CZT3055贴片三极管 SOT-223三极管封装CZT3055参数

MJD3055MJD3055MJD3055DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can bereasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.A CEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™STAR*POWER is used under license。

TIP3055是什么三极管？TIP3055晶体管的参数+TIP3055功能介绍我是小七，干货满满。

大家不要错过，建议收藏，错过就不一定找得到了，内容仅供参考，图片记得放大观看。

如果有什么错误或者不对，欢迎各位大佬指点。

图片来源于网络今天是TIP3055 功率晶体管，主要是以下几个方面：•1、TIP3055 是个什么管？TIP3055是什么三极管？•2、TIP3055 引脚说明•3、TIP3055 CAD模型•4、TIP3055 晶体管的参数•5、TIP3055 可以用什么替代•6、TIP3055 功能介绍一、TIP3055 是个什么管？TIP3055是什么三极管？TIP3055是采用TO-247型封装的硅NPN晶体管，专为通用开关和放大器应用而设计。

TIP3055 是工作范围内的三层 NPN 器件，集电极电流 IC 是基极电流IB 的函数，对于给定的集电极-发射极电压VCE，基极电流的变化会导致集电极电流的相应放大变化。

TIP3055 实物图二、TIP3055引脚说明TIP3055引脚说明TIP3055引脚说明三、TIP3055 CAD模型1、TIP3055 电路符号TIP3055 电路符号2、TIP3055 引脚尺寸TIP3055 引脚尺寸3、TIP3055 3D 模型TIP3055 3D 模型四、TIP3055 晶体管的参数1、TIP3055 三极管参数TIP3055 三极管参数2、TIP3055三极管电气特性TIP3055三极管电气特性五、TIP3055可以用什么替代你可以将TIP3055 替换为BD745A、BD745B、BD745C、NTE392、TIP3055G、TIP35A、TIP35AG、TIP35B、TIP35BG、TIP35C、TIP35CA 或 TIP35CG。

六、TIP3055 功能介绍1、TIP3055 功能介绍--构建可变直流电源可变直流电源是电子爱好者工作台上最有用的工具之一。

3055简介：3055是一个广泛应用于电子产品中的NPN功率晶体管，主要用于放大和开关应用。

它具有高频率能力和高电流能力，使其在多个领域中得到广泛使用。

一、基本特性1. 封装类型：TO-220AB、TO-220FP、TO-3PN、SOT-322. 极限电压：集电极-发射极(VCEO)为60V，集电极-基极(VCEV)为60V，发射极-基极(VEBO)为5V3. 最大电流：集电极电流(IC)为10A4. 最大功率：最大耗散功率(PD)为65W5. 高频特性：截止频率(fT)为2.5MHz二、主要应用3055广泛应用于各种电子设备中，包括音频放大器、功率开关和稳压电路等。

以下是该晶体管在一些常见应用中的使用情况：1. 音频放大器3055在音频放大器电路中通常作为功率输出器件。

由于它具有良好的线性特性和高频特性，能够提供较大的音频功率输出。

它经常用于音响系统、家庭影院系统和车载音响系统等。

2. 电源开关3055在电源开关电路中扮演着重要的角色。

它能够通过控制输入信号的变化来实现电源的开关和闭合。

这使得3055在开关电源、UPS（不间断电源）和电动机控制等应用中广泛使用。

3. 稳压电路3055也常被用于稳压电路中，用来控制输出电压的稳定性。

通过正确的设计和配置，可以实现稳定的输出电压，并保护其他电子元件不受过高或过低的电压影响。

4. RF功率放大器由于3055具有较高的频率特性，因此它也可以用作射频功率放大器中的驱动器等。

它能够根据输入信号的变化来放大射频信号，并在射频系统中提供所需的功率。

三、性能参数1. 饱和压降：集电极-发射极饱和压降(VCEsat)为1.1V（最大）2. 硬开关时间：开关时间(Ton, Toff)为1.0μs（最小）3. 热阻：封装的热阻(Junction-to-case thermal resistance)为1.8°C/W（最大）4. 输入电容：输入电容(Cib)为45pF（典型值）四、元件选型和替代型号在选择3055晶体管时，您应该考虑以下因素：1. 特性匹配：根据您所需的应用要求，选择与3055相匹配的特性。

.March 2008Rev 51/7TIP2955TIP3055Complementary power transistorsFeatures■Low collector-emitter saturation voltage ■Complementary NPN - PNP transistorsApplications■General purpose ■Audio AmplifierDescriptionThe devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Table 1.Device summaryOrder code Marking Package PackagingTIP2955TIP2955TO-247tubeTIP3055TIP3055Absolute maximun ratingTIP2955 - TIP30552/71 Absolute maximun ratingTable 2.Absolute maximum ratingNote:For PNP type voltage and current values are negativeSymbolParameterValueUnitNPN TIP3055PNPTIP2955V CBO Collector-emitter voltage (I E = 0) 100V V CER Collector-emitter voltage (R BE = 100 Ω) 70V V CEO Collector-emitter voltage (I B = 0) 60V V EBO Collector-base voltage (I C = 0) 7V I C Collector current 15A I B Base current7A P tot T otal dissipation at T c ≤ 25°C 90W T stg Storage temperature-65 to 150°C T JMax. operating junction temperature150°CTIP2955 - TIP3055Electrical characteristics3/72 Electrical characteristics(T case = 25 °C; unless otherwise specified)Table 3.Electrical characteristicsSymbol ParameterTest conditionsMin.Typ.Max.Unit I CEXCollector cut-off current(V BE = -1.5 V)V CE = 100 VV CE = 100 V T C = 150 o C 15mA mA I CEO Collector cut-off current (I B = 0)V CE = 30 V 0.7mAI EBOEmitter cut-off current (I C = 0)V EB = 7 V5mA V CEO(sus)(1)1.Pulse duration = 300 µs, duty cycle ≤ 1.5% Note:For PNP type voltage and current values are negativeCollector-emitter sustainingvoltage (I B = 0)I C = 200 mA 60V V CER(sus)(1)Collector-emitter sustainingvoltage (R BE = 100 Ω)I C = 200 mA 70V V CE(sat)(1)Collector-emitter saturation voltage I C = 4 A I B = 400 mA I C = 10 A I B = 3.3 A 13V V V BE (1)Base-emitter voltage I C = 4 A V CE = 4 V 1.8Vh FE (1)DC current gainI C = 4 A V CE = 4 V I C = 10 A V CE = 4 V20570Package mechanical data TIP2955 - TIP3055 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOP ACK is an ST trademark. ECOPACK specifications are available at : 4/7TIP2955 - TIP3055Package mechanical data5/7Revision historyTIP2955 - TIP30556/74 Revision historyTable 4.Document revision historyDate RevisionChanges30-Aug-1999410-Jan-20085Package change from TO-218 to TO-247.TIP2955 - TIP3055Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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UNLESS EXPRESSLY APPRO VED IN WRITING BY AN AUTHO RIZE REPRESENTATIVE O F ST, ST PRO DUCTS ARE NO T RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. 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2CZ系列稳压⼆极管参数2CZ系列稳压⼆极管参数型号PDF资料⼚商特性⽤途极限⼯作电压Vrwm(V)极限⼯作电流Im(A)耗散功率Pw(w)最⾼⼯作频率fm(Hz)代换型号02CZ10TOSHIBA9.4～10.6V稳压⼆极管10.6 0.00502CZ10-XTOSHIBA9.35～9.93V稳压⼆极管9.93 0.00502CZ10-YTOSHIBA9.69～10.26V稳压⼆极管10.26 0.00502CZ10-ZTOSHIBA10.02～10.6V稳压⼆极管10.6 0.00502CZ11TOSHIBA10.4～11.6V稳压⼆极管11.6 0.00502CZ11-XTOSHIBA10.34～10.95V稳压⼆极管10.95 0.00502CZ11-YTOSHIBA10.67～11.23V稳压⼆极管11.23 0.00502CZ11-ZTOSHIBA11～11.57V稳压⼆极管11.57 0.00502CZ12TOSHIBA11.4～12.6V稳压⼆极管12.6 0.00502CZ12-XTOSHIBA11.34～11.9V稳压⼆极管11.9 0.00502CZ12-YTOSHIBA11.67～12.23V稳压⼆极管12.23 0.00502CZ12-ZTOSHIBA12～12.57V稳压⼆极管12.57 0.00502CZ13TOSHIBA12.4～14.1V稳压⼆极管14.1 0.00502CZ13-XTOSHIBA12.34～13.05V稳压⼆极管13.05 0.00502CZ13-YTOSHIBA12.82～13.54V稳压⼆极管13.54 0.00502CZ13-ZTOSHIBA13.31～14.07V稳压⼆极管14.07 0.00502CZ15TOSHIBA13.8～15.6V稳压⼆极管15.6 0.00502CZ15-XTOSHIBA13.74～14.6V稳压⼆极管14.6 0.00502CZ15-YTOSHIBA14.27～15.08V稳压⼆极管15.08 0.00502CZ15-ZTOSHIBA14.75～15.54V稳压⼆极管15.54 0.00502CZ16TOSHIBA16.3～17.1V稳压⼆极管17.1 0.00502CZ16-XTOSHIBA15.15～16.04V稳压⼆极管16.04 0.00502CZ16-YTOSHIBA15.65～16.54V稳压⼆极管16.54 0.00502CZ16-ZTOSHIBA16.15～17.04V稳压⼆极管17.04 0.00502CZ2.0TOSHIBA1.85～2.15V稳压⼆极管 2.15 0.00502CZ2.0-XTOSHIBA1.28～1.46V稳压⼆极管 1.46 0.005型号PDF资料⼚商特性⽤途极限⼯作电压Vrwm(V)极限⼯作电流Im(A)耗散功率Pw(w)最⾼⼯作频率fm(Hz)代换型号02CZ2.0-ZTOSHIBA1.38～1.52V稳压⼆极管 1.52 0.00502CZ2.2TOSHIBA2.05～2.38V稳压⼆极管 2.38 0.00502CZ2.2-XTOSHIBA1.45～1.6V稳压⼆极管 1.6 0.00502CZ2.2-ZTOSHIBA1.52～1.67V稳压⼆极管 1.67 0.00502CZ2.4TOSHIBA2.28～2.6V稳压⼆极管 2.6 0.00502CZ2.4-XTOSHIBA1.64～1.81V稳压⼆极管 1.81 0.00502CZ2.4-ZTOSHIBA1.72～1.89V稳压⼆极管 1.89 0.00502CZ2.7TOSHIBA2.5～2.9V稳压⼆极管 2.9 0.00502CZ2.7-XTOSHIBA1.81～2V稳压⼆极管 2 0.00502CZ2.7-ZTOSHIBA1.92～2.12V稳压⼆极管 2.12 0.00502CZ20TOSHIBA18.8～21.2V稳压⼆极管21.2 0.00502CZ20-XTOSHIBA18.65～19.72V稳压⼆极管19.72 0.00502CZ20-YTOSHIBA19.33～20.4V稳压⼆极管20.4 0.00502CZ20-ZTOSHIBA19.97～21.14V稳压⼆极管21.14 0.00502CZ22TOSHIBA20.8～23.33V稳压⼆极管23.33 0.00502CZ22-XTOSHIBA20.61～21.82V稳压⼆极管21.82 0.00502CZ22-YTOSHIBA21.29～22.5V稳压⼆极管22.5 0.00502CZ22-ZTOSHIBA21.97～23.24V稳压⼆极管23.24 0.00502CZ24TOSHIBA22.8～25.6V稳压⼆极管25.6 0.00502CZ24-XTOSHIBA22.61～24.05V稳压⼆极管24.05 0.00502CZ24-YTOSHIBA23.42～24.86V稳压⼆极管24.86 0.00502CZ24-ZTOSHIBA24.23～25.54V稳压⼆极管25.54 0.00502CZ3.3TOSHIBA3.1～3.5V稳压⼆极管 3.5 0.00502CZ3.6TOSHIBA3.4～3.8V稳压⼆极管 3.8 0.00502CZ3.6-XTOSHIBA2.51～2.74V稳压⼆极管 2.74 0.00502CZ3.6-ZTOSHIBA2.65～2.89V稳压⼆极管 2.89 0.005型号PDF资料⼚商特性⽤途极限⼯作电压Vrwm(V)极限⼯作电流Im(A)耗散功率Pw(w)最⾼⼯作频率fm(Hz)代换型号02CZ3.9TOSHIBA3.7～4.1V稳压⼆极管 4.1 0.00502CZ3.9-XTOSHIBA2.79～3.06V稳压⼆极管 3.06 0.00502CZ3.9-ZTOSHIBA2.95～3.2V稳压⼆极管 3.2 0.00502CZ30TOSHIBA28～32V稳压⼆极管32 0.00502CZ33TOSHIBA31～35V稳压⼆极管35 0.00502CZ36TOSHIBA34～38V稳压⼆极管38 0.00502CZ39TOSHIBA37～41V稳压⼆极管41 0.00502CZ4.3TOSHIBA3.7～4.1V稳压⼆极管 4.1 0.00502CZ4.3-XTOSHIBA3.06～3.35V稳压⼆极管 3.35 0.00502CZ4.3-YTOSHIBA3.35～3.72V稳压⼆极管 3.72 0.00502CZ4.3-ZTOSHIBA3.23～3.46V稳压⼆极管 3.46 0.00502CZ4.7TOSHIBA4～4.5V稳压⼆极管 4.5 0.00502CZ4.7-XTOSHIBA3.56～3.92V稳压⼆极管 3.92 0.00502CZ4.7-YTOSHIBA3.74～4.05V稳压⼆极管 4.05 0.00502CZ4.7-ZTOSHIBA3.9～4.22V稳压⼆极管 4.22 0.00502CZ43TOSHIBA40～45V稳压⼆极管45 0.00502CZ47TOSHIBA44～49V稳压⼆极管49 0.00502CZ5.1TOSHIBA4.4～4.9V稳压⼆极管 4.9 0.00502CZ5.1-XTOSHIBA4.08～4.48V稳压⼆极管 4.48 0.00502CZ5.1-YTOSHIBA4.32～4.73V稳压⼆极管 4.73 0.00502CZ5.6-ZTOSHIBA5.3～5.9V稳压⼆极管 5.9 0.00502CZ6.2TOSHIBA5.8～6.6V稳压⼆极管 6.6 0.00502CZ6.2-XTOSHIBA5.6～6.12V稳压⼆极管 6.12 0.00502CZ6.2-YTOSHIBA5.89～6.34V稳压⼆极管 6.34 0.00502CZ6.2-ZTOSHIBA6.12～6.57V稳压⼆极管 6.57 0.00502CZ6.8TOSHIBA6.4～7.2V稳压⼆极管7.2 0.005型号PDF资料⼚商特性⽤途极限⼯作电压Vrwm(V)极限⼯作电流Im(A)耗散功率Pw(w)最⾼⼯作频率fm(Hz)代换型号02CZ6.8-XTOSHIBA6.35～6.8V稳压⼆极管 6.8 0.00502CZ6.8-YTOSHIBA6.59～7.02V稳压⼆极管7.02 0.00502CZ6.8-ZTOSHIBA6.81～7.2V稳压⼆极管7.2 0.00502CZ7.5TOSHIBA7～7.9V稳压⼆极管7.9 0.00502CZ7.5-XTOSHIBA6.96～7.43V稳压⼆极管7.43 0.00502CZ7.5-YTOSHIBA7.19～7.66V稳压⼆极管7.66 0.00502CZ7.5-ZTOSHIBA7.42～7.9V稳压⼆极管7.9 0.00502CZ8.2TOSHIBA7.7～8.7V稳压⼆极管8.7 0.00502CZ8.2-XTOSHIBA7.66～8.16V稳压⼆极管8.16 0.00502CZ8.2-YTOSHIBA6.59～7.02V稳压⼆极管7.02 0.00502CZ8.2-ZTOSHIBA8.19～8.7V稳压⼆极管8.7 0.00502CZ9.1TOSHIBA8.5～9V稳压⼆极管9 0.00502CZ9.1-XTOSHIBA8.46～9V稳压⼆极管9 0.00502CZ9.1-YTOSHIBA8.76～9.3V稳压⼆极管9.3 0.00502CZ9.1-ZTOSHIBA9.06～9.6V稳压⼆极管9.6 0.005。

1Complementary Silicon Plastic Power Transistors...designed for use in general–purpose amplifier and switching applications.•DC Current Gain Specified to 10 Amperes •High Current Gain — Bandwidth Product —f T = 2.0 MHz (Min) @ I C = 500 mAdc10Figure 1. Active–Region Safe Operating AreaV CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)5.02.01.00.20.1I C , C O L L E C T O R C U R R E N T (A M P )0.57.03.00.70.3There are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation;i.e., the transistor must not be subjected to greater dissipa-tion than the curves indicate.The data of Figure 1 is based on T J(pk) = 150_C. T C is vari-able depending on conditions. Second breakdown pulse lim-its are valid for duty cycles to 10% provided T J(pk) v 150_C.At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A)Preferred devices are Motorola recommended choices for future use and best overall value.MOTOROLA SEMICONDUCTOR TECHNICAL DATAOrder this documentby MJE2955T/D查询MJE3055T供应商MJE2955T MJE3055T2Motorola Bipolar Power Transistor Device DataELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwise noted)CharacteristicSymbol Min Max Unit OFF CHARACTERISTICSCollector–Emitter Sustaining Voltage (1) (I C = 200 mAdc, I B = 0)V CEO(sus)60—VdcCollector Cutoff Current (V CE = 30 Vdc, I B = 0)I CEO —700µAdc Collector Cutoff Current(V CE = 70 Vdc, V EB(off) = 1.5 Vdc)(V CE = 70 Vdc, V EB(off) = 1.5 Vdc, T C = 150_C)I CEX—— 1.05.0mAdcCollector Cutoff Current (V CB = 70 Vdc, I E = 0)(V CB = 70 Vdc, I E = 0, T C = 150_C)I CBO—— 1.010mAdcEmitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)I EBO —5.0mAdc ON CHARACTERISTICS DC Current Gain (1)(I C = 4.0 Adc, V CE = 4 0 Vdc)(I C = 10 Adc, V CE = 4.0 Vdc)h FE205.0100——Collector–Emitter Saturation Voltage (1)(I C = 4.0 Adc, I B = 0.4 Adc)(I C = 10 Adc, I B = 3.3 Adc)V CE(sat)—— 1.18.0VdcBase–Emitter On Voltage (1) (I C = 4.0 Adc, V CE = 4.0 Vdc)V BE(on)—1.8Vdc DYNAMIC CHARACTERISTICSCurrent–Gain–Bandwidth Product (I C = 500 mAdc, V CE = 10 Vdc, f = 500 kHz)f T2.0—MHz(1)Pulse T est: Pulse Width v 300 µs, Duty Cycle v 20%.0T C , CASE TEMPERATURE (°C)751001752550Figure 2. DC Current Gain1251505000.01Figure 3. Power DeratingI C , COLLECTOR CURRENT (AMP)5.00.020.050.10.2 1.0 2.0100.530020010050309008060407050h F E , D C C U R R E N T G A I N2010 5.0T J = 150°C25°C–55°CV CE = 2.0 VP D , P O W E R D I S S I P A T I O N (W A T T S )301020MJE3055T MJE2955T0.1I C , COLLECTOR CURRENT (AMP)0.5 1.0100.20.3 2.0 3.0Figure 4. “On” Voltages2.001.61.20.8V , V O L T A G E (V O L T S )0.45.0T J = 25°CV BE(sat) @ I C /I B = 10V BE @ V CE = 3.0 VV CE(sat) @ I C /I B = 10MJE2955T0.1I C , COLLECTOR CURRENT (AMP)0.5 1.0100.20.3 2.0 3.01.401.21.00.8V , V O L T A G E (V O L T S )0.4 5.0T J = 25°CV BE(sat) @ I C /I B = 10V BE @ V CE = 2.0 VV CE(sat) @ I C /I B = 10MJE3055T0.60.2MJE2955T MJE3055T3Motorola Bipolar Power Transistor Device DataPACKAGE DIMENSIONSCASE 221A–06TO–220AB ISSUE YNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.STYLE 1:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.5700.62014.4815.75B 0.3800.4059.6610.28C 0.1600.190 4.07 4.82D 0.0250.0350.640.88F 0.1420.147 3.61 3.73G 0.0950.105 2.42 2.66H 0.1100.155 2.80 3.93J 0.0180.0250.460.64K 0.5000.56212.7014.27L 0.0450.060 1.15 1.52N 0.1900.210 4.83 5.33Q 0.1000.120 2.54 3.04R 0.0800.110 2.04 2.79S 0.0450.055 1.15 1.39T 0.2350.255 5.97 6.47U 0.0000.0500.00 1.27V 0.045––– 1.15–––Z–––0.080––– 2.04BQH ZL V GNAKF1234DSEATING PLANE–T–C STUR JMJE2955T MJE3055T4Motorola Bipolar Power Transistor Device DataHow to reach us:USA /EUROPE : Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki,P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–24476F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315MFAX :****************–TOUCHTONE(602)244–6609HONG KONG : Motorola Semiconductors H.K. Ltd.; 8B T ai Ping Industrial Park, INTERNET : http://Design–NET .com51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298◊。