ ml。

因为咖啡因可以影响运动表现，所以在竞技体育届中使用与否一直都存在争议。

咖啡因容易被吸收。

摄入后，血液中的含量上升，大约60分钟后达到顶峰。

报告指出，在2小时到10小时达到一半。

咖啡因首先在肝中降解，然后从尿液排出。

咖啡因的基本生理效应A.Neuro-physiology神经生理学咖啡因主要用于刺激中枢神经系统（CNS）。

咖啡因可以对中枢神经（如延髓和大脑皮质）产生很高的刺激，甚至可以大量到达脊髓。

咖啡因可以使大脑皮质分析过程更为清晰，同时可以防止身体疲劳。

可以使人很好的集中注意力１－３小时。

咖啡因被证实可以通过减慢停止神经元放电物质从而刺激中枢神经系统，从而可以快速反应提高注意力。

在竞技体育中，必须具备迅速思考和作出判断的能力，咖啡因可以帮助提高这种能力。

另一方面，咖啡因可以提高肌肉收缩力量。

通过传递钙、钠和钾到细胞中，细胞膜的渗透性增加，所以可以大大提高肌肉收缩。

B.Cardiovascular System心血管系统咖啡因可以通过影响中枢神经系统和周边神经系统的神经传递而直接改变心脏和血管的收缩从而影响心血管系统的功能。

对于不习惯喝咖啡的人，咖啡因会引起小幅度血压上升，而一般在3-4小时后回到以前的水平。

General DescriptionThe Micron Parallel NOR Flash memory is the latest generation of Flash memory devi-ces. Benefits include more density in less space, high-speed interface device, and sup-port for code and data storage. Features include high-performance synchronous-burstread mode, fast asynchronous access times, low power, flexible security options, andthree industry-standard package choices. The product family is manufactured using Mi-cron 65nm process technology.The NOR Flash device provides high performance at low voltage on a 16-bit data bus.Individually erasable memory blocks are sized for optimum code and data storage.Upon initial power up or return from reset, the device defaults to asynchronous page-mode read. Configuring the read configuration register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-sup-plied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.In addition to the enhanced architecture and interface, the device incorporates technol-ogy that enables fast factory PROGRAM and ERASE operations. Designed for low-volt-age systems, the devIce supports READ operations with V CC at the low voltages, andERASE and PROGRAM operations with V PP at the low voltages or V PPH. Buffered en-hanced factory programming (BEFP) provides the fastest Flash array programming per-formance with V PP at V PPH, which increases factory throughput. With V PP at low voltag-es, V CC and V PP can be tied together for a simple, ultra low-power design. In addition tovoltage flexibility, a dedicated V PP connection provides complete data protection whenV PP≤ V PPLK.A command user interface is the interface between the system processor and all inter-nal operations of the device. The device automatically executes the algorithms and tim-ings necessary for block erase and program. A status register indicates ERASE or PRO-GRAM completion and any errors that may have occurred.An industry-standard command sequence invokes program and erase automation.Each ERASE operation erases one block. The erase suspend feature enables system soft-ware to pause an ERASE cycle to read or program data in another block. Program sus-pend enables system software to pause programming to read other locations. Data isprogrammed in word increments (16 bits).The protection register enables unique device identification that can be used to in-crease system security. The individual block lock feature provides zero-latency blocklocking and unlocking. The device includes enhanced protection via password access;this new feature supports write and/or read access protection of user-defined blocks. Inaddition, the device also provides the full-device OTP security feature.Virtual Chip Enable DescriptionThe 512Mb device employs a virtual chip enable feature, which combines two 256Mbdie with a common chip enable, F1-CE# for QUAD+ packages, or CE# for Easy BGApackages. The maximum address bit is then used to select between the die pair with F1-CE#/CE# asserted, depending upon the package option used. When F1-CE#/CE# is as-serted and the maximum address bit is LOW, the lower parameter die is selected; whenF1-CE#/CE# is asserted and the maximum address bit is HIGH, the upper parameter dieis selected.Table 26: Block Region Map Information (Continued)Table 32: Partition Region 1 Information: Top and Bottom Offset/AddressTable 33: Partition Region 1 InformationTable 35: CFI Link InformationNote: 1.See Additional CFI Link Field table. Table 36: Additional CFI Link FieldFlowchartsFigure 17: Word Program Procedure256Mb and 512Mb (256Mb/256Mb), P30-65nmFlowcharts。

半导体一些术语的中英文对照离子注入机ionimplanterLSS理论LindhandScharffandSchiotttheory 又称“林汉德-斯卡夫-斯高特理论”。

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Intel P3700 NVMe Enterprise Performance Flash AdapterProduct Guide (withdrawn product)The Intel P3700 NVMe Enterprise Performance Flash Adapters are a new family of PCIe Flash Storage Adapters that provides high performance data transfers from storage, at rates significantly faster than SAS or SATA-based SSDs.The Intel P3700 NVMe Enterprise Performance Flash Adapter devices are based on Intel-developed controller, firmware, and leading manufacturing process NAND flash memory. Rigorous qualification and compatibility testing by Lenovo ensures a highly reliable flash adapter. By combining Flash NAND management techniques and NAND silicon enhancements, High Endurance Technology (HET) enables the P3700 Series to achieve up to 17 drive writes per day over a 5 year drive life.The adapter is shown in the following figure.Figure 1. Intel P3700 NVMe Enterprise Performance Flash AdapterDid You Know?NVMe (Non-Volatile Memory Express) is a technology that overcomes SAS/SATA SSD performance limitations by optimizing hardware and software to take full advantage of flash technology. Intel Xeon processors efficiently transfer data in fewer clock cycles with the NVMe optimized software stack compared to the legacy Advance Host Controller Interface (AHCI) stack, thereby reducing latency and overhead. These adapters connect directly to the processor via the PCIe bus, further reducing latency and TCO.Click here to check for updatesTechnical specificationsThe following table lists the technical specifications for the Intel P3700 NVMe Enterprise Performance Flash Adapters.Table 3. Technical specificationsSpecification800 GB adapter 1.6 TB adapter 2.0 TB adapterPart number01GT7114XC0G8886100YA81200YA815Interface PCIe 3.0 x4PCIe 3.0 x4PCIe 3.0 x4Form factor Half height, half length Half height, half length Half height, half length Capacity800 GB 1.6 TB 2.0 TBEndurance14.6 PB TBW10 DWPD 43.8 PB TBW15 DWPD62.05 PB TBW17 DWPDRandom read IOPS (4 KB blocks)460,000 (90% consistent)450,000 (90% consistent)450,000 (90% consistent) Random write IOPS (4 KBblocks)90,000 (90% consistent)150,000 (90% consistent)175,000 (90% consistent) Sequential read throughput 2.8 GBps 2.8 GBps 2.8 GBpsSequential write throughput 1.9 GBps 1.9 GBps 1.9 GBpsRead access latency sequential*20 µs20 µs20 µsRead access latency random*115 µs115 µs115 µsWrite access latency sequential*20 µs20 µs20 µsWrite access latency random*25 µs25 µs25 µsPower requirements25 W25 W25 W* Latency measured using 4 KB transfer size with queue depth = 1 on a sequential workload using Windows Server 2012 R2 drivers. Power mode set at 25W.Enterprise Performance solid-state devices have read and write IOPS and throughput performance that are comparable to Enterprise Mainstream devices, but the key difference between them is their endurance (or lifetime); that is, how long they can perform write operations because solid-state devices have a finite number of program/erase (P/E) cycles.Enterprise Performance PCIe Flash Adapters have better endurance and higher IOPS/GB ratio but also a higher cost/IOPS ratio compared to Enterprise Mainstream PCIe Flash adapters. Because of this fact, the Enterprise Performance PCIe Flash Adapters are targeted for mixed read- and write-intensive workloads, and the Enterprise Mainstream PCIe Flash Adapters are targeted for read-intensive workloads. Solid-state device write endurance often is measured by the number of P/E cycles that the drive incurs over its lifetime, which is listed as the total bytes of written (TBW) data in the device specification.The TBW value that is assigned to a solid-state device is the total bytes of written data (based on the number of P/E cycles) that a device can be guaranteed to complete (the percentage of remaining P/E cycles is equal to the percentage of remaining TBW). The Lenovo warranty for the solid-state storage is limited to devices that have not reached the maximum guaranteed number of program/erase cycles. Solid-state storage that reaches this limit might fail to operate according to its specifications. Because of such behavior by solid-state devices, careful planning must be done to use solid-state storage in the application environments to ensure that the TBW of the device is not exceeded before the end of the required life expectancy.Server support - System xThe following tables list the server compatibility information for the adapters on System x servers.Support for System x and dense servers with Xeon E5/E7 v4 and E3 v5 processors Table 4. Support for System x and dense servers with Xeon E5/E7 v4 and E3 v5 processorsPart numberDescription01GT711Intel P3700 800GB NVMe Enterprise Performance Flash Adapter N N Y Y Y N N 00YA812Intel P3700 1.6TB NVMe Enterprise Performance Flash Adapter N N Y Y Y N N 00YA815Intel P3700 2.0TB NVMe Enterprise Performance Flash AdapterNNYYYN NSupport for System x and dense servers with Intel Xeon v3 processors Table 5. Support for System x servers with Intel Xeon v3 processorsPart number Description01GT711Intel P3700 800GB NVMe Enterprise Performance Flash Adapter N N N N N N N 00YA812Intel P3700 1.6TB NVMe Enterprise Performance Flash Adapter N N N Y Y Y N 00YA815Intel P3700 2.0TB NVMe Enterprise Performance Flash AdapterNNNYYYN x 3250 M 6 (3943)x 3250 M 6 (3633)x 3550 M 5 (8869)x 3650 M 5 (8871)x 3850 X 6/x 3950 X 6 (6241, E 7 v 4)n x 360 M 5 (5465, E 5-2600 v 4)s d 350 (5493)x 3100 M 5 (5457)x 3250 M 5 (5458)x 3500 M 5 (5464)x 3550 M 5 (5463)x 3650 M 5 (5462)x 3850 X 6/x 3950 X 6 (6241, E 7 v 3)n x 360 M 5 (5465)Support for System x servers with Intel Xeon v2 processors Table 6. Support for System x servers with Intel Xeon v2 processorsPart numberDescription01GT711Intel P3700 800GB NVMe EnterprisePerformance Flash Adapter N N N N N N N N N N N N N 00YA812Intel P3700 1.6TB NVMe EnterprisePerformance Flash Adapter N N N N N N N N N N Y N N 00YA815Intel P3700 2.0TB NVMe EnterprisePerformance Flash AdapterNNNNNNNNNNYN NSupport for Flex System compute nodesThe adapters are supported in the following Flex System compute nodes when installed in an attached PCIe Expansion Node.Table 7. Support for Flex System serversPart numberDescription01GT711Intel P3700 800GB NVMe Enterprise PerformanceFlash Adapter N N N N N N N N N N 00YA812Intel P3700 1.6TB NVMe Enterprise Performance FlashAdapter N N N N N Y†N N N N 00YA815Intel P3700 2.0TB NVMe Enterprise Performance FlashAdapterNNNNNY†NNNN † Supported when installed in an attached PCIe Expansion NodeServer support - ThinkServerx 3500 M 4 (7383, E 5-2600 v 2)x 3530 M 4 (7160, E 5-2400 v 2)x 3550 M 4 (7914, E 5-2600 v 2)x 3630 M 4 (7158, E 5-2400 v 2)x 3650 M 4 (7915, E 5-2600 v 2)x 3650 M 4 B D (5466)x 3650 M 4 H D (5460)x 3750 M 4 (8752)x 3750 M 4 (8753)x 3850 X 6/x 3950 X 6 (3837)x 3850 X 6/x 3950 X 6 (6241, E 7 v 2)d x 360 M 4 (E 5-2600 v 2)n x 360 M 4 (5455)x 220 (7906)x 222 (7916)x 240 (8737, E 5-2600)x 240 (8737, E 5-2600 v 2)x 240 (7162)x 240 M 5 (9532, v 3 & v 4)x 440 (7917)x 440 (7167)x 880/x 480/x 280 X 6 (7903)x 280/x 480/x 880 X 6 (7196)Table 10. Operating system support for Intel P3700 800GB NVMe Enterprise Performance Flash Adapter,01GT711Operating systemsMicrosoft Windows Server 2012 R2Y N Y Y Microsoft Windows Server 2016Y Y Y Y Microsoft Windows Server 2019Y Y Y Y Microsoft Windows Server version 1709Y Y Y Y Microsoft Windows Server version 1803N Y Y N Red Hat Enterprise Linux 6 Server x64 Edition Y Y Y Y Red Hat Enterprise Linux 7Y Y Y Y Red Hat Enterprise Linux 8.0Y N N N SUSE Linux Enterprise Server 11 for AMD64/EM64T Y Y Y Y SUSE Linux Enterprise Server 12Y Y Y Y SUSE Linux Enterprise Server 15Y Y Y Y VMware vSphere Hypervisor (ESXi) 6.0Y Y Y Y VMware vSphere Hypervisor (ESXi) 6.5Y Y Y Y VMware vSphere Hypervisor (ESXi) 6.7Y Y Y Yx 3850/3950 X 6 (6241, E 7 v 4)x 3550 M 5 (8869)x 3650 M 5 (8871)x 240 M 5 (9532)00YA812Operating systemsMicrosoft Windows Server 2008 R2Y N Y Y Y N N Microsoft Windows Server 2012Y Y Y N Y N Y Microsoft Windows Server 2012 R2Y Y Y Y Y Y Y Microsoft Windows Server 2016Y Y Y N Y Y Y Microsoft Windows Server version 1709Y Y Y Y Y Y Y Red Hat Enterprise Linux 6 Server x64 Edition Y Y Y N Y N Y Red Hat Enterprise Linux 7Y Y Y Y Y Y Y SUSE Linux Enterprise Server 11 for AMD64/EM64TY Y Y N Y N Y SUSE Linux Enterprise Server 11 with Xen for AMD64/EM64T Y Y Y N Y N Y SUSE Linux Enterprise Server 12Y Y Y Y Y Y Y SUSE Linux Enterprise Server 12 with Xen Y Y Y Y Y Y Y VMware vSphere Hypervisor (ESXi) 5.5Y N Y N Y N Y VMware vSphere Hypervisor (ESXi) 6.0Y Y Y Y Y YY Support Haswell only[VMware 5.5 up 3 does not support NVMe as boot drive. Tested as data drive.]x 3850/3950 X 6 (6241, E 7 v 3)x 3850/3950 X 6 (6241, E 7 v 4)x 3550 M 5 (5463)x 3550 M 5 (8869)x 3650 M 5 (5462)x 3650 M 5 (8871)x 240 M 5 (9532)111111111, 2112TrademarksLenovo and the Lenovo logo are trademarks or registered trademarks of Lenovo in the United States, other countries, or both. A current list of Lenovo trademarks is available on the Web athttps:///us/en/legal/copytrade/.The following terms are trademarks of Lenovo in the United States, other countries, or both:Lenovo®Flex SystemServerProven®System x®ThinkServer®The following terms are trademarks of other companies:Intel® and Xeon® are trademarks of Intel Corporation or its subsidiaries.Linux® is the trademark of Linus Torvalds in the U.S. and other countries.Microsoft®, Windows Server®, and Windows® are trademarks of Microsoft Corporation in the United States, other countries, or both.Other company, product, or service names may be trademarks or service marks of others.。

微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的；Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的，非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki]（截止，阻塞） band 阻挡能带Blocking contact 阻挡接触 Body（身体，主题） - centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower（追随者）自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联，串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷（的） Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl]（磨光）化学抛光Chemmically-Mechanically [m'knkl]（机械地）Polish (CMP) 化学机械抛光 Chip 芯片Chip yield（产量）芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane（平面）解理面Clock rate（比率）时钟频率 Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器 Close-packed structure（构造）密堆积结构Close-loop（环） gain（获利，增加）闭环增益 Collector 集电极Collision[k'l()n]（冲突）碰撞 Compensated（补偿） OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities（杂质）补偿杂质 Compensated semiconductor 补偿半导体Complementary（补足的） Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration（配置）组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants（常量，常数）物理常数Constant energy surface 等能面 Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt]（converter转变，转换）转换器 Conveyer[kn've]传输器Copper（铜） interconnection[,ntk'nkn]（互联） system 铜互连系统 Couping 耦合Covalent[k'vel()nt]（共价的）共阶的 Crossover 跨交Critical （批评的）临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度 Curvature'kvt曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样 Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体 J）Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数 dice） Diode 二极管Dielectric 介电的 Dielectric isolation（隔离。

Flash Memory分类及使用方法一、引言在数字化时代，我们所使用的各种电子设备中，都离不开存储设备，其中一种常见的存储设备就是Flash Memory。

Flash Memory因其高速读写、便携性和高存储密度而备受青睐，广泛应用于闪存卡、固态硬盘、移动设备等领域。

本文将对Flash Memory进行全面评估，并探讨其分类和使用方法，以便读者能全面、深刻、灵活地理解这一主题。

二、Flash Memory分类1. 按照存储介质分类Flash Memory根据其存储介质不同可分为两类：NAND Flash和NOR Flash。

NAND Flash主要用于大容量数据存储，如固态硬盘；而NOR Flash则用于小容量数据存储，如闪存卡。

2. 按照接口分类根据接口的不同，Flash Memory可分为SATA接口、PCIe接口和USB接口。

其中，SATA接口适用于固态硬盘，PCIe接口适用于高性能存储设备，USB接口适用于便携性较强的闪存盘和移动设备。

3. 按照存储类型分类根据存储类型的不同，Flash Memory可分为SLC（Single-LevelCell）、MLC（Multi-Level Cell）和TLC（Triple-Level Cell）。

SLC 存储密度低，但读写速度快，寿命长；MLC存储密度中等，价格适中；TLC存储密度高，价格低廉，但寿命相对较短。

三、Flash Memory的使用方法1. 选择适合的存储介质根据实际需求，选择NAND Flash或NOR Flash，以满足不同的存储需求。

2. 根据设备接口选择Flash Memory在选购Flash Memory时，要根据设备的接口来选购，确保Flash Memory能够与设备兼容并发挥最佳性能。

3. 注意数据传输速度和读写次数在使用过程中，要注意Flash Memory的数据传输速度和读写次数，避免因频繁读写导致存储器老化。

4. 合理使用存储空间在使用Flash Memory时，要合理利用存储空间，避免存储碎片和浪费存储资源。

半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌欢迎您的下载，资料仅供参考！致力为企业和个人提供合同协议，策划案计划书，学习资料等等打造全网一站式需求。

AAbrupt junction 突变结 Accelerated testing 加速实验Acceptor 受主 Acceptor atom 受主原子Accumulation 积累、堆积 Accumulating contact 积累接触Accumulation region 积累区 Accumulation layer 积累层Active region 有源区 Active component 有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance 导纳 Allowed band 允带Alloy-junction device合金结器件 Aluminum（Aluminium）铝Aluminum - oxide 铝氧化物 Aluminum passivation 铝钝化Ambipolar 双极的 Ambient temperature 环境温度Amorphous 无定形的，非晶体的 Amplifier 功放扩音器放大器Analogue（Analog） comparator 模拟比较器 Angstrom 埃Anneal 退火 Anisotropic 各向异性的Anode 阳极 Arsenic （AS）砷Auger 俄歇 Auger process 俄歇过程Avalanche 雪崩 Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发BBackground carrier 本底载流子 Background doping 本底掺杂Backward 反向 Backward bias 反向偏置Ballasting resistor 整流电阻 Ball bond 球形键合Band 能带 Band gap 能带间隙Barrier 势垒 Barrier layer 势垒层Barrier width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit time 基区渡越时间 Base transport efficiency基区输运系数Base-width modulation基区宽度调制 Basis vector 基矢Bias 偏置 Bilateral switch 双向开关Binary code 二进制代码 Binary compound semiconductor 二元化合物半导体Bipolar 双极性的 Bipolar Junction Transistor （BJT）双极晶体管Bloch 布洛赫 Blocking band 阻挡能带Blocking contact 阻挡接触 Body - centered 体心立方Body-centred cubic structure 体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器 Boron 硼Borosilicate glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk 体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination 体复合Burn - in 老化 Burn out 烧毁Buried channel 埋沟 Buried diffusion region 隐埋扩散区CCan 外壳 Capacitance 电容Capture cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade 级联 Case 管壳Cathode 阴极 Center 中心Ceramic 陶瓷（的） Channel 沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance 特征阻抗Charge 电荷、充电 Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒 Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光Chemmically-Mechanically Polish （CMP）化学机械抛光 Chip 芯片Chip yield 芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage plane 解理面Clock rate 时钟频率 Clock generator 时钟发生器Clock flip-flop 时钟触发器 Close-packed structure 密堆积结构Close-loop gain 闭环增益 Collector 集电极Collision 碰撞 Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection ratio （CMRR）共模抑制比Compatibility 兼容性 Compensation 补偿Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（CMOS）互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design （CAD）/test（CAT）/manufacture（CAM）计算机辅助设计/ 测试 /制造Compound Semiconductor 化合物半导体 Conductance 电导Conduction band （edge）导带（底） Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration 组态 Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面 Constant-source diffusion恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程 Contact hole 接触孔Contact potential 接触电势 Continuity condition 连续性条件Contra doping 反掺杂 Controlled 受控的Converter 转换器 Conveyer 传输器Copper interconnection system 铜互连系统 Couping 耦合Covalent 共阶的 Crossover 跨交Critical 临界的 Crossunder 穿交Crucible坩埚 Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度 Curvature 曲率Cut off 截止 Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样 Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）DDangling bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度De.broglie 德布洛意 Decderate 减速Decibel （dB）分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor level 深施主能级Deep impurity level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation 退化 Degree Celsius（centigrade） /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽MOSDepletion region 耗尽区 Deposited film 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数dice） Diode 二极管Dielectric 介电的 Dielectric isolation 介质隔离Difference-mode input 差模输入 Differential amplifier 差分放大器Differential capacitance 微分电容 Diffused junction 扩散结Diffusion 扩散 Diffusion coefficient 扩散系数Diffusion constant 扩散常数 Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路 Dipole domain 偶极畴Dipole layer 偶极层 Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体 Direct transition 直接跃迁Discharge 放电 Discrete component 分立元件Dissipation 耗散 Distribution 分布Distributed capacitance 分布电容 Distributed model 分布模型Displacement 位移 Dislocation 位错Domain 畴 Donor 施主Donor exhaustion 施主耗尽 Dopant 掺杂剂Doped semiconductor 掺杂半导体 Doping concentration 掺杂浓度Double-diffusive MOS（DMOS）双扩散MOS.Drift 漂移 Drift field 漂移电场Drift mobility 迁移率 Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化 Dose 剂量Duty cycle 工作周期 Dual-in-line package （DIP）双列直插式封装Dynamics 动态 Dynamic characteristics 动态属性Dynamic impedance 动态阻抗EEarly effect 厄利效应 Early failure 早期失效Effective mass 有效质量 Einstein relation（ship）爱因斯坦关系Electric Erase Programmable Read Only Memory（E2PROM）一次性电可擦除只读存储器Electrode 电极 Electrominggratim 电迁移Electron affinity 电子亲和势 Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气 Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt （eV）电子伏Electrostatic 静电的 Element 元素/元件/配件Elemental semiconductor 元素半导体 Ellipse 椭圆Ellipsoid 椭球 Emitter 发射极Emitter-coupled logic 发射极耦合逻辑 Emitter-coupled pair 发射极耦合对Emitter follower 射随器 Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试 Energy state 能态Energy momentum diagram 能量-动量（E-K）图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic （低）共溶的Environmental test 环境测试 Epitaxial 外延的Epitaxial layer 外延层 Epitaxial slice 外延片Expitaxy 外延 Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM （EPROM）可搽取（编程）存储器Error function complement （erfc）余误差函数Etch 刻蚀 Etchant 刻蚀剂Etching mask 抗蚀剂掩模 Excess carrier 过剩载流子Excitation energy 激发能 Excited state 激发态Exciton 激子 Extrapolation 外推法Extrinsic 非本征的 Extrinsic semiconductor 杂质半导体FFace - centered 面心立方 Fall time 下降时间Fan-in 扇入 Fan-out 扇出Fast recovery 快恢复 Fast surface states 快界面态Feedback 反馈 Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布 Femi potential 费米势Fick equation 菲克方程（扩散） Field effect transistor 场效应晶体管Field oxide 场氧化层 Filled band 满带Film 薄膜 Flash memory 闪烁存储器Flat band 平带 Flat pack 扁平封装Flicker noise 闪烁（变）噪声 Flip-flop toggle 触发器翻转Floating gate 浮栅 Fluoride etch 氟化氢刻蚀Forbidden band 禁带 Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应 Function 函数GGain 增益 Gallium-Arsenide（GaAs）砷化钾Gamy ray r 射线 Gate 门、栅、控制极Gate oxide 栅氧化层 Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布 Generation-recombination 产生-复合Geometries 几何尺寸 Germanium（Ge）锗Graded 缓变的 Graded （gradual） channel 缓变沟道Graded junction 缓变结 Grain 晶粒Gradient 梯度 Grown junction 生长结Guard ring 保护环 Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应HHardened device 辐射加固器件 Heat of formation 形成热Heat sink 散热器、热沉 Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂 Hell - effect 霍尔效应Heterojunction 异质结 Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.（ H-MOS）高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器 Hot carrior 热载流子Hybrid integration 混合集成IImage - force 镜象力 Impact ionization 碰撞电离Impedance 阻抗 Imperfect structure 不完整结构Implantation dose 注入剂量 Implanted ion 注入离子Impurity 杂质 Impurity scattering 杂质散射Incremental resistance 电阻增量（微分电阻） In-contact mask 接触式掩模Indium tin oxide （ITO）铟锡氧化物 Induced channel 感应沟道Infrared 红外的 Injection 注入Input offset voltage 输入失调电压 Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分 Interconnection 互连Interconnection time delay 互连延时 Interdigitated structure 交互式结构Interface 界面 Interference 干涉International system of unions国际单位制 Internally scattering 谷间散射Interpolation 内插法 Intrinsic 本征的Intrinsic semiconductor 本征半导体 Inverse operation 反向工作Inversion 反型 Inverter 倒相器Ion 离子 Ion beam 离子束Ion etching 离子刻蚀 Ion implantation 离子注入Ionization 电离 Ionization energy 电离能Irradiation 辐照 Isolation land 隔离岛Isotropic 各向同性JJunction FET（JFET）结型场效应管 Junction isolation 结隔离Junction spacing 结间距 Junction side-wall 结侧壁LLatch up 闭锁 Lateral 横向的Lattice 晶格 Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流 Level shifting 电平移动Life time 寿命 linearity 线性度Linked bond 共价键 Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻 Light Emitting Diode（LED）发光二极管Load line or Variable 负载线 Locating and Wiring 布局布线Longitudinal 纵向的 Logic swing 逻辑摆幅Lorentz 洛沦兹 Lumped model 集总模型MMajority carrier 多数载流子 Mask 掩膜板，光刻板Mask level 掩模序号 Mask set 掩模组Mass - action law质量守恒定律 Master-slave D flip-flop主从D触发器Matching 匹配 Maxwell 麦克斯韦Mean free path 平均自由程 Meandered emitter junction梳状发射极结Mean time before failure （MTBF）平均工作时间Megeto - resistance 磁阻 Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化 Microelectronic technique 微电子技术Microelectronics 微电子学 Millen indices 密勒指数Minority carrier 少数载流子 Misfit 失配Mismatching 失配 Mobile ions 可动离子Mobility 迁移率 Module 模块Modulate 调制 Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor（MOST ）MOS. 晶体管 Multiplication 倍增Modulator 调制 Multi-chip IC 多芯片ICMulti-chip module（MCM）多芯片模块 Multiplication coefficient倍增因子NNaked chip 未封装的芯片（裸片） Negative feedback 负反馈Negative resistance 负阻 Nesting 套刻Negative-temperature-coefficient 负温度系数 Noise margin 噪声容限Nonequilibrium 非平衡 Nonrolatile 非挥发（易失）性Normally off/on 常闭/开 Numerical analysis 数值分析OOccupied band 满带 Officienay 功率Offset 偏移、失调 On standby 待命状态Ohmic contact 欧姆接触 Open circuit 开路Operating point 工作点 Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon =photon 光子 Optical quenching光猝灭Optical transition 光跃迁 Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体 Orientation 晶向、定向Outline 外形 Out-of-contact mask非接触式掩模Output characteristic 输出特性 Output voltage swing 输出电压摆幅Overcompensation 过补偿 Over-current protection 过流保护Over shoot 过冲 Over-voltage protection 过压保护Overlap 交迭 Overload 过载Oscillator 振荡器 Oxide 氧化物Oxidation 氧化 Oxide passivation 氧化层钝化PPackage 封装 Pad 压焊点Parameter 参数 Parasitic effect 寄生效应Parasitic oscillation 寄生振荡 Passination 钝化Passive component 无源元件 Passive device 无源器件Passive surface 钝化界面 Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压 Peak voltage 峰值电压Permanent-storage circuit 永久存储电路 Period 周期Periodic table 周期表 Permeable - base 可渗透基区Phase-lock loop 锁相环 Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导 Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件 Photolithographic process 光刻工艺（photo） resist （光敏）抗腐蚀剂 Pin 管脚Pinch off 夹断 Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺 Planar transistor 平面晶体管Plasma 等离子体 Plezoelectric effect 压电效应Poisson equation 泊松方程 Point contact 点接触Polarity 极性 Polycrystal 多晶Polymer semiconductor聚合物半导体 Poly-silicon 多晶硅Potential （电）势 Potential barrier 势垒Potential well 势阱 Power dissipation 功耗Power transistor 功率晶体管 Preamplifier 前置放大器Primary flat 主平面 Principal axes 主轴Print-circuit board（PCB）印制电路板 Probability 几率Probe 探针 Process 工艺Propagation delay 传输延时 Pseudopotential method 膺势发Punch through 穿通 Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator（PWM）脉冲宽度调制punchthrough 穿通 Push-pull stage 推挽级QQuality factor 品质因子 Quantization 量子化Quantum 量子 Quantum efficiency量子效应Quantum mechanics 量子力学 Quasi - Fermi－level准费米能级Quartz 石英RRadiation conductivity 辐射电导率 Radiation damage 辐射损伤Radiation flux density 辐射通量密度 Radiation hardening 辐射加固Radiation protection 辐射保护 Radiative - recombination辐照复合Radioactive 放射性 Reach through 穿通Reactive sputtering source 反应溅射源 Read diode 里德二极管Recombination 复合 Recovery diode 恢复二极管Reciprocal lattice 倒核子 Recovery time 恢复时间Rectifier 整流器（管） Rectifying contact 整流接触Reference 基准点基准参考点 Refractive index 折射率Register 寄存器 Registration 对准Regulate 控制调整 Relaxation lifetime 驰豫时间Reliability 可*性 Resonance 谐振Resistance 电阻 Resistor 电阻器Resistivity 电阻率 Regulator 稳压管（器）Relaxation 驰豫 Resonant frequency共射频率Response time 响应时间 Reverse 反向的Reverse bias 反向偏置SSampling circuit 取样电路 Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷 Saturated current range电流饱和区Saturation region 饱和区 Saturation 饱和的Scaled down 按比例缩小 Scattering 散射Schockley diode 肖克莱二极管 Schottky 肖特基Schottky barrier 肖特基势垒 Schottky contact 肖特基接触Schrodingen 薛定厄 Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶 Segregation 分凝Selectivity 选择性 Self aligned 自对准的Self diffusion 自扩散 Semiconductor 半导体Semiconductor-controlled rectifier 可控硅 Sendsitivity 灵敏度Serial 串行/串联 Series inductance 串联电感Settle time 建立时间 Sheet resistance 薄层电阻Shield 屏蔽 Short circuit 短路Shot noise 散粒噪声 Shunt 分流Sidewall capacitance 边墙电容 Signal 信号Silica glass 石英玻璃 Silicon 硅Silicon carbide 碳化硅 Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4）氮化硅 Silicon On Insulator 绝缘硅Siliver whiskers 银须 Simple cubic 简立方Single crystal 单晶 Sink 沉Skin effect 趋肤效应 Snap time 急变时间Sneak path 潜行通路 Sulethreshold 亚阈的Solar battery/cell 太阳能电池 Solid circuit 固体电路Solid Solubility 固溶度 Sonband 子带Source 源极 Source follower 源随器Space charge 空间电荷 Specific heat（PT）热Speed-power product 速度功耗乘积 Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自发发射 Spreading resistance扩展电阻Sputter 溅射 Stacking fault 层错Static characteristic 静态特性 Stimulated emission 受激发射Stimulated recombination 受激复合 Storage time 存储时间Stress 应力 Straggle 偏差Sublimation 升华 Substrate 衬底Substitutional 替位式的 Superlattice 超晶格Supply 电源 Surface 表面Surge capacity 浪涌能力 Subscript 下标Switching time 开关时间 Switch 开关TTailing 扩展 Terminal 终端Tensor 张量 Tensorial 张量的Thermal activation 热激发 Thermal conductivity 热导率Thermal equilibrium 热平衡 Thermal Oxidation 热氧化Thermal resistance 热阻 Thermal sink 热沉Thermal velocity 热运动 Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术 Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor（TFT）薄膜晶体 Threshlod 阈值Thyistor 晶闸管 Transconductance 跨导Transfer characteristic 转移特性 Transfer electron 转移电子Transfer function 传输函数 Transient 瞬态的实用标准文档大全Transistor aging（stress）晶体管老化 Transit time 渡越时间Transition 跃迁 Transition-metal silica 过度金属硅化物Transition probability 跃迁几率 Transition region 过渡区Transport 输运 Transverse 横向的Trap 陷阱 Trapping 俘获Trapped charge 陷阱电荷 Triangle generator 三角波发生器Triboelectricity 摩擦电 Trigger 触发Trim 调配调整 Triple diffusion 三重扩散Truth table 真值表 Tolerahce 容差Tunnel（ing）隧道（穿） Tunnel current 隧道电流Turn over 转折 Turn - off time 关断时间UUltraviolet 紫外的 Unijunction 单结的Unipolar 单极的 Unit cell 原（元）胞Unity-gain frequency 单位增益频率 Unilateral-switch单向开关VVacancy 空位 Vacuum 真空Valence（value） band 价带 Value band edge 价带顶Valence bond 价键 Vapour phase 汽相Varactor 变容管 Varistor 变阻器Vibration 振动 Voltage 电压WWafer 晶片 Wave equation 波动方程Wave guide 波导 Wave number 波数Wave-particle duality 波粒二相性 Wear-out 烧毁Wire routing 布线 Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。

慢跑的好习惯英语作文全文共3篇示例，供读者参考篇1The Benefits of Running as a Good HabitRunning is a popular form of exercise that offers numerous physical and mental health benefits. It is a great way to stay active, improve cardiovascular health, enhance endurance, and boost overall well-being. Developing a habit of running regularly can have a positive impact on your life in many ways.One of the key benefits of running as a good habit is the improvement of cardiovascular health. Running helps to strengthen the heart and improve circulation, which in turn can reduce the risk of heart disease, stroke, and high blood pressure. Regular running can also help to lower cholesterol levels and improve overall cardiovascular fitness.In addition to improving cardiovascular health, running is also an effective way to burn calories and lose weight. Running is a high-intensity exercise that can help to increase metabolism and burn fat, making it an excellent choice for those looking tomaintain a healthy weight or lose excess pounds. Running also helps to tone muscles and improve overall body composition.Another benefit of running as a good habit is the enhancement of mental health and well-being. Running has been shown to reduce stress, anxiety, and depression, as well as improve mood and boost self-esteem. The release of endorphins during exercise can help to alleviate symptoms of depression and improve overall mental health.Developing a habit of running can also help to improve endurance, stamina, and overall fitness levels. Regular running can help to increase lung capacity, improve muscle strength, and enhance flexibility. Running can also improve coordination, balance, and agility, making it a great all-around exercise for overall physical fitness.In addition to the physical and mental health benefits, running can also be a social activity that promotes camaraderie and friendship. Joining a running club or participating in races can help to connect with like-minded individuals, build a sense of community, and support one another in achieving fitness goals.Overall, running is a great habit to develop for improved health and well-being. By making running a regular part of yourroutine, you can enjoy the numerous benefits it offers, including improved cardiovascular health, weight loss, mental health benefits, improved fitness levels, and social connections. So lace up your running shoes and hit the pavement for a healthier, happier life.篇2The Benefits of RunningRunning is a popular form of exercise that offers numerous benefits for both physical and mental health. It is a simple and effective way to stay fit, improve cardiovascular health, lose weight, and reduce stress. In this article, we will explore the many advantages of this wonderful activity and why it is a good habit to incorporate into your daily routine.First and foremost, running is an excellent way to improve your overall physical fitness. It helps to strengthen the heart and lungs, improve circulation, and increase stamina. Regular running can also help to build strong muscles, improve flexibility, and enhance coordination and balance. By challenging your body with this high-impact exercise, you can achieve a leaner and more toned physique.In addition to its physical benefits, running is also great for mental well-being. Many people find that running helps to alleviate stress, anxiety, and depression. The rhythmic motion of running can be meditative and calming, allowing you to clear your mind and focus on the present moment. The release of endorphins during exercise can also improve mood and boost overall feelings of happiness and well-being.Furthermore, running can be a great way to set and achieve personal goals. Whether you are training for a race or simply trying to improve your speed or distance, running provides a tangible measure of progress and accomplishment. Setting goals and working towards them can be incredibly motivating and satisfying, giving you a sense of purpose and achievement.Another benefit of running is its accessibility and affordability. All you need is a pair of good running shoes and some comfortable workout clothes, and you can hit the road or the treadmill anytime, anywhere. Running can be done alone or with a group, indoors or outdoors, making it a flexible and convenient form of exercise for people of all ages and fitness levels.Despite its many benefits, running can also pose some risks, especially if done improperly or excessively. It is important towarm up before running, stretch afterwards, and listen to your body to avoid injury. It is also essential to wear proper footwear, stay hydrated, and take rest days to allow your body to recover and prevent burnout.In conclusion, running is a fantastic habit to cultivate for a healthy body and mind. Its physical and mental benefits are numerous, making it an excellent way to stay fit, relieve stress, set and achieve goals, and improve overall well-being. So lace up your shoes, hit the pavement, and start reaping the rewards of this wonderful exercise. Your body and mind will thank you for it.篇3The Benefits of Running as a Healthy HabitRunning is a popular form of exercise that has many benefits for both physical and mental health. It is a great way to improve cardiovascular fitness, build strength, and reduce stress. Developing a regular running routine can have a positive impact on overall well-being and quality of life.One of the key benefits of running is that it helps improve cardiovascular health. Regular running can increase your heart rate and improve circulation, leading to a stronger heart and lower risk of heart disease. It also helps to strengthen themuscles in your legs and core, which can improve your overall fitness and stamina.In addition to physical benefits, running can also have a positive impact on mental health. Running is known to release endorphins, which are often referred to as “feel-good” hormones. These hormones can help reduce feelings of stress, anxiety, and depression. Running outdoors can also provide a sense of connection to nature and help improve mood and mental well-being.Developing a regular running routine can also help improve discipline and consistency. Setting specific goals, such as running a certain distance or completing a race, can provide motivation to stick to a training schedule. The sense of accomplishment from meeting these goals can help build self-confidence and self-esteem.Running is also a great way to reduce the risk of chronic diseases such as diabetes and obesity. Regular physical activity can help maintain a healthy weight and improve insulin sensitivity, reducing the risk of developing type 2 diabetes. Running can also help burn calories and increase metabolism, making it an effective way to manage weight and maintain a healthy lifestyle.In order to develop a successful running routine, it is important to start slowly and gradually increase the intensity and duration of your runs. It is also important to listen to your body and take rest days as needed to prevent injury and allow for recovery. Many runners find it helpful to mix up their routine with different types of runs, such as interval training or hill repeats, to keep things interesting and challenging.Overall, running is a great way to improve physical fitness, mental health, and overall well-being. It can provide a sense of accomplishment, reduce stress, and improve cardiovascular health. By developing a regular running routine, you can enjoy the many benefits of this healthy habit and improve your quality of life.。